JPH08133719A - High purity synthetic cristobalite powder, its production and silica glass - Google Patents

High purity synthetic cristobalite powder, its production and silica glass

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Publication number
JPH08133719A
JPH08133719A JP29032694A JP29032694A JPH08133719A JP H08133719 A JPH08133719 A JP H08133719A JP 29032694 A JP29032694 A JP 29032694A JP 29032694 A JP29032694 A JP 29032694A JP H08133719 A JPH08133719 A JP H08133719A
Authority
JP
Japan
Prior art keywords
silica glass
powder
synthetic
concentration
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29032694A
Other languages
Japanese (ja)
Other versions
JP3121733B2 (en
Inventor
Shigeru Yamagata
茂 山形
Hideki Tsuriga
英樹 釣賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP29032694A priority Critical patent/JP3121733B2/en
Publication of JPH08133719A publication Critical patent/JPH08133719A/en
Application granted granted Critical
Publication of JP3121733B2 publication Critical patent/JP3121733B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C1/00Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

PURPOSE: To obtain high purity synthetic cristobalite powder having low alkali metal and alkaline earth metal contents, having high viscosity at high temp. and excellent in heat resistance by treating high purity synthetic silica glass powder together with high purity water in an autoclave. CONSTITUTION: High purity synthetic silica glass powder and water of >=99.999wt.% purity are charged into an autoclave and treated in the temp. range of 300-1,000 deg.C and the pressure range of 100-2,000kgf/cm<2> to obtain the objective cristobalite powder. This cristobalite powder is synthetic one obtd. by treating high purity synthetic silica glass powder at high temp. and pressure in an atmosphere of steam and contg. Li, Na and K as alkali metals and Ca and Mg as alkaline earth metals at <=100wt.ppb concn. each and Ti, Cr, Fe, Ni and Cu as transition metals at <=50wt.ppb concn. each. This cristobalite powder is used as the material of a jig for heat treatment of a semiconductor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高純度合成クリストバ
ライト粉、特に高温度下での粘度の高いシリカガラス及
び合成水晶育成原料である高純度合成クリストバライ
ト、その製造方法、及びシリカガラスに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to high-purity synthetic cristobalite powder, particularly high-viscosity silica glass and high-purity synthetic cristobalite, which is a raw material for growing synthetic quartz, a method for producing the same, and silica glass.

【0002】[0002]

【従来の技術】従来、シリカガラスは高純度で熱膨張率
が小さく、高温粘度が大きいところから、シリコンウエ
ハ−ボ−ト、電気炉内ガラスチャンバ−、拡散チャンバ
−等の熱処理用治具材料として用いられてきた。このシ
リカガラスとしては、天然の高純度水晶や石英を粉砕し
た結晶質シリカ粉を電気加熱溶融法または火炎ベルヌイ
法で溶融ガラス化したいわゆる”溶融石英ガラス”が使
用されてきた。ところが、前記溶融石英ガラスの原料と
なる高純度の水晶や石英は次第に枯渇しつつありその入
手が困難となっている。また、純度の低い水晶や石英を
原料として使用すると、溶融石英ガラス中に各種金属不
純物が含有されることになり、それが熱処理時にシリコ
ンウエハ−に拡散移行しシリコンウエハ−を汚染すると
いう問題があった。こうした問題点を解決するため四塩
化けい素等のけい素化合物を原料とした高純度の合成シ
リカガラスが熱処理治具用材料として検討されたが、合
成シリカガラスは高温における粘度が低く、特に最近の
大型化し、重量も大きくなったシリコンウエハ−の熱処
理治具として用いたとき熱処理時に大きな熱変形を起こ
し治具用材料として不適当なものであった。この合成シ
リカガラスの欠点を解決するため高温粘度が高い合成ク
リストバライト粉を用いたシリカガラスの製造方法が、
例えば特開昭62ー113729号公報、特開昭63ー
166730号公報、特開平1ー176243号公報等
で提案された。前記公報記載の製造方法はいずれもアル
カリ成分を加えてクリストバライトを合成するためクリ
ストバライト粉中にアルカリ元素不純物が高濃度で含有
され、その除去処理に費用がかかり、製造コストを高い
ものにしていた。
2. Description of the Related Art Conventionally, silica glass has a high purity, a low coefficient of thermal expansion, and a high temperature viscosity, so that a jig material for heat treatment such as a silicon wafer boat, a glass chamber in an electric furnace, and a diffusion chamber is used. Has been used as. As this silica glass, so-called "fused quartz glass" has been used in which crystalline silica powder obtained by crushing natural high-purity crystal or quartz is fused and vitrified by an electric heating melting method or a flame Bernoulli method. However, high-purity quartz and quartz, which are raw materials for the fused silica glass, are gradually depleted, and it is difficult to obtain them. Further, when quartz or quartz having low purity is used as a raw material, various kinds of metal impurities are contained in the fused silica glass, which is diffused and transferred to the silicon wafer during heat treatment and contaminates the silicon wafer. there were. In order to solve these problems, high-purity synthetic silica glass using silicon compounds such as silicon tetrachloride as a raw material has been studied as a material for heat treatment jigs. When it was used as a heat treatment jig for a silicon wafer having a large size and a large weight, it was not suitable as a jig material because it caused large thermal deformation during heat treatment. To solve the drawbacks of this synthetic silica glass, a method for producing silica glass using high-temperature-viscosity synthetic cristobalite powder,
For example, it has been proposed in JP-A-62-113729, JP-A-63-166730 and JP-A-1-176243. In all of the production methods described in the above publications, an alkali component is added to synthesize cristobalite, so that the cristobalite powder contains a high concentration of an alkali element impurity, and its removal treatment is expensive and the production cost is high.

【0003】[0003]

【発明が解決しようとする課題】こうした現状に鑑み、
本発明者等は、鋭意研究を重ねた結果、高純度の合成シ
リカガラス粉を水の存在下で高温高圧で処理すると、ア
ルカリ金属元素、アルカリ土類金属元素、及び遷移金属
元素含有量の低い高純度のクリストバライトが得られ、
これを原料とするシリカガラスは高純度で、しかも高温
粘度が高いシリカガラスであることを見出し、本発明を
完成したものである。すなわち
In view of the current situation,
As a result of intensive studies, the present inventors have found that when high-purity synthetic silica glass powder is treated at high temperature and high pressure in the presence of water, the content of alkali metal elements, alkaline earth metal elements, and transition metal elements is low. High-purity cristobalite is obtained,
The inventors have found that the silica glass using this as a raw material is a silica glass with high purity and high temperature viscosity, and completed the present invention. Ie

【0004】本発明は、アルカリ元素含有量の少ない高
純度合成クリストバライト粉を提供することを目的とす
る。
An object of the present invention is to provide a high-purity synthetic cristobalite powder having a low alkali element content.

【0005】本発明は、耐熱性の高いシリカガラス及び
合成水晶原料として有用な高純度合成クリストバライト
粉を提供することを目的とする。
An object of the present invention is to provide silica glass having high heat resistance and high-purity synthetic cristobalite powder useful as a raw material for synthetic quartz.

【0006】本発明は、上記合成クリストバライト粉を
原料とする高純度で、高温粘度が高いシリカガラスを提
供することを目的とする。
[0006] It is an object of the present invention to provide a silica glass having a high purity and a high temperature viscosity, which is produced from the above synthetic cristobalite powder as a raw material.

【0007】さらに、本発明は、上記高純度合成クリス
トバライト粉の新規な製造方法を提供することを目的と
する。
Another object of the present invention is to provide a novel method for producing the above-mentioned high-purity synthetic cristobalite powder.

【0008】[0008]

【課題を解決するための手段】上記目的を達成する本発
明は、高純度合成シリカガラス粉を水蒸気雰囲気で高温
高圧処理して得られたリチウム、ナトリウム、カリウム
のアルカリ金属元素濃度及びカルシウム、マグネシウム
のアルカリ土類金属元素濃度が各々100wtppb以
下、並びにチタン、クロム、鉄、ニッケル、銅の遷移金
属元素濃度が各々50wtppb以下である合成クリス
トバライト粉、その製造方法、及びシリカガラスに係
る。
Means for Solving the Problems The present invention, which achieves the above objects, provides an alkali metal element concentration of lithium, sodium and potassium and calcium and magnesium obtained by subjecting high-purity synthetic silica glass powder to high-temperature and high-pressure treatment in a steam atmosphere. The present invention relates to a synthetic cristobalite powder having an alkaline earth metal element concentration of 100 wtppb or less, and a transition metal element concentration of titanium, chromium, iron, nickel, and copper of 50 wtppb or less, a method for producing the same, and silica glass.

【0009】本発明で使用する高純度合成シリカガラス
粉とは、四塩化けい素等の揮発性けい素化合物を酸水素
火炎加水分解法、プロパン火炎加水分解法、プラズマ法
等で合成した合成シリカガラス粉、或は金属アルコキシ
ド又は無機けい酸塩を原料としゾルゲル法で製造した合
成シリカガラス粉であって、粒径が1〜1,000μm
の範囲の粉体をいう。前記合成シリカガラス粉のうちゾ
ルゲル法で製造された合成シリカガラス粉はコストが低
く安価に製造できるので好適である。また、前記合成シ
リカガラス粉中に含有される、リチウム、ナトリウム、
カリウムのアルカリ金属元素濃度、カルシウム、マグネ
シウムのアルカリ土類金属元素濃度は各々100wtp
pb以下、チタン、クロム、鉄、ニッケル、銅の遷移金
属元素濃度は各々50wtppb以下、好ましくはアル
カリ金属元素濃度、アルカリ土類金属元素濃度は各々1
0wtppb以下、遷移金属元素濃度は5wtppb以
下であることが重要である。各元素濃度が前記範囲を超
えると、熱処理中にシリコンウエハーが汚染され、高品
位のシリコンウエハーを得ることができない。また、合
成シリカガラス粉の粒径が前記範囲を逸脱すると、ガラ
ス化時に気泡が発生し易くなり、ガラス中に取り込ま
れ、シリカガラスの品質を悪いものにする。
The high-purity synthetic silica glass powder used in the present invention is a synthetic silica obtained by synthesizing a volatile silicon compound such as silicon tetrachloride by an oxyhydrogen flame hydrolysis method, a propane flame hydrolysis method, a plasma method or the like. A glass powder, or a synthetic silica glass powder produced by a sol-gel method using a metal alkoxide or an inorganic silicate as a raw material, and having a particle size of 1 to 1,000 μm.
The powder in the range of. Among the synthetic silica glass powders, the synthetic silica glass powder manufactured by the sol-gel method is preferable because it is low in cost and can be manufactured at low cost. Further, contained in the synthetic silica glass powder, lithium, sodium,
The concentration of alkali metal element of potassium and the concentration of alkaline earth metal element of calcium and magnesium are each 100 wtp.
The transition metal element concentration of pb or less, titanium, chromium, iron, nickel, copper is 50 wtppb or less, preferably the alkali metal element concentration or the alkaline earth metal element concentration is 1 each.
It is important that the concentration of the transition metal element be 0 wtppb or less and the concentration of the transition metal element be 5 wtppb or less. If the concentration of each element exceeds the above range, the silicon wafer is contaminated during the heat treatment, and a high-quality silicon wafer cannot be obtained. Further, if the particle size of the synthetic silica glass powder deviates from the above range, bubbles are likely to be generated during vitrification and are taken into the glass, which deteriorates the quality of the silica glass.

【0010】上記高純度合成シリカガラス粉を高純度の
水、特に純度99.999wt%以上の水とともに高
温、高圧容器に入れ、温度範囲300〜1,000℃、
好ましくは、500〜800℃、圧力範囲100〜2,
000Kgf/cm2、好ましくは500〜1,000
Kgf/cm2で1〜14日間処理することで、本発明
の高純度クリストバライトが合成される。前記製造方法
では前述のとおり製造時にアルカリを使用しないところ
から、合成されたクリストバライトには原料の不純物濃
度が増加せずに高純度が維持される。前記製造方法にお
いて、処理温度が300℃未満ではクリストバライトへ
の転移が起こらず、また1,000℃を超えると周囲か
らの不純物による汚染が多くなる。更に、圧力が100
Kgf/cm2未満ではクリストバライトへ転移せず、
2,000Kgf/cm2を超える高圧は装置が大型化
し工業的にコスト高になる。実用的に好ましい範囲は、
温度500〜800℃、圧力500〜1,000Kgf
/cm2である。
The above high-purity synthetic silica glass powder was placed in a high-pressure, high-pressure container together with high-purity water, particularly water having a purity of 99.999 wt% or more, and the temperature range was 300 to 1,000 ° C.
Preferably, the temperature is 500 to 800 ° C., and the pressure range is 100 to 2,
000 Kgf / cm 2 , preferably 500 to 1,000
The high purity cristobalite of the present invention is synthesized by treating with Kgf / cm 2 for 1 to 14 days. In the above-mentioned manufacturing method, since alkali is not used during manufacturing as described above, the synthesized cristobalite maintains high purity without increasing the impurity concentration of the raw material. In the above-mentioned manufacturing method, when the treatment temperature is lower than 300 ° C., the transition to cristobalite does not occur, and when it exceeds 1,000 ° C., contamination by impurities from the surroundings increases. In addition, the pressure is 100
If it is less than Kgf / cm 2, it does not transfer to cristobalite,
A high pressure exceeding 2,000 Kgf / cm 2 will increase the size of the apparatus and increase the cost industrially. The practically preferable range is
Temperature 500-800 ° C, Pressure 500-1,000Kgf
/ Cm 2 .

【0011】本発明のシリカガラスは、上記に得られた
合成クリストバライト粉を原料とし、電気溶融法等でガ
ラス化して製造される。得られたシリカガラスは、例え
ば1,200℃で1012.8ポアズ以上、1,100℃で
1014.8ポアズ以上と天然水晶の電気溶融法で得られた
溶融石英ガラスの粘度と同等又はそれ以上の高温粘度を
示す。その理由としては、合成クリストバライト粉を溶
融したシリカガラスは、微細な結晶構造が残っており、
それが高温での粘度を高いものにしているものと推定さ
れる。しかしながら、前記結晶構造はX線回析法でも検
知されないので、数nm以内のものと考えられる。
The silica glass of the present invention is manufactured by vitrifying the synthetic cristobalite powder obtained above as a raw material by an electric melting method or the like. The obtained silica glass has a high temperature equal to or higher than the viscosity of fused silica glass obtained by the electric melting method of natural quartz, for example, 10 12.8 poise or more at 1,200 ° C. and 10 14.8 poise or more at 1,100 ° C. Indicates viscosity. The reason is that silica glass obtained by melting synthetic cristobalite powder has a fine crystal structure remaining,
It is presumed that this makes the viscosity high at high temperature. However, since the crystal structure is not detected by the X-ray diffraction method, it is considered to be within several nm.

【0012】本発明の合成クリストバライト粉は、シリ
カガラス製造用の原料にととまらず、人工水晶の単結晶
を合成するのにも有用であり、強度、透明性、形態の異
方性、熱伝導性等が他の天然石英を原料とする水熱合成
法で得られた人工水晶と遜色がなく、また補強材フィラ
ー、スペーサーとしても有用である。
The synthetic cristobalite powder of the present invention is useful not only as a raw material for producing silica glass but also for synthesizing a single crystal of artificial quartz, and has strength, transparency, morphological anisotropy, and thermal conductivity. In terms of properties, it is comparable to artificial quartz obtained by hydrothermal synthesis using other natural quartz as a raw material, and is also useful as a reinforcing material filler or spacer.

【0013】[0013]

【実施例】【Example】

実施例1〜6 (原料シリカガラス粉の製造) (a)テトラエトキシシラン(Si(OC254)1
モルの原料に対して、0.01規定のアンモニア水を3
モル、メタノールを4モルの比率で混合攪拌してゾル液
を造り、該ゾル液をプラスチックビーカーに注入し恒温
槽にて60℃に10時間放置した。得られたゲルを電気
炉中で200℃に加熱し、乾燥し、さらに1,000℃
で加熱したのち、合成シリカガラス製のボールミルで粉
砕し、それをフルイで分級して、20〜200μmの粉
末を得た。
Examples 1-6 (Production of raw material silica glass powder) (a) tetraethoxysilane (Si (OC 2 H 5) 4) 1
0.01 mol of ammonia water is added to 3 mol of raw material.
Mol and methanol were mixed and stirred at a ratio of 4 mol to prepare a sol solution, which was poured into a plastic beaker and left at 60 ° C. for 10 hours in a constant temperature bath. The obtained gel is heated to 200 ° C in an electric furnace, dried, and further heated to 1,000 ° C.
After being heated in, the powder was pulverized with a ball mill made of synthetic silica glass and classified with a sieve to obtain a powder of 20 to 200 μm.

【0014】(b)蒸留精製した四塩化けい素を収容し
た蒸発器内にキャリアーガスとしてアルゴンガスを吹き
込みアルゴンガス20Nl/h中に100g/hの四塩
化けい素を含む原料ガスを作り、これを酸水素火炎中で
加水分解させ、シリカ粒状体を堆積させた。次いでフル
イで分級し、5〜50μmの合成シリカガラス微粉末を
得た。
(B) Argon gas was blown as a carrier gas into an evaporator containing distilled and purified silicon tetrachloride to prepare a raw material gas containing 100 g / h of silicon tetrachloride in 20 Nl / h of argon gas. Was hydrolyzed in an oxyhydrogen flame to deposit silica granules. Then, classification with a sieve was performed to obtain a synthetic silica glass fine powder having a particle size of 5 to 50 μm.

【0015】(クリストバライトの合成)上記各合成シ
リカガラス粉100gを、それぞれ内表面が金箔でライ
ニング処理された高温高圧容器内に投入し、次いで純度
99.999wt%以上の水を5cc投入したのち、容
器の蓋を閉め、表1に示す各温度、圧力、及び処理時間
で処理した。得られた粉体について粉末X線回析法によ
る鉱物の同定(同定のためのデータは、JCPDS、J
oint Committee On PowerDi
ffraction Standards、に従った)
を行うとともに、実施例1、4で得られた粉体について
その不純物濃度を測定し、その結果を、表1、2に示
す。
(Synthesis of Cristobalite) 100 g of each of the above synthetic silica glass powders was placed in a high temperature and high pressure container whose inner surface was lined with gold foil, and then 5 cc of water having a purity of 99.999 wt% or more was introduced. The lid of the container was closed, and the treatment was performed at each temperature, pressure, and treatment time shown in Table 1. Identification of minerals in the obtained powder by powder X-ray diffraction method (data for identification is JCPDS, J
oint Committee On PowerDi
ffraction Standards)
And the impurity concentrations of the powders obtained in Examples 1 and 4 were measured, and the results are shown in Tables 1 and 2.

【0016】(石英ガラスの製造)上記製造された粉体
を真空雰囲気の電気炉内で1750℃で1時間溶融ガラ
ス化してシリカガラスを製造した。得られたシリカガラ
スについて、ビームゲンディング法による1,200℃
における粘度(小林 啓二、横田 良助、窯業協会誌、
Vol.76,No.7、1968、pp.218〜2
23に従う)、及び不純物元素分析(原子吸光光度法に
よる)を行い、その結果を表1、2に示す。
(Production of Quartz Glass) The above-prepared powder was fused and vitrified at 1750 ° C. for 1 hour in an electric furnace in a vacuum atmosphere to produce silica glass. About the obtained silica glass, 1,200 ° C. by the beam-guding method
Viscosity (Keiji Kobayashi, Ryosuke Yokota, Journal of Ceramic Industry Association,
Vol. 76, No. 7, 1968, pp. 218-2
23) and impurity element analysis (by atomic absorption spectrophotometry), and the results are shown in Tables 1 and 2.

【0017】比較例1 実施例1の原料(a)を用い、水の存在しない窒素ガス
を充填したドライ雰囲気中で、500℃、500Kgf
/cm2で7日間処理した。得られた粉体及びシリカガ
ラスについて実施例1と同様な評価を行った。その結果
を表1に示す。
Comparative Example 1 Using the raw material (a) of Example 1, in a dry atmosphere filled with nitrogen gas in the absence of water, 500 ° C., 500 Kgf
/ Cm 2 for 7 days. The same evaluation as in Example 1 was performed on the obtained powder and silica glass. Table 1 shows the results.

【0018】比較例2 比較例1において高温高圧容器内に水を存在させ200
℃、500Kgf/cm2で7日間処理を行い、得られ
た粉体及びシリカガラスの評価を行い、その結果を表1
に示す。
Comparative Example 2 In Comparative Example 1, water was allowed to exist in the high temperature and high pressure container.
The obtained powder and silica glass were evaluated by treating them at 500 ° C. and 500 Kgf / cm 2 for 7 days, and the results are shown in Table 1.
Shown in

【0019】比較例3 実施例1の原料(a)をNaOH溶液で処理し、原料に
均一にNaが存在するようにしたのち、1,500℃、
1Kgf/cm2で3日間処理を行った。得られた粉体
及びシリカガラスについて実施例1と同様な評価を行
い、その結果を表1、2に示す。
Comparative Example 3 The raw material (a) of Example 1 was treated with a NaOH solution so that Na was uniformly present in the raw material, and then at 1,500 ° C.
The treatment was carried out at 1 Kgf / cm 2 for 3 days. The obtained powder and silica glass were evaluated in the same manner as in Example 1, and the results are shown in Tables 1 and 2.

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】(単位wtppb) [Table 2] (Unit: wtppb)

【0022】上記表1、2にみるように本発明の製造方
法で得られた合成クリストバライト粉は高純度で、特に
アルカリ元素不純物濃度が低い。この合成クリストバラ
イト粉を原料としたシリカガラスは、高温粘度が天然水
晶を溶融ガラス化した溶融石英ガラスと同等又はそれ以
上に高い。一方、本発明の製造条件を満たさない比較例
1、2のシリカガラスは合成シリカガラスの高温粘度を
示すにとどまる。
As shown in Tables 1 and 2 above, the synthetic cristobalite powder obtained by the production method of the present invention has a high purity, and particularly has a low alkali element impurity concentration. The silica glass using this synthetic cristobalite powder as a raw material has a high temperature viscosity equal to or higher than that of fused silica glass obtained by melting and vitrifying natural quartz. On the other hand, the silica glasses of Comparative Examples 1 and 2 which do not satisfy the production conditions of the present invention show only the high temperature viscosity of the synthetic silica glass.

【0023】また、本発明の合成クリストバライト中の
アルカリ元素濃度、及び遷移金属元素濃度は表2にみる
ように従来法で得られた比較例3のシリカガラスに比べ
遥かに低い高純度のものであった。
Further, as shown in Table 2, the synthetic cristobalite of the present invention has a much higher purity than the silica glass of Comparative Example 3 obtained by the conventional method. there were.

【0024】[0024]

【発明の効果】本発明のクリストバライト粉は半導体工
業でシリコンウェハーの特性に悪影響を及ぼすアルカリ
金属元素及びアルカリ土類金属元素が少なく、それを原
料としたシリカガラスは高純度で、不純物元素濃度、特
にアルカリ元素濃度が低く、しかも耐熱性が高いところ
から半導体熱処理用治具材料として有用である。
The cristobalite powder of the present invention contains few alkali metal elements and alkaline earth metal elements that adversely affect the characteristics of silicon wafers in the semiconductor industry, and silica glass made from it has a high purity and a high impurity element concentration, In particular, it is useful as a jig material for semiconductor heat treatment because of its low alkali element concentration and high heat resistance.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】高純度合成シリカガラス粉を水蒸気雰囲気
で高温高圧処理した、リチウム、ナトリウム、カリウム
のアルカリ金属元素濃度及びカルシウム、マグネシウム
のアルカリ土類金属元素濃度が各々100wtppb以
下、並びにチタン、クロム、鉄、ニッケル、銅の遷移金
属元素濃度が各々50wtppb以下であることを特徴
とする合成クリストバライト粉。
1. High-purity synthetic silica glass powder subjected to high-temperature and high-pressure treatment in a steam atmosphere, the concentration of alkali metal elements of lithium, sodium and potassium and the concentration of alkaline earth metal elements of calcium and magnesium are each 100 wtppb or less, and titanium and chromium. , A synthetic cristobalite powder having a transition metal element concentration of 50 wtppb or less for each of iron, nickel, and copper.
【請求項2】アルカリ金属元素の各濃度、及びアルカリ
土類金属元素の各濃度が10wtppb以下、遷移金属
元素の各濃度が5wtppb以下であることを特徴とす
る請求項1記載の合成クリストバライト粉。
2. The synthetic cristobalite powder according to claim 1, wherein each concentration of the alkali metal element and each concentration of the alkaline earth metal element are 10 wtppb or less and each concentration of the transition metal element is 5 wtppb or less.
【請求項3】高純度合成シリカガラス粉と、純度99.
999wt%以上の水を高温高圧容器内に入れ、温度範
囲300〜1,000℃、圧力範囲100〜2,000
Kgf/cm2で処理することを特徴とする合成クリス
トバライト粉の製造方法。
3. High-purity synthetic silica glass powder and a purity of 99.
Water of 999 wt% or more is put in a high temperature and high pressure container, and the temperature range is 300 to 1,000 ° C. and the pressure range is 100 to 2,000.
A method for producing a synthetic cristobalite powder, which comprises treating with Kgf / cm 2 .
【請求項4】温度範囲が500〜800℃、圧力範囲が
500〜1,000Kgf/cm2であることを特徴と
する請求項3記載の合成クリストバライト粉の製造方
法。
4. The method for producing a synthetic cristobalite powder according to claim 3, wherein the temperature range is 500 to 800 ° C. and the pressure range is 500 to 1,000 Kgf / cm 2 .
【請求項5】高純度合成シリカガラス粉が火炎加水分解
法、又はゾルゲル法で製造された粒径1〜1,000μ
mの粉体であることを特徴とする請求項3又は4記載の
合成クリストバライト粉の製造方法。
5. A high-purity synthetic silica glass powder produced by a flame hydrolysis method or a sol-gel method, having a particle size of 1 to 1,000 μm.
The method for producing a synthetic cristobalite powder according to claim 3 or 4, wherein the powder is m.
【請求項6】請求項1記載の合成クリストバライト粉を
溶融ガラス化することを特徴とするシリカガラス。
6. A silica glass characterized by melting and vitrifying the synthetic cristobalite powder according to claim 1.
JP29032694A 1994-11-01 1994-11-01 High purity synthetic cristobalite powder, method for producing the same, and silica glass Expired - Fee Related JP3121733B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29032694A JP3121733B2 (en) 1994-11-01 1994-11-01 High purity synthetic cristobalite powder, method for producing the same, and silica glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29032694A JP3121733B2 (en) 1994-11-01 1994-11-01 High purity synthetic cristobalite powder, method for producing the same, and silica glass

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JPH08133719A true JPH08133719A (en) 1996-05-28
JP3121733B2 JP3121733B2 (en) 2001-01-09

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209132A (en) * 1998-01-23 1999-08-03 Tosoh Corp Production of high purity transparent silica glass
KR100458414B1 (en) * 2000-12-22 2004-11-26 신에쯔 세끼에이 가부시키가이샤 Quartz glass and quartz glass jig, and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209132A (en) * 1998-01-23 1999-08-03 Tosoh Corp Production of high purity transparent silica glass
KR100458414B1 (en) * 2000-12-22 2004-11-26 신에쯔 세끼에이 가부시키가이샤 Quartz glass and quartz glass jig, and method for producing the same

Also Published As

Publication number Publication date
JP3121733B2 (en) 2001-01-09

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