JPH08125021A - Method of hardening multilayer sog film - Google Patents
Method of hardening multilayer sog filmInfo
- Publication number
- JPH08125021A JPH08125021A JP26570694A JP26570694A JPH08125021A JP H08125021 A JPH08125021 A JP H08125021A JP 26570694 A JP26570694 A JP 26570694A JP 26570694 A JP26570694 A JP 26570694A JP H08125021 A JPH08125021 A JP H08125021A
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- JP
- Japan
- Prior art keywords
- film
- heat treatment
- sog
- sog film
- hardening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造工程
で用いられるＳＯＧ（Ｓｐｉｎ Ｏｎ Ｇｌａｓｓ）膜
形成するためのＳＯＧ膜の硬化方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of curing an SOG film for forming an SOG (Spin On Glass) film used in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】半導体装置の製造においては、ウエハ表
面の平坦化あるいは層間絶縁等に、ＳＯＧ膜が用いられ
る。2. Description of the Related Art In manufacturing a semiconductor device, an SOG film is used for flattening the surface of a wafer or for interlayer insulation.
【０００３】このＳＯＧ膜の一般的な形成方法は、ま
ず、シラノールを酢酸メチルなどの有機溶媒に溶かして
おき、この溶液をウエハ表面に回転塗布する。その後、
塗布膜を、約８０〜２２０℃でベーキングして半硬化さ
せ、次いで４００℃以上で再加熱して硬化させる。ま
た、ＳＯＧ膜の硬化工程の時間を短縮し、比較的低温で
行うものとして、塗布膜に、オゾン存在下で波長が４０
０ｎｍ以下の紫外線を照射して硬化する技術が開発され
ている（特開平１−２４８５２８号公報）。In a general method of forming this SOG film, first, silanol is dissolved in an organic solvent such as methyl acetate, and this solution is spin-coated on the wafer surface. afterwards,
The coating film is baked at about 80 to 220 ° C. to be semi-cured, and then reheated at 400 ° C. or higher to be cured. In addition, in order to shorten the time for curing the SOG film and to perform it at a relatively low temperature, the coating film has a wavelength of 40% in the presence of ozone.
A technique of irradiating ultraviolet rays having a wavelength of 0 nm or less to cure has been developed (JP-A-1-248528).
【０００４】[0004]
【発明が解決しようとする課題】しかし、上述した従来
の硬化方法では、パターンの微細化に伴って発生した配
線パターン間の微小な隙間部分（例えば、スペース０．
６μｍ以下）に形成されたＳＯＧ膜の硬化が充分に行わ
れないという問題がある。このように硬化が不十分なＳ
ＯＧ膜は、例えば、その後のフッ酸を含む洗浄液での洗
浄工程で取り除かれてしまい、平坦化が充分に行われな
い部分が形成されるので、ＳＯＧ膜上の上層配線が断線
する等の不良が発生する。そして、これは半導体装置の
歩留まりおよび信頼性を低下させ、大きな問題となる。
また、オゾン存在下紫外線を照射しながら硬化する方法
では従来より比較的低温の３００〜４００℃程度で硬化
できるものの、ＳＯＧ膜を完全に硬化しようとすると変
質してしまうという問題がある。However, in the above-described conventional curing method, a minute gap portion (for example, space 0.
There is a problem that the SOG film formed to a thickness of 6 μm or less) is not sufficiently cured. In this way, curing is insufficient
The OG film is removed, for example, in the subsequent cleaning process using a cleaning solution containing hydrofluoric acid, and a portion where planarization is not sufficiently performed is formed. Therefore, the upper layer wiring on the SOG film is broken. Occurs. Then, this lowers the yield and reliability of the semiconductor device and becomes a serious problem.
Further, although a method of curing while irradiating ultraviolet rays in the presence of ozone can cure at a relatively low temperature of about 300 to 400 ° C. as compared with the conventional method, there is a problem that the SOG film is deteriorated when completely cured.
【０００５】また、ＳＯＧが多層に形成される場合、配
線が密な場所や段差が大きな場所ではＳＯＧ膜が厚く形
成されるため、残存水分や溶媒が多く含まれ、かつ吸湿
も進みやすい。この場合、ＳＯＧ膜形成以降の工程で、
残存有機物の分解および吸湿による膜質劣化が発生し、
上層、下層およびＳＯＧ膜自身の膜応力によりクラック
が発生する。よって、配線間絶縁不良、クラックからの
脱ガスによるメタル配線腐食が発生するという問題があ
る。Further, when the SOG is formed in multiple layers, the SOG film is formed thick in a place where wiring is dense or where there is a large step, so that it contains a large amount of residual water and solvent, and easily absorbs moisture. In this case, in the steps after the SOG film formation,
Decomposition of residual organic matter and film deterioration due to moisture absorption occur,
Cracks occur due to the film stress of the upper layer, the lower layer and the SOG film itself. Therefore, there are problems that insulation between wirings is defective and metal wiring is corroded due to degassing from cracks.
【０００６】本発明の目的は、このような事情に鑑み、
密にパターニングされた配線を被覆するように多層に形
成されるＳＯＧ膜を十分にかつ効果的に硬化することが
できる多層ＳＯＧ膜の硬化方法を提供することにある。In view of such circumstances, an object of the present invention is to
It is an object of the present invention to provide a curing method for a multilayer SOG film, which can sufficiently and effectively cure an SOG film formed in multiple layers so as to cover densely patterned wiring.
【０００７】[0007]
【課題を解決するための手段】かかる目的を達成する本
発明の第１の態様は、配線層、絶縁層およびＳＯＧ膜を
複数積層した半導体装置における多層ＳＯＧ膜の硬化方
法において、塗布したＳＯＧ膜を予備熱処理して半硬化
する工程と、予備熱処理したＳＯＧ膜にオゾン存在下で
紫外線を照射してその上層部を改質する工程と、改質し
たＳＯＧ膜を本熱処理して当該ＳＯＧ膜を硬化する工程
とを含むことを特徴とする多層ＳＯＧ膜の硬化方法にあ
る。A first aspect of the present invention for achieving the above object is a method for curing a multi-layer SOG film in a semiconductor device having a plurality of wiring layers, insulating layers and SOG films stacked, and a coated SOG film. Pre-heat treatment to semi-cure, a step of irradiating the pre-heat-treated SOG film with ultraviolet rays in the presence of ozone to modify the upper layer thereof, and a heat treatment of the modified SOG film to subject the SOG film to the heat treatment. And a step of curing the multilayer SOG film.
【０００８】本発明の第２の態様は、第１の態様におい
て、前記本熱処理が、比較的緩やかな前熱処理と、この
前熱処理より温度の高い後熱処理とからなることを特徴
とする多層ＳＯＧ膜の硬化方法にある。A second aspect of the present invention is the multi-layer SOG according to the first aspect, characterized in that the main heat treatment comprises a comparatively gentle pre-heat treatment and a post-heat treatment having a higher temperature than the pre-heat treatment. There is a method of curing the film.
【０００９】本発明の第３の態様は、第１の態様におい
て、多層配線した配線が金属を含む場合には、前記本熱
処理を比較的穏やかな前熱処理のみとし、多層配線した
配線が金属を含まない場合には、前記本熱処理を比較的
緩やかな前熱処理と、この前熱処理より温度の高い後熱
処理とにより行うことを特徴とする多層ＳＯＧ膜の硬化
方法にある。According to a third aspect of the present invention, in the first aspect, when the multi-layered wiring contains a metal, the main heat treatment is only a relatively gentle pre-heat treatment, and the multi-layered wiring contains a metal. In the case where it is not included, there is a method for curing a multilayer SOG film, characterized in that the main heat treatment is performed by a comparatively gentle pre-heat treatment and a post-heat treatment at a temperature higher than the pre-heat treatment.
【００１０】本発明の第４の態様は、第１〜３の何れか
の態様において、前記オゾン存在下で紫外線を照射する
工程を、７０〜３００℃の温度下で行うことを特徴とす
る多層ＳＯＧ膜の硬化方法にある。In a fourth aspect of the present invention, in any one of the first to third aspects, the step of irradiating the ultraviolet rays in the presence of ozone is performed at a temperature of 70 to 300 ° C. There is a method of curing the SOG film.
【００１１】本発明で予備熱処理とは、ＳＯＧ塗布膜中
に溶媒や水分が一部残存した状態で硬化（半硬化）する
ことをいう。In the present invention, the pre-heat treatment means that the SOG coating film is cured (semi-cured) with a part of the solvent and water remaining.
【００１２】また、本発明でオゾン存在下で紫外線を照
射して上層部を改質する（オゾン／紫外線処理という）
とは、半硬化したＳＯＧ膜の上層部のＯ−Ｈ結合、Ｓｉ
−ＯＨ結合および残留有機物の化学結合を切断除去する
ことにより改質することをいう。このオゾン／紫外線処
理は３００℃以上で行うとＳＯＧ膜が完全に硬化しかつ
変質してしまうのでそれより低い温度、好ましくは７０
〜３００℃、より好ましくは１００〜２５０℃の温度で
行うのがよい。なお、オゾン濃度および紫外線の強度
は、上述した作用が得られる範囲で適宜選択すればよ
い。In the present invention, the upper layer is modified by irradiating it with ultraviolet rays in the presence of ozone (referred to as ozone / ultraviolet treatment).
Is an O—H bond in the upper layer portion of the semi-cured SOG film, Si
-OH bond and chemical modification of residual organic matter by cutting and removing. If this ozone / ultraviolet treatment is carried out at 300 ° C. or higher, the SOG film will be completely cured and deteriorated.
It is good to carry out at a temperature of ˜300 ° C., more preferably 100˜250 ° C. It should be noted that the ozone concentration and the intensity of ultraviolet rays may be appropriately selected within the range in which the above-described action is obtained.
【００１３】また、本発明で本熱処理とは、オゾン／紫
外線処理したＳＯＧ膜を完全に硬化させるための処理で
あり、完全に硬化するような条件であればよい。この本
熱処理は、例えば、大気圧下、窒素あるいは酸素雰囲気
中、４００℃〜１０００℃の範囲で１０〜６０分程度行
えばよい。この本熱処理は、条件が緩やかな前熱処理
と、条件がそれより厳しい後熱処理とに分けて行うのが
好ましい。前熱処理および後熱処理は、別の加熱炉を用
いて別工程としてもよいが、同一の加熱炉で連続的に行
ってもよい。Further, the present heat treatment in the present invention is a treatment for completely curing the SOG film which has been subjected to ozone / ultraviolet ray treatment, under the condition that it is completely cured. This main heat treatment may be performed, for example, under atmospheric pressure in a nitrogen or oxygen atmosphere at a temperature of 400 ° C. to 1000 ° C. for about 10 to 60 minutes. It is preferable to perform this main heat treatment separately in a preheat treatment under mild conditions and a post heat treatment under more severe conditions. The pre-heat treatment and the post-heat treatment may be performed in different steps using different heating furnaces, or may be continuously performed in the same heating furnace.
【００１４】なお、本発明の各工程の適用可能な条件の
例を表１に示す。Table 1 shows an example of conditions applicable to each step of the present invention.
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【作用】本発明では、半硬化したＳＯＧ膜をオゾン／紫
外線処理することにより、ラジカル酸素でＳＯＧ膜上層
部のＯ−Ｈ結合、Ｓｉ−ＯＨ結合等を切断して改質し、
かつこれを本熱処理で硬化することにより、微細な間隙
のＳＯＧ膜も十分に硬化できる。また、本熱処理は、は
じめは緩やかな条件で行うと、さらに十分な硬化が行え
る。In the present invention, the semi-cured SOG film is subjected to ozone / ultraviolet treatment to cut and modify the O—H bond, Si—OH bond and the like in the upper layer of the SOG film by radical oxygen,
Further, by curing this by the heat treatment, the SOG film having a fine gap can be sufficiently cured. Further, if this heat treatment is performed under mild conditions at the beginning, more sufficient curing can be performed.
【００１７】[0017]
【実施例】以下、本発明を実施例に基づいて説明する。EXAMPLES The present invention will be described below based on examples.
【００１８】図１は、本発明の一実施例の工程を説明す
る模式的断面図である。FIG. 1 is a schematic sectional view for explaining the process of one embodiment of the present invention.
【００１９】まず、Ｓｉからなる半導体基板１上に、通
常の技術で、熱酸化膜からなる絶縁膜２を形成し、この
絶縁膜２上に、通常の技術により、リンドープポリシリ
コン（Ｐｏｌｙ Ｓｉ）で形成され、密にパターニング
された配線３を形成し、さらに、通常技術により、配線
３上にリンドープシリコン酸化膜であるＰＳＧ（Ｐｈｏ
ｓｈｏ−Ｓｉｌｉｃａｔｅ Ｇｌａｓｓ）からなる第１
絶縁膜４を形成する（図１(a) ）。ここで配線３のパタ
ーン間隔の密な部分は、０．１μｍ〜０．６μｍ程度で
ある。First, an insulating film 2 made of a thermal oxide film is formed on a semiconductor substrate 1 made of Si by an ordinary technique, and phosphorus-doped polysilicon (Poly Si) is formed on the insulating film 2 by an ordinary technique. ) And densely patterned wiring 3 is formed, and PSG (Pho (Pho) which is a phosphorus-doped silicon oxide film is formed on the wiring 3 by a conventional technique.
1st consisting of sho-Silicate Glass)
The insulating film 4 is formed (FIG. 1 (a)). Here, the portion of the wiring 3 having a close pattern interval is about 0.1 μm to 0.6 μm.
【００２０】次に、ＰＳＧ膜４上に、ＳＯＧ膜を形成す
るＯＣＤ−ＴＹＰＥ２（東京応化工業（株）製）をスピ
ンコートしてＳＯＧ塗布膜５Ａを形成し（図１(b) ）、
直ちに、ＳＯＧ塗布膜５Ａに予備加熱処理を施してＳＯ
Ｇ半硬化膜５Ｂとする（図１(c) ）。ここで、予備加
熱は、大気圧下、８０℃で、４分間実施した。Then, OCD-TYPE 2 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) for forming an SOG film is spin-coated on the PSG film 4 to form an SOG coating film 5A (FIG. 1 (b)).
Immediately, pre-heat treatment is applied to the SOG coating film 5A to remove SO.
The G semi-cured film 5B is used (FIG. 1 (c)). Here, preheating was performed at 80 ° C. for 4 minutes under atmospheric pressure.
【００２１】続いて、半導体基板１の温度をほぼ１００
℃に保持しながら、オゾン存在下で紫外線を照射し、Ｓ
ＯＧ改質膜５Ｃを得た（図１(d) ）。ここで、オゾン濃
度は１０５ｍｇ／ｍ3 とし、紫外線照射は、４００ｎｍ
以下の波長の光を、照射強度１３０Ｗ／ｃｍ2 で、１．
５分間行った。これにより、ＳＯＧ半硬化膜５Ｂは、照
射されたラジカル酸素により、その上層部（表面近傍）
が、Ｏ−Ｈ結合、Ｓｉ−ＯＨ結合および残留有機物の化
学結合が切断除去されることにより改質され、ＳＯＧ改
質膜５Ｃとなる。Then, the temperature of the semiconductor substrate 1 is raised to about 100.
While maintaining the temperature at ℃, irradiate ultraviolet rays in the presence of ozone, S
An OG modified film 5C was obtained (FIG. 1 (d)). Here, the ozone concentration is 105 mg / m 3 , and the ultraviolet irradiation is 400 nm.
The light having the following wavelength was irradiated with an irradiation intensity of 130 W / cm 2 and 1.
It went for 5 minutes. As a result, the SOG semi-cured film 5B is irradiated with the radical oxygen and is exposed to the upper layer (near the surface) thereof.
Is reformed by cutting and removing the O—H bond, the Si—OH bond, and the chemical bond of the residual organic matter, and becomes the SOG modified film 5C.
【００２２】次に、加熱炉中でＳＯＧ改質膜５Ｃに本熱
処理を施し、ＳＯＧ膜５とした（図１(e) ）。本実施例
ではこの本熱処理を、ＳＯＧ改質膜５Ｃの内部を徐々に
硬化させる前熱処理と、その後完全に硬化させる後熱処
理とに分けて行った。ここで、前熱処理は、大気圧下、
４００℃で３０分間、後熱処理は、大気圧下、８００
℃、１０分間の条件で行った。Next, the SOG modified film 5C was subjected to the main heat treatment in the heating furnace to form the SOG film 5 (FIG. 1 (e)). In this embodiment, this main heat treatment is divided into a pre-heat treatment for gradually hardening the inside of the SOG modified film 5C and a post-heat treatment for completely hardening it. Here, the pre-heat treatment is performed under atmospheric pressure,
Post heat treatment at 400 ° C for 30 minutes under atmospheric pressure of 800
It was carried out under the conditions of 10 ° C. and 10 minutes.
【００２３】次に、このＳＯＧ膜５上に通常の形成技術
によりアルミニウムで形成され、密にパターニングされ
た第２配線６を形成し、さらに、通常技術により第２配
線６上にプラズマ酸化膜からなる第２絶縁膜７を形成し
た（図１(f) ）。ここで、第２配線６のパターン間隔の
密な部分は、０．１μｍ〜０．６μｍ程度である。Next, a second wiring 6 which is made of aluminum and is densely patterned is formed on the SOG film 5 by a usual forming technique, and further, a plasma oxide film is formed on the second wiring 6 by a usual technique. The second insulating film 7 is formed (FIG. 1 (f)). Here, a portion of the second wiring 6 having a close pattern interval is about 0.1 μm to 0.6 μm.
【００２４】次に、第２絶縁膜７上に第２ＳＯＧ膜８を
ＳＯＧ膜５と同様な要領で、予備加熱処理、オゾン／紫
外線処理、本熱処理にて形成した（図１(f) ）。なお、
ここでの本熱処理は、後熱処理を省いて前熱処理のみと
し、４２０℃で、３０分とした。Next, a second SOG film 8 was formed on the second insulating film 7 in the same manner as the SOG film 5 by preheating treatment, ozone / ultraviolet treatment and main heat treatment (FIG. 1 (f)). In addition,
In this heat treatment, the post-heat treatment was omitted and only the pre-heat treatment was performed, and the heat treatment was performed at 420 ° C. for 30 minutes.
【００２５】続いて、第２ＳＯＧ膜８上にプラズマ酸化
膜からなる第３絶縁膜９を形成した（図１(f) ）。Subsequently, a third insulating film 9 made of a plasma oxide film was formed on the second SOG film 8 (FIG. 1 (f)).
【００２６】なお、本実施例では、第２配線６が金属を
含むものであるため、第２ＳＯＧ膜８の本熱処理を前処
理のみで行ったが、第２配線６を、例えばポリシリコン
などの金属を含まない層で形成した場合には、第２ＳＯ
Ｇ膜８の本熱処理は前熱処理および後熱処理で行う。In the present embodiment, since the second wiring 6 contains a metal, the main heat treatment of the second SOG film 8 was performed only by the pretreatment, but the second wiring 6 is made of metal such as polysilicon. When formed by a layer not containing the second SO
The main heat treatment of the G film 8 is performed by pre-heat treatment and post-heat treatment.
【００２７】以上のように形成した本実施例の半導体装
置の、密にパターニングされた配線間の断面形状を、Ｓ
ＥＭ（走査電子顕微鏡；Ｓｃａｎｎｉｎｇ Ｅｌｅｃｔ
ｒｏｎ Ｍｉｃｒｏｓｃｏｐｅ）観察およびＦＩＢ（Ｆ
ｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）観察で評価したとこ
ろ、ＳＯＧ膜は十分に硬化されていた。In the semiconductor device of the present embodiment formed as described above, the cross-sectional shape between the closely patterned wirings is S
EM (scanning electron microscope; scanning elect)
ron Microscope observation and FIB (F
The SOG film was sufficiently cured as a result of the evaluation by the observed Ion Beam).
【００２８】また、各工程の条件を種々変化させて同様
に半導体装置を製造して同様に評価したところ、予備加
熱およびオゾン／紫外線処理は、それぞれ２００℃以下
で行い、かつオゾン／紫外線照射を１．５分以上とする
と、０．１μｍ程度の間隔で密にパターニングされた配
線間のＳＯＧ膜も十分に硬化されていることが確認され
た。また、本熱処理は、上述した実施例と同様に前熱処
理および後熱処理によって行った方が顕著な効果が得ら
れることが確認された。Further, when the semiconductor device was manufactured in the same manner by changing the conditions of each process variously and evaluated in the same manner, the preheating and the ozone / ultraviolet ray treatment were respectively performed at 200 ° C. or lower, and the ozone / ultraviolet ray irradiation was performed. It was confirmed that the SOG film between the wirings densely patterned at intervals of about 0.1 μm was sufficiently hardened when the time was 1.5 minutes or more. Further, it was confirmed that the present heat treatment was more effective when performed by the pre-heat treatment and the post-heat treatment as in the above-mentioned examples.
【００２９】表２には、本発明の効果を確認する比較実
験の例を示す。ここで、実施例２および比較例１〜７
は、上述した実施例１と同様に行ったものである。な
お、表２に示すエッチングレイトは、ＳＯＧ膜を十分に
硬化するという本発明の効果を間接的に確かめるもの
で、平坦部に形成したＳＯＧ膜のエッチング性で硬化の
度合いを評価するものである。この結果より、本発明の
範囲で行った実施例２のＳＯＧ膜だけが十分に硬化され
ているのがわかる。Table 2 shows an example of a comparative experiment for confirming the effect of the present invention. Here, Example 2 and Comparative Examples 1 to 7
Is performed in the same manner as in the above-described first embodiment. The etching rate shown in Table 2 indirectly confirms the effect of the present invention that the SOG film is sufficiently cured, and the degree of curing is evaluated by the etching property of the SOG film formed on the flat portion. . From this result, it can be seen that only the SOG film of Example 2 made within the scope of the present invention is sufficiently cured.
【００３０】[0030]
【表２】 [Table 2]
【００３１】[0031]
【発明の効果】以上説明したように、本発明は、ＳＯＧ
膜を予備熱処理した後、オゾン／紫外線処理し、その後
本熱処理するので、微細にパターニングされた配線間の
ＳＯＧ膜も十分にかつ効果的に硬化できるという効果を
奏する。As described above, according to the present invention, the SOG
Since the film is preheated, ozone / ultraviolet ray is processed, and then the main heat treatment is performed, the SOG film between the finely patterned wirings can be sufficiently and effectively cured.
【図１】本発明の一実施例に係るＳＯＧ膜の硬化工程を
示す模式的断面図である。FIG. 1 is a schematic cross-sectional view showing a step of curing an SOG film according to an embodiment of the present invention.
１ 半導体基板 ２ 絶縁膜 ３ 配線 ４ 第１絶縁膜 ５Ａ ＳＯＧ塗布膜 ５Ｂ ＳＯＧ半硬化膜 ５Ｃ ＳＯＧ改質膜 ５ ＳＯＧ膜 ６ 第２配線 ７ 第２絶縁膜 ８ 第２ＳＯＧ膜 ９ 第３絶縁膜 1 Semiconductor Substrate 2 Insulating Film 3 Wiring 4 First Insulating Film 5A SOG Coating Film 5B SOG Semi-Cured Film 5C SOG Modified Film 5 SOG Film 6 Second Wiring 7 Second Insulating Film 8 Second SOG Film 9 Third Insulating Film
Claims (4)
層した半導体装置における多層ＳＯＧ膜の硬化方法にお
いて、塗布したＳＯＧ膜を予備熱処理して半硬化する工
程と、予備熱処理したＳＯＧ膜にオゾン存在下で紫外線
を照射してその上層部を改質する工程と、改質したＳＯ
Ｇ膜を本熱処理して当該ＳＯＧ膜を硬化する工程とを含
むことを特徴とする多層ＳＯＧ膜の硬化方法。1. A method of curing a multi-layer SOG film in a semiconductor device having a plurality of wiring layers, insulating layers and SOG films laminated, wherein a pre-heat treatment of the applied SOG film is performed to semi-cure, and an ozone is applied to the pre-heat treated SOG film. Irradiating ultraviolet rays in the presence to modify the upper layer part, and modified SO
And a step of hardening the G film by a main heat treatment to cure the SOG film.
較的緩やかな前熱処理と、この前熱処理より温度の高い
後熱処理とからなることを特徴とする多層ＳＯＧ膜の硬
化方法。2. The method for hardening a multilayer SOG film according to claim 1, wherein the main heat treatment includes a relatively mild preheat treatment and a postheat treatment having a higher temperature than the preheat treatment.
金属を含む場合には、前記本熱処理を比較的穏やかな前
熱処理のみとし、多層配線した配線が金属を含まない場
合には、前記本熱処理を比較的緩やかな前熱処理と、こ
の前熱処理より温度の高い後熱処理とにより行うことを
特徴とする多層ＳＯＧ膜の硬化方法。3. The method according to claim 1, wherein when the multi-layered wiring contains a metal, the main heat treatment is performed only in a relatively mild pre-heat treatment, and when the multi-layered wiring does not contain a metal, the main heat treatment is performed. A method for hardening a multilayer SOG film, characterized in that the heat treatment is performed by a relatively gentle pre-heat treatment and a post-heat treatment at a temperature higher than the pre-heat treatment.
ゾン存在下で紫外線を照射する工程を、７０〜３００℃
の温度下で行うことを特徴とする多層ＳＯＧ膜の硬化方
法。4. The process according to claim 1, wherein the step of irradiating with ultraviolet light in the presence of ozone is performed at 70 to 300 ° C.
A method for curing a multi-layer SOG film, which is performed at the temperature of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26570694A JP3391575B2 (en) | 1994-10-28 | 1994-10-28 | Method for curing multilayer SOG film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26570694A JP3391575B2 (en) | 1994-10-28 | 1994-10-28 | Method for curing multilayer SOG film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08125021A true JPH08125021A (en) | 1996-05-17 |
| JP3391575B2 JP3391575B2 (en) | 2003-03-31 |
Family
ID=17420885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26570694A Expired - Fee Related JP3391575B2 (en) | 1994-10-28 | 1994-10-28 | Method for curing multilayer SOG film |
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| Country | Link |
|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509277B1 (en) | 1999-03-31 | 2003-01-21 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen |
| US7449383B2 (en) * | 2006-09-14 | 2008-11-11 | Samsung Electronics Co., Ltd. | Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same |
| JP2010232433A (en) * | 2009-03-27 | 2010-10-14 | Toshiba Corp | Method of manufacturing semiconductor device |
| US8080463B2 (en) | 2009-01-23 | 2011-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method and silicon oxide film forming method |
| US8889229B2 (en) | 2008-02-29 | 2014-11-18 | AA Electronics Materials USA Corp. | Method for formation of siliceous film and siliceous film formed by the method |
-
1994
- 1994-10-28 JP JP26570694A patent/JP3391575B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509277B1 (en) | 1999-03-31 | 2003-01-21 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen |
| US6833331B2 (en) | 1999-03-31 | 2004-12-21 | Hitachi Ltd. | Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen |
| US7449383B2 (en) * | 2006-09-14 | 2008-11-11 | Samsung Electronics Co., Ltd. | Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same |
| US8889229B2 (en) | 2008-02-29 | 2014-11-18 | AA Electronics Materials USA Corp. | Method for formation of siliceous film and siliceous film formed by the method |
| US8080463B2 (en) | 2009-01-23 | 2011-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method and silicon oxide film forming method |
| JP2010232433A (en) * | 2009-03-27 | 2010-10-14 | Toshiba Corp | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3391575B2 (en) | 2003-03-31 |
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