JPH08124120A - Production of magneto-resistive head - Google Patents

Abstract

PURPOSE: To prevent overetching of an insulating layer and the occurrence of dielectric breakdown by eliminating the need for an etching stage, such as ion milling, in a method for producing a magneto-resistive head having the insulating layer, a magneto-resistive element formed on the insulating layer and a hard magnetic film for controlling the magnetic domains of the magneto- resistive element. CONSTITUTION: The surface of the insulating layer 3 is coated with a first mask 4 exclusive of the region 5 to be formed with the magneto-resistive element 18. The magneto-resistive element 18 is formed on the insulating layer 3 and the respective constituting layers 7, 8, 9 of the magneto-resistive element 18 are formed on the first mask 4. The first mask 4 is removed together with the respective constituting layers 7, 8, 9. A second mask 12 is formed on the magneto-resistive element 18. At least a hard magnetic film is formed on the insulating layer 3 and at least the hard magnetic film is formed on the second mask 12 as well and thereafter, the second mask 12 is removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive head.

[0002]

2. Description of the Related Art A magnetoresistive head (MR head) is a sensor that utilizes the magnetoresistive effect, that is, the phenomenon that the electrical resistivity of a magnetic material changes when a magnetic field is applied to the magnetic material. FIG. 4 is a perspective view showing a part of a general magnetoresistive head. The magnetoresistive effect element (MR element) 18 includes a film having a magnetoresistive effect such as NiFe. Usually, the magnetoresistive effect element 18 is formed in a substantially rectangular shape so that the easy axis of magnetization coincides with the longitudinal direction thereof. Lead-out conductor layers 19 made of gold or the like are joined to both ends of the magnetoresistive effect element 18.
A constant sense current is passed through the lead conductor layer 19 as indicated by arrow A, and this sense current flows in the signal detection region.
The magnetoresistive effect element 18 and the lead conductor layer 19 are arranged so as to be sandwiched between the pair of magnetic shield layers 2 and 17, and are electrically insulated by the nonmagnetic insulating layers 3 and 16. 1 is a substrate.

Signals are recorded on the magnetic disk in the form of residual magnetization. The signal magnetic field of this information is received by the signal detection region of the magnetoresistive head and detected as a resistance change. However, in this case, in order to secure the linear response to the magnetic information, the sense current flowing through the magnetoresistive effect element 18 and the angle formed by the magnetization of the magnetoresistive effect element 18 have a predetermined value (desirably). Must be set to 45 °). Various methods have been disclosed as such biasing means. Actual Kaisho 60
In the magnetoresistive head disclosed in Japanese Patent No. 159518 and Japanese Unexamined Patent Publication No. 63-237204, a nonmagnetic conductor layer and an amorphous soft magnetic material layer (for example, CoZrMo) are sequentially laminated on a magnetoresistive layer. It is disclosed that by adopting the above structure, a good bias angle can be obtained and an excellent linear response can be obtained.

Regarding the shape of the magnetoresistive effect element, since the magnetoresistive effect element has a finite length with respect to the direction of magnetization of the easy axis of magnetization, magnetic poles (N pole, S pole) are formed at the ends of the magnetoresistive effect element. ) Occurs, a magnetic field in the direction opposite to the magnetization direction, that is, a demagnetizing field is generated inside the magnetoresistive effect layer.
As a result, the magnetoresistive effect layer shows a magnetic domain structure in which several magnetic domains are divided into loops in order to reduce the magnetostatic energy induced by the demagnetizing field, and magnetic domain walls are formed at the boundaries of the magnetic domains. Has occurred. Generally, in a magnetoresistive effect element, due to incomplete film formation, grain boundaries, lattice defects,
There is non-uniformity such as inclusion of impurities. Therefore, in the conventional magnetoresistive head, there is a problem that the domain wall moves while being caught by the signal magnetic field from the magnetic disk, the magnetization rotation becomes discontinuous, and Barkhausen noise occurs in the reproduced waveform.

In order to suppress the Barkhausen noise, it is effective to align the magnetization directions of the magnetoresistive effect element to form a single magnetic domain. As such a method of forming a single magnetic domain, US Pat. No. 3,840,899 discloses a method of forming a single magnetic domain by bonding a hard magnetic film to a magnetoresistive effect element. Further, JP-A-63-40610 discloses a method of utilizing an antiferromagnetic film.

As described above, a method of manufacturing a magnetoresistive head using a hard magnetic film is disclosed in US Pat.
No. 9,035. Representative manufacturing steps using such a manufacturing method will be described with reference to FIG. First, as shown in FIG. 5A, the lower shield layer 2 is formed on the substrate 1. An insulating layer 3 is formed on the lower shield layer 2, and a magnetoresistive effect layer 7, a nonmagnetic conductor layer 8 and a soft magnetic layer 9 are laminated on the insulating layer 3 as shown in FIG. 5B. As shown in FIG. 5C, a mask 20 is formed on the soft magnetic layer 9. This mask 20 is called a stencil, and a flange-shaped projection 20a is formed on the end surface of the mask 20, and a recess 6 is formed below the projection 20a.

Next, using the ion milling method, as shown in FIG.
As shown in (d), the films 7, 8 and 9 are ground into a desired planar shape to form a magnetoresistive effect element 18. At this time, due to the shape of the stencil 20, the end surface of the magnetoresistive effect element 18 is formed with an inclined surface 10 that is narrowed upward.

Next, as shown in FIG. 5E, a hard magnetic film 14 and a conductor film 15 are formed. At this time, the hard magnetic film 14 and the conductor film 15 are formed on the insulating layer 3 and the stencil 2.
It is formed together with 0. At this time, the end face 14 a of the hard magnetic film 14 is joined along the slope 10 of the element by the action of the shape of the stencil 20. Then, as shown in FIG. 6A, the stencil 20 is removed.

[0009]

Next, the hard magnetic film 1 is formed.
4 and the conductor film 15 are required to have a predetermined planar shape, and at this time, it is also necessary to use the photolithography method similarly to the above. That is, as shown in FIG. 6B, the photoresist film 21 is formed according to a predetermined conductor pattern.
To form. Next, the hard magnetic film 14 and the conductor film 15 are shaved by an ion milling method to form the hard magnetic film 14 and the conductor film 15 having a desired shape as shown in FIG. 6C. Next, as shown in FIG. 6D, the photoresist film 21 is removed. After that, an insulating layer and an upper shield layer are formed according to a normal process to form a magnetoresistive head.

However, according to this manufacturing method, as shown in FIG.
As shown in (c) to (e), after forming the stencil 20, it is necessary to remove the films 7, 8 and 9 by an etching method such as ion milling and to form the magnetoresistive effect element 18. In this step, of the insulating layer 3,
Although the portion 3B under the stencil is protected from etching, the portion 3A was sometimes overetched by ion milling or the like.

That is, as shown in an enlarged view in FIG. 7, the portion 3A may be thinned by overetching, and dielectric breakdown may occur at 3A. This will cause defective products. Further, recently, for high density recording, the distance between the lower shield layer 2 and the magnetoresistive effect element 18 has been shortened, so that the film thickness of the insulating layer 3 is decreasing year by year. As a result, the insulating layer is more likely to cause dielectric breakdown due to overetching, and measures need to be taken.

Further, regarding the method of forming the patterns of the hard magnetic film 14 and the conductor film 15, US Pat.
Although not specified in No. 79,035, it is considered that the photoresist method as shown in FIG. 6 is also adopted.
However, also in this case, as shown in FIGS. 6B and 6C, when the hard magnetic film 14 and the conductor film 15 are formed by etching, the portion 3C is again over-etched. Therefore, this part 3c is
It is again etched and thinned, which causes defective products. As a result, the yield has deteriorated.

Further, according to such a manufacturing method, there is a problem that the manufacturing cost is high because the number of manufacturing steps is large.

An object of the present invention is to provide a magnetoresistive effect including an insulating layer, a magnetoresistive effect element provided on the insulating layer, and a hard magnetic film for controlling magnetic domains of the magnetoresistive effect element. A method for manufacturing a mold head is to provide a new manufacturing method that does not require an etching step such as ion milling.

Further, by this, it is possible to prevent overetching and dielectric breakdown of the underlying insulating layer, prevent defective products due to this, and improve the manufacturing yield.

Another object of the present invention is to provide a manufacturing method having fewer manufacturing steps than the conventional method.

[0017]

According to the present invention, an insulating layer, a magnetoresistive effect element having at least a magnetoresistive effect layer provided on the insulating layer, and a magnetic domain of the magnetoresistive effect element are controlled. A method of manufacturing a magnetoresistive head including the hard magnetic film of claim 1, wherein the insulating layer is covered with a first mask except a region where the magnetoresistive element is formed, and the magnetoresistive layer is formed on the insulating layer. Along with forming the effect element, each constituent layer of this magnetoresistive effect element is formed on the first mask, the first mask is removed together with each constituent layer, and a second mask is formed on the magnetoresistive effect element. Then, at least the hard magnetic film is formed on the insulating layer and at least the hard magnetic film is formed on the second mask, and the second mask is removed.

[0018]

The present inventor covers the insulating layer with the first mask except the region where the magnetoresistive effect element is formed, forms the magnetoresistive effect element on the insulating layer, and forms the magnetoresistive effect element on the first mask. Forming each constituent layer of the magnetoresistive effect element, removing the first mask together with each constituent layer, forming a second mask on the magnetoresistive effect element, and forming at least a hard magnetic film on the insulating layer. At the same time, at least a hard magnetic film is formed on the second mask, and the second mask is removed to form a coupling portion between the magnetoresistive effect element and the hard magnetic film for controlling this magnetic domain. succeeded in.

As a result, the magnetoresistive head can be manufactured without using a method such as ion milling. Therefore, the underlying insulating layer is not over-etched, so that the problem of dielectric breakdown of the insulating layer does not occur. Therefore, the manufacturing yield of the magnetoresistive head is improved, and the insulating layer can be easily thinned.

In the present invention, preferably, a projection is provided on the end surface of the first mask on the side where the magnetoresistive effect element is formed, and the projection forms a recess on the insulating layer side of the end surface.
When the magnetoresistive effect element is formed on the insulating layer, the end surface of the magnetoresistive effect element is formed into a slanted surface which is narrowed upward by the protrusion.

More preferably, a protrusion is provided on the end face of the second mask, a recess is formed on the end face of the second mask on the magnetoresistive effect element side, and the protrusion is formed by the protrusion when the hard magnetic film is formed on the insulating layer. A hard magnetic film is formed along the inclined surface of the magnetoresistive effect element. By these methods, a hard magnetic film can be formed on the end surface of the magnetoresistive effect element.

Preferably, a second mask is formed on the magnetoresistive effect element, and at the same time, a third mask is formed on the insulating layer so as to exclude the formation region of the hard magnetic film, and the hard magnetic film is formed on the insulating layer. A hard magnetic film is also formed on the third mask when forming the second mask, and the third mask is simultaneously removed when the second mask is removed. This can further reduce the number of manufacturing steps.

Preferably, a non-magnetic conductor layer is formed on the magneto-resistive layer, and a soft magnetic layer is formed on the non-magnetic conductor layer to form the magneto-resistive element in the magneto-resistive layer.
It is composed of a non-magnetic conductor layer and a soft magnetic layer. This makes it possible to obtain a linear response characteristic with respect to the magnetic recording information.

[0024]

1 and 2 are sectional views showing respective steps of a manufacturing method according to an embodiment of the present invention. As shown in FIG. 1A, a lower shield layer 2 is formed on a substrate 1 made of a magnetic material or a nonmagnetic material. Lower shield layer 2
Is a magnetic film such as NiFe. At the stage of forming the lower shield layer 2, an ion milling method or an electrodeposition plating method can be adopted.

Next, the nonmagnetic insulating layer 3 made of alumina or the like is formed on the lower shield layer 2. Then, FIG.
As shown in (b), the first mask 4 is formed on the insulating layer 3. The first mask 4 is preferably formed by a photolithography method. The first mask 4 covers the insulating layer 3 except the region 5 where the magnetoresistive effect element is formed.

In this embodiment, the first mask 4 is
This is called a stencil, and a flange-shaped projection 4a is formed on the end surface of the mask 4, and a recess 6 is formed below the projection 4a.

Next, as shown in FIG. 1C, the magnetoresistive effect layer 7, the nonmagnetic conductor layer 8 and the soft magnetic layer 9 are sequentially laminated on the insulating layer 3. At this time, since the magnetoresistive effect layer 7, the nonmagnetic conductor layer 8 and the soft magnetic layer 9 are all deposited in the magnetoresistive effect element forming region 5, the magnetoresistive effect element 18 is formed at this stage.

At this time, due to the shape of the stencil 4, an inclined surface 10 is formed on the end surface of the magnetoresistive effect element 18 so as to be narrowed upward. The magnetoresistive layer 7, the nonmagnetic conductor layer 8 and the soft magnetic layer 9 are also formed on the first mask 4.

Then, as shown in FIG. 1D, the photoresist 4 is removed together with the magnetoresistive effect layer 7, the nonmagnetic conductor layer 8 and the soft magnetic layer 9 thereon by a removal technique such as a lift-off method. .

In this step, a protrusion 4a is provided on the end surface of the first mask 4 on the side of the formation region 5, and the protrusion 4a is formed.
When the concave portion 6 is formed on the insulating layer side of the end face by means of and the protrusions 4a are formed on the insulating layer 3 to form the magnetoresistive effect element, the end face of the magnetoresistive effect element 18 is inclined upward. It is set to surface 10. However, the cross-sectional shapes of the protrusion and the recess can be variously changed. For example, the projections and the recesses have a triangular cross-sectional shape, and the end surface of the first mask 4 is formed in the formation region 5 as it goes upward.
It can also be an inclined surface that inclines to the side.

Next, as shown in FIG. 1E, the second mask 12 is formed on the magnetoresistive effect element 18. At the same time, the third mask 11 is formed on the insulating layer 3 so as to exclude the formation region 13 of the hard magnetic film 14.

Next, as shown in FIG. 2A, the hard magnetic film 14 and the conductor film 15 are formed on the insulating layer, and also on the second mask 12 and the third mask 11.
The hard magnetic film 14 and the conductor film 15 are formed. Then
As shown in FIG. 2B, the second mask 12 and the third mask 11 are removed by a removal technique such as a lift-off method.
It is removed together with the hard magnetic film 14 and the conductor film 15 thereon.

According to this manufacturing method, the end face 14a of the hard magnetic film 14 and
The end surface 10 of the magnetoresistive effect element 18 can be joined. At the same time, the hard magnetic film 14 and the conductor film 15 can be formed by the action of the third mask 11.

In particular, as shown in FIG. 1E, a protrusion 12a is provided on the end face of the second mask 12, and the protrusion 1a is formed.
When the recess 26 is formed on the end surface by 2a and the hard magnetic film 14 is formed on the insulating layer 3, the hard magnetic film 14 is formed by the protrusion 12a on the end surface (inclined surface) of the magnetoresistive element 18.
Can be joined to 10. Of course, this protrusion 12a
The cross-sectional shape of the recess 26 can be variously changed. For example, the projections and depressions have a triangular cross-sectional shape,
The end surface of the second mask 12 may be an inclined surface that inclines toward the formation region 13 side as it goes upward.

It is preferable to form the joint portion having such a shape. This is because, as shown in FIG. 3A, when the hard magnetic layer 14A is formed up to the upper surface side of the magnetoresistive element 18, the magnetic field from the hard magnetic film 14A becomes the arrow B.
This is because the magnetic domains cannot be controlled at the 30th portion. This causes noise. In this regard, as shown in FIG. 3B, when the end face of the hard magnetic layer is joined to the end face 10, the magnetic field from the hard magnetic film 14 is directed as shown by the arrow C. The problem as in does not occur.

In the ordinary photolithography technique, the position of the hard magnetic film 14A is often displaced as shown in FIG. 3A due to the problem of accuracy at the mass production level, which may cause defective products. . However, the use of the stencil as described above is very advantageous in manufacturing because the position and shape of the end face of the hard magnetic film 14 are unlikely to shift even if the position of the stencil shifts to some extent.

However, as a result of the inventors actually examining the manufacturing conditions, the following was found. That is, FIG. 3 (c)
As shown in, even when the end portion of the hard magnetic film 14B is formed up to the upper surface of the magnetoresistive effect element 18, the width D of the magnetoresistive effect element 18 is 20 mm or more, and the end of the magnetoresistive effect element 18 is If the distance d from to the end of the hard magnetic film 14B is 2 mm or less, noise did not occur. This is extremely advantageous in manufacturing because defective products do not occur if the accuracy of photolithography is controlled within this range, particularly when mass production is performed.

In particular, as shown in FIG. 1E, a protrusion 11a is provided on the end face of the third mask 11 and the protrusion 11a is formed.
When the recess 36 is formed on the end surface by a and the hard magnetic film 14 and the conductor film 15 are formed on the insulating layer 3, the protrusion 11 is formed.
The end surface 20 of the hard magnetic film 14 and the conductor film 15 is defined by a.
Can be tilted. The cross-sectional shapes of the protrusion 11a and the recess 36 can be variously changed. For example,
The protrusions and recesses have a triangular cross-sectional shape, and the end surface of the third mask 11 is formed in the formation region 13 as it goes upward.
It can also be an inclined surface that inclines to the side.

Next, as shown in FIG. 2C, a nonmagnetic insulating layer 16 is formed so as to cover the magnetoresistive effect element 18, the hard magnetic film 14 and the conductor film 15. Then
As shown in FIG. 2D, the upper magnetic shield layer 17 made of a magnetic film such as NiFe is formed on the insulating layer 16.

As described above, according to this embodiment, there is no possibility that the lower insulating layer 3 is over-etched when the magnetoresistive effect element 18 is first formed. Moreover, in the subsequent step of forming the hard magnetic film 14, there is no possibility that the lower insulating layer 3 is over-etched as well.

Moreover, according to the conventional method, counting from the step of FIG. 5A (same as the step of FIG. 1A) until the magnetoresistive effect element 18 is formed [FIG. Stage],
Although three steps are required, in the embodiment of the present invention, only two steps are required until the magnetoresistive effect element 18 is formed (step of FIG. 1C).

Further, according to the conventional manufacturing method, the step of FIG. 5A is performed until the formation of the magnetoresistive effect element 18, the hard magnetic film 14 and the conductor film 15 is completed [step of FIG. 6D]. Therefore, 9 steps are required. On the other hand, in the embodiment of the present invention, the magnetoresistive effect element 18, the hard magnetic film 1
4 and the formation of the conductor film 15 [step of FIG. 2 (b)], only 7 steps are required from the step of FIG. 1 (a).

A more specific production example will be described below. A magnetoresistive head was manufactured according to the manufacturing method shown in FIGS. However, as the lower shield layer 2, a magnetic film made of NiFe and having a thickness of 2 to 3 μm was formed by sputtering or electrodeposition. As the non-magnetic insulating layer 3, an alumina film having a thickness of 0.1 μm was formed.

The magnetoresistive layer 7 has a thickness of 20-4.
A NiFe film having a thickness of 0 nm, particularly preferably 30 nm, was formed. As the nonmagnetic conductor layer 8, a nonmagnetic conductor layer made of tantalum or titanium having a thickness of 10 to 30 nm, particularly preferably 20 nm, was formed. As the soft magnetic layer 9, Co
A soft magnetic layer of ZrMo or the like having a thickness of 20 to 40 nm, particularly preferably 30 nm, was formed.

The hard magnetic film 14 is made of CoCrPt and has a thickness of 20 to 50 nm, particularly preferably 30 to 40.
A hard magnetic film having a thickness of nm was formed by the sputtering method. As the conductor film 15, a film made of a non-magnetic conductor such as chromium, copper, gold, or tungsten having a thickness of 40 to 200 nm, particularly preferably 100 to 150 nm, was formed. A photoresist film was used as each mask.

The nonmagnetic insulating layer 16 has a thickness of 0.1 to 10.
An alumina film of 0.15 μm was formed by the sputtering method. The upper shield layer 17 has a thickness of NiFe of 2 to
A magnetic film having a thickness of 5 μm, particularly preferably 3 to 4 μm, was formed by electrodeposition plating.

By the above method, a magnetoresistive head having good characteristics could be manufactured. Then, the insulation failure of the insulating layer 3 did not occur at all.

On the other hand, a magnetoresistive head having exactly the same material and dimensions as above was produced according to the manufacturing method shown in FIGS. As a result, the insulating layer 3
The occurrence rate of insulation failure was within 2%.

[0049]

As described above, according to the present invention, the insulating layer, the magnetoresistive effect element provided on the insulating layer, and the hard magnetic film for controlling the magnetic domain of the magnetoresistive effect element. It is possible to provide a new method that does not require ion milling or the like when manufacturing a magnetoresistive head having a magnetic field effect head, and to reduce the number of manufacturing steps, and to insulate the underlying insulating layer. It is possible to prevent destruction.

[Brief description of drawings]

1A to 1E show process steps in sequentially forming a lower shield layer 2, an insulating layer 3, and a magnetoresistive effect element 18 on a substrate 1 according to the method of the present invention. FIG.

2 (a) to 2 (d) show respective process steps in sequentially forming a hard magnetic film 14, a conductor film 15, an insulating layer 16 and an upper shield layer 17 according to the method of the present invention. FIG.

3A is a schematic diagram showing a magnetic field when a hard magnetic film is formed on the upper surface of the magnetoresistive effect element 18, FIG.
(B) is a schematic diagram showing a magnetic field when a hard magnetic film is formed along the end surface of the magnetoresistive effect element 18, and (c).
FIG. 3 is a schematic diagram for explaining the dimensional relationship between the magnetoresistive effect element 18 and the hard magnetic film.

FIG. 4 is a partial perspective view showing the configuration of a magnetoresistive head.

5 (a) to 5 (e) are diagrams showing a conventional manufacturing method.
6 is a cross-sectional view showing each process step when the lower shield layer 2, the insulating layer 3, the magnetoresistive effect element 18, the hard magnetic film 14, and the conductor film 15 are sequentially formed on the substrate 1. FIG.

6 (a) to 6 (d) are diagrams showing a conventional manufacturing method.
FIG. 6 is a cross-sectional view showing each process step when the stencil 20 is further removed and the hard magnetic film 14 and the conductor film 15 having a predetermined shape are formed by the photoetching method.

7 is a cross-sectional view showing a magnetoresistive head manufactured by a conventional technique, with an enlarged view for explaining the state of an insulating layer 3. FIG.

[Explanation of symbols]

1 substrate 2 lower magnetic shield layer 3 insulating layer
3A First overetched part 3B
Part that is not over-etched 3C Part that is over-etched when forming a hard magnetic film 4 First mask 4a End surface protrusion 5 Magneto-resistive effect element formation region 7 Magneto-resistive effect layer 8 Non-magnetic conductor layer 9 Soft magnetic layer 10 Magnetoresistive effect element 18
End face (slope) 11 Third mask 11a
End surface side projection of third mask 11 12 Second mask 12a End surface side projection of second mask 12 1
3 Hard Magnetic Film Forming Area 14 Hard Magnetic Film 1
5 conductor film 16 upper insulating layer 17 upper magnetic shield layer 18 magnetoresistive effect element 6, 26,
36 recess

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[Procedure amendment]

[Submission date] November 22, 1995

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0005

[Correction method] Change

[Correction content]

In order to suppress the Barkhausen noise, it is effective to align the magnetization directions of the magnetoresistive effect element to form a single magnetic domain. As such a method of forming a single magnetic domain, US Pat. No. 3,840,898 discloses a method of forming a single magnetic domain by bonding a hard magnetic film to a magnetoresistive effect element. Further, Japanese Patent Laid-Open No. 62-40610 discloses a method using an antiferromagnetic film.

Claims (6)

[Claims] 1. An insulating layer, and a magnetoresistive element having at least a magnetoresistive layer, which is provided on the insulating layer.
A method of manufacturing a magnetoresistive head comprising a hard magnetic film for controlling magnetic domains of the magnetoresistive element, comprising: And a magnetoresistive effect element is formed on the insulating layer, and each constituent layer of the magnetoresistive effect element is formed on the first mask. Removed together with the constituent layers, forming a second mask on the magnetoresistive element, forming at least the hard magnetic film on the insulating layer and at least the hard magnetic film on the second mask. A method of manufacturing a magnetoresistive head, which comprises forming and removing the second mask. 2. A protrusion is provided on an end face of the first mask on the side where the magnetoresistive effect element is formed, and the protrusion forms a recess on the insulating layer side of the end face, and the magnetoresistive film is formed on the insulating layer. 2. The magnetoresistive head according to claim 1, wherein, when the effect element is formed, the end surface of the magnetoresistive effect element is formed into an inclined surface which is narrowed upward by the projection. Production method. 3. A protrusion is provided on an end face of the second mask, and when the protrusion forms a recess on the magnetoresistive element side of the end face, and the hard magnetic film is formed on the insulating layer, The hard magnetic film is formed along the inclined surface of the magnetoresistive effect element by the protrusion,
The method of manufacturing a magnetoresistive head according to claim 2. 4. The second mask is formed on the magnetoresistive effect element, and at the same time, a third mask is formed on the insulating layer so as to exclude a region where the hard magnetic film is formed. To form the hard magnetic film on the second mask and the third mask when forming the hard magnetic film,
The method of manufacturing a magnetoresistive head according to any one of claims 1 to 3, wherein the second mask and the third mask are removed. 5. The method of manufacturing a magnetoresistive head according to claim 1, wherein a conductor film is formed on the hard magnetic film. 6. A non-magnetic conductor layer is formed on the magneto-resistive effect layer, and a soft magnetic layer is formed on the non-magnetic conductor, whereby the magneto-resistive effect element is formed on the magneto-resistive effect layer and the non-magnetic element. 6. The method for manufacturing a magnetoresistive head according to claim 1, wherein the magnetoresistive head comprises a conductor layer and the soft magnetic layer.