JPH0810782B2 - ２次元モノリシック干渉性半導体レーザーアレイ - Google Patents

２次元モノリシック干渉性半導体レーザーアレイ

Info

Publication number
JPH0810782B2
JPH0810782B2 JP5015044A JP1504493A JPH0810782B2 JP H0810782 B2 JPH0810782 B2 JP H0810782B2 JP 5015044 A JP5015044 A JP 5015044A JP 1504493 A JP1504493 A JP 1504493A JP H0810782 B2 JPH0810782 B2 JP H0810782B2
Authority
JP
Japan
Prior art keywords
leaky
array
refractive index
waveguide array
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5015044A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0685404A (ja
Inventor
ジャンセン マイケル
ボテツ ダン
ジェイ モースト ルーク
ジェイ ロース トーマス
ジェイ ヤング ジェイン
Original Assignee
ティアールダブリュー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ティアールダブリュー インコーポレイテッド filed Critical ティアールダブリュー インコーポレイテッド
Publication of JPH0685404A publication Critical patent/JPH0685404A/ja
Publication of JPH0810782B2 publication Critical patent/JPH0810782B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP5015044A 1992-03-12 1993-02-02 ２次元モノリシック干渉性半導体レーザーアレイ Expired - Fee Related JPH0810782B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/849911 1992-03-12
US07/849,911 US5276700A (en) 1992-03-12 1992-03-12 2-D monolithic coherent semiconductor laser array

Publications (2)

Publication Number Publication Date
JPH0685404A JPH0685404A (ja) 1994-03-25
JPH0810782B2 true JPH0810782B2 (ja) 1996-01-31

Family

ID=25306818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5015044A Expired - Fee Related JPH0810782B2 (ja) 1992-03-12 1993-02-02 ２次元モノリシック干渉性半導体レーザーアレイ

Country Status (4)

Country Link
US (1) US5276700A (enExample)
EP (1) EP0560474B1 (enExample)
JP (1) JPH0810782B2 (enExample)
DE (1) DE69306617T2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914833B2 (ja) * 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ
US5349602A (en) * 1993-03-15 1994-09-20 Sdl, Inc. Broad-area MOPA device with leaky waveguide beam expander
US5539759A (en) * 1994-10-04 1996-07-23 Board Of Trustees Of The Leland Stanford Junior University Single mode laser with a passive antiguide region
US5657157A (en) * 1995-06-23 1997-08-12 Sdl, Inc. Semiconductor optical amplifying media with reduced self-focusing
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7457340B2 (en) * 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US6885686B2 (en) * 2002-01-18 2005-04-26 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3411314A1 (de) * 1984-03-27 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Laserdioden-array
US4860298A (en) * 1988-04-12 1989-08-22 Dan Botez Phased-locked array of semiconductor lasers using closely spaced antiguides
JPS63260187A (ja) * 1987-04-17 1988-10-27 Oki Electric Ind Co Ltd 半導体レ−ザアレイ
JPH01175280A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
US5025451A (en) * 1989-10-20 1991-06-18 Trw Inc. Two-dimensional integrated laser array
US5063570A (en) * 1990-10-29 1991-11-05 Trw Inc. Semiconductor laser arrays using leaky wave interarray coupling
US5101413A (en) * 1991-05-10 1992-03-31 Trw Inc. Large-aperture light sources using resonant leaky-wave coupling

Also Published As

Publication number Publication date
EP0560474A2 (en) 1993-09-15
EP0560474A3 (enExample) 1994-01-05
DE69306617D1 (de) 1997-01-30
US5276700A (en) 1994-01-04
JPH0685404A (ja) 1994-03-25
DE69306617T2 (de) 1997-04-17
EP0560474B1 (en) 1996-12-18

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