JPH08102549A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPH08102549A JPH08102549A JP23648394A JP23648394A JPH08102549A JP H08102549 A JPH08102549 A JP H08102549A JP 23648394 A JP23648394 A JP 23648394A JP 23648394 A JP23648394 A JP 23648394A JP H08102549 A JPH08102549 A JP H08102549A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- layer
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本願発明は、たとえば青色発光Ｌ
ＥＤのようにサファイア基板などの透光性基板が用いら
れるタイプの半導体発光素子に関する。BACKGROUND OF THE INVENTION The present invention relates to, for example, blue light emission L.
The present invention relates to a semiconductor light emitting device of a type in which a transparent substrate such as a sapphire substrate is used like an ED.
【０００２】[0002]
【従来の技術】近年においては、サファイア基板上に窒
化ガリウム系の半導体層を形成することにより、青色の
発光が得られるようにした青色ＬＥＤが種々開発されて
いるが、上記サファイア基板は透明基板である。したが
って、ｎ型およびｐ型の両半導体層の間に形成された発
光層から発せられた光は、基板表面上に積層された半導
体層のうち最表層の部位や発光層の側面部から外部へ出
射する他、透明基板を透過して透明基板の下方向へも出
射する。これでは、ＬＥＤランプを製作する場合におい
て、半導体発光素子の上面側において高い発光輝度が得
られない。また、光が様々な方向に散乱し、一定の方向
性をもたせることもできない。2. Description of the Related Art In recent years, various blue LEDs have been developed in which a gallium nitride based semiconductor layer is formed on a sapphire substrate to obtain blue light emission. The sapphire substrate is a transparent substrate. Is. Therefore, the light emitted from the light emitting layer formed between both the n-type and p-type semiconductor layers is emitted to the outside from the outermost surface portion of the semiconductor layers stacked on the substrate surface or the side surface portion of the light emitting layer. In addition to emitting light, the light also passes through the transparent substrate and is emitted downward in the transparent substrate. With this, when manufacturing an LED lamp, high emission brightness cannot be obtained on the upper surface side of the semiconductor light emitting element. Further, the light is scattered in various directions, and it is not possible to give a certain directionality.
【０００３】そこで、従来では、皿状に形成された金属
製の反射器内に半導体発光素子を配置させてダイボンド
することにより、透光性基板の裏面などから出射する光
を反射器によって一定方向へ反射させるようにしてい
た。Therefore, conventionally, by placing a semiconductor light emitting element in a metal reflector formed in a dish shape and die-bonding the light, the light emitted from the back surface of the transparent substrate or the like is directed in a certain direction by the reflector. I was supposed to reflect.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の反射器を用いる手段では、反射器を別途必要とする
ために、ＬＥＤランプを製造する際の全体の部品点数が
増加し、その製造コストが高価となる難点があった。ま
た、反射器のサイズは半導体発光素子よりもかなり大き
なサイズに形成する必要がある。したがって、この反射
器を組み込む必要性から、ＬＥＤランプ全体が大型化す
るという難点も生じていた。However, in the above-mentioned conventional means using the reflector, since the reflector is separately required, the total number of parts in manufacturing the LED lamp is increased and the manufacturing cost thereof is increased. There was a drawback that it was expensive. The size of the reflector needs to be considerably larger than that of the semiconductor light emitting device. Therefore, the necessity of incorporating this reflector also causes a problem that the entire LED lamp becomes large.
【０００５】本願発明は、このような事情のもとで考え
出されたものであって、透光性基板を用いた半導体発光
素子において透光性基板の裏面などから光が無駄に出射
されるようなことを反射器を用いることなく解消し、ま
たは減少させるようにし、もって半導体発光素子から発
せられる光に一定の方向性をもたせ、発光輝度を高める
ことをその課題としている。The present invention has been devised under such circumstances, and in a semiconductor light emitting device using a transparent substrate, light is wastefully emitted from the back surface of the transparent substrate or the like. It is an object to solve or reduce such a thing without using a reflector, and thereby to give light emitted from the semiconductor light emitting element a certain directionality to increase the emission brightness.
【０００６】[0006]
【課題を解決するための手段】上記の課題を解決するた
め、本願発明では、次の技術的手段を講じている。In order to solve the above problems, the present invention takes the following technical means.
【０００７】すなわち、本願の請求項１に記載の発明
は、透光性基板の表面上に、ｎ型半導体層、発光層、お
よびｐ型半導体層から構成される積層部が形成されてい
る半導体発光素子であって、少なくとも上記透光性基板
の裏面または各側面には、上記発光層から発せられて透
光性基板を透過してくる光を反射させるための光反射膜
が形成されていることを特徴としている。That is, the invention according to claim 1 of the present application is a semiconductor in which a laminated portion including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer is formed on the surface of a transparent substrate. A light-emitting element, wherein at least a back surface or each side surface of the translucent substrate is formed with a light reflection film for reflecting light emitted from the light-emitting layer and transmitted through the translucent substrate. It is characterized by that.
【０００８】本願の請求項２に記載の発明は、上記請求
項１に記載の半導体発光素子において、上記光反射膜
は、上記透光性基板の裏面および各側面に形成されてい
るとともに、上記透光性基板の各側面は、これら各側面
に形成されている光反射膜の内面側が透光性基板の表面
側に向く傾斜状となるように傾斜していることを特徴と
している。According to a second aspect of the present invention, in the semiconductor light emitting element according to the first aspect, the light reflecting film is formed on the back surface and each side surface of the transparent substrate, and Each side surface of the translucent substrate is characterized in that it is inclined so that the inner surface side of the light reflecting film formed on each side surface is inclined toward the surface side of the translucent substrate.
【０００９】本願の請求項３に記載の発明は、上記請求
項２に記載の半導体発光素子において、上記光反射膜は
導電性材料によって形成されているとともに、この光反
射膜は、絶縁基板としての上記透光性基板の表面上に形
成された積層部のうち最下層に位置するｎ型またはｐ型
の半導体層と導通して設けられていることを特徴として
いる。According to a third aspect of the present invention, in the semiconductor light emitting device according to the second aspect, the light reflecting film is formed of a conductive material, and the light reflecting film serves as an insulating substrate. Of the laminated part formed on the surface of the above-mentioned translucent substrate, and is provided so as to be electrically connected to the n-type or p-type semiconductor layer located at the lowermost layer.
【００１０】[0010]
【発明の作用および効果】上記請求項１に記載の発明に
おいては、少なくとも透光性基板の裏面または各側面に
は光反射膜が形成されているために、発光層から透光性
基板の裏面側方向に発せられた光を、この光反射膜によ
って透光性基板の表面側へ反射させることができる。し
たがって、透光性基板の裏面または側面から漏れを生じ
る光量を減少させて、透光性基板の積層部の最表層の部
位から出射する光量を増加させることができる。In the invention described in claim 1, since the light reflecting film is formed on at least the back surface or each side surface of the light transmitting substrate, the light emitting layer to the back surface of the light transmitting substrate are provided. The light emitted in the lateral direction can be reflected to the surface side of the translucent substrate by this light reflecting film. Therefore, it is possible to reduce the amount of light leaking from the back surface or the side surface of the translucent substrate and increase the amount of light emitted from the outermost layer of the laminated portion of the translucent substrate.
【００１１】その結果、従来に比較して、発光輝度を高
め、またその光に一定の方向性をもたせることができ
る。したがって、発光ランプを製造する場合において
は、発光輝度の向上などを目的として必ずしも皿状など
の反射器を用いる必要はなくなり、部品点数の削減によ
る発光ランプの製造作業の容易化、ならびに発光ランプ
の小型化を図ることができるという格別な効果が得られ
る。As a result, it is possible to increase the luminance of emitted light and to give the light a certain directionality as compared with the conventional one. Therefore, when manufacturing a light-emitting lamp, it is not always necessary to use a dish-shaped reflector or the like for the purpose of improving the light-emission luminance, etc., and the light-emitting lamp manufacturing work is facilitated by reducing the number of parts, and An extraordinary effect that the size can be reduced can be obtained.
【００１２】請求項２に記載の発明においては、光反射
膜が透光性基板の裏面および各側面に形成されているこ
とにより、発光層から透光性基板の裏面側方向に発せら
れた光のほぼ全量を透光性基板の表面側へ反射させるこ
とができるばかりか、透光性基板の各側面が傾斜してい
ることにより、これら各側面に形成された光反射膜にあ
たった光を直接的に、かつ効率よく透光性基板の表面側
へ反射させることもできる。したがって、半導体発光素
子の表面側における発光輝度を一層高めることができる
という効果が得られる。In the invention according to claim 2, since the light reflecting film is formed on the back surface and each side surface of the transparent substrate, the light emitted from the light emitting layer toward the rear surface side of the transparent substrate. Not only is it possible to reflect almost the entire amount of the light to the front surface side of the transparent substrate, but also because each side surface of the transparent substrate is inclined, the light hitting the light reflection film formed on each side surface can be reflected. It can also be reflected directly and efficiently to the surface side of the transparent substrate. Therefore, it is possible to obtain the effect that the light emission luminance on the front surface side of the semiconductor light emitting element can be further increased.
【００１３】請求項３に記載の発明においては、光反射
膜が導電性材料によって形成され、しかもこの光反射膜
が絶縁基板としての透光性基板の表面に形成された積層
部のうち最下層に位置する半導体層に導通しているため
に、この光反射膜を積層部の最下層に位置する半導体層
についての電極として機能させることが可能となる。し
たがって、最下層の半導体層に対して電極を別途設ける
必要を無くし、電極形成作業の簡素化を図ることができ
るという利点が得られる。In a third aspect of the invention, the light reflecting film is formed of a conductive material, and the light reflecting film is the lowermost layer of the laminated portion formed on the surface of the transparent substrate as the insulating substrate. Since it is electrically connected to the semiconductor layer located at, the light reflection film can be made to function as an electrode for the semiconductor layer located at the bottom of the laminated portion. Therefore, there is an advantage that it is not necessary to separately provide an electrode for the lowermost semiconductor layer, and the electrode forming work can be simplified.
【００１４】また、このように透光性基板の裏面に形成
されている光反射膜を電極として機能させることができ
るために、この光反射膜をリードフレームなどに導電接
着させれば、最下層の半導体層に対して金線を用いたワ
イヤボンディング作業を行う必要も無くすことができ
る。したがって、半導体発光素子のボンディング作業も
容易に行え、発光ランプの製造作業能率を一層良好にで
きるという効果も得られる。Further, since the light reflecting film formed on the back surface of the light transmissive substrate can function as an electrode, if the light reflecting film is conductively adhered to a lead frame or the like, the lowermost layer can be formed. It is also possible to eliminate the need to perform wire bonding work using a gold wire on the semiconductor layer. Therefore, it is possible to easily perform the bonding work of the semiconductor light emitting device and further improve the manufacturing work efficiency of the light emitting lamp.
【００１５】[0015]
【実施例の説明】以下、本願発明の好ましい実施例を、
図面を参照しつつ具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention will be described below.
A specific description will be given with reference to the drawings.
【００１６】図１は、本願発明に係る半導体発光素子の
一例を示す断面図である。FIG. 1 is a sectional view showing an example of a semiconductor light emitting device according to the present invention.
【００１７】図１に示す半導体発光素子１は、青色ＬＥ
Ｄとして構成されたものであり、透光性基板としてのサ
ファイア基板２の表面に、ｎ型半導体層３、発光層４、
およびｐ型半導体層５から構成される積層部６を形成し
たものである。また、この積層部６およびサファイア基
板２の各側面やサファイア基板２の裏面には、光反射膜
７が形成されている。The semiconductor light emitting device 1 shown in FIG. 1 is a blue LE.
The D-type semiconductor layer 3, the light-emitting layer 4, and the n-type semiconductor layer 3 are formed on the surface of the sapphire substrate 2 as a transparent substrate.
And a laminated portion 6 composed of the p-type semiconductor layer 5 is formed. A light reflection film 7 is formed on each side surface of the laminated portion 6 and the sapphire substrate 2 and on the back surface of the sapphire substrate 2.
【００１８】上記積層部６は、サファイア基板２の表面
上に窒化ガリウムのバッファ層８を成長させ、その表面
に順次ｎ型半導体層３などを形成したものである。積層
部６の具体的な構成としては、ｎ型半導体層３が、ｎ型
ＧａＮ層３１、およびｎ型ＡｌＧａＮ層３２（Ａｌ0.2
Ｇａ0.8 Ｎ）によって形成されている。発光層４は、Ｉ
ｎＧａＮ層（Ｉｎ0.15Ｇａ0.85Ｎ）によって形成されて
いる。また、ｐ型半導体層５は、ｐ型ＡｌＧａＮ層５１
（Ａｌ0.2 Ｇａ0.8 Ｎ）、およびｐ型ＧａＮ層５２によ
って形成されている。このうち最表層のｐ型ＧａＮ層５
２の上面には、Ｔｉ，Ａｕ，Ｎｉ製などの電極９ａが形
成されている。なお、上記各層の厚みは、下層側から各
層３１，３２，４，５１，５２の順に、たとえば３μ
ｍ、３００ｎｍ、５０ｎｍ、３００ｎｍ、１５０ｎｍに
設定されている。The laminated portion 6 is formed by growing a gallium nitride buffer layer 8 on the surface of the sapphire substrate 2 and sequentially forming the n-type semiconductor layer 3 and the like on the surface. As a specific configuration of the laminated portion 6, the n-type semiconductor layer 3 includes an n-type GaN layer 31, and an n-type AlGaN layer 32 (Al 0.2
Ga 0.8 N). The light emitting layer 4 is I
It is formed of an nGaN layer (In 0.15 Ga 0.85 N). The p-type semiconductor layer 5 is the p-type AlGaN layer 51.
(Al 0.2 Ga 0.8 N) and the p-type GaN layer 52. Of these, the outermost p-type GaN layer 5
An electrode 9a made of Ti, Au, Ni or the like is formed on the upper surface of 2. The thickness of each layer is, for example, 3 μm in the order of the layers 31, 32, 4, 51, 52 from the lower layer side.
m, 300 nm, 50 nm, 300 nm, 150 nm.
【００１９】上記サファイア基板２は、その厚さが１０
分の数ｍｍ程度であり、透光性を有する他、電気絶縁性
を有するものである。このサファイア基板２は、たとえ
ば平面矢視において一辺が０．５ｍｍ程度の正方形状の
チップに形成されているが、その各側面２０ｂはテーパ
状に形成されている。The sapphire substrate 2 has a thickness of 10
It is about a few millimeters, and in addition to having translucency, it has electrical insulation. The sapphire substrate 2 is formed into a square chip having a side of about 0.5 mm in plan view, for example, and each side surface 20b thereof is formed into a tapered shape.
【００２０】上記光反射膜７の具体的な材質としては、
光の反射率が比較的高く、かつ導電性を有するＡｌ，Ｃ
ｕ，Ｃｒなどが採用されている。この光反射膜７は、上
記サファイア基板２の裏面２０ａ、テーパ状の各側面２
０ｂ、および積層部６の各側面にわたって形成されてい
る。ただし、積層部６のうち最下層のｎ型ＧａＮ層３１
を除く他の半導体層の側面には、酸化シリコンなどの絶
縁膜１０が形成されており、これにより上記光反射膜７
が積層部６のｎ型ＧａＮ層３１以外の半導体層に導通し
ないようになっている。これに対し、最下層のｎ型Ｇａ
Ｎ層３１の側面には絶縁膜１０は設けられておらず、上
記光反射膜７はこのｎ型ＧａＮ層３１の側面と導通接触
している。As a concrete material of the light reflection film 7,
Al, C having relatively high light reflectance and conductivity
u, Cr, etc. are adopted. The light reflecting film 7 includes the back surface 20a of the sapphire substrate 2 and the tapered side surfaces 2 of the sapphire substrate 2.
0b and each side surface of the laminated portion 6 are formed. However, the lowermost n-type GaN layer 31 in the laminated portion 6
An insulating film 10 made of silicon oxide or the like is formed on the side surfaces of the other semiconductor layers except the above.
Does not conduct to the semiconductor layers other than the n-type GaN layer 31 of the laminated portion 6. On the other hand, the lowermost n-type Ga
The insulating film 10 is not provided on the side surface of the N layer 31, and the light reflection film 7 is in conductive contact with the side surface of the n-type GaN layer 31.
【００２１】上記半導体発光素子１の製造方法の具体例
としては、まず有機金属化学気相成長法（ＭＯＣＶＤ
法）によって、サファイア基板２上に所定成分の単結晶
を順次成長させて積層部６を形成する。次いで、サファ
イア基板２の各側面２０ｂをテーパ状に形成する加工
や、上記積層部６の側面の所定箇所に絶縁膜１０を形成
する処理を行う。サファイア基板２の各側面２０ｂをテ
ーパ状に形成する加工は、エッチングにより行える他、
サファイア製のウエハをダイシングするためのダイヤモ
ンド刃の刃先をテーパ状に形成しておくことによっても
行える。そして、その後は、上記積層部６の側面や、サ
ファイア基板２の裏面２０ａや各側面２０ｂに光反射膜
７を形成するためのＡｌなどの材料をスパッタリングな
どによって被着させ、成膜させればよい。As a specific example of the method of manufacturing the semiconductor light emitting device 1, first, a metal organic chemical vapor deposition method (MOCVD) is used.
Method), a single crystal of a predetermined component is sequentially grown on the sapphire substrate 2 to form the laminated portion 6. Next, processing for forming each side surface 20b of the sapphire substrate 2 into a tapered shape or processing for forming the insulating film 10 at a predetermined position on the side surface of the laminated portion 6 is performed. The processing for forming each side surface 20b of the sapphire substrate 2 into a tapered shape can be performed by etching,
This can also be done by forming the cutting edge of a diamond blade for dicing a sapphire wafer into a tapered shape. Then, after that, a material such as Al for forming the light reflection film 7 is deposited on the side surface of the laminated portion 6, the back surface 20a of the sapphire substrate 2 or each side surface 20b by sputtering or the like to form a film. Good.
【００２２】上記構成の半導体発光素子１を用いて発光
ランプを製作するには、たとえば図２に示すように、リ
ードフレーム２５のリード２５ａ上に半導体発光素子１
を載置し、光反射膜７を導電性接着剤を介して接着させ
ればよい。光反射膜７は、最下層のｎ型ＧａＮ層３１と
導通しているために、これによりｎ型ＧａＮ層３１をリ
ード２５ａに導通させることができる。したがって、半
導体発光素子１のワイヤボンディングは、１本の金線２
６を用いて電極９ａをリード２５ｂに接続させるだけで
よく、ボンディング作業が容易となる。In order to manufacture a light emitting lamp using the semiconductor light emitting device 1 having the above structure, for example, as shown in FIG. 2, the semiconductor light emitting device 1 is mounted on the lead 25a of the lead frame 25.
And the light reflecting film 7 may be adhered thereto via a conductive adhesive. Since the light reflection film 7 is electrically connected to the lowermost n-type GaN layer 31, this allows the n-type GaN layer 31 to be electrically connected to the lead 25a. Therefore, the wire bonding of the semiconductor light emitting device 1 is performed by using one gold wire 2
It is only necessary to connect the electrode 9a to the lead 25b by using 6, and the bonding work becomes easy.
【００２３】上記ダイボンディングが行われた状態にお
いて、半導体発光素子１に電流供給を行うと、発光層４
が青色に発光するが、その光は最表層のｐ型ＧａＮ層５
２の部位から上方向へ出射する他、下方向や水平方向に
も発せられる。ところが、下方向の光がサファイア基板
２を透過すると、このサファイア基板２の裏面２ａや側
面２ｂに形成された光反射膜７によって上方向に反射さ
れる。When current is supplied to the semiconductor light emitting element 1 in the state where the die bonding is performed, the light emitting layer 4
Emits blue light, but the light is emitted from the outermost p-type GaN layer 5
In addition to being emitted upward from the part 2, it is also emitted downward and horizontally. However, when the downward light passes through the sapphire substrate 2, the downward light is reflected upward by the light reflection film 7 formed on the back surface 2a and the side surface 2b of the sapphire substrate 2.
【００２４】とくに、サファイア基板２の各側面２ｂに
形成された光反射膜７は、その内面側がサファイア基板
２の表面側を向く傾斜状に形成されているから、これら
各側面２ｂに到達した光は、その傾斜状の光反射膜７に
よって効率よく上方向に反射され、最表層のｐ型ＧａＮ
層５２の部位から上方へ出射する。さらに、水平方向の
光も、積層部６の各側面に設けられた光反射膜７によっ
て内側に反射されることにより、外部へ漏れを生じるこ
とが防止され、半導体発光素子１内における反射を繰り
返すことにより、やはり最表層のｐ型ＧａＮ層５２の部
位から上方へ出射する。In particular, the light reflection film 7 formed on each side surface 2b of the sapphire substrate 2 has an inner surface inclined so as to face the surface side of the sapphire substrate 2. Are efficiently reflected upward by the inclined light reflecting film 7, and the p-type GaN of the outermost layer is
The light is emitted upward from the portion of the layer 52. Further, the light in the horizontal direction is also reflected inward by the light reflection film 7 provided on each side surface of the laminated portion 6, whereby leakage to the outside is prevented, and reflection inside the semiconductor light emitting element 1 is repeated. As a result, the light is emitted upward from the portion of the p-type GaN layer 52 which is the outermost layer.
【００２５】結局、上記発光層４から発せられた光は、
半導体発光素子１の側面部や下面部から漏れを生じるこ
となく、最表層のｐ型ＧａＮ層５２の部位から上方向に
出射する。したがって、半導体発光素子１の上面側にお
ける発光輝度を高めることができる。これは、赤色や緑
色などの発光ＬＥＤに比較すると、発光輝度を高める点
で技術的な難点を有していた青色発光ＬＥＤとしては、
とくに有意義である。After all, the light emitted from the light emitting layer 4 is
The light is emitted upward from the outermost p-type GaN layer 52 without leaking from the side surface and the lower surface of the semiconductor light emitting device 1. Therefore, the emission brightness on the upper surface side of the semiconductor light emitting element 1 can be increased. This is a blue light emitting LED, which has a technical difficulty in increasing the light emission brightness as compared with red and green light emitting LEDs.
Especially meaningful.
【００２６】また、上記したように光に上向きの方向性
を持たせて、その発光輝度を高めることができれば、発
光ランプを製作するに際し、従来用いられていた皿状の
反射器を用いる必要はなくなる。したがって、発光ラン
プの製作の容易化、および小型化も図れる。Further, if the light can be directed upward as described above and the emission brightness thereof can be increased, it is not necessary to use the dish-shaped reflector that has been conventionally used in manufacturing a light-emitting lamp. Disappear. Therefore, the manufacturing of the light emitting lamp can be facilitated and the size thereof can be reduced.
【００２７】なお、上記実施例では、光反射膜７をサフ
ァイア基板２に設けるだけではなく、積層部６の側面に
も形成したが、本願発明は必ずしもこれに限定されな
い。たとえば、図３に示すように、光反射膜７を積層部
６の側面には形成せず、サファイア基板２の裏面２ａや
各側面２ｂにのみ形成してもよい。この場合には、発光
層４の側面から横方向へ発せられる光を光反射膜７によ
って反射させることができず、光の漏れを生じさせてし
まうが、発光層４から下方向に発せられる光については
光反射膜７によって上方向に反射させることができ、や
はり高い発光輝度を得ることが可能である。Although the light reflecting film 7 is formed not only on the sapphire substrate 2 but also on the side surface of the laminated portion 6 in the above embodiment, the present invention is not necessarily limited to this. For example, as shown in FIG. 3, the light reflection film 7 may not be formed on the side surface of the laminated portion 6, but may be formed only on the back surface 2a or each side surface 2b of the sapphire substrate 2. In this case, the light emitted laterally from the side surface of the light emitting layer 4 cannot be reflected by the light reflection film 7 and light is leaked, but the light emitted downward from the light emitting layer 4 is generated. With respect to the above, the light reflection film 7 can be reflected upward, and also high emission brightness can be obtained.
【００２８】また、積層部６の全体の厚み寸法は、たと
えば４μｍに満たない数値であるのに対し、サファイア
基板２の厚みは数百μｍ程度であり、積層部６に比較す
るとサファイア基板２は圧倒的に大きな厚みである。こ
のため、発光層４の側面から横方向へ発せられる光の量
は、サファイア基板２を透過して下方向などに発せられ
る他の光の量に比較するとかなり小さいのが実情であ
る。したがって、発光層４の側面から横方向へ発せられ
る光を反射させなくても、その発光輝度が、図１で示し
た実施例の場合に比較して大幅に低下するようなことは
ない。Further, the total thickness dimension of the laminated portion 6 is less than 4 μm, for example, whereas the thickness of the sapphire substrate 2 is about several hundred μm. It is overwhelmingly thick. Therefore, in reality, the amount of light emitted laterally from the side surface of the light emitting layer 4 is considerably smaller than the amount of other light transmitted downward through the sapphire substrate 2. Therefore, even if the light emitted from the side surface of the light emitting layer 4 in the lateral direction is not reflected, the light emission luminance thereof does not significantly decrease as compared with the case of the embodiment shown in FIG.
【００２９】また、上記図１で示した実施例では、光反
射膜７の一部をｎ型ＧａＮ層３１に導通させ、ボンディ
ング作業などに便宜が図れるようにしているが（請求項
３に対応）、請求項１および２に記載の本願発明は必ず
しもこれに限定されない。上記図３で示した半導体発光
素子のように、積層部６の一部の領域Ｂをエッチング
し、最下層のｎ型ＧａＮ層３１の上面に、電極９ｂを形
成してもよい。In the embodiment shown in FIG. 1, part of the light reflection film 7 is electrically connected to the n-type GaN layer 31 to facilitate the bonding work (corresponding to claim 3). ), The present invention described in claims 1 and 2 is not necessarily limited to this. As in the semiconductor light emitting device shown in FIG. 3 above, a part of the region B of the laminated portion 6 may be etched to form the electrode 9b on the upper surface of the lowermost n-type GaN layer 31.
【００３０】さらに、上記図１および図３に示した各実
施例では、サファイア基板２の各側面２ｂを傾斜状に形
成しているが（請求項２に対応）、請求項１に記載の本
願発明はこれに限定されない。たとえば図４に示すよう
に、サファイア基板２の各側面２ｂを傾斜状に形成せ
ず、裏面２ａと直交する側面としてもよい。このような
構成であっても、サファイア基板２を透過してくる光を
光反射膜７によって反射させることでき、外部への光の
漏れを防止することてきる。そして、多数回の光反射が
繰り返されることにより、サファイア基板２の上側方向
へ光を出射させることが可能である。Further, in each of the embodiments shown in FIGS. 1 and 3, each side surface 2b of the sapphire substrate 2 is formed in an inclined shape (corresponding to claim 2). The invention is not limited to this. For example, as shown in FIG. 4, each side surface 2b of the sapphire substrate 2 may not be formed in an inclined shape but may be a side surface orthogonal to the back surface 2a. Even with such a configuration, the light passing through the sapphire substrate 2 can be reflected by the light reflection film 7, and the leakage of light to the outside can be prevented. By repeating the light reflection many times, it is possible to emit light toward the upper side of the sapphire substrate 2.
【００３１】さらに、本願発明は、図５または図６に示
すように構成しても構わない。すなわち、図５に示す半
導体発光素子では、光反射膜７をサファイア基板２の裏
面２ａのみに設けた構成である。このような構成では、
サファイア基板２の側面２ｂに到達した光は外部に漏れ
を生じるが、それ以外の大半の光については光反射膜７
によって上方向へ反射させることができる。したがっ
て、従来に比較すると、やはり発光輝度を高めることが
できる利点が得られる。Further, the present invention may be configured as shown in FIG. 5 or 6. That is, in the semiconductor light emitting device shown in FIG. 5, the light reflecting film 7 is provided only on the back surface 2 a of the sapphire substrate 2. In such a configuration,
The light that has reached the side surface 2b of the sapphire substrate 2 leaks to the outside, but for most other light, the light reflection film 7
Can be reflected upward. Therefore, as compared with the conventional case, there is an advantage that the emission brightness can be increased.
【００３２】図６に示す半導体発光素子では、サファイ
ア基板２の各側面２ｂのみに光反射膜７が設けられてい
る。このような構成では、この半導体発光素子単体で
は、発光層４から下向きに発せられる光を適切に上方向
へ反射させることはできない。しかし、この半導体発光
素子をリードフレームなどの所定箇所にダイボンディン
グする場合において、そのボンディング面２７が光の反
射作用を有する場合があり、このような場合にこの半導
体発光素子が用いられる。すなわち、この半導体発光素
子では、上記ボンディング面２７を反射面として利用
し、下方向に発せられる光を効率よく上方向へ反射させ
るようにボンディングを行って使用する。そして、サフ
ァイア基板２の各側面２ｂに到達する光については、光
反射膜７によって内側へ反射させることができる。した
がって、この場合においても、従来に比較して発光輝度
を高めることが可能である。In the semiconductor light emitting device shown in FIG. 6, the light reflecting film 7 is provided only on each side surface 2b of the sapphire substrate 2. With such a structure, the semiconductor light emitting element alone cannot appropriately reflect the light emitted downward from the light emitting layer 4 in the upward direction. However, when this semiconductor light emitting element is die-bonded to a predetermined location such as a lead frame, the bonding surface 27 may have a light reflecting function, and in such a case, this semiconductor light emitting element is used. That is, in this semiconductor light emitting device, the bonding surface 27 is used as a reflecting surface, and bonding is performed so that the light emitted downward is efficiently reflected upward. Then, the light reaching each side surface 2 b of the sapphire substrate 2 can be reflected inward by the light reflecting film 7. Therefore, even in this case, it is possible to increase the emission brightness as compared with the conventional case.
【００３３】さらに、上記実施例では、青色発光ＬＥＤ
を一例として説明したが、本願発明はこれに限定され
ず、透光性基板を用いた半導体発光素子全般に適用可能
である。したがって、ｎ型半導体層、発光層、およびｐ
型半導体層などの各部の具体的な材質なども限定され
ず、各部の具体的な構成は種々に設計変更自在である。Further, in the above embodiment, the blue light emitting LED is used.
However, the present invention is not limited to this, and is applicable to all semiconductor light emitting devices using a transparent substrate. Therefore, the n-type semiconductor layer, the light emitting layer, and the p
The specific material of each part such as the type semiconductor layer is not limited, and the specific configuration of each part can be variously changed in design.
【図１】本願発明に係る半導体発光素子の一例を示す断
面図。FIG. 1 is a sectional view showing an example of a semiconductor light emitting device according to the present invention.
【図２】図１に示す半導体発光素子のダイボンディング
の一例を示す説明図。FIG. 2 is an explanatory diagram showing an example of die bonding of the semiconductor light emitting device shown in FIG.
【図３】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 3 is a cross-sectional view showing another example of the semiconductor light emitting device according to the present invention.
【図４】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 4 is a cross-sectional view showing another example of the semiconductor light emitting device according to the present invention.
【図５】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 5 is a cross-sectional view showing another example of the semiconductor light emitting device according to the present invention.
【図６】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 6 is a sectional view showing another example of a semiconductor light emitting device according to the present invention.
１ 半導体発光素子 ２ 透光性基板（サファイア基板） ３ ｎ型半導体層 ４ 発光層 ５ ｐ型半導体層 ６ 積層部 ７ 光反射膜 1 Semiconductor Light-Emitting Element 2 Translucent Substrate (Sapphire Substrate) 3 n-Type Semiconductor Layer 4 Light-Emitting Layer 5 p-Type Semiconductor Layer 6 Laminated Part 7 Light-Reflecting Film
Claims (3)
発光層、およびｐ型半導体層から構成される積層部が形
成されている半導体発光素子であって、 少なくとも上記透光性基板の裏面または各側面には、上
記発光層から発せられて透光性基板を透過してくる光を
反射させるための光反射膜が形成されていることを特徴
とする、半導体発光素子。1. An n-type semiconductor layer on the surface of a transparent substrate,
A semiconductor light-emitting device having a light-emitting layer and a laminated portion composed of a p-type semiconductor layer, wherein the light-emitting layer emits light from at least the back surface or each side surface of the light-transmissive substrate. A semiconductor light emitting device, characterized in that a light reflecting film for reflecting the light transmitted through the substrate is formed.
および各側面に形成されているとともに、 上記透光性基板の各側面は、これら各側面に形成されて
いる光反射膜の内面側が透光性基板の表面側に向く傾斜
状となるように傾斜していることを特徴とする、請求項
１に記載の半導体発光素子。2. The light reflecting film is formed on the back surface and each side surface of the light transmitting substrate, and each side surface of the light transmitting substrate is a light reflecting film formed on each side surface. The semiconductor light emitting element according to claim 1, wherein the inner surface side is inclined so as to be inclined toward the front surface side of the transparent substrate.
されているとともに、この光反射膜は、絶縁基板として
の上記透光性基板の表面上に形成された積層部のうち最
下層に位置するｎ型またはｐ型の半導体層と導通して設
けられていることを特徴とする、請求項２に記載の半導
体発光素子。3. The light reflecting film is formed of a conductive material, and the light reflecting film is located at the bottom layer of a laminated portion formed on the surface of the light transmitting substrate as an insulating substrate. The semiconductor light emitting element according to claim 2, wherein the semiconductor light emitting element is provided so as to be electrically connected to the n-type or p-type semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23648394A JP3326545B2 (en) | 1994-09-30 | 1994-09-30 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23648394A JP3326545B2 (en) | 1994-09-30 | 1994-09-30 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08102549A true JPH08102549A (en) | 1996-04-16 |
| JP3326545B2 JP3326545B2 (en) | 2002-09-24 |
Family
ID=17001404
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23648394A Expired - Fee Related JP3326545B2 (en) | 1994-09-30 | 1994-09-30 | Semiconductor light emitting device |
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Cited By (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927639A (en) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | Semiconductor device |
| JPH09298313A (en) * | 1996-04-30 | 1997-11-18 | Rohm Co Ltd | Semiconductor light emitting element and manufacture thereof |
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1994
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