JPH0799359B2 - Exhaust gas sensor - Google Patents

Exhaust gas sensor

Info

Publication number
JPH0799359B2
JPH0799359B2 JP61230292A JP23029286A JPH0799359B2 JP H0799359 B2 JPH0799359 B2 JP H0799359B2 JP 61230292 A JP61230292 A JP 61230292A JP 23029286 A JP23029286 A JP 23029286A JP H0799359 B2 JPH0799359 B2 JP H0799359B2
Authority
JP
Japan
Prior art keywords
detection piece
sprayed film
exhaust gas
cavity
gas detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61230292A
Other languages
Japanese (ja)
Other versions
JPS6383649A (en
Inventor
和文 平田
克広 横溝
一夫 翁長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Figaro Engineering Inc
Mazda Motor Corp
Original Assignee
Figaro Engineering Inc
Mazda Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Figaro Engineering Inc, Mazda Motor Corp filed Critical Figaro Engineering Inc
Priority to JP61230292A priority Critical patent/JPH0799359B2/en
Publication of JPS6383649A publication Critical patent/JPS6383649A/en
Publication of JPH0799359B2 publication Critical patent/JPH0799359B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [発明の利用分野] この発明は、金属酸化物半導体の抵抗値の変化を利用し
た排気ガスセンサの改良に関し、特に半導体の基体から
の脱落の防止と、電極の保護とに関する。
Description: FIELD OF THE INVENTION The present invention relates to an improvement of an exhaust gas sensor utilizing a change in resistance value of a metal oxide semiconductor, and more particularly, prevention of dropping of a semiconductor from a substrate and protection of electrodes. Regarding

[従来技術] 耐熱絶縁性基体に設けたキャビテjに、金属酸化物半導
体からなるガス検知片を収容した、排気ガスセンサが知
られている(例えば特開昭57−3037号)。発明者らはこ
のセンサに付いて検討し、以下の問題に直面した。
[Prior Art] An exhaust gas sensor is known in which a gas detecting piece made of a metal oxide semiconductor is housed in a cavity j provided on a heat-resistant insulating substrate (for example, JP-A-57-3037). The inventors have examined this sensor and faced the following problems.

第1に、検知片をキャビテイに保持することが、困難で
ある。検知片とキャビテイとの密着強度を増すため、キ
ャビテイに半導体を充てんして焼結しても、焼結時の収
縮のため検知片はキャビテイから遊離してしまう。半導
体をプレス等によりキャビテイと別に成型すると、この
問題はさらに著しくなる。ここで無機セメント等により
検知片を固着することは可能であるが、セメントを用い
るとセンサ特性が劣化する。
First, it is difficult to hold the detection piece in the cavity. In order to increase the adhesion strength between the detection piece and the cavity, even if the cavity is filled with a semiconductor and sintered, the detection piece is separated from the cavity due to contraction during sintering. If the semiconductor is molded separately from the cavities by a press or the like, this problem becomes more serious. Although it is possible to fix the detection piece with inorganic cement or the like, the use of cement deteriorates the sensor characteristics.

第2に、電極の保護が難しい。電極は振動等の外力に対
しても、また排気ガス中の固体粒子等による研削に対し
ても、保護を行う必要がある。さらに排気ガスとの接触
を制限し、化学的腐蝕に対しても保護する必要がある。
ここでアルミナ等の薄層をラミネートし、電極を保護す
ることは可能である。しかし精度良くラミネートするこ
とは難しいし、ラミネート膜の焼結温度は一般に高く、
センサ特性に影響を与える。
Second, it is difficult to protect the electrodes. It is necessary to protect the electrodes against external force such as vibration and also against grinding due to solid particles in exhaust gas. Furthermore, it is necessary to limit contact with exhaust gases and to protect against chemical corrosion.
Here, it is possible to laminate a thin layer of alumina or the like to protect the electrode. However, it is difficult to accurately laminate, and the sintering temperature of the laminated film is generally high.
Affects sensor characteristics.

[発明の課題] この発明は、検知片のキャビテイへの保持強度を高め、
かつ電極に対して充分な保護を与え、さらに検知片の応
答性能の低下を防止することを課題とする。
[Problem of the Invention] This invention enhances the holding strength of the detection piece to the cavity,
In addition, it is an object to provide sufficient protection to the electrodes and prevent deterioration of the response performance of the detection piece.

[発明の構成] この発明の排気ガスセンサは、耐熱絶縁性基体に設けた
キャビテイに、ガスにより抵抗値が変化する金属酸化物
半導体に少なくとも一対の電極を接続したガス検知片の
周囲の電極の露出部とガス検知片の縁の少なくとも一部
を溶射膜により被覆して保護し、かつキャビティの表面
側の面でガス検知片の表面が溶射膜で被覆されずに露出
する割合を60%以上としたことを特徴とする。
[Structure of the Invention] The exhaust gas sensor of the present invention has a cavity provided on a heat-resistant insulating substrate, in which at least a pair of electrodes are connected to a metal oxide semiconductor whose resistance value changes depending on gas, and the electrodes around the gas detection piece are exposed And at least a part of the edge of the gas detection piece is covered with a sprayed film to protect it, and the surface of the cavity on the surface of the gas detection piece is not covered with the sprayed film and is exposed at a rate of 60% or more. It is characterized by having done.

溶射膜は緻密質、あるいは多孔質のいずれをも用いるこ
とができ、検知片の脱落を防止すると共に、電極を機械
的に保護しかつ電極への排気ガスの影響を緩和する。
The sprayed film can be either dense or porous, which prevents the detection piece from falling off, protects the electrode mechanically, and reduces the effect of exhaust gas on the electrode.

[実施例] 第1図(a)に溶射前の排気ガスセンサを、(b)、
(c)、(d)に溶射後の排気ガスセンサを示す。図に
おいて、(2)はアルミナ等の耐熱絶縁性基板であり、
その先端には例えば直方体状のくぼみからなる2つのキ
ャビティ(4),(6)を設ける。キャビテイ(4)に
は、例えばn形の金属酸化物半導体、BaSnO3、TiO2、Sn
O2等をプレス成型後に焼結したn形ガス検知片(8)を
収容する。同様にキャビテイ(6)には、p形の金属酸
化物半導体、SrTiO3、SrFeO3oLaCoO3等を成型し焼結し
たp形ガス検知片(10)を収容する。検知片(8),
(10)はプレス成型によらず、キャビテイに充てんして
焼結しても良い。検知片(8),(10)に各1対の線状
電極(12)を接続し、基板(2)に設けた溝(14)に収
容する。(16)は電極(12)に接続した外部リード、
(18)はヒータ(20)に接続した外部リードである。
[Example] Fig. 1 (a) shows an exhaust gas sensor before thermal spraying,
The exhaust gas sensor after thermal spraying is shown in (c) and (d). In the figure, (2) is a heat-resistant insulating substrate such as alumina,
Two cavities (4) and (6) each having a rectangular parallelepiped recess are provided at the tip of the cavity. The cavities (4) include, for example, n-type metal oxide semiconductors, BaSnO 3 , TiO 2 , Sn.
The n-type gas detection piece (8) obtained by press-molding O 2 or the like is housed. Similarly, the cavity (6) contains a p-type gas detection piece (10) obtained by molding and sintering a p-type metal oxide semiconductor, SrTiO 3 , SrFeO 3o LaCoO 3, or the like. Detection piece (8),
(10) may be filled with cavities and sintered without using press molding. A pair of linear electrodes (12) are connected to the detection pieces (8) and (10) and are housed in the groove (14) provided in the substrate (2). (16) is an external lead connected to the electrode (12),
(18) is an external lead connected to the heater (20).

基板(2)の上から、適当なマスクを介して溶射膜(2
2)を設ける。マスクの形状は、例えば第3図(a)に
示すように検知片(8)の4周から一定の幅Dだけせり
出したもの、あるいは第3図(b)に示すように両側か
ら幅Dだけせり出したもの、等を用いる。検知片
(8),(10)への溶射膜(22)の開口部を(24),
(26)として示す。
From above the substrate (2) through a suitable mask, the sprayed film (2
2) is provided. The shape of the mask is, for example, as shown in FIG. 3 (a), protruding from the detection piece (8) four times by a constant width D, or as shown in FIG. 3 (b), only the width D from both sides. Use the one that sticks out. Open the openings of the sprayed film (22) to the detection pieces (8) and (10) by (24),
Shown as (26).

溶射膜(22)は多孔質、あるいは緻密度のいずれを用い
ても良く、ここでは30μ厚のAl2O3やTiO2を用いた多孔
質膜と、80μ厚のMg−Al2O4を用いた緻密質膜の両者を
用いた。なお溶射条件は、緻密質膜の場合で容射電流50
0A、溶射粉末の平均粒径30μであった。また多孔質膜を
用いる場合、溶射膜に酸化接触を担持させても良い。
The sprayed film (22) may be either porous or dense. Here, a porous film using 30 μm thick Al 2 O 3 or TiO 2 and 80 μm thick Mg-Al 2 O 4 are used. Both of the dense membranes used were used. The spraying condition is 50 for the dense film.
The average particle diameter of the sprayed powder was 0 μA, which was 30 μm. When a porous film is used, the sprayed film may carry an oxidative contact.

検知片(8),(10)は、溶射膜(22)によりキャビテ
イに保持される。溶射膜(22)による保持強度は高く、
実験によれば2.2×2.0mmの表面の検知片に対し、両側か
ら0.1mmずつ膜(22)を張り出したものでも、充分に検
知片を保持できた。従って張り出し部Dは極くわずかで
良い。
The detection pieces (8) and (10) are held in the cavity by the sprayed film (22). The retention strength of the sprayed film (22) is high,
According to the experiment, even if the film (22) is overhanging by 0.1 mm from both sides of the detection piece on the surface of 2.2 × 2.0 mm, the detection piece could be held sufficiently. Therefore, the overhang D may be very small.

次に、センサの応答特性のためには、検知片(8),
(10)の一部にのみ溶射を施すのが良い。応答特性への
影響は主として、開口部(24),(26)の面積と、検知
片(8),(10)面積の比、即ち開口率で定まり、緻密
質の割合この比を60%以上、より好ましくは60〜90%と
する。多孔質の場合も、開口部からのガスの拡散につい
ては、緻密質の場合と同様であり、好ましくは開口部の
面積を検知片の面積の60%以上、より好ましくは60〜90
%とする。線状電極を用いる場合、電極キャビティに連
通した溝に収容し、キャビティの周囲の溝と検知片の縁
の少なくとも一部に溶射する。この場合も開口率は60%
以上とする。溝を設けると、溶射膜が溝に蓋をするよう
に溶射され、電極線には直接溶射されず、溶射時の電極
線の断線を防止できる。またキャビティとは基本に設け
たくぼみを意味する。なお溶射膜(22)は、2つの検知
片(8),(10)の温度を均一化する作用をも持つ。
Next, for the response characteristics of the sensor, the detection piece (8),
It is better to apply thermal spray to only part of (10). The influence on the response characteristics is mainly determined by the ratio of the area of the openings (24) and (26) to the area of the detection pieces (8) and (10), that is, the opening ratio, and the ratio of the dense substance is 60% or more. , And more preferably 60 to 90%. Also in the case of porous, the diffusion of gas from the opening is the same as in the case of dense material, preferably the area of the opening is 60% or more of the area of the detection piece, more preferably 60 to 90.
%. When a linear electrode is used, it is housed in a groove communicating with the electrode cavity, and is sprayed onto the groove around the cavity and at least a part of the edge of the detection piece. Even in this case, the aperture ratio is 60%
That is all. When the groove is provided, the sprayed film is sprayed so as to cover the groove and is not directly sprayed on the electrode wire, so that the disconnection of the electrode wire at the time of spraying can be prevented. The term "cavity" generally means a hollow provided in the cavity. The sprayed film (22) also has the function of equalizing the temperatures of the two detection pieces (8) and (10).

電極線(12)は、溶射時の断線を防止するため、溝(1
4)に収容して溶射するのが好ましい。溝を設けない
と、電極線が基板(2)から遊離し、溶射に伴う熱のた
め、その部分で断線する。これに対し溝に収容すると、
電極線には直接溶射されず、溝に蓋をする形で溶射が進
み、断線は生じない。溶射後の電極部の配置を、第1図
(d)に示す。
The electrode wire (12) has a groove (1) to prevent disconnection during spraying.
It is preferable to store in 4) and spray. If the groove is not provided, the electrode wire is separated from the substrate (2) and the wire is disconnected at that portion due to the heat generated by the thermal spraying. On the other hand, when housed in the groove,
The electrode wire is not sprayed directly, but the spraying progresses in the form of covering the groove, and the disconnection does not occur. The arrangement of the electrode parts after thermal spraying is shown in FIG. 1 (d).

なおこの実施例では基板(2)の全体に溶射を施した
が、検知片(8),(10)とその周囲の電極の露出部に
施せば良く、全体に施す必要はない。例えば基板(2)
の基部は、通常他のハウジングにより別に保護されてい
るし、加熱温度も低いためである。さらに電極(12)は
検知片(8),(10)への接続部付近のみを線状電極と
し、他は膜状の電極としても良い。
In this embodiment, thermal spraying is applied to the entire substrate (2), but it may be applied to the exposed portions of the detection pieces (8) and (10) and the electrodes around them, and need not be applied to the entire surface. Substrate (2)
This is because the base of (1) is usually protected by another housing and the heating temperature is low. Further, the electrode (12) may be a linear electrode only in the vicinity of the connection to the detection pieces (8) and (10), and the other may be a film-shaped electrode.

第2図に、膜状の電極(102)を用いた実施例を示す。
(a)に溶射前の構造を、(b)、(c)に溶射後の構
造を示す。検知片(8),(10)をキャビテイ(4),
(6)に収容した後、印刷や蒸着等により、PtやPt−Rh
等の貴金属の膜状電極(102)を設ける。次いで溶射膜
(22)を設けて、検知片と電極とを保護する。この場合
も、溶射は全面に施す必要はなく、検知片とその付近の
電極に施せば良いことはかわらない。
FIG. 2 shows an embodiment using a film-shaped electrode (102).
The structure before thermal spraying is shown in (a), and the structure after thermal spraying is shown in (b) and (c). Cavity (4), the detection piece (8), (10)
After storing in (6), Pt or Pt-Rh can be applied by printing or vapor deposition.
Noble metal film electrodes (102) are provided. Next, a sprayed film (22) is provided to protect the detection piece and the electrode. Also in this case, the thermal spraying does not have to be applied to the entire surface, and it is sufficient to apply it to the detection piece and the electrode in the vicinity thereof.

このセンサを自動車エンジンやボイラー等からの排気管
に接続し、排気ガスとヒータ(20)とにより、センサを
加熱する。n形ガス検知片(8)とp形ガス検知片(1
0)との抵抗値の積はセンサの温度に対応し、抵抗値の
比は排気ガスの空燃比に対応する。
The sensor is connected to an exhaust pipe from an automobile engine, a boiler or the like, and the sensor is heated by the exhaust gas and the heater (20). n-type gas detection piece (8) and p-type gas detection piece (1
The product of the resistance value and 0) corresponds to the temperature of the sensor, and the resistance value ratio corresponds to the air-fuel ratio of the exhaust gas.

ここで各検知片の大きさを、電極に平行方向で2.2mm、
直角方向で2mm、深さで0.5mmとし、振動等の外力への耐
久性を調べた。センサに加熱度30G、振動数230Hzの振動
を5時間加え、振動テストを行う。これは自動車用電装
部品に対する標準的テスト条件である。溶射を施さない
ものでは、セメントで検知片を固定しない限り、全て検
知片が脱落した。溶射を施したものでは、厚さ30μの多
孔質膜を検知片の両側から0.1mmずつせり出したもので
すら、異常は生じなかった。
Here, the size of each sensing piece is 2.2 mm in the direction parallel to the electrode,
The durability against external force such as vibration was examined by setting the vertical direction to 2 mm and the depth to 0.5 mm. A vibration test is performed by applying vibration with a heating degree of 30 G and a frequency of 230 Hz to the sensor for 5 hours. This is a standard test condition for automotive electrical components. In the case of no thermal spraying, all the detection pieces fell off unless the detection piece was fixed with cement. In the case of thermal spraying, no abnormality occurred even if the porous film having a thickness of 30 μ was protruded by 0.1 mm from both sides of the detection piece.

次に電極(12)や(102)は溶射膜(22)により保護さ
れ、基板(2)からの剥離や飛び出しが防止される。ま
た排気ガス中の固体粒子による研削も、同様に溶射膜
(22)で防がれる。電極に対する科学的腐蝕は、以下の
ようにして防がれる。第1に溶射膜(22)のため、排気
ガスの影響が緩和される。第2に、腐蝕の要因は主とし
て排気ガス中のカーボンであり、このカーボンは溶射膜
(22)に析出し、電極には達しない。
Next, the electrodes (12) and (102) are protected by the sprayed film (22) to prevent peeling or jumping out from the substrate (2). Grinding with solid particles in the exhaust gas is also prevented by the sprayed film (22). Scientific corrosion to the electrodes is prevented as follows. First, the sprayed film (22) reduces the influence of exhaust gas. Secondly, the cause of corrosion is mainly carbon in the exhaust gas, and this carbon is deposited on the sprayed film (22) and does not reach the electrode.

開口部(24),(26)の面積と、センサの応答特性との
関係を調べた。センサをブリッジ回路に組み込み、900
℃に加熱して、雰囲気を当量比λが0.98と1.02との間で
切り替える。第4図(a)に還元側から酸化側への応答
を、(b)に酸化側から還元側への応答を示す。センサ
は第1図のもので、溶射マスクは第3図(a)の4方か
らせり出すものである。せり出し部の幅をDとして表示
し、センサ出力はブリッジ出力を現す。
The relationship between the area of the openings (24) and (26) and the response characteristics of the sensor was investigated. The sensor is built into the bridge circuit,
Heat to ℃ and switch the atmosphere between equivalence ratios λ between 0.98 and 1.02. FIG. 4 (a) shows the response from the reducing side to the oxidizing side, and FIG. 4 (b) shows the response from the oxidizing side to the reducing side. The sensor is the one shown in FIG. 1, and the thermal spray mask is one protruding from the four sides in FIG. 3 (a). The width of the protruding portion is displayed as D, and the sensor output shows a bridge output.

酸化側から還元側への応答への、溶射膜の影響は小さい
(第4図(b))。しかし還元側から酸化側の応答への
影響は大きい(第4図(a))。幅Dが0.1mmでは溶射
の影響はほとんどなく、応答は溶射前のものと等しい。
0.2mmではやや応答が遅れている。0.3mmでは応答遅れは
かなり大きい。
The influence of the sprayed film on the response from the oxidation side to the reduction side is small (Fig. 4 (b)). However, there is a large effect on the response from the reducing side to the oxidizing side (Fig. 4 (a)). When the width D is 0.1 mm, there is almost no influence of thermal spraying, and the response is equal to that before spraying.
At 0.2 mm, the response is slightly delayed. At 0.3 mm, the response delay is quite large.

表1〜3に、還元側から酸化側への応答に付いて、溶射
する応答遅れを示す。実験条件は第4図(a)と同じ
で、Dは溶射膜のせり出し部の幅を現し、S1/S2は開口
部(24),(26)と検知片(8),(10)との面積の比
を現す。応答の遅れとして、還元側と酸化側の中間の出
力に到達するまでの時間への溶射の影響を示す。表1に
第3図(a)のマスクパターンで、緻密質の溶射膜を用
いた際の結果を示す。表2にマスクパターンを第3図
(b)のものとし、同じく緻密質の溶射膜を用いた際の
結果を示す。表3には、多孔質の溶射膜で第3図(b)
のマスクでの結果を示す。なお半導体はp形がSrTiO3
n形がBaSnO3である。
Tables 1 to 3 show the response delay of thermal spraying with respect to the response from the reducing side to the oxidizing side. The experimental conditions are the same as in Fig. 4 (a), D is the width of the protruding part of the sprayed film, and S 1 / S 2 are the openings (24), (26) and the detection pieces (8), (10). Represents the area ratio of. As a response delay, the effect of thermal spraying on the time until reaching an intermediate output between the reduction side and the oxidation side is shown. Table 1 shows the results when the dense sprayed film was used in the mask pattern of FIG. 3 (a). Table 2 shows the results when the mask pattern shown in FIG. 3 (b) is used and a dense sprayed film is also used. Table 3 shows a porous sprayed film in FIG. 3 (b).
The result with the mask of is shown. The semiconductor is p-type SrTiO 3 ,
The n-type is BaSnO 3 .

表 1 (緻密質1) 幅D(mm) S1/S2(%) 応答遅れ(秒) 0.1 82 … 0.2 65 0.1 0.3 50 0.7 0.5 27 〜2 表 2 (緻密質2) 幅D(mm) S1/S2(%) 応答遅れ(秒) 0.1 90 … 0.35 70 0.1 0.5 55 0.7 0.7 36 1.5 表 3 (多孔質) 幅D(mm) S1/S2(%) 応答遅れ(秒) 0.2 82 … 0.4 65 0.1 0.5 55 0.3 全体 0 0.6 開口部(24),(26)と検知片(8),(10)との面積
比を0.6以上とすれば、溶射の影響を著しく小さくでき
る。
Table 1 (Denseness 1) Width D (mm) S 1 / S 2 (%) Response delay (sec) 0.1 82… 0.2 65 0.1 0.3 50 0.7 0.5 27 to 2 Table 2 (Denseness 2) Width D (mm) S 1 / S 2 (%) Response delay (sec) 0.1 90… 0.35 70 0.1 0.5 55 0.7 0.7 36 1.5 Table 3 (Porous) width D (mm) S 1 / S 2 (%) Response delay (sec) 0.2 82… 0.4 65 0.1 0.5 55 0.3 Overall 0 0.6 If the area ratio between the openings (24), (26) and the detection pieces (8), (10) is 0.6 or more, the effect of thermal spraying can be significantly reduced.

なおこれらの実施例では、p形ガス検知片とn形ガス検
知片とのペアを用いたが、p形ガス検知片のみ、あるい
はn形ガス検知片のみとしても良いことはいうまでもな
い。また同種の半導体を組み合わせて、その一方を緻密
質の溶射膜で完全に覆い、サーミスタとして用いても良
い。さらにセンサの形状は自由に変形でき、例えば基体
を角柱状とし、その先端にキャビテイを設けて検知片を
収容するようにしても良い。
In these examples, the pair of the p-type gas detection piece and the n-type gas detection piece was used, but it goes without saying that only the p-type gas detection piece or only the n-type gas detection piece may be used. Alternatively, semiconductors of the same kind may be combined and one of them may be completely covered with a dense sprayed film to be used as a thermistor. Further, the shape of the sensor can be freely changed. For example, the base may be formed into a prismatic shape, and the tip thereof may be provided with a cavity to accommodate the detection piece.

[発明の効果] この発明では、検知片の基体からの遊離を防止できると
ともに、電極の保護を図ることができ、さらに溶射に伴
う応答性能の低下を最小限にとどめることができる。
[Advantages of the Invention] According to the present invention, the detection piece can be prevented from being detached from the substrate, the electrode can be protected, and the deterioration of the response performance due to thermal spraying can be minimized.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)、(b)、(c)、(d)はそれぞれ第1
の実施例を現し、第1図(a)は溶射前の排気ガスセン
サの平面図、第1図(b)は溶射後の排気ガスセンサの
平面図、第1図(c)は第1図(b)のc−c方向拡大
断面図である。第1図(d)は第1図(b)のd−d方
向拡大断面図である。 第2図(a)、(b)、(c)はそれぞれ第2の実施例
を現し、第2図(a)は溶射前の排気ガスセンサの平面
図、第2図(b)は溶射後の排気ガスセンサの平面図、
第2図(c)は第2図(b)のc−c方向拡大断面図で
ある。 第3図(a)、(b)はそれぞれ実施例で用いるマスク
パターンを現す平面図、第4図(a)、(b)はそれぞ
れ実施例の特性図である。 図において、(2)基板、(4),(6)キャビテイ、
(8),(10)ガス検知片、(12),(102)電極、(2
2)溶射膜、(24),(26)開口部。
1 (a), (b), (c) and (d) are respectively the first
FIG. 1 (a) is a plan view of the exhaust gas sensor before thermal spraying, FIG. 1 (b) is a plan view of the exhaust gas sensor after thermal spraying, and FIG. 1 (c) is FIG. 1 (b). It is a cc direction enlarged sectional view of FIG. FIG. 1 (d) is an enlarged sectional view in the d-d direction of FIG. 1 (b). FIGS. 2 (a), (b), and (c) show the second embodiment, respectively. FIG. 2 (a) is a plan view of the exhaust gas sensor before thermal spraying, and FIG. 2 (b) is after thermal spraying. Plan view of the exhaust gas sensor,
FIG. 2 (c) is an enlarged cross-sectional view in the c-c direction of FIG. 2 (b). 3A and 3B are plan views showing mask patterns used in the embodiments, and FIGS. 4A and 4B are characteristic diagrams of the embodiments. In the figure, (2) substrate, (4), (6) cavities,
(8), (10) gas detection piece, (12), (102) electrode, (2
2) Sprayed film, (24), (26) openings.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 翁長 一夫 大阪府箕面市船場西1丁目5番3号 フィ ガロ技研株式会社内 (56)参考文献 特開 昭57−3037(JP,A) 特開 昭55−18922(JP,A) 特開 昭59−27253(JP,A) 特開 昭61−10756(JP,A) 特公 昭58−26546(JP,B2) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Onaga 1-5-3 Senba Nishi, Minoh City, Osaka Prefecture Figaro Giken Co., Ltd. (56) Reference JP-A-57-3037 (JP, A) JP-A-55-18922 (JP, A) JP-A-59-27253 (JP, A) JP-A-61-10756 (JP, A) JP-B-58-26546 (JP, B2)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】耐熱絶縁性基体に設けたキャビテイに、ガ
スにより抵抗値が変化する金属酸化物半導体に少なくと
も一対の電極を接続したガス検知片を収容すると共に、
前記ガス検知片の周囲の電極の露出部とガス検知片の縁
の少なくとも一部を溶射膜により被覆して保護し、かつ
前記キャビティの表面側の面でガス検知片の表面が溶射
膜で被覆されずに露出する割合を60%以上としたことを
特徴とする、排気ガスセンサ。
1. A cavity provided on a heat-resistant insulating substrate contains a gas detection piece in which at least a pair of electrodes are connected to a metal oxide semiconductor whose resistance value changes with gas, and
The exposed portion of the electrode around the gas detection piece and at least a part of the edge of the gas detection piece are covered and protected by a sprayed film, and the surface of the gas detection piece is covered with a sprayed film on the surface of the cavity side. Exhaust gas sensor characterized in that the exposure rate without being exposed is 60% or more.
【請求項2】前記のガス検知片の表面が溶射膜で被覆さ
れずに露出する割合を60〜90%としたことを特徴とす
る、特許請求の範囲第1項記載の排気ガスセンサ。
2. The exhaust gas sensor according to claim 1, wherein a ratio of the surface of the gas detection piece exposed without being covered with the sprayed film is 60 to 90%.
【請求項3】前記一対の電極を一対の線状電極として、
各々前記キャビティに連通する溝に収容し、前記溶射膜
でキャビティの付近の溝とガス検知片の縁の少なくとも
一部を被覆したことを特徴とする、特許請求の範囲第1
項記載の排気ガスセンサ。
3. The pair of electrodes as a pair of linear electrodes,
A groove which communicates with each of the cavities, and each of the grooves near the cavity and at least a part of an edge of the gas detection piece are covered with the sprayed film, and the sprayed film covers the groove.
Exhaust gas sensor according to item.
JP61230292A 1986-09-29 1986-09-29 Exhaust gas sensor Expired - Fee Related JPH0799359B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61230292A JPH0799359B2 (en) 1986-09-29 1986-09-29 Exhaust gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61230292A JPH0799359B2 (en) 1986-09-29 1986-09-29 Exhaust gas sensor

Publications (2)

Publication Number Publication Date
JPS6383649A JPS6383649A (en) 1988-04-14
JPH0799359B2 true JPH0799359B2 (en) 1995-10-25

Family

ID=16905529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61230292A Expired - Fee Related JPH0799359B2 (en) 1986-09-29 1986-09-29 Exhaust gas sensor

Country Status (1)

Country Link
JP (1) JPH0799359B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967589A (en) * 1987-12-23 1990-11-06 Ricoh Company, Ltd. Gas detecting device
JPH02114165A (en) * 1988-10-24 1990-04-26 Figaro Eng Inc Manufacture of exhaust gas sensor
JP4203986B2 (en) * 2003-01-14 2009-01-07 パナソニック株式会社 Gas sensor component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518922A (en) * 1978-07-26 1980-02-09 Fuji Electric Co Ltd Oxygen sensor
JPS573037A (en) * 1980-06-07 1982-01-08 Matsushita Electric Ind Co Ltd Atmosphere detecting element
DE3130595A1 (en) * 1981-08-01 1983-02-17 Robert Bosch Gmbh, 7000 Stuttgart Slipring arrangement
JPS5927253A (en) * 1982-08-06 1984-02-13 Shinei Kk Gas sensor
JPS6110756A (en) * 1984-06-25 1986-01-18 Shinei Kk Gas sensor and manufacture thereof

Also Published As

Publication number Publication date
JPS6383649A (en) 1988-04-14

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