JPH0798821A - Production of magneto-resistance effect type thin-film magnetic head - Google Patents

Abstract

PURPOSE:To greatly improve magnetic characteristics by preventing useless leakage magnetic fields, uniformly and efficiently generating magnetic fields and decreasing Barkhauzen noise, etc., and to make the production process simpler than heretofore. CONSTITUTION:A lower layer shielding magnetic material 2 is formed via an insulating layer 12 on a nonmagnetic substrate 11. A groove is formed on the surface of this lower layer shielding magnetic material 2 and a first layer film 13 which is a nonmagnetic metallic film or insulating film for forming a first reproducing gap is laminated on this groove. A second layer film 14 which is a hard film for biasing for impressing a bias magnetic field to the MR element 1 is laminated on an MR element 1. A lower layer gap insulating layer is thereafter formed on this hard film 14 for biasing and the MR element 1 is formed on this lower layer gap insulating layer. Further, an interlayer insulating layer 16 is formed thereon and an upper layer shielding magnetic material 3 is laminated thereon, by which the MR thin film head is constituted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a magnetoresistive effect thin film whose resistivity changes according to a recording magnetic field from a magnetic recording medium, and detects a change in resistance of the magnetoresistive effect thin film as a reproduction output voltage. -Type thin film magnetic head and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, as hard disk devices have been made smaller and have larger capacities, particularly in applications where application to portable computers such as notebook computers is considered, for example, 2.5 inch hard disk devices. The demand for is increasing.

In such a small hard disk, the medium speed becomes slow depending on the disk diameter, so that in the conventional induction type magnetic head in which the reproducing output depends on the medium speed, the reproducing output is lowered and the increase of the capacity is hindered. Has become.

However, a magnetoresistive effect type magnetic head which detects a change in resistance of a magnetoresistive effect element (hereinafter, simply referred to as an MR element) whose resistivity changes according to a magnetic field as a reproduction output voltage has a reproduction output at a medium speed. Since it has the characteristic that high playback output can be obtained even at a low medium speed,
It is attracting attention as a magnetic head that realizes a large capacity in a small hard disk.

Conventionally, in order to realize the above-mentioned MR head as a magnetic head of a hard disk device, a thin film magnetoresistive effect element (hereinafter, simply referred to as an MR element) is provided on a slider material and a lower part is used as a magnetic path during reproduction. Magneto-resistive effect thin film magnetic head having a structure in which a shield core and an upper shield core are sandwiched (hereinafter simply referred to as MR thin film head)
To form.

Taking a vertical MR thin film head as an example, as shown in FIG. 15, a non-magnetic substrate 101 is used.
The soft magnetic film to be the lower shield magnetic body 103 and the lower gap insulating layer 104 are sequentially laminated on the upper side of the insulating layer 102, and the MR element 10 is formed on the lower gap insulating layer 104.
5 is formed so that its longitudinal direction is perpendicular to the surface (head surface a) facing the magnetic recording medium, and one end surface of the magnetic disk 5 is exposed to the head surface a.
A front end electrode 106a and a rear end electrode 106b for providing a sense current are formed at both ends of the R element 105.

After that, the insulating layer 107 is formed on the entire surface including the MR element 105, the front end electrode 106a, and the rear end electrode 106b.
Is laminated, a bias hard film 108 is formed so as to cross the lower MR element 105 in the longitudinal direction, and thereafter,
By sequentially stacking an interlayer insulating film and a soft magnetic film to be the upper shield magnetic body 109 on the entire surface, the conventional MR
A thin film head is constructed.

The conventional MR thin film head is based on the MR element 1
Since 05 is sandwiched between the upper shield magnetic body 110 and the lower shield magnetic body 103, the recording density dependence of the reproduction output can be improved as compared with the case without the upper shield magnetic body 109 and the lower shield magnetic body 103. .

[0009]

However, in the conventional MR thin film head described above, the bias hard film 108 is formed as shown in the drawing in order to form the bias hard film 108 after the MR element 105 is formed as described above in the process of forming the MR thin film head. A step is formed at both ends of the hard film for use 108. Therefore, a leakage magnetic field is generated at both ends, and the magnetic field cannot be uniformly generated in the bias hard film 108.

In addition, the bias hard film 108
At both ends of the bias hard film 108, the magnetic poles of the bias hard film 108 overlap the front end electrode 106a and the rear end electrode 106b. Therefore, the distance t between the bias hard film 108 and the MR element is equal to the thickness of the electrodes 106a and 106b. There is a problem in that the magnetic field is increased and the magnetic field cannot be efficiently generated in the bias hard film 108.

Further, there are many processes up to formation of the upper shield magnetic material 109, and therefore the upper shield magnetic material 1 is formed.
09 has a step or the like especially at its tip, and its shape becomes complicated. As a result, a domain wall is generated at that portion, which causes Barkhausen noise, popcorn noise, and the like. At present, it is very difficult to avoid such problems in magnetic properties.

Similarly, there are many processes before and after the formation of the bias hard film 108, which causes dielectric breakdown or the like in the vicinity of steps formed at both ends of the bias hard film 108. In order to prevent this, it is required that the insulating film has a thickness that allows sufficient insulation between conductors. However, if the thickness of the insulating film to be formed is increased, when the flatness of the surface is observed, a different layer is formed. There is a problem that a larger step is formed on the connection window between the conductors, and the reproduction output S / N of the MR thin film head is lowered.

At present, since the highest priority is to eliminate this fatal defect of the magnetic head, which is called dielectric breakdown, the deterioration of the reproduction output S / N is not taken into consideration, and the thickness of the insulating film is increased. The current situation is to prevent insulation failure.

An experimental example of the relationship between the output of the MR thin film head and the depth length d will be shown below. In this experimental example, a 3.5-inch hard disk drive was used, and the peripheral speed was 9.4 m / s, the track width was 5 μm, and the gap width was 0.3.
It was carried out under various conditions of 5 μm and flying height of 0.16 μm.

From this experimental example, as shown in FIG. 16, it can be seen that the output of the MR thin film head decreases substantially linearly as the depth length d increases. In the conventional MR thin film head, the distance a between the shield groove and the bias magnetic pole is set to 0.5 μm or less due to the necessity of thickening the interlayer insulating layer to avoid dielectric breakdown as described above and the limit of patterning accuracy. It is impossible to improve the MR output, because the reduction of the depth length d is also limited.

The present invention has been made in view of the above-mentioned various problems, and an object of the present invention is to prevent useless leakage magnetic field and generate a magnetic field uniformly and efficiently. To provide a magnetoresistive thin-film magnetic head and a manufacturing method thereof capable of significantly improving magnetic characteristics by reducing noise and the like, and further simplifying a manufacturing process as compared with a conventional one. It is in.

[0017]

According to the present invention, there is provided a magnetoresistive device comprising a magnetoresistive element and a biasing magnetic film disposed between a lower shield magnetic body and an upper shield magnetic body which are laminated on a substrate so as to face each other. In the effect type thin film magnetic head, the bias magnetic film (second layer film) is embedded in the groove formed in the lower shield magnetic body through an insulating layer or a non-magnetic metal layer (first layer film) A magnetoresistive effect element is formed via an insulating layer.

In this case, the first layer film may include a coating film formed by applying a silicon oxide coating material and then heating and curing the coating material.

Further, in this case, the thickness of the coating film formed by heating and curing after coating the silicon oxide coating material may be less than 150 nm.

[0020]

In the magnetoresistive thin film magnetic head and the method for manufacturing the same according to the present invention, the magnetoresistive element (hereinafter,
Since the bias magnetic film (hard bias film) is formed below the MR element), a step may be formed at both ends of the bias hard film in the vicinity of the front and rear electrodes as in the conventional case. Absent. Therefore, both ends of the bias hard film can be brought close to the MR element, and a bias magnetic field can be efficiently applied to the MR element.

Further, since the step is not formed at both ends of the bias hard film, the upper shield magnetic body can be formed in a simple shape by reducing the step at the tip thereof. It becomes difficult to form magnetic domains in the part. As a result, it is possible to suppress the generation of Bark Heisen noise, and it is possible to improve the S / N of the reproduction output.

After coating the insulating film or the non-magnetic metal layer (first layer film) interposed between the lower shield magnetic body and the bias hard film (second layer film) with a silicon oxide coating material. Since the coating film formed by heat curing is included, at the stage of applying the silicon oxide coating material,
Due to the liquid pool effect, the step in the wiring part or the connection window part between the different-layer conductors becomes gentle as compared with the case where the first layer film is formed by the sputtering method or the vapor deposition method. As a result, the second layer film can inevitably be formed in a gentle shape.

In this case, the heat dissipation of the magnetoresistive effect element 1 can be improved by setting the film thickness of the film to less than 150 μm.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of a magnetoresistive thin film magnetic head and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

First, the magnetoresistance effect type thin film magnetic head (hereinafter simply referred to as MR thin film head) according to the first embodiment is
As shown in FIG. 1, a magnetoresistive effect element (hereinafter, simply referred to as MR
An element) 1 is sandwiched between a lower shield magnetic body 2 and a lower shield magnetic body 3 which serve as a magnetic path during reproduction.

Specifically, first, the lower shield magnetic body 2 made of a magnetic film such as Ni--Fe is formed on the non-magnetic substrate 11 with the insulating layer 12 interposed therebetween. A groove is formed on the surface of the lower shield magnetic body 2, and a first non-magnetic metal film or an insulating film is formed in the groove to form a first reproducing gap.
The layer film 13 is laminated. Further, a second layer film 14 which is a bias magnetic film (bias hard film) for applying a bias magnetic field to the MR element 1 is further stacked thereon. Then, the lower gap insulating layer 15 is formed on the bias hard film 14, and the lower gap insulating layer 1 is formed.
An MR element 1 made of, for example, a Fe—Ni film is formed on the MR element 5, and an interlayer insulating layer 16 forming a second reproduction gap is further formed on the MR element 1. Ni—Fe or the like is formed on the interlayer insulating layer 16. The MR shield thin film head according to the first embodiment is constructed by laminating the upper shield magnetic body 3 of the magnetic film.

In the MR thin film head,
The MR element 1 is arranged such that its longitudinal direction is perpendicular to the surface facing the magnetic recording medium, that is, the recording medium sliding surface, and one end face of the MR element 1 is exposed to the recording medium sliding surface. ing. Electrodes (a front end electrode 17a and a rear end electrode 1) made of a soft magnetic film are respectively provided at an end portion of the MR element 1 on the sliding surface side of the recording medium and at a position separated from the front end portion by a predetermined distance.
7b) has been formed.

The front end electrode 17a and the rear end electrode 17b
Are formed for the purpose of flowing a sense current along the longitudinal direction of the MR element 1 (that is, in the direction orthogonal to the sliding surface of the recording medium). In the first embodiment, the front end electrode 17a
Are separately formed, the interlayer insulating layer 16 is formed, and then flattening is performed to expose the upper surface of the front end electrode 17a, and then the upper shield magnetic body 3 is formed. Electrode 17a and upper shield magnetic body 3
And are electrically connected. Therefore, in this case, the second reproducing gap is formed by the front end electrode 17a.

In the MR thin film head,
In the MR element 1, the rear end and the rear end electrode 17b of the front end electrode 17a
The region between the front ends of the MR elements 1 shows the magnetoresistive effect, and this region constitutes the sensing portion of the MR element 1.

As a method of manufacturing the MR thin film head according to the first embodiment, as shown in FIG. 2, first, Al ₂ O _3-
On the non-magnetic substrate 11 made of TiC or the like, the lower shield magnetic body 2 made of a magnetic film such as Ni-Fe is formed through the insulating layer 12 by the dry etching method (lower shield magnetic body forming step S1).

Thereafter, as shown in FIG. 3, substantially U-shaped grooves 21 are formed on the surface of the lower shield magnetic body 2 by a dry etching method (grooving step S2).

Then, as shown in FIG. 4, a first layer film 13 which is a non-magnetic metal film or insulating film made of Cr or the like and a hard bias film made of CoPt are formed on the groove 21. A certain second layer film 14 is continuously sputtered (bias hard film forming step S3).

Next, as shown in FIG. 5, unnecessary portions of the first layer film 13 and the bias hard film 14 in the vicinity of both end surfaces of the lower shield magnetic body 2 are removed by dry etching, and then Al ₂ The lower gap insulating layer 15 made of O ₃ is formed by sputtering to a thickness at which the lower shield magnetic body 2 is sufficiently hidden (embedding step S4).

Then, as shown in FIG.
Using a 2 μm diamond abrasive grain and a copper Kemet surface plate, etc., the diamond abrasive particles are dropped onto the copper Kemet surface plate so as to become familiar with it, and a weight is applied on the diamond abrasive particle to grind it to just above the lower shield magnetic body 2 to roughen it. After (mechanical polishing), drop SiO ₂ abrasive grains on a polyurethane buff cloth to familiarize it, and then apply a weight on it to finely polish the roughly polished portion (buffing) to obtain the lower shield magnetic body 2 Is planarized immediately above (planarization step S5).

Then, as shown in FIG. 7, Al ₂ O ₃ is sputter-deposited on the flattened surface and finely polished to a desired gap thickness by the above-mentioned buffing using SiO ₂ abrasive grains. By performing the application, the lower gap insulating layer 15 is formed (lower gap insulating layer forming step S6).

Then, as shown in FIG.
On the lower gap insulating layer 15 with NiFe / Al ₂ O ₃
After forming the / NiFe film, it is formed by dry etching into the element shape (MR element forming step S7).

Further, as shown in FIG. 9, W, Ti, M
Front end electrode 17a and rear end electrode 17b made of o or the like
Is formed by performing reactive ion etching (RIE) after the sputtering film formation (electrode forming step S
8).

Then, as shown in FIG. 10, Al ₂ O ₃
By forming (/ SiO ₂ ) by sputtering, the interlayer insulating layer 1
6 is formed, SOG (spin-on-glass) described later is applied thereto by spin coating (or dipping, spraying), and heat-cured at a temperature of about 200 to 300 ° C., and then a hole is formed at the tip. Opening is performed (interlayer insulating layer forming step S9).

Then, as shown in FIG. 11, an underlayer made of Ti is formed by sputtering, and then NiFe plating is performed to form the upper shield magnetic body 3 (upper shield magnetic body forming step S10). The MR thin film head according to the first embodiment is completed by passing through the above steps S1 to S10.

In the MR thin film head and the method of manufacturing the same according to the first embodiment, the bias hard film 14 is formed below the MR element 1, so that the front and rear electrodes 17a and 17b are formed in the vicinity of the front and rear electrodes 17a and 17b as in the conventional case. Therefore, no step is formed at both ends of the bias hard film 14. Therefore, both ends of the bias hard film 14 can be brought close to the MR element 1, and the bias magnetic field can be efficiently applied to the MR element 1.

Therefore, it is possible to prevent unnecessary magnetic field leakage that occurs in the vicinity of the step at both ends of the bias hard film, and also to reduce the depth length d by reducing the shield groove / bias magnetic pole distance a. Therefore, the MR output can be significantly improved.

Furthermore, since no step is formed at both ends of the bias hard film 14, the upper shield magnetic material 3 is formed.
Can be made into a simple shape by reducing the step at the tip portion, and it becomes difficult to form a magnetic domain at this step portion. As a result, it is possible to suppress the generation of Bark Heisen noise, and it is possible to improve the S / N of the reproduction output.

Further, the depth of the groove formed on the surface of the lower shield magnetic body 2 can be freely changed.
Since the thicknesses of the layer film 13 and the bias hard film 14 can be freely set, it becomes possible to very easily perform the structural design regarding the bias magnetic field application.

Next, a second embodiment of a magnetoresistive thin film magnetic head and a method of manufacturing the same according to the present invention will be described with reference to the drawings. The same reference numerals are given to those corresponding to FIG.

The second embodiment has substantially the same structure as the first embodiment and is manufactured by the same method as shown in FIG.
As shown in FIG. 2, so-called SOG (spin-on-glass) is applied on the non-magnetic metal film or insulating film laminated in the groove formed on the surface of the lower shield magnetic body 2 to form the coating film 22. As a result, the difference is that the second layer film 14 as the bias hard film is formed gently as shown in the drawing.

That is, in the second embodiment, in the manufacturing process thereof, after the groove digging step S2, as shown in FIG. A film is formed, and the SOG is applied by spin coating (or dipping, spraying), and then 20
The first layer film 13 is formed by thermosetting at a temperature of 0 to 300 ° C. to form the coating film 22. After that, the second layer film 14 that is a bias hard film made of CoPt is formed by sputtering (nonmagnetic film and bias hard film forming step S11).

Here, the SOG is a coating liquid for forming a SiO ₂ (silicon oxide) -based coating film, and in the process of manufacturing various electronic component materials, a coating film containing SiO ₂ as a main component is applied and baked. It is used for the purpose of forming. The composition of this SOG is a silicon compound (RnSi (OH) _4-n ) and an additive (diffusion impurities, glass forming material, organic binder) dissolved in an organic solvent (alcohol main component, ester, ketone). is there.

Then, as shown in FIG. 14, unnecessary portions of the first layer film 13 and the bias hard film 14 in the vicinity of both end surfaces of the lower shield magnetic body 2 are removed by a dry etching method, and further, an island etching ( Since the metal film is easily peeled off due to its softness, it is removed by etching while leaving a minimum necessary amount (before and after the groove portion). Then, the lower gap insulating layer 15 made of Al ₂ O ₃ is formed. , The lower shield magnetic body 2 is sputtered to a thickness enough to hide it (lower gap insulating layer forming step S12). After that, the MR thin film head according to the second embodiment is completed by performing the same steps as the flattening step S5 to the upper shield magnetic material forming step S10.

In consideration of the heat dissipation of the MR element 1, a non-magnetic metal film made of a material having high thermal conductivity (W, Cu, Al, etc.) other than Cr, which is the material of the first layer film 13, is used. You may form a film by sputtering. In this case, the film thickness of the coating film 22 is 1
It is desirable that the thickness is less than 50 μm.

In the MR thin film head and the method of manufacturing the same according to the second embodiment, as in the first embodiment, M
Since the bias hard film 14 is formed below the R element 1, no step is formed at both ends of the bias hard film 14 in the vicinity of the front and rear electrodes 17a and 17b as in the conventional case. Therefore, both ends of the bias hard film 14 can be brought close to the MR element 1, and the bias magnetic field can be efficiently applied to the MR element 1.

Therefore, it is possible to prevent unnecessary magnetic field leakage that occurs in the vicinity of the step on both ends of the bias hard film, and also to reduce the depth length d by reducing the shield groove / bias magnetic pole distance a. Therefore, the MR output can be significantly improved.

Further, as in the first embodiment, since the step is not formed at both ends of the bias hard film 14, the upper shield magnetic body 3 is simplified by reducing the step at its tip. It can be formed into a shape, and it becomes difficult to form a magnetic domain in this step portion. As a result, it is possible to suppress the generation of Bark Heisen noise, and it is possible to improve the S / N of the reproduction output.

Further, as in the first embodiment, the depth of the groove formed on the surface of the lower shield magnetic body 2 can be freely changed, and the first layer film 13 and the bias hard film 14 can be further changed. Since the thickness of can be freely set, it is possible to very easily design the structure relating to the bias magnetic field application.

Furthermore, in the second embodiment, the first layer film 13 which is an insulating film or a non-magnetic metal layer interposed between the lower shield magnetic body 2 and the second layer film 14 which is a bias hard film. Since the coating film 22 is formed by applying a silicon oxide-based coating material and then heat-curing the coating material, the wiring portion and the different-layer conductor are caused by the liquid pool effect at the stage of applying the silicon oxide-based coating material. The level difference in the connection window portion between them becomes gentle as compared with the case where the first layer film is formed by the sputtering method or the vapor deposition method. As a result, the second layer film 14 can inevitably be formed in a gentle shape.

Therefore, the leakage of the magnetic flux in the bent portion of the second layer film 14 which is the bias hard film and the difficulty of magnetizing the taper portion of the second layer film 14 are reduced, and the bias magnetic field is more efficiently MR-converted. It becomes possible to apply to the element 1.

In this case, the film thickness of the coating film 22 is 150 μm.
When it is less than m, it becomes possible to improve the heat dissipation of the magnetoresistive effect element 1.

[0057]

According to the magnetoresistive thin film magnetic head of the present invention, the magnetoresistive element and the bias magnetic film are provided between the lower shield magnetic body and the upper shield magnetic body which are laminated on the substrate so as to face each other. In the magnetoresistive thin film magnetic head in which the magnetic field for bias is embedded in the groove formed in the lower shield magnetic body through the first layer film which is an insulating layer or a nonmagnetic metal layer, Since the magnetoresistive effect element is formed above the second layer film which is an insulating layer, it is possible to prevent useless leakage magnetic field and generate a magnetic field uniformly and efficiently, such as bulk Heisen noise. It is possible to significantly improve the magnetic characteristics by reducing the magnetic field, and it is possible to simplify the manufacturing process as compared with the conventional method.

In this case, the first layer film is constituted so as to include a film formed by applying a silicon oxide type coating material and then heating and curing the same, so that the magnetic flux in the bending portion of the bias magnetic film is reduced. It is possible to reduce leakage and difficulty in magnetizing the tapered portion of the bias magnetic film, and more efficiently apply a bias magnetic field to the magnetoresistive effect element.

Further, according to the method of manufacturing the magnetoresistive thin film magnetic head of the present invention, the magnetoresistive effect element and the bias are provided between the lower shield magnetic material and the upper shield magnetic material formed on the substrate so as to face each other. In a method of manufacturing a magnetoresistive thin film magnetic head formed by arranging a magnetic film for use in a magnetic head, a step of forming a groove on the lower shield magnetic body, and a first layer which is an insulating layer or a non-magnetic metal layer in the groove Since there is a step of embedding the bias magnetic film via a film and a step of forming the magnetoresistive effect element on the bias magnetic film via a second layer film which is an insulating layer, it is possible to prevent useless leakage magnetic field. It is possible to produce a magnetoresistive thin-film magnetic head capable of generating a magnetic field uniformly and efficiently, reducing bulk Heisen noise, etc., and greatly improving magnetic characteristics.
Moreover, the manufacturing process can be simplified as compared with the conventional one.

In this case, by forming the first layer film so as to include a film formed by applying a silicon oxide coating material and then heating and curing it, the magnetic flux in the bent portion of the bias magnetic film is reduced. It is possible to reduce the leakage and the difficulty of magnetizing the taper portion of the bias magnetic film, and to manufacture a magnetoresistive effect thin film magnetic head capable of more efficiently applying a bias magnetic field to the magnetoresistive effect element.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing a main part of a magnetoresistive effect thin film magnetic head according to a first embodiment of the invention.

FIG. 2 is a cross-sectional view schematically showing a lower shield magnetic body forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 3 is a cross-sectional view schematically showing a grooving process which is a manufacturing process of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 4 is a cross-sectional view schematically showing a bias hard film forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 5 is a cross-sectional view schematically showing an embedding step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 6 is a cross-sectional view schematically showing a flattening step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 7 is a sectional view schematically showing a lower gap insulating layer forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 8 is a cross-sectional view schematically showing an MR element forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 9 is a cross-sectional view schematically showing an electrode forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 10 is a cross-sectional view schematically showing an interlayer insulating layer forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 11 is a sectional view schematically showing an upper shield magnetic body forming step which is a manufacturing step of the magnetoresistive effect thin film magnetic head according to the first embodiment.

FIG. 12 is a sectional view schematically showing a main part of a magnetoresistive thin film magnetic head according to a second embodiment of the invention.

FIG. 13 is a sectional view schematically showing a non-magnetic film and bias hard film forming process which is a manufacturing process of the magnetoresistive thin film magnetic head according to the second embodiment.

FIG. 14 is a sectional view schematically showing a lower gap insulating layer forming step which is a manufacturing step of the magnetoresistive thin film magnetic head according to the second embodiment.

FIG. 15 is a sectional view schematically showing a main part of a conventional magnetoresistive thin film magnetic head.

FIG. 16 is a characteristic diagram showing a relationship between depth length and head output of a magnetoresistive thin film magnetic head.

[Explanation of symbols]

 1 ... MR thin film head 2 ... Lower shield magnetic body 3 ... Upper shield magnetic body 11 ... Non-magnetic substrate 12 ... Insulating layer 13 ... First layer film 14 ... Second Layer film 15 ... Lower gap insulating layer 16 ... Interlayer insulating layer 17a ... Front end electrode 17b ... Rear end electrode

Front page continued (72) Inventor Shoji Terada 6-735 Kitashinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Mamoru Sasaki 6-735 Kitashinagawa, Shinagawa-ku, Tokyo Sony Corporation Shares In-house (72) Inventor Shuichi Haga 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) In-house Akio Takada 6-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation

Claims (6)

[Claims] 1. A magnetoresistive effect type thin film magnetic head comprising a magnetoresistive effect element and a biasing magnetic film disposed between a lower shield magnetic body and an upper shield magnetic body, which are laminated facing each other on a substrate. The magnetic film is characterized in that the bias magnetic film is embedded in the groove formed in the lower shield magnetic body via a non-magnetic layer, and the magnetoresistive effect element is formed thereon via an insulating layer. Resistive thin film magnetic head. 2. The magnetoresistive thin-film magnetic head according to claim 1, wherein the non-magnetic layer includes a coating film formed by applying a silicon oxide coating material and then heating and curing the coating material. 3. After applying the silicon oxide-based coating material,
3. The magnetoresistive thin-film magnetic head according to claim 1, wherein the thickness of the coating film formed by heat curing is less than 150 nm. 4. A magnetoresistive thin film magnetic head manufactured by arranging a magnetoresistive effect element and a biasing magnetic film between a lower shield magnetic material and an upper shield magnetic material formed opposite to each other on a substrate. In the method, a step of forming a groove on the lower shield magnetic body, a step of embedding the bias magnetic film in the groove via the non-magnetic layer, and a magnetoresistive effect element thereon via an insulating layer. A method of manufacturing a magnetoresistive effect thin-film magnetic head, comprising: 5. A step of forming the non-magnetic layer by applying a silicon oxide-based coating material to the insulating layer or the non-magnetic metal layer and then heat-curing to form a film. A method of manufacturing a magnetoresistive thin film magnetic head according to claim 4. 6. After applying the silicon oxide-based coating material,
6. The method for manufacturing a magnetoresistive thin film magnetic head according to claim 4, wherein the film formed by heat curing is formed so that its thickness is less than 150 nm.