JPH0786488B2 - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH0786488B2 JPH0786488B2 JP1266853A JP26685389A JPH0786488B2 JP H0786488 B2 JPH0786488 B2 JP H0786488B2 JP 1266853 A JP1266853 A JP 1266853A JP 26685389 A JP26685389 A JP 26685389A JP H0786488 B2 JPH0786488 B2 JP H0786488B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- heater
- gas sensor
- gas detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は可燃性ガスを検出するガスセンサに係り、特
に酸化物半導体の電気抵抗変化を利用するガスセンサの
構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas sensor for detecting a combustible gas, and more particularly to the structure of a gas sensor for utilizing a change in electric resistance of an oxide semiconductor.
酸化物半導体を用いるガスセンサとしては、例えば厚膜
型のガスセンサが知られている。第６図は厚膜型のガス
センサを示す断面図である。厚膜型ガスセンサは絶縁性
基板31の１主面に酸化スズのような感ガス層32が、また
他の主面には感ガス層32を加熱するためのヒータ33が形
成される。感ガス層32は一般に厚膜印刷技術により所定
形状に印刷後基板に焼き付けられる。As a gas sensor using an oxide semiconductor, for example, a thick film type gas sensor is known. FIG. 6 is a sectional view showing a thick film type gas sensor. In the thick film type gas sensor, a gas sensitive layer 32 such as tin oxide is formed on one main surface of the insulating substrate 31, and a heater 33 for heating the gas sensitive layer 32 is formed on the other main surface. The gas-sensitive layer 32 is generally printed on the substrate after printing a predetermined shape by a thick film printing technique.
１対のヒータ用リード線34A,34Bと１対のガス検出用リ
ード線35A,35Bが電極36A,36B,37A,37Bに接続され、これ
らのリード線の他端は第７図に示すように絶縁性基材41
を貫通して埋め込まれた４本の金属製ピン42A,42B,42C,
42Dに接続される。A pair of heater lead wires 34A, 34B and a pair of gas detection lead wires 35A, 35B are connected to electrodes 36A, 36B, 37A, 37B, and the other ends of these lead wires are as shown in FIG. Insulating material 41
4 metal pins 42A, 42B, 42C, embedded through the
Connected to 42D.
しかしこのようなガスセンサはリード線35A,35Bとリー
ド線34A,34Bとが相互に基板31の反対面にとりつけられ
るので溶接上不利である。このため、実開昭63−12757
号公報には基板の同一主面に全てのリード線を接続する
ガスセンサが開示されている。第８図はこの従来の異な
るガスセンサを示し、第８図（ａ）は平面図、第８図
（ｂ）は下面図である。基板51の１主面に感ガス層55,
電極54,ヒータ用パッド53A,53Bが設けられ、また他の主
面にはヒータ62,ヒータ用電極61A,61Bが設けられる。ヒ
ータ用電極61A,61Bはスルーホール52A,52Bを介して、ヒ
ータ用パッド53A,53Bとそれぞれ接続する。However, such a gas sensor is disadvantageous in terms of welding because the lead wires 35A and 35B and the lead wires 34A and 34B are attached to the opposite surfaces of the substrate 31 mutually. For this reason,
Japanese Patent Publication discloses a gas sensor in which all lead wires are connected to the same main surface of a substrate. FIG. 8 shows this conventional different gas sensor. FIG. 8 (a) is a plan view and FIG. 8 (b) is a bottom view. Gas sensitive layer 55 on one main surface of substrate 51,
An electrode 54 and heater pads 53A and 53B are provided, and a heater 62 and heater electrodes 61A and 61B are provided on the other main surface. The heater electrodes 61A and 61B are connected to the heater pads 53A and 53B via the through holes 52A and 52B, respectively.
しかしながらこのような従来の異なるガスセンサにあっ
ては、感ガス層55とヒータ用パッド53A,53Bとが近接し
て設けられるため印刷時のマスクパターンの位置決めが
悪いと相互に接触したり、また感ガス層を印刷したあと
の感ガス層用インクのダレによって接触がおこるという
問題があった。However, in such a conventional different gas sensor, since the gas sensitive layer 55 and the heater pads 53A and 53B are provided in proximity to each other, if the mask patterns are not properly positioned during printing, they may come into contact with each other. There has been a problem that contact occurs due to dripping of the ink for the gas-sensitive layer after printing the gas layer.
この発明は上述の点に鑑みてなされ、その目的は基板上
の積層構造を改良してマスクパターンの位置決め精度が
ゆるやかで製造容易なガスセンサを提供することにあ
る。The present invention has been made in view of the above points, and an object of the present invention is to provide a gas sensor that improves the laminated structure on a substrate and has a gentle mask pattern positioning accuracy and is easy to manufacture.
上述の目的はこの発明によれば、正方形の基板上の中央
部に酸化物半導体からなる感ガス層を形成し、該感ガス
層の信号を検出する一対のガス検出用電極を前記基板上
の対角線上にコーナー部を含んで相対して形成し、前記
基板を所定温度に保持するヒータを前記基板裏面に形成
してなるガスセンサにおいて、前記基板裏面の前記ガス
検出用電極と対向するコーナー部に、該ガス検出用電極
とスルーホールを介して電気的に接続される一対のガス
検出用パッドを形成し、前記基板の裏面に前記ヒータに
加熱用の電圧を印加するとともにヒータ用リード線が接
続される一対のヒータ用電極を前記ガス検出用パッドと
基板の同一平面上の他のコーナー部に相対して形成し、
前記ガス検出用パッド及びヒータ用電極にそれぞれリー
ド線が接続されることによって達成される。According to the present invention, the above-mentioned object is to form a gas sensitive layer made of an oxide semiconductor in the central portion on a square substrate, and to provide a pair of gas detection electrodes for detecting a signal of the gas sensitive layer on the substrate. In a gas sensor formed diagonally including a corner portion so as to face each other, and a heater for holding the substrate at a predetermined temperature is formed on the back surface of the substrate, in a corner portion facing the gas detection electrode on the back surface of the substrate. Forming a pair of gas detection pads electrically connected to the gas detection electrodes through through holes, applying a heating voltage to the heater on the back surface of the substrate, and connecting a heater lead wire A pair of heater electrodes formed opposite to other corners on the same plane of the gas detection pad and the substrate,
This is achieved by connecting lead wires to the gas detection pad and the heater electrode, respectively.
本発明のガスセンサは印刷法の他、真空蒸着法，スパッ
タ，スプレー法等を用いて製造することができる。The gas sensor of the present invention can be manufactured by using a vacuum deposition method, a sputtering method, a spray method or the like in addition to the printing method.
ヒータと、ヒータ用電極と、ガス検出用パッドとは同一
のマスクパターンを用いて同時に形成することができ
る。The heater, the heater electrode, and the gas detection pad can be simultaneously formed using the same mask pattern.
〔実施例〕 次にこの発明の実施例を図面に基いて説明する。第１図
はこの発明の実施例に係るガスセンサを示し、第１図
（ａ）は平面図、第１図（ｂ）は下面図である。ガスセ
ンサの１つの主面にはガス検出用電極12A,12Bと感ガス
層11とが設けられ、他の主面にはヒータ23とヒータ用電
極24A,24Bとガス検出用パッド21A,21Bが設けられ、リー
ド線22A,22Bがガス検出用パッド21A,21Bに、またリード
線25A,25Bがヒータ用電極24A,24Bにそれぞれ接続され
る。ガス検出用パッド21A,21Bはそれぞれスルーホール1
3A,13Bを介して、ガス検出用電極12A,12Bと電気的に接
続される。[Embodiment] Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a gas sensor according to an embodiment of the present invention. FIG. 1 (a) is a plan view and FIG. 1 (b) is a bottom view. Gas detection electrodes 12A, 12B and a gas sensitive layer 11 are provided on one main surface of the gas sensor, and a heater 23, heater electrodes 24A, 24B and gas detection pads 21A, 21B are provided on the other main surface. The lead wires 22A and 22B are connected to the gas detection pads 21A and 21B, and the lead wires 25A and 25B are connected to the heater electrodes 24A and 24B, respectively. Gas detection pads 21A and 21B are through holes 1
It is electrically connected to the gas detection electrodes 12A and 12B via 3A and 13B.
このようなガスセンサは次に述べる方法で調製すること
ができる。白金ペーストがガス検出用電極12A,12Bのパ
ターンで同時に印刷する。乾燥後基板の他の主面にヒー
タ23、ヒータ用電極24A,24B、ガス検出用パッド21A,21B
を白金ペーストを用い、同一のパターンで同時に印刷す
る。スルーホール13A,13Bの内壁にも白金ペーストが塗
布される。乾燥後空気中において900℃で焼きつけられ
る。Such a gas sensor can be prepared by the method described below. The platinum paste is printed simultaneously with the pattern of the gas detection electrodes 12A and 12B. Heater 23, heater electrodes 24A, 24B, gas detection pads 21A, 21B on the other main surface of the substrate after drying.
Are simultaneously printed with the same pattern using a platinum paste. Platinum paste is also applied to the inner walls of the through holes 13A and 13B. After drying, it is baked in air at 900 ° C.
１〜５μｍの粒径の酸化スズと、パラジウムの微粉末
と、バインダとしてのコロイダルシリカと、セルロース
とをカルビトールに混合分散させた酸化スズペーストを
感ガス層11のパターンで50μｍ厚に印刷し、乾燥後空気
中において700℃で焼きつける。A tin oxide paste obtained by mixing and dispersing tin oxide having a particle diameter of 1 to 5 μm, fine palladium powder, colloidal silica as a binder, and cellulose in carbitol is printed with a pattern of the gas sensitive layer 11 to a thickness of 50 μm. After drying, bake at 700 ° C in air.
続いてリード線22A,22Bをガス検出用パッド21A,21Bに、
リード線25A,25Bをヒータ用電極24A,24Bに熱圧着により
溶接する。Next, the lead wires 22A, 22B to the gas detection pads 21A, 21B,
The lead wires 25A and 25B are welded to the heater electrodes 24A and 24B by thermocompression bonding.
第２図は得られたガスセンサの装着状態を示す斜視図で
ある。ガスセンサは絶縁性基材84を貫通して埋込まれた
金属性ピン83A,83B,83C,83Dにヒータ23を上側にしてマ
ウントされる。感ガス層が裏側になるので、感ガス層に
ごみが堆積することがなくセンサの長期信頼性が確保さ
れる。FIG. 2 is a perspective view showing a mounted state of the obtained gas sensor. The gas sensor is mounted on the metallic pins 83A, 83B, 83C, and 83D that penetrate through the insulating base material 84 and the heater 23 is on the upper side. Since the gas-sensitive layer is on the back side, dust is not deposited on the gas-sensitive layer and long-term reliability of the sensor is secured.
第３図はこの発明の実施例に係るガスセンサの他の装着
状態を示す斜視図である。FIG. 3 is a perspective view showing another mounted state of the gas sensor according to the embodiment of the present invention.
第４図はこの発明の異なる実施例に係るガスセンサを示
し、第４図（ａ）は平面図、第４図（ｂ）は下面図であ
る。FIG. 4 shows a gas sensor according to another embodiment of the present invention. FIG. 4 (a) is a plan view and FIG. 4 (b) is a bottom view.
第５図はこの発明のさらに異なる実施例に係るガスセン
サを示す平面図である。FIG. 5 is a plan view showing a gas sensor according to another embodiment of the present invention.
本発明によれば位置決め精度は±0.3mmでよく、従来の
±0.1mmに比し緩やかになっている。According to the present invention, the positioning accuracy may be ± 0.3 mm, which is gentler than the conventional ± 0.1 mm.
この発明によれば正方形の基板上の中央部に酸化物半導
体からなる感ガス層を形成し、該感ガス層の信号を検出
する一対のガス検出用電極を前記基板上の対角線上にコ
ーナー部を含んで相対して形成し、前記基板を所定温度
に保持するヒータを前記基板裏面に形成してなるガスセ
ンサにおいて、前記基板裏面の前記ガス検出用電極と対
向するコーナー部に、該ガス検出用電極とスルーホール
を介して電気的に接続される一対のガス検出用パッドを
形成し、前記基板の裏面に前記ヒータに加熱用の電圧を
印加するとともにヒータ用リード線が接続される一対の
ヒータ用電極を前記ガス検出用パッドと基板の同一平面
上の他のコーナー部に相対して形成し、前記ガス検出用
パッド及びヒータ用電極にそれぞれリード線を接続した
ことにより、ヒータと１対のヒータ用電極と１対のガス
検出用パッドとが一つのマスクパターンを用いて同時に
パターン形成することができ感ガス層とガス検出用電極
についてのみマスクパターンの位置決めを行えばよいの
で高精度の位置決めが不要となりガスセンサの製造が容
易となる。また、感ガス層の形状に自由度をもたせるこ
とができ、例えばマスクを不要として基板全面に感ガス
層を形成することも可能となる。According to the present invention, a gas sensitive layer made of an oxide semiconductor is formed in the central portion on a square substrate, and a pair of gas detection electrodes for detecting a signal of the gas sensitive layer are provided on a diagonally corner portion of the substrate. In a gas sensor having a heater for holding the substrate at a predetermined temperature formed on the back surface of the substrate, a gas sensor for detecting the gas is provided at a corner portion of the back surface of the substrate facing the gas detection electrode. A pair of gas detection pads that are electrically connected to the electrodes through through holes, and a pair of heaters to which a heating voltage is applied to the heater and a heater lead wire is connected to the back surface of the substrate. Electrodes are formed opposite to other corners on the same plane of the gas detection pad and the substrate, and lead wires are connected to the gas detection pad and the heater electrode, respectively. Since a pair of heater electrodes and a pair of gas detection pads can be simultaneously formed by using one mask pattern, the mask patterns need only be positioned for the gas-sensitive layer and the gas detection electrodes. Highly accurate positioning is not required and the gas sensor can be manufactured easily. Further, the shape of the gas-sensitive layer can be made flexible, and for example, it is possible to form the gas-sensitive layer on the entire surface of the substrate without using a mask.
【図面の簡単な説明】 第１図はこの発明の実施例に係るガスセンサを示し、第
１図（ａ）は平面図、第１図（ｂ）は下面図、第２図は
この発明の実施例に係るガスセンサの装着状態を示す斜
視図、第３図はこの発明の実施例に係るガスセンサの他
の装着状態を示す斜視図、第４図はこの発明の異なる実
施例に係るガスセンサを示し、第４図（ａ）は平面図、
第４図（ｂ）は下面図、第５図はこの発明のさらに異な
る実施例に係るガスセンサを示す平面図、第６図は従来
のガスセンサを示す断面図、第７図は従来のガスセンサ
の装着状態を示す平面図、第８図は従来の異なるガスセ
ンサを示し、第８図（ａ）は平面図、第８図（ｂ）は下
面図である。 12A,12B:ガス検出用電極、14:基板、21A,21B:ガス検出
用パッド、23:ヒータ、24A,24B:ヒータ用電極。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a gas sensor according to an embodiment of the present invention. FIG. 1 (a) is a plan view, FIG. 1 (b) is a bottom view, and FIG. 2 is an embodiment of the present invention. FIG. 3 is a perspective view showing a mounted state of a gas sensor according to an example, FIG. 3 is a perspective view showing another mounted state of a gas sensor according to an embodiment of the present invention, and FIG. 4 shows a gas sensor according to a different embodiment of the present invention. FIG. 4 (a) is a plan view,
4 (b) is a bottom view, FIG. 5 is a plan view showing a gas sensor according to still another embodiment of the present invention, FIG. 6 is a sectional view showing a conventional gas sensor, and FIG. 7 is mounting of a conventional gas sensor. FIG. 8 is a plan view showing a state, FIG. 8 shows a different conventional gas sensor, FIG. 8 (a) is a plan view, and FIG. 8 (b) is a bottom view. 12A, 12B: Gas detection electrodes, 14: Substrate, 21A, 21B: Gas detection pads, 23: Heater, 24A, 24B: Heater electrodes.
Claims (2)
らなる感ガス層を形成し、該感ガス層の信号を検出する
一対のガス検出用電極を前記基板上の対角線上にコーナ
ー部を含んで相対して形成し、前記基板を所定温度に保
持するヒータを前記基板裏面に形成してなるガスセンサ
において、前記基板裏面の前記ガス検出用電極と対向す
るコーナー部に、該ガス検出用電極とスルーホールを介
して電気的に接続される一対のガス検出用パッドを形成
し、前記基板の裏面に前記ヒータに加熱用の電圧を印加
するとともにヒータ用リード線が接続される一対のヒー
タ用電極を前記ガス検出用パッドと基板の同一平面上の
他のコーナー部に相対して形成し、前記ガス検出用パッ
ド及びヒータ用電極にそれぞれリード線を接続してなる
ことを特徴とするガスセンサ。1. A gas-sensitive layer made of an oxide semiconductor is formed in the center of a square substrate, and a pair of gas detection electrodes for detecting a signal of the gas-sensitive layer are provided on a diagonally diagonal corner of the substrate. In a gas sensor having a heater for holding the substrate at a predetermined temperature formed on the back surface of the substrate, a gas sensor for detecting the gas is provided at a corner portion of the back surface of the substrate facing the gas detection electrode. A pair of heaters for forming a pair of gas detection pads electrically connected to the electrodes through through holes, applying a heating voltage to the heater on the back surface of the substrate, and connecting a heater lead wire. Electrodes are formed opposite to other corners of the same plane of the gas detection pad and the substrate, and lead wires are connected to the gas detection pad and the heater electrode, respectively. Susensa.
ガス層がガス検出用電極を覆うように基板全面に形成さ
れていることを特徴とするガスセンサ。2. The gas sensor according to claim 1, wherein the gas sensitive layer is formed on the entire surface of the substrate so as to cover the gas detection electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266853A JPH0786488B2 (en) | 1989-10-14 | 1989-10-14 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266853A JPH0786488B2 (en) | 1989-10-14 | 1989-10-14 | Gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03130654A JPH03130654A (en) | 1991-06-04 |
| JPH0786488B2 true JPH0786488B2 (en) | 1995-09-20 |
Family
ID=17436574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1266853A Expired - Fee Related JPH0786488B2 (en) | 1989-10-14 | 1989-10-14 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786488B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100426939B1 (en) * | 1995-06-19 | 2004-07-19 | 피가로 기켄 가부시키가이샤 | Gas sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910079A (en) * | 1972-05-22 | 1974-01-29 | ||
| JPS6312757B2 (en) * | 1983-11-09 | 1988-03-22 | Ikenaga Tetsuko Kk |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6312757U (en) * | 1986-07-10 | 1988-01-27 |
-
1989
- 1989-10-14 JP JP1266853A patent/JPH0786488B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910079A (en) * | 1972-05-22 | 1974-01-29 | ||
| JPS6312757B2 (en) * | 1983-11-09 | 1988-03-22 | Ikenaga Tetsuko Kk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03130654A (en) | 1991-06-04 |
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