JPH0781976B2 - Sample discrimination method - Google Patents
Sample discrimination methodInfo
- Publication number
- JPH0781976B2 JPH0781976B2 JP21817287A JP21817287A JPH0781976B2 JP H0781976 B2 JPH0781976 B2 JP H0781976B2 JP 21817287 A JP21817287 A JP 21817287A JP 21817287 A JP21817287 A JP 21817287A JP H0781976 B2 JPH0781976 B2 JP H0781976B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- ceramic
- insulator
- sample
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Sampling And Sample Adjustment (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は試料判別方法に関し、特に半導体と絶縁体を含
むセラミック中の半導体部分と絶縁体部分を、簡単な手
法で判別する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample discriminating method, and more particularly to a method for discriminating a semiconductor portion and an insulator portion in a ceramic containing a semiconductor and an insulator by a simple method.
従来の技術 セラミックのエッチングは、従来サーマルエッチングあ
るいは化学エッチングが主流であり、加熱処理や硝酸等
の処理により粒界の判別や組成差のある部分の判別が行
なわれている。しかし、半導体と絶縁体を判別するエッ
チング法は従来法には妥当なものはない。2. Description of the Related Art Conventionally, thermal etching or chemical etching has been the mainstream for etching ceramics, and grain boundaries and portions having compositional differences are discriminated by heat treatment or nitric acid treatment. However, the etching method for discriminating between the semiconductor and the insulator is not suitable for the conventional method.
発明が解決しようとする問題点 半導体セラミックを応用した電子部品では、微小部分に
絶縁体と半導体が隣接して存在するうえに、それらの形
状が電気特性を決定するため、形状観察と計測が必要で
ある。しかし、一般に半導体セラミックは、隣接する絶
縁体部分とほとんど同一組成の場合が多く、現在までは
適切な試料処理法がなく、判別できなかった。Problems to be Solved by the Invention In an electronic component to which a semiconductor ceramic is applied, it is necessary to observe and measure a shape because an insulator and a semiconductor are present in a minute portion adjacent to each other and their shapes determine electric characteristics. Is. However, in general, semiconductor ceramics often have almost the same composition as the adjacent insulator portion, and until the present time, there was no appropriate sample processing method, and it could not be distinguished.
問題点を解決するための手段 本発明は前記問題点を解決するために、半導体と絶縁体
の両方を含むセラミックを電解液中に浸し電圧を印加す
ることにより、半導体部分のみをエッチングし、表面観
察に際し絶縁性部分と半導体部分を容易に判別できるよ
うにするものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention etches only a semiconductor portion by immersing a ceramic containing both a semiconductor and an insulator in an electrolytic solution and applying a voltage to the surface, This makes it possible to easily distinguish the insulating portion and the semiconductor portion during observation.
作用 本発明によれば、電解液中で電圧を印加されたセラミッ
クの半導体部分に選択的に電流が流れることにより、導
電性部分の表面が電解研磨されて形状が荒れる(エッチ
ングされる)。これによって半導体と絶縁体が複雑に入
り組んだセラミックであっても、半導体部分のみがエッ
チングされて光学的反射が変わったり、凹凸ができたり
して、目視観察,光学顕微鏡観察および電子顕微鏡観察
によって容易に判別できるようになる。Effect According to the present invention, the surface of the conductive portion is electropolished and the shape is roughened (etched) by selectively flowing a current in the ceramic semiconductor portion to which a voltage is applied in the electrolytic solution. As a result, even if the semiconductor and the insulator are intricately intricate, only the semiconductor part will be etched and the optical reflection will change or irregularities will be created, which will be easy by visual observation, optical microscope observation and electron microscope observation. You will be able to determine.
実 施 例 本発明の実施例として、以下に表層型半導体セラミック
コンデンサにおけるチタン酸バリウムセラミック円板の
試料判別法を、添付図面に従って説明する。Example As an example of the present invention, a method for discriminating a sample of a barium titanate ceramic disc in a surface layer type semiconductor ceramic capacitor will be described below with reference to the accompanying drawings.
第2図に表層型半導体セラミックコンデンサの構造模式
図を示す。チタン酸バリウムセラミック円板1の両面に
銀電極2とリード線3が付いてコンデンサになってい
る。セラミック円板1は、内部の半導体部分4と表層の
絶縁体部分5に分かれているが、その境界は見分けられ
ない。このコンデンサからリード線3と電極2を取り去
り、第3図に示すようにセラミック円板の一端を削り落
として断面6を出し、内部半導体部分4を露出させてそ
こに新たに電極7とリード線8を取り付ける。これを第
4〜5図に示すように樹脂9に包埋して、リード線8を
付けた部分と反対側の部分とを削り、完全に平滑になる
まで研磨する。全体の研磨面10と同様にセラミック断面
11が露出しており、実際は内部半導体部分と表層絶縁体
部分に分かれているが、研磨面に差は見られない。FIG. 2 shows a schematic diagram of the structure of the surface layer type semiconductor ceramic capacitor. A silver electrode 2 and a lead wire 3 are attached to both sides of a barium titanate ceramic disk 1 to form a capacitor. The ceramic disc 1 is divided into a semiconductor portion 4 inside and an insulator portion 5 on the surface layer, but the boundary between them is indistinguishable. The lead wire 3 and the electrode 2 are removed from this capacitor, one end of the ceramic disk is shaved off to expose a cross section 6 as shown in FIG. 3, the internal semiconductor portion 4 is exposed, and the electrode 7 and the lead wire are newly added there. Attach 8. This is embedded in a resin 9 as shown in FIGS. 4 to 5, the portion to which the lead wire 8 is attached and the portion on the opposite side are scraped off, and polished until completely smooth. Ceramic cross section as well as the entire polished surface 10
11 is exposed and is actually divided into an internal semiconductor portion and a surface insulator portion, but no difference is seen on the polished surface.
この試料を、第1図に示すように、希硝酸等の電解液14
中に試料15を陽極として陰極16との間に直流電源17を置
いて電圧を印加し、電解エッチングを行なう。これによ
ってセラミック断面11の半導体部分4の表面がエッチン
グされ、表層絶縁体部分5は研磨面のまま残るため、光
学的反射や凹凸に差がつき、容易に判別できる。エッチ
ング前後の研磨面の光学顕微鏡写真を観察すると、包埋
樹脂中のセラミック研磨面が、電解エッチング後には、
内部半導体部分4が黒く観察され、表層絶縁体部分5は
研磨面のまま白く観察されるので、形状や厚みが明瞭に
観察できる。This sample, as shown in FIG.
A DC power supply 17 is placed between the cathode 15 and the sample 15 as an anode, and a voltage is applied to perform electrolytic etching. As a result, the surface of the semiconductor portion 4 of the ceramic cross section 11 is etched, and the surface insulating material portion 5 remains as a polished surface, so that optical reflection and unevenness are different, and can be easily discriminated. Observing the optical micrographs of the polished surface before and after etching, the ceramic polished surface in the embedding resin shows that after electrolytic etching,
Since the internal semiconductor portion 4 is observed black and the surface insulator portion 5 is observed white on the polished surface, the shape and thickness can be clearly observed.
また、粒界層型半導体セラミックコンデンサについて
も、試料を極端に薄片化して電解エッチングをすること
で、同様の処理が可能である。Further, also for the grain boundary layer type semiconductor ceramic capacitor, the same treatment can be performed by extremely thinning the sample and performing electrolytic etching.
発明の効果 本発明により、化学的にほぼ同一組成,同一構造で、導
電性のみが異なるセラミックを、基本的な電気化学にの
っとって表面処理を施すことにより、容易に判別でき
る、本発明による処理法は簡便であり、特別な装置を必
要とせず、かつ電子顕微鏡観察にも耐えうる高分解能を
備えており、きわめて有益である。EFFECTS OF THE INVENTION According to the present invention, the treatments according to the present invention, which can be easily discriminated by subjecting ceramics having substantially the same chemical composition and the same structure but different in conductivity only to the surface treatment according to the basic electrochemistry The method is simple, requires no special equipment, and has a high resolution that can withstand observation with an electron microscope, which is extremely useful.
第1図は試料を電解エッチングする模様を示す図、第2
図は表層型半導体セラミックコンデンサの一部切欠斜視
図、第3図は前記コンデンサを試料に加工した状態を表
す斜視図、第4図は前記試料の樹脂包埋状態を表す斜視
図、第5図は同底面図である。 4……内部半導体部分、5……表層絶縁体部分、14……
電解液、15……試料、16……陰極、17……電源。FIG. 1 is a diagram showing a pattern of electrolytically etching a sample, and FIG.
FIG. 4 is a partially cutaway perspective view of a surface layer type semiconductor ceramic capacitor, FIG. 3 is a perspective view showing a state where the capacitor is processed into a sample, and FIG. 4 is a perspective view showing a resin-embedded state of the sample, FIG. Is a bottom view of the same. 4 …… Internal semiconductor part, 5 …… Surface layer insulator part, 14 ……
Electrolyte, 15 …… sample, 16 …… cathode, 17 …… power supply.
Claims (1)
に浸し、電圧を印加することにより、半導体部分のみを
電解エッチングし、そのエッチング度合によって、前記
セラミック中の前記半導体部分と絶縁体部分を判別する
ことを特徴とする試料判別方法。1. A ceramic containing a semiconductor and an insulator is dipped in an electrolytic solution, and a voltage is applied to electrolytically etch only the semiconductor portion. Depending on the etching degree, the semiconductor portion and the insulator portion in the ceramic are separated. A method for discriminating a sample, which comprises discriminating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21817287A JPH0781976B2 (en) | 1987-09-01 | 1987-09-01 | Sample discrimination method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21817287A JPH0781976B2 (en) | 1987-09-01 | 1987-09-01 | Sample discrimination method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6461659A JPS6461659A (en) | 1989-03-08 |
JPH0781976B2 true JPH0781976B2 (en) | 1995-09-06 |
Family
ID=16715751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21817287A Expired - Fee Related JPH0781976B2 (en) | 1987-09-01 | 1987-09-01 | Sample discrimination method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0781976B2 (en) |
-
1987
- 1987-09-01 JP JP21817287A patent/JPH0781976B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS6461659A (en) | 1989-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |