JPH0776098B2 - Method for producing high-purity quartz glass - Google Patents

Method for producing high-purity quartz glass

Info

Publication number
JPH0776098B2
JPH0776098B2 JP60240557A JP24055785A JPH0776098B2 JP H0776098 B2 JPH0776098 B2 JP H0776098B2 JP 60240557 A JP60240557 A JP 60240557A JP 24055785 A JP24055785 A JP 24055785A JP H0776098 B2 JPH0776098 B2 JP H0776098B2
Authority
JP
Japan
Prior art keywords
quartz glass
temperature
glass
purity quartz
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60240557A
Other languages
Japanese (ja)
Other versions
JPS62100436A (en
Inventor
進 八馬
政昭 池村
信也 菊川
克成 落合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP60240557A priority Critical patent/JPH0776098B2/en
Publication of JPS62100436A publication Critical patent/JPS62100436A/en
Publication of JPH0776098B2 publication Critical patent/JPH0776098B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01446Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、高純度石英ガラスの製造方法に関するもので
ある。
The present invention relates to a method for producing high-purity quartz glass.

[従来の技術] 従来より、合成石英ガラスを製造する方法の一つとして
気相反応法により多孔質石英ガラス母材を形成し、この
母材を加熱してガラス化する方法が採用されている。す
なわち、バーナから珪素化合物、水素、酸素等の原料ガ
スを鉛直に懸下した回転する出発部材(以下種棒と書く
ことがある)に向けて供給し、四塩化珪素等の珪素化合
物を酸・水素炎中で加水分解させ、生成したシリカ微粒
子を石英製等の前記種棒の下端部に付着、堆積させて多
孔質石英ガラス母材を形成する。次いでこの多孔質石英
ガラス母材を加熱炉に入れて、母材を焼結することによ
りガラス化する方法である。この方法によれば極めて高
純度な石英ガラスを製造することが出来るが、形状は通
常円柱状のロッドとなるので、角柱状のブロックが必要
とされる場合には、グラファイト容器等を用いて加熱成
形を行ない石英ガラスインゴットを得る場合もある。
[Prior Art] Conventionally, as one of the methods for producing synthetic quartz glass, a method of forming a porous quartz glass base material by a gas phase reaction method and heating the base material to vitrify has been adopted. . That is, a raw material gas such as a silicon compound, hydrogen, and oxygen is supplied from a burner toward a rotating starting member (hereinafter also referred to as a seed rod) that is vertically suspended, and a silicon compound such as silicon tetrachloride is supplied as an acid. The silica fine particles produced by hydrolysis in a hydrogen flame are adhered and deposited on the lower end of the seed rod made of quartz or the like to form a porous quartz glass base material. Then, this porous quartz glass base material is put into a heating furnace, and the base material is sintered to be vitrified. This method can produce extremely high-purity quartz glass, but since the shape is usually a cylindrical rod, if a prismatic block is required, heat it using a graphite container or the like. In some cases, molding is performed to obtain a quartz glass ingot.

[発明が解決しようとする問題点] この方法により石英ガラスを製造する場合、純度的には
極めて高いにもかかわらず、場合によっては、ガラスロ
ッドの外周部(外表面より0〜10mmの厚さ)にクリスト
バライトの微結晶(10〜100μm径)が析出し、光学的
用途など無欠点品が要求される場合に、製品歩留り低下
の要因となる。この微結晶が外周部に生成する原因につ
いては、必らずしも明確ではないが、異質なシリカ微粒
子が多孔質母材中に含まれる事などによるものと考えら
れる。
[Problems to be Solved by the Invention] When quartz glass is produced by this method, although the purity is extremely high, in some cases, the outer peripheral portion of the glass rod (having a thickness of 0 to 10 mm from the outer surface) When cristobalite microcrystals (diameter of 10 to 100 μm) are deposited on (1), and defect-free products such as optical applications are required, the product yield is reduced. The cause of generation of the fine crystals in the outer peripheral portion is not necessarily clear, but is considered to be due to inclusion of foreign silica fine particles in the porous base material.

[問題点を解決するための手段] 本発明は、前述の問題点を解決すべくなされたものであ
り、珪素化合物を酸水素炎中で加水分解して生成したシ
リカ微粒子を回転する出発部材上に堆積させて多孔質母
材を形成させ、これを焼成して得られる高純度石英ガラ
スロッドあるいはこれを高温下で成形して得られる石英
ガラスインゴットにつき、その雰囲気温度を300℃/hr以
上の昇温速度で1730℃以上まで昇温し、1〜4時間この
1730℃以上の高温下で熱処理した後、その雰囲気温度が
1200〜1000℃の範囲を30℃/hr以下の昇温速度で冷却す
ることにより、ガラス外周部に含まれる結晶質微小欠点
を除去することを特徴とする、欠点のない高純度石英ガ
ラス製造方法を提供するものである。上記した多孔質母
材を焼成して得られる高純度石英ガラスロッドおよびそ
れを高温下で成形して得られる石英ガラスインゴット以
下では総称して合成石英ガラスインゴットと書く。
[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and is provided on a starting member for rotating silica fine particles produced by hydrolyzing a silicon compound in an oxyhydrogen flame. A high-purity quartz glass rod obtained by depositing on a porous matrix to form a porous base material, or a quartz glass ingot obtained by molding this at a high temperature, has an ambient temperature of 300 ° C / hr or more. The temperature is raised to 1730 ° C or higher at this rate for 1 to 4 hours.
After heat treatment at a high temperature of 1730 ℃ or higher, the ambient temperature
A method for producing high-purity quartz glass without defects, characterized by removing crystalline microscopic defects contained in the outer peripheral portion of the glass by cooling the range of 1200 to 1000 ° C at a heating rate of 30 ° C / hr or less Is provided. A high-purity quartz glass rod obtained by firing the above-mentioned porous base material and a quartz glass ingot obtained by molding it at a high temperature will be generically referred to as a synthetic quartz glass ingot below.

本発明において熱処理を施す石英ガラスは前述した方法
により製造された合成石英ガラスインゴッドの円柱状ロ
ッドないしは角柱状ブロックであり、これを有機溶媒及
び10〜20%弗酸中で処理し、ガラスに付着した有機物及
びSiO2以外の金属酸化物や金属イオンを除去した後、純
水で洗浄後、乾燥したものを用いる事が好ましい。これ
を例えば第1図に示した如きグラファイト製の容器内に
セットし、容器とガラスとの間をカーボンブラックある
いは高純度SiC粉末等で充填した後、炉内に設置する。
炉はグラファイトヒーターによる抵抗加熱方式の炉ある
いは誘導加熱炉を用いる事が好ましい。
The quartz glass to be heat-treated in the present invention is a cylindrical rod or prismatic block of the synthetic quartz glass ingot produced by the above-mentioned method, which is treated with an organic solvent and 10 to 20% hydrofluoric acid and adhered to the glass. It is preferable to remove the organic substances and metal oxides other than SiO 2 and metal ions, wash with pure water, and then dry the product. This is set in, for example, a graphite container as shown in FIG. 1, and the space between the container and glass is filled with carbon black or high-purity SiC powder or the like, and then installed in a furnace.
It is preferable to use a resistance heating type furnace using a graphite heater or an induction heating furnace.

次いで炉内の雰囲気をアルゴン等の不活性ガス雰囲気に
置換した後、昇温を開始する。昇温速度は通常300℃/hr
以上である事が好ましい。これが遅い場合には、1400〜
1600℃の石英ガラスが失透しやすい温度域での滞留時間
が長くなる為仕込んだ合成石英ガラスインゴットの表面
が一部失透し、熱処理終了の時点でガラス表面に気泡の
巻込みが発生し、好ましくない。
Next, the atmosphere in the furnace is replaced with an inert gas atmosphere such as argon, and then the temperature rise is started. The heating rate is usually 300 ℃ / hr
The above is preferable. If this is slow, 1400 ~
Since the residence time of the quartz glass at 1600 ° C tends to devitrify for a long period of time, the surface of the synthetic quartz glass ingot that has been devitrified partially devitrifies and bubbles are entrained on the glass surface at the end of the heat treatment. , Not preferable.

熱処理温度としては1730℃以上である事が好ましい。こ
れは、クリストバライトの結晶が実質的に溶解消失する
為には1730℃以上が必要である為である。1730℃以上で
の保持時間はクリストバライト状の欠点の大きさやガラ
スの大きさにより一概には決まらないが、通常1〜4時
間が好ましい。これよりも短い場合には、ガラスの伝熱
がおいつかなかったり、溶解消失速度がおいつかず欠点
が消失せず、また、これ以上長い時間処理する必要は通
常ない。1730℃以上での保持が終了した後の降温速度は
任意であるが、ガラス中に熱的歪を残さない為には1200
〜1000℃の範囲を30℃/hr程度ないしそれ以下の速度で
冷却する必要がある。
The heat treatment temperature is preferably 1730 ° C. or higher. This is because 1730 ° C. or higher is required for the crystals of cristobalite to substantially disappear by dissolution. The holding time at 1730 ° C or higher is not generally determined depending on the size of the cristobalite-like defects and the size of the glass, but is usually 1 to 4 hours. When the length is shorter than this, the heat transfer of the glass is not feasible, the dissolution disappearance speed is frustrating, and the defects are not eliminated, and it is not usually necessary to treat for a longer time. The temperature lowering rate after holding at 1730 ° C or higher is optional, but it is 1200 to prevent thermal strain from remaining in the glass.
It is necessary to cool in the range of up to 1000 ° C at a rate of 30 ° C / hr or less.

[実施例] 四塩化珪素を原料として製造した直径120mm、長さ480m
m、重量11.9kgの合成石英ガラスインゴット(ロッド表
面より5mmの範囲にクリストバライト状欠点を約500個含
む)を、通常の処理により洗浄、乾燥を行ない表面の付
着物を除去した後、内径150mmφ、高さ500mmの第1図に
示した如き、グラファイト製の容器にセットし、ガラス
と容器との間にカーボンブラック粉末(東洋カーボン
(株)製、シースト3Hを予め熱処理したもの)を充填し
た後、最大出力140KWのカーボンヒーターを有する400mm
(内径)×700mm(高さ)の炉内有効寸法を有する電気
炉内にセットした。
[Example] A diameter of 120 mm and a length of 480 m manufactured by using silicon tetrachloride as a raw material
m, 11.9 kg in weight synthetic quartz glass ingot (including about 500 cristobalite-like defects within 5 mm from the rod surface) is washed and dried by ordinary treatment to remove deposits on the surface, and then the inner diameter is 150 mmφ, After setting it in a graphite container with a height of 500 mm as shown in Fig. 1, and filling carbon black powder (manufactured by Toyo Carbon Co., Ltd., which was heat-treated with Seast 3H in advance) between the glass and the container. , 400mm with carbon heater with maximum output 140KW
It was set in an electric furnace having an effective size of (inner diameter) × 700 mm (height).

次いで炉内を真空ポンプで引き、0.05トールまで減圧に
引いた後、引き続き減圧に引きながら昇温を開始した。
2時間で1000℃迄昇温したところで真空ポンプを停止
し、アルゴンガスを炉内に導入して、1気圧とした。こ
の後、2時間で1750℃に昇温し、2時間保持した。
Then, the inside of the furnace was evacuated by a vacuum pump to reduce the pressure to 0.05 Torr, and then the temperature was increased while continuing to reduce the pressure.
When the temperature was raised to 1000 ° C. in 2 hours, the vacuum pump was stopped and argon gas was introduced into the furnace to 1 atm. After this, the temperature was raised to 1750 ° C. in 2 hours and kept for 2 hours.

この後1250℃まで1時間で降温し、次いで1000℃まで30
℃/hrで降温し、電気炉の電源を切り放冷した。そして
炉内温度が室温まで冷却した事を確認した後、グラファ
イト容器を炉から取出し合成石英ガラスインゴットを取
り出した。このインゴットの重量は11.8kgで形状等には
変化が見られなかった。これを両端面を研磨し、高輝度
光源を用いて欠点を観察したところ、外周部のクリスト
バライト状の欠点はすべて消失しており無欠点のガラス
であった。
After this, the temperature is lowered to 1250 ° C in 1 hour and then to 1000 ° C 30
The temperature was lowered at ° C / hr, the electric furnace power was turned off, and the system was allowed to cool. After confirming that the temperature inside the furnace had cooled to room temperature, the graphite container was taken out of the furnace and the synthetic quartz glass ingot was taken out. The weight of this ingot was 11.8 kg, and there was no change in shape or the like. Both ends of this were polished, and defects were observed using a high-intensity light source. As a result, all of the cristobalite-shaped defects on the outer peripheral part disappeared and the glass was defect-free.

[発明の効果] 以上説明したように本発明によれば、合成石英ガラスイ
ンゴットの外周部に含まれる結晶質の微小欠点を除去す
ることが出来、歩留りよく欠点のない高純度石英ガラス
を製造する事が出来る。しかも、高温下で処理する為に
脈理や歪み等のない均質なガラスが得られるという効果
も認められる。
[Effects of the Invention] As described above, according to the present invention, it is possible to remove microscopic crystalline defects contained in the outer peripheral portion of a synthetic quartz glass ingot, and to manufacture high-purity quartz glass with good yield and no defects. I can do things. Moreover, the effect that a homogeneous glass having no striae or distortion can be obtained because the treatment is performed at a high temperature.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明の一実施例を示す説明図である。 1……合成石英ガラスインゴット 2……熱処理用グラファイト製容器 3……容器とガラスとの間に充填した充填材 FIG. 1 is an explanatory view showing an embodiment of the present invention. 1 ... Synthetic quartz glass ingot 2 ... Graphite container for heat treatment 3 ... Filling material filled between container and glass

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】珪素化合物を酸水素炎中で加水分解して生
成したシリカ微粒子を回転する出発部材上に堆積させて
多孔質母材を形成させ、これを焼成して得られる高純度
石英ガラスロッドあるいはこれを高温下で成形して得ら
れる石英ガラスインゴットにつき、その雰囲気温度を30
0℃/hr以上の昇温速度で1730℃以上まで昇温し、1〜4
時間この1730℃以上の高温下で熱処理した後、その雰囲
気温度が1200〜1000℃の範囲を30℃/hr以下の冷却速度
で冷却することにより、ガラス外周部に含まれる結晶質
微小欠点を除去することを特徴とする、欠点のない高純
度石英ガラスの製造方法。
1. A high-purity quartz glass obtained by depositing silica fine particles produced by hydrolyzing a silicon compound in an oxyhydrogen flame on a rotating starting member to form a porous base material and firing the porous base material. The ambient temperature of the rod or quartz glass ingot obtained by molding this at high temperature is 30
1 to 4 at a heating rate of 0 ° C / hr or more to 1730 ° C or more
After heat treatment at a high temperature of 1730 ° C or higher for a period of time, by cooling the atmosphere temperature range of 1200 to 1000 ° C at a cooling rate of 30 ° C / hr or less, crystalline micro defects contained in the outer periphery of the glass are removed A method for producing high-purity quartz glass without defects, which comprises:
JP60240557A 1985-10-29 1985-10-29 Method for producing high-purity quartz glass Expired - Fee Related JPH0776098B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60240557A JPH0776098B2 (en) 1985-10-29 1985-10-29 Method for producing high-purity quartz glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60240557A JPH0776098B2 (en) 1985-10-29 1985-10-29 Method for producing high-purity quartz glass

Publications (2)

Publication Number Publication Date
JPS62100436A JPS62100436A (en) 1987-05-09
JPH0776098B2 true JPH0776098B2 (en) 1995-08-16

Family

ID=17061298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60240557A Expired - Fee Related JPH0776098B2 (en) 1985-10-29 1985-10-29 Method for producing high-purity quartz glass

Country Status (1)

Country Link
JP (1) JPH0776098B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69219445T2 (en) * 1991-06-29 1997-08-07 Shinetsu Quartz Prod SYNTHETIC OPTICAL ELEMENT MADE OF QUARTZ GLASS FOR EXCIMER LASER AND ITS PRODUCTION
EP0630864A3 (en) * 1993-05-24 1995-05-24 Sumitomo Electric Industries Fabrication process of polarization-maintaining optical fiber.
JP4439072B2 (en) * 2000-03-29 2010-03-24 信越石英株式会社 Synthetic quartz glass for optics, heat treatment method and heat treatment apparatus thereof
JP4462720B2 (en) 2000-06-06 2010-05-12 信越石英株式会社 Heat treatment method for optical synthetic quartz glass
JPWO2004065315A1 (en) * 2003-01-21 2006-05-18 株式会社ニコン Synthetic quartz glass optical member and manufacturing method thereof
CN115259640A (en) * 2022-04-15 2022-11-01 常熟佳合显示科技有限公司 Heat treatment method and device for special-shaped curved surface cover plate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145040A (en) * 1981-03-02 1982-09-07 Nippon Telegr & Teleph Corp <Ntt> Production of rod lens
JPS58217442A (en) * 1982-06-11 1983-12-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture of high strength optical fiber

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JPS62100436A (en) 1987-05-09

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