JPH0771953A - Interatomic force microscope, magnetic force microscope, reproducing device and recording reproducing device - Google Patents

Abstract

PURPOSE:To provide an interatomic force microscope that measures the three- dimensional configuration of a sample surface in a scale of nanometer, and devices to which it is applied. CONSTITUTION:The interatomic force microscope is provided with a mechanical moving portion 103 formed on a first electrically conductive semiconductor substrate 101, a probe 105 secured to the mechanical moving portion 103 to detect an interatomic force acting on a subject for measurement, and an electrode 106, and the displacement of the probe 105 due to the interatomic force is detected form change in conductivity between a second electrically conductive source region 108 and drain region 109 which are formed on the semiconductor substrate 101. The mechanical displacement can thus be read directly as change in amount of current, so that need for positioning the mechanical moving portion and a displacement detecting system relative to each other is eliminated, resulting in enhanced controllability.

Description

Detailed Description of the Invention

[0001]

The present invention relates to an atomic force microscope (A) for measuring the three-dimensional shape of a sample surface on a nanometer scale.
tomographic force microscope (hereinafter referred to as "AFM") and a magnetic force microscope. Furthermore, the present invention relates to a reproducing apparatus and a recording / reproducing apparatus using the above AFM.

[0002]

2. Description of the Related Art AFM is a cantilever (elastic body) that supports the atomic force acting between the sample and the probe when the probe is brought closer to the sample surface to a distance of 1 nm or less.
Of the sample surface while controlling the distance between the sample and the probe so as to keep this atomic force constant, the three-dimensional shape of the sample surface is determined to be 1 nm or less. It is to be observed at resolution (Binnig e
t. al, Phys. Rev. Lett. 56,9, p
930 (1986)). According to AFM, a scanning tunneling microscope (Scanning Tunneling M
Since it is not necessary for the sample to be electrically conductive (e.g., microscope, hereafter referred to as "STM"), it is possible to observe an insulating sample, especially the surface of a semiconductor resist surface or a biopolymer on the order of atoms or molecules. Applications are expected.

7 and 8 show a conventional AFM. AFM
Is basically a probe 801 facing the sample surface, a cantilever 802 supporting the probe, a displacement detecting means of the cantilever due to an atomic force acting between the sample and the probe, and a relative position of the sample with respect to the probe. It consists of three-dimensional control means.

As a conventional cantilever displacement amount detecting means, as shown in FIG. 7, light is applied from the back of the cantilever 802, and an optical lever method is obtained from the amount of positional deviation of the reflected light spot, or as shown in FIG. Cantilever 802
A conductive probe 901 is disposed close to the back of the probe, and the position of the conductive probe is controlled so that the tunnel current flowing between the cantilever 802 and the conductive probe 901 can be kept constant, and the control amount is obtained. There is a tunnel current method.

Further, in EP 0290648, the electrode 1 facing the back of the cantilever 802 as shown in FIG.
There is disclosed a capacitor-like capacitance change method in which 001 is provided and the change in capacitance is converted into a current to detect the amount of displacement.

[0006]

However, in the above optical lever method, an adjusting jig for applying a light beam to the back surface of the cantilever, an optical component such as a lens 803 and a mirror, a position adjusting jig for the two-divided photodiode 804, and In the tunnel current method, a conductive probe 901 for the back surface of the cantilever
The mechanical structure of the cantilever displacement amount detecting means such as the position adjusting jig is complicated and large. For this reason, the mechanical structure is displaced due to the influence of disturbances such as floor vibration, acoustic vibration, and temperature drift, or resonance occurs due to a decrease in rigidity, which limits the resolution of cantilever displacement detection.

Further, in the capacitance change method, the amount of current obtained depends on the capacitance of the opposing electrodes (that is, the capacitors), so that the electrodes require a certain size of electrode area, and the electrode area is reduced. In this case, a desired detection current cannot be obtained due to the decrease in capacitance, and there is a problem in downsizing the detection unit without impairing the detection sensitivity.

The object of the present invention is, in view of the problems of the above-mentioned prior art, that relative displacement between the displacement portion and the detection portion is unnecessary, the influence of disturbance is less likely, and the displacement amount is detected with high sensitivity. An object of the present invention is to provide an AFM and a magnetic force microscope that can be further downsized and further a reproducing apparatus and a recording / reproducing apparatus using the AFM.

[0009]

That is, according to the present invention (1), a mechanical movable portion formed on a first conductive type semiconductor substrate and an object to be measured fixed to the mechanical movable portion are provided. An atomic force including a probe and an electrode for detecting an atomic force, and detecting a displacement of the probe due to the atomic force by a change in conductivity between a pair of second conductivity type regions formed on the semiconductor substrate. The present invention (2) provides a mechanical movable portion formed on a first conductive type semiconductor substrate, a probe fixed to the mechanical movable portion and an electrode for detecting a magnetic force with an object to be measured. A magnetic force microscope comprising: a displacement of the probe due to the magnetic force, which is detected by a change in conductivity between a pair of regions of the second conductivity type formed in the semiconductor substrate. Movable part formed on a conductive semiconductor substrate Comprises a fixed probe and the electrode in the machine moving part, a displacement of the probe corresponding to the information recorded on a recording medium, it is formed in the semiconductor substrate 1
The present invention (4) is a reproducing device for detecting by a change in conductivity between the regions of the second conductivity type of a set, and the present invention (4) provides a mechanical movable part formed on a semiconductor substrate of the first conductivity type, and the mechanical movable part. Of the probe corresponding to the information recorded on the recording medium, which is provided with a probe and an electrode fixed to a portion, and which records on a recording medium capable of recording information by applying a voltage between the probe and the electrode. A recording / reproducing apparatus for detecting a displacement by a change in conductivity between a pair of regions of the second conductivity type formed on the semiconductor substrate.

A means for detecting the displacement amount of the probe according to the present invention will be described with reference to the drawings.

FIG. 1 is a view best showing the features of the present invention. FIG. 1 (a) is a perspective view of a displacement detecting means (AFM detecting portion), and FIG. 1 (b) is A- of FIG. 1 (a). It is sectional drawing in the A surface. In the figure, 101 is a semiconductor substrate of a first conductivity type, 102 is a source region 108 and a substrate detection region (channel region) 110 of a second conductivity type different from the first conductivity type.
A current detection means composed of a drain region 109 of the second conductivity type adjacent to each other via 103, 103 is a cantilever-shaped mechanical movable portion, and 105 and 106 are probes and electrodes (movable electrodes) fixed to the mechanical movable portion 103. is there. As shown in FIG. 1B, the source region 108 and the drain region 109 are provided side by side with the movable electrode 106 with a certain distance.

When detecting, for example, an atomic force as a physical quantity in this configuration, first, when the probe 105 is brought close to the object to be measured, the atomic force acting between them is beam-shaped mechanical movable portion 1.
It is transmitted to 03. Since the mechanical movable portion 103 has a cantilever shape, it is bent by this force. Further, this amount of deflection changes the resistance between the drain region 109 and the source region 108 (hereinafter referred to as “substrate detection region” or “channel region”) in the surface of the semiconductor substrate by applying a voltage to the movable electrode 106. , Can be detected as a change in current due to the voltage applied between the source and drain regions.

This current detecting means 102 is basically
MOS (Metal-Oxide-Semicondu)
The gate oxide film of the ctor) field effect transistor is removed so that the height of the movable electrode 106 corresponding to the gate electrode is displaced with respect to the channel region 110. Therefore, the movable electrode 106 and the channel region 11
The space between 0 and 0 can be considered as a gate insulating layer formed by a space such as a vacuum, and the operating principle of the current detecting means according to the present invention can be understood from the operating principle of the conventional MOS FET.

That is, in the AFM of the present invention, the MO
When a reverse bias voltage is applied to the movable electrode 106 corresponding to the gate electrode of the S-type FET, a channel formed by the inversion layer is formed in the portion sandwiched between the source region 108 and the drain region 109. When the atomic force acts on the probe 105, the mechanical movable portion 103 is displaced, and the movable electrode 106 is displaced toward or away from the substrate detection region, that is, the channel region 110. When the movable electrode 106 moves away from the surface of the semiconductor substrate 101, the amount of charges induced in the channel region 110 sharply decreases, the channel becomes thin, and the resistance between the source and the drain increases. On the other hand, when the movable electrode 106 approaches the surface of the semiconductor substrate 101, the amount of charges induced in the channel region 110 rapidly increases, the channel becomes thicker, and the resistance between the source and the drain decreases. Therefore, it is possible to directly know the displacement amount of the movable electrode 106 by measuring the resistance between the source region and the drain region while applying a constant reverse bias voltage to the movable electrode 106. The shape of can be obtained.

The current Id detected by the current detecting means
Is expressed by the following formula (Formula 1) in the drain saturation region. In this equation, there is a vacuum space (distance T _vac , dielectric constant ε _vac ) under the gate which is the movable electrode, and an oxide film (distance T _ox ,
The case where there is a dielectric constant ε _ox ) is shown.

[0016]

[Equation 1]

Vd: drain voltage (V) Vd = Vg-Vt Vg: gate-source voltage (V) Vt: gate threshold voltage (V) μ: electron or hole mobility (m ² / V-) s) W: Channel width (m) L: Channel length from drain to source (m) ε _ox : Dielectric constant of oxide film (F / m) ε _vac : Dielectric constant of vacuum (F / m) _Tox : Gate Thickness of oxide film on lower channel (m) T _vac : Thickness of space under gate (m)

As can be seen from this equation, when considering the output of the AFM of the present invention at a realistic size, the size of the movable electrode corresponds to the distance L and width W of the channel, and its W / L ratio is The larger the value, the larger the detection current. Therefore, a W / L ratio of 6 where W = 30 μm and L = 5 μm is conceivable as an example of a size that can ensure sufficient detection capability while reducing the size of the device (that is, reducing the size of the movable electrode). At this time, the space T _{vac under} the movable electrode is 3000 Å,
It is easy to fabricate a device with an oxide film thickness _Tox 250Å. Drain voltage (Vd = Vg-Vt) in measurement
Is the voltage range used in a normal MOSFET 5
Assuming V, the calculated output current in this case is about 1
It is 00 μA. This means that if the movable electrode is displaced by 0.1 Å, a detected current value of several nA will be obtained.
The resolution as the detection sensitivity of the AFM is preferably 0.
Since 1 Å, usually 1 Å is enough, if a resistor of 1 MΩ is connected in parallel to the operational amplifier in the subsequent stage, it can be obtained as a voltage of several mV, and sufficient detection is possible even for the noise level of the AFM itself and the measuring circuit in the subsequent stage. I have the ability.

Therefore, the configuration shown in FIG.
In order to obtain the detection capability by applying to the above, the space size (T _vac ) of the lower part of the movable electrode 106 is set such that the W / L ratio of the movable electrode 106 is 10 or less, which is generally used in MOSFET, and the substrate detection region 110 is stabilized. Therefore, if a protective layer (several hundred to several thousand Å) such as an oxide film is provided, it is necessary to set the thickness to 10 μm or less. Furthermore, when a high resolution (1 Å or less) is required, 1 μm or less is more preferable.

The current detecting means 102 is formed by a normal MO.
It can be formed by applying the SFET process, and further, the mechanical movable portion 103 on the upper side (the movable electrode 10 integrated
6 includes a substrate detection region 110 of the semiconductor substrate 101.
It suffices to stack a spacer layer on a portion other than the above and stack a mechanical movable portion on the upper surface of this spacer layer. A means for removing unnecessary portions of the spacer layer is required to make the mechanically movable portion movable. This is a method often used in micromechanics technology that applies semiconductor process technology, and it is possible to reduce the difference in the selection ratio of laminated materials. It can be easily formed by using the sacrificial layer process to be used. When the mechanical movable portion is made of a conductive material, it is integrated without distinction from the movable electrode. In this case, the above-mentioned reverse bias voltage to the movable electrode is applied to the electrically conductive mechanical movable portion.

A space region is secured by the spacer layer 107 between the semiconductor substrate 101 and the movable electrode 106.
In consideration of stabilizing the surface of the semiconductor substrate, particularly the substrate detection region 110, a thin oxide film may be provided on the surface as the channel protection layer 111 as shown in FIG. Also, sulfide,
The dangling bond on the surface of the semiconductor substrate may be stabilized by using a phosphorus compound or the like.

Further, in the present invention, in addition to the configuration as shown in FIG. 1, even if the detection reference changes due to the influence of temperature change or the like, this displacement can be compared and corrected. It is also possible to integrally provide a field effect transistor which is substantially equivalent to the quantity detecting means.

Further, in the present invention, by forming a plurality of the displacement detecting means on the same semiconductor substrate to form a multi-probe, it is possible to detect the forces acting from a plurality of points on the sample at the same time.

Although the displacement detecting means of the probe according to the present invention has been described above using the AFM as an example, the magnetic microscope of the present invention and the reproducing apparatus and the recording / reproducing apparatus of the present invention using the AFM have the same configuration. To act on.

[0025]

EXAMPLES Examples of the present invention will be described below.

Embodiment 1 An embodiment of the AFM equipped with the displacement detecting means as shown in FIG. 1 will be described.

First, a method of manufacturing the displacement detecting means in this embodiment will be described with reference to FIG. 2 is shown in FIG.
It is a conceptual diagram of a manufacturing process when seen from the same cross section as (b), and will be described below in order of process from (a) to (i) of the same drawing.

First, a thermal oxide film 201 of about 3000 Å is formed on the surface of a P-type semiconductor substrate 101 (FIG. 9A), and then polysilicon 202 is formed to a thickness of 4 μm by a thin film forming method.
After depositing about m (FIG. 2 (b)), the polysilicon layer was processed into the shape of the mechanical movable portion integrated with the movable electrode 106 (FIG. 2 (c)). Next, the source region 108 and the drain region 10
In order to form No. 9, a portion other than the source and drain regions was protected by a resist 203 (FIG. 3D), and then P (phosphorus) ions 204 were doped by an ion implantation method.
In this case, since the thermal oxide film was a little thick and the ion implantation was inefficient, a part of the thermal oxide film was lightly etched and then the ion implantation was performed to form the source region 108 and the drain region 109. ((E) of the same figure). Next, in order to obtain stable semiconductor characteristics of the source and drain regions, 950
Annealing was performed at a temperature of about 1000 ° C (not shown). Next, the source and drain wiring electrodes 112 and 11
In order to provide No. 3, a contact hole 205 was formed in a part of the source and drain regions ((f) in the figure), and then nickel wiring electrodes were formed on both sides ((g) in the figure). Next, in order to provide the probe 105 for detecting the atomic force on the mechanical movable portion, after applying the resist 206, the resist is removed in a columnar shape only in the portion where the probe is provided, and then as shown in FIG. Nickel was deposited by vapor deposition. At this time, the resist partially blocks the vapor deposition material to deposit nickel in a conical shape on the movable electrode 106, and then the resist 206 is removed to remove the probe 10.
5 was created. Finally, the thermal oxide film 2 created in FIG.
01 was removed by means of selective etching with other materials, and a space 207 was created under the mechanical movable portion and the movable electrode 106 which is the constituent portion (FIG. 7 (i)). Specifically, the oxide film was selectively removed with hydrofluoric acid.

The displacement detecting means according to the present invention is produced through the above steps. In this case, the channel region, which is the substrate detection region 110, is formed between the source region 108 and the drain region 109, and the distance between them is defined by the width of the movable electrode 106 formed in FIG. 2C.

Further, in this embodiment, the substrate detection area 1
A device having an oxide film on 10 was also prepared. The manufacturing method is shown as an example in the step of FIG.
After the steps up to (i) were similarly prepared, the whole was heat-treated to provide a thermal oxide film of about 250 Å.

The AF of the present embodiment constructed by using the displacement detecting means shown in FIG.
M will be described with reference to FIG. The sample 302 placed facing the displacement detecting means 301 prepared in the present embodiment is moved by the XYZ drive element 303 to the probe 105 on the cantilever, which is the mechanical movable portion 103 in the Z direction, by 1 n.
Approach up to a distance of m or less. Here, the cantilever bends due to the interatomic force acting between the probe 105 and the surface of the sample 302. In order to keep this amount of deflection constant (that is, to keep the interatomic force constant), a Z-direction feedback signal is generated. The feedback signal generated in the circuit 308 is applied to the XYZ driving element 303 via the amplifier circuit 310 to control the distance between the probe 105 and the sample 302.
Further, based on the scanning signal from the computer 305, the X-direction scanning signal circuit 306 and the Y-direction scanning signal circuit 307 respectively output the X-direction scanning signal and the Y-direction scanning signal to XYZ.
In addition to the drive element 303, the sample 302 is scanned in the XY two-dimensional directions relative to the probe 105. At this time, the depth and height of the unevenness can be detected from the Z-direction feedback signal for keeping the amount of bending of the cantilever constant according to the unevenness of the sample surface. The computer 305 acquires the two-dimensional distribution data of the unevenness of the sample surface and displays it on the display device 309.

As the material of the probe 105, Fe,
When a magnetic material such as Co or Ni is used, the magnetic domain surface structure of the magnetic sample can be observed as a magnetic force microscope by the same operation as described above.

The detected current in the actually manufactured device was somewhat lower than the calculated value due to manufacturing problems and the like, but an output voltage almost as designed was obtained by optimizing the resistance value in the subsequent stage. I was able to.

Embodiment 2 FIG. 4 shows a second embodiment of the present invention. As a part of the displacement detecting means of FIG.
It is an integrated type of FET. MOSFET 4
The part 01 will be described in detail with reference to the sectional view shown in FIG. 4B. 408 is a source region, 409 is a drain region,
410 is a channel region, 402 is a gate insulating layer, 412
Reference numerals 413 and 413 respectively denote source and drain wiring electrodes, and 406 denotes a gate. This fabrication method is manufactured by using basically the same process as in FIG.
Was created at the same time. However, in FIG. 2I, when the thermal oxide film 201 was etched to form the space 207 under the movable electrode 106, the thermal oxide film 402 under the gate 406 was protected by a resist so as to remain.

An AFM similar to that shown in FIG. 3 was constructed by using the displacement detecting means shown in FIG. 4 produced through the above steps. The configuration is basically the same as that of FIG. 3 except that a compensation circuit (not shown) is installed in the MOSFET 401 formed integrally, and thus the description thereof is omitted.

When such an AFM is used, the current detection means 102 is the same as the current detection means 102 in the displacement detection means except that there is a space portion, and the MOSFET 401 is equivalent.
Since the signal of this MOSFET is connected to a compensation circuit (not shown) and compared with an electric signal detected by a change in displacement amount, the absolute value of the detected signal can be compensated for from a change such as temperature drift. Detection accuracy is further improved,
It became reliable.

Embodiment 3 In this embodiment, the probe 10 of the displacement detecting means shown in FIG. 4 is used.
5, a recording voltage applying circuit 501 and a probe wiring electrode 502 are provided as means for applying a recording voltage between the probe 105 and the recording medium as shown in FIG. Using this, an AFM as shown in FIG. 3 was constructed to be a recording / reproducing device.

In this embodiment, as the sample 302, a recording medium capable of recording information by applying a voltage between the probe and the sample is used. As this recording medium, a recording medium that locally changes its shape by applying a voltage, an electric field, or a current as described above is used.

For example, a thin film of a metal or a metal compound, specifically Au, Al or Appl. Phys. Let
t. 51,244 (1987) (Staufer et al.)
Rh-Zr alloy or Te-Ti alloy, Te
A semiconductor thin film such as —Se alloy, Te—C, H-based material or amorphous silicon can be used. Also, A
ppl. Phys. Lett. 55,1727
(1989) (Albrecht et al.), An etching method by applying a voltage pulse to the surface of graphite can be used, and in the present embodiment, a thin film of Au was used. More specifically, the one in which Au of about 1,000 Å was provided on the cleaved mica by the vapor deposition method was used. Incidentally, the reproduction can be performed by the same operation as that of the previous embodiment.

Embodiment 4 FIG. 6 shows that the displacement detecting means according to the present invention has a horizontal configuration,
Further, the feeding mechanism of the semi-coarse physical quantity detection unit is integrally provided. Furthermore, a mechanical movable unit that converts a physical quantity received by the probe 105 as a physical quantity detection unit into a displacement,
In this embodiment, a cantilever elastic spring is used instead of a cantilever.

In FIG. 6, 101 is a semiconductor substrate and 10 is a semiconductor substrate.
2 is a current detecting means, 103 is a mechanical movable part, and 105 is a probe. Mechanical movable part 1 consisting of a cantilevered elastic spring
In 03, the movable electrode 106 is provided so as to be located in the vicinity of the current detection means 102. 701 is an elastic suspension, and 702 and 703 are a movable part and a fixed part which are comb-shaped electrodes. As shown in the cross section (FIG. 6 (b)) taken along the line AA of FIG. 6 (a), the entire structure has a structure that is hollow above the semiconductor substrate 101 except for the comb-shaped electrode fixing portion 703. The current detecting means 102 is composed of a source region 108, a drain region 109, and a substrate detecting region (channel) 110.

Among the above structures, the mechanical movable portion, the elastic suspension, the comb-shaped actuator and the like could be easily manufactured by using the processing technology of micromechanics applying the semiconductor process technology.

Further, the current detecting means 102 is basically the same as the technique for forming the source and drain regions described in the process diagram of FIG. However, in this structure, since the movable electrode is not on the upper surface of the source and the drain, the regulation between the channels was made by forming a resist pattern and ion-implanting the resist pattern. Finally, in order to create the movable electrode on the side surface, the side surface of the source and drain regions that will be the movable electrode side is shaved by a dry etching method, and at the same time, the deformed beam including the movable electrode portion, the comb-shaped electrode, the elastic suspension, etc. are processed. Movable electrodes were formed on the side surfaces of the source and drain regions.

In the current detecting means of this structure, the ion implantation width in the depth direction and the diffusion width by annealing are effective source and drain regions for the movable electrode located on the side surface, and the channel is the source and drain regions. It is a part sandwiched between the depth regions. Therefore, the channel width W is determined by the ion implantation depth and the diffusion width, but in the present embodiment, it was produced with W = 0.5 μm, and the channel length L was produced with L = 1 μm defined by the resist width in consideration of the diffusion width. .

Further, the comb-shaped electrode movable portion 702 can be moved by applying a voltage between the comb-shaped electrode fixed portion 703 and the comb-shaped electrode fixed portion 703, but the current detecting means is not electrically affected.
The portion 705 in contact with the current detecting means has a structure in which insulation treatment is performed partially.

When a voltage is applied to the fixed portion and the movable portion of the comb-shaped electrode of the displacement detecting means having the above-described structure, an electrostatic force is generated on the comb teeth on both sides, and the movable electrode is attracted to the fixed electrode side. The probe, which is the physical quantity detection unit, can be displaced in the direction of approaching the measured portion in conjunction with

The detection signal is 1 / of the current amount shown in the first embodiment.
At 12, the output was reduced by about one digit, but since it could be sufficiently detected as the signal of the AFM, there was no problem in the performance of the AFM.

As described above, the horizontal displacement detecting means A is used.
According to the FM, since the movable electrode and the current detection means can be placed at a position apart from the probe, a structure in which the probe projects from the device itself can be adopted, and the degree of freedom for bringing the probe close to the sample is expanded. .

[0049]

As described above, according to the present invention,
The following effects are obtained by having the current detection means that can directly read the mechanical displacement as a change in the amount of current.

Relative alignment between the mechanical moving part and the displacement amount detection system is no longer necessary, and the operability is improved.

Since the detection unit can be made small and has a simple structure, the entire apparatus can be further downsized and is less susceptible to the influence of disturbance, so that the detection resolution is improved and the AFM with higher accuracy and higher resolution can be obtained. It has become possible to measure the three-dimensional shape of the sample surface by.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of an AFM detection unit that best represents the features of the present invention.

FIG. 2 is a cross-sectional view for explaining the manufacturing process of the AFM detection unit according to the present invention shown in Embodiment 1.

FIG. 3 is a schematic configuration diagram of an atomic force microscope of the present invention.

FIG. 4 is a diagram showing an AFM detection unit according to the present invention shown in a second embodiment.

FIG. 5 is a diagram showing a displacement detection unit according to the recording / reproducing apparatus of the present invention shown in Embodiment 3;

FIG. 6 is a diagram showing a horizontal AFM detection unit according to the present invention shown in a fourth embodiment.

FIG. 7 is a schematic diagram of an optical lever method AFM that is a conventional example.

FIG. 8 is a schematic diagram of a conventional tunnel current method AFM.

FIG. 9 is a schematic view of an AFM of a capacitance detection method which is a conventional example.

[Explanation of symbols]

 101 semiconductor substrate 102 current detection means 103 mechanical movable part 105 probe 106 movable electrode 108 source electrode 109 drain region 110 substrate detection region (channel) 112 source wiring electrode 113 drain wiring electrode 201 thermal oxide film 202 polysilicon 203 resist 204 ion implantation 205 Contact hole 206 Resist 207 Space 301 Displacement detecting means 302 Sample 303 XYZ driving element 305 Computer 306 X direction scanning signal circuit 307 Y direction scanning signal circuit 308 Z direction feedback signal circuit 309 Display device 310 Amplifying circuit 401 MOSFET 501 Recording voltage applying circuit 502 Probe wiring electrode 701 Elastic suspension 702 Comb electrode movable part 703 Comb electrode fixing part 704 Fixing part 705 Insulating part 801 Probe 802 Cantilever 803 Lens 804 Two-divided photodiode 805 Lever holder 806 Sample 807 XYZ drive element 901 Conductive probe 902 Piezo element 1001 Electrode

Claims (4)

[Claims] 1. A mechanical movable part formed on a semiconductor substrate of a first conductivity type, a probe fixed to the mechanical movable part and detecting an interatomic force with an object to be measured, and an electrode. An atomic force microscope for detecting the displacement due to the atomic force by a change in conductivity between a pair of second conductivity type regions formed on the semiconductor substrate. 2. A mechanically movable portion formed on a first conductive type semiconductor substrate, a probe fixed to the mechanically movable portion and detecting a magnetic force with an object to be measured, and an electrode. A magnetic force microscope for detecting a displacement due to a magnetic force by a change in conductivity between a pair of second conductivity type regions formed on the semiconductor substrate. 3. A displacement of the probe corresponding to information recorded on a recording medium, comprising a mechanical movable part formed on a semiconductor substrate of the first conductivity type, a probe and an electrode fixed to the mechanical movable part. Is detected by a change in conductivity between a pair of regions of the second conductivity type formed on the semiconductor substrate. 4. A mechanically movable part formed on a semiconductor substrate of the first conductivity type, a probe and an electrode fixed to the mechanically movable part, and information is obtained by applying a voltage between the probe and the electrode. Recording is performed on a recording medium capable of recording, and the displacement of the probe corresponding to the information recorded on the recording medium is changed to a change in conductivity between a set of second conductivity type regions formed on the semiconductor substrate. Recording / playback device that detects by.