JP3076467B2 - Surface matching method and tunnel microscope and recording / reproducing apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cantilever type piezoelectric element driven by a reverse voltage effect, and more particularly to a surface matching method using the same and a recording / reproducing apparatus using the same.

[0002]

2. Description of the Related Art Recently, a semiconductor pressure sensor using a semiconductor as a mechanical structure against the background of semiconductor process technology,
Mechanical electric elements (micromechanics) such as semiconductor acceleration sensors and microactuators have come into the spotlight.

[0003] The features of such an element are that a small and high-precision mechanical mechanism part can be provided, and the element and an electric circuit can be integrated on a Si wafer because a semiconductor wafer is used. Further, by manufacturing based on a semiconductor process, improvement in productivity by batch processing of the semiconductor process can be expected. In particular, there is a cantilever type piezoelectric element using a piezoelectric thin film, which is capable of controlling very fine movement, so that it has an atomic level,
It is applied to a scanning tunneling microscope (hereinafter referred to as STM) that can directly observe the molecular level.

For example, S using a cantilever type piezoelectric element proposed by Kuwait of Stanford University or the like has been proposed.
TM probe (IEEE Micro Electro
Mechanical Systems, p 188 −
199, Feb, 1990). As shown in FIG. 12, a silicon membrane is formed by partially removing the back surface of the Si wafer 1 as shown in FIG. 12, a thin film of Al4 and ZnO5 is sequentially laminated on the front surface, and a bimorph cantilever is formed. By removing the silicon membrane and the protective layer (silicon nitride film) for etching the wafer surface by dry etching , a bimorph cantilever piezoelectric element for displacing the STM probe is manufactured. The tunnel current detecting probe 1 is attached to the free end of the upper surface of this cantilever, and a good STM image is obtained.

Further, an atomic force microscope (hereinafter abbreviated as AFM) to which the STM technique is applied has been developed [Binning
et al. Phys. Rev .. Lett. , 5
6,930 (1986)], as in the case of the STM, information on the surface unevenness can be obtained. In AFM, a cantilever (elastic body) that supports a probe brought close to the sample surface to a distance of 1 nanometer or less receives the force between the sample and the probe, and detects the force in reverse from the amount of deflection. Then, by scanning the sample surface while controlling the distance between the sample and the probe so as to keep this force constant, the three-dimensional shape of the surface is observed with a resolution of nanometer or less. A
FM does not require the sample to have conductivity unlike STM, and is capable of observing insulating samples, especially semiconductor resist surfaces and biopolymers in the order of atoms and molecules, and is expected to be widely applied. .

Further, the information on the atomic force of the AFM is detected and detected from the shift from the natural frequency of the cantilever in a state where the probe and the sample surface are brought close to a distance at which the atomic force can be generated. A method has been proposed (JP-A-63-309802).

On the other hand, by using the STM method, observation and evaluation of atomic order and molecular order of semiconductors or polymer materials, and fine processing (EE Ehrichs, 4th.
international Conference o
n Scanning Tunneling Micr
oscopy / spectroscopy, '89, S
13-3) and application of the recording / reproducing apparatus to various fields are being studied. In particular, application to computer calculation information and the like, for which a recording device having a large capacity is increasingly required, is being studied. This is because the progress of semiconductor process technology has led to a demand for a downsizing of a recording device with a downsizing of a microprocessor and an improvement in computational power.

For the purpose of satisfying these requirements, the shape of the surface of the recording medium is changed by applying a voltage from a converter comprising a probe for generating a tunnel current, which is provided on a driving means whose distance to the recording medium can be finely adjusted. An information processing apparatus has been proposed in which information is read and written by detecting a change in tunnel current due to a change in shape, and information is read out, and the minimum recording area is 10 ⁻⁴ μm ² (U
SP4575822).

SUMMARY OF THE INVENTION An object of the present invention is to provide an ST.
M or using a cantilever type piezoelectric element used for AFM to easily measure the distance between the sample surface and the cantilever type piezoelectric element.

The above has been an object of the present invention, and it is an object of the present invention to provide a positioning control method and a surface matching method and a recording / reproducing apparatus using the same.

[0010]

[0011]

A surface matching method according to the present invention includes at least one piezoelectric layer for changing a displacement in a plane perpendicular to a longitudinal direction of a cantilever, and an electrode for applying a voltage to the piezoelectric layer. A surface matching method using a cantilever type piezoelectric element, wherein at least two or more cantilevers are provided on the same substrate, displaced at a natural frequency of each cantilever, and a sample is formed by an admittance change of the piezoelectric element at the natural frequency. The distance between the substrate and the sample is measured by measuring the distance to the surface, and driving the plurality of measured distances so as to approximate or coincide with each other.

Further, a cantilever type piezoelectric element having at least one piezoelectric layer for changing the displacement of the cantilever in a plane perpendicular to the longitudinal direction and an electrode for applying a voltage to the piezoelectric layer is provided. A surface matching method used, wherein at least two or more cantilevers are provided on the same substrate, and distances from a sample surface are measured from frequency characteristics of admittance of the piezoelectric element, and the plurality of measured distances are approximated or coincide with each other. In this manner, the substrate and the sample are driven to perform the surface matching.

In the tunnel microscope and the recording / reproducing apparatus, each of the above-described positioning control method and surface matching method is used.

[0015]

The present invention is characterized in that the free end is displaced at a natural frequency or a frequency near the natural frequency using a cantilever type piezoelectric element. Since the energy can be minimized by vibrating at the natural frequency, the free end can be moved very much even with the same energy. However, when the free end touches the sample surface, the vibration mode changes, so that the admittance of the cantilever type piezoelectric element changes. Positioning by the piezoelectric element is performed while measuring this admittance. That is, it is a feature of the present invention that both the purpose of driving the cantilever type piezoelectric element and the purpose of measuring the distance can be achieved.

In the present invention, the distance between the free end of the cantilever type piezoelectric element and the sample can be measured without using optical means or a special sensor. In addition, the distance can be easily measured only by performing electrical measurement using the same cantilever type piezoelectric element as in the related art, and the device can be simplified and the IC can be easily formed.

[0017]

Next, an embodiment of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 shows a cantilever type piezoelectric element 1 and a sample 7 formed on a Si substrate 2. This cantilever type piezoelectric element 1 is fixed to another expanding and contracting piezoelectric element 3.

FIG. 2 shows this piezoelectric cantilever type piezoelectric element 1.
FIG. 3 is a diagram showing the configuration of FIG.

This is manufactured on a Si substrate by a normal IC manufacturing process and anisotropic etching of silicon. An insulating layer 8 and a lower gold electrode 9 on a Si substrate 2;
nO piezoelectric layer 10, middle metal electrode 11, ZnO piezoelectric layer 1
2. The bimorph cantilever type piezoelectric element has a structure in which the upper gold electrode 13 is laminated in this order. At this time, when the upper electrode 13 and the lower electrode 9 are short-circuited and a voltage is applied between the upper electrode 13 and the lower electrode 9, the free end of the cantilever type piezoelectric element 1 bends due to the inverse piezoelectric effect.

The displacement at this time is expressed by the following equation.

ΔZ / ΔV = [3L^Twod₃₁Y_Z(B^Two-A^Two)] / ｛4 (ba) [YM (a^Three-B ^Three + C^Three) + YZ (C^Three-B^ThreeL) is the length to the free end of the cantilever, YM
Is the Young's modulus of the electrode thin film, YZ is the Young's modulus of the piezoelectric thin film,
2 × a is the thickness of the middle electrode, ba is the thickness of the piezoelectric body, and cb is the thickness of the upper and lower electrodes.

The primary natural frequency Fr at this time is expressed by the following equation.

Fr = 0.162 × (E / ρ) ^1/2 × t / L ² (2) where E is the Young's modulus of the cantilever, and ρ is the density of the cantilever. t is the thickness of the cantilever.

For example, if the length of the cantilever is 300 μm
m, the thickness of the middle electrode is 0.2 μm, and the thickness of the piezoelectric body is 0.3
μm, the thickness of the upper and lower electrodes is 0.1 μm, d ₃₁ = 4.0 pC
/ N, and the Young's modulus of gold is 7.8 × 10 ¹⁰ N / m
^2. The density ρ of the cantilever is 1.11 × 10 ⁴ Kg / m ³
Then, ΔZ / ΔV = 1.59 μm / V Fr = 6470 Hz.

Next, when the bimorph type cantilever type piezoelectric element 1 is driven by the AC power supply 5 shown in FIG. 1, a bending motion starts. In this case, the voltmeter 6 simultaneously, piezoelectric
The admittance of the device can also be measured.
The alternating current is such that a signal of V0sinωt is generated, and the amplitude and the frequency can be changed. The piezoelectric element 3 is a variable DC power supply 4.
Thus, the distance of the cantilever type piezoelectric element in the Z direction can be controlled.

If the cantilever type piezoelectric element is sufficiently far away from the sample 7 (does not contact the sample), the frequency response of the bending motion displacement is shown in FIG.
As shown in FIG. In other words, the frequency band (A in the figure) sufficiently lower than the natural frequency has the displacement calculated by the equation (1). At this time, the frequency at which the maximum displacement (B in the figure) is obtained coincides with the frequency calculated by equation (2). At the same time, when the admittance of the cantilever type piezoelectric element is measured by the circuit shown in FIG. 1, the result is as shown in FIG. 3B.

This is because when the drive frequency and the natural frequency of the cantilever match, the energy is minimized, and the maximum value of the admittance (B in the figure) matches the natural frequency described above.

FIG. 4 is a graph showing the applied voltage amplitude dependence of the displacement of the tip of the cantilever type piezoelectric element 1 at the points A and B. At the point A lower than the natural frequency, the equation (1) is used. Is the displacement amount. On the other hand, when driven at the natural frequency (point B), a much higher displacement can be obtained. For more information,
An amount of displacement approximately twice the mechanical Q value is obtained. This mechanical Q value is determined by the shape, material, etc., and ranges from several tens to several thousands.

Next, in FIG. 1, a voltage is applied to the piezoelectric element 3 from the DC power supply 4 to bring the tip of the cantilever type piezoelectric element into contact with the sample 7. The frequency dependence of the admittance at this time is as shown in FIG. It is not possible to see the local maximum value seen at the natural frequency point B described above. This is because, as shown in FIG. 8, the tip of the cantilever type piezoelectric element 1 comes into contact and changes from a cantilever state to a state close to a doubly supported state, thereby changing the natural frequency.

From the above, by monitoring the change in admittance, it can be easily determined whether or not the tip of the cantilever type piezoelectric element 1 has contacted the surface of the sample 7.

Next, a positioning control method will be described.

In FIG. 1, a cantilever type piezoelectric element 1
Is adjusted to such an extent that the piezoelectric element 3 does not contact the surface of the sample 7. After that, the cantilever is bent at the natural frequency by the AC power supply 5. For example, if the length of the cantilever is 30
0 μm, the thickness of the middle electrode is 0.2 μm, the thickness of the piezoelectric body is 0.3 μm, the thickness of the upper and lower electrodes is 0.1 μm, d ₃₁ = 4.
Assuming 0 pC / N and a mechanical Q value of 70, ΔZ / ΔV is as follows.

ΔZ / ΔV = 1.59 μm / V (at a natural frequency or less) ΔZ / ΔV = 111 μm / V (at a natural frequency) At this time, the dependence of admittance on the applied voltage is measured. 6 is obtained.

Since the admittance changes when the free end of the cantilever comes into contact with the sample surface, the distance between the stationary point at the tip of the cantilever and the sample surface is known if the applied voltage and the amount of displacement at the natural frequency are known. Can be easily measured.

FIG. 7 is a plot of the frequency at which the maximum value of admittance is obtained when the cantilever type piezoelectric element 1 is gradually approached to the sample 7 using the piezoelectric element. A significant frequency shift is seen when they come into contact. According to this method as well, it is possible to accurately confirm whether the vehicle is in the contact state or the non-contact state, and accurate positioning can be performed.

As described above, the method of positioning the cantilever type piezoelectric element by bending it at the natural frequency and the method of driving the cantilever type piezoelectric element close to the sample surface by driving from the outside, In any of the positioning methods, the positioning can be performed with high accuracy.

[Embodiment 2] In this embodiment, a surface matching method using the cantilever type piezoelectric element shown in FIG. 1 will be described.

FIG. 9 shows two cantilever type piezoelectric elements 1.
Is formed on a Si substrate 2. The sample 7 is held by a plurality of Z-direction driving elements 102 and can change the Z-axis and the tilt. These are the support 101
It is fixed at. The plurality of cantilever type piezoelectric elements 1 are connected to the actuator drive circuit 103 and the admittance detection circuit 104, respectively, and are configured so that the admittance change at the natural vibration frequency and the natural frequency can be measured by the Z-direction position control circuit 105. ing. Z
The direction drive circuit 106 drives the plurality of Z-direction drive elements 102, and is feedback-controlled by a signal from the Z-direction position control circuit 105.

First, the two cantilever type piezoelectric elements 1 are bent by the actuator drive circuit 103 at a natural frequency. At this time, the distance from the surface of the sample 7 is measured by the admittance detection circuit 104 in the same manner as in the first embodiment. As a result, the Z-direction drive circuit 106 operates the Z-direction drive element 102 so that the distance between the two cantilever-type piezoelectric elements 1 and the sample 7 is equal or approximated by the Z-direction position control circuit 105. In such a method, the two cantilever-type piezoelectric elements 1 and the surface of the sample 7 can be equidistant.

Also, the frequency dependence of two admittances can be measured and their distances can be matched or approximated. In this way, good alignment can be performed in both measurement methods. For example, cantilever type piezoelectric element 1
When there are a plurality of (three or more), good surface matching can be performed by adjusting the measurement results of three or more cantilever-type piezoelectric elements so as to match or approximate.

Embodiment 3 In this embodiment, an STM device using the cantilever type piezoelectric element shown in FIG. 1 will be described.

FIG. 10 is a diagram showing the configuration of the STM device of this embodiment. A Z-direction drive element 102 is mounted on a support 101.
And an XY scanning mechanism 110 are installed, and the sample 7 as an observation object is movable in the XY directions. The cantilever-type piezoelectric element 1 formed on the Si substrate 2 is fixed at a position facing the sample by a support 101, and a probe 108 is formed at the tip of the cantilever. The XY scanning mechanism 110 is driven by the XY driving circuit 107,
The direction drive element 102 is driven by a Z-direction drive circuit 106. A bias voltage is applied between the sample 7 and the probe 108 by a voltage application circuit 113, and a tunnel current flowing between them is detected by a tunnel current detection circuit 109. In the Z direction, feedback control is performed by the actuator driving circuit 103 so that the value of the tunnel current flowing between the sample 7 and the probe 108 is constant. All of these circuits are integrally controlled by the microcomputer 112, and the observation result is displayed. ST configured as above
In the M apparatus, first, the distance between the surface of the sample 7 and the probe 108 is measured by measuring the admittance of the cantilever type piezoelectric element 1 using the same method as in the second embodiment. At this time, the displacement amount of the cantilever type piezoelectric element 1 used in this embodiment is ΔZ / ΔV = 1.59 μm / V (when the natural frequency is equal to or lower) ΔZ / ΔV = 111 μm / V (when the natural frequency Therefore, when performing a high-speed STM operation, it is suitable to perform movement in the Z-axis direction by driving only the cantilever type piezoelectric element 1. In this case, since the cantilever type piezoelectric element 1 is driven at a frequency lower than the natural frequency, the sample 7 and the probe 108 are positioned so as not to be 1 μm. Thereafter, Z-axis driving is performed at a frequency equal to or lower than the natural frequency.

By performing the above driving, the distance between the sample 7 and the probe 108 can be easily measured. In other words, by combining the measurement of the distance by detecting the tunnel current (several nm or less) and the measurement of the distance by the admittance of the cantilever type piezoelectric element 1 (several tens μm or less), the unevenness on the order of several tens μm from the atomic level can be obtained. Information can be obtained, and measurement over a wide range of distances can be performed with high accuracy.

Further, in the STM, a phenomenon that a tunnel current is difficult to flow due to contamination at the tip of the probe is often observed even though the probe is in contact with the sample. In such a case, erroneous information is often obtained as an STM image. However, according to the present invention, whether or not the probe is in contact can be easily determined.
This has the advantage that the state of the probe can be monitored in advance and a more accurate STM image can be obtained.

[Embodiment 4] In this embodiment, a recording / reproducing apparatus to which the above-described positioning method and surface matching method are applied will be described.

FIG. 11 is a diagram showing the configuration of the recording / reproducing apparatus of this embodiment. Since the present embodiment uses the STM configuration shown in FIG. 10, the same components are denoted by the same reference numerals as in FIG.

Inside the support 101, a Z-direction drive element 102 and XY mounted on the Z-direction drive element 102 are mounted.
A scanning mechanism 110 is provided . XY scanning mechanism 110
On the substrate 111, an electrode 116 and a recording medium 117 are provided. XY scanning mechanism 110 is driven by the XY direction driving circuit 107, the writing of the recording bit by the recording voltage applying circuit 114 to the recording medium 117, or reproducing voltage application times
A pulse voltage for reading the recording bit is applied by the path 115. The recording medium 1 on the XY scanning mechanism 110 is driven by driving the Z-direction drive element 102 by the Z-direction drive circuit 106.
17 and the Z axis can be adjusted.

[0049] Si is the substrate 2 used those 10mm square, a plurality of cantilevered piezoelectric elements on the Si substrate 2 1
Are attached to the support 101 in a direction facing the recording medium 117. A probe 108 is provided at a free end of each cantilever type piezoelectric element 1. The tunnel current flowing through each probe 108 individually is detected by a current detection circuit 109. Each cantilever is driven by an actuator drive circuit 103. The admittance is also detected by the admittance detection circuit 104 at the time of driving.
Is used to control the positions of the probe 108 and the recording medium 117. All of the above circuits are controlled by the microcomputer 112.

As the recording medium 117, an organic recording layer laminated on an Au thin film (2500 °) epitaxially grown on a mica substrate was used. As the organic recording layer, an LB film of squarylium-bis-6-octiazulene (1
Layer). The LB film was formed by the method disclosed in JP-A-63-161552.

First, surface matching is performed using the method described in the second embodiment so that the position of each cantilever type piezoelectric element 1 is approximated or equivalent to the recording medium 117.
At this time, the probes 1 on all the cantilever type piezoelectric elements 1
It is necessary to adjust the distance between the recording medium 107 and the recording medium 107 so as to fall within the range of the displacement (stroke ± 1 μm) equal to or less than the natural frequency of the cantilever. With this adjustment, all the cantilever type piezoelectric elements 1 can detect the tunnel current by following the unevenness of the recording medium 117 due to the reverse voltage effect. As described above, positioning and surface matching are performed.

Next, a recording / reproducing method in this embodiment will be described.

First, one of the probes 108 is connected to the anode side,
A pulse voltage of 5 V was applied with 16 as the cathode side to generate a recording bit. Next, when a voltage of 1 V was applied between the probe 108 and the Au thin film while the distance between the probe 108 and the recording layer was held by the cantilever type piezoelectric element 1, a tunnel current was measured. It was confirmed that a current flowed, and that a recording bit was formed.

Next, recording was continuously performed using the recording / reproducing apparatus described above. Recording was performed by sequentially driving a plurality of cantilevers at a speed of 5 msec per bit with respect to one cantilever, and the recorded contents were checked. As a result, it was found that an error occurred in each recording bit by the plurality of cantilever type piezoelectric elements 1. I couldn't.

[0055]

According to the surface matching method of the present invention, the surface can be accurately aligned , and in the tunnel microscope and the recording / reproducing apparatus using each of these methods, the probe can be controlled well. There is an effect that can be done.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining a position control method performed in an embodiment of the present invention.

FIG. 2 is a sectional view showing a configuration of a cantilever type piezoelectric element 1 in FIG.

FIGS. 3A and 3B are diagrams showing a relationship between displacement-frequency change and admittance-frequency in a free state of the cantilever type piezoelectric element 1. FIGS.

FIG. 4 is a view showing a displacement characteristic of the cantilever type piezoelectric element 1.

FIG. 5 is a diagram showing admittance when the cantilever type piezoelectric element 1 is in contact.

FIG. 6 is a diagram showing a change in admittance due to contact of the cantilever type piezoelectric element 1.

FIG. 7 is a diagram showing a change in natural frequency due to contact of the cantilever type piezoelectric element 1.

FIG. 8 is a schematic diagram showing a contact state of the cantilever type piezoelectric element 1.

FIG. 9 is a view showing a state of surface matching which is an object of the present invention.

FIG. 10 is a diagram showing a configuration of an embodiment of a tunnel microscope according to the present invention.

FIG. 11 is a diagram showing a configuration of an embodiment of a recording / reproducing apparatus according to the present invention.

FIG. 12 is a diagram showing a structure of a probe used for STM.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Cantilever type piezoelectric element 2 Si substrate 3 Piezoelectric element 4 DC power supply 5 AC power supply 6 Voltmeter 7 Sample 101 Support 102 Z-direction drive element 103 Actuator drive circuit 104 Admittance detection circuit 105 Z-direction position control circuit 106 Z-direction drive circuit 107 XY direction drive circuit 108 Probe 109 Current detection circuit 110 XY scanning mechanism 111 Substrate 112 Microcomputer 113 Voltage application circuit 114 Recording voltage application circuit 115 Reproduction voltage application circuit 116 Electrode 117 Recording medium

Continued on the front page (72) Inventor Ryo Kuroda 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Yoshiyuki Suzuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor: Yu Nakayama 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-6-137856 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G01B ^7/ 00-7/34 G01B 21/00-21/32 G11B 9/00

Claims (5)

(57) [Claims] 1. A cantilever type piezoelectric element comprising at least one piezoelectric layer for changing a displacement of a cantilever in a plane perpendicular to the longitudinal direction, and an electrode for applying a voltage to the piezoelectric layer. A plane matching method to be used, wherein at least two or more cantilevers are provided on the same substrate, each cantilever is displaced at its natural frequency, and the distance from the sample surface is changed by the admittance change of the piezoelectric element at the natural frequency. A surface matching method, wherein each of the substrates is measured and driven so that the plurality of measurement distances are approximated or coincide with each other to perform the surface alignment between the substrate and the sample. 2. A cantilever-type piezoelectric element comprising at least one piezoelectric layer for changing a displacement of a cantilever in a plane perpendicular to a longitudinal direction thereof, and an electrode for applying a voltage to the piezoelectric layer. A plurality of cantilevers are provided on the same substrate, and distances from the sample surface are measured based on admittance frequency characteristics of the piezoelectric element, and the plurality of measured distances are approximated or coincide with each other. Wherein the substrate and the sample are driven so as to perform surface matching. 3. A cantilever type piezoelectric element comprising at least one piezoelectric layer for changing a displacement in a plane perpendicular to the longitudinal direction of the cantilever, and an electrode for applying a voltage to the piezoelectric layer, a substrate on which the cantilever is provided at least a plurality, and a probe attached respectively to the free end of the cantilever type piezoelectric element, the sample was placed on the cantilevered piezoelectric element and the counter position, through the Fukahari Outputs information on sample surface irregularities
In that tunnel current microscope, tunneling, characterized by scanning cantilever type piezoelectric element surface of the sample after the surface alignment between cantilever piezoelectric element and the sample using the method according to claim 1 or claim 2 microscope. 4. A cantilever-type piezoelectric element comprising at least one piezoelectric layer for changing a displacement in a plane orthogonal to a longitudinal direction of the cantilever, and an electrode for applying a voltage to the piezoelectric layer; A probe attached to a free end of a cantilever type piezoelectric element, a sample is disposed at a position facing the cantilever type piezoelectric element, and a recording / reproducing apparatus which performs recording or reproduction on a sample surface via a deep needle, The cantilever type piezoelectric element is displaced at its natural frequency.
Admittance change of the cantilever type piezoelectric element
Means for measuring the distance from the surface of the recording medium, and a cantilever type pressure on the surface of the recording medium based on the measurement result.
Means for scanning with an electric element . 5. A cantilever-type piezoelectric element comprising at least one piezoelectric layer for changing a displacement in a plane perpendicular to a longitudinal direction of the cantilever, and an electrode for applying a voltage to the piezoelectric layer, A substrate provided with at least a plurality of cantilevers, and a probe respectively attached to a free end of the cantilever type piezoelectric element, a recording medium disposed at a position facing the cantilever type piezoelectric element, and a deep needle interposed therebetween. the recording and reproducing apparatus for recording or reproducing on the recording medium surface, according to claim 1 or claim 2 cantilevered piezoelectric surface of the recording medium after the surface alignment between cantilever piezoelectric element and the recording medium using the method described in A recording / reproducing apparatus, wherein scanning is performed by an element.