JP3450349B2 - Cantilever probe - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cantilever (cantilever beam ) type probe used for a tunnel current detecting device, a scanning tunneling microscope or the like.

[0002]

2. Description of the Related Art In recent years, a scanning tunneling microscope (hereinafter referred to as ST
(Abbreviated as M) was developed (G. Binnig et a
l. , Phys. Rev. Lett. 49 (1982)
57), it has become possible to measure a real space image with remarkably high resolution (nanometer or less) regardless of whether it is a single crystal or a non-crystal. Such an STM utilizes that a tunnel current flows when a voltage is applied between a metal probe (probe) and a conductive substance to bring them close to a distance of about 1 nm. Since this current is very sensitive to changes in the distance between the two and changes exponentially, it is possible to observe the surface structure in real space with atomic resolution by scanning the probe so that the tunnel current is kept constant. it can. This ST
Although the analysis using M is limited to the conductive material, it has begun to be applied to the structural analysis of the insulating film thinly formed on the surface of the conductive material. Further, since the above-mentioned devices and means use the method of detecting a minute current, they have an advantage that they can be observed with low power without damaging the medium. Further, since it can be operated in the atmosphere, it is expected to have a wide range of applications of STM. In particular, as proposed in JP-A-63-161552 and JP-A-63-161553, practical application as a high-density recording / reproducing apparatus is being actively promoted. This is for recording by changing the voltage applied between the probe and the recording medium by using a probe similar to the STM, and the recording medium shows a switching characteristic having a memory property in the voltage-current characteristic. A thin film layer of a material such as chalcogenide or a π-electron organic compound is used. On the other hand, reproduction is performed by changing the tunnel resistance between the recorded area and the non-recorded area. As a recording medium using this recording method,
Recording and reproduction are possible even if the surface shape of the recording medium changes depending on the voltage applied to the probe.

Further, from the viewpoint of improving the function of the recording / reproducing system, in particular, increasing the speed, a large number of probes are selectively driven,
It is necessary to detect the tunnel current. For that purpose, each probe itself must move in at least two dimensions. As a probe that satisfies this, a cantilever-type STM probe made of a piezoelectric bimorph is manufactured by processing a silicon substrate. (T.
R. Albrecht et al. , "Microfa
brication of Integrated S
canning Tunneling Microsc
ope ", Proceedings of 4th I
international Conference o
n STM / STS S10-2 July 9-1
4, 1989). FIG. 13 shows a perspective view thereof. Piezoelectric body 2
01 and the electrode 202 are composed of ZnO and Al, respectively. Figure by applying an appropriate bias between the electrodes 1
As shown in 4 (a), (b), and (c), driving in the X, Y, and Z axis directions is possible.

Further, as a means for forming a cantilever type probe, a semiconductor manufacturing process technology is used, and a processing technology (KE Peterso) for forming a fine structure on one substrate.
n, “Silicon as a Mechanicala
l Material ”, Proceedings o
f the IEEE, vol70, P420, 198
The STM constructed by utilizing 2) is disclosed in JP-A-61-206.
Proposed in Japanese Patent Publication No. 148. This is made by using single crystal silicon as a substrate, and a direction parallel to the substrate surface (X
A parallel spring that can be moved slightly in the Y direction) is formed, and a tongue-shaped part with a cantilever (cantilever) structure in which a probe is formed is further provided in the movable part, and an electric field is applied between the tongue-shaped part and the bottom part to provide static electricity. It is configured to be displaced in a direction (Z direction) perpendicular to the substrate surface by electric power. Also, JP-A-62-2811
Japanese Unexamined Patent Publication No. 38-38 describes a storage device including a transducer array in which a plurality of tongue-shaped portions are arranged in the same manner as that disclosed in Japanese Patent Laid-Open No. 61-206148. Further, a cantilever type STM probe made of a piezoelectric bimorph is manufactured by processing a silicon substrate.
(S. AKAMINE, et al. “A Plana
r Process Microfabrica
tion of Scanning Tunnelin
g Microscope ”, Sensors and
Actuators, A21-A23 (1990) 9
64-970. )

[0005]

However, the conventional cantilever type probe made of the piezoelectric bimorph has the following problems. (A) The piezoelectric body ZnO absorbs moisture in the air, etc., and its characteristics change or deteriorate. Further, a piezoelectric body such as PZT requires a temperature of 500 ° C. or higher for film formation or heat treatment, and is not suitable for producing a probe integrated with an IC. (B) Piezoelectric materials such as ZnO and PZT have a columnar structure, so that the thin film has low mechanical properties and thus has low durability. (C) Increasing the piezoelectricity of the piezoelectric bodies ZnO, PZT, etc. increases the internal stress, so that the warp of the cantilever increases and its variation also increases. (D) A large amount of displacement in the Y direction cannot be taken. In addition, the bimorph drive in the Y direction is likely to be twisted.

An object of the present invention has been made in view of the above-mentioned problems of the prior art, the productivity of the cantilever type probe, improves the reproducibility, has been reliability, excellent stability scanning tunneling The purpose is to realize a microscope and an information processing device.

[0007]

The above problems can be solved by the present invention described below.

That is, according to the present invention, a displacement element formed in a cantilever shape on a substrate and arranged at a free end of the displacement element.
A cantilever-type probe having a probe , the displacement element being arranged symmetrically with respect to the support.
Formed by at least one pair of heating element layers, which are displaced by thermal driving of the heating element layers, expand and contract by applying the same current to all the heating element layers,
Cantilevered flop, characterized in that the displacement in the direction perpendicular to the direction of該伸contraction whereas the by passing current only
A lobe , preferably the displacement element comprises a pair of emitters.
Heat body layers are provided on the upper and lower surfaces of the support, respectively, and a pair of upper surfaces are provided.
The current is applied only to the heating element layer or the pair of heating element layers on the lower surface.
By a the cantilever probe, characterized in that displaced in a direction perpendicular to the substrate surface, further having an electrode on the lower surface and the substrate surface of the support, the substrate surface by electrostatic forces and vertical The cantilever-type probe is characterized by displacing in various directions , preferably
Is the expansion and contraction of the displacement element and the displacement in the direction orthogonal to it.
The two-dimensional scanning of the probe by
The above cantilever probe .

[0009]

[0010] The present invention, the present onset Ming cantilever <br/> over probe is integrated cantilever probe, characterized in that a plurality arranged on the same substrate.

Next, the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view showing an example of a cantilever type probe using the cantilever type displacement element of the present invention. This is manufactured by using a normal IC process technology and a Si anisotropic etching technology using a Si substrate. 2A is a sectional view taken along the line AA ′ of FIG.
(B) is a BB 'sectional view. There is a cantilever whose one end is fixed to the Si substrate 1, and the cantilever is formed of a support 2 made of non-doped PolySi and two pairs of heating element layers 3, 3 ′, 4, 4 ′. The heating element layer is doped PolySi and has a p-type or n-type conductivity type. Further, a probe 5 for detecting a tunnel current and an electrode 6 for extracting the current are formed on the cantilever. Although not shown, a circuit for selectively driving the cantilever and detecting / amplifying the tunnel current is also arranged on the same surface as the Si substrate 1. Because the cantilever support 2 partially expands and contracts in the X-axis direction by controlling the current of the two pairs of heating element layers 3, 3 ′, 4, 4 ′, as in the conventional piezoelectric bimorph, X, Y, It is possible to drive on the Z axis. That is, as shown in FIG. 1, the two pairs of heating element layers 3, 3 ′, 4, 4 ′ are configured symmetrically with respect to the support 2 of the cantilever, so that the same current is applied to all heating element layers, for example. As a result, driving can be performed in the X-axis direction, in the Y-axis direction by applying a current only to the heating element layers 3, 4 and in the Z-axis direction by applying a current only to the heating element layers 3, 3 '.

FIG. 3 is a perspective view showing another example of a cantilever type probe using the cantilever type displacement element of the present invention. This is also manufactured by using a normal IC process technology using a Si substrate. FIG. 4A shows FIG.
4B is a cross-sectional view taken along the line BB ′ in FIG. There is a cantilever whose one end is fixed to the Si substrate 1 via a SiO ₂ layer 31, and the cantilever is formed of a support 2 made of non-doped PolySi and a pair of heating element layers 3 and 3 ′. The heating element layer is doped Pol
It is ySi and has p-type or n-type conductivity. Further, a probe 5 for detecting a tunnel current and an electrode 6 for extracting the current are formed on the cantilever. An electrode layer 32 is provided on the lower surface of the support layer 2 and faces the electrode 33 on the Si substrate 1 with a gap. Although not shown, a circuit for selectively driving the cantilever and detecting / amplifying the tunnel current is also arranged on the same surface as the Si substrate 1.

Since the support 2 of the cantilever partially expands and contracts in the X-axis direction of FIG. 3 by controlling the current of the heating element layers 3 and 3 ', it can be driven in the Y-axis direction. Next, when an appropriate bias is applied between the lower surface electrode 32 of the cantilever and the electrode 33 on the Si substrate 1 facing the lower surface electrode 32, it is possible to drive in the Z-axis direction by the electrostatic force between the electrodes.

[0015] as shown in FIG. 1 or FIG. 3, the onset Akira
In the cantilever type probe using the cantilever type displacement element, since the piezoelectric film is not used, the characteristics are not changed or deteriorated due to absorption of moisture in the air.
Further, since it does not have a columnar structure like the conventional piezoelectric film, it is possible to enhance mechanical strength and durability.
Furthermore, the internal stress at the time of forming the element is reduced, and the warp of the cantilever can be reduced.

[0016]

EXAMPLES Examples of the present invention will be described below.

[0017] EXAMPLE 1 In this example, to prepare a cantilever type probe using the onset bright cantilever type displacement element shown in FIG. This manufacturing method will be described with reference to FIG. First, (100) n
Forming a Si nitride 81 as a mask layer of Si anisotropic etching in a later step in the LPCVD apparatus type Si substrate 1 (see FIG. 5 (a)), then forming a non-doped PolySi in LPCVD apparatus resist implanting B or P as a dopant patterning after the ion implantation apparatus, to form the heat generating layer 3, 3 '(see Figure 5 (b)). Similarly, using an LPCVD apparatus, undoped PolyS
i implanting B or P in the resist after patterning implantation device is formed thicker than before, to form the heat generating layer 4, 4 '(see FIG. 5 (c)). Then, a tunneling current detection probe 5 and the electrodes 6 of the tunnel current drawer, patterning the back surface of the Si nitride 81 performs Apertures for cantilever formed (see FIG. 5 (d)). Finally, the Si substrate 1 by anisotropic etching is etched to remove the Si nitride 81 (see FIG. 5 (e)
reference). There are various patterns of the heating element layers 3, 3 ', 4, 4', but for example, they can be set as shown in FIGS. 6 (a) and 6 (b).

The cantilever is driven by the heating element layer 3,
Since 3 ', 4, 4'are configured symmetrically with respect to the support 2 of the cantilever, for example, by applying the same current to all the heating element layers, in the X direction of FIG.
It can be driven in the Y direction by passing a current only through it, and can be driven in the Z direction by passing a current through only the heating element layers 3 and 3 '.

Next, a scanning tunnel microscope using the above cantilever type probe will be described.

FIG. 7 is a schematic view of a scanning tunneling microscope of this embodiment according to the present invention. 101 is a silicon substrate on which the cantilever type probe 102 is formed, 105
Reference numeral 104 indicates a coarse movement piezoelectric element that drives the silicon substrate 101 in the Z direction, 114 indicates an approach mechanism that brings the Z direction coarse movement piezoelectric element 105 and the cantilever type probe 102 close to the sample surface, and 103 indicates a conductive sample for surface observation. Is an XY fine movement mechanism for finely moving the sample 103 in the XY directions.

The operation of the above scanning tunneling microscope will be described below. The approach mechanism 114 is composed of a Z-direction moving stage, and the probe of the cantilever type probe 102 is brought close to the surface of the sample 103 within the stroke of the Z-direction coarse-movement piezoelectric element 105 manually or by a motor. At that time, the degree of approach was visually observed using a microscope, or automatic feeding was performed by a motor while the cantilever type probe 102 was servoed, and it was detected that a tunnel current flowed between the probe and the sample. Stop approaching at that point. At the time of observing the sample 103, the tunnel current flowing between the sample 103 and the probe to which the bias voltage is applied by the bias circuit 106 is detected by the tunnel current detection circuit 107, and the average of the probe and the sample surface is passed through the Z-axis direction servo circuit 110. Z the cantilever type probe 102 so that the distance becomes constant.
You are controlling in the direction. In this state, the cantilever type probe 102 is scanned in the XY direction by the XY position control circuit 109 to detect a tunnel current changed due to minute unevenness on the sample surface, and the tunnel current is taken into the control circuit 112 and synchronized with the XY scanning signal. If processed, an STM image in constant height mode can be obtained. The STM image is displayed on the display 113 after being subjected to image processing, such as processing by a two-dimensional FET. At this time, since the crosstalk in the Z direction of the cantilever probe 102 is small, it cannot be followed when the temperature drift of the device, the unevenness of the surface of the sample 103, and the inclination are large, and therefore the piezoelectric element 105 for coarse Z direction movement.
Is used to feed back the signal of the tunnel current detection circuit 107 through the Z-direction coarse movement drive circuit 111 in the range of about 0.01 to 0.1 Hz to control so as to follow a large movement in the Z direction. When changing the observation location, the XY fine movement mechanism 104 on the sample side is moved in the XY directions by the XY fine movement drive circuit 115 so that the probe comes to a desired area for observation.

With this apparatus, the surface of the sample 103 was observed using a HOPG (graphite) plate. A direct current voltage of 200 mV was applied between the probe and the sample by the bias circuit 106, the probe was scanned along the sample in this state, and the surface was observed from the signal detected by the tunnel current detection circuit 107. Scan area is 0.05μ
When observed with m × 0.05 μm, it was possible to obtain a good atomic image, the operation based on the STM principle was confirmed, and the surface observation operation was confirmed.

Next, this onset Ming cantilever probe shown in FIG. 1, with integrated cantilever probe in which a plurality fabricated on the same substrate, an information processing apparatus will be described. FIG. 8 shows a schematic diagram of the integrated cantilever type probe formed on the same substrate. A silicon substrate is used as the substrate 1, and integrated by an X-shift register 117, a Y-shift register 118, a circuit portion 119 including an electrostatic capacitance, a switch element, an amplifier, etc., a probe electrode 5, a cantilever 120, a matrix wiring 121, and the like. A cantilever type probe is constructed. 122 is a bonding pad for connecting a signal line. This bonding pad is arranged on one side of the substrate 1 or on two opposite sides. As a result, the recording medium is moved in the direction parallel to the bonding pad to perform recording / reproduction.

In the embodiment of FIG. 8 , the driving element is integrally formed by using the silicon substrate, but this is not limited to the silicon substrate, and a wafer in which a silicon thin film is epitaxially grown on a sapphire substrate is used. It may be used, and further, a semiconductor layer and a substrate of any form such as a polysilicon thin film grown on a quartz substrate, a solid phase epilayer, etc. can be used.

FIG. 9 shows a block diagram of an information processing apparatus using the integrated cantilever type probe. 123
Is an integrated cantilever type probe, 124 is an actuator for scanning the integrated cantilever type probe 123 in the XY plane, and 125 is a scanning circuit. Reference numeral 126 is a recording medium, 127 is an actuator for correcting the inclination of the recording medium 126 so that the probe electrodes 5 of the integrated cantilever type probe 123 are evenly installed on the recording medium 126, and 128 is an inclination correction circuit. 129 is a structure that supports these members.

The integrated cantilever type probe 123 is controlled by the probe head control circuit 130. The write data is encoded by the encoder 131a, transferred to the probe head control circuit 130, and drives the integrated cantilever type probe 123 to write it on the recording medium 126. When reading data, an address to be read is generated by a processor (not shown), and the probe head control circuit 1
Drive 30. The probe head control circuit 130 reads the signal of each probe from the integrated cantilever type probe 123 according to this address and transfers it to the decoder / combiner 131b. The decoder 131b performs error detection or error correction from this signal and outputs data.

In order to control the distance between the probe and the medium and to control the tilt of the integrated cantilever type probe, the probe head control circuit 130 directly reads the information of the tunnel current flowing through each probe electrode in the same manner as described above. The inter-medium distance control circuit 132 detects the deviation from the reference position, and the Z direction control of each probe electrode is controlled by the cantilever drive circuit 133. When it is necessary to correct the posture of the integrated cantilever type probe, the tilt correction circuit is provided. 128.

[0028] Figure 10 shows a detailed block diagram of the probe head control circuit 130 for writing and reading of FIG.

The timing for accessing each probe electrode is based on the scanning clock 134. Clock signal CL of the cantilever type probe that integrates each scanning clock
K_Y, and further input to the Y address counter 135. The Y address counter 135 has the same number of counts as the number of stages of the Y shift register of the integrated cantilever type probe. The carry output of the Y address counter 135 is the clock signal C of the integrated cantilever type probe.
LK_X, and further input to the X address counter 136. The X address counter 136 has the same count number as the number of stages of the X shift register of the integrated cantilever type probe. The count output of these X and Y address counters is used as the probe address 137.

The read output Vout from the integrated cantilever type probe is input to the comparator 138. The comparator 138 binarizes Vref 139 as a reference voltage. This binary output is the probe address 137.
Is written in the recording unit of the probe control table 140 designated by.

The probe control tables 140-142 are
The temporary storage memory composed of the same number of recording units as the number of probes of the integrated cantilever type probe has one page, and has one to several pages. Each recording unit records not only the recording data logical value read from the integrated cantilever type probe but also at least 6-valued logical value such as a driving state instructing each operation of reading, ON writing, OFF writing, or erasing.

When accessing the integrated cantilever type probe, Φr, Φd and Φw signals are generated so as to control the corresponding probe electrode according to the drive state value of each unit of the probe control table.

When reading data from the integrated cantilever type probe, first, the probe electrode is scanned to a predetermined position on the recording medium. Next, a host control CP (not shown)
By U, the drive state value of the read operation is registered in the recording unit corresponding to the address of the probe to read the data of the probe control tables 140 to 142 via the data bus and the address bus 143. After a series of read operations of the integrated cantilever type probe is completed, the read data logical value of the recording unit of the previously designated probe address is read, and the decoder 131b performs error detection or error correction to complete the read operation.

When writing is performed, the input data is encoded by the encoder 131a, and then the logical value of the code word is registered in the recording unit as a drive state value in the probe control tables 140 to 142. Write signals are sequentially transferred to the integrated cantilever type probe based on the registered logical data.

Here, one recording unit does not continuously register the write or erase operation for the access cycle for each page. That is, one probe electrode does not permit the write operation continuously, and the write operation is always performed while the write operation is performed. This is necessary to control the distance between the probe electrode and the recording medium by controlling the signal amplitude during reading.

Further, neither writing nor erasure registration is performed on all the recording units in one page. That is, all the probe electrodes arranged in the matrix of the integrated cantilever type probe do not simultaneously perform the writing operation. This is necessary to control the tilt of the integrated cantilever type probe so that it is always held parallel to the recording medium.

The Z direction control of the probe electrode and the tilt control of the probe head are performed by the tunnel current equivalent signal Jt generated from the Vout signal and the signal attributes generated from the signals Φr, Φd, and Φw, and the probe. This is performed by the probe / medium distance control circuit 132 using a probe control signal group 144 composed of an address. That is,
The probe-medium distance control circuit 132 refers to the probe control table and drives the cantilever drive circuit 133 and the tilt correction circuit 128 based on the output signal Vout of the probe in the read operation state.

The cantilever used in this embodiment has a thermal drive actuator in addition to the probe electrode,
The distance between the probe electrode and the recording medium can be controlled individually. Further, these actuators are driven by signals sent from the cantilever driving circuit 133 by a circuit (not shown) provided in the integrated cantilever type probe.

By using the writing / reading control method based on the above-mentioned probe control table, the probe electrodes in the reading state can be freely arranged and all the probe electrodes have a uniform writing / reading ratio. Can be controlled. With this control, the Z, Y of the probe can be stable, fast and reliable without depending on the written / erased data.
Directional control can be performed.

As a result, in the above information processing apparatus, the drive characteristics of the cantilever, the tunnel current detection characteristics, etc. were greatly improved, and high-speed, stable, and highly reliable information recording, reproduction, and erasing could be performed. .

Example 2 FIG. 11 is a perspective view of the cantilever type probe manufactured in this example. The difference from the first embodiment is that the heating element layer 3,
3 ', 4, 4'is replaced with a dopant PolySi, a metal having a relatively high resistance such as Ta, W, Mo is used, and PolySi or SiO ₂ is used as the support 2 of the cantilever. The drive of the cantilever can be performed by controlling the current of the heating element layers 3, 3 ′, 4, 4 ′ as in the first embodiment. Also in this embodiment, the pattern of the heating element layer may be as shown in FIGS. 6 (a) and 6 (b).

Next, as in Example 1, the surface of the sample 103 was observed with a scanning tunneling microscope using the above cantilever type probe as shown in FIG. 7 using a HOPG (graphite) plate. A good atomic image could be obtained as in Example 1.

Further, the above cantilever type probe is shown in FIG.
As shown in FIG. 8 , a plurality of integrated cantilever type probes were formed on the same substrate. Similarly to the first embodiment, in the information processing device using the integrated cantilever type probe as shown in FIG. 9 as well, similar to the first embodiment, high-speed and highly reliable information recording, reproduction and erasing are performed. Could be done.

[0044] EXAMPLE 3 In this example, to produce a cantilever type probe using the onset bright cantilever type displacement element shown in FIG. This manufacturing method will be described with reference to FIG. 12.

First, ion implantation was performed on the (100) n-type Si substrate 1.
Inject B as a dopant in a sampler device and heat in a furnace
To form a sacrificial layer by a CVD apparatus.
iO₂A layer 31 is formed thereon (see FIG.12(A) Ginseng
See). After that, a metal material 32 such as Au is formed and patterned.
To (figure12(See (b)). Next, use the LPCVD equipment.
Undoped PolySi film is formed and resist patterning
After that, in the ion implantation system, B as a dopant or
Heating element which is P-implanted non-doped layer 2 and doped layer
Form layers 3, 3 '. In addition, the LPCVD equipment
PolySi film is formed and patterned (Fig.12
(See (c)). Extraction with the tunnel current detection probe 5
After forming the electrode 6 for etching, patterning after resist patterning
SiO under the bar₂Cantilever type probe
Is formed (Fig.12(See (d)). Heating element layer 3,
There are various 3'patterns, for example6
(A) and (b) can be used.

The drive of the cantilever is carried out, for example, by controlling the current of the heating element layers 3 and 3'in the Y-axis direction of FIG. 3, and between the lower electrode 32 of the cantilever and the electrode 33 on the Si substrate 1 facing the lower electrode 32. When an appropriate bias is applied, it is possible to drive in the Z-axis direction by the electrostatic force between the electrodes.

Next, as in Example 1, the surface of the sample 103 was observed with a scanning tunneling microscope using the above cantilever type probe as shown in FIG. 7 using a HOPG (graphite) plate. A good atomic image could be obtained as in Example 1.

Further, the above cantilever type probe is shown in FIG.
As shown in FIG. 8 , a plurality of integrated cantilever type probes were formed on the same substrate. Similarly to the first embodiment, in the information processing device using the integrated cantilever type probe as shown in FIG. 9 as well, similar to the first embodiment, high-speed and highly reliable information recording, reproduction and erasing are performed. Could be done.

[0049] EXAMPLE 4 In this example, to produce a cantilever type probe using the onset bright cantilever type displacement element shown in FIG. The difference from the third embodiment is that the heating element layers 3 and 3'are made of the dopant P.
Instead of oliSi, a metal having a relatively high resistance such as Ta,
That is, W, Mo or the like was used, and PolySi or SiO ₂ was used as the support 2 of the cantilever.
The driving of the cantilever is similar to that of the third embodiment, and the heating element layer 3,
It can be performed in the Y-axis direction by controlling the current 3 ', and in the Z-axis direction by applying a bias between the electrode 32 on the lower surface of the cantilever and the electrode 33 on the Si substrate 1. Also in this embodiment, the pattern of the heating element layer may be as shown in FIGS. 6 (a) and 6 (b).

Next, in the same manner as in Example 1, the surface of the sample 103 was observed with a scanning tunneling microscope using the above cantilever probe as shown in FIG. 7 using a HOPG (graphite) plate. A good atomic image could be obtained as in Example 1.

Further, the above cantilever type probe is
As shown in FIG. 8 , a plurality of integrated cantilever type probes were formed on the same substrate. Similarly to the first embodiment, in the information processing device using the integrated cantilever type probe as shown in FIG. 9 as well, similar to the first embodiment, high-speed and highly reliable information recording, reproduction and erasing are performed. Could be done.

[0052]

As described above, according to the cantilever type displacement element or the cantilever type probe of the present invention,
It has the following effects. Since the cantilever type displacement element of the present invention is thermally driven and does not use the piezoelectric film, the characteristic change or deterioration due to absorption of moisture in the air does not occur. In addition, since it does not have a columnar structure like the conventional piezoelectric film, it is possible to improve mechanical strength and durability, and further, the internal stress at the time of element formation is reduced, and the warp of the cantilever is reduced. You can Moreover, the cantilever type probe using this became a highly reliable detection element.

[0053] Further, the present invention the cantilever probe or by, this allows fast and reliable image observation is run査型tunneling microscope using multiple integrated and formed by integrating a cantilever type probe on the same substrate as the Become.

[0054] Further, the information processing apparatus using the cantilever probe, the integrated cantilever probe,
It becomes a highly reliable device that can perform recording and reproduction at high speed and has few errors.

[Brief description of drawings]

1 is a perspective view showing an example of the onset Ming cantilever probe with a cantilever type displacement element.

FIG. 2 is a cross-sectional view taken along each section of FIG.

3 is a perspective view showing another example of a cantilever type probe using the onset bright cantilever type displacement element.

4 is a sectional view at the cutting plane of FIG.

5A and 5B are views for explaining a method of manufacturing the cantilever type probe of Example 1.

6 is a diagram showing an example of a pattern of the heat generating layer in this onset bright cantilever type displacement element.

FIG. 7 is an example of a schematic view of a scanning tunneling microscope according to the present invention.

FIG. 8 is a diagram schematically showing an integrated cantilever type probe according to the present invention.

FIG. 9 is an example of a block configuration diagram of an information processing apparatus according to the present invention.

FIG. 10 is a detailed block configuration diagram of a probe head control circuit.

FIG. 11 is a perspective view of a cantilever probe according to a second embodiment.

FIG. 12 is a drawing for explaining the manufacturing method of the cantilever type probe of Example 3.

FIG. 13 is an example of a conventional cantilever type displacement element composed of a piezoelectric bimorph.

FIG. 14 is a diagram showing a driving state of a conventional cantilever type displacement element composed of a piezoelectric bimorph.

[Explanation of symbols]

1 Silicon Substrate 2 Cantilever Support 3,3 ', 4,4' Heating Element Layer 5 Probe 6 Extraction Electrode 31 SiO ₂ Layer 32,33 Electrostatic Drive Electrode 81 Mask Layer 101 Made of Si Nitride Silicon Substrate 102 Cantilever Type probe 103 sample 104 XY fine movement mechanism 105 piezoelectric element for Z direction coarse movement 106 bias circuit 107 tunnel current detection circuit 109 XY position control circuit 110 Z direction servo circuit 111 Z direction coarse movement drive circuit 112 control circuit 113 display 114 approach mechanism 115 XY Fine movement drive circuit 117 X-shift register 118 Y-shift register 119 Circuit part 120 Cantilever 121 Matrix wiring 122 Bonding pad 123 Integrated cantilever type probe 124 XY actuator 125 Scanning circuit 126 Recording medium 27 Tilt Correction Actuator 128 Tilt Correction Circuit 129 Structure 130 Probe Head Control Circuit 131a Encoder 131b Decompressor 132 Distance Control Circuit 133 Cantilever Drive Circuit 134 Scan Clock 135 Y-Address Counter 136 X-Address Counter 137 Probe Address 138 Comparator 139 Reference Voltage Vref 140 to 142 Probe control table 143 Address bus 144 Probe control signal group 201 Piezoelectric body 202 Electrode

─────────────────────────────────────────────────── ─── Continuation of front page (72) Keisuke Yamamoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Katsuhiko Shinjo 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Within the corporation (56) Reference JP-A-4-95804 (JP, A) JP-A-61-206148 (JP, A) JP-A-4-121603 (JP, A) Actual development Sho-59-2344 (JP, A) U) Actual Kohei 2-40485 (JP, Y2) (58) Fields investigated (Int.Cl. ⁷ , DB name) H02N 10/00 F03G 7/06 G01N 13/10

Claims (5)

(57) [Claims] 1. A displacement element formed in a cantilever shape on a substrate, and a probe disposed at a free end portion of the displacement element.
A that the cantilever type probe, the displacement element is supported
A carrier and at least a symmetrical arrangement with respect to the support
It is formed by a pair of heating element layers, and is displaced by thermal driving of the heating element layers, and expands and contracts by applying the same current to all the heating element layers, so that only one of the pair of heating element layers expands and contracts. A cantilever probe, which is displaced in a direction orthogonal to the direction of expansion and contraction by passing an electric current. 2. The displacement element is supported by a pair of heating element layers.
A pair of heating element layers provided on the upper and lower surfaces of the body and on the upper surface, respectively.
Is to apply current only to the pair of heating elements underneath.
The cantilever type probe according to claim 1 , wherein the probe is displaced in a direction perpendicular to the substrate surface . 3. An electrode is provided on the lower surface of the support and the surface of the substrate.
A cantilevered probe according to claim 1, wherein <br/> be displaced in a direction perpendicular to the said substrate surface by an electrostatic force
Boo . By 4. A stretching and direction of displacement perpendicular to that of the displacement element, a cantilever type probe according to any one of claims 1 to 3, characterized in that two-dimensionally scanning the probe. 5. An integrated cantilever type probe, wherein a plurality of the cantilever type probes according to claim 1 are arranged on the same substrate.