JPH0758261B2 - Method for measuring impurity concentration in silicon - Google Patents
Method for measuring impurity concentration in siliconInfo
- Publication number
- JPH0758261B2 JPH0758261B2 JP20652487A JP20652487A JPH0758261B2 JP H0758261 B2 JPH0758261 B2 JP H0758261B2 JP 20652487 A JP20652487 A JP 20652487A JP 20652487 A JP20652487 A JP 20652487A JP H0758261 B2 JPH0758261 B2 JP H0758261B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- impurity concentration
- depth direction
- incident angle
- concentration distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体装置の製造に用いられるシリコン中の
深さ方向の不純物濃度分布を非破壊的に測定する方法に
関するものである。Description: TECHNICAL FIELD The present invention relates to a method for nondestructively measuring an impurity concentration distribution in a depth direction in silicon used for manufacturing a semiconductor device.
（従来の技術） 従来、シリコン中の深さ方向の不純物濃度分布の測定に
は、二次イオン質量分析（SIMS），オージェ電子分光分
析（AES）などが用いられている。(Prior Art) Conventionally, secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), etc. have been used to measure the impurity concentration distribution in the depth direction in silicon.
（発明が解決しようとする問題点） これら従来技術による測定は、イオンや電子をプローブ
として用いるために真空中で行う必要があり、従って、
イオンポンプやターボモレキュラーポンプが設置された
真空チェンバーを必要とした。また、不活性ガスを用い
て試料を削る必要があり、破壊的測定方法であった。(Problems to be Solved by the Invention) These conventional measurement methods need to be performed in a vacuum in order to use ions or electrons as a probe.
It required a vacuum chamber with an ion pump and a turbo molecular pump. Further, it was a destructive measurement method because it was necessary to scrape the sample using an inert gas.
本発明は、シリコン中の深さ方向の不純物濃度分布を非
真空中で、かつ非破壊的に測定する方法を提供するもの
である。The present invention provides a method for non-destructively measuring the impurity concentration distribution in the depth direction in silicon in a non-vacuum.
（問題点を解決するための手段） 上記問題点を解決するために、シリコンの表面から赤外
線を入射させ、その赤外反射吸収特性におけるプラズマ
振動数の入射角依存性を測定することにより、不純物濃
度の深さ方向分布を非破壊的に測定するものである。(Means for Solving the Problems) In order to solve the above problems, an infrared ray is made incident from the surface of silicon, and the incident angle dependence of the plasma frequency in the infrared reflection and absorption characteristics thereof is measured. It is a non-destructive measurement of the concentration distribution in the depth direction.
（作用） 赤外光をプローブとして用いるいために、その測定には
真空チェンバーを必要とせず、大気中や窒素雰囲気中で
行うことができる。しかもその測定には、試料を削る必
要がないため非破壊的であり、測定後再びその試料を使
用することが可能である。(Operation) Since infrared light is used as a probe, a vacuum chamber is not required for the measurement, and the measurement can be performed in the air or a nitrogen atmosphere. Moreover, the measurement is nondestructive because it is not necessary to scrape the sample, and the sample can be used again after the measurement.
（実施例） 以下、本発明の一実施例を図面を参照しながら説明す
る。第１図は、リンをイオン注入したSi（100）単結晶
について、プラズマ振動数の入射角依存性を求めたもの
である。即ち、Si（100）単結晶を洗浄後、８×1015／c
m2のリンイオンを30KeVで注入し、その後、N2ガス中100
0℃でアニールしたものを試料とし、FT−IRを用いて赤
外反射吸収特性からプラズマ振動数の入射角依存性を測
定した。小さな入射角では光の浸透深さが大きいので、
深い位置の不純物濃度に関する情報を得、90°に近い入
射角では表面近傍の情報を得ることができる。第１図よ
り、プラズマ振動数が入射角の増加とともに増加してい
ることがわかる。これは、試料の表面近傍のリン濃度が
大きく、深くなるにつれて減少することを示している。(Example) Hereinafter, one example of the present invention will be described with reference to the drawings. FIG. 1 shows the dependence of the plasma frequency on the incident angle for a Si (100) single crystal in which phosphorus is ion-implanted. That is, after washing the Si (100) single crystal, 8 × 10 15 / c
Implant phosphorous ions of m 2 at 30 KeV and then 100 N 2 gas.
The sample annealed at 0 ℃ was used to measure the incident angle dependence of the plasma frequency from the infrared reflection and absorption characteristics using FT-IR. Since the penetration depth of light is large at small incident angles,
Information about the impurity concentration at a deep position can be obtained, and information near the surface can be obtained at an incident angle close to 90 °. From FIG. 1, it can be seen that the plasma frequency increases as the incident angle increases. This indicates that the phosphorus concentration in the vicinity of the surface of the sample is large and decreases with increasing depth.
プラズマ振動数とリン濃度とは一定の関数関係にあり、
従って、第１図を解析することにより、入射角に対応す
る試料の深さ方向におけるリン濃度分布を、第２図に示
したように求めることができる。Plasma frequency and phosphorus concentration have a constant functional relationship,
Therefore, by analyzing FIG. 1, the phosphorus concentration distribution in the depth direction of the sample corresponding to the incident angle can be obtained as shown in FIG.
以上、本発明の一実施例を説明したが、不純物はリンに
限る必要はなく、ホウ素やヒ素であってもよい。また、
不純物をドープする試料はSi（100）単結晶に限る必要
はなく、他の方位の単結晶，ポリシリコン，アモルファ
スシリコン等であってもよい。Although one embodiment of the present invention has been described above, the impurity need not be limited to phosphorus and may be boron or arsenic. Also,
The sample doped with impurities is not limited to the Si (100) single crystal, and may be a single crystal having another orientation, polysilicon, amorphous silicon, or the like.
（発明の効果） 以上説明したように、本発明によれば、シリコン中の深
さ方向の不純物濃度分布を、真空チェンバーを用いるこ
となく大気中や窒素雰囲気中で、かつ非破壊的に測定す
ることができる。(Effects of the Invention) As described above, according to the present invention, the impurity concentration distribution in the depth direction in silicon is measured in the atmosphere or nitrogen atmosphere without using a vacuum chamber and nondestructively. be able to.
第１図は、本発明の一実施例の赤外反射吸収特性におけ
るプラズマ振動数の入射角依存性を示す図、第２図は、
第１図の解析結果としての深さ方向のリン濃度分布を示
す図である。FIG. 1 is a diagram showing the incident angle dependence of plasma frequency in infrared reflection absorption characteristics of one embodiment of the present invention, and FIG.
It is a figure which shows the phosphorus concentration distribution of the depth direction as an analysis result of FIG.
Claims (1)
外線を入射させ、その赤外反射吸収特性におけるプラズ
マ振動数の赤外線入射角依存性からシリコン中の深さ方
向の不純物濃度分布を求めることを特徴とするシリコン
中の不純物濃度の測定方法。1. An infrared ray is incident from the surface of silicon doped with impurities, and the impurity concentration distribution in the depth direction in silicon is determined from the infrared ray incident angle dependence of the plasma frequency in the infrared reflection absorption characteristics. Measuring method of impurity concentration in silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20652487A JPH0758261B2 (en) | 1987-08-21 | 1987-08-21 | Method for measuring impurity concentration in silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20652487A JPH0758261B2 (en) | 1987-08-21 | 1987-08-21 | Method for measuring impurity concentration in silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6450936A JPS6450936A (en) | 1989-02-27 |
| JPH0758261B2 true JPH0758261B2 (en) | 1995-06-21 |
Family
ID=16524793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20652487A Expired - Lifetime JPH0758261B2 (en) | 1987-08-21 | 1987-08-21 | Method for measuring impurity concentration in silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758261B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012200994A1 (en) * | 2012-01-24 | 2013-07-25 | Wacker Chemie Ag | Method for determining surface contamination of polycrystalline silicon |
-
1987
- 1987-08-21 JP JP20652487A patent/JPH0758261B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| Ｊ．Ｐｈｙｓ，Ｃｈｅｍ，Ｓｏｌｉｄｓ，１９７４，Ｖｏｌ．３５，Ｎｏ．１２，ｐ１５９３−１５９４ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6450936A (en) | 1989-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6759255B2 (en) | Method and system for detecting metal contamination on a semiconductor wafer | |
| Bhattacharya et al. | Specific site location of S and Si in ion‐implanted GaAs | |
| JPH0758261B2 (en) | Method for measuring impurity concentration in silicon | |
| Diebold et al. | Evaluation of surface analysis methods for characterization of trace metal surface contaminants found in silicon integrated circuit manufacturing | |
| JP3460434B2 (en) | Method and apparatus for evaluating oxygen concentration in semiconductor silicon crystal | |
| JP3439584B2 (en) | Method for measuring concentration distribution of element in solid and sample for measurement | |
| JP3439332B2 (en) | How to measure crystal defects | |
| Schwarz et al. | Concentration profiles of implanted boron ions in silicon from measurements with the ion microprobe | |
| JP3198713B2 (en) | Atmospheric boron content measurement method | |
| JP2682483B2 (en) | Secondary ion mass spectrometry | |
| Yamaji et al. | Diffusion of ion‐implanted phosphorus within thermally grown SiO2 in O2 ambient | |
| JP3374497B2 (en) | Concentration distribution measurement method | |
| JP2000206063A (en) | Method for analyzing impurity concentration of interface | |
| JP2002181746A (en) | Quantitative analysis method and auxiliary sample and standard sample thereof | |
| Bhattacharya et al. | Application of RBS and PIXE in specific site determination of S and SI in ion implanted GaAs | |
| JPS6371636A (en) | Method for measuring impurity concentration in silicon | |
| JP2917937B2 (en) | Method for analyzing impurity concentration distribution of semiconductor device | |
| JPH0989820A (en) | Method for analyzing impurity profile | |
| JPS62113052A (en) | Element analysis | |
| JPH06138061A (en) | Method for measuring concentration distribution of trace element | |
| JPS61181949A (en) | Analysis for impurities position depth direction | |
| US8492177B2 (en) | Methods for quantitative measurement of a plasma immersion process | |
| Sher et al. | Determination of oxygen in germanium below 20 parts per billion by measurements of lithium mobility and precipitation | |
| JP2556996B2 (en) | Sample preparation method for damage evaluation during semiconductor manufacturing process and its evaluation method | |
| JP2001021460A (en) | Preparation of standard sample for determination for secondary ion mass spectrometry |