JPH07502863A - イオンを用いた表面処理方法 - Google Patents

イオンを用いた表面処理方法

Info

Publication number
JPH07502863A
JPH07502863A JP5512112A JP51211292A JPH07502863A JP H07502863 A JPH07502863 A JP H07502863A JP 5512112 A JP5512112 A JP 5512112A JP 51211292 A JP51211292 A JP 51211292A JP H07502863 A JPH07502863 A JP H07502863A
Authority
JP
Japan
Prior art keywords
ions
ion
highly charged
plasma
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5512112A
Other languages
English (en)
Japanese (ja)
Inventor
アンドレ，ユルゲン
Original Assignee
ホフマイスター，ヘルムート
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ホフマイスター，ヘルムート filed Critical ホフマイスター，ヘルムート
Publication of JPH07502863A publication Critical patent/JPH07502863A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/316—Changing physical properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5512112A 1992-01-08 1992-12-31 イオンを用いた表面処理方法 Pending JPH07502863A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4200235A DE4200235C1 (enExample) 1992-01-08 1992-01-08
DE4200235.4 1992-01-08
PCT/EP1992/003015 WO1993014250A2 (de) 1992-01-08 1992-12-31 Verfahren zur oberflächenbearbeitung mit ionen

Publications (1)

Publication Number Publication Date
JPH07502863A true JPH07502863A (ja) 1995-03-23

Family

ID=6449179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5512112A Pending JPH07502863A (ja) 1992-01-08 1992-12-31 イオンを用いた表面処理方法

Country Status (6)

Country Link
US (1) US5849093A (enExample)
EP (1) EP0620870A1 (enExample)
JP (1) JPH07502863A (enExample)
AU (1) AU3258693A (enExample)
DE (1) DE4200235C1 (enExample)
WO (1) WO1993014250A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004778A (ja) * 2007-06-21 2009-01-08 Fei Co 高解像度プラズマ・エッチング

Families Citing this family (39)

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Publication number Priority date Publication date Assignee Title
NL9500317A (nl) * 1995-02-17 1996-10-01 Atag Keukentechniek Bv Beveiligingsinrichting voor een kooktoestel.
DE19644150A1 (de) * 1996-10-24 1998-04-30 Roland Dr Gesche Magnetfeldunterstütztes Reinigen, Entfetten und Aktivieren mit Niederdruck-Gasentladungen
AU719341B2 (en) * 1997-01-22 2000-05-04 De Nora Elettrodi S.P.A. Method of forming robust metal, metal oxide, and metal alloy layers on ion-conductive polymer membranes
US6115452A (en) * 1998-01-08 2000-09-05 The Regents Of The University Of California X-ray radiography with highly charged ions
US6288394B1 (en) * 1999-03-02 2001-09-11 The Regents Of The University Of California Highly charged ion based time of flight emission microscope
JP2000315458A (ja) 1999-04-28 2000-11-14 Toshiba Corp 平面型画像表示装置の製造方法、および平面型画像表示装置の製造装置
US6375790B1 (en) 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6486072B1 (en) 2000-10-23 2002-11-26 Advanced Micro Devices, Inc. System and method to facilitate removal of defects from a substrate
US6371135B1 (en) * 2001-07-02 2002-04-16 Advanced Micro Devices, Inc. Method and apparatus for removing a particle from a surface of a semiconductor wafer
JP2006521006A (ja) * 2003-03-03 2006-09-14 ブリガム・ヤング・ユニバーシティ 直交加速飛行時間型質量分析のための新規な電子イオン化源
US20070059922A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
KR100769833B1 (ko) * 2006-08-14 2007-10-23 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US9251837B2 (en) 2012-04-25 2016-02-02 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US9224416B2 (en) 2012-04-24 2015-12-29 Seagate Technology Llc Near field transducers including nitride materials
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
DE102010030372B4 (de) 2010-06-22 2012-02-16 Dreebit Gmbh Vorrichtung zur Strukturierung von Festkörperflächen mit Ionenstrahlen aus einem Ionenstrahlspektrum
DE202010009379U1 (de) 2010-06-22 2010-09-02 Dreebit Gmbh Vorrichtung zur Strukturierung von Festkörperflächen mit Ionenstrahlen aus einem Ionenstrahlspektrum
WO2013116595A1 (en) * 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
JP6126425B2 (ja) * 2013-03-27 2017-05-10 株式会社日立ハイテクサイエンス 集束イオンビーム装置及びその制御方法
US8830800B1 (en) 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
JP6038843B2 (ja) 2013-06-24 2016-12-07 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ 少なくとも１つの相互混合層を含む装置
US20140376351A1 (en) 2013-06-24 2014-12-25 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
US9305572B2 (en) 2014-05-01 2016-04-05 Seagate Technology Llc Methods of forming portions of near field transducers (NFTS) and articles formed thereby
US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
US9620150B2 (en) 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9552833B2 (en) 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US10510364B2 (en) 2014-11-12 2019-12-17 Seagate Technology Llc Devices including a near field transducer (NFT) with nanoparticles
US10192573B2 (en) 2015-03-22 2019-01-29 Seagate Technology Llc Devices including metal layer
WO2016191707A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Multipiece near field transducers (nfts)
WO2016191666A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Near field transducers (nfts) including barrier layer and methods of forming
US9852748B1 (en) 2015-12-08 2017-12-26 Seagate Technology Llc Devices including a NFT having at least one amorphous alloy layer
CN112146967A (zh) * 2019-06-28 2020-12-29 Fei 公司 用于制备和递送用于带电粒子分析的生物样品的系统和方法
CN116673273B (zh) * 2023-08-03 2023-10-27 北京奇峰蓝达光学科技发展有限公司 一种氟化钙原料表面去杂方法及其装置

Family Cites Families (9)

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FR2475798A1 (fr) * 1980-02-13 1981-08-14 Commissariat Energie Atomique Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede
US4541890A (en) * 1982-06-01 1985-09-17 International Business Machines Corporation Hall ion generator for working surfaces with a low energy high intensity ion beam
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
FR2546358B1 (fr) * 1983-05-20 1985-07-05 Commissariat Energie Atomique Source d'ions a resonance cyclotronique des electrons
FR2556498B1 (fr) * 1983-12-07 1986-09-05 Commissariat Energie Atomique Source d'ions multicharges a plusieurs zones de resonance cyclotronique electronique
US4735877A (en) * 1985-10-07 1988-04-05 Canon Kabushiki Kaisha Lithographic mask structure and lithographic process
DE3789618T2 (de) * 1986-09-29 1994-11-10 Nippon Telegraph & Telephone Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle.
JP2587924B2 (ja) * 1986-10-11 1997-03-05 日本電信電話株式会社 薄膜形成装置
NL9000004A (nl) * 1990-01-02 1991-08-01 Smit Transformatoren Bv Scheiding van op dragermateriaal geadsorbeerde deeltjes.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004778A (ja) * 2007-06-21 2009-01-08 Fei Co 高解像度プラズマ・エッチング
US8303833B2 (en) 2007-06-21 2012-11-06 Fei Company High resolution plasma etch

Also Published As

Publication number Publication date
DE4200235C1 (enExample) 1993-05-06
WO1993014250A3 (de) 1994-02-03
EP0620870A1 (de) 1994-10-26
AU3258693A (en) 1993-08-03
US5849093A (en) 1998-12-15
WO1993014250A2 (de) 1993-07-22

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