JPH0750113A - Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure - Google Patents

Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure

Info

Publication number
JPH0750113A
JPH0750113A JP19377193A JP19377193A JPH0750113A JP H0750113 A JPH0750113 A JP H0750113A JP 19377193 A JP19377193 A JP 19377193A JP 19377193 A JP19377193 A JP 19377193A JP H0750113 A JPH0750113 A JP H0750113A
Authority
JP
Japan
Prior art keywords
conductive
transferring
support
conductive protrusion
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19377193A
Other languages
Japanese (ja)
Inventor
Masako Maeda
雅子 前田
Kazumi Azuma
一美 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP19377193A priority Critical patent/JPH0750113A/en
Publication of JPH0750113A publication Critical patent/JPH0750113A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a base material to retain a conductive protrusion which can be easily formed on an electric circuit or electric circuit parts and a method in which the conductive protrusion can be easily formed on an electric circuit or electric circuit parts. CONSTITUTION:A conductive protrusion transferring base material S is such that a conductive protrusion 2 is fixed to a soluble support 1. A conductive protrusion transferring method is such that the conductive protrusion 2 on the conductive protrusion transferring base material S is bonded to a transferred material and then the support 1 for the base material S is dissolved and removed. The manufacture of a probe card structure is such that the conductive protrusion 2 on the conductive protrusion transferring base material S is bonded to the electrode face of a probe card and then the support 1 for the base material S is dissolved and removed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電気回路または電気回
路部品等に容易に形成することが可能な導電性突起物を
保持する基材および該導電性突起物の形成方法、ならび
に電気回路または電気回路部品等の検査等を行う際に用
いられるプローブカード構造体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a base material holding a conductive protrusion which can be easily formed on an electric circuit or an electric circuit component, a method for forming the conductive protrusion, and an electric circuit or The present invention relates to a method of manufacturing a probe card structure used when inspecting electric circuit components and the like.

【0002】[0002]

【従来の技術・発明が解決しようとする課題】近年の技
術の進歩に伴って、電子機器の軽薄短小化が年々進めら
れており、半導体実装の技術分野においては、基板上に
半導体素子を高密度で実装することが強く要望されてい
る。従来、当該分野においては、半導体素子に金属より
なる突起物(バンプ)を形成して接続端子とし、これに
より実装を行っている。このようなバンプによる実装方
法は、半導体素子以外にも各種電気・電子部品の実装密
度を向上させる方法として有用なものである。
2. Description of the Related Art With the progress of technology in recent years, electronic devices have been made lighter and thinner and smaller and smaller. There is a strong demand for dense packaging. 2. Description of the Related Art Conventionally, in this field, a semiconductor element is provided with a protrusion (bump) made of metal to form a connection terminal, and mounting is performed by using this. Such a mounting method using bumps is useful as a method for improving the mounting density of various electric / electronic components other than semiconductor elements.

【0003】ところが、上記のようなバンプを半導体素
子その他の電気・電子部品に直接形成することは技術的
に困難である。例えば、電解メッキによりバンプを形成
しようとする場合、この電解メッキのために独立して通
電リードを設けることが困難な場合が多く、このため無
電解メッキによりバンプを形成することもなされるが、
これによればメッキ処理に長時間を要する。また、電解
メッキが可能な場合でも、バンプを十分な高さを有する
ように形成することは困難である。これらのことが、電
子機器製造における歩留りの原因となっている。
However, it is technically difficult to directly form the above bumps on a semiconductor element or other electric / electronic parts. For example, when a bump is to be formed by electroplating, it is often difficult to independently provide a current-carrying lead for this electroplating. Therefore, the bump may be formed by electroless plating.
According to this, the plating process requires a long time. Further, even if electrolytic plating is possible, it is difficult to form bumps having a sufficient height. These are the causes of yield in electronic device manufacturing.

【0004】そこで、バンプを電気・電子部品に転写法
によって形成することが提案されている。しかしなが
ら、この転写法として現在行われているものは、製造コ
スト、バンプ転写の容易性等の点で未だ満足できるもの
ではない。
Therefore, it has been proposed to form bumps on electric / electronic components by a transfer method. However, the method currently used as this transfer method is still unsatisfactory in terms of manufacturing cost, ease of bump transfer, and the like.

【0005】本発明の目的は、上記のような問題を解消
し、電気回路または電気回路部品等に容易に形成するこ
とが可能な導電性突起物を保持する基材を提供すること
にある。また、本発明の他の目的は、導電性突起物を電
気回路または電気回路部品等に容易に形成しうる方法を
提供することにある。
An object of the present invention is to solve the above problems and to provide a base material which holds a conductive protrusion which can be easily formed on an electric circuit or an electric circuit component. Another object of the present invention is to provide a method capable of easily forming a conductive protrusion on an electric circuit or an electric circuit component.

【0006】[0006]

【課題を解決するための手段】本発明者等は、導電性突
起物を可溶性の支持体に固定し、電気回路または電気回
路部品等を被転写体としてこれに上記導電性突起物を接
合した後、支持体を溶解除去するようにすると、導電性
突起物を電気回路または電気回路部品等に容易に形成す
ることができるようになることを見出し、本発明を完成
するに至った。即ち、本発明の導電性突起物転写用基材
は、導電性突起物が可溶性の支持体に固定されてなるも
のである。また、本発明の導電性突起物の転写方法は、
上記導電性突起物転写用基材の導電性突起物を被転写体
に接合した後、上記基材の支持体を溶解除去することを
特徴とするものである。さらに、本発明のプローブカー
ド構造体の製造方法は、上記導電性突起物転写用基材の
導電性突起物をプローブカードの電極面に接合した後、
上記基材の支持体を溶解除去することを特徴とするもの
である。
The inventors of the present invention fixed the conductive protrusions to a soluble support and bonded the above-mentioned conductive protrusions to the transfer target using an electric circuit or an electric circuit component. After that, it was found that the conductive protrusions can be easily formed on an electric circuit or an electric circuit component by dissolving and removing the support, and the present invention has been completed. That is, the substrate for transferring conductive projections of the present invention is one in which the conductive projections are fixed to a soluble support. In addition, the method of transferring the conductive protrusions of the present invention,
The method is characterized in that after the conductive projection of the substrate for transferring the conductive projection is bonded to the transfer target, the support of the base is dissolved and removed. Furthermore, the method for manufacturing a probe card structure of the present invention, after bonding the conductive protrusions of the conductive protrusion transfer substrate to the electrode surface of the probe card,
It is characterized in that the support of the base material is dissolved and removed.

【0007】[0007]

【作用】上記構成においては、導電性突起物を保持する
支持体が可溶性を有することにより、この導電性突起物
を被転写体に接合した後に該支持体を溶解させて除去す
ることが可能となり、この結果導電性突起物を被転写体
に転写形成することが容易となる。また、導電性突起物
の形状として広範なものが可能となるため該導電性突起
物を転写する前に支持体から脱落しない態様とすること
ができ、さらに転写時に支持体を除去する際に導電性突
起物が支持体とともに被転写体から脱離するということ
も防止される。
In the above structure, the support holding the conductive protrusions is soluble, so that the support can be dissolved and removed after the conductive protrusions are bonded to the transfer target. As a result, it becomes easy to transfer and form the conductive protrusion on the transfer target. Moreover, since a wide variety of shapes of the conductive protrusions are possible, it is possible to adopt a mode in which the conductive protrusions do not fall off from the support before transfer, and further, the conductive protrusions are removed when the support is removed during transfer. It is also prevented that the sexual protrusions are detached from the transfer target together with the support.

【0008】以下、本発明を図面に基づいて具体的に説
明する。図1は、本発明の導電性突起物転写用基材の一
実施例を示す模式断面図である。同図において、Sは導
電性突起物転写用基材を示し、導電性突起物2が支持体
1に固定された構成となっている。なお、本実施態様に
おいては、支持体1に設けられた貫通孔Hにて導電性突
起物2が固定されている。
The present invention will be described below in detail with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing one example of the conductive projection transfer base material of the present invention. In the figure, S denotes a conductive projection transfer base material, and the conductive projection 2 is fixed to the support 1. In this embodiment, the conductive protrusion 2 is fixed by the through hole H provided in the support 1.

【0009】本発明の導電性突起物転写用基材Sは、導
電性突起物2が可溶性の支持体1に固定されてなること
を特徴とし、このように支持体1を可溶性のものとした
ことによって、導電性突起物転写時に該支持体1を溶解
除去することを可能としているものである。かくして、
導電性突起物を被転写体に転写形成することが容易とな
る。
The substrate S for transferring conductive projections of the present invention is characterized in that the conductive projections 2 are fixed to a soluble support 1, and thus the support 1 is made soluble. This makes it possible to dissolve and remove the support 1 when transferring the conductive protrusions. Thus,
It becomes easy to transfer and form the conductive protrusions on the transfer target.

【0010】本発明でいう可溶性とは、本発明の目的を
そこなうことのない媒体により溶解可能な性質をいい、
好ましくは上記媒体に1〜60分間浸漬することにより
溶解可能な性質をいう。上記媒体としては、例えばポリ
イミドを溶解する際に溶剤として通常使用されるN-メチ
ル -2-ピロリドン、m-クレゾール、ジメチルアセトアミ
ド等の有機溶媒や、アルカリ溶液、例えば水酸化ナトリ
ウム溶液、水酸化カリウム溶液、ヒドラジン等が用いら
れる。
The term "soluble" as used in the present invention refers to the property of being soluble in a medium that does not impair the object of the present invention.
Preferably, it means a property that can be dissolved by immersing in the above medium for 1 to 60 minutes. Examples of the medium include organic solvents such as N-methyl-2-pyrrolidone, m-cresol, and dimethylacetamide that are usually used as a solvent when dissolving polyimide, and alkaline solutions such as sodium hydroxide solution and potassium hydroxide. A solution, hydrazine or the like is used.

【0011】上記支持体1としては、上記のような可溶
性を有するものであれば特に限定されない。このような
支持体としてはポリエステル系樹脂、フェノキシ系樹
脂、ポリイミド系樹脂、ポリアミド系樹脂等が例示され
るが、なかでも耐熱性や機械的強度に優れるポリイミド
系樹脂が好適に使用される。
The support 1 is not particularly limited as long as it has the above-mentioned solubility. Examples of such a support include polyester-based resins, phenoxy-based resins, polyimide-based resins, polyamide-based resins, etc. Among them, polyimide-based resins excellent in heat resistance and mechanical strength are preferably used.

【0012】なお、上記支持体1は、例えば図2に示す
ように、少なくとも導電性突起物転写側表面に接着層1
1が形成されていると、導電性突起物2と被転写体との
接着信頼性が向上するため好ましい。この接着層11と
しては、エポキシ系樹脂、フェノキシ系樹脂、ウレタン
系樹脂、ポリスチレン系樹脂、ポリエチレン系樹脂、ポ
リエステル系樹脂、ポリアミド系樹脂、ポリイミド系樹
脂、ポリカーボネート系樹脂、シリコン系樹脂等の熱硬
化性樹脂または熱可塑性樹脂のうち、前記可溶性の支持
体1よりも溶融温度の低いものが使用される。なかで
も、耐熱性に優れる熱可塑性ポリイミド樹脂を使用する
ことが好ましく、この熱可塑性ポリイミド樹脂として
は、400℃における溶融粘度が1×108 ポイズ以
下、好ましくは1×103 〜1×107 ポイズのもので
あってポリイミド骨格を有するものであれば特にその構
造は限定されない。このような熱可塑性ポリイミド樹脂
として、ウルテム1000(商品名、ジェネラルエレクトリ
ック社製、ポリエーテルイミド)、LARC−TPI
(商品名、三井東圧社製、ポリイミド)、4,4'−オキシ
ジフタル酸二無水物と3,3'−ジアミノジフェニルスルホ
ンとから得られるポリイミド等より選ばれる1種または
2種以上の混合物が好適に使用される。
The support 1 is, for example, as shown in FIG. 2, an adhesive layer 1 on at least the surface of the conductive projection transfer side.
When 1 is formed, the adhesion reliability between the conductive protrusion 2 and the transfer target is improved, which is preferable. As the adhesive layer 11, thermosetting of epoxy resin, phenoxy resin, urethane resin, polystyrene resin, polyethylene resin, polyester resin, polyamide resin, polyimide resin, polycarbonate resin, silicon resin, etc. Of the organic resins and the thermoplastic resins, those having a melting temperature lower than that of the soluble support 1 are used. Above all, it is preferable to use a thermoplastic polyimide resin having excellent heat resistance. As this thermoplastic polyimide resin, the melt viscosity at 400 ° C. is 1 × 10 8 poise or less, preferably 1 × 10 3 to 1 × 10 7. The structure is not particularly limited as long as it is a poise and has a polyimide skeleton. As such a thermoplastic polyimide resin, Ultem 1000 (trade name, manufactured by General Electric Co., polyetherimide), LARC-TPI
(Trade name, polyimide manufactured by Mitsui Toatsu Co., Ltd.), one or a mixture of two or more selected from polyimides obtained from 4,4′-oxydiphthalic acid dianhydride and 3,3′-diaminodiphenyl sulfone. It is preferably used.

【0013】上記転写用導電性突起物2は、導電性の物
質で構成され、この導電性物質としては、金、銀、銅、
鉛、錫、ニッケル、コバルト、インジウム等の各種金属
またはこれらよりなる合金等が例示されるが、なかでも
半田、インジウム、錫、鉛等の低融点金属またはこれら
よりなる合金等が好ましい。
The transfer conductive protrusion 2 is made of a conductive substance, and examples of the conductive substance include gold, silver, copper,
Examples are various metals such as lead, tin, nickel, cobalt, and indium, and alloys made of these. Among them, low melting point metals such as solder, indium, tin, and lead, and alloys made of these are preferable.

【0014】上記転写用導電性突起物2の転写側の形状
としては特に限定されないが、図1に示すように、接合
対象となる電極面等に接合しやすいマッシュルーム状に
形成されていることが好ましい。
The shape of the transfer conductive projection 2 on the transfer side is not particularly limited, but as shown in FIG. 1, it is formed in a mushroom shape which is easy to bond to the electrode surface or the like to be bonded. preferable.

【0015】一方、本発明においては、上記転写用導電
性突起物2の転写側と反対側の形状として、広範なもの
が可能である。即ち、従来の転写用導電性突起物におい
ては支持体から物理的に離脱可能な形状に限定されてい
たのに対し、本発明においては転写時に支持体1を溶解
除去するようにするので、あらゆる形状が可能である。
例えば図3に示すように、転写用導電性突起物2の転写
側と反対側が貫通孔Hの端部より突出してマッシュルー
ム状に形成され、該突出部が上記貫通孔Hの開口部周縁
にて係止されている態様が好ましい。これによれば、該
導電性突起物2が転写される前に支持体1より脱落する
ことが防止される。
On the other hand, in the present invention, a wide variety of shapes can be used as the shape of the transfer conductive projection 2 on the side opposite to the transfer side. That is, in the conventional conductive protrusion for transfer, the shape is limited to the shape that can be physically detached from the support, but in the present invention, the support 1 is dissolved and removed at the time of transfer. Shapes are possible.
For example, as shown in FIG. 3, the opposite side of the transfer conductive projection 2 from the transfer side is formed in a mushroom shape by protruding from the end of the through hole H, and the protruding portion is formed at the peripheral edge of the opening of the through hole H. The locked mode is preferable. This prevents the conductive protrusions 2 from falling off the support 1 before being transferred.

【0016】上記転写用導電性突起物2は、支持体1表
面より1〜30μm、好ましくは5〜15μm突出する
ように形成されていることが好ましい。上記導電性突起
物2の突出が1μm未満となると、導電性突起物2の接
続信頼性が不十分となり、一方30μmを越えると、そ
の形成に長時間を要して製造効率が低下するため好まし
くない。
The transfer conductive projections 2 are preferably formed so as to protrude from the surface of the support 1 by 1 to 30 μm, preferably 5 to 15 μm. If the protrusion of the conductive protrusions 2 is less than 1 μm, the connection reliability of the conductive protrusions 2 is insufficient, while if it exceeds 30 μm, it takes a long time to form the conductive protrusions 2 and the manufacturing efficiency is reduced, which is preferable. Absent.

【0017】上記転写用導電性突起物2の形成方法とし
ては、例えば支持体1に貫通孔Hを形成し、この貫通孔
Hに上記導電性物質を、これが支持体1表面より上記高
さまで突出するまで充填する等の方法が挙げられる。こ
のような方法による場合、導電性物質の充填は、電解メ
ッキ、無電解メッキ等の方法によりなされればよいが、
作業時間の点から電解メッキによることが好ましい。
As a method of forming the conductive protrusions 2 for transfer, for example, a through hole H is formed in the support 1 and the conductive substance is projected into the through hole H to a height above the surface of the support 1. A method such as filling until. In the case of such a method, the filling of the conductive material may be performed by a method such as electrolytic plating or electroless plating,
From the viewpoint of working time, electrolytic plating is preferable.

【0018】なお、図4に示すように、上記導電性突起
物2の転写側部表面を上記のような低融点金属21で構
成し、それ以外の部分を上記低融点金属以外の金属22
で構成して2層構造とすると、転写側部表面の低融点金
属21により被転写体への接合・転写がなされるととも
に、低融点金属以外の金属22により圧着されることが
可能となり好ましい。上記低融点金属以外の金属22と
しては、該低融点金属21に対しぬれ性の良好な金属が
好適に使用され、このような金属として例えばニッケ
ル、金等が挙げられる。なおその際、導電性突起物2
は、図4に示すように、支持体1の両面において上記の
態様となっていることが好ましい。
As shown in FIG. 4, the surface of the transfer side portion of the conductive protrusion 2 is made of the low melting point metal 21 as described above, and the other portions are made of the metal 22 other than the low melting point metal 22.
It is preferable that the two-layer structure is constituted by the above because the low melting point metal 21 on the surface of the transfer side portion can be bonded to and transferred to the transferred body, and can be pressed by the metal 22 other than the low melting point metal. As the metal 22 other than the low melting point metal, a metal having good wettability with respect to the low melting point metal 21 is preferably used, and examples of such a metal include nickel and gold. At that time, the conductive protrusion 2
As shown in FIG. 4, it is preferable that both sides have the above-described aspect on both sides of the support 1.

【0019】上記支持体1に固定された導電性突起物2
は、これを被転写体に接合した後、上記支持体1を溶解
除去することによって、被転写体上に転写・形成され
る。
Conductive protrusions 2 fixed to the support 1
After being bonded to the transfer target, the support 1 is dissolved and removed, so that it is transferred and formed on the transfer target.

【0020】図5は、この導電性突起物の転写方法を示
す模式図である。以下、同図に基づいて上記導電性突起
物の転写形成方法をさらに具体的に説明する。まず、図
5(a)に示すように、上記導電性突起物転写用基材S
の導電性突起物2の転写側部を被転写体Tの電極部4に
接触させる。ここで、前記したように導電性突起物2の
転写側部が図1に示すようなマッシュルーム状である
と、電極部4への接触および以下に述べる接合が容易に
行える。ついで、図5(b)に示すように、導電性突起
物2を電極部4に接合する。この接合は、例えば熱可塑
性ポリイミド等を接着剤としてこれにより上記導電性突
起物2を電極部4に接着する方法や、あるいは、導電性
突起物2の少なくとも転写側部側表面が前記したように
低融点金属で構成されている場合には、加熱圧着により
接合する方法等によりなされる。この後、図5(c)に
示すように、導電性突起物転写用基材Sの支持体1を溶
解除去する。この溶解除去は、例えば有機溶媒やアルカ
リ溶液等の溶剤に支持体1を浸漬することによりなされ
る。
FIG. 5 is a schematic view showing a method of transferring the conductive protrusion. Hereinafter, the transfer forming method of the conductive protrusion will be described more specifically with reference to FIG. First, as shown in FIG. 5A, the conductive protrusion transfer base material S is used.
The transfer side portion of the conductive protrusion 2 is brought into contact with the electrode portion 4 of the transfer target T. Here, as described above, when the transfer side portion of the conductive protrusion 2 has a mushroom shape as shown in FIG. 1, the contact with the electrode portion 4 and the bonding described below can be easily performed. Then, as shown in FIG. 5B, the conductive protrusion 2 is bonded to the electrode portion 4. This joining is performed, for example, by using thermoplastic polyimide or the like as an adhesive to bond the conductive projection 2 to the electrode portion 4, or at least the surface of the conductive projection 2 on the transfer side portion side is as described above. When it is composed of a low melting point metal, it is formed by a method of joining by thermocompression bonding. After that, as shown in FIG. 5C, the support 1 of the substrate S for transferring conductive protrusions is dissolved and removed. This dissolution and removal is performed by immersing the support 1 in a solvent such as an organic solvent or an alkaline solution.

【0021】上記のような方法によって、被転写体上に
導電性突起物を容易に転写形成することができる。
By the method as described above, the conductive protrusions can be easily transferred and formed on the transferred material.

【0022】上記方法により形成された導電性突起物
は、半導体素子等の被接続体に加熱圧着等の方法により
接続される。
The conductive projection formed by the above method is connected to a body to be connected such as a semiconductor element by a method such as thermocompression bonding.

【0023】なお本発明においては、上記と同様の方法
を用いて、半導体装置等の検査に使用されるプローブカ
ード構造体を製造することもできる。即ち、検査回路パ
ターンおよび電極リードが形成された絶縁性フィルムの
該電極リードを被転写体とし、この電極リードに導電性
突起物を上記と同様にして転写形成することによって、
図6に示すようなプローブカード構造体を得ることがで
きる。
In the present invention, a probe card structure used for inspection of semiconductor devices and the like can be manufactured by using the same method as described above. That is, by using the electrode lead of the insulating film on which the inspection circuit pattern and the electrode lead are formed as the transfer target, and transferring and forming the conductive protrusion on the electrode lead in the same manner as described above,
A probe card structure as shown in FIG. 6 can be obtained.

【0024】[0024]

【実施例】以下、実施例を示し本発明をさらに具体的に
説明する。なお、本発明がこれらに限定されるものでな
いことはいうまでもない。 実施例1 銅箔上に可溶性ポリイミド前駆体溶液を、乾燥後の厚さ
が約15μmとなるように塗工した後これを硬化させ
て、銅箔層と可溶性ポリイミド層とよりなる2層フィル
ムを作製した。次に、上記2層フィルムの可溶性ポリイ
ミド層表面に、発振波長248nmのKrFエキシマレ
ーザー光をマスクを通して照射してドライエッチングを
施し、径60μm、ピッチ200μmの貫通孔を形成し
た。次いで、上記2層フィルムの銅箔層表面に、レジス
トを塗工した後これを硬化させて絶縁し、化学研磨溶液
中に50℃で2分間浸漬した。これを水洗した後、銅箔
層を電極に接続して60℃のシアン化金メッキ浴に浸漬
し、銅箔層をマイナス極として2層フィルムの貫通孔内
に金メッキを成長させ、この金メッキがポリイミド層表
面に到達するまで約20分間メッキ処理を行った。この
後、レジスト層を剥離し、銅箔層を塩化第二銅で溶解除
去して、導電性突起物転写用基材を得た。
EXAMPLES The present invention will be described more specifically below with reference to examples. Needless to say, the present invention is not limited to these. Example 1 A soluble polyimide precursor solution was applied onto a copper foil so that the thickness after drying was about 15 μm and then cured to form a two-layer film consisting of a copper foil layer and a soluble polyimide layer. It was made. Then, the surface of the soluble polyimide layer of the two-layer film was irradiated with KrF excimer laser light having an oscillation wavelength of 248 nm through a mask to perform dry etching to form through holes having a diameter of 60 μm and a pitch of 200 μm. Then, a resist was applied to the surface of the copper foil layer of the above-mentioned two-layer film and then cured to insulate it, and immersed in a chemical polishing solution at 50 ° C. for 2 minutes. After washing this with water, the copper foil layer was connected to the electrode and immersed in a gold cyanide plating bath at 60 ° C., and the copper foil layer was used as a negative electrode to grow gold plating in the through-holes of the two-layer film. The plating treatment was performed for about 20 minutes until the surface of the layer was reached. After that, the resist layer was peeled off, and the copper foil layer was dissolved and removed with cupric chloride to obtain a substrate for transferring the conductive protrusions.

【0025】別に、厚さ25μmのポリイミドフィルム
上に銅を用いて回路パターンおよび電極リードを形成し
て、回路基板を作製した。この回路基板と上記導電性突
起物転写用基材との間に接着層として厚さ5μmの熱可
塑性ポリイミドフィルムを挟み、該回路基板の電極リー
ドと導電性突起物転写用基材の導電性突起物との位置合
わせを行った後、これらを熱プレスによって350℃で
10kg/cm2 の条件下で約10分間加熱して接着し
た。この後、上記回路基板と導電性突起物転写用基材と
の接着物を、50℃、30%のNaOH溶液中に10分
間浸漬して可溶性ポリイミド層を溶解除去し、回路基板
上に導電性突起物を転写形成した。
Separately, a circuit pattern and an electrode lead were formed using copper on a polyimide film having a thickness of 25 μm to prepare a circuit board. A thermoplastic polyimide film having a thickness of 5 μm is sandwiched as an adhesive layer between the circuit board and the conductive projection transfer base material, and the electrode lead of the circuit board and the conductive projection transfer base material are provided. After alignment with the objects, these were heated and bonded by heat pressing at 350 ° C. under the condition of 10 kg / cm 2 for about 10 minutes. After that, the adhesive between the circuit board and the conductive projection transfer base material is immersed in a 30% NaOH solution at 50 ° C. for 10 minutes to dissolve and remove the soluble polyimide layer, and then the conductive material is transferred onto the circuit board. The protrusion was transferred and formed.

【0026】比較例1 銅箔上にポリイミド前駆体溶液を、乾燥後の厚さが約2
5μmとなるように塗工した後これを硬化させて、銅箔
層とポリイミド層とよりなる2層フィルムを作製した。
次に、上記2層フィルムのポリイミド層の表面に、上記
実施例1と同様にして、径60μm、ピッチ200μm
の貫通孔を形成した。次いで、上記2層フィルムの銅箔
層表面に、レジストを塗工した後これを硬化させて絶縁
し、化学研磨溶液中に50℃で2分間浸漬した。これを
水洗した後、無電解メッキによって2層フィルムの貫通
孔内に金メッキを成長させたところ、金メッキがポリイ
ミド層の表面から約5μmの高さまで突出するまでに約
5時間を要した。
Comparative Example 1 A polyimide precursor solution having a thickness of about 2 after being dried was prepared on a copper foil.
After being coated so as to have a thickness of 5 μm, this was cured to prepare a two-layer film composed of a copper foil layer and a polyimide layer.
Then, on the surface of the polyimide layer of the two-layer film, in the same manner as in Example 1, a diameter of 60 μm and a pitch of 200 μm.
Through holes were formed. Then, a resist was applied to the surface of the copper foil layer of the above-mentioned two-layer film and then cured to insulate it, and immersed in a chemical polishing solution at 50 ° C. for 2 minutes. After this was washed with water, gold plating was grown in the through holes of the two-layer film by electroless plating. It took about 5 hours for the gold plating to project to a height of about 5 μm from the surface of the polyimide layer.

【0027】実施例2 銅箔上に可溶性ポリイミド前駆体溶液を、乾燥後の厚さ
が約15μmとなるように塗工した後これを乾燥させ、
さらにこの上に熱可塑性ポリイミド前駆体溶液を、乾燥
後の厚さが約10μmとなるように塗工し、上記両ポリ
イミド層を硬化させて、銅箔層と可溶性ポリイミド層と
熱可塑性ポリイミド層とよりなる3層フィルムを作製し
た。次いで、上記3層フィルムの可溶性ポリイミド層お
よび熱可塑性ポリイミド層に、上記実施例1と同様にし
て、径60μm、ピッチ200μmの貫通孔を形成し、
該貫通孔に電解メッキによって金を充填した後、銅箔層
を除去して、導電性突起物転写用基材を得た。
Example 2 A soluble polyimide precursor solution was coated on a copper foil so that the thickness after drying was about 15 μm, and then dried.
Further, a thermoplastic polyimide precursor solution is applied thereon so that the thickness after drying is about 10 μm, and both the polyimide layers are cured to form a copper foil layer, a soluble polyimide layer, and a thermoplastic polyimide layer. A three-layer film consisting of Next, through holes having a diameter of 60 μm and a pitch of 200 μm were formed in the soluble polyimide layer and the thermoplastic polyimide layer of the three-layer film in the same manner as in Example 1 above.
After filling the through-holes with gold by electrolytic plating, the copper foil layer was removed to obtain a substrate for transferring conductive projections.

【0028】上記実施例1と同様の回路基板の電極リー
ドと導電性突起物転写用基材の導電性突起物との位置合
わせを行った後、実施例1と同様にして、該電極リード
と導電性突起物とを加熱して接着し、可溶性ポリイミド
層を溶解除去して、回路基板上に導電性突起物を転写形
成した。
After aligning the electrode leads of the circuit board and the conductive protrusions of the conductive protrusion transfer base material in the same manner as in the first embodiment, the electrode leads and the electrode leads are aligned in the same manner as in the first embodiment. The conductive protrusions were heated and adhered, the soluble polyimide layer was dissolved and removed, and the conductive protrusions were transferred and formed on the circuit board.

【0029】比較例2 銅箔上に熱可塑性ポリイミド前駆体溶液を、乾燥後の厚
さが約25μmとなるように塗工した後これを硬化させ
て、銅箔層と熱可塑性ポリイミド層とよりなる2層フィ
ルムを作製した。
Comparative Example 2 A thermoplastic polyimide precursor solution was applied on a copper foil so that the thickness after drying was about 25 μm, and then cured to obtain a copper foil layer and a thermoplastic polyimide layer. The following two-layer film was prepared.

【0030】上記実施例2において、3層フィルムにか
えて上記2層フィルムを用いる以外は全て同様にして、
導電性突起物転写用基材を作製し、回路基板の電極リー
ドと導電性突起物転写用基材の導電性突起物とを熱プレ
スにより加熱および加圧したろ、この加熱および加圧に
よって熱可塑性ポリイミド層が流動、変形し、それとと
もに導電性突起物が移動したため、該導電性突起物の転
写形成を確実に行うことができなかった。
In Example 2, except that the two-layer film was used instead of the three-layer film,
A substrate for transferring conductive projections is prepared, and the electrode leads of the circuit board and the conductive projections for transferring the conductive projections are heated and pressed by a hot press. Since the plastic polyimide layer was fluidized and deformed, and the conductive protrusions moved with it, transfer formation of the conductive protrusions could not be reliably performed.

【0031】実施例3 上記実施例1で得られた導電性突起物転写用基材の導電
性突起物上に、無電解半田メッキにより厚さ3μmの半
田層を形成した。また、これと同様にして、上記実施例
1で得られた回路基板の回路上にも半田層を形成した。
Example 3 A solder layer having a thickness of 3 μm was formed by electroless solder plating on the conductive protrusion of the substrate for transferring the conductive protrusion obtained in Example 1 above. Further, in the same manner, a solder layer was formed on the circuit of the circuit board obtained in Example 1 above.

【0032】この後、上記回路基板の電極リードと導電
性突起物転写用基材の導電性突起物との位置合わせを行
った後、これらをホットプレート上にて250℃で1分
間加熱して、該電極リードと導電性突起物とを接着し
た。次いで、上記回路基板と導電性突起物転写用基材と
の接着物を、50℃、30%のNaOH溶液中に10分
間浸漬して可溶性ポリイミド層を溶解除去し、回路基板
上に導電性突起物を転写形成した。
After that, the electrode leads of the circuit board and the conductive projections of the conductive projection transfer base material are aligned with each other, and then these are heated on a hot plate at 250 ° C. for 1 minute. The electrode lead and the conductive protrusion were bonded together. Then, the adhesive between the circuit board and the conductive projection transfer substrate is immersed in a 30% NaOH solution at 50 ° C. for 10 minutes to dissolve and remove the soluble polyimide layer, and the conductive projection on the circuit board. The material was transfer-formed.

【0033】[0033]

【発明の効果】以上詳述したように、本発明の導電性突
起物転写用基材は、導電性突起物を保持する支持体が可
溶性を有するものであるので、この導電性突起物を被転
写体に接合した後に該支持体を溶解させて除去すること
が可能となっている。これにより、導電性突起物を電気
回路または電気回路部品等に容易に転写形成することが
でき、また、導電性突起物の形状として広範なものが可
能となるため該導電性突起物を転写する前に支持体から
脱落しない態様とすることができ、さらに転写時に支持
体を除去する際に導電性突起物が支持体とともに被転写
体から脱離するということも防止される。したがって、
本発明によって、電気回路または電気回路部品等に容易
かつ確実に形成することが可能な導電性突起物を保持す
る基材が得られ、電気回路や電気回路部品上への導電性
突起物の転写やプローブカード構造体の製造が容易とな
り、また不良品の発生を低減できるようになる。
As described above in detail, in the substrate for transferring conductive projections of the present invention, the support for holding the conductive projections is soluble, so that the conductive projections are covered with the conductive projections. After being joined to the transfer body, the support can be dissolved and removed. As a result, the conductive protrusion can be easily transferred and formed on an electric circuit, an electric circuit component, or the like, and a wide variety of shapes of the conductive protrusion are possible, so that the conductive protrusion is transferred. It is possible to adopt a mode in which it does not fall off from the support before, and it is also prevented that the conductive protrusions are detached from the transfer target together with the support when the support is removed during transfer. Therefore,
INDUSTRIAL APPLICABILITY By the present invention, a base material holding a conductive protrusion that can be easily and reliably formed on an electric circuit or an electric circuit component is obtained, and the conductive protrusion is transferred onto the electric circuit or the electric circuit component. It becomes easier to manufacture the probe card structure and the probe card structure, and it is possible to reduce the occurrence of defective products.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の導電性突起物転写用基材の一実施例を
示す模式断面図である。
FIG. 1 is a schematic cross-sectional view showing an example of a conductive protrusion transfer base material of the present invention.

【図2】本発明の導電性突起物転写用基材の他の実施例
を示す模式断面図である。
FIG. 2 is a schematic cross-sectional view showing another embodiment of the conductive projection transfer base material of the present invention.

【図3】本発明の導電性突起物転写用基材の他の実施例
を示す模式断面図である。
FIG. 3 is a schematic cross-sectional view showing another embodiment of the conductive protrusion transfer base material of the present invention.

【図4】本発明の導電性突起物転写用基材の他の実施例
を示す模式断面図である。
FIG. 4 is a schematic cross-sectional view showing another embodiment of the substrate for transferring conductive protrusions of the present invention.

【図5】本発明の導電性突起物の転写方法の一例を示す
模式断面図である。
FIG. 5 is a schematic cross-sectional view showing an example of a method for transferring a conductive protrusion of the present invention.

【図6】本発明の方法により得られるプローブカード構
造体の一例を示す模式断面図である。
FIG. 6 is a schematic cross-sectional view showing an example of a probe card structure obtained by the method of the present invention.

【符号の説明】[Explanation of symbols]

1 支持体 2 導電性突起物 H 貫通孔 S 導電性突起物転写用基材 1 Support 2 Conductive Protrusion H Through Hole S Conductive Protrusion Transfer Substrate

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 導電性突起物が可溶性の支持体に固定さ
れてなる導電性突起物転写用基材。
1. A substrate for transferring conductive projections, comprising conductive projections fixed to a soluble support.
【請求項2】 導電性突起物が、可溶性の支持体に設け
られた貫通孔にて当該支持体に固定されてなる請求項1
記載の導電性突起物転写用基材。
2. The conductive projection is fixed to the support through a through-hole provided in the soluble support.
The substrate for transferring the conductive projections described.
【請求項3】 導電性突起物が、可溶性の支持体に設け
られた貫通孔の両端部より突出して形成され、両突出部
が上記貫通孔の開口部周縁の全部または一部にて係止さ
れている請求項2記載の導電性突起物転写用基材。
3. A conductive protrusion is formed so as to protrude from both ends of a through hole provided in a soluble support, and both protrusions are locked at all or part of the peripheral edge of the opening of the through hole. The substrate for transferring a conductive protrusion according to claim 2.
【請求項4】 支持体が、有機溶媒またはアルカリ溶液
に対し可溶性である請求項1記載の導電性突起物転写用
基材。
4. The substrate for transferring conductive projections according to claim 1, wherein the support is soluble in an organic solvent or an alkaline solution.
【請求項5】 支持体が、導電性突起物転写側表面に接
着層を有するものである請求項1記載の導電性突起物転
写用基材。
5. The substrate for transferring conductive projections according to claim 1, wherein the support has an adhesive layer on the surface of the conductive projection transfer side.
【請求項6】 請求項1、2、3または5に記載の導電
性突起物転写用基材の導電性突起物を被転写体に接合し
た後、上記基材の支持体を溶解除去することを特徴とす
る導電性突起物の転写方法。
6. The method for bonding a conductive protrusion of the substrate for transferring a conductive protrusion according to claim 1, 2, 3 or 5 to a transfer target, and then removing the support of the substrate by dissolution. And a method for transferring a conductive protrusion.
【請求項7】 請求項1、2、3または5に記載の導電
性突起物転写用基材の導電性突起物をプローブカードの
電極面に接合した後、上記基材の支持体を溶解除去する
ことを特徴とするプローブカード構造体の製造方法。
7. After the conductive projection of the conductive projection transfer substrate according to claim 1, 2, 3 or 5 is bonded to the electrode surface of the probe card, the support of the base is dissolved and removed. A method of manufacturing a probe card structure, comprising:
JP19377193A 1993-08-04 1993-08-04 Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure Pending JPH0750113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19377193A JPH0750113A (en) 1993-08-04 1993-08-04 Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19377193A JPH0750113A (en) 1993-08-04 1993-08-04 Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure

Publications (1)

Publication Number Publication Date
JPH0750113A true JPH0750113A (en) 1995-02-21

Family

ID=16313538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19377193A Pending JPH0750113A (en) 1993-08-04 1993-08-04 Conductive protrusion transferring base material, conductive protrusion transferring method and manufacture of probe card structure

Country Status (1)

Country Link
JP (1) JPH0750113A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10788506B2 (en) 2012-07-03 2020-09-29 The Board Of Trustees Of The Leland Stanford Junior University Scalable bio-element analysis

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10788506B2 (en) 2012-07-03 2020-09-29 The Board Of Trustees Of The Leland Stanford Junior University Scalable bio-element analysis

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