JP2002290022A - Wiring board, its manufacturing method, and electronic device - Google Patents

Wiring board, its manufacturing method, and electronic device

Info

Publication number
JP2002290022A
JP2002290022A JP2001089752A JP2001089752A JP2002290022A JP 2002290022 A JP2002290022 A JP 2002290022A JP 2001089752 A JP2001089752 A JP 2001089752A JP 2001089752 A JP2001089752 A JP 2001089752A JP 2002290022 A JP2002290022 A JP 2002290022A
Authority
JP
Japan
Prior art keywords
solder
bonding pad
hole
solder bonding
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001089752A
Other languages
Japanese (ja)
Inventor
Kiminori Tada
公則 多田
Tomohiro Nitao
智広 仁田尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001089752A priority Critical patent/JP2002290022A/en
Publication of JP2002290022A publication Critical patent/JP2002290022A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16237Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which is capable of surely joining a solder bonding pad that appears from a through-hole provided to a solder-resistant resin layer to the electrode of an electronic part through the intermediary of solder and of normally operating the electronic part mounted on it for a long term. SOLUTION: A solder bonding pad 4 joined to the electrode of an electronic part 5 through the intermediary of solder is provided to an electronic part mounting region on an insulating board 1, and a solder-resistant resin layer 3 which is provided with a through-hole 10 that makes the center of the solder bonding pad 4 exposed is deposited on the electronic part mounting region, so as to cover the peripheral part of the solder bonding pad 4 for the formation of a wiring board. The through-hole 10 whose diameter 10a on a solder bonding pad side is 50 to 95% of the diameter 11b of its opening on the top surface of the resin layer 3, and the solder bonding pad 4 has a nearly spherical recess 11 at its center.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子等の電
子部品を搭載するために用いられる配線基板およびその
製造方法ならびにこの配線基板に半導体素子等の電子部
品を搭載して成る電子装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for mounting an electronic component such as a semiconductor element, a method of manufacturing the same, and an electronic device having the wiring board mounted with an electronic component such as a semiconductor element. It is.

【0002】[0002]

【従来の技術】一般に、現在の電子機器は、移動体通信
機器に代表されるように小型・薄型・軽量・高性能・高
機能・高品質・高信頼性が要求されてきており、このよ
うな電子機器に搭載される電子装置も小型・高密度化が
要求されるようになってきている。そのため、電子装置
を構成する配線基板にも小型・薄型・多端子化が求めら
れてきており、それを実現するために信号導体等の配線
導体の幅を細くするとともにその間隔を狭くし、さらに
配線導体の多層化により高密度配線化が図られている。
2. Description of the Related Art In general, current electronic devices are required to be small, thin, lightweight, high-performance, high-performance, high-quality, and high-reliable, as represented by mobile communication devices. Electronic devices mounted on various electronic devices have also been required to be reduced in size and density. For this reason, there has been a demand for smaller, thinner, and more terminals for the wiring boards that make up the electronic device, and in order to achieve this, the width of wiring conductors such as signal conductors has been reduced and the spacing between them has been reduced. High-density wiring has been achieved by increasing the number of wiring conductors.

【0003】このような高密度配線が可能な配線基板と
して、ビルドアップ法を採用して製作された配線基板が
知られている。ビルドアップ法とは、例えば、ガラスク
ロスやアラミド不布織等の補強材に耐熱性や耐薬品性を
有するエポキシ樹脂に代表される熱硬化性樹脂を含浸さ
せて硬化した芯体上に、エポキシ樹脂等の熱硬化性樹脂
から成るワニスを塗布するとともに加熱硬化して絶縁層
を形成した後、絶縁層にレーザ光で径が50〜200μm程
度のビアホールを形成し、次に、絶縁層表面およびビア
ホール内壁を過マンガン酸カリウム溶液等の粗化液で化
学粗化し、しかる後、無電解銅めっき法および電解銅め
っき法を用いてビアホール内壁および絶縁層表面に配線
導体を形成し、さらに、この絶縁層上に上記と同様の工
程を繰り返して絶縁層や配線導体の形成を行なう配線基
板の製造方法である。また、この配線基板は、その最外
郭の絶縁層表面に、搭載される電子部品等との接続端子
として機能する半田接合パッドや外部電気回路基板の配
線導体と接続される半田接合パッドが形成されており、
さらに、半田接合パッドの外周部を含む絶縁層表面には
半田接合パッドの中央部を露出させる貫通孔を有する耐
半田樹脂層が被着形成されている。
As a wiring board capable of such high-density wiring, a wiring board manufactured by employing a build-up method is known. The build-up method means that, for example, a reinforcing material such as glass cloth or aramid non-woven fabric is impregnated with a thermosetting resin typified by an epoxy resin having heat resistance and chemical resistance, and a core cured by impregnation with After applying a varnish made of a thermosetting resin such as a resin and heat-curing to form an insulating layer, a via hole having a diameter of about 50 to 200 μm is formed in the insulating layer by laser light, and then the insulating layer surface and The inner wall of the via hole is chemically roughened with a roughening solution such as a potassium permanganate solution, and thereafter, a wiring conductor is formed on the inner wall of the via hole and the surface of the insulating layer using an electroless copper plating method and an electrolytic copper plating method. This is a method for manufacturing a wiring board in which an insulating layer and a wiring conductor are formed by repeating the same steps as above on the insulating layer. The wiring board has solder bonding pads formed on the outermost surface of the insulating layer and serving as connection terminals for mounting electronic components and the like and solder bonding pads connected to the wiring conductors of the external electric circuit board. And
Further, on the surface of the insulating layer including the outer peripheral portion of the solder bonding pad, a solder-resistant resin layer having a through hole exposing the central portion of the solder bonding pad is formed.

【0004】なお、このような耐半田樹脂層は、感光性
樹脂と無機粉末フィラーと光開始剤とから成る未硬化樹
脂液をロールコータ法やスクリーン印刷法を用い最外郭
の絶縁層や配線導体・半田接合パッドの全面に所定の厚
みに塗布するとともに、これを乾燥することにより絶縁
層表面に被着形成され、また、貫通孔は、耐半田樹脂層
に露光および現像処理を行うことにより半田接合パッド
上に形成され、光硬化および熱硬化した後、耐半田樹脂
層の残査を除去するために半田接合パッド表面を粗化・
ソフトエッチングすることにより形成される。さらに、
露出した半田接合パッド表面には、半田との濡れ性の良
いニッケル・金めっきが被着されている。また、半田接
合パッド上の貫通孔は半田接合パッド側の径と開口径と
が略等しく、半田接合パッド表面は平坦となっている。
[0004] Such a solder-resistant resin layer is formed by applying an uncured resin liquid comprising a photosensitive resin, an inorganic powder filler and a photoinitiator to the outermost insulating layer or wiring conductor by using a roll coater method or a screen printing method.・ Applied to the entire surface of the solder bonding pad to a predetermined thickness and dried to form a coating on the surface of the insulating layer. The through-hole is exposed and developed on the solder-resistant resin layer to perform soldering. After being formed on the bonding pad, and after light curing and heat curing, the surface of the solder bonding pad is roughened to remove the residue of the solder resistant resin layer.
It is formed by soft etching. further,
The exposed surface of the solder bonding pad is coated with nickel / gold plating having good wettability with solder. Further, the diameter of the through hole on the solder bonding pad is substantially equal to the diameter of the solder bonding pad on the side of the solder bonding pad, and the surface of the solder bonding pad is flat.

【0005】そして、上記の半田接合パッド上の貫通孔
にスクリーン印刷により半田ペーストを充填し、リフロ
ー炉を通すことにより半田ペーストを溶融固化して半田
バンプを形成し、次に、この半田バンプを介して配線基
板の半田接合パッドと電子部品の接続端子とを電気的に
接続し、しかる後、配線基板と電子部品とをアンダーフ
ィル材で接着することにより電子装置が製作される。な
お、この電子装置は外部端子接続用の半田接合パッドを
外部電気回路基板の配線導体に半田バンプを介して接続
することにより外部電気回路基板に実装される。
[0005] A solder paste is filled into the through-holes on the solder bonding pads by screen printing, and the solder paste is melted and solidified by passing through a reflow furnace to form solder bumps. An electronic device is manufactured by electrically connecting the solder bonding pad of the wiring board to the connection terminal of the electronic component through the intermediary, and then bonding the wiring board and the electronic component with an underfill material. This electronic device is mounted on an external electric circuit board by connecting solder joint pads for connecting external terminals to wiring conductors of the external electric circuit board via solder bumps.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、従来の
配線基板は、半田接合パッド上の耐半田樹脂層の貫通孔
において、貫通孔の半田接合パッド側の径と開口径とが
略等しいことから、貫通孔の開口径が90μm程度より小
さくなるとスクリーン印刷時に半田ペーストが貫通孔の
途中までしか充填されず、この状態で配線基板をリフロ
ー炉に通した場合、半田接合パッドと良好に接合されな
い半田バンプが生じてしまい、電子部品の実装時に半田
バンプが半田接合パッドから脱離してしまい接続不良と
なってしまうという問題点を有していた。
However, in the conventional wiring board, the diameter of the through-hole of the solder-resistant resin layer on the solder-bonding pad is substantially equal to the diameter of the through-hole on the side of the solder-bonding pad. When the opening diameter of the through hole is smaller than about 90 μm, the solder paste is filled only halfway through the through hole during screen printing, and when the wiring board is passed through a reflow furnace in this state, the solder bump is not well bonded to the solder bonding pad. This causes a problem in that the solder bumps are detached from the solder bonding pads when the electronic component is mounted, resulting in poor connection.

【0007】また、従来の配線基板は、半田接合パッド
表面が平坦となっていることから、半田バンプの貫通孔
の側面に接する面と半田接合パッド表面に接する面との
角部が直角となり、半田はその表面張力のためにその直
角の角部に浸透し難く角部に空隙が生じてしまい、その
結果、半田バンプと半田接合パッドとの接合面積が減少
して両者の接合強度が低下してしまうという問題点を有
していた。
Further, in the conventional wiring board, since the surface of the solder bonding pad is flat, the corner between the surface in contact with the side surface of the through hole of the solder bump and the surface in contact with the surface of the solder bonding pad is a right angle, Due to the surface tension of the solder, it is difficult for the solder to penetrate the right-angled corners, and voids are created in the corners. As a result, the bonding area between the solder bumps and the solder bonding pads decreases, and the bonding strength between the two decreases. Had the problem that

【0008】さらに、半田バンプにおいて、半田バンプ
の貫通孔の側面に接する面と半田接合パッド表面に接す
る面との角部が半田と半田接合パッドと耐半田樹脂層と
の接する交点と成ることから、電子部品の作動時に生じ
る熱によって発生する、熱膨張係数の異なる半田や半田
接合パッド・耐半田樹脂層の膨脹・収縮による応力がそ
の角部に集中し、このような応力が長期間にわたりその
角部に繰返し印加されると、半田バンプの貫通孔の側面
に接する面と半田接合パッド表面に接する面との角部に
クラックが発生し断線してしまい、電子部品を正常に作
動させることができなくなってしまうという問題点も有
していた。
Furthermore, in the solder bump, the corner between the surface in contact with the side surface of the through hole of the solder bump and the surface in contact with the surface of the solder bonding pad is an intersection between the solder, the solder bonding pad and the solder-resistant resin layer. The stress caused by the expansion and contraction of the solder and solder joint pads and the solder-resistant resin layer with different thermal expansion coefficients generated by the heat generated during the operation of electronic components concentrates on the corners, and such stress is applied for a long time. When voltage is repeatedly applied to the corners, cracks occur at the corners between the surface that contacts the side surface of the through hole of the solder bump and the surface that contacts the surface of the solder bonding pad, causing disconnection, and normal operation of electronic components. There was also a problem that it became impossible.

【0009】また、従来の配線基板の製造方法は、耐半
田樹脂層の貫通孔を露光・現像で形成し、しかる後、耐
半田樹脂層の残査を除去するために半田接合パッド表面
を粗化していることから、耐半田樹脂層表面も同時に粗
化されてしまい、耐半田樹脂層表面の樹脂が劣化して実
装時のアンダーフィル材と耐半田樹脂層表面との密着強
度が低下してしまうという問題点を有していた。
Further, in the conventional method of manufacturing a wiring board, a through-hole of a solder-resistant resin layer is formed by exposure and development, and then the surface of the solder bonding pad is roughened to remove the residue of the solder-resistant resin layer. The surface of the solder-resistant resin layer is also roughened at the same time, the resin on the surface of the solder-resistant resin layer deteriorates, and the adhesion strength between the underfill material and the surface of the solder-resistant resin layer during mounting decreases. Had the problem that

【0010】本発明はかかる従来技術の問題点に鑑み完
成されたものであり、その目的は、耐半田樹脂層に設け
られた貫通孔の露出した半田接合パッドと電子部品の電
極とを半田バンプを介して確実に接合でき、配線基板に
搭載した電子部品を長期間にわたり正常に作動させるこ
とが可能な配線基板およびその製造方法ならびに電子装
置を提供することにある。
The present invention has been completed in view of the problems of the prior art, and an object of the present invention is to form a solder bump between an exposed solder joint pad provided in a solder-resistant resin layer and an electrode of an electronic component by a solder bump. It is an object of the present invention to provide a wiring board, a method of manufacturing the same, and an electronic device, which can be securely joined via a wiring board and can normally operate electronic components mounted on the wiring board for a long period of time.

【0011】[0011]

【課題を解決するための手段】本発明の配線基板は、絶
縁基板上の電子部品実装領域に電子部品の電極が半田を
介して接合される半田接合パッドを設け、電子部品実装
領域に半田接合パッドの外周部を覆うとともに半田接合
パッドの中央部を露出させる貫通孔を有する耐半田樹脂
層を被着させて成る配線基板であって、貫通孔は、その
半田接合パッド側の径が開口径の50〜95%であり、半田
接合パッドは、その中央部に略球面状の凹部を有するこ
とを特徴とするものである。
According to the present invention, there is provided a wiring board provided with a solder bonding pad to which an electrode of an electronic component is bonded via solder in an electronic component mounting area on an insulating substrate, and a solder bonding pad in the electronic component mounting area. A wiring board comprising a solder-resistant resin layer having a through hole that covers an outer peripheral portion of the pad and exposes a central portion of the solder bonding pad, wherein the diameter of the through hole has an opening diameter on the solder bonding pad side. And the solder bonding pad has a substantially spherical concave portion at the center thereof.

【0012】また、本発明の配線基板の製造方法は、絶
縁基板上の電子部品実装領域に電子部品の電極が半田を
介して接合される半田接合パッドを形成する工程と、電
子部品実装領域に半田接合パッドを覆って耐半田樹脂層
を被着させる工程と、半田接合パッドの中央部上の耐半
田樹脂層に、波長が8〜11μmのレーザ光を照射して貫
通孔を形成する工程と、貫通孔により露出した半田接合
パッドの中央部に、波長が0.1〜1μmのレーザ光を照
射して略球面状の凹部を形成する工程とを順次行なうこ
とを特徴とするものである。
Further, the method of manufacturing a wiring board according to the present invention includes a step of forming a solder joint pad to which an electrode of an electronic component is joined via solder in an electronic component mounting area on an insulating substrate; A step of covering the solder bonding pad with a solder-resistant resin layer, and a step of irradiating the solder-resistant resin layer on the central part of the solder bonding pad with a laser beam having a wavelength of 8 to 11 μm to form a through hole. A step of irradiating a laser beam having a wavelength of 0.1 to 1 μm to a central portion of the solder bonding pad exposed by the through hole to form a substantially spherical concave portion.

【0013】さらに、本発明の電子装置は、上記の配線
基板の電子部品実装領域に電子部品を実装し、半田接合
パッドと電子部品の電極とを半田を介して接続したこと
を特徴とするものである。
Furthermore, an electronic device according to the present invention is characterized in that an electronic component is mounted on the electronic component mounting area of the wiring board, and a solder joint pad and an electrode of the electronic component are connected via solder. It is.

【0014】本発明の配線基板によれば、耐半田樹脂層
の貫通孔の半田接合パッド側の径を開口径の50〜95%と
したことから、貫通孔の縦断面が、開口径が半田接合パ
ッド側の径より大きい漏斗形状となり、貫通孔の開口径
が90μm程度より小さくなってもスクリーン印刷時に半
田ペーストを貫通孔に容易にかつ充分に充填することが
でき、その結果、配線基板をリフロー炉に通して半田ペ
ーストを溶融固化して半田バンプを形成した場合、半田
接合パッドと半田バンプとを確実に接合でき、電子部品
の実装時に半田接合パッドと半田バンプとが剥離してし
まうことはなく、電気的接続が良好な配線基板とするこ
とができる。
According to the wiring board of the present invention, since the diameter of the through hole of the solder-resistant resin layer on the side of the solder bonding pad is 50 to 95% of the opening diameter, the vertical cross section of the through hole has an opening diameter of solder. It becomes a funnel shape larger than the diameter of the bonding pad side, and even if the opening diameter of the through hole is smaller than about 90 μm, the solder paste can be easily and sufficiently filled into the through hole during screen printing, and as a result, the wiring board When the solder paste is melted and solidified to form solder bumps through a reflow furnace, the solder joint pads and solder bumps can be securely joined, and the solder joint pads and solder bumps may peel off when mounting electronic components. And a wiring board with good electrical connection can be obtained.

【0015】また、本発明の配線基板によれば、耐半田
樹脂層の貫通孔の半田接合パッド側の径を開口径の50〜
95%とするとともに貫通孔から露出した半田接合パッド
の中央部に略球面状の凹部を形成したことから、半田バ
ンプの貫通孔の側面に接する面と半田接合パッド表面に
接する面との角部の形状が曲線状となり、半田をその角
部に容易に浸透させることができその角部に空隙を生じ
ることがないので、半田バンプと半田接合パッドとの接
合面積が増加し、その結果、半田バンプと半田接合パッ
ドとの接合強度が低下することがない。さらに、電子部
品の作動時に生じる熱によって発生する、熱膨張係数の
異なる半田や半田接合パッド・耐半田樹脂層の膨脹・収
縮による応力がその角部に集中してその角部にクラック
を発生させることはなく、電子部品を長期間にわたり正
常に作動させることができる配線基板とすることができ
る。
Further, according to the wiring board of the present invention, the diameter of the through hole of the solder-resistant resin layer on the side of the solder bonding pad is set to 50 to 50 mm of the opening diameter.
The corner between the surface that contacts the side surface of the through hole of the solder bump and the surface that touches the surface of the solder bonding pad because 95% is set and a substantially spherical concave portion is formed in the center of the solder bonding pad exposed from the through hole. Has a curved shape, the solder can easily penetrate into the corners, and no voids are formed in the corners, so that the bonding area between the solder bumps and the solder bonding pads increases, and as a result, The bonding strength between the bump and the solder bonding pad does not decrease. Furthermore, the stress generated by the heat generated during the operation of the electronic component due to the expansion and contraction of the solder and the solder joint pad / solder-resistant resin layer having different coefficients of thermal expansion concentrates on the corners, causing cracks at the corners. Thus, a wiring board that can normally operate electronic components for a long period of time can be provided.

【0016】本発明の配線基板の製造方法によれば、半
田接合パッドの中央部上の耐半田樹脂層に、波長が8〜
11μmのレーザ光を照射して貫通孔を形成した後に、貫
通孔から露出した半田接合パッドの中央部に波長が0.1
〜1μmのレーザ光を照射して略球面状の凹部を形成す
ることから、波長が8〜11μmのレーザ光で耐半田樹脂
層に貫通孔を容易に形成でき、また、半田接合パッド上
に耐半田樹脂が残ったとしても、波長が0.1〜1μmの
レーザ光で半田接合パッド上の残った耐半田樹脂を完全
に除去できるので、粗化工程が省略できるとともに耐半
田樹脂層表面の樹脂を劣化してしまうことはなく、実装
時のアンダーフィル材と耐半田樹脂層との接着強度が低
下することはない。
According to the method of manufacturing a wiring board of the present invention, the wavelength of 8 to 10 mm is applied to the solder-resistant resin layer on the central portion of the solder joint pad.
After irradiating a laser beam of 11 μm to form a through hole, a wavelength of 0.1 mm is applied to the center of the solder bonding pad exposed from the through hole.
Since a substantially spherical concave portion is formed by irradiating a laser beam of about 1 μm, a through hole can be easily formed in the solder-resistant resin layer with a laser beam having a wavelength of 8 to 11 μm. Even if the solder resin remains, the residual solder resin on the solder bonding pads can be completely removed with a laser beam having a wavelength of 0.1 to 1 μm, so that the roughening step can be omitted and the resin on the surface of the solder resin layer deteriorates. The bonding strength between the underfill material and the solder-resistant resin layer at the time of mounting does not decrease.

【0017】本発明の電子装置によれば、上記の配線基
板の電子部品実装領域に電子部品を実装し、半田接合パ
ッドと電子部品の電極とを半田を介して接続したことか
ら、電子部品が動作時に発する熱による応力が長期間に
わたり半田バンプの貫通孔の側面に接する面と半田接合
パッド表面に接する面との角部に繰返し印加されるても
その角部に応力が集中することはなく、角部にクラック
の発生を防止でき、その結果、電子部品を長期間にわた
り正常に作動させることができる電子装置とすることが
できる。
According to the electronic device of the present invention, the electronic component is mounted on the electronic component mounting area of the wiring board, and the solder bonding pad and the electrode of the electronic component are connected via the solder. Even if the stress due to the heat generated during operation is repeatedly applied to the corner between the surface in contact with the side surface of the through hole of the solder bump and the surface in contact with the surface of the solder bonding pad for a long time, the stress does not concentrate on the corner. In addition, it is possible to prevent the occurrence of cracks at the corners, and as a result, it is possible to provide an electronic device that can normally operate electronic components for a long period of time.

【0018】[0018]

【発明の実施の形態】次に、本発明の配線基板および電
子装置を図面に基づいて詳細に説明する。図1は、本発
明の配線基板およびこれに電子部品を搭載して電子装置
に適用した場合の実施の形態の一例を示す断面図であ
り、図2は、この要部断面図である。これらの図におい
て、1は絶縁基板、2は配線導体、3は耐半田樹脂層、
4は半田接合パッドであり、主にこれらで本発明の配線
基板が構成され、これに半導体素子等の電子部品5を搭
載することにより本発明の電子装置が構成される。
Next, a wiring board and an electronic device according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment in which an electronic component is mounted on a wiring board of the present invention and applied to an electronic device, and FIG. 2 is a cross-sectional view of a main part thereof. In these figures, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a solder-resistant resin layer,
Reference numeral 4 denotes solder bonding pads, which mainly constitute a wiring board of the present invention, and an electronic device of the present invention is formed by mounting an electronic component 5 such as a semiconductor element thereon.

【0019】絶縁基板1は、電子部品を搭載する機能を
有し、例えばガラス繊維を縦横に織り込んだガラスクロ
スにエポキシ樹脂やビスマレイミドトリアジン樹脂等の
熱硬化性樹脂を含浸させて成る板状の芯体1aの上下面
にエポキシ樹脂や変性ポリフェニレンエーテル樹脂等の
熱硬化性樹脂から成る絶縁層1bをそれぞれ複数層ずつ
積層して成る有機材料系の多層板であり、その上面から
下面にかけては銅箔や銅めっき膜等から成る複数の配線
導体2が形成されている。
The insulating substrate 1 has a function of mounting electronic components. For example, the insulating substrate 1 has a plate-like shape obtained by impregnating a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin into a glass cloth in which glass fibers are woven vertically and horizontally. An organic material-based multilayer board in which a plurality of insulating layers 1b made of a thermosetting resin such as an epoxy resin or a modified polyphenylene ether resin are laminated on the upper and lower surfaces of the core body 1a, respectively. A plurality of wiring conductors 2 made of a foil, a copper plating film or the like are formed.

【0020】絶縁基板1を構成する芯体1aは、絶縁層
1bの支持体として機能し、厚みが0.3〜1.5mm程度で
あり、その上面から下面にかけて直径が0.1〜1.0mm程
度の複数のスルーホール6を有している。そして、その
上下面および各スルーホール6の内壁には配線導体2の
一部が被着されており、上下面の配線導体2がスルーホ
ール6を介して電気的に接続されている。
The core 1a constituting the insulating substrate 1 functions as a support for the insulating layer 1b, has a thickness of about 0.3 to 1.5 mm, and has a plurality of through-holes having a diameter of about 0.1 to 1.0 mm from the upper surface to the lower surface. It has a hole 6. A part of the wiring conductor 2 is attached to the upper and lower surfaces and the inner wall of each through hole 6, and the upper and lower wiring conductors 2 are electrically connected through the through holes 6.

【0021】このような芯体1aは、ガラスクロスに未
硬化の熱硬化性樹脂を含浸させたシートを熱硬化させた
後、これに上面から下面にかけてドリル加工を施すこと
により製作される。なお、芯体1a上下面の配線導体2
は、芯体1a用のシートの上下全面に厚みが3〜50μm
の銅箔を貼着しておくとともにこの銅箔をシートの硬化
後にエッチング加工することにより所定のパターンに形
成される。また、スルーホール6内壁の配線導体2は、
芯体1aにスルーホール6を設けた後に、このスルーホ
ール6に無電解銅めっき法および電解銅めっき法により
厚みが3〜50μm程度の銅めっき膜を析出させることに
より形成される。
Such a core body 1a is manufactured by thermally curing a sheet in which a glass cloth is impregnated with an uncured thermosetting resin, and then drilling the sheet from the upper surface to the lower surface. The wiring conductors 2 on the upper and lower surfaces of the core 1a
Has a thickness of 3 to 50 μm on the entire upper and lower surfaces of the sheet for the core 1a.
And a predetermined pattern is formed by attaching the copper foil and etching the copper foil after curing the sheet. The wiring conductor 2 on the inner wall of the through hole 6
After the through hole 6 is provided in the core body 1a, the through hole 6 is formed by depositing a copper plating film having a thickness of about 3 to 50 μm in the through hole 6 by an electroless copper plating method and an electrolytic copper plating method.

【0022】さらに、芯体1aは、そのスルーホール6
の内部にエポキシ樹脂やビスマレイミドトリアジン樹脂
等の熱硬化性樹脂から成る樹脂柱7が充填されている。
樹脂柱7は、スルーホール6を塞ぐことによりスルーホ
ール6の直上および直下に絶縁層1bを形成可能とする
ためのものであり、未硬化のペースト状の熱硬化性樹脂
をスルーホール6内にスクリーン印刷法により充填し、
これを熱硬化させた後、その上下面を略平坦に研磨する
ことにより形成される。そして、この樹脂柱7を含む芯
体1aの上下面に絶縁層1bが積層されている。
Further, the core body 1a has its through hole 6
Is filled with a resin column 7 made of a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin.
The resin pillar 7 is for enabling the insulating layer 1b to be formed directly above and directly below the through hole 6 by closing the through hole 6, and the uncured paste-like thermosetting resin is placed in the through hole 6. Filled by screen printing method,
After being thermally cured, the upper and lower surfaces are polished so as to be substantially flat. An insulating layer 1b is laminated on the upper and lower surfaces of the core 1a including the resin columns 7.

【0023】芯体1aの上下面に積層された絶縁層1b
は、それぞれの厚みが10〜80μm程度であり、各層の上
面から下面にかけて直径が20〜100μm程度のビアホー
ル8を有している。これらの絶縁層1bは、配線導体2
を高密度に配線するための絶縁間隔を提供するためのも
のである。そして、上層の配線導体2と下層の配線導体
2とをビアホール8内壁に形成された配線導体2を介し
て電気的に接続することにより高密度配線を立体的に形
成可能としている。
Insulating layers 1b laminated on the upper and lower surfaces of the core 1a
Has via holes 8 each having a thickness of about 10 to 80 μm and a diameter of about 20 to 100 μm from the upper surface to the lower surface of each layer. These insulating layers 1b are made of a wiring conductor 2
In order to provide an insulating space for wiring at high density. By electrically connecting the upper layer wiring conductor 2 and the lower layer wiring conductor 2 via the wiring conductor 2 formed on the inner wall of the via hole 8, a high-density wiring can be formed three-dimensionally.

【0024】このような絶縁層1bは、厚みが20〜60μ
m程度の未硬化の熱硬化性樹脂のフィルムを芯体1a上
下面に貼着し、これを熱硬化させるとともにレーザ加工
によりビアホール8を穿孔し、さらにその上に同様にし
て次の絶縁層1bを順次積み重ねることによって形成さ
れる。なお、絶縁層1b表面およびビアホール8内壁に
形成された配線導体2は、搭載される半導体素子等の電
子部品5の各電極を外部電気回路基板(図示せず)に接
続するための導電路としての機能を有し、各絶縁層1b
を形成する毎に各絶縁層1b表面およびビアホール8内
壁に3〜50μm程度の厚みの銅めっき膜を従来周知のセ
ミアディティブ法やサブトラクティブ法等のパターン形
成法を採用して所定のパターンを被着させることによっ
て形成される。
Such an insulating layer 1b has a thickness of 20 to 60 μm.
m of uncured thermosetting resin film is adhered to the upper and lower surfaces of the core body 1a, which is thermally cured, a via hole 8 is formed by laser processing, and the next insulating layer 1b is similarly formed thereon. Are sequentially stacked. The wiring conductor 2 formed on the surface of the insulating layer 1b and the inner wall of the via hole 8 serves as a conductive path for connecting each electrode of the electronic component 5 such as a mounted semiconductor element to an external electric circuit board (not shown). Function of each insulating layer 1b
Each time a pattern is formed, a copper plating film having a thickness of about 3 to 50 μm is formed on the surface of each insulating layer 1b and the inner wall of the via hole 8 by a conventionally known pattern forming method such as a semi-additive method or a subtractive method. It is formed by putting on.

【0025】さらに、絶縁層1bの一方の最外層表面に
形成された配線導体2の一部は、電子部品5の各電極に
例えば鉛−錫から成る半田バンプ9を介して接合される
電子部品接続用の半田接合パッド4を形成し、また、絶
縁層1bの他方の最外層表面に形成された配線導体2の
一部は、外部電気回路基板の各電極に例えば鉛−錫から
成る半田バンプ9を介して接続される外部接続用の半田
接合パッド4を形成している。
Further, a part of the wiring conductor 2 formed on one outermost layer surface of the insulating layer 1b is joined to each electrode of the electronic component 5 via a solder bump 9 made of, for example, lead-tin. A part of the wiring conductor 2 formed on the surface of the other outermost layer of the insulating layer 1b forms a solder bonding pad 4 for connection, and a solder bump made of, for example, lead-tin is formed on each electrode of the external electric circuit board. An external connection solder bonding pad 4 connected via the wiring 9 is formed.

【0026】このような半田接合パッド4は、その形状
が略円形状で、厚みが3〜50μm程度、直径が電子部品
接続用の半田接合パッド4であれば50〜100μm程度、
外部接続用の半田接合パッド4であれば0.4〜1.0mm程
度である。
Such a solder bonding pad 4 has a substantially circular shape, a thickness of about 3 to 50 μm, and a diameter of about 50 to 100 μm if the solder bonding pad 4 is for connecting electronic parts.
In the case of the solder connection pad 4 for external connection, it is about 0.4 to 1.0 mm.

【0027】また、絶縁基体1は、その表面の半田接合
パッド4の外周部を含む電子部品実装領域に半田接合パ
ッド4の中央部を露出させる貫通孔10を有する耐半田樹
脂層3が被着されている。耐半田樹脂層3は、その厚み
が10〜50μm程度であり、例えばアクリル変性エポキシ
樹脂等の感光性樹脂と光開始剤等とから成る混合物に30
〜70重量%のシリカやタルク等の無機粉末フィラーを含
有させた絶縁材料から成り、隣接する半田接合パッド4
同士が半田バンプ9により電気的に短絡することを防止
するとともに、半田接合パッド4と絶縁基板1との接合
強度を向上させる機能を有する。なお、貫通孔10は、そ
の直径が電子部品接続用の貫通孔10であれば40〜80μm
程度であり、外部接続用の貫通孔10であれば0.35〜0.9
mm程度である。
The insulating substrate 1 is covered with a solder-resistant resin layer 3 having a through-hole 10 exposing a central portion of the solder joint pad 4 in an electronic component mounting area including an outer peripheral portion of the solder joint pad 4 on the surface thereof. Have been. The solder-resistant resin layer 3 has a thickness of about 10 to 50 μm, and is made of, for example, a mixture of a photosensitive resin such as an acrylic-modified epoxy resin and a photoinitiator.
An insulating material containing an inorganic powder filler such as silica or talc of about 70% by weight;
It has a function of preventing an electrical short circuit between them by the solder bumps 9 and improving the bonding strength between the solder bonding pad 4 and the insulating substrate 1. The through hole 10 has a diameter of 40 to 80 μm if the diameter of the through hole 10 is for connecting electronic components.
About 0.35 to 0.9 if through hole 10 for external connection
mm.

【0028】このような耐半田樹脂層3は、感光性樹脂
と光開始剤と無機粉末フィラーとから成る未硬化樹脂フ
ィルムあるいは熱硬化性樹脂と無機粉末フィラーとから
成る未硬化樹脂フィルムを絶縁基板1の上下面の半田接
合パッド4を含む全面に貼着した後、これをUV硬化お
よび熱硬化させることにより形成され、貫通孔10は、耐
半田樹脂層3の半田接合パッド4の中央部に対応する位
置に8〜11μmの波長を有するレーザ光を照射すること
により形成される。
The solder-resistant resin layer 3 is formed by forming an uncured resin film composed of a photosensitive resin, a photoinitiator and an inorganic powder filler or an uncured resin film composed of a thermosetting resin and an inorganic powder filler on an insulating substrate. 1 is adhered to the entire surface including the solder joint pads 4 on the upper and lower surfaces, and is formed by UV curing and heat curing. The through hole 10 is formed at the center of the solder joint pads 4 of the solder resistant resin layer 3. It is formed by irradiating a corresponding position with a laser beam having a wavelength of 8 to 11 μm.

【0029】また、貫通孔10から露出した半田接合パッ
ド4には、略球面状の凹部11が形成されている。この略
球面状の凹部11は、露出した半田接合パッド4に波長が
0.1〜1μmのレーザ光を照射することにより形成され
る。
The solder bonding pad 4 exposed from the through hole 10 has a substantially spherical concave portion 11 formed therein. The substantially spherical concave portion 11 has a wavelength on the exposed solder bonding pad 4.
It is formed by irradiating a laser beam of 0.1 to 1 μm.

【0030】なお、8〜11μmの波長を有するレーザ光
としては炭酸ガスレーザ等が用いられ、0.1〜1μmの
波長を有するレーザ光としてはYAGレーザやエキシマ
レーザ等が用いられている。また、レーザ光のエネルギ
ーは、電子部品接続用の貫通孔10では0.5〜2.0mj程
度、外部接続用の貫通孔10では60〜100mj程度であ
る。
As a laser beam having a wavelength of 8 to 11 μm, a carbon dioxide laser or the like is used, and as a laser beam having a wavelength of 0.1 to 1 μm, a YAG laser, an excimer laser, or the like is used. The energy of the laser light is about 0.5 to 2.0 mj in the through-hole 10 for connecting electronic components, and about 60 to 100 mj in the through-hole 10 for external connection.

【0031】本発明の配線基板においては、貫通孔10の
半田接合パッド4側の径10aが開口径10bの50〜95%で
あることが重要である。貫通孔10の半田接合パッド4側
の径10aを開口径10bの50〜95%とすることにより、貫
通孔10の縦断面形状が、開口径10bが半田接合パッド4
側の径10aより大きい漏斗形状となり、貫通孔10の直径
が90μm程度より小さくなってもスクリーン印刷時に半
田ペーストを貫通孔10に容易にかつ充分に充填すること
ができ、その後、配線基板をリフロー炉を通すことによ
り半田ペーストを溶融固化して半田バンプを形成した場
合、半田接合パッド4と半田バンプ9とを確実に接合で
き、電子部品5の実装時に半田接合パッド4と半田バン
プ9とが剥離することはなく、電気的接続が良好な配線
基板とすることができる。
In the wiring board of the present invention, it is important that the diameter 10a of the through hole 10 on the solder bonding pad 4 side is 50 to 95% of the opening diameter 10b. By setting the diameter 10a of the through hole 10 on the solder bonding pad 4 side to 50 to 95% of the opening diameter 10b, the vertical cross-sectional shape of the through hole 10 is such that the opening diameter 10b is
Even if the diameter of the through hole 10 becomes smaller than about 90 μm, the solder paste can be easily and sufficiently filled in the through hole 10 during screen printing, and then the wiring board is reflowed. When the solder paste is melted and solidified by passing through a furnace to form solder bumps, the solder bonding pads 4 and the solder bumps 9 can be reliably bonded, and the solder bonding pads 4 and the solder bumps 9 are mounted when the electronic component 5 is mounted. A wiring board with good electrical connection can be obtained without peeling.

【0032】このような半田接合パッド4側の径10aが
開口径10bの50〜95%となる貫通孔10は、半田接合パッ
ド4中央上の耐半田樹脂層3に8〜11μmの波長を有す
るレーザ光を所定のエネルギーで数回照射することによ
り形成される。
The through hole 10 in which the diameter 10a on the solder bonding pad 4 side is 50 to 95% of the opening diameter 10b has a wavelength of 8 to 11 μm in the solder resistant resin layer 3 on the center of the solder bonding pad 4. It is formed by irradiating a laser beam several times with a predetermined energy.

【0033】なお、貫通孔10の半田接合パッド4側の径
10aが開口径10bの50%未満であると,半田接合パッド
4と半田バンプ9との接合面積が小さくなり両者の接合
強度が低下する傾向にあり、また、95%より大きいと半
田ペーストの印刷時に貫通孔10への半田ペーストの充填
が困難と成り、配線基板をリフロー炉に通した場合、半
田接合パッド4と良好に接合されない半田バンプ9が生
じてしまう傾向がある。従って、貫通孔10の半田接合パ
ッド4側の径10aが開口径10bの50〜95%であることが
重要である。なお、貫通孔10の半田接合パッド4側の径
10aとは貫通孔10の半田接合パッド4と接している径を
示し、開口径10bとは配線基板表面側の貫通孔10の開口
の径を示している。
The diameter of the through hole 10 on the side of the solder bonding pad 4
If 10a is less than 50% of the opening diameter 10b, the bonding area between the solder bonding pad 4 and the solder bump 9 tends to be small, and the bonding strength between them tends to decrease. At times, it becomes difficult to fill the through-hole 10 with solder paste, and when the wiring board is passed through a reflow furnace, there is a tendency that solder bumps 9 that are not well bonded to the solder bonding pads 4 are generated. Therefore, it is important that the diameter 10a of the through hole 10 on the solder bonding pad 4 side is 50 to 95% of the opening diameter 10b. The diameter of the through hole 10 on the solder bonding pad 4 side
10a indicates the diameter of the through hole 10 in contact with the solder bonding pad 4, and 10b indicates the diameter of the opening of the through hole 10 on the surface of the wiring board.

【0034】また、本発明の配線基板においては、半田
接合パッド4の中央部を略球面状の凹部11とすることが
重要である。半田接合パッド4の中央部を略球面状の凹
部11とすることにより、半田バンプ9の貫通孔10の側面
に接する面と半田接合パッド4表面に接する面との角部
の形状が曲線状となり、半田をその角部に容易に充填す
ることができ角部に空隙を生じることがないので、半田
バンプ9と半田接合パッド4との接合面積が増加し、そ
の結果、半田バンプ9と半田接合パッド4との接合強度
が低下することがない配線基板とすることができる。
Further, in the wiring board of the present invention, it is important that the central portion of the solder bonding pad 4 be a substantially spherical concave portion 11. By forming the central portion of the solder bonding pad 4 into a substantially spherical concave portion 11, the shape of the corner between the surface of the solder bump 9 that contacts the side surface of the through hole 10 and the surface that contacts the surface of the solder bonding pad 4 becomes curved. Since the corners can be easily filled with solder and no voids are formed in the corners, the bonding area between the solder bumps 9 and the solder bonding pads 4 increases, and as a result, the solder bumps 9 and the solder bonding It is possible to provide a wiring substrate in which the bonding strength with the pad 4 does not decrease.

【0035】さらに、凹部11は、その深さ12が半田接合
パッド4の厚みの1/10〜1/2であることが好まし
い。凹部11の深さ12が半田接合パッド4の厚みの1/10
未満であると、半田バンプ9の耐半田樹脂層3の側面に
接する面と半田接合パッド4表面に接する面との角部の
形状が十分に曲線状とならず、半田バンプ9のこの角部
に熱応力が集中してクラックが生じ電気的に断線してし
まい易く成る傾向があり、また、1/2を超えると半田
接合パッド4の中央部の厚みが薄くなり半田接合パッド
4が絶縁基板1から剥離してしまい易く成る傾向があ
る。従って、凹部11の深さ12は、半田接合パッド4の厚
みの1/10〜1/2であることが好ましい。
Further, it is preferable that the depth 12 of the recess 11 is 1/10 to 1/2 of the thickness of the solder bonding pad 4. The depth 12 of the recess 11 is 1/10 of the thickness of the solder joint pad 4
If it is less than the above, the shape of the corner between the surface of the solder bump 9 contacting the side surface of the solder-resistant resin layer 3 and the surface contacting the surface of the solder bonding pad 4 will not be sufficiently curved, and When the stress exceeds 1/2, the thickness of the central portion of the solder bonding pad 4 becomes thin and the solder bonding pad 4 becomes insulated. 1 tends to be easily peeled off. Therefore, the depth 12 of the recess 11 is preferably 1/10 to 1/2 of the thickness of the solder bonding pad 4.

【0036】このような略球面状の凹部11は、貫通孔10
により露出した半田接合パッド4中央部に0.1〜1μm
の波長を有するレーザ光を所定のエネルギーで数回照射
することにより形成される。
The recess 11 having a substantially spherical shape is formed in the through hole 10.
0.1 to 1 µm at the center of the solder bonding pad 4 exposed by
Is formed by irradiating a laser beam having a predetermined wavelength several times with predetermined energy.

【0037】そして、この配線基板においては、半田接
合パッド4に電子部品5の各電極を半田バンプ9を介し
て接合して電子部品5を搭載するとともに配線基板と電
子部品5とをアンダーフィル材13で接着し、さらに、こ
の電子部品5を図示しない蓋体やポッティング樹脂によ
り封止することによって電子装置と成り、この電子装置
における半田接合パッド4を半田バンプ9を介して外部
電気回路基板の配線導体に接続することにより本発明の
電子装置が外部電気回路基板に実装されることとなる。
In this wiring board, the electrodes of the electronic component 5 are bonded to the solder bonding pads 4 via the solder bumps 9 to mount the electronic component 5 and to connect the wiring board and the electronic component 5 to each other with an underfill material. An electronic device is formed by bonding the electronic component 5 with a cover 13 and sealing the electronic component 5 with a lid or a potting resin (not shown). The solder bonding pad 4 in the electronic device is connected to an external electric circuit board via a solder bump 9. By connecting to the wiring conductor, the electronic device of the present invention is mounted on the external electric circuit board.

【0038】かくして本発明の配線基板およびこれを用
いた電子装置によれば、耐半田樹脂層3に設けられた貫
通孔10の露出した半田接合パッド3と電子部品5の電極
とを半田を介して確実に接合でき、配線基板に搭載した
電子部品5を長期間にわたり正常に作動させることが可
能な配線基板およびこれを用いた電子装置を提供するこ
とにある。
Thus, according to the wiring board of the present invention and the electronic device using the same, the solder bonding pad 3 in which the through hole 10 provided in the solder-resistant resin layer 3 is exposed and the electrode of the electronic component 5 are connected via the solder. It is an object of the present invention to provide a wiring board and an electronic device using the same, which can securely and securely join the electronic component 5 mounted on the wiring board for a long period of time to operate normally.

【0039】なお、本発明は、上述の実施の形態の一例
に限定されるものではなく、本発明の要旨を逸脱しない
範囲であれば種々の変更が可能であることはいうまでも
ない。例えば、上述の実施の形態の一例では、電子部品
5と接続する半田接合パッド4上部の耐半田樹脂層3に
貫通孔10を穿設するとともにその上部に略球面状の凹部
11を形成した例について詳述したが、外部電気回路基板
の配線導体と接続する半田接合パッド4についても適用
が可能である。
The present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, a through-hole 10 is formed in the solder-resistant resin layer 3 above the solder bonding pad 4 connected to the electronic component 5 and a substantially spherical concave portion is formed on the through-hole 10.
Although the example in which 11 is formed has been described in detail, the present invention is also applicable to the solder joint pad 4 connected to the wiring conductor of the external electric circuit board.

【0040】次に、本発明の配線基板の製造方法につい
て上述の配線基板を製造する場合を例にとって説明す
る。
Next, a method of manufacturing a wiring board according to the present invention will be described with reference to an example of manufacturing the above-described wiring board.

【0041】まず、絶縁基体1を構成する芯体1aを準
備する。芯体1aは、ガラス繊維を縦横に織り込んだガ
ラスクロスにエポキシ樹脂やビスマレイミドトリアジン
樹脂等の熱硬化性樹脂を含浸させたシートを仮硬化する
ことにより形成される。
First, a core 1a constituting the insulating base 1 is prepared. The core 1a is formed by temporarily curing a sheet in which a glass cloth in which glass fibers are woven vertically and horizontally is impregnated with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin.

【0042】次に、この芯体1aの表面に厚みが3〜50
μmの銅箔を重ね合わせて加圧・加熱することにより、
芯体1aの表面に配線導体2と成る銅箔を被着形成し、
その後、表面に配線導体2と成る銅箔を被着形成した芯
体1aの上面から下面にかけてドリルを用いてスルーホ
ール6を穿設し、しかる後、配線導体2と成る銅箔をエ
ッチング加工することにより所定のパターンを形成し、
さらに、スルーホール6の内壁に、無電解銅めっき法お
よび電解銅めっき法を採用して厚みが3〜50μm程度の
銅めっき膜を析出させることにより芯体1aの表面およ
びスルーホール6の内壁に配線導体2を形成する。な
お、スルーホール6にはその内部にエポキシ樹脂やビス
マレイミドトリアジン樹脂等の熱硬化性樹脂から成る樹
脂柱7を、未硬化のペースト状の熱硬化性樹脂をスルー
ホール6内にスクリーン印刷法により充填しておくこと
が好ましく、また、これを熱硬化させた後、その上下面
を略平坦に研磨しておくことが好ましい。
Next, a thickness of 3 to 50 is applied to the surface of the core 1a.
By overlaying and pressing and heating copper foil of μm,
A copper foil serving as a wiring conductor 2 is adhered and formed on the surface of the core body 1a,
Thereafter, through holes 6 are drilled from the upper surface to the lower surface of the core body 1a having the copper foil to be the wiring conductor 2 formed on the surface thereof, and then the copper foil to be the wiring conductor 2 is etched. To form a predetermined pattern,
Furthermore, a copper plating film having a thickness of about 3 to 50 μm is deposited on the inner wall of the through hole 6 by using an electroless copper plating method and an electrolytic copper plating method, so that the surface of the core body 1 a and the inner wall of the through hole 6 are formed. The wiring conductor 2 is formed. The through-hole 6 has a resin column 7 made of a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin inside, and an uncured paste-like thermosetting resin inside the through-hole 6 by screen printing. It is preferable to fill it, and it is preferable to polish the upper and lower surfaces thereof substantially flat after heat curing.

【0043】次に、表面およびスルーホール6の内壁に
配線導体2を形成した芯体1aの樹脂柱7を含む上下面
にエポキシ樹脂や変性ポリフェニレンエーテル樹脂等の
熱硬化性樹脂から成る絶縁層1bを積層する。このよう
な絶縁層1bは、未硬化の熱硬化性樹脂フィルムを芯体
1aの上下面に貼着するとともにこれを熱硬化すること
により形成される。
Next, an insulating layer 1b made of a thermosetting resin such as an epoxy resin or a modified polyphenylene ether resin is formed on the upper and lower surfaces including the resin pillars 7 of the core 1a having the wiring conductor 2 formed on the surface and the inner wall of the through hole 6. Are laminated. Such an insulating layer 1b is formed by attaching an uncured thermosetting resin film to the upper and lower surfaces of the core 1a and thermally curing the same.

【0044】さらに、絶縁層1bに、レーザ光を用いて
ビアホール8を穿設するとともに、絶縁層1bの表面お
よびビアホール8の内壁に厚みが3〜50μm程度の銅め
っき膜を従来周知のセミアディティブ法等により所定の
パターンに形成する。そして、本発明の実施例では、こ
のような表面およびビアホール8の内壁に配線導体2を
有する絶縁層1bを芯体1aの上下面に複数層形成して
いる。
Further, a via hole 8 is formed in the insulating layer 1b by using a laser beam, and a copper plating film having a thickness of about 3 to 50 μm is formed on the surface of the insulating layer 1b and the inner wall of the via hole 8 by a conventionally known semi-additive. It is formed in a predetermined pattern by a method or the like. In the embodiment of the present invention, a plurality of insulating layers 1b having the wiring conductors 2 on the surface and the inner wall of the via hole 8 are formed on the upper and lower surfaces of the core 1a.

【0045】次に、絶縁層1bの一方の最外層表面の電
子部品実装領域に形成された配線導体2の一部をエッチ
ングして、電子部品接合用の半田接合パッド4を形成す
るとともに絶縁層1bの他方の最外層表面に形成された
配線導体2の一部をエッチングして外部接合用の半田接
合パッド4を形成する。半田接合パッド4は、その形状
が略円形状で、厚みが3〜50μm程度であり、また、そ
の直径が電子部品接続用の半田接合パッド4であれば50
〜100μm程度、外部接続用の半田接合パッド4であれ
ば0.4〜1.0mm程度である。
Next, a part of the wiring conductor 2 formed in the electronic component mounting area on one outermost layer surface of the insulating layer 1b is etched to form a solder joint pad 4 for electronic component bonding and to form the insulating layer. A part of the wiring conductor 2 formed on the other outermost layer surface of 1b is etched to form a solder bonding pad 4 for external bonding. The solder bonding pad 4 has a substantially circular shape, a thickness of about 3 to 50 μm, and a diameter of about 50 μm if the solder bonding pad 4 is for connecting electronic components.
About 100 μm, and about 0.4 to 1.0 mm for the solder connection pad 4 for external connection.

【0046】次に、図3(a)に要部拡大断面図で示す
ように、絶縁基体1の表面の半田接合パッド4を含む電
子部品実装領域に耐半田樹脂層3を被着形成する。耐半
田樹脂層3は、その厚みが10〜50μm程度であり、例え
ばアクリル変性エポキシ樹脂等の感光性樹脂と光開始剤
等とから成る混合物に30〜70重量%のシリカやタルク等
の無機粉末フィラーを含有させた混合物を、従来周知の
スクリーン印刷法を採用して絶縁基体1表面の電子部品
実装領域に印刷し、その後、加熱・硬化することにより
形成される。
Next, as shown in an enlarged sectional view of a main portion in FIG. 3A, a solder-resistant resin layer 3 is formed on the surface of the insulating substrate 1 in the electronic component mounting area including the solder bonding pads 4. The solder-resistant resin layer 3 has a thickness of about 10 to 50 μm. For example, 30 to 70% by weight of an inorganic powder such as silica or talc is added to a mixture of a photosensitive resin such as an acrylic-modified epoxy resin and a photoinitiator. The mixture containing the filler is formed by printing on the electronic component mounting area on the surface of the insulating substrate 1 by using a conventionally known screen printing method, and then heating and curing.

【0047】次に、図3(b)に要部拡大断面図で示す
ように、半田接合パッド4の中央部上の耐半田樹脂層3
に貫通孔10を形成する。このような貫通孔10は、8〜11
μmの波長を有するレーザ光を耐半田樹脂層3の半田接
合パッド4の中央部に対応する位置に照射することによ
り形成される。なお、貫通孔10の形成には、例えば8〜
11μmの波長を有する炭酸ガスレーザが用いられる。ま
た、この時のレーザ光のエネルギーは、電子部品接続用
の貫通孔10の穿設では0.5〜2.0mj程度、外部接続用の
貫通孔10の穿設では60〜100mj程度である。
Next, as shown in an enlarged sectional view of a main part in FIG.
A through hole 10 is formed in the substrate. Such through-holes 10 are 8 to 11
It is formed by irradiating a laser beam having a wavelength of μm to a position corresponding to the center of the solder joint pad 4 of the solder resistant resin layer 3. In addition, for forming the through hole 10, for example, 8 to
A carbon dioxide laser having a wavelength of 11 μm is used. The energy of the laser beam at this time is about 0.5 to 2.0 mj when the through hole 10 for connecting electronic components is formed, and is about 60 to 100 mj when the through hole 10 for connecting external parts is formed.

【0048】次に、図3(c)に要部拡大断面図で示す
ように、貫通孔10から露出した半田接合パッド4の中央
部に、波長が0.1〜1μmのレーザ光を照射して略球面
状の凹部11を形成する。なお、略球面状の凹部11の形成
には、例えば0.1〜1μmの波長を有するYAGレーザ
やエキシマレーザ等が用いられる。また、この時のレー
ザ光のエネルギーは、電子部品接続用の貫通孔10の穿設
では0.5〜2.0mj程度、外部接続用の貫通孔10の穿設で
は60〜100mj程度である。
Next, as shown in an enlarged sectional view of a main part in FIG. 3C, a laser beam having a wavelength of 0.1 to 1 μm is applied to the central portion of the solder bonding pad 4 exposed from the through hole 10 to substantially emit the laser beam. A spherical recess 11 is formed. For forming the substantially spherical concave portion 11, for example, a YAG laser or an excimer laser having a wavelength of 0.1 to 1 μm is used. The energy of the laser beam at this time is about 0.5 to 2.0 mj when the through hole 10 for connecting electronic components is formed, and is about 60 to 100 mj when the through hole 10 for connecting external parts is formed.

【0049】本発明の配線基板の製造方法においては、
絶縁基板1上の電子部品実装領域に電子部品5の電極が
半田を介して接合される半田接合パッドを4形成し、そ
の後、電子部品実装領域に半田接合パッド4を覆って耐
半田樹脂層3を被着させ、さらに、半田接合パッド4の
中央部上の耐半田樹脂層3に、波長が8〜11μmのレー
ザ光を照射して貫通孔10を形成し、しかる後、貫通孔10
により露出した半田接合パッド4の中央部に、波長が0.
1〜1μmのレーザ光を照射して略球面状の凹部11を形
成することが重要である。
In the method for manufacturing a wiring board of the present invention,
Solder bonding pads 4 to which the electrodes of the electronic component 5 are bonded via solder are formed in the electronic component mounting area on the insulating substrate 1, and then the solder resistant pad 4 is covered in the electronic component mounting area by covering the solder bonding pads 4. Further, the through hole 10 is formed by irradiating a laser beam having a wavelength of 8 to 11 μm to the solder resistant resin layer 3 on the central portion of the solder bonding pad 4.
The wavelength is set to 0.
It is important to form a substantially spherical concave portion 11 by irradiating a laser beam of 1 to 1 μm.

【0050】本発明の配線基板の製造方法においては、
半田接合パッド4の中央部上の耐半田樹脂層3に、波長
が8〜11μmのレーザ光を照射して貫通孔10を形成し、
しかる後、貫通孔10により露出した半田接合パッド4の
中央部に、波長が0.1〜1μmのレーザ光を照射して略
球面状の凹部11を形成することから、波長が8〜11μm
のレーザ光で絶縁層1bに容易に貫通孔10を形成できる
とともに半田接合パッド4上に耐半田樹脂が残ったとし
ても、その後の波長が0.1〜1μmのレーザ光で半田接
合パッド4に略球面状の凹部11を形成する際に、半田接
合パッド4上の残った耐半田樹脂を完全に除去できるの
で粗化・エッチング工程を省略することができ、耐半田
樹脂層3表面の樹脂を劣化させることのない配線基板の
製造方法とすることができる。そして、その結果、配線
基板上に電子部品5を実装後、配線基板と電子部品5と
をアンダーフィル材13で接着した際、耐半田樹脂層3と
アンダーフィル材13との密着強度が低下することはな
い。
In the method for manufacturing a wiring board according to the present invention,
A through hole 10 is formed by irradiating a laser beam having a wavelength of 8 to 11 μm to the solder resistant resin layer 3 on the central portion of the solder bonding pad 4.
Thereafter, a substantially spherical concave portion 11 is formed by irradiating a laser beam having a wavelength of 0.1 to 1 μm to the central portion of the solder bonding pad 4 exposed through the through hole 10, so that the wavelength is 8 to 11 μm.
Even if the through hole 10 can be easily formed in the insulating layer 1b by the laser beam, and the solder-resistant resin remains on the solder bonding pad 4, the subsequent laser beam having a wavelength of 0.1 to 1 .mu.m forms a substantially spherical surface on the solder bonding pad 4. When the concave portion 11 is formed, the residual solder-resisting resin on the solder bonding pad 4 can be completely removed, so that the roughening and etching steps can be omitted, and the resin on the surface of the solder-resistant resin layer 3 is deteriorated. A method of manufacturing a wiring board without any problem can be achieved. As a result, when the electronic component 5 is mounted on the wiring board and then the electronic component 5 is bonded to the electronic component 5 with the underfill material 13, the adhesion strength between the solder-resistant resin layer 3 and the underfill material 13 decreases. Never.

【0051】なお、レーザ光で貫通孔10を形成する際、
均一なエネルギー分布を有するレーザ光を数回照射して
貫通孔10の縦断面形状を、貫通孔10の半田接合パッド4
側の径10aが開口径10bの50〜95%となるようにするこ
とにより、貫通孔10の直径が90μm程度より小さくなっ
てもスクリーン印刷時に半田ペーストを貫通孔10に容易
にかつ充分に充填することができ、その後、配線基板を
リフロー炉を通すことにより半田ペーストを溶融固化し
て半田バンプ9を形成した場合、半田接合パッド4と半
田バンプ9とを確実に接合でき、電子部品5の実装時に
半田接合パッド4と半田バンプ9とが剥離してしまうこ
とのない電気的接続が良好な配線基板とすることができ
る。
When the through hole 10 is formed by laser light,
By irradiating the laser beam having a uniform energy distribution several times, the vertical sectional shape of the through hole 10 is changed to the solder bonding pad 4 of the through hole 10.
Even if the diameter of the through hole 10 is smaller than about 90 μm, the solder paste can be easily and sufficiently filled into the through hole 10 during screen printing by setting the diameter 10a of the side to be 50 to 95% of the opening diameter 10b. Then, when the solder paste is melted and solidified by passing the wiring board through a reflow furnace to form the solder bumps 9, the solder bonding pads 4 and the solder bumps 9 can be reliably bonded, and the electronic component 5 It is possible to provide a wiring board with good electrical connection without peeling of the solder bonding pad 4 and the solder bump 9 during mounting.

【0052】また、レーザ光で略球面状の凹部11を形成
する際、波長が0.1〜1μmのレーザ光を所定のエネル
ギーで数回照射して、その深さ12を半田接合パッド4の
厚みの1/10〜1/2となるようにすることにより、半
田バンプ9の耐半田樹脂層3の側面に接する面と半田接
合パッド4表面に接する面との角部の形状を曲線状とな
すことができ、半田をその角部に容易に充填することが
でき角部に空隙を生じることがないので、半田バンプ9
と半田接合パッド4との接合面積が増加し、その結果、
半田バンプ9と半田接合パッド4との接合強度が低下す
ることのない配線基板とすることができる。
When forming the substantially spherical concave portion 11 with laser light, a laser beam having a wavelength of 0.1 to 1 μm is irradiated several times with a predetermined energy, and the depth 12 is adjusted to the thickness of the solder bonding pad 4. By making it 1/10 to 1/2, the shape of the corner between the surface of the solder bump 9 in contact with the side surface of the solder-resistant resin layer 3 and the surface in contact with the surface of the solder bonding pad 4 is curved. The solder bumps 9 can be easily filled in the corners and no voids are formed in the corners.
And the soldering pad 4 has a larger bonding area, and as a result,
It is possible to provide a wiring board in which the bonding strength between the solder bumps 9 and the solder bonding pads 4 does not decrease.

【0053】かくして、本発明の配線基板の製造方法に
よれば、半田接合パッド4の中央部上の耐半田樹脂層3
に、波長が8〜11μmのレーザ光を照射して貫通孔10を
形成し、しかる後、貫通孔10により露出した半田接合パ
ッド4の中央部に、波長が0.1〜1μmのレーザ光を照
射して略球面状の凹部11を形成することから、半田接合
パッド4上に耐半田樹脂の残渣を完全に除去できるので
粗化・エッチング工程を省略することができ、耐半田樹
脂層3表面の樹脂が劣化してしまうことがなく、その結
果、アンダーフィル材13と耐半田樹脂層3との接着強度
の低下が生じない配線基板の製造方法とすることができ
る。
Thus, according to the method for manufacturing a wiring board of the present invention, the solder-resistant resin layer 3 on the central portion of the solder joint pad 4 is formed.
Then, a through hole 10 is formed by irradiating a laser beam having a wavelength of 8 to 11 μm, and then a laser beam having a wavelength of 0.1 to 1 μm is radiated to a central portion of the solder bonding pad 4 exposed by the through hole 10. Since the substantially spherical recess 11 is formed, the residue of the solder-resistant resin on the solder bonding pad 4 can be completely removed, so that the roughening and etching steps can be omitted, and the resin on the surface of the solder-resistant resin layer 3 can be eliminated. Is not deteriorated, and as a result, it is possible to provide a method of manufacturing a wiring board in which the adhesive strength between the underfill material 13 and the solder-resistant resin layer 3 does not decrease.

【0054】なお、本発明は、上述の実施の形態の一例
に限定されるものではなく、本発明の要旨を逸脱しない
範囲であれば、変更・改良を施すことは何ら差し支えな
い。
The present invention is not limited to the above-described embodiment, and may be modified or improved without departing from the scope of the present invention.

【0055】[0055]

【発明の効果】本発明の配線基板によれば、耐半田樹脂
層の貫通孔の半田接合パッド側の径を開口径の50〜95%
としたことから、貫通孔の縦断面が、開口径が半田接合
パッド側の径より大きい漏斗形状となり、貫通孔の開口
径が90μm程度より小さくなってもスクリーン印刷時に
半田ペーストを貫通孔に容易にかつ充分に充填すること
ができ、その結果、配線基板をリフロー炉に通して半田
ペーストを溶融固化して半田バンプを形成した場合、半
田接合パッドと半田バンプとを確実に接合でき、電子部
品の実装時に半田接合パッドと半田バンプとが剥離して
しまうことはなく、電気的接続が良好な配線基板とする
ことができる。
According to the wiring board of the present invention, the diameter of the through hole of the solder-resistant resin layer on the side of the solder bonding pad is 50 to 95% of the opening diameter.
As a result, the vertical cross section of the through hole has a funnel shape with an opening diameter larger than the diameter of the solder joint pad side. Even if the opening diameter of the through hole becomes smaller than about 90 μm, solder paste can be easily formed into the through hole during screen printing. When the wiring board is passed through a reflow furnace and the solder paste is melted and solidified to form solder bumps, the solder bonding pads and the solder bumps can be securely bonded, and the electronic component The solder bonding pads and the solder bumps are not separated at the time of mounting, and a wiring board with good electrical connection can be obtained.

【0056】また、本発明の配線基板によれば、耐半田
樹脂層の貫通孔の半田接合パッド側の径を開口径の50〜
95%とするとともに貫通孔から露出した半田接合パッド
の中央部に略球面状の凹部を形成したことから、半田バ
ンプの貫通孔の側面に接する面と半田接合パッド表面に
接する面との角部の形状が曲線状となり、半田をその角
部に容易に浸透させることができその角部に空隙を生じ
ることがないので、半田バンプと半田接合パッドとの接
合面積が増加し、その結果、半田バンプと半田接合パッ
ドとの接合強度が低下することがない。さらに、電子部
品の作動時に生じる熱によって発生する、熱膨張係数の
異なる半田や半田接合パッド・耐半田樹脂層の膨脹・収
縮による応力がその角部に集中してその角部にクラック
を発生させることはなく、電子部品を正常に作動させる
ことができる配線基板とすることができる。
Further, according to the wiring board of the present invention, the diameter of the through hole of the solder-resistant resin layer on the side of the solder joint pad is set to 50 to 50 mm of the opening diameter.
The corner between the surface that contacts the side surface of the through hole of the solder bump and the surface that touches the surface of the solder bonding pad because 95% is set and a substantially spherical concave portion is formed in the center of the solder bonding pad exposed from the through hole. Has a curved shape, the solder can easily penetrate into the corners, and no voids are formed in the corners, so that the bonding area between the solder bumps and the solder bonding pads increases, and as a result, The bonding strength between the bump and the solder bonding pad does not decrease. Furthermore, the stress generated by the heat generated during the operation of the electronic component due to the expansion and contraction of the solder and the solder joint pad / solder-resistant resin layer having different coefficients of thermal expansion concentrates on the corners, causing cracks at the corners. Thus, a wiring board that can normally operate the electronic component can be provided.

【0057】本発明の配線基板の製造方法によれば、半
田接合パッドの中央部上の耐半田樹脂層に、波長が8〜
11μmのレーザ光を照射して貫通孔を形成した後に、貫
通孔により露出した半田接合パッドの中央部に、波長が
0.1〜1μmのレーザ光を照射して略球面状の凹部を形
成することから、波長が8〜11μmのレーザ光で耐半田
樹脂層に貫通孔を容易に形成でき、また、半田接合パッ
ド上に耐半田樹脂が残ったとしても、波長が0.1〜1μ
mのレーザ光で半田接合パッド上の残った耐半田樹脂を
完全に除去できるので、粗化・エッチング工程が省略で
きるとともに耐半田樹脂層表面の樹脂を劣化してしまう
ことがない。
According to the method for manufacturing a wiring board of the present invention, the wavelength of 8 to 8 is applied to the solder-resistant resin layer on the central portion of the solder joint pad.
After irradiating a laser beam of 11 μm to form a through hole, the wavelength is applied to the center of the solder joint pad exposed by the through hole.
Since a substantially spherical concave portion is formed by irradiating a laser beam of 0.1 to 1 μm, a through hole can be easily formed in the solder-resistant resin layer with a laser beam having a wavelength of 8 to 11 μm. Even if solder-resistant resin remains, the wavelength is 0.1-1μ
Since the residual solder-resisting resin on the solder bonding pad can be completely removed by the laser beam of m, the roughening / etching step can be omitted and the resin on the surface of the solder-resisting resin layer does not deteriorate.

【0058】本発明の電子装置によれば、上記の配線基
板の電子部品実装領域に電子部品を実装し、半田接合パ
ッドと電子部品の電極とを半田を介して接続したことか
ら、電子部品が動作時に発する熱による応力が長期間に
わたり半田の貫通孔の側面に接する面と半田接合パッド
表面に接する面との角部に繰返し印加されるてもその角
部に応力が集中することはなく、角部にクラックが発生
することを防止でき、その結果、電子部品を正常に作動
させることができる電子装置とすることができる。
According to the electronic device of the present invention, the electronic component is mounted on the electronic component mounting area of the wiring board, and the solder bonding pad and the electrode of the electronic component are connected via the solder. Even if the stress due to the heat generated during operation is repeatedly applied to the corners of the surface in contact with the side surface of the through hole of the solder and the surface in contact with the surface of the solder bonding pad for a long time, the stress does not concentrate on the corner, A crack can be prevented from being generated at the corner, and as a result, an electronic device that can normally operate the electronic component can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明の配線基板およびこれに電子部品
を搭載して電子装置に適用した場合の実施の形態の一例
を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment in which an electronic component is mounted on a wiring board of the present invention and applied to an electronic device.

【図2】図2は本発明の配線基板および電子装置の実施
の形態の一例の要部拡大断面図である。
FIG. 2 is an enlarged sectional view of a main part of an example of an embodiment of a wiring board and an electronic device of the present invention.

【図3】(a)および(b)、(c)はそれぞれ本発明
の配線基板の製造方法を説明するための要部拡大断面図
である。
FIGS. 3A, 3B, and 3C are enlarged cross-sectional views of a main part for describing a method of manufacturing a wiring board according to the present invention;

【符号の説明】[Explanation of symbols]

1・・・・・・絶縁基板 1a・・・・・芯体 1b・・・・・絶縁層 2・・・・・・配線導体 3・・・・・・耐半田樹脂層 4・・・・・・半田接合パッド 5・・・・・・電子部品 10・・・・・・貫通孔 10a・・・・・貫通孔の半田接合パッド側の径 10b・・・・・貫通孔の開口径 11・・・・・・凹部 12・・・・・・凹部の深さ DESCRIPTION OF SYMBOLS 1 ... Insulating board 1a ... Core body 1b ... Insulating layer 2 ... Wiring conductor 3 ... Solder-resistant resin layer 4 ... ..Solder joint pad 5 ... Electronic component 10 ... Through hole 10a ... Diameter of through hole on solder joint pad side 10b ...・ ・ ・ ・ ・ ・ Recess 12 ・ ・ ・ ・ ・ ・ Depth of recess

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/28 H05K 3/46 Q 3/46 H01L 23/12 N Fターム(参考) 5E314 AA25 AA27 BB02 BB10 BB11 BB12 CC15 FF01 GG26 5E319 AA03 AA07 AB05 AC01 AC11 AC12 AC13 BB05 CC33 CD29 GG03 5E346 AA12 AA15 AA17 BB01 BB15 BB16 CC02 CC08 CC31 CC40 DD02 DD31 FF45 GG15 HH21 HH33 5F044 KK02 KK17 KK25 LL01 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H05K 3/28 H05K 3/46 Q 3/46 H01L 23/12 NF term (Reference) 5E314 AA25 AA27 BB02 BB10 BB11 BB12 CC15 FF01 GG26 5E319 AA03 AA07 AB05 AC01 AC11 AC12 AC13 BB05 CC33 CD29 GG03 5E346 AA12 AA15 AA17 BB01 BB15 BB16 CC02 CC08 CC31 CC40 DD02 DD31 FF45 GG15 HH21 HH33 5F044 KK02 KK17 KK25 LL01

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板上の電子部品実装領域に電子部
品の電極が半田を介して接合される半田接合パッドを設
け、前記電子部品実装領域に前記半田接合パッドの外周
部を覆うとともに前記半田接合パッドの中央部を露出さ
せる貫通孔を有する耐半田樹脂層を被着させて成る配線
基板であって、前記貫通孔は、その前記半田接合パッド
側の径が開口径の50〜95%であり、前記半田接合パ
ッドは、その中央部に略球面状の凹部を有することを特
徴とする配線基板。
An electronic component mounting region on an insulating substrate is provided with a solder bonding pad to which an electrode of an electronic component is bonded via solder, and the electronic component mounting region covers an outer peripheral portion of the solder bonding pad and the solder bonding pad. A wiring board comprising a solder-resistant resin layer having a through hole exposing a central portion of a bonding pad, wherein the through hole has a diameter on the solder bonding pad side of 50 to 95% of an opening diameter. The wiring board, wherein the solder bonding pad has a substantially spherical concave portion at a central portion thereof.
【請求項2】 前記凹部の深さが前記半田接合パッドの
厚みの1/10〜1/2であることを特徴とする請求項
1記載の配線基板。
2. The wiring board according to claim 1, wherein the depth of the recess is 1/10 to 1/2 of the thickness of the solder bonding pad.
【請求項3】 絶縁基板上の電子部品実装領域に電子部
品の電極が半田を介して接合される半田接合パッドを形
成する工程と、前記電子部品実装領域に前記半田接合パ
ッドを覆って耐半田樹脂層を被着させる工程と、前記半
田接合パッドの中央部上の前記耐半田樹脂層に、波長が
8〜11μmのレーザ光を照射して貫通孔を形成する工
程と、貫通孔により露出した前記半田接合パッドの中央
部に、波長が0.1〜1μmのレーザ光を照射して略球
面状の凹部を形成する工程とを順次行なうことを特徴と
する配線基板の製造方法。
3. A step of forming a solder joint pad to which an electrode of an electronic component is joined via solder in an electronic component mounting area on an insulating substrate; A step of applying a resin layer, a step of irradiating a laser beam having a wavelength of 8 to 11 μm to the solder-resistant resin layer on the central portion of the solder bonding pad to form a through hole, and a step of exposing through the through hole. Forming a substantially spherical concave portion by irradiating a laser beam having a wavelength of 0.1 to 1 μm to a central portion of the solder bonding pad.
【請求項4】 請求項1または請求項2記載の配線基板
の電子部品実装領域に電子部品を実装し、前記半田接合
パッドと前記電子部品の電極とを半田を介して接続した
ことを特徴とする電子装置。
4. An electronic component is mounted on an electronic component mounting region of the wiring board according to claim 1, and the solder bonding pad and an electrode of the electronic component are connected via solder. Electronic devices.
JP2001089752A 2001-03-27 2001-03-27 Wiring board, its manufacturing method, and electronic device Pending JP2002290022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001089752A JP2002290022A (en) 2001-03-27 2001-03-27 Wiring board, its manufacturing method, and electronic device

Publications (1)

Publication Number Publication Date
JP2002290022A true JP2002290022A (en) 2002-10-04

Family

ID=18944635

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Country Link
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