JPH0748535B2 - Method for manufacturing graded ceramic substrate - Google Patents

Method for manufacturing graded ceramic substrate

Info

Publication number
JPH0748535B2
JPH0748535B2 JP16205487A JP16205487A JPH0748535B2 JP H0748535 B2 JPH0748535 B2 JP H0748535B2 JP 16205487 A JP16205487 A JP 16205487A JP 16205487 A JP16205487 A JP 16205487A JP H0748535 B2 JPH0748535 B2 JP H0748535B2
Authority
JP
Japan
Prior art keywords
glaze
substrate
ceramic substrate
ceramics
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16205487A
Other languages
Japanese (ja)
Other versions
JPS647544A (en
Inventor
豊 ▲巽▼
Original Assignee
ロ−ム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロ−ム株式会社 filed Critical ロ−ム株式会社
Priority to JP16205487A priority Critical patent/JPH0748535B2/en
Publication of JPS647544A publication Critical patent/JPS647544A/en
Publication of JPH0748535B2 publication Critical patent/JPH0748535B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 (a)産業上の利用分野 この発明は、セラミクス基板の表面にグレーズを施した
グレーズドセラミクス基板の製造方法に関する。
Description: (a) Field of Industrial Application The present invention relates to a method for manufacturing a glazed ceramic substrate in which the surface of a ceramic substrate is glazed.

(b)従来の技術 従来、絶縁セラミクス材料は、絶縁性などの電気的特性
や耐熱性などの物理的特性を活かして電子部品の基板な
どに多く用いられている。一般にセラミクス基板の表面
に金属などの導体配線パターンを形成する際、セラミク
ス基板表面の凹凸による影響を無くすため、配線パター
ンの下地としてグレーズを施したグレーズドセラミクス
基板が用いられている。従来、グレーズドセラミクス基
板を製造する方法として、次のような方法が採用されて
いる。
(B) Conventional Technology Conventionally, insulating ceramics materials have been widely used for substrates of electronic parts and the like by taking advantage of electrical characteristics such as insulation and physical characteristics such as heat resistance. Generally, when forming a conductor wiring pattern of metal or the like on the surface of a ceramics substrate, in order to eliminate the influence of irregularities on the surface of the ceramics substrate, a glaze ceramics substrate subjected to glaze is used as a base of the wiring pattern. Conventionally, the following method has been adopted as a method for manufacturing a glaze ceramics substrate.

先ず、セラミクス粉にバインダを混合してグリーンシー
トを成形するか、セラミクス粉を板状に成形した後、こ
れを約1400℃で焼成することによってセラミクス基板を
形成する。このセラミクス基板の表面に、ガラスフリッ
ト2と有機樹脂を混合してシート状に成形したグレーズ
テープを貼付するか、またはグレーズ槽にディッピング
するかもしくはガラスペーストをスクリーン印刷するこ
とによってセラミクス基板表面にグレーズ膜を被覆す
る。その後、約1200〜1300℃に加熱することによって、
セラミクス基板表面にグレーズを焼成している。
First, the ceramic powder is mixed with a binder to form a green sheet, or the ceramic powder is formed into a plate shape and then baked at about 1400 ° C. to form a ceramic substrate. A glaze tape formed by mixing the glass frit 2 and an organic resin into a sheet is attached to the surface of the ceramic substrate, or the glass substrate is dipped in a glaze tank or screen-printed with a glass paste to form a glaze on the surface of the ceramic substrate. Coat the membrane. Then, by heating to about 1200-1300 ℃,
Glaze is baked on the surface of the ceramic substrate.

(c)発明が解決しようとする問題点 このような従来の方法によって製造されたセラミクス基
板は基板の平面部から端面部にかけて連続的な配線パタ
ーンを形成する場合問題となることがあった。従来の製
造方法により製造されたグレーズドセラミクス基板の断
面形状を第3図と第4図に示す。第3図は厚さが3mm、
端面部が1Rのセラミクス基板1の表面にグレーズ膜2を
形成した後、直立状態で焼成した例であり、図中矢印A
で示す箇所にグレーズ膜2の薄い部分、あるいはグレー
ズ膜が形成されず下地のセラミクス表面が露出している
部分が生じる。これはグレーズ膜が完全に焼成される前
に、その表面張力の作用によってセラミクス基板1の平
面部と端面部の境界部分でグレーズ膜が薄くなり、その
まま焼成されるか、あるいは切れ目が生じるためであ
る。第4図はセラミクス基板1の表面に同様にしてグレ
ーズ膜を形成した後、水平状態で焼成した例であり、グ
レーズ膜の表面張力と重力との作用により、矢印Bで示
す箇所にグレーズ膜の薄い部分あるいは切れ目が生じ
る。
(C) Problems to be Solved by the Invention The ceramic substrate manufactured by such a conventional method may cause a problem when a continuous wiring pattern is formed from the flat surface portion to the end surface portion of the substrate. The cross-sectional shape of the glaze ceramics substrate manufactured by the conventional manufacturing method is shown in FIGS. 3 and 4. Figure 3 shows a thickness of 3mm,
This is an example in which the glaze film 2 is formed on the surface of the ceramic substrate 1 having an end face of 1R and then fired in an upright state.
A thin portion of the glaze film 2 or a portion in which the glaze film is not formed and the surface of the underlying ceramics is exposed occurs at the portion indicated by. This is because, before the glaze film is completely baked, the glaze film becomes thin at the boundary portion between the flat surface portion and the end surface portion of the ceramics substrate 1 due to the effect of the surface tension, and the glaze film is baked as it is, or a break occurs. is there. FIG. 4 shows an example in which a glaze film was similarly formed on the surface of the ceramics substrate 1 and then fired in a horizontal state. Due to the action of the surface tension of the glaze film and gravity, the glaze film is formed at a position indicated by an arrow B. Thin areas or cuts occur.

グレーズ膜に切れ目が生じると、配線パターンを形成す
べき表面の平滑度が大きく変化し、配線パターンの形成
が困難となる。すなわち、例えば配線パターンをフォト
リソグラフィにより形成する際、切れ目部分にフォトレ
ジストが残留し、パターンの解像ができず、その部分で
パターン間がショートすることになる。
When a break occurs in the glaze film, the smoothness of the surface on which the wiring pattern is to be formed changes significantly, making it difficult to form the wiring pattern. That is, for example, when a wiring pattern is formed by photolithography, the photoresist remains at the cut portion, the pattern cannot be resolved, and the pattern is short-circuited at that portion.

この発明の目的は、セラミクス基板の端面付近において
もグレーズ膜を均一に形成できるようにし、セラミクス
基板の平面部から端面部にかけて配線パターンを容易に
形成できるようにしたグレーズドセラミクス基板の製造
方法を提供することにある。
An object of the present invention is to provide a method for manufacturing a glazed ceramics substrate, which enables a glaze film to be formed uniformly even near the end face of the ceramics substrate and a wiring pattern to be easily formed from the flat surface portion to the end surface portion of the ceramics substrate. To do.

(d)問題点を解決するための手段 この発明のグレーズドセラミクス基板の製造方法は、セ
ラミクス粉にバインダを混合してシート状に成形した後
またはセラミクス粉を板状に成形した後低温で仮焼成し
て素焼き状のセラミクス基板を形成する工程と、この基
板の平面および端面にグレーズ膜を被覆する工程と、基
板全体を仮焼成時より高い温度で本焼成して基板の焼き
シメおよびグレーズの焼成を行う工程とからなる。
(D) Means for Solving Problems The method for manufacturing a glaze ceramics substrate according to the present invention is a method in which a binder is mixed with ceramic powder to form a sheet, or the ceramic powder is formed into a plate and then calcined at a low temperature. To form a unglazed ceramics substrate, a step of coating the flat and end faces of this substrate with a glaze film, and a main baking of the entire substrate at a temperature higher than that at the time of pre-baking to bake the board and bake glazes. And the step of performing.

(e)作用 この発明のグレーズドセラミクス基板の製造方法におい
ては、先ずセラミクス粉にバインダを混合してシート状
に成形した後、またはセラミクス粉を板状に成形した
後、仮焼成して素焼き状のセラミクス基板が形成され
る。素焼き状のセラミクスは結晶粒子が成長しておらず
気孔が多いためグレーズの濡れ性が良好であり、グレー
ズの表面張力の作用が低減される。このため、セラミク
ス基板にグレーズ膜を被覆した際、セラミクス基板の平
面部から端面部にかけて均一なグレーズ膜が形成され
る。その後、基板全体を仮焼成時より高い温度で本焼成
することによって、セラミクス基板の焼きシメとグレー
ズの焼成が行われる。これにより、セラミクス基板の内
部から表面にかけてセラミクスからグレーズへ組成が連
続的に変化する構造となる。
(E) Action In the method for producing a glaze ceramics substrate of the present invention, first, the binder is mixed with the ceramic powder to form a sheet, or the ceramic powder is formed into a plate, and then calcined to form a biscuit-like form. A ceramic substrate is formed. In the unglazed ceramics, crystal grains do not grow and there are many pores, so the wettability of the glaze is good, and the effect of the surface tension of the glaze is reduced. Therefore, when the ceramic substrate is coated with the glaze film, a uniform glaze film is formed from the flat surface portion to the end surface portion of the ceramic substrate. After that, the entire substrate is main-baked at a temperature higher than that at the time of pre-baking, so that the ceramic substrate is baked and the glaze is baked. This results in a structure in which the composition continuously changes from the ceramics to the glaze from the inside to the surface of the ceramics substrate.

(f)実施例 第1図はこの発明の実施例であるグレーズドセラミクス
基板の製造方法により製造した基板の断面形状を表して
いる。図において1はたとえば厚さが3mm端面部が1Rの
アルミナなどのセラミクス基板であり、その表面(平面
および端面)にグレーズ2が均一な膜厚で形成されてい
る。このようなグレーズドセラミクス基板を製造する方
法は次の通りである。
(F) Example FIG. 1 shows a cross-sectional shape of a substrate manufactured by the method for manufacturing a glaze ceramics substrate which is an example of the present invention. In the figure, reference numeral 1 is a ceramics substrate such as alumina having a thickness of 3 mm and an end face portion of 1R, and a glaze 2 having a uniform film thickness is formed on the surface (plane and end face). The method of manufacturing such a glaze ceramic substrate is as follows.

セラミクス粉にバインダを混合してシート状に成形
した後、またはセラミクス粉を板状に成形した後、約80
0〜900℃の比較的低い温度で仮焼成する。これにより素
焼き状のセラミクス基板が形成される。
After mixing the ceramic powder with a binder and forming it into a sheet, or after forming the ceramic powder into a plate, about 80
Pre-baking is performed at a relatively low temperature of 0 to 900 ° C. As a result, a bisque-fired ceramic substrate is formed.

基板の表面に、ガラスフリットを有機樹脂によって
混練して乾燥したグレーズテープを貼付するか、基板全
体をグレーズ槽にディッピングすることによりグレーズ
膜を被覆する。
On the surface of the substrate, a glass frit is kneaded with an organic resin and dried and a glaze tape is attached, or the entire substrate is dipped in a glaze bath to cover the glaze film.

基板全体を約1400℃に加熱して本焼成を行う。グレ
ーズの焼成温度は約1200〜1300℃であるので、基板の焼
きシメとグレーズの焼成が同時に行われる。
The entire substrate is heated to about 1400 ° C for main firing. Since the glaze firing temperature is about 1200 to 1300 ° C., the firing of the substrate and the firing of the glaze are performed simultaneously.

このようにして形成したグレーズドセラミクス基板をサ
ーマルプリンタなどに使用される端面型サーマルヘッド
に適用した例を第2図に示す。図において10はグレーズ
ドセラミクス基板であり、その端面部分に複数の発熱部
11とこの発熱部11に対して駆動電流を供給するためのコ
モンリード12と個別リード13の配線パターンを形成して
いる。このようにセラミクス基板の平面から端面にかけ
て多数の配線パターンをファインピッチでパターン化す
ることが可能となる。
An example in which the glaze ceramics substrate formed in this way is applied to an end face type thermal head used in a thermal printer or the like is shown in FIG. In the figure, 10 is a glaze ceramics substrate, and a plurality of heat generating parts are provided on the end face part thereof.
Wiring patterns of a common lead 12 and an individual lead 13 for supplying a driving current to the heat generating portion 11 are formed. In this way, it becomes possible to form a large number of wiring patterns with a fine pitch from the plane surface to the end surface of the ceramics substrate.

(g)発明の効果 以上のようにこの発明によれば、セラミクス基板の外表
面全体にグレーズを形成する場合でも、基板の平面部と
端面部の境界部分にグレーズ膜の薄い部分あるいは切れ
目が生じることがなく、基板の平面部から端面部にかけ
て連続する配線パターンを容易に形成することができ
る。
(G) Effects of the Invention As described above, according to the present invention, even when the glaze is formed on the entire outer surface of the ceramic substrate, a thin portion or a break of the glaze film is generated at the boundary portion between the flat portion and the end face portion of the substrate. It is possible to easily form a continuous wiring pattern from the flat surface portion to the end surface portion of the substrate.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの発明の実施例であるグレーズドセラミクス
基板の製造方法により製造した基板の形状を表す部分断
面図、第2図は同グレーズドセラミクス基板を用いた端
面型サーマルヘッドの構造を表す部分斜視図、第3図と
第4図は従来の方法により製造されたグレーズドセラミ
クス基板の構造を表す部分断面図である。 1…セラミクス基板、2…グレーズ。
FIG. 1 is a partial cross-sectional view showing the shape of a substrate manufactured by the method for manufacturing a glaze ceramics substrate according to an embodiment of the present invention, and FIG. 2 is a partial perspective view showing the structure of an end face type thermal head using the same glaze ceramics substrate. FIG. 3, FIG. 3 and FIG. 4 are partial cross-sectional views showing the structure of a glaze ceramics substrate manufactured by a conventional method. 1 ... Ceramic substrate, 2 ... Glaze.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】セラミクス粉にバインダを混合してシート
状に成形した後、またはセラミクス粉を板状に成形した
後、低温で仮焼成して素焼き状のセラミクス基板を形成
する工程と、 この基板の平面および端面にグレーズ膜を被覆する工程
と、 基板全体を仮焼成時より高い温度で本焼成して基板の焼
きシメおよびグレーズの焼成を行う工程と、 からなるグレーズドセラミクス基板の製造方法。
1. A step of mixing a ceramic powder with a binder to form a sheet, or forming the ceramic powder into a plate, and then calcining the mixture at a low temperature to form a biscuit-like ceramic substrate, and the substrate. And a step of coating the glaze film on the flat surface and the end surface of the same, and a step of performing main baking of the entire substrate at a temperature higher than that at the time of pre-baking to perform baking of the substrate and baking of the glaze, the method for manufacturing a glazed ceramic substrate.
JP16205487A 1987-06-29 1987-06-29 Method for manufacturing graded ceramic substrate Expired - Lifetime JPH0748535B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16205487A JPH0748535B2 (en) 1987-06-29 1987-06-29 Method for manufacturing graded ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16205487A JPH0748535B2 (en) 1987-06-29 1987-06-29 Method for manufacturing graded ceramic substrate

Publications (2)

Publication Number Publication Date
JPS647544A JPS647544A (en) 1989-01-11
JPH0748535B2 true JPH0748535B2 (en) 1995-05-24

Family

ID=15747220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16205487A Expired - Lifetime JPH0748535B2 (en) 1987-06-29 1987-06-29 Method for manufacturing graded ceramic substrate

Country Status (1)

Country Link
JP (1) JPH0748535B2 (en)

Also Published As

Publication number Publication date
JPS647544A (en) 1989-01-11

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