JPH0746707B2 - Semiconductor mounting substrate and manufacturing method thereof - Google Patents

Semiconductor mounting substrate and manufacturing method thereof

Info

Publication number
JPH0746707B2
JPH0746707B2 JP61154435A JP15443586A JPH0746707B2 JP H0746707 B2 JPH0746707 B2 JP H0746707B2 JP 61154435 A JP61154435 A JP 61154435A JP 15443586 A JP15443586 A JP 15443586A JP H0746707 B2 JPH0746707 B2 JP H0746707B2
Authority
JP
Japan
Prior art keywords
semiconductor mounting
substrate
recess
forming
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61154435A
Other languages
Japanese (ja)
Other versions
JPS639956A (en
Inventor
義徳 高崎
勝美 馬渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP61154435A priority Critical patent/JPH0746707B2/en
Publication of JPS639956A publication Critical patent/JPS639956A/en
Publication of JPH0746707B2 publication Critical patent/JPH0746707B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、各種の半導体素子を搭載するために使用され
る半導体搭載用基板およびその製造方法に関する。
Description: TECHNICAL FIELD The present invention relates to a semiconductor mounting substrate used for mounting various semiconductor elements and a method for manufacturing the same.

特に本発明は、搭載された半導体素子から発生する熱の
放散性に優れた半導体用基板とその製造方法を提供する
ものであり、カメラ、時計などの内装基板をはじめ、チ
ップキャリアー、ピングリッドアレイ、ハイブリッド基
板などに有利に使用される。
In particular, the present invention provides a semiconductor substrate excellent in heat dissipation from a mounted semiconductor element and a method for manufacturing the same, including an internal substrate for cameras, watches, chip carriers, pin grid arrays. , Advantageously used for hybrid substrates.

〔従来の技術〕[Conventional technology]

従来の半導体素子を直接搭載する半導体搭載用基板の材
質はプラスチックスまたはセラミックスであり、加工し
易く、コストが比較的安いためプラスチックスが最も広
く使用されている。一般にガラスエポキシなどのプラス
チックスを使用した半導体搭載用基板は寸法精度に優
れ、機械強度もアルミナなどのセラミック基板より優れ
ているが、熱伝導率はアルミナの約1/60程度と極めて小
さい。このため従来のプラスチック基板は、集積度の高
いICや消費電力の大きい半導体素子が搭載される基板と
しては未だ十分に満足されていなかった。
The material of the conventional semiconductor mounting substrate on which a semiconductor element is directly mounted is plastics or ceramics, and plastics are most widely used because they are easy to process and relatively low in cost. In general, semiconductor mounting substrates using plastics such as glass epoxy have excellent dimensional accuracy and mechanical strength superior to ceramic substrates such as alumina, but their thermal conductivity is about 1/60 that of alumina, which is extremely small. For this reason, the conventional plastic substrate has not yet been sufficiently satisfied as a substrate on which an IC with a high degree of integration and a semiconductor element with high power consumption are mounted.

この欠点を除去改善するために熱伝導率の高い金属板を
プラスチック基板に装着し、半導体素子を前記金属板に
直接取り付けて熱放散性を向上させた構造からなる半導
体搭載用基板が従来から使用されている。
In order to eliminate and improve this defect, a semiconductor mounting substrate having a structure in which a metal plate having high thermal conductivity is attached to a plastic substrate and a semiconductor element is directly attached to the metal plate to improve heat dissipation has been conventionally used. Has been done.

第7図および第8図に従来技術による半導体搭載用基板
の縦断面図を示した。
FIG. 7 and FIG. 8 show vertical sectional views of a semiconductor mounting substrate according to the prior art.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかし、前述の半導体搭載用基板において、第7図に示
したような基板裏面側の開口部周辺に金属板を接着層を
介して接合された基板にあっては、半導体搭載用凹部を
形成する前記開口部の底面周辺において基板と金属板と
を接合するのに用いられる接着材のはみ出しを完全にな
くすことは非常に困難であり、搭載する半導体素子の外
寸に比べ、半導体搭載部の内寸を予め大きく設計せねば
ならず装置が大型化する、またはさらに接着材のはみ出
し量が大きくなると半導体素子を正規の位置に載置する
ことができなくなることがあった。また第8図に示した
ような基板裏面に金属板が接合された後、前記基板表面
から前記金属板に到達するよう開口部を開削し接着材の
はみ出し部分を除去した基板にあっては、開削された金
属板状の表面を完全に平滑に加工することは困難であ
り、安定した品質が得られずコストアップにつながる、
もしくは半導体素子を正規の位置、形状に搭載すること
ができない場合があるといった欠点を有していた。
However, in the above-described semiconductor mounting substrate, in the case where a metal plate is bonded to the periphery of the opening on the back surface side of the substrate through an adhesive layer as shown in FIG. 7, the semiconductor mounting recess is formed. It is very difficult to completely eliminate the protrusion of the adhesive used to bond the substrate and the metal plate around the bottom surface of the opening, and it is very difficult to remove the adhesive from the outside of the semiconductor mounting part as compared with the outer size of the semiconductor element to be mounted. If the size of the device must be increased in advance and the size of the device becomes large, or if the amount of protrusion of the adhesive material becomes large, it may not be possible to place the semiconductor element at a proper position. Further, in the substrate as shown in FIG. 8, after the metal plate is joined to the back surface of the substrate, the opening is cut and the protruding portion of the adhesive is removed so as to reach the metal plate from the front surface of the substrate, It is difficult to process the surface of the excavated metal plate in a completely smooth manner, and stable quality cannot be obtained, leading to cost increase.
Alternatively, there is a defect that the semiconductor element may not be mounted in a regular position or shape.

本発明は上記従来技術の有する欠点を改善した、熱放散
性に優れ信頼性が高く高密度配線の形成、装置の小型化
が容易な半導体搭載用基板およびその製造方法を提供す
ることを目的とするものである。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor mounting substrate which is excellent in heat dissipation and has high reliability, high reliability, high density wiring formation, and easy miniaturization of a device, and a method for manufacturing the same, in which the drawbacks of the above-mentioned conventional techniques are improved. To do.

〔問題点を解決するための手段とその作用〕[Means to solve the problem and its action]

以下、本発明を図面に従って詳細に説明する。第1図〜
第2図は本発明による半導体搭載用基板の縦断面図であ
る。第1図においてガラス−エポキシ樹脂、ガラス−変
性トリアジン樹脂、ガラス−ポリイミド樹脂などのプラ
スチック材料からなる上表面に金属箔(2)が貼付され
た基板(1)に表面から裏面まで貫通する開口部(3)
が形成され、前記開口部(3)の基板裏面側に前記開口
部を閉塞するように金属板(4)が接着層(5)を介し
て接合されることにより半導体搭載用凹部(6)が形成
されており、前記半導体搭載用凹部(6)の底面全周に
わたって、当該半導体搭載用凹部(6)の側面と連続す
る外周部を有する溝(7)が形成されている。
Hereinafter, the present invention will be described in detail with reference to the drawings. Fig. 1 ~
FIG. 2 is a vertical sectional view of a semiconductor mounting substrate according to the present invention. In FIG. 1, an opening penetrating from the front surface to the back surface of a substrate (1) having an upper surface made of a plastic material such as glass-epoxy resin, glass-modified triazine resin, or glass-polyimide resin and having a metal foil (2) attached thereto. (3)
Is formed, and the metal plate (4) is bonded to the substrate rear surface side of the opening (3) via the adhesive layer (5) so as to close the opening, whereby the semiconductor mounting recess (6) is formed. A groove (7) having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess (6) is formed over the entire circumference of the bottom surface of the semiconductor mounting recess (6).

ところで、前記基板(1)と前記金属板(7)を接合す
る際には接着材がはみ出すことがあるが、この接着材の
はみ出しを防ぐためには、接着材を前記開口部(3)の
側壁面より内側に後退させるといった方法がある。しか
しその方法では基板(1)と金属板(4)との接合面積
が減少するので、接着力が不足したり、搭載された半導
体素子を保護するために用いられる封止用樹脂の、接着
材を後退させた部分への回り込みが悪く、ボイドが発生
しやすいといった欠点があるため、前記問題点を解決す
る最良の手段とはならない。
By the way, when the substrate (1) and the metal plate (7) are joined, the adhesive may protrude. In order to prevent the adhesive from protruding, the adhesive is attached to the opening (3) side. There is a method of retreating inward from the wall. However, since the bonding area between the substrate (1) and the metal plate (4) is reduced in that method, the adhesive force is insufficient, and an adhesive material for the sealing resin used for protecting the mounted semiconductor element is used. Since it has a drawback in that it does not easily go around to the retracted portion and a void is likely to occur, it is not the best means for solving the above-mentioned problems.

よって、本発明では前記半導体搭載用凹部(6)の底面
全周にわたって、当該半導体搭載用凹部(6)の側面と
連続する外周部を有する溝(7)を形成すると同時に前
記接着材のはみ出し部分(10)を切削することにより前
記半導体搭載用凹部側壁を形成する基板(1)から金属
板(4)に至るまでの面を平滑にし、接着材のはみだし
部分をなくすることを可能にした。ここで前記切削加工
において、加工精度の点で金属板(4)の一部を同時に
切削した方が安易である。
Therefore, in the present invention, a groove (7) having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess (6) is formed over the entire circumference of the bottom surface of the semiconductor mounting recess (6), and at the same time, the protruding portion of the adhesive material is formed. By cutting (10), the surface from the substrate (1) forming the semiconductor mounting recess side wall to the metal plate (4) was made smooth, and it was possible to eliminate the protruding portion of the adhesive. Here, in the cutting process, it is easier to cut a part of the metal plate (4) at the same time in terms of processing accuracy.

第2図は本発明の半導体搭載用基板の他の実施太陽の構
造の縦断面図を示しており第1図と異って基板(1)の
裏面側に形成された凹所(9)に接着層(5)を介して
金属板(4)が接合されている。第2図における半導体
搭載用基板にあっても、半導体搭載用凹部側壁面は、第
1図の本発明による基板と同様に接着剤基板(1)から
金属板(4)に至るまでの平滑なる面が形成されるとと
もに、半導体搭載用凹部底面の切削加工を前記底面周囲
に限定することが可能であるため半導体素子を直接固定
する底面部分の金属板(4)の表面は材料とする金属平
板の表面形状をそのまま露出させ、平滑な面を容易に形
成することができる。第2図の半導体搭載用基板は第1
図に示すものに比較して基板全体を薄くすることが可能
である。
FIG. 2 shows a vertical cross-sectional view of the structure of a sun for another implementation of the semiconductor mounting substrate according to the present invention. Unlike FIG. 1, it has a recess (9) formed on the back surface side of the substrate (1). The metal plate (4) is joined via the adhesive layer (5). Even in the semiconductor mounting substrate shown in FIG. 2, the semiconductor mounting recess side wall surface is smooth from the adhesive substrate (1) to the metal plate (4) as in the substrate according to the present invention shown in FIG. Since the surface is formed and the machining of the bottom surface of the semiconductor mounting recess can be limited to the periphery of the bottom surface, the surface of the metal plate (4) at the bottom part for directly fixing the semiconductor element is a metal flat plate made of a material. The surface shape can be exposed as it is, and a smooth surface can be easily formed. The semiconductor mounting substrate in FIG. 2 is the first
It is possible to make the entire substrate thinner than that shown in the figure.

なお本発明の基板に用いられる接着材はエポキシ樹脂、
ポリイミド樹脂、アクリル樹脂、トリアジン樹脂あるい
はそれらの変性樹脂でありこれらの樹脂は接着性、耐熱
性、耐久性および電気絶縁性の面で優れているので有利
に使用される。また金属板としては銅、アルミニウム、
鉄あるいはそれぞれの合金、さらには前記金属板にニッ
ケル、金などのメッキを施したものなど比較的熱伝導率
の大きいものを有効に利用することができる。
The adhesive used for the substrate of the present invention is an epoxy resin,
It is a polyimide resin, an acrylic resin, a triazine resin or a modified resin thereof, and these resins are advantageously used because they are excellent in adhesiveness, heat resistance, durability and electric insulation. As the metal plate, copper, aluminum,
It is possible to effectively use iron or alloys thereof, and further, those having relatively high thermal conductivity such as those obtained by plating the metal plate with nickel, gold or the like.

次に、本発明の半導体搭載用基板の製造方法を図面に従
って説明する。
Next, a method for manufacturing a semiconductor mounting substrate of the present invention will be described with reference to the drawings.

第3図(a)〜(d)は本発明の半導体搭載用基板の縦
断面図を製造工程順に示す図である。同図(a)に示す
ように、金属箔が上表面もしくは上下表面に貼着された
基板(1)に導体回路(8)を形成する。次に同図
(b)に示すように前記基板(1)を貫通する開口部
(3)を切削あるいは打抜きにより形成する。次に同図
(c)に示すように前記開口部の基板裏面側に前記開口
部(3)を閉塞するように金属板(4)を前記基板
(1)と接着層(5)を介して接合して、半導体搭載用
凹部(6)を形成する。次に同図(d)に示すように開
口部(3)の側壁、接着層(5)及び金属板(4)の表
面を同時に切削加工して、前記接着層(5)のはみ出し
部分を切削すると共に前記半導体搭載用凹部(6)の底
面全周にわたって当該半導体搭載用凹部(6)の側面と
連続する外周部を有する溝(7)を切削加工により形成
することによって、本発明が目的とする基板を得ること
ができる。
3 (a) to 3 (d) are vertical sectional views of the semiconductor mounting substrate of the present invention showing the order of manufacturing steps. As shown in FIG. 3A, a conductor circuit (8) is formed on a substrate (1) having a metal foil adhered to its upper surface or upper and lower surfaces. Next, as shown in FIG. 2B, an opening (3) penetrating the substrate (1) is formed by cutting or punching. Next, as shown in FIG. 3C, a metal plate (4) is provided on the back surface side of the substrate of the opening so as to close the opening (3) through the substrate (1) and an adhesive layer (5). Bonding is performed to form a semiconductor mounting recess (6). Next, as shown in FIG. 4D, the side wall of the opening (3), the adhesive layer (5) and the surface of the metal plate (4) are simultaneously cut, and the protruding portion of the adhesive layer (5) is cut. In addition, the present invention has an object to form a groove (7) having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess (6) over the entire circumference of the bottom surface of the semiconductor mounting recess (6) by cutting. The substrate can be obtained.

なお、このように加工された後にあっては、半導体搭載
用基板凹部(6)内に半導体素子が銀ペーストなどを介
して実装される。上述の製造方法によれば前記基板
(1)と金属板(4)を接合する接着層(5)の流れ出
し量が比較的多くても接合後の切削加工により除去可能
であるため接合工程における条件等の制約が少ないとい
った利点がある。
After being processed in this manner, the semiconductor element is mounted in the semiconductor mounting substrate recess (6) via silver paste or the like. According to the above-described manufacturing method, even if the amount of the adhesive layer (5) for joining the substrate (1) and the metal plate (4) flowing out is relatively large, the adhesive layer (5) can be removed by cutting after joining, so the conditions in the joining step There is an advantage that there are few restrictions such as.

第4図(a)〜(c)は本発明の半導体搭載用基板の他
の製造方法を工程順に示す図である。同図(a)に示す
ように金属箔(2)が基板の上表面もしくは上下表面に
貼着された基板(1)に導体回路(8)を形成する。次
に同図(b)に示すように前記基板(1)の裏面に金属
板(4)が半導体搭載部の周辺領域のみに接着層(5)
を介して接合される。次に同図(c)に示すように基板
(1)の表面の半導体搭載部の周囲に相当する部分をエ
ンドミルにより溝掘り加工を前記金属板(4)の内部ま
で到達するように施し、半導体搭載用凹部(6)を形成
するのと同時に前記半導体搭載用凹部(6)の底面周囲
に連続した溝(7)を形成する。つまり、基板(1)の
半導体搭載領域の周囲に金属板(4)の内部まで到達す
る連続した溝掘り加工を施すことにより、基板(1)の
一部分及び接着層(5)のはみ出し部分を除去して半導
体搭載用凹部(6)を形成すると同時に、半導体搭載用
凹部(6)の底面全周にわたって半導体搭載用凹部
(6)の側面と連続する外周部を有する溝(7)を形成
することにより、本発明が目的とする基板を得ることが
できる。
FIGS. 4A to 4C are views showing another method of manufacturing the semiconductor mounting substrate of the present invention in the order of steps. As shown in FIG. 4A, a conductor circuit (8) is formed on a substrate (1) having a metal foil (2) attached to the upper surface or the upper and lower surfaces of the substrate. Next, as shown in FIG. 2B, a metal plate (4) is provided on the back surface of the substrate (1) and an adhesive layer (5) is formed only on the peripheral region of the semiconductor mounting portion.
Are joined through. Next, as shown in FIG. 3C, a portion corresponding to the periphery of the semiconductor mounting portion on the surface of the substrate (1) is subjected to grooving by an end mill so as to reach the inside of the metal plate (4). At the same time as forming the mounting recess (6), a continuous groove (7) is formed around the bottom surface of the semiconductor mounting recess (6). That is, a part of the substrate (1) and the protruding portion of the adhesive layer (5) are removed by performing continuous grooving processing that reaches the inside of the metal plate (4) around the semiconductor mounting area of the substrate (1). Forming a semiconductor mounting recess (6) and simultaneously forming a groove (7) having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess (6) over the entire bottom surface of the semiconductor mounting recess (6). Thus, the substrate intended by the present invention can be obtained.

なお、このように加工された後にあっては、半導体搭載
用凹部(6)内に半導体素子が銀ペーストなどを介して
実装される。上述の製造方法によれば前記基板に半導体
搭載用凹部(6)と前記半導体搭載用凹部(6)の底面
全周にわたる溝(7)を同時に形成することができ工程
が短縮されるという利点を持つ。
After being processed in this way, the semiconductor element is mounted in the semiconductor mounting recess (6) via silver paste or the like. According to the above-described manufacturing method, the semiconductor mounting recess (6) and the groove (7) around the entire bottom surface of the semiconductor mounting recess (6) can be formed in the substrate at the same time, which shortens the process. To have.

第5図(a)〜(e)は本発明の半導体搭載用基板の他
の実施態様の製造工程を工程順に示す図である。第5図
(a)に示すように金属箔(2)が基板の上表面もしく
は上下表面に貼着された基板(1)に、導体回路(8)
を形成する。次に同図(b)に示すように前記基板
(1)を貫通する開口部(3)打抜きあるいは切削によ
り形成する。次に同図(c)に示すように前記開口部
(3)の基板裏面側の周辺領域に凹所(9)を切削によ
り形成する。次に同図(d)に示すように前記凹所
(9)に前記開口部(3)を閉塞するように金属板
(4)を接着層(5)を介して接合して半導体搭載用凹
部(6)を形成する。次に同図(e)に示すように開口
部(3)の側壁、接着層(5)及び金属板(4)の表面
を同時に切削加工して、接着層(5)のはみ出し部分を
切削すると共に半導体搭載用凹部(6)の底面全周にわ
たって当該半導体搭載用凹部(6)の側面と連続する外
周部を有する溝(7)を形成することにより本発明が目
的とする基板を得ることができる。
5 (a) to 5 (e) are views showing the manufacturing steps of another embodiment of the semiconductor mounting substrate of the present invention in the order of steps. As shown in FIG. 5 (a), a conductor circuit (8) is attached to a substrate (1) having a metal foil (2) adhered to the upper surface or the upper and lower surfaces of the substrate.
To form. Next, as shown in FIG. 2B, the opening (3) penetrating the substrate (1) is formed by punching or cutting. Next, as shown in FIG. 3C, a recess (9) is formed by cutting in the peripheral region of the opening (3) on the back surface side of the substrate. Next, as shown in FIG. 3D, a metal plate (4) is bonded to the recess (9) via an adhesive layer (5) so as to close the opening (3), and a semiconductor mounting recess is formed. (6) is formed. Next, as shown in FIG. 7E, the side wall of the opening (3), the adhesive layer (5) and the surface of the metal plate (4) are simultaneously cut, and the protruding portion of the adhesive layer (5) is cut. At the same time, by forming a groove (7) having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess (6) over the entire circumference of the bottom surface of the semiconductor mounting recess (6), the substrate intended by the present invention can be obtained. it can.

第6図(a)〜(d)は本発明の半導体搭載用基板の実
施態様の他の製造工程を工程順に示す図である。第6図
(a)に示すように金属箔(2)が基板の上表面および
下表面に貼着された基板(1)に導体回路(8)が形成
された状態を示す縦断面図である。次に同図(b)を示
すように前記基板(1)の裏面にエンドミルを用いて凹
所(9)を形成する。
FIGS. 6A to 6D are views showing another manufacturing process of the embodiment of the semiconductor mounting substrate of the present invention in process order. FIG. 6 is a vertical cross-sectional view showing a state where a conductor circuit (8) is formed on a substrate (1) in which a metal foil (2) is attached to the upper and lower surfaces of the substrate as shown in FIG. 6 (a). . Next, a recess (9) is formed on the back surface of the substrate (1) using an end mill as shown in FIG.

次に同図(c)に示すように凹所(9)の底面に金属板
(4)が半導体搭載部の周辺領域のみに接着層(5)を
介して接合される。次に同図(d)に示すように基板
(1)の表面の半導体搭載部の周辺に相当する部分をエ
ンドミルにより溝掘り加工を前記金属板(4)の内部ま
で到達するように施し、半導体搭載用凹部(6)を形成
するのと同時に前記半導体搭載用凹部の底面周囲に連続
した溝(7)を形成することにより本発明が目的とする
基板を得ることができる。
Next, as shown in FIG. 3C, the metal plate (4) is bonded to the bottom surface of the recess (9) only in the peripheral region of the semiconductor mounting portion via the adhesive layer (5). Next, as shown in FIG. 3D, a portion corresponding to the periphery of the semiconductor mounting portion on the surface of the substrate (1) is subjected to grooving by an end mill so as to reach the inside of the metal plate (4). By forming the mounting recess (6) and at the same time forming the continuous groove (7) around the bottom surface of the semiconductor mounting recess, the substrate intended by the present invention can be obtained.

以下実施例に基づいてさらに説明する。Further description will be given below based on examples.

[実施例] 実施例1 第1図において、ガラス−エポキシ樹脂からなる基板
(1)の上下表面には銅箔(2)が貼着されており、前
記基板(1)の表面に銅メッキを施したのち、感光性樹
脂フィルムを貼着し露光現像して回路パターンを形成
し、エッチングを行ない、さらに導体表面にニッケルメ
ッキ、金メッキを施すことによって導体回路(8)を形
成した。次に前記基板(1)に開口部(3)をパンチン
グにより形成した。そののち基板(1)の裏面側にエポ
キシ樹脂からなる接着層(5)を介してアルミニウム板
を接合した。そののち開口部(3)の内側面を構成する
基板(1)と接着層(5)、及び金属板(4)の表面と
をエンドミルを用いて同時に切削加工を施すことによっ
て本発明による半導体搭載用基板を製作した。
Example 1 In FIG. 1, a copper foil (2) is attached to the upper and lower surfaces of a substrate (1) made of glass-epoxy resin, and copper plating is applied to the surface of the substrate (1). After that, a photosensitive resin film was adhered, exposed and developed to form a circuit pattern, etching was performed, and the conductor surface was nickel-plated and gold-plated to form a conductor circuit (8). Next, an opening (3) was formed in the substrate (1) by punching. After that, an aluminum plate was bonded to the back surface side of the substrate (1) via an adhesive layer (5) made of an epoxy resin. After that, the substrate (1) constituting the inner surface of the opening (3), the adhesive layer (5), and the surface of the metal plate (4) are simultaneously cut using an end mill to mount the semiconductor according to the present invention. I made a substrate.

実施例2 第2図において、ガラス−変性トリアジン樹脂からなる
基板の上下表面には銅箔(2)が貼着されており、前記
基板(1)の全面に銅メッキを施したのち基板表面に感
光性樹脂フィルムを貼付し、所望の回路パターン以外の
部分に前記感光性樹脂フィルムを残すように露光現像
し、所望の回路パターン上のみに銅メッキ、はんだメッ
キを施し前記はんだメッキをエッチングレジストとして
エッチングを行ない、さらに導体表面にニッケルメッ
キ、金メッキを施すことにより導体回路(8)を形成し
た。次に前記基板(1)に開口部(3)をパンチングに
より形成した。そののち開口部(3)の基板裏面側にエ
ンドミルを用いて切削加工を施し凹所(9)を形成し
た。そののち前記凹所(9)に変性トリアジン樹脂から
なる接着層(5)を介して予めニッケル、金メッキが施
されたりん青銅板(4)を接合した。さらに開口部
(3)の内側面を構成する基板(1)と接着層(5)、
及び金属板(4)の表面とをエンドミルにより同時に切
削加工することにより本発明による半導体搭載用基板を
製作した。
Example 2 In FIG. 2, copper foil (2) is attached to the upper and lower surfaces of a substrate made of glass-modified triazine resin, and the entire surface of the substrate (1) is plated with copper and then the substrate surface is coated. A photosensitive resin film is attached, exposed and developed so that the photosensitive resin film is left in a portion other than the desired circuit pattern, and copper plating or solder plating is applied only on the desired circuit pattern, and the solder plating is used as an etching resist. The conductor circuit (8) was formed by etching and then nickel-plating and gold-plating the conductor surface. Next, an opening (3) was formed in the substrate (1) by punching. After that, a cutting process was performed on the substrate back surface side of the opening (3) using an end mill to form a recess (9). After that, a phosphor bronze plate (4) previously plated with nickel and gold was bonded to the recess (9) through an adhesive layer (5) made of a modified triazine resin. Further, the substrate (1) and the adhesive layer (5) which constitute the inner surface of the opening (3),
A semiconductor mounting substrate according to the present invention was manufactured by simultaneously cutting and the surface of the metal plate (4) with an end mill.

実施例3 第2図において、ガラス−ポリイミド樹脂からなる基板
(1)の上下表面には銅箔(2)が貼着されており、前
記基板(1)の全面に銅メッキを施したのち基板表面に
感光性樹脂フィルムを貼付し、露光現像して回路パター
ンを形成しエッチングを行ない導体表面にはんだメッキ
を施すことにより導体回路(8)を形成した。次に前記
基板(1)の裏面側にエンドミルを用いて切削加工を施
し凹所(9)を形成した。そののち矩形に中抜き加工を
したポリイミド樹脂からなる接着シート(5)を介して
前記凹所(9)内にコバール板(4)を接合した。その
のち基板(1)の表面からエンドミルによりコバール板
(4)に到達する深さまで矩形に溝掘加工を施し、基板
(1)の一部分及び接着層のはみ出し部分を除去するこ
とにより半導体搭載用凹部(6)と前記凹部(6)の底
面全周にわたる溝(7)とを同時に形成し、本発明によ
る半導体搭載用基板を製作した。
Example 3 In FIG. 2, a copper foil (2) is attached to the upper and lower surfaces of a substrate (1) made of glass-polyimide resin, and the whole surface of the substrate (1) is plated with copper and then the substrate is formed. A photosensitive resin film was attached to the surface, exposed and developed to form a circuit pattern, which was then etched to form a conductor circuit (8) by solder plating on the conductor surface. Next, a cutting process was performed on the back surface side of the substrate (1) using an end mill to form a recess (9). After that, the Kovar plate (4) was joined to the inside of the recess (9) through an adhesive sheet (5) made of a polyimide resin which was hollowed into a rectangular shape. After that, a rectangular groove is formed from the surface of the substrate (1) by an end mill to a depth reaching the Kovar plate (4), and a part of the substrate (1) and a protruding part of the adhesive layer are removed to form a semiconductor mounting recess. The semiconductor mounting substrate according to the present invention was manufactured by simultaneously forming (6) and the groove (7) over the entire bottom surface of the recess (6).

第9図は本発明の半導体搭載用基板を用いて製作された
ピングリッドアレイの一実施例を示す基板の裏面から見
た斜視図であり、また第10図は第9図に示す基板をA−
A′に沿って切った縦断面図である。このピングリッド
アレイは本発明の半導体搭載用基板(1)の半導体搭載
用凹部(6)に半導体素子(16)が搭載されたのち、ワ
イヤーボンディングされさらに周囲をエポキシ樹脂(1
8)で封止されている。また基板(1)の金属板(4)
との反対面側には封止樹脂用枠板(12)が接着層(13)
を介して接合されるとともに、外部接続用の導体ピン
(15)が前記封止樹脂用枠板(12)を貫通した形で導体
回路と電気的に接続したスルーホール(14)に固定され
ている。
FIG. 9 is a perspective view of an embodiment of a pin grid array manufactured using the semiconductor mounting substrate of the present invention as seen from the back side of the substrate, and FIG. 10 is a perspective view of the substrate shown in FIG. −
It is a longitudinal cross-sectional view cut along A '. This pin grid array is wire-bonded after the semiconductor element (16) is mounted in the semiconductor mounting recess (6) of the semiconductor mounting substrate (1) of the present invention, and then the periphery is covered with epoxy resin (1).
It is sealed with 8). Moreover, the metal plate (4) of the substrate (1)
The frame plate (12) for the sealing resin is on the side opposite to the adhesive layer (13).
And the conductor pin (15) for external connection is fixed to the through hole (14) electrically connected to the conductor circuit while penetrating through the sealing resin frame plate (12). There is.

〔発明の効果〕〔The invention's effect〕

以上のように本発明による半導体搭載用基板にあつて
は、半導体搭載用凹部の底面全周にわたって、当該半導
体搭載用凹部の側面と連続する外周部を有する溝を形成
することにより、基板と金属板を接合する際に生ずる半
導体搭載部への接着材のはみ出し部分が完全に除去され
るので半導体搭載用凹部を有する有効に利用することが
でき、半導体搭載用基板の小型化が容易である。
As described above, in the semiconductor mounting substrate according to the present invention, the substrate and the metal are formed by forming the groove having the outer peripheral portion continuous with the side surface of the semiconductor mounting recess over the entire bottom surface of the semiconductor mounting recess. Since the protruding portion of the adhesive material to the semiconductor mounting portion generated when joining the plates is completely removed, it can be effectively used as having the semiconductor mounting recess, and the semiconductor mounting substrate can be easily miniaturized.

また前記半導体搭載用凹部の底面の切削加工を底面周囲
のみに限定することが可能であるため、半導体素子を直
接固定する底面部分の金属板の表面は材料とする金属平
板の表面形状をそのまま露出させて利用できるため、つ
まり半導体搭載用凹部の底面を平滑に仕上げることが容
易であるため搭載される半導体素子の位置精度の向上、
および該基板が安定した品質で得られることによるコス
トダウンを計ることが可能である。
Further, since it is possible to limit the cutting work of the bottom surface of the semiconductor mounting recess to only the periphery of the bottom surface, the surface of the metal plate at the bottom portion for directly fixing the semiconductor element exposes the surface shape of the metal flat plate as a material. Since it is possible to use it, that is, it is easy to finish the bottom surface of the semiconductor mounting recess smoothly, the positional accuracy of the mounted semiconductor element is improved,
And it is possible to reduce the cost by obtaining the substrate with stable quality.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明による半導体搭載用基板の縦断面図、第
2図は本発明の半導体搭載用基板の他の実施態様の構造
の縦断面図である。第3図および第4図は本発明による
半導体搭載用基板の縦断面を工程順に示す図であり、第
5図および第6図は本発明の半導体搭載用基板の他の実
施態様の縦断面をそれぞれ別の工程順に示した図であ
る。第7図および第8図はそれぞれ従来例の半導体搭載
用基板の縦断面図である。第9図は本発明の半導体搭載
用基板を用いて製作されたピングリッドアレイの一例を
示す基板を裏面からみた斜視図であり、また第10図は第
9図に示す基板をA−A′線に沿って切った縦断面図で
ある。 符号の説明 1…基板、2…銅箔、3…開口部、4…金属板、5…接
着層、6……半導体搭載用凹部、7…溝、8…導体回
路、9…凹所、10…接着材のはみ出し部分、11…半導体
搭載用凹部底面の凹凸、12…封止樹脂用枠板、13…接着
層、14…スルーホール、15…導体ピン、16…導体ピンの
鍔、17…半導体素子、18…ボンディングワイヤー、19…
封止樹脂。
FIG. 1 is a vertical sectional view of a semiconductor mounting substrate according to the present invention, and FIG. 2 is a vertical sectional view of a structure of another embodiment of the semiconductor mounting substrate of the present invention. 3 and 4 are views showing a longitudinal section of a semiconductor mounting substrate according to the present invention in the order of steps, and FIGS. 5 and 6 show longitudinal sections of another embodiment of the semiconductor mounting substrate of the present invention. It is the figure which showed each different process order. FIG. 7 and FIG. 8 are vertical sectional views of a conventional semiconductor mounting substrate, respectively. FIG. 9 is a perspective view of a substrate showing an example of a pin grid array manufactured using the semiconductor mounting substrate of the present invention when viewed from the back side, and FIG. 10 is a plan view of the substrate shown in FIG. It is a longitudinal cross-sectional view cut along a line. DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Copper foil, 3 ... Opening, 4 ... Metal plate, 5 ... Adhesive layer, 6 ... Semiconductor mounting recess, 7 ... Groove, 8 ... Conductor circuit, 9 ... Recess, 10 … Protruding part of adhesive, 11… Concavo-convex on bottom surface of semiconductor mounting recess, 12… Frame plate for sealing resin, 13… Adhesive layer, 14… Through hole, 15… Conductor pin, 16… Flange of conductor pin, 17… Semiconductor element, 18 ... Bonding wire, 19 ...
Sealing resin.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】プラスチック材料からなる半導体搭載用基
板の半導体搭載領域に、前記基板の表面から裏面まで貫
通する開口部が形成されており、前記開口部の基板裏面
側に前記開口部を閉塞するように金属板が接着層を介し
て接合されることにより半導体搭載用凹部が形成された
半導体搭載用基板において、 前記半導体搭載用凹部の底面全周にわたって、当該半導
体搭載用凹部の側面と連続する外周部を有する溝が形成
されてなることを特徴とする半導体搭載用基板。
1. A semiconductor mounting area of a semiconductor mounting substrate made of a plastic material is formed with an opening penetrating from the front surface to the back surface of the substrate, and the opening is closed on the back surface side of the substrate. In the semiconductor mounting substrate in which the semiconductor mounting recess is formed by bonding the metal plates through the adhesive layer as described above, the side surface of the semiconductor mounting recess is continuous over the entire bottom surface of the semiconductor mounting recess. A semiconductor mounting substrate, wherein a groove having an outer peripheral portion is formed.
【請求項2】前記半導体搭載用基板の前記開口部の基板
裏面側の周辺領域には凹所が形成されており、前記凹所
に金属板が接着層を介して接合されていることを特徴と
する特許請求の範囲第1項記載の半導体搭載用基板。
2. A recess is formed in a peripheral region of the opening of the semiconductor mounting substrate on the back surface side of the substrate, and a metal plate is bonded to the recess through an adhesive layer. The semiconductor mounting substrate according to claim 1.
【請求項3】下記(a)〜(d)の工程からなる半導体
搭載用基板の製造方法。 (a)プラスチック材料からなる半導体搭載用基板に導
体回路を形成する工程; (b)前記基板の半導体搭載領域に、前記基板の表面か
ら裏面まで貫通する開口部を形成する工程; (c)前記開口部の基板裏面側に、前記開口部を閉塞す
るように接着層を介して金属板を接合して、半導体搭載
用凹部を形成する工程; (d)前記開口部の側壁、接着層及び金属板の表面を同
時に切削加工して、前記接着層のはみ出し部分を切削す
ると共に前記半導体搭載用凹部の底面全周にわたって当
該半導体搭載用凹部の側面と連続する外周部を有する溝
を形成する工程。
3. A method of manufacturing a semiconductor mounting substrate comprising the steps (a) to (d) below. (A) a step of forming a conductor circuit on a semiconductor mounting substrate made of a plastic material; (b) a step of forming an opening penetrating from a front surface to a back surface of the substrate in a semiconductor mounting area of the substrate; A step of forming a semiconductor mounting recess by bonding a metal plate to the substrate rear surface side of the opening via an adhesive layer so as to close the opening; (d) a sidewall of the opening, an adhesive layer, and a metal. A step of simultaneously cutting the surface of the plate to cut the protruding portion of the adhesive layer and forming a groove having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess over the entire bottom surface of the semiconductor mounting recess.
【請求項4】下記(a)〜(c)の工程からなる半導体
搭載用基板の製造方法。 (a)プラスチック材料からなる半導体搭載用基板に導
体回路を形成する工程; (b)前記基板裏面側に、前記基板の半導体搭載領域の
周囲のみに設けた接着層を介して金属板を接合する工
程; (c)前記基板の半導体搭載領域の周囲に前記金属板の
内部まで到達する連続した溝掘り加工を施すことによ
り、前記基板の一部分及び前記接着層のはみ出し部分を
除去して半導体搭載用凹部を形成すると同時に、当該半
導体搭載用凹部の底面全周にわたって当該半導体搭載用
凹部の側面と連続する外周部を有する溝を形成する工
程。
4. A method for manufacturing a semiconductor mounting substrate comprising the steps (a) to (c) below. (A) A step of forming a conductor circuit on a semiconductor mounting substrate made of a plastic material; (b) A metal plate is bonded to the back side of the substrate through an adhesive layer provided only around the semiconductor mounting region of the substrate. Step; (c) For semiconductor mounting by performing a continuous grooving process that reaches the inside of the metal plate around the semiconductor mounting region of the substrate to remove a part of the substrate and a protruding part of the adhesive layer. A step of forming a groove having an outer peripheral portion which is continuous with the side surface of the semiconductor mounting recess over the entire bottom surface of the semiconductor mounting recess at the same time of forming the recess.
【請求項5】下記(a)〜(e)の工程からなる半導体
搭載用基板の製造方法。 (a)プラスチック材料からなる半導体搭載用基板に導
体回路を形成する工程; (b)前記基板の半導体搭載領域に、前記基板の表面か
ら裏面まで貫通する開口部を形成する工程; (c)前記開口部の基板裏面側の周辺領域に凹所を形成
する工程; (d)前記凹所に前記開口部を閉塞するように接着層を
介して金属板を接合して、半導体搭載用凹部を形成する
工程; (e)前記開口部の側壁、接着層及び金属板の表面を同
時に切削加工して、前記接着層のはみ出し部分を切削す
ると共に前記半導体搭載用凹部の底面全周にわたって当
該半導体搭載用凹部の側面と連続する外周部を有する溝
を形成する工程。
5. A method for manufacturing a semiconductor mounting substrate, which comprises the following steps (a) to (e): (A) a step of forming a conductor circuit on a semiconductor mounting substrate made of a plastic material; (b) a step of forming an opening penetrating from a front surface to a back surface of the substrate in a semiconductor mounting area of the substrate; A step of forming a recess in the peripheral region of the opening on the back surface side of the substrate; (d) forming a semiconductor mounting recess by bonding a metal plate to the recess via an adhesive layer so as to close the opening. (E) The side wall of the opening, the adhesive layer, and the surface of the metal plate are simultaneously cut to cut the protruding portion of the adhesive layer, and at the same time, the semiconductor mounting recess is entirely covered with the semiconductor mounting recess. A step of forming a groove having an outer peripheral portion continuous with the side surface of the recess.
【請求項6】下記(a)〜(d)の工程からなる半導体
搭載用基板の製造方法。 (a)プラスチック材料からなる半導体搭載用基板に導
体回路を形成する工程; (b)前記基板の半導体搭載領域の裏面に凹所を形成す
る工程; (c)前記凹所の底面に、半導体搭載領域の周囲のみに
設けた接着層を介して金属板を接合する工程; (d)前記基板表面の半導体搭載領域の周囲に前記金属
板の内部まで到達する連続した溝掘り加工を施すことに
より、前記基板の一部分及び前記接着層のはみ出し部分
を除去して半導体搭載用凹部を形成すると同時に、当該
半導体搭載用凹部の底面全周にわたって当該半導体搭載
用凹部の側面と連続する外周部を有する溝を形成する工
程。
6. A method for manufacturing a semiconductor mounting substrate comprising the steps (a) to (d) below. (A) A step of forming a conductor circuit on a semiconductor mounting substrate made of a plastic material; (b) A step of forming a recess on the back surface of the semiconductor mounting region of the substrate; (c) A semiconductor mounting on the bottom surface of the recess. A step of joining a metal plate through an adhesive layer provided only on the periphery of the region; (d) by subjecting the periphery of the semiconductor mounting region on the substrate surface to continuous grooving reaching the inside of the metal plate, A part of the substrate and a protruding portion of the adhesive layer are removed to form a semiconductor mounting recess, and at the same time, a groove having an outer peripheral portion continuous with the side surface of the semiconductor mounting recess over the entire bottom surface of the semiconductor mounting recess. Forming process.
JP61154435A 1986-06-30 1986-06-30 Semiconductor mounting substrate and manufacturing method thereof Expired - Lifetime JPH0746707B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61154435A JPH0746707B2 (en) 1986-06-30 1986-06-30 Semiconductor mounting substrate and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61154435A JPH0746707B2 (en) 1986-06-30 1986-06-30 Semiconductor mounting substrate and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS639956A JPS639956A (en) 1988-01-16
JPH0746707B2 true JPH0746707B2 (en) 1995-05-17

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Application Number Title Priority Date Filing Date
JP61154435A Expired - Lifetime JPH0746707B2 (en) 1986-06-30 1986-06-30 Semiconductor mounting substrate and manufacturing method thereof

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JP (1) JPH0746707B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200546A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Semiconductor device
JPS60253291A (en) * 1984-05-29 1985-12-13 イビデン株式会社 Electronic part placing substrate and method of producing same

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Publication number Publication date
JPS639956A (en) 1988-01-16

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