JPH0745786A - Composite integrated circuit parts - Google Patents

Abstract

PURPOSE:To provide a composite integrated circuit parts wherein a ceramic substrate is used and a thin-film integrated circuit element having a good characteristic is obtained. CONSTITUTION:In a composite integrated circuit part, on a ceramic substrate 101 whereon a thin-film integrated circuit 103 is formed, a layered type capacitor 106, a layered type inductor 107 and resistors are provided respectively, or a layered body composed of the capacitor 106, the inductor 107 and the resistors is provided. In this composite integrated circuit part, a glass layer 102 having a silicon oxide as its main component is formed in between the ceramic substrate 101 and the thin-film integrated circuit 103, and thereby, the irregularity of the surface of the ceramic substrate 101 is made flat.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite integrated circuit component, and more particularly to a ceramic substrate having a thin film integrated circuit formed thereon.
The present invention relates to a composite integrated circuit in which a laminated body forming a passive element circuit is formed.

[0002]

2. Description of the Related Art A composite integrated circuit component having a structure in which a substrate on which a thin film integrated circuit is formed and a multilayer capacitor, a multilayer inductor or a resistor formed by a lamination method, or a hybrid component thereof is combined has been conventionally known. .

Multilayer capacitors by the lamination method are generally
The raw material powder of the dielectric and the binder are mixed to form a paste, which is printed in a sheet shape on a temporary supporting substrate that can be easily peeled off. Next, an electrode conductor material paste is laminated and printed thereon, and this is alternately laminated and printed to form a laminate. Next, a magnetic material and a conductor material paste are similarly laminated and printed on the laminated body to laminate the inductance portion.
Then, after the laminated body is dried, the laminated body from the temporary support plate is baked at a high temperature of, for example, about 800 ° C. to 950 ° C. and peeled off to form a circuit element including an inductor, a capacitor, and a resistor. To get

FIG. 6 shows a composite integrated circuit in which the laminated body thus formed and an integrated circuit chip are combined. In FIG. 6, a multilayer inductor 61 and a multilayer capacitor 6
2. A bare integrated circuit chip 65 is mounted on a laminated body 64 composed of a resistance circuit composed of a resistor 63 and a conductor 68 with a metal film 67 interposed therebetween. After connecting the electrode pad 66 of the body 64 by wire bonding, a package 69 is formed of plastic or ceramic to form a composite integrated circuit component.

However, such a composite circuit component requires complicated steps such as printing the laminate on the temporary supporting substrate in a laminated manner and then removing the temporary supporting substrate. In order to eliminate such inconvenience, it has been attempted to form a laminated capacitor, a laminated inductor or a resistor, or a laminated body combining these on a substrate on which a thin film integrated circuit is formed.

[0006]

As a substrate for forming a thin film integrated circuit of the composite integrated circuit component having the above-mentioned structure, a ceramic substrate which can be obtained at low cost may be used. However, since the surface of the ceramic substrate has irregularities, when a semiconductor layer for forming a thin film integrated circuit element is directly formed,
The unevenness of the surface of the ceramic substrate affects the surface of the semiconductor layer, and there is a problem that the channel length of the semiconductor element is changed and the characteristics of the circuit element are impaired.

Therefore, an object of the present invention is to use a ceramic substrate as a substrate for forming a thin film integrated circuit, which has good characteristics.
An object is to provide an inexpensive and compact composite integrated circuit component.

[0008]

In order to solve the above-mentioned problems, the present invention provides a multilayer capacitor, a multilayer inductor or a resistor or a multilayer body combining these on a ceramic substrate on which a thin film integrated circuit is formed. In a composite integrated circuit component, a thin film integrated circuit element is formed by forming a glass layer containing silicon oxide as a main component on the surface of a ceramic substrate forming a thin film integrated circuit and flattening the unevenness of the substrate surface. is there.

A heat-dissipating layer made of a refractory metal having good heat conductivity or a silicide thereof may be provided between the ceramic substrate and the glass layer.

[0010]

With the structure of the present invention, the unevenness of the surface of the ceramic substrate can sufficiently withstand the subsequent semiconductor process,
The heat-resistant glass material layer can be used for flattening, and a circuit element having a short channel length and good characteristics can be formed on the substrate.

[0011]

Embodiments of the present invention will be described with reference to FIGS. FIG. 1 is a schematic configuration diagram of an embodiment of the present invention.

In FIG. 1, 100 is a hybrid integrated circuit component, 101 is a ceramic substrate, 102 is a phosphosilicate glass (PSG) film, 103 is a thin film integrated circuit formed with a thin film transistor (TFT), 104 is a pad electrode, 105 is an interlayer insulating film, 106 is a multilayer capacitor, 107 is a multilayer inductor, 108 is an electrode, 109
Indicates an extraction electrode.

The surface of the ceramic substrate 101 of the hybrid integrated circuit component 100 shown in FIG. 1 is coated with, for example, a PSG film 102 whose main component is heat resistant SiO ₂ . The PSG film 102 is thick enough to flatten the irregularities on the surface of the ceramic substrate. This PSG film 102
After that, since the semiconductor process is performed at a temperature of 850 ° C. or higher, it is composed of a glass film containing a SiO ₂ film as a main component so as to withstand this.

Further, in order to improve heat dissipation of the ceramic substrate 101, it is desirable that the PSG film 102 has a thickness of 10 μm or less. A laminated body composed of a multilayer capacitor 106 and a laminated inductor 107 with an inter-layer insulating film 105 on a thin film integrated circuit such as a TFT formed on a ceramic substrate 101 flattened with a PSG film 102 of the present invention. Are formed.

FIG. 2 is a schematic explanatory view of a TFT used in a thin film integrated circuit used in an embodiment of the present invention, and FIGS. 3 to 4 are explanatory views of a manufacturing process of this TFT. 2 to 4, 101 is a ceramic substrate such as alumina, 102 is a glass layer containing silicon oxide as a main component of the present invention, for example, a PSG film, 203 is an active silicon film forming an element such as TFT, and 204 is A gate insulating film, 205 a gate electrode,
206 and 207 are source / drain regions, 208 is PS
G film, 209 indicates a doped silicon electrode layer.

In FIG. 2, a glass layer 102 containing silicon oxide as a main component is formed on a ceramic substrate 101 to flatten the surface of the ceramic substrate and then a TFT is formed.

3 and 4 are explanatory views of the manufacturing process of this TFT. First, triethoxyphosphorus P (OC ₂ H ₅ ) ₃ and tetraethoxysilane Si (OC ₂ H ₅ ) ₄ are spin-coated on the surface of a ceramic substrate 101 made of alumina,
Anneal at 950 ° C. in oxygen atmosphere for 5 hours. Thus, a reflow film made of a PSG film having a thickness of 5 μm is obtained as the glass layer 102 containing silicon oxide as a main component (see FIG. 3A).

Here, as the film for flattening the irregularities on the surface of the ceramic substrate, the glass containing SiO ₂ as the main component is used as in the present embodiment, and the semiconductor process for forming the subsequent TFT is 850. Since it is performed at a temperature of not less than 0 ° C., it has heat resistance enough to withstand this, and the coefficient of thermal expansion is not so different from both.

Also, to prevent the PSG film from accumulating heat, 1
It is desirable to set the thickness to 0 μm or less. This makes it possible to obtain an inexpensive substrate with good heat dissipation. Next this PS
Amorphous silicon (α-Si) film 2 on the G film 102
03 'is formed to a thickness of 500 to 6000Å by the low pressure CVD method (see FIG. 3 (B)).

The film forming conditions at this time are as follows. Si ₂ H ₆ 100 to 500 SCCM He 500 SCCM Reaction pressure 0.1 to 1 Torr Film formation temperature 430 to 500 ° C. Next, after patterning this α-Si film 203 ′ into a predetermined island shape, a temperature of about 600 ° C. And heat treatment in a nitrogen atmosphere for about 40 hours to crystallize the active silicon film 203.
Is obtained (see FIG. 3 (C)).

Next, in order to form a gate insulating film, a silicon oxide film 204 'having a film thickness of 500 to 2000 Å is formed by dry oxidation (see FIG. 3D). The conditions for forming the gate insulating film are as follows.

O ₂ 2.5 SLM Reaction temperature 850 to 1100 ° C. Next, a P or B-doped silicon film 205 ′ serving as a gate electrode is formed on this by a low pressure CVD method to 1000 to 4
It is formed with a film thickness of 000Å (see FIG. 3 (E)).

After that, an etching process is performed according to a predetermined pattern to form the gate insulating film 204 and the gate electrode 20.
5 is formed (see FIG. 3 (F)). This gate electrode 20
Using the mask 5 as a mask, the portions to be the source / drain regions are doped with, for example, P by ion doping to form n-type source / drain regions 206 and 207 (see FIG. 4A).

At this time, since the surface of the ceramic substrate 101 is flattened by the glass layer 102 containing silicon oxide as a main component, the active silicon layer 203 also has a flat surface. The channel length L of the TFT formed in this can also be controlled to 10 μm or less. Therefore, it is possible to obtain an element having good frequency characteristics, so that a wide range of circuit applications can be obtained when designing an integrated circuit.

Next, the whole of these substrates is subjected to 60 in a nitrogen atmosphere.
The dopant is activated by heating at 0 ° C. for 12 hours. After that, a PSG film 208 is formed as an interlayer insulating film with a film thickness of 4000 to 8000Å by an atmospheric pressure CVD method, and the PSG film 208 is patterned according to a necessary pattern for forming an electrode to form an opening (see FIG. 4 (B)).

Next, a second doped silicon electrode layer 209 for electrodes is formed to obtain a TFT as shown in FIG. In the case of forming a thin film integrated circuit, an interlayer insulating film 105 such as the PSG film of FIG. 1 which also serves as a protective film is spin-coated by a chip-on-glass method after this, through holes for electrodes are formed, and Then, the connection electrode is patterned to be connected to another circuit element similarly formed.

The interlayer insulating film 105 can also be obtained by forming silicon alkoxide or phosphorus alkoxide in an appropriate thickness and firing it. Other techniques such as CVD
It can also be formed by a method.

Further, when another wiring is required in constructing the thin film integrated circuit, an interlayer insulating film and a doped silicon film are similarly laminated to form a multilayer wiring. Next, a laminated body that constitutes a passive element is provided by using a printing method on the substrate 101 on which the thin film integrated circuit is formed. FIG. 5 shows a schematic process diagram in the case of forming a laminated inductor as a laminated body.

The magnetic material used is Ni-Cu-
Zn ferrite is used, and this material is mixed with an organic synthetic resin binder to prepare a base material paste for printing. It is also possible to mix with other materials according to the required properties.

Interlayer insulating film 1 using this paste as a protective film
The magnetic material layer 211 is printed in a predetermined pattern by a printing method on the substrate on which the thin film integrated circuit is formed, on which No. 05 is formed (see FIG. 5A).

Next, as the conductor material of the inductor, Ag-
Pd powder is used and mixed with a synthetic resin binder to form a printing paste, and the conductor material layer 212 is printed on the magnetic material 211 in a predetermined pattern (see FIG. 5B).

At this time, the extraction electrode 10 of the thin film integrated circuit
4 and the conductor material layer 212 are designed in a pattern so that they can be electrically connected to each other, and through holes for connection are provided when the magnetic material layer 211 is printed.

In this way, the base material layers containing the magnetic material and the conductor material layers are alternately laminated and printed, and this laminated body is printed a plurality of times in accordance with the pattern designed to form the inductor.

At this time, if necessary, a part of the pattern can be utilized to form a conducting portion connected to the extraction electrode of the thin film integrated circuit inside the inductor.

Next, the extraction electrode 21 of the hybrid integrated circuit component
After printing 3 with a conductive material, all of the substrates, including these laminates, are subjected to a predetermined temperature, for example 800-1000 ° C.,
In this embodiment, firing is performed at 850 ° C. to remove the organic binder in the laminated body and fire the inductor.

Finally, the entire substrate including the laminated body is heat-treated in a hydrogen atmosphere at 400 ° C. for 1 hour to be hydrogenated,
Active silicon film 10 formed on ceramic substrate 101
By reducing the defect level density in 3, the composite thin film integrated circuit component of this example is completed.

In the above embodiment, the PS film is directly used as the reflow film on the ceramic substrate 101 forming the thin film integrated circuit.
Although the example of forming the glass layer 102 containing silicon oxide as a main component and formed of the G film has been described, in the present invention, a refractory metal having good thermal conductivity or a silicide thereof is provided between the ceramic substrate and the reflow film. Can be formed.

As the refractory metal having good thermal conductivity, molybdenum Mo, tungsten W, tantalum Ta, zirconium Zr, cobalt Co, hafnium Hf, etc. can be used, and its silicide can also be used.

This can be formed by forming, for example, a Mo film on a ceramic substrate such as alumina by a sputtering method. The film forming conditions at this time are as follows.

Argon pressure 0.5 to 10 mTorr Reaction temperature 300 to 500 ° C. Power 1 KW Next, a PSG film is spin-coated on the substrate on which the Mo film is formed to form a reflow film. The subsequent steps are the same as in the above embodiment.

As a result, even if a heat treatment process such as a semiconductor process is performed thereafter, the heat is sufficiently radiated from the substrate and the characteristics of the element are not adversely affected. Further, in the above embodiment,
Although an example in which a laminated inductor is formed as a laminated body on a substrate on which a thin film integrated circuit is formed has been described, the present invention is not limited to this, and other passive circuit elements such as resistors, laminated capacitors or A combination of them can also be used.

Further, the method of forming these laminated bodies is not limited to the printing method described in the above embodiment, but a sputtering method, a vapor deposition method or the like can be used, or a combination thereof can be used.

Silver A is used as a conductive material for forming the laminate.
g, gold Au, copper Cu, palladium Pd, or alloys of these, other magnetic materials include zinc ferrite, M
Alumina, barium titanate, titanium oxide or the like can be used as the dielectric material such as n-Zn ferrite or iron oxide ferrite.

In the above embodiment, an example was described in which a laminated body was formed after forming a thin film integrated circuit on a substrate provided with the reflow film of the present invention, but the present invention is a laminated body formed in another step. Can also be mounted on said substrate.

Further, in the above-described embodiment, an example in which a high temperature process of 800 ° C. or higher is performed as a semiconductor process has been described. However, even in the case of a low temperature process, a thin film integrated circuit having excellent characteristics can be obtained by providing the reflow film. .

In the above embodiment, the case where the PSG film is used as the glass layer 102 containing silicon oxide as a main component has been described, but the present invention is not limited to this, for example, BSG (borosilicate glass). , B
-PSG (boro-phosphosilicate glass), NS
G-PSG (non-doped silicate glass-phosphosilicate glass) or the like can also be used.

Similarly, as the interlayer insulating film 105, PSG
It is not limited to BSG, B-PSG, NS
G-PSG or the like can also be used.

[0048]

With the structure of the present invention, it is possible to integrate a laminated body including passive elements and a ceramic substrate on which a thin film integrated circuit having desired characteristics is formed.
It is possible to reduce the size, density and cost of the composite thin film integrated circuit component.

Further, according to the present invention, a thin film integrated circuit having excellent characteristics can be formed on an inexpensive ceramic substrate. In particular, since a semiconductor substrate can be subjected to a semiconductor process at a relatively high temperature by using a ceramic substrate, it is possible to form an integrated circuit element having a wide range of applications of a circuit to be formed.

[Brief description of drawings]

FIG. 1 is a schematic explanatory diagram of an embodiment of the present invention.

FIG. 2 is a schematic explanatory diagram of a thin film transistor (TFT) used in an embodiment of the present invention.

FIG. 3 is a part of a manufacturing process explanatory view of a TFT used in an embodiment of the present invention.

FIG. 4 is a continuation of the manufacturing process explanatory view of the TFT used in one embodiment of the present invention.

FIG. 5 is a schematic explanatory view of a manufacturing process according to an embodiment of the present invention.

FIG. 6 is a schematic explanatory view of a conventional composite integrated circuit component.

[Explanation of symbols]

 101 Ceramic Substrate 102 Glass Layer Containing Silicon Oxide as Main Component 103 Thin Film Integrated Circuit 104 Pat Electrode 105 Interlayer Insulating Film 106 Multilayer Capacitor 107 Multilayer Inductor 108 Conductor Layer 109 Extraction Electrode

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication location H05K 3/38 A 7011-4E 3/46 Q 6921-4E (72) Inventor Yukio Yamauchi Atsugi Kanagawa 398, Hase Hachi, Ltd. Inside the Semiconductor Energy Laboratory Co., Ltd. (72) Inventor, Naoya Sakamoto 398, Hase, Atsugi City, Kanagawa Prefecture

Claims (3)

[Claims] 1. A composite integrated circuit component comprising a ceramic substrate on which a thin film integrated circuit is formed, and a multilayer capacitor, a multilayer inductor, a resistor, or a laminated body in which these are composited, wherein the ceramic substrate and the thin film integrated circuit are provided. A composite integrated circuit component, characterized in that a glass layer containing silicon oxide as a main component is formed therebetween to flatten the irregularities on the surface of the ceramic substrate. 2. A refractory metal layer having good thermal conductivity or a silicide layer thereof is formed between the ceramic substrate and the glass layer containing silicon oxide as a main component. Composite integrated circuit parts. 3. The composite integrated circuit component according to claim 1, wherein the thin film transistor used in the thin film integrated circuit has a channel length of 10 μm or less.