JPH0744198B2 - Wedge for wire bonding - Google Patents
Wedge for wire bondingInfo
- Publication number
- JPH0744198B2 JPH0744198B2 JP61044962A JP4496286A JPH0744198B2 JP H0744198 B2 JPH0744198 B2 JP H0744198B2 JP 61044962 A JP61044962 A JP 61044962A JP 4496286 A JP4496286 A JP 4496286A JP H0744198 B2 JPH0744198 B2 JP H0744198B2
- Authority
- JP
- Japan
- Prior art keywords
- wedge
- thin film
- wire
- wire bonding
- hard thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78317—Shape of other portions
- H01L2224/78318—Shape of other portions inside the capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、LSIやICなどの半導体装置のワイヤボンディ
ングに使用するウェッジに関するものである。TECHNICAL FIELD The present invention relates to a wedge used for wire bonding of a semiconductor device such as an LSI or an IC.
半導体装置において、半導体チップの電極とパッケージ
のリード電極との接続には、金またはアルミニウムより
なる直径0.015〜0.1mm程度の細い導線を用いており、こ
の接続工程(ワイヤボンディング)には、キャピラリー
やウェッジが用いられている。このうちウェッジ1は、
第2図(a)(b)に示すように先端に設けた斜めの細
孔1aを通して導線を送出し、押圧部1bで該導線を圧着す
るようになっているもので、キャピラリーに比べ導線の
圧着部分を細くすることができるため、より高密度のワ
イヤボンディングに使用できるという利点があった。In the semiconductor device, a thin conductive wire made of gold or aluminum and having a diameter of about 0.015 to 0.1 mm is used to connect the electrode of the semiconductor chip and the lead electrode of the package, and a capillary or a wire is used for this connecting step (wire bonding). Wedges are used. Of these, wedge 1 is
As shown in FIGS. 2 (a) and 2 (b), the conductor is sent out through the oblique pore 1a provided at the tip, and the conductor is crimped by the pressing portion 1b. Since the crimping portion can be made thin, there is an advantage that it can be used for higher density wire bonding.
また、このウェッジ1は先端の押圧部1bが細く、セラミ
ックスでは折れやすいため、超硬により全体を形成して
おり、導線として主にコストの低いアルミ線を用いてい
た。Further, since the pressing portion 1b at the tip end of the wedge 1 is thin and the ceramic is easily broken, it is formed entirely by cemented carbide, and an aluminum wire mainly used at a low cost is used as a conductive wire.
ところが、超硬により形成したウェッジ1の場合、金属
の付着性が大きいため先端部に導線や電極の粉が付着し
やすく、この付着物が多くたまると細孔1aの穴詰まりや
導線切れ、ループ異常などの接続不良を起こしていた。However, in the case of the wedge 1 formed of carbide, since the metal has a large adhesive property, the powder of the conductor or electrode is likely to adhere to the tip portion. There was a connection failure such as an abnormality.
また、このウェッジ1は、最高1秒間に8回程度の高速
で導線を電極上に圧着する際に、電極面に打ちつけられ
るために、先端の押圧部1bに摩耗や折損などが生じやす
く、摩耗や折損などが激しいと、導線を確実に圧着する
ことができず、ワイヤーツブレ異常を起こしていた。In addition, since the wedge 1 is struck on the electrode surface when the conductor wire is crimped onto the electrode at a high speed of about 8 times per second, the pressing portion 1b at the tip is likely to be worn or broken. If the wire was severely broken or broken, the conductor wire could not be securely crimped, causing wire deviation.
これらの接続不良のため超硬よりなるウェッジ1は比較
的寿命の短いものであった。Due to these poor connections, the wedge 1 made of carbide has a relatively short life.
上記に鑑みて、本発明は超硬により形成したウェッジ基
体の少なくとも先端部の表面にTiC,TiN、ダイヤモンド
等よりなる硬質薄膜を被着してワイヤボンディング用ウ
ェッジを形成したものである。In view of the above, the present invention provides a wedge for wire bonding by depositing a hard thin film made of TiC, TiN, diamond or the like on the surface of at least the tip portion of a wedge base body made of cemented carbide.
本発明に係るウェッジ1は、超硬よりなり、第1図に先
端部分を示すように導線を送出する細孔1aおよび導線を
圧着する押圧部1bを備えており、表面に硬質薄膜2を被
着している。硬質薄膜2は細孔1aの内側面まで形成し、
滑らかな面となっているため、導線をスムーズに送出す
ることができ、またウェッジ1と導線との化学反応を防
止し、導線や電極粉の付着を防止することができる。The wedge 1 according to the present invention is made of a super hard material and is provided with pores 1a for sending out a conductor wire and a pressing portion 1b for crimping the conductor wire as shown in the tip portion of FIG. I'm wearing it. The hard thin film 2 is formed up to the inner surface of the pore 1a,
Since the surface is smooth, the conductor wire can be delivered smoothly, and the chemical reaction between the wedge 1 and the conductor wire can be prevented, so that the conductor wire and the electrode powder can be prevented from adhering.
また、硬質薄膜2を押圧部1b表面に被着してあることに
より押圧部1bの強度、殊に耐摩耗性を大きくすることが
できる。Further, since the hard thin film 2 is adhered to the surface of the pressing portion 1b, the strength of the pressing portion 1b, especially the wear resistance can be increased.
このようなウェッジ1の基体を炭化タングステン(WC)
により形成し、第1表に示すような種類の硬質薄膜を被
着して試作し、硬質薄膜を被着しないウェッジと共にワ
イヤボンディング試験を行った。それぞれのウェッジを
10個用意し、同一条件のもとに、アルミ線を用いてワイ
ヤボンディングを行い、ボンディング回数と導線の接続
状態との関係を調べた結果、それぞれの平均値は第1表
の通りであった。なおウェッジに被着した硬質薄膜の膜
厚は全て14μmとした。Such a wedge 1 substrate is made of tungsten carbide (WC)
And a hard thin film of the kind shown in Table 1 was applied for trial production, and a wire bonding test was performed with a wedge on which the hard thin film was not applied. Each wedge
Ten pieces were prepared, and under the same conditions, wire bonding was performed using aluminum wires, and the relationship between the number of times of bonding and the connection state of the conducting wire was examined. As a result, each average value was as shown in Table 1. . The thickness of the hard thin film deposited on the wedge was 14 μm.
第1表よりNo.1の硬質薄膜を被着しないウェッジは、30
万回程度のボンディングで先端部の摩耗や導線粉の付着
などのために接続不良が発生し、使用不要となった。ま
た、No.2のSiCを被着したウェッジやNo.3のSi3N4を被着
したウェッジは、硬質薄膜が剥離しやすく40万回程度で
寿命となり、さほど効果はなかった。 From Table 1, the number of wedges that do not adhere to No. 1 hard thin film is 30
After bonding about 10,000 times, the connection was defective due to wear of the tip and adhesion of conductive wire powder, and it became unnecessary to use. Further, the wedge coated with No. 2 SiC and the wedge coated with No. 3 Si 3 N 4 were hard to peel off the hard thin film and had a life of about 400,000 cycles, which was not so effective.
それに対しNo.4のダイヤモンドを被着したウェッジやN
o.5のTiNを被着したウェッジ、No.6のTiCを被着したウ
ェッジは、それぞれ60万回程度のボンディング後も先端
部の摩耗や導線粉の付着が少なく使用可能な状態を保っ
ていた。On the other hand, wedges and N coated with No. 4 diamond
The wedges coated with TiN of No. 5 and the wedges of No. 6 with TiC have been kept in a usable state with little wear of the tip and adhesion of conductive wire powder even after about 600,000 times of bonding. It was
以上の結果より、超硬よりなるウェッジ基体に被着する
硬質薄膜としてはダイヤモンド,TiN,TiC等が良く、中で
もTiCが最も接続状態が良好であった。From the above results, diamond, TiN, TiC, etc. were good as the hard thin film adhered to the wedge base made of cemented carbide, and among them, TiC had the best connection state.
上記実施例において、硬質薄膜の平均膜厚は14μmのも
のを用いたが、種々実験の結果平均膜厚が0.5μmより
小さいと、耐摩耗性、強度が弱く、一方膜厚を50μmよ
り厚くすると割れによる剥離が発生しやすくなるだけで
なく、細孔を小さくしてしまうという不都合があった。
即ち、ウェッジ基体の先端部に被着する硬質薄膜の平均
膜厚は0.5〜50μmが好適である。In the above examples, a hard thin film having an average film thickness of 14 μm was used. However, as a result of various experiments, if the average film thickness is less than 0.5 μm, wear resistance and strength are weak, and if the film thickness is more than 50 μm, Not only is peeling due to cracking more likely, but there is also the disadvantage that the pores are made smaller.
That is, the average thickness of the hard thin film deposited on the tip of the wedge base is preferably 0.5 to 50 μm.
このような硬質薄膜の被着方法はいろいろあるが、たと
えば、ダイヤモンドの薄膜を被着する場合は、プラズマ
中の活性分子、ラジカル、イオン、電子等を利用して、
基体にダイヤモンド層を沈積させるプラズマCVD法が適
している。この他、材質等の違いに応じてPVD法、イオ
ンプレーティング法、スパッタリング法などで薄膜を被
着してもよい。また、ウェッジの細孔はあらかじめ広く
形成しておき薄膜被着後研磨することによって適正な大
きさにすればよい。このようにプラズマCVD法などで硬
質薄膜を形成することにより結晶粒径が細かく、ボイド
のない滑らかな表面が得られるが、必要に応じて表面の
研磨を行えば、さらに滑らかな面を得ることができる。There are various methods of depositing such a hard thin film. For example, when depositing a diamond thin film, active molecules in plasma, radicals, ions, electrons, etc. are used.
The plasma CVD method of depositing a diamond layer on a substrate is suitable. In addition, a thin film may be deposited by PVD method, ion plating method, sputtering method or the like depending on the difference in material and the like. Further, the pores of the wedge may be formed wide in advance, and may be appropriately sized by polishing after depositing the thin film. By forming a hard thin film by the plasma CVD method in this way, a fine grain size and a smooth surface without voids can be obtained, but if the surface is polished as necessary, a smoother surface can be obtained. You can
叙上のように本発明によれば、超硬により形成したワイ
ヤボンディング用ウェッジの少なくとも先端部の表面に
硬質薄膜を被着したことにより、ウェッジ先端部の耐摩
耗性、硬度、耐蝕性が大きくなり欠けや折れの発生が少
なくなるだけでなく、細孔の内側面が滑らかになり摩擦
係数が低減して導線の送出がスムーズに行えるために、
接触不良が少なくなる。さらに、これらの硬質薄膜は熱
伝導率が高いため、ウェッジの放熱特性を良くし、また
導電性が高いため、静電気等による帯電を防止すること
ができるなど多くの特長を有したワイヤボンディング用
ウェッジを提供することができる。According to the present invention as described above, by attaching a hard thin film to the surface of at least the tip portion of the wire bonding wedge formed by cemented carbide, the wear resistance of the wedge tip portion, hardness, corrosion resistance is large. In addition to reducing the occurrence of cracks and breaks, the inner surface of the pores becomes smooth and the friction coefficient is reduced, so that the wire can be delivered smoothly.
Less contact failure. Furthermore, since these hard thin films have high thermal conductivity, they improve the heat dissipation properties of the wedge, and because they have high conductivity, they have many features such as being able to prevent electrostatic charge and other electrification. Can be provided.
第1図は本発明に係るワイヤボンディング用ウェッジの
先端部分を示す拡大断面図である。 第2図(a)(b)はそれぞれ従来のワイヤボンディン
グ用ウェッジを示しており、第2図(a)は側面図、第
2図(b)は第2図(a)におけるA部の拡大断面図で
ある。 1:ワイヤボンディング用ウェッジ 1a:細孔 1b:押圧部 2:硬質薄膜FIG. 1 is an enlarged sectional view showing a tip portion of a wire bonding wedge according to the present invention. 2 (a) and 2 (b) respectively show a conventional wire bonding wedge. FIG. 2 (a) is a side view, and FIG. 2 (b) is an enlarged view of part A in FIG. 2 (a). FIG. 1: Wedge for wire bonding 1a: Pore 1b: Pressing part 2: Hard thin film
Claims (1)
とも先端部の表面にTiC,TiN,ダイヤモンドなどより成る
硬質薄膜を被着したことを特徴とするワイヤボンディン
グ用ウェッジ。1. A wedge for wire bonding, characterized in that a hard thin film made of TiC, TiN, diamond or the like is deposited on the surface of at least the tip portion of a wedge base body formed by cemented carbide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61044962A JPH0744198B2 (en) | 1986-02-28 | 1986-02-28 | Wedge for wire bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61044962A JPH0744198B2 (en) | 1986-02-28 | 1986-02-28 | Wedge for wire bonding |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62202533A JPS62202533A (en) | 1987-09-07 |
JPH0744198B2 true JPH0744198B2 (en) | 1995-05-15 |
Family
ID=12706103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61044962A Expired - Lifetime JPH0744198B2 (en) | 1986-02-28 | 1986-02-28 | Wedge for wire bonding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0744198B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4540212B2 (en) * | 2000-10-24 | 2010-09-08 | 田中電子工業株式会社 | Rewinding guide for bonding wire and rewinding method using the same |
-
1986
- 1986-02-28 JP JP61044962A patent/JPH0744198B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62202533A (en) | 1987-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI461249B (en) | Wire saw and method for fabricating the same | |
EP0090657A2 (en) | A method of making abrasive bodies | |
KR100775454B1 (en) | Composite body, wafer supporting member using the same, and method for processing wafer | |
US20060258054A1 (en) | Method for producing free-standing carbon nanotube thermal pads | |
WO2008062602A1 (en) | Laminated electronic component and method for manufacturing the same | |
JP4175728B2 (en) | Resin bond super abrasive wire saw | |
JPH02288213A (en) | Thin film terminal of low inductance ceramic capacitor and its manufacture | |
JPH0744198B2 (en) | Wedge for wire bonding | |
JPS5822663A (en) | Electrodeposition type grinding stone and manufacture thereof | |
JP2003503852A (en) | Structural member and method of manufacturing the same | |
JPS62158335A (en) | Capillary for wire bonding | |
JP2001199775A (en) | Joined structure brazed with metal and wafer support member using the same | |
JP2002164425A (en) | Wafer support member | |
JP3685645B2 (en) | Manufacturing method of semiconductor device | |
JPH0989930A (en) | Contact for electronic equipment and its manufacture | |
US20230347442A1 (en) | Wire bonding tools, and related methods of providing the same | |
JP2001223237A (en) | Conductor connecting tool for wire bonding process in manufacturing process of semiconductor device | |
JPS61214454A (en) | Bonding wire for semiconductor device | |
JPH0576182B2 (en) | ||
JP2623640B2 (en) | Heat-resistant composite Ni-plated member | |
JP2003100795A (en) | Capillary for wire bonding | |
JP3516926B2 (en) | Wedge tool | |
JPH11111777A (en) | Bonding tool | |
JPH09134938A (en) | Bonding tool excellent in oxidation resistance | |
JPS61101481A (en) | Metallization of silicon carbide base ceramic sintered body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |