JPH0734924Y2 - イオン源 - Google Patents

イオン源

Info

Publication number
JPH0734924Y2
JPH0734924Y2 JP1986122512U JP12251286U JPH0734924Y2 JP H0734924 Y2 JPH0734924 Y2 JP H0734924Y2 JP 1986122512 U JP1986122512 U JP 1986122512U JP 12251286 U JP12251286 U JP 12251286U JP H0734924 Y2 JPH0734924 Y2 JP H0734924Y2
Authority
JP
Japan
Prior art keywords
ion beam
electrode
ion source
ion
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986122512U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6330350U (enrdf_load_html_response
Inventor
修一 野川
登 山原
克夫 松原
眞一 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP1986122512U priority Critical patent/JPH0734924Y2/ja
Publication of JPS6330350U publication Critical patent/JPS6330350U/ja
Application granted granted Critical
Publication of JPH0734924Y2 publication Critical patent/JPH0734924Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electron Sources, Ion Sources (AREA)
JP1986122512U 1986-08-09 1986-08-09 イオン源 Expired - Lifetime JPH0734924Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986122512U JPH0734924Y2 (ja) 1986-08-09 1986-08-09 イオン源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986122512U JPH0734924Y2 (ja) 1986-08-09 1986-08-09 イオン源

Publications (2)

Publication Number Publication Date
JPS6330350U JPS6330350U (enrdf_load_html_response) 1988-02-27
JPH0734924Y2 true JPH0734924Y2 (ja) 1995-08-09

Family

ID=31012767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986122512U Expired - Lifetime JPH0734924Y2 (ja) 1986-08-09 1986-08-09 イオン源

Country Status (1)

Country Link
JP (1) JPH0734924Y2 (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776424B2 (ja) * 1990-04-25 1995-08-16 株式会社日立製作所 イオンビームスパッタリング装置
CN117805565A (zh) * 2024-02-06 2024-04-02 西安交通大学 一种离子流诱发真空绝缘击穿实验装置及方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645600A (en) * 1979-09-19 1981-04-25 Hitachi Ltd Perforated ion source assembly* adjustment* and device therefor
JPS58108699A (ja) * 1981-12-21 1983-06-28 株式会社日立製作所 中性粒子入射装置用イオン源の電極組立方法

Also Published As

Publication number Publication date
JPS6330350U (enrdf_load_html_response) 1988-02-27

Similar Documents

Publication Publication Date Title
JP2008174777A (ja) 薄膜形成装置
WO1985001389A1 (en) Ion microbeam implanting apparatus
JPH0734924Y2 (ja) イオン源
US5019712A (en) Production of focused ion cluster beams
US4933057A (en) Apparatus and process for the deposition of a thin layer on a transparent substrate
WO2008136130A1 (ja) プラズマ発生装置およびこれを用いた成膜方法並びに成膜装置
JP2732539B2 (ja) 真空成膜装置
JP3079802B2 (ja) プラズマ銃
JPH0692638B2 (ja) 薄膜装置
JP4256142B2 (ja) イオン注入装置のプラズマ発生装置及びイオン注入装置
JPS6280264A (ja) イオンプレ−テイング装置
JPH0461072B2 (enrdf_load_html_response)
JPH0451438A (ja) 電子ビーム露光装置及び露光方法
JPS6276144A (ja) ビ−ムプラズマ型イオン銃
JPS61124568A (ja) イオンビ−ムスパツタ装置
JPH0244102B2 (enrdf_load_html_response)
JPS6254076A (ja) イオンプレ−テイング装置
JPH0776424B2 (ja) イオンビームスパッタリング装置
JPS6143899A (ja) スピ−カ用振動板
JPH05205681A (ja) イオン源装置
JPH0811823B2 (ja) イオンプレ−テイング装置
JPS6311560U (enrdf_load_html_response)
CN101075515A (zh) 高电流密度异形束电子源
JPS60238478A (ja) スパツタ装置用タ−ゲツト
JPS5844722A (ja) イオンビ−ムエツチング方法