JPH07335825A - Hybrid integrated circuit and its fabricating method - Google Patents

Abstract

PURPOSE:To protect peipheral chips and improve strength of a thick film substrate by surrounding, with an annular member, any one of a region including a thick film resistance for function trimming and a region including a changeover ship for adjusting electrical characteristic. CONSTITUTION:An O-ring 4 is bonded to a thick film substrate 1 in such a manner as to surround the region where a thick film resistor 3 is arranged. Since a chip 2 is protected by gel 5 at the time of executing the function trimming, it can be prevented that the chip 2 is touched directly with hand and cut fragments adhere to the chip 2 by the trimming. Moreover, since gel 5 is rather soft but has a thickness of several 100mum or more, the strength of thick film substrate 1 can be enhanced for a mechanical external force.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device and a method of manufacturing the same, and more particularly to a thick film resistor for function trimming and a replacement chip for adjusting electrical characteristics provided on a thick film substrate. The present invention relates to a hybrid integrated circuit device and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, in a hybrid integrated circuit device, function trimming is performed on a thick film resistor provided on a thick film substrate in order to absorb and adjust characteristic variations of mounted chip components. That is, the function trimming means that a thick film resistor is formed in advance so that the resistance value becomes smaller than the design value, and after mounting each chip component,
While monitoring the output characteristics of the entire circuit or a specified circuit part, remove a part of the thick film resistance by irradiating a laser beam, etc., and gradually increase the resistance value of the thick film resistance so that the above output characteristics become appropriate. It is a method of adjusting the resistance value of the thick film resistor.

As a function trimming method, a sand trimming method in which silicon powder is blown with compressed air is known in addition to the laser trimming method by irradiating a laser beam.

Further, the conventional function trimming method as described above is disclosed in, for example, JP-A-2-198164, JP-A-3-27861, and JP-A-5-949.
No. 05 and Japanese Utility Model Laid-Open No. 4-72650.

As a method of finally adjusting the electric characteristics of the hybrid integrated circuit device, the method of performing function trimming on the thick film resistor as described above is often adopted because of its relatively high mass productivity. ing. However, if the component to be adjusted is not a resistor, or if the resistor has a problem with the thick film resistor, the electrical characteristics may be adjusted by replacing the replacement chip.

[0006]

In the conventional hybrid integrated circuit device as described above, when function trimming is performed at the time of manufacture, chip components mounted around the thick film resistor on the thick film substrate are exposed. Since it remains as it is, the chip component may be directly touched during trimming work, and chips generated during trimming may scatter and adhere to the chip component, which adversely affects the operation of the circuit. there were. In addition, when the electrical characteristics are adjusted by replacing the replacement chip, there is almost the same problem as in the case where the function trimming is performed.

The present invention has been made to solve the above-mentioned problems, and it is possible to protect surrounding chips when performing function trimming or replacing a replacement chip. An object of the present invention is to obtain a hybrid integrated circuit device capable of improving reliability and a manufacturing method thereof.

[0008]

A hybrid integrated circuit device according to a first aspect of the present invention includes a thick film substrate, a chip mounted on the thick film substrate, and a region including a thick film resistor for function trimming. And an annular member provided on the thick film substrate so as to surround at least one of regions including a replacement chip for electrical characteristic adjustment, and provided on the outside of the annular member on the thick film substrate. It is equipped with a gel.

According to a second aspect of the present invention, there is provided a method of manufacturing a hybrid integrated circuit device, which comprises a step of providing an annular member on a thick film substrate so as to surround a region including a thick film resistor for function trimming, and a step on the thick film substrate. The method includes a step of covering the outside of the annular member with gel and a step of performing function trimming on the thick film resistance.

In the method for manufacturing the hybrid integrated circuit device according to the third aspect of the present invention, the gel is provided after the annular member is covered with the cap.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a hybrid integrated circuit device, wherein an annular member is covered with a cap after function trimming.

In the method of manufacturing the hybrid integrated circuit device according to the fifth aspect of the invention, the gel is provided inside the annular member after the function trimming.

In the method of manufacturing a hybrid integrated circuit device according to the sixth aspect of the present invention, an annular member having a tapered cross section is used, and after the function trimming, the opening end of the annular member is crushed to close the opening end. It is the one.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a hybrid integrated circuit device, comprising a step of providing an annular member on a thick film substrate so as to surround a region including a replacement chip for electrical characteristic adjustment, Covering the outside of the annular member on the membrane substrate with a gel,
And a step of replacing the replacement chip.

[0015]

According to the invention of claim 1, at least one of a region including a thick film resistor for function trimming and a region including a replacement chip for adjusting electrical characteristics is surrounded by an annular member, and the outside of the region is surrounded by the annular member. Covering the thick film substrate with gel protects the surrounding chips during function trimming and chip replacement, and improves the strength of the thick film substrate against mechanical external force.

According to the second aspect of the present invention, the thick film resistor for function trimming is surrounded by the annular member, and the outside thereof is covered with gel to protect the surrounding chips at the time of function trimming, and at the same time, to prevent mechanical external force. Improve the strength of the membrane substrate.

According to the third aspect of the present invention, by covering the annular member with the cap and then providing the gel, it is possible to prevent the gel from entering the inside of the annular member and preventing proper function trimming.

According to the fourth aspect of the present invention, by covering the annular member with a cap after the function trimming, the thick film resistance after the function trimming is protected,
Improve device reliability.

According to the fifth aspect of the present invention, by providing the gel inside the annular member after the function trimming, the thick film resistance after the function trimming is protected and the reliability of the device is improved.

In the invention of claim 6, the opening end of the annular member is crushed after the function trimming to close the opening end, thereby protecting the thick film resistance after the function trimming and improving the reliability of the device. Let

In the invention of claim 7, the chip for replacement is surrounded by an annular member, and the outside is covered with a gel to protect the surrounding chips at the time of chip replacement, and at the same time, thick film substrate against mechanical external force. Improve the strength of.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. Example 1. 1 is a plan view showing a hybrid integrated circuit device according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line II-II of FIG.

In the figure, various chips 2 for forming a hybrid integrated circuit (hybrid IC) are mounted on a thick film substrate 1. Further, on the thick film substrate 1, the thick film resistors 3 for function trimming are collectively provided in one region, and an O ring 4 as an annular member is bonded so as to surround the region. Thick film substrate 1
A gel 5 is applied to the outside of the upper O-ring 4.

The gel 5 has, for example, a viscosity of 400 to 1600 cP (25 ° C.) before curing and a specific gravity of 0.
95 to 1.00 (25 ° C), 125 ° C, penetration of 75 to 100 (50 cc, 25 ° C) after 2 hours heat curing (AST
A colorless transparent or white silicone gel having the property of MD-1403) can be used.

Next, a method of manufacturing the hybrid integrated circuit device according to the first embodiment will be described. First, the thick film substrate 1 is provided with a circuit pattern (not shown) and a thick film resistor 3. The thick film resistors 3 are arranged as close as possible in advance. On the surface of the thick film substrate 1, an overcoat (not shown) made of glass having a low melting point is applied except for the chip connection portion, in order to prevent electromigration between electrodes and wirings. A chip 2 such as an IC chip or a capacitor chip is mounted on such a chip connection portion on the thick film substrate 1 through a sequence of solder printing, chip placement and reflow.

After that, an O-ring 4 is bonded onto the thick film substrate 1 so as to surround the region where the thick film resistor 3 is arranged. Then, the gel 5 is applied on the thick film substrate 1 except for the inside of the O-ring 4. After the gel 5 is heated and hardened, function trimming is performed on the thick film resistor 3 in the O-ring 4. After this function trimming, a final characteristic inspection is performed through the steps of high temperature aging and temperature cycle, and the product is shipped. Gel 5
Does not adversely affect the hybrid IC even if it is applied.

In such a hybrid integrated circuit device, since the chip 2 is protected by the gel 5 when performing function trimming, the chip 2 may be directly touched or chips may be attached by trimming. To be prevented. Therefore, the electrical characteristics of the entire device are stable, and the reliability can be improved. Further, although the gel 5 is relatively soft, it has a thickness of several hundred μm or more, so that the strength of the thick film substrate 1 can be increased against mechanical external force.

Example 2. Next, FIG. 3 is a sectional view showing a main part of a hybrid integrated circuit device according to a second embodiment of the present invention.
In the figure, a cap 6 is put on the open end of the O-ring 4 bonded onto the thick film substrate 1.

In such a hybrid integrated circuit device, the gel 5 is applied after the O-ring 4 is covered with the cap 6. In the method of the first embodiment, the gel 5 may enter the inside of the O-ring 4 and accurate trimming may not be performed, but by using the cap 6 of the second embodiment, the gel 5 is applied at the time of application thereof. It can easily be prevented from entering the inside of the O-ring 4. When trimming, the cap 6
You can remove it.

Example 3. In the second embodiment,
After function trimming, cap 6 O-ring 4
It is possible to cover the thick film resistor 3 after trimming, and to protect the thick film resistor 3 after trimming. That is, if no protection measures are taken against the thick film resistor 3 after the function trimming, the periphery of the trimming mark, which is fragile due to the impact of the laser or the like, is peeled off, or the hand or another substrate is touched and scratched. There is a case where it is attached, but this can be prevented by providing the cap 6. For example, when a temperature cycle process, which is a screening process after function trimming, is performed, the resistance value does not change when the cap 6 is used, whereas the resistance value increases by several percent when the cap 6 is not used. There is.

Example 4. Although the O-ring 4 is covered with the cap 6 after the function trimming in the third embodiment, the gel 5 may be applied and filled in the O-ring 4 after the function trimming to protect the thick film resistor 3 after trimming. be able to.

Example 5. Fourth Embodiment FIG. 4 is a sectional view showing a main part of a hybrid integrated circuit device according to a fifth embodiment of the present invention. In the figure, an O-ring 7 as an annular member is bonded on the thick film substrate 1 so as to surround a region including the thick film resistor 3.
The O-ring 7 has a tapered cross section such that both the inner diameter and the outer diameter become smaller from the thick film substrate 1 side toward the opening end side. Other configurations are the same as those in the first embodiment.

In such a hybrid integrated circuit device, the gel 5 is applied to the outside of the O-ring 7 on the thick film substrate 1 as in the above-described embodiments, and then the thick film resistor 3 is function-trimmed. After the function trimming, the open end of the O-ring 7 is crushed by using a heated iron or the like to close the open end. As a result, the O-ring 7 itself can be used as a substitute for the cap 6 of the second embodiment, and the thick film resistor 3 after function trimming can be protected.

Example 6. FIG. 5 is a sectional view showing a main part of a hybrid integrated circuit device according to a sixth embodiment of the present invention. The sixth embodiment is an example of adjusting the electrical characteristics of the hybrid IC by replacing the replacement chip 8 instead of function trimming with respect to the thick film resistor.
An O-ring 4 is adhered so as to surround a region including the replacement chip 8 on the thick film substrate 1.

In such a hybrid integrated circuit device, after the gel 5 is applied to the outside of the O-ring 4 on the thick film substrate 1, the replacement chip 8 is replaced to adjust the electrical characteristics of the hybrid IC. . This makes it possible to protect other chips during chip replacement and improve reliability.

After that, it is possible to cover the O-ring 4 with a cap or fill the O-ring 4 with the gel 5. It is also possible to use the O-ring 7 as shown in FIG.

In each of the above embodiments, the annular member is O
Although the rings 4 and 7 are used, the annular member is not limited to the O-ring, and the cross-sectional shape, the planar shape, the material, and the like can be variously changed. For example, an annular member having a rectangular planar shape may be used.

The material of the gel 5 is not limited to the silicon gel shown in each of the above embodiments.

[0039]

As described above, in the hybrid integrated circuit device according to the invention of claim 1, at least the region including the thick film resistor for function trimming and the region including the replacement chip for adjusting the electrical characteristics. Since one of them is surrounded by an annular member and the thick film substrate on the outside is covered with gel, it is possible to protect surrounding chips during function trimming or chip replacement, and improve reliability. In addition to that, it is possible to improve the strength of the thick film substrate against mechanical external force.

In the method of manufacturing the hybrid integrated circuit device according to the second aspect of the present invention, the region including the thick film resistor for function trimming is surrounded by the annular member, and the outside thereof is covered with gel. At the same time, the surrounding chips can be protected, the reliability can be improved, and the strength of the thick film substrate against mechanical external force can be improved.

Further, in the method for manufacturing the hybrid integrated circuit device according to the third aspect of the invention, since the gel is provided after the annular member is covered with the cap, in addition to the same effect as that of the second aspect of the invention. The gel can be prevented from entering the inside of the annular member, and the function trimming can be more appropriately performed.

Furthermore, in the method of manufacturing the hybrid integrated circuit device according to the invention of claim 4, the annular member is covered with the cap after the function trimming. Therefore, in addition to the same effect as the invention of claim 2, The thick film resistor after trimming is protected, and the reliability of the device can be improved.

In the method of manufacturing the hybrid integrated circuit device according to the fifth aspect of the invention, since the gel is provided inside the annular member after the function trimming, in addition to the same effect as that of the second aspect of the invention, The thick film resistance after function trimming is protected, and the reliability of the device can be improved.

Further, in the method for manufacturing the hybrid integrated circuit device according to the invention of claim 6, after the function trimming, the opening end of the annular member having the tapered cross section is crushed to close the opening end. In addition to the same effect as the invention of Item 2, there is an effect that the thick film resistance after function trimming is protected and the reliability of the device can be improved.

Further, in the method of manufacturing a hybrid integrated circuit device according to the invention of claim 7, the area including the replacement chip is surrounded by the annular member, and the outside thereof is covered with the gel. The surrounding chips can be protected, the reliability can be improved, and the strength of the thick film substrate against mechanical external force can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a hybrid integrated circuit device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line II-II of FIG.

FIG. 3 is a sectional view showing a main part of a hybrid integrated circuit device according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing a main part of a hybrid integrated circuit device according to a fifth embodiment of the present invention.

FIG. 5 is a sectional view showing a main part of a hybrid integrated circuit device according to a sixth embodiment of the present invention.

[Explanation of symbols]

1 thick film substrate, 2 chips, 3 thick film resistors, 4, 7 O
Ring (annular member), 5 gels, 6 caps, 8 replacement tips.

Claims (7)

[Claims] 1. A thick film substrate, a chip mounted on the thick film substrate, and a region including a thick film resistor for function trimming and a region including a replacement chip for adjusting electrical characteristics. A hybrid integrated device comprising: an annular member provided on the thick film substrate so as to surround one of the two, and a gel provided outside the annular member on the thick film substrate. Circuit device. 2. A step of providing an annular member on the thick film substrate so as to surround a region including a thick film resistor for function trimming, a step of covering the outside of the annular member on the thick film substrate with a gel, And a step of performing function trimming on the thick film resistor, the method of manufacturing a hybrid integrated circuit device. 3. The method for manufacturing a hybrid integrated circuit device according to claim 2, wherein the gel is provided after the annular member is covered with the cap. 4. The method of manufacturing a hybrid integrated circuit device according to claim 2, wherein the annular member is covered with a cap after the function trimming. 5. The method of manufacturing a hybrid integrated circuit device according to claim 2, wherein the gel is provided inside the annular member after the function trimming. 6. The method according to claim 2, wherein an annular member having a tapered cross section is used, and the opening end is closed by crushing the opening end of the annular member after function trimming. For manufacturing a hybrid integrated circuit device. 7. A step of providing an annular member on the thick film substrate so as to surround a region including a replacement chip for electrical characteristic adjustment, and a gel covering the outside of the annular member on the thick film substrate. A method of manufacturing a hybrid integrated circuit device, comprising: a step; and a step of replacing the replacement chip.