JPH07331422A - Laser abrasion device - Google Patents

Abstract

PURPOSE:To form a high-quality thin film having two-dimensionally uniform various characteristics over the whole area of the thin film surface at a high rate with high efficiency, to simultaneously deposit the thin films of >=2 kinds of compositions on a substrate and to optionally control the compositional ratio in the thickness direction of the thin film. CONSTITUTION:Two target holders 11 and 12 and a substrate holder 3 are arranged in an irradiation chamber 1. Targets 13 and 14 are held on the holders 11 and 12 and a substrate 5 on the holder 3. A laser beam 8 from a laser oscillator 7 is split into two laser beams 8a and 8b by a beam splitter 15. The two laser beams 8a and 8b are passed through different laser beam incident windows 10a and 10b and introduced into the chamber 1 from different directions to irradiate the targets 13 and 14, respectively.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser ablation device for forming thin films of oxide superconductors, ferroelectrics, semiconductors and the like.

[0002]

2. Description of the Related Art Conventionally, as a thin film forming method for forming a thin film on a substrate, there are a CVD (chemical vapor deposition) method, a sputtering method, a laser ablation method and the like. Among them, the laser ablation method is a method that has been rapidly attracting attention and is being actively developed in recent years as a method for forming an oxide high temperature superconducting thin film for the purpose of manufacturing a microelectronic device.

The laser ablation method irradiates a solid material (target) with a pulsed laser beam having a high energy density, and a plume in a plasma state generated by explosive separation (application) of the surface area on the solid surface at this time. Is used to deposit the same constituent elements as the target on the substrate as a thin film. The merit of this method is that a high quality thin film can be formed with good reproducibility, the process temperature is low, and the structure of the thin film forming apparatus is relatively simple. In addition, since a very high energy of up to several 100 MW / cm ³ is instantaneously injected into the solid surface, a method suitable for forming a thin film for high melting point materials such as boron nitride (BN) and other ceramics is used. is there.

A laser ablation device having such characteristics has conventionally been constructed as shown in FIG.
First, as shown in FIG. 4, in the irradiation chamber 1,
A target holder 2 and a substrate holder 3 are arranged, a target 4 is held in the target holder 2,
The substrate 5 is held on the substrate holder 3. in this case,
The target holder 2 and the substrate holder 3 are holder portions 2 for holding the target 4 and the substrate 5, respectively, on their surfaces.
a, 3a and the holder portions 2a, 3a are attached to the irradiation chamber 1
Support columns 2b and 3b for supporting the support columns 2b and 3b. The support columns 2b and 3b are provided so as to extend in the orthogonal direction from the back surfaces of the holder portions 2a and 3a, respectively. The target holder 2 and the substrate holder 3 are arranged such that the holder portions 2a and 3a are opposed to each other and the support columns 2b and 3b are arranged substantially linearly.

Further, the irradiation chamber 1 is provided with a vacuum exhaust device 6
Has reached or is maintained at a predetermined pressure. Then, the laser beam 8 from the pulse laser oscillator 7 is introduced into the irradiation chamber 1. That is, the laser light 8 from the pulse laser oscillator 7 enters the irradiation chamber 1 through the lens 9 arranged between the pulse laser oscillator 7 and the irradiation chamber 1 and the laser entrance window 10 provided in the irradiation chamber 1. It is introduced and focused on the target 4 on the target holder 2.
It is supposed to be irradiated. In this case, the laser incident window 10 is made of a material that transmits the laser light 8.

In forming a thin film on the substrate 5 in such a laser ablation apparatus, first, a laser beam 8 is emitted from the pulse laser oscillator 7, and the laser beam 8 is incident on the lens 9 and the laser. The light is focused and irradiated on the target 4 through the window 10. At this time, from the surface of the target 4 irradiated with the laser light 8, fragments of atoms, molecules, ions, etc. that compose the target 4 are explosively emitted. Then, these fragments expand anisotropically toward the front of the target 4,
The substrate 5 on the substrate holder 3 is reached and deposited. As a result, a thin film having the same chemical composition as the constituent elements of the target 4 is formed on the substrate 5.

[0007]

However, the conventional laser ablation apparatus having the above structure has the following problems.

First, the apparatus of FIG. 4 has a drawback that only a thin film having one kind of chemical composition or composition ratio can be formed, and the kind of thin film to be formed cannot be changed. In order to improve this point, a method has been proposed in which two or more types of targets are installed in one target holder and the target holder is moved to switch the targets to be irradiated with laser light to change the type of thin film to be formed. ing.

However, even if this method is used, for example, when two kinds of substances A and B are used as targets and laser light is irradiated in the order of A → B,
A thin film of a substance B is simply formed on a substrate by a thin film of a substance A. Therefore, it is not possible to meet the demand for continuously changing the chemical composition from A to B, or mixing the compositions of A and B at an arbitrary ratio.

Further, as a general problem of the conventional laser ablation apparatus, the thickness, particle size, density and other properties required for the film are two-dimensionally uniform over the entire surface of the thin film. It is difficult to obtain a high quality thin film. Therefore, conventionally, a method of rotating the substrate holder to make the film quality uniform has been used. However, in this method, since only a small part of the fragments in the ablation plume reach the substrate, there are disadvantages such as large ablation plume loss, poor film formation efficiency, and slow film formation rate.

As described above, in the conventional laser ablation apparatus, only a thin film having the same composition as the target can be obtained, and the kinds and ratios of the elements constituting the thin film and the composition distribution in the thickness direction can be arbitrarily controlled. It is impossible to do. In addition, it is difficult to obtain two-dimensional uniformity of thin film characteristics at high speed and with high efficiency.

The present invention has been proposed in order to solve the above problems of the prior art, and its purpose is to:
It is possible to form a high-quality thin film with various two-dimensionally uniform film properties over the entire surface of the thin film at high speed and with high efficiency, and at the same time, deposit thin films of two or more types of composition on the substrate. It is an object of the present invention to provide an excellent laser ablation device that can easily form a thin film of a new material that has never existed before by controlling the composition ratio of the thin film in the thickness direction.

[0013]

A laser ablation apparatus according to the present invention comprises an irradiation chamber in which a target irradiated with laser light and a substrate on which particles scattered from the target are deposited are arranged, and one pulse laser. In a laser ablation device including an oscillator and introducing laser light from the laser oscillator into the irradiation chamber,
It has the following features.

According to a first aspect of the present invention, a plurality of targets are arranged in the irradiation chamber, and the unidirectional laser light emitted from the pulse laser oscillator is divided into the same number of multidirectional laser beams as the targets. It is characterized by the provision of. Then, the optical system is configured to irradiate each target with each of the divided laser beams individually and simultaneously.

The inventions according to claims 2 and 3 are defined by claim 1.
In addition to the configuration of the invention of 1, the optical system further has the following features. That is, according to the second and third aspects of the invention, a variable beam splitter capable of continuously changing the transmittance and the reflectance of the laser light is used as the optical system. Further, in the invention according to claim 3, the beam splitter is configured such that changes in its transmittance and reflectance are synchronized with the laser oscillation operation of the pulse laser oscillator and controlled by a function of the number of laser shots. To be done.

In addition to the configuration of the invention of claim 1, the plurality of targets further have the following features. First, in the invention of claim 4, all of the plurality of targets are made of substances having the same chemical composition. In the invention according to claim 5, at least one of the plurality of targets is made of a substance having a chemical composition different from that of the other targets. Further, in the invention according to claim 6, at least one of the plurality of targets is at least one of the elements constituting the material of the substrate.
Composed of substances containing different types of elements.

The invention described in claims 7 and 8 is defined by claim 1.
In addition to the configuration of the invention of 1, the pulse laser oscillator has the following features. First, in the invention according to claim 7, an excimer laser oscillator is used as the pulse laser oscillator. Further, in the invention according to claim 8, the pulse laser oscillator is configured to emit laser light having a laser output per pulse of energy of 0.5 J or more.

According to a ninth aspect of the invention, in addition to the configuration of the first aspect of the invention, the irradiation chamber has the following features. That is, the irradiation chamber is equipped with an evacuation device, and the evacuation device maintains a vacuum degree of 10 ^-6 Torr or more.

[0019]

According to the laser ablation device of the present invention having the above construction, the following actions can be obtained.

According to the first aspect of the present invention, the ablated particles are simultaneously scattered from the plurality of targets by irradiating each of the plurality of targets with the laser beams in multiple directions divided by the optical system individually and simultaneously. Then, the simultaneously scattered ablation particles can be simultaneously deposited on the same substrate. In this case, since the ablation particles fly simultaneously on one substrate from different directions, the ablation particles can be uniformly deposited on the substrate.

In the second aspect of the invention, the ratio of the ablated particles scattered from each target can be easily changed by continuously changing the transmittance and the reflectance of the beam splitter. According to the third aspect of the invention, the change of the transmittance and the reflectance of the beam splitter can be optimally adjusted by interlocking the beam splitter with the pulse oscillator.

According to the fourth aspect of the present invention, the same ablation particles fly simultaneously from a plurality of different directions on one substrate, so that the same ablation particles can be uniformly deposited on the substrate.

In the invention of claim 5, a plurality of types of ablation particles are simultaneously jetted onto one substrate from a plurality of different directions. Therefore, a plurality of types of ablation particles are simultaneously and uniformly deposited on the substrate. You can In particular, when the invention of claim 5 is combined with the invention of claim 2, the material mixture ratio of the deposited layer on the substrate can be arbitrarily changed.

In the invention of claim 6, since the substance containing the element constituting the material of the substrate can be deposited, it is possible to form a thin film having a composition which is the same as or related to the composition of the substrate. . In particular, this claim 6
When the invention of 1 is combined with the inventions of claims 2 and 5, the composition ratio thereof gradually changes in the thickness direction,
On the surface of the substrate, it is possible to form a thin film having a gradient composition so as to have the same composition as the substrate.

According to the invention of claim 7, by using the excimer laser, the ablation of the target can be efficiently performed by the high energy in the ultraviolet region. Further, in the invention of claim 8, 0.5J
By emitting a laser beam having the above energy, even if this laser beam is divided into a plurality of laser beams, the output of each laser beam can be made sufficiently high.

In the ninth aspect of the present invention, the vacuum degree of the irradiation chamber is maintained at a vacuum degree of 10 ^-6 Torr or more by the vacuum exhaust device, so that the laser beam for irradiation can be efficiently used without lowering the energy. Up,
Since there is no possibility of foreign matter being mixed in, a high quality thin film can be efficiently formed.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the laser ablation device according to the present invention will be specifically described below with reference to FIGS. The same members as those in the conventional example shown in FIG. 4 are designated by the same reference numerals.

[1] Configuration of Embodiment First, FIG. 1 is a diagram showing an outline of an apparatus of this embodiment.
As shown in FIG. 1, in the irradiation chamber 1, the first,
The second target holders 11 and 12 and the substrate holder 3 are arranged, and the first and second target holders 11 and 12 are arranged.
The first and second targets 13 and 14 are respectively held on the substrate 12, and the substrate 5 is held on the substrate holder 3.
In this case, the two target holders 11 and 12 and the substrate holder 3 have holder portions 11a, 12a and 3a, respectively.
And column parts 11b, 12b, 3b for supporting the holder parts 11a, 12a, 3a with respect to the irradiation chamber 1, and each column part 11b, 12b, 3b is provided with each holder part 11a, 12a, 3a. Are provided so as to extend in the orthogonal direction from the back surface of each. Then, the two target holders 11 and 12 have respective holder portions 11a and 12
a are close to each other at an obtuse angle,
1b and 12b are arranged so as to form an acute angle with each other. Further, the substrate holder 3 has its holder portion 3a facing them at a position equidistant from both the holder portions 11a and 12a of the target holders 11 and 12, and the column portion 3b thereof has two target holders 11 and 12. Are arranged so as to be located on a straight line passing between the column portions 11b and 12b.

Further, the irradiation chamber 1 is provided with a vacuum exhaust device 6
Therefore, the degree of vacuum is maintained at 10 ^-6 Torr or more. Then, in the irradiation chamber 1, a pulse laser oscillator 7
The laser light 8 from is introduced. In this case, in the conventional example of FIG. 4, the laser beam 8 from the laser oscillator 7 was directly introduced into the irradiation chamber 1, but in the present example, the laser beam 8 from the laser oscillator 7 is converted into the beam splitter 15. With two laser beams 8a,
8b, and these two laser beams 8a and 8b are introduced into the irradiation chamber 1 from different directions through different laser entrance windows 10a and 10b.

That is, the beam splitter 15 is arranged at an angle of 45 degrees on the optical axis of the laser beam 8 from the laser oscillator 7, and the laser beam 8 from the laser oscillator 7 is arranged.
Is divided into a laser beam (transmitted light) 8a in the same direction and a laser beam (reflected light) 8b whose direction is changed by 90 degrees. A lens 9a and a laser entrance window 10a are linearly arranged between the beam splitter 15 and the holder portion 11a of the first target holder 11 in the irradiation chamber 1 so that the optical axes thereof coincide with each other. It is arranged. Then, the laser beam 8a transmitted from the beam splitter 15 is focused and irradiated onto the first target 13 on the first target holder 11 via the lens 9a and the laser entrance window 10a. There is.

The beam splitter 15 and the holder portion 12 of the other target holder 12 in the irradiation chamber 1 are also included.
The first and second mirrors 16 and 17, the lens 9b, and the laser entrance window 10b are sequentially arranged between a and a. In this case, the first mirror 16 is arranged at an angle of 45 degrees on the optical axis of the laser beam 8b from the beam splitter 15, and changes the direction of the laser beam 8b from the beam splitter 15 by 90 degrees. The laser beam 8 is reflected in the same direction as the laser beam 8 is emitted from the laser oscillator 7. Then, the second mirror 17 is
Is arranged at an angle of 45 degrees on the optical axis of the laser beam 8b reflected from the mirror 16 of the first mirror 16, and the laser beam 8b from the first mirror 16 is redirected by 90 degrees to output from the beam splitter 15. It is configured to reflect the laser beam 8b in the opposite direction to the reflection direction. Further, a lens 9 is provided between the second mirror 17 and the holder portion 12a of the other target holder 12 in the irradiation chamber 1.
b and the laser incident window 10b are linearly arranged so that their optical axes coincide with each other. That is, the second mirror 1
The laser beam 8b reflected from the second target holder 1 passes through the lens 9b and the laser incident window 10b.
The second target 14 above 2 is focused and irradiated. Then, in this way, the second target 14
The laser beam 8b irradiated on the upper side is orthogonal to the direction of the laser beam 8a irradiated on the first target 13.

In the present embodiment, as the pulse laser oscillator 7, an excimer laser which is a high energy source in the ultraviolet region is used. The pulse laser oscillator 7 has a laser output of 0.5 J per pulse.
It is configured to emit laser light having the above energy. Further, the beam splitter 15 is configured so that the transmittance and the reflectance can be continuously changed. Furthermore, this beam splitter 15
Are configured so that they can be electrically connected to the pulse laser oscillator 7. When electrically connected to the pulse laser oscillator 7 in this way, changes in the transmittance and reflectance of the beam splitter 15 are synchronized with the laser oscillation operation (pulse operation) of the pulse laser oscillator 7, In addition, it is controlled by a function of the number of laser shots. In addition, the laser incident windows 10a and 10b are
It is made of a material that transmits the laser beams 8a and 8b.

[2] Operation and Effect of the Embodiment The process and the operation and effect when a thin film is actually formed by the laser ablation apparatus of the present embodiment having the above-mentioned structure will be described below.

[2-1] Process of Forming Thin Film Having Constant Chemical Composition In the following, as an example of forming a thin film having a constant chemical composition on a substrate, a chemical composition of Si ₃ N ₄ is formed on a SiC substrate. FIG. 2 shows a process for forming a thin film
This will be described with reference to (A) and (B).

First, the first and second targets 1 and 2 are attached to the first and second target holders 11 and 12 in the irradiation chamber 1.
Set 3 and 14, respectively. In this case, the first and second
The targets 13 and 14, of the same the Si ₃ N ₄ sintered pellet having identical chemical composition Si ₃ N
_{4 Use} target. In addition, the substrate holder 3 has an S
The iC substrate 5 is arranged. After that, the pressure inside the irradiation chamber 1 is reduced by the vacuum exhaust device 6. In this case, the degree of vacuum achievement is set to 10 ⁻⁶ Torr or more.

When the irradiation chamber 1 reaches a predetermined vacuum degree, a laser beam 8 is emitted from the pulse laser oscillator 7 and split into two laser beams 8a and 8b by a beam splitter 15. Of these, one of the laser beams 8a passes through the lens 9a and the laser entrance window 10a, and the first Si ₃ N ₄ on the first target holder 11 is passed.
Focus and irradiate on the target 13. The other laser beam 8b is sequentially redirected by the first and second mirrors 16 and 17, and then passes through the lens 9b and the laser entrance window 10b to the second laser beam 8b on the second target holder 12.
The Si ₃ N ₄ target 14 is focused and irradiated.

In this case, the transmittance and the reflectance of the beam splitter 15 are such that the laser energy per unit area on the targets 13 and 14, that is, the fluences of the two laser beams 8a and 8b are equalized. Select and fix considering the energy loss in. Therefore, the targets 13 and 14 are irradiated with the laser beams 8a and 8b having the same fluence.

In this way, the targets 13, 1 irradiated with the laser beams 8a, 8b of equal fluence.
From the surface of No. 4, as shown in FIG.
Atoms, molecules, ions, clusters, and the like that form ₃ N ₄ are explosively emitted as a plasma plume 21.
These fragments anisotropically expand toward the front of the targets 13 and 14, reach the SiC substrate 5 on the substrate holder 3, and form a thin film of Si ₃ N ₄ on the SiC substrate 5.

At this time, the plasma plume 21 having the same component and the same particle density is simultaneously generated from the two targets 13 and 14, and the substrate 5 as shown in FIG.
It arrives from two directions at the same time. Therefore, this substrate 5
A Si ₃ N ₄ film 22 having a uniform film thickness distribution as shown in FIG. In this case, needless to say, not only the film thickness but also various physical, electromagnetic, mechanical, and chemical properties required can be obtained.

Further, when a thin film is formed by using the conventional apparatus as shown in FIG. 4, there is a problem that the film forming efficiency is poor and the film forming speed is slow because the loss of the plasma plume is large. However, in the present embodiment, since the fragments in the plasma plume can be effectively used, the film formation efficiency and the film formation speed do not decrease. It can be formed with efficiency.

Further, in the present embodiment, since a plurality of targets can be simultaneously irradiated with the laser beam using only one pulse laser oscillator, the system is simple and the running cost is suppressed. There is an advantage.

[2-2] Process of Forming Thin Film Having Gradient Chemical Composition Hereinafter, as an example of forming a thin film having a gradient chemical composition on a substrate, an inclination of Si ₃ N ₄ is formed on a SiC substrate. A process for forming a thin film having a composition will be described with reference to FIG.

First, the first target 13 in the irradiation chamber 1 is set with a SiC target made of SiC sintered pellets as the first target 13, and the second target holder 12 is set with the second target. 14 is Si composed of Si ₃ N ₄ sintered pellets
₃ N ₄ Set target. Further, the SiC substrate 5 is arranged on the substrate holder 3. After that, the pressure inside the irradiation chamber 1 is lowered by the vacuum exhaust device 6 so that the degree of vacuum achievement is 10 ⁻⁶ Torr or more.

When the irradiation chamber 1 reaches a predetermined vacuum degree, a laser beam 8 is emitted from the pulse laser oscillator 7 and is split by a beam splitter 15 into two laser beams 8a and 8b. These two laser beams 8
a and 8b are similar to those in the above-described process example, and pass through the individual optical paths to pass the first and second targets 1 in the irradiation chamber 1.
Focus and irradiate on 3 and 14.

In this case, the transmittance and reflectance of the beam splitter 15 are measured immediately after the start of ablation, that is, immediately after the pulse laser oscillator 7 starts the laser oscillation operation.
The transmittance is set to 100% and the reflectance is set to 0%. Therefore, at this point, the pulse laser oscillator 7
The laser light 8 from the above is focused and irradiated on the SiC target 13 without irradiating the Si ₃ N ₄ target 14 at all, and the atoms, molecules, ions
Clusters etc. become plasma plumes and are explosively released. These fragments are anisotropically expanded toward the front of the target 13 and the Si on the substrate holder 3 is expanded.
Reaching the C substrate 5, a thin film of SiC having the same composition as this substrate is formed on the SiC substrate 5.

In this process, the pulse laser oscillator 7 and the beam splitter 15 are electrically connected, and the transmittance and reflectance of the beam splitter 15 are linked with the pulse operation of the pulse laser oscillator 7. Control so that it changes continuously. In this case, specifically, control is performed so that the transmittance of the beam splitter 15 decreases and the reflectance increases as the number of laser shots emitted from the pulse laser oscillator 7 increases. By this control, the laser fluence to the SiC target 13 is gradually decreased, and at the same time, the laser irradiation to the Si ₃ N ₄ target 14 is started, and the laser fluence is gradually increased. Accordingly, Si ₃ on the SiC substrate 5
As the amount of N ₄ deposited decreases, the deposition of Si ₃ N ₄ begins.

As a result of controlling the beam splitter 15 as described above, the amount of SiC deposited on the substrate 5 gradually decreases, while the proportion of Si ₃ N ₄ increases, and finally the beam splitter 15 The reflectance of 15 becomes 100%, and only Si ₃ N ₄ reaches the substrate 5. When the change in the chemical composition of the deposited layer thus formed on the SiC substrate was examined, the distribution as shown in FIG. 3 was obtained. In FIG. 3, the horizontal axis represents the distance from the surface of the deposited layer in the thickness direction, and the vertical axis represents the abundance ratio of Si—N bond and Si—C bond measured by XPS (X-ray photoelectron spectroscopy).
From this FIG. 3, it can be seen that the outermost layer of the deposited layer on the SiC substrate has Si
Only the -N bond appears, and the proportion thereof gradually decreases toward the inside, while the Si-C bond increases and finally becomes the same component as the substrate, that is, a so-called graded composition is formed. Recognize.

[3] Other Embodiments The present invention is not limited to the above-described embodiment, and various other modified examples can be implemented. For example, the materials forming the target and the substrate may all be different types of materials, or one of the elements forming the substrate may be common to the target. Also, the beam
It is also possible to keep the transmittance and the reflectance of the splitter at constant values, and to always fix the mixing ratio of each target made of different materials to a constant ratio.

In the present invention, a new material which cannot be obtained by the conventional method can be easily produced by arbitrarily selecting the kind of the target and the transmittance and reflectance of the beam splitter as described above. It becomes possible to do.

On the other hand, although two targets are used in the above embodiment, a configuration using three or more targets is also possible. In that case, three laser beams from the laser oscillator are used. Divide into the above laser beams. The optical system for splitting the laser light and the specific configuration of the optical path of the split laser beam can be freely designed. Further, the laser oscillator to be used and the use conditions thereof can be freely selected.

[0051]

As described above, according to the laser ablation apparatus of the present invention, a plurality of targets are arranged in the irradiation chamber, and one direction of laser light emitted from the laser oscillator is equal in number to the targets. By arranging the laser beams in different directions and irradiating each laser beam to each target individually and simultaneously, various film characteristics are two-dimensionally uniform over the entire thin film surface. High-quality thin films can be formed at high speed and high efficiency. In addition, thin films of two or more types of composition can be deposited on the substrate at the same time, and the composition ratio in the thickness direction of the thin film can be arbitrarily controlled. It is possible to easily form a thin film of a new material that does not exist.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of a laser ablation device according to the present invention.

2A and 2B are diagrams showing a process for forming a thin film by the apparatus of FIG. 1, in which FIG. 2A is a schematic diagram showing a state of a plasma plume reaching the substrate, and FIG. 2B is a film thickness distribution on the substrate. Distribution map.

3 is a graph showing the distribution of chemical bond abundance ratio in the thickness direction when a thin film having a graded composition is formed by the apparatus of FIG.

FIG. 4 is a schematic configuration diagram showing an example of a conventional laser ablation device.

[Explanation of symbols]

1 ... Irradiation chamber 2, 11, 12 ... Target holder 3 ... Substrate holder 4, 13, 14 ... Target 5 ... Substrate 6 ... Vacuum exhaust device 7 ... Pulse laser oscillator 8 ... Laser light 9, 9a, 9b ... Lens 10, 10a , 10b ... Laser incident window 15 ... Beam splitter 16, 17 ... Mirror 21 ... Plasma plume 22 ... Si ₃ N ₄ film

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display location B23K 26/00 N 26/06 C Z 26/12 H01S 3/225 // H01L 21/203 M 9545 -4M

Claims (9)

[Claims] 1. An irradiation chamber in which a target irradiated with laser light and a substrate for depositing particles scattered from the target are arranged, and one pulse laser oscillator, the laser light from the laser oscillator is provided. In the laser ablation device to be introduced into the irradiation chamber, a plurality of targets are arranged in the irradiation chamber, and laser light in one direction emitted from the pulsed laser oscillator is emitted in the same number of laser beams as the targets. A laser ablation device characterized in that an optical system for splitting is provided, and the optical system is configured to irradiate each of the split laser beams to each target individually and simultaneously. 2. The variable optical beam system capable of continuously changing the transmittance and reflectance of laser light.
The laser ablation device according to claim 1, which is a splitter. 3. The beam splitter is configured such that changes in its transmittance and reflectance are synchronized with the laser oscillation operation of the pulse laser oscillator and controlled by a function of the number of laser shots. The laser ablation device according to claim 2, wherein 4. The laser ablation apparatus according to claim 1, wherein the plurality of targets in the irradiation chamber are made of materials having the same chemical composition. 5. The laser ablation according to claim 1, wherein at least one of the plurality of targets in the irradiation chamber is made of a substance having a chemical composition different from that of the other targets. apparatus. 6. The at least one of the plurality of targets in the irradiation chamber is made of a substance containing at least one kind of an element constituting a material of the substrate. Item 2. A laser ablation device according to item 1. 7. The laser ablation apparatus according to claim 1, wherein the pulse laser oscillator is an excimer laser oscillator. 8. The laser ablation device according to claim 1, wherein the pulsed laser oscillator is configured to emit a laser beam having a laser output of 0.5 J or more per pulse. . 9. The laser ablation apparatus according to claim 1, wherein the irradiation chamber is provided with a vacuum exhaust device, and is maintained at a vacuum degree of 10 ⁻⁶ Torr or higher by the vacuum exhaust device.