JPH07331180A - Paste for forming thin film pattern - Google Patents

Paste for forming thin film pattern

Info

Publication number
JPH07331180A
JPH07331180A JP12930794A JP12930794A JPH07331180A JP H07331180 A JPH07331180 A JP H07331180A JP 12930794 A JP12930794 A JP 12930794A JP 12930794 A JP12930794 A JP 12930794A JP H07331180 A JPH07331180 A JP H07331180A
Authority
JP
Japan
Prior art keywords
water
paste
film
weight
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12930794A
Other languages
Japanese (ja)
Other versions
JP3279435B2 (en
Inventor
Yumiko Aoki
由美子 青木
Satoshi Takeda
諭司 竹田
Mineo Nakayama
峰雄 中山
Naoki Taneda
直樹 種田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP12930794A priority Critical patent/JP3279435B2/en
Priority to PCT/JP1994/001938 priority patent/WO1995034608A1/en
Publication of JPH07331180A publication Critical patent/JPH07331180A/en
Application granted granted Critical
Publication of JP3279435B2 publication Critical patent/JP3279435B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2453Coating containing SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075Cleaning of glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/211SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/213SiO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/152Deposition methods from the vapour phase by cvd
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • C03C2218/328Partly or completely removing a coating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

PURPOSE:To obtain a paste which can form a thin film which can be released from the support by washing with water, is excellent in releasability, capable of patterning and proof against contamination with gas and, when released, leaves the support without surface cloudiness and spiking by mixing a water-soluble inorganic salt with a thickener comprising a water-soluble polymer, a filler having a specified mean particle diameter, an alcoholic organic solvent and water. CONSTITUTION:This paste is prepared by mixing 3-15wt.% water-soluble inorganic salt (e.g. sodium tripolyphosphate) with 0.5-6wt.% thickener comprising a water-soluble polymer (e.g. sodium alginate), 0.1-10wt.% filler having a mean particle diameter of 0.1-2mum (e.g. CeO2 as an inorganic filler or polyvinyl chloride as an organic filler), 1-20wt.% alcoholic organic solvent (e.g. ethanol) and 50-95wt.% water. Unlike a conventional paste, this paste forms a dense filled film having a thickness of about 1-2mum when applied to a support, dried and fired.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、リフトオフ法に用いら
れる水溶性のペーストに関する。
FIELD OF THE INVENTION The present invention relates to a water-soluble paste used in a lift-off method.

【0002】[0002]

【従来の技術】薄膜にパターンを形成する方法として
は、基体に無機微粒子を主成分とするパターン状の遮蔽
物を形成(マスキング)した後、適当な手段により薄膜
を形成し、その後に遮蔽物上の薄膜を遮蔽物とともに物
理的または化学的手段により取り除くリフトオフ法が工
業上有用な方法として知られている。
2. Description of the Related Art As a method for forming a pattern on a thin film, after forming (masking) a pattern-shaped shield containing inorganic fine particles as a main component on a substrate, a thin film is formed by an appropriate means, and then the shield is formed. The lift-off method of removing the upper thin film together with the shield by physical or chemical means is known as an industrially useful method.

【0003】特開昭49−113573号公報では、酸
化マグネシウム、酸化アルミニウム等の粉末を、また、
特公昭61−43806号公報では、炭酸カルシウム単
独またはこれと黒鉛との混合物を遮蔽物として用いるこ
とが提案されている。
In Japanese Patent Laid-Open No. 49-113573, powders of magnesium oxide, aluminum oxide, etc. are also disclosed.
Japanese Examined Patent Publication No. 61-43806 proposes to use calcium carbonate alone or a mixture of calcium carbonate and graphite as a shield.

【0004】これらの酸化物や炭化物は、特に熱CVD
法により薄膜を形成する際、強い酸化雰囲気にさらされ
ることにより、薄膜が形成される基体のガラスとわずか
に反応し、薄膜形成後遮蔽物を除去して得られる基体の
表面には曇りが生じ、きれいな外観を要求される用途に
は使用できない。さらに遮蔽物を除去して残った透明導
電膜等の薄膜の端が持ち上がるいわゆるスパイク現象が
起りやすい。
These oxides and carbides are especially useful for thermal CVD.
When a thin film is formed by the method, it is exposed to a strong oxidizing atmosphere and reacts slightly with the glass of the substrate on which the thin film is formed, resulting in fogging on the surface of the substrate obtained by removing the shield after forming the thin film. However, it cannot be used for applications that require a clean appearance. Furthermore, the so-called spike phenomenon in which the edge of the thin film such as the transparent conductive film remaining after removing the shield is lifted easily occurs.

【0005】特開平2−75536号公報では、メソフ
ェーズカーボン小球体を遮蔽物として用いるものが提案
されている。この方法は、スパイクは小さくなるという
利点があるが、特に熱CVD法により薄膜を形成する
際、強い酸化雰囲気にさらされることによりカーボンが
蒸発し、わずかながら基体ガラス表面に曇が生じること
が明らかになっている。
Japanese Unexamined Patent Publication (Kokai) No. 2-75536 proposes a device that uses mesophase carbon microspheres as a shield. This method has the advantage of reducing spikes, but it is clear that carbon is vaporized by exposure to a strong oxidizing atmosphere, especially when forming a thin film by the thermal CVD method, and a slight clouding occurs on the substrate glass surface. It has become.

【0006】また、これら従来の遮蔽物は主に無機化合
物と充填物とからなるため、緻密な膜構造をしていな
い。したがって、これらの遮蔽物の上に、たとえば熱C
VD法により薄膜を形成した場合、完全に原料ガスを遮
断できない場合があり、わずかながら遮蔽物の下にも原
料ガスの回り込みが観察される。また、この回り込み量
が増えると、遮蔽物そのものが基体に焼き付いてしまう
ため、リフトオフ可能な薄膜の厚みは500nm程度ま
でであった。
Further, since these conventional shields mainly consist of an inorganic compound and a filler, they do not have a dense film structure. Therefore, on these shields, for example, heat C
When a thin film is formed by the VD method, the raw material gas may not be completely blocked, and a slight wraparound of the raw material gas is observed under the shield. Further, if the amount of this wraparound increases, the shield itself will be burned onto the substrate, so the thickness of the thin film that can be lifted off was about 500 nm.

【0007】これに対して、本出願人が特願平5−16
6512号で提案している水溶性無機塩被膜を用いる薄
膜除去方法は、スパイクが観察されないという優れた特
徴がある。またアルギン酸ナトリウム等と組み合わせ
て、スクリーン印刷により薄膜のパターニングを行うこ
とも提案している。しかし、このインクをスクリーン印
刷法に用いた場合、精細なパターニングがしにくいこと
がわかった。
On the other hand, the present applicant filed Japanese Patent Application No. 5-16
The thin film removal method using a water-soluble inorganic salt coating proposed in Japanese Patent No. 6512 has an excellent feature that spikes are not observed. In addition, it is also proposed to pattern a thin film by screen printing in combination with sodium alginate or the like. However, it was found that fine patterning is difficult to achieve when this ink is used in the screen printing method.

【0008】[0008]

【発明が解決しようとする課題】本発明は、スクリーン
印刷法に適用可能であり、かつ、スパイクが観察されな
い薄膜パターン形成用ペーストの提供を目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a paste for forming a thin film pattern, which is applicable to the screen printing method and in which spikes are not observed.

【0009】[0009]

【課題を解決するための手段】本発明は、水溶性無機塩
を3〜15重量%、水溶性高分子からなる増粘剤を0.
5〜6重量%、平均粒径が0. 1〜2μmのフィラーを
0. 1〜10重量%、アルコール系有機溶剤を1〜20
重量%、および水を50〜95重量%含むことを特徴と
する薄膜パターン形成用ペーストである。
According to the present invention, a water-soluble inorganic salt is contained in an amount of 3 to 15% by weight, and a thickener comprising a water-soluble polymer is added.
5 to 6% by weight, 0.1 to 10% by weight of filler having an average particle size of 0.1 to 2 μm, and 1 to 20% of alcohol organic solvent
%, And 50 to 95% by weight of water, which is a thin film pattern forming paste.

【0010】本発明のペーストは、薄膜を形成する場所
ではない部分の基体表面に、スクリーン印刷法により高
精度に印刷される。その後、乾燥・焼成により水溶性無
機塩とフィラーとからなる緻密な水溶性無機塩被膜が形
成され、次いで基体表面に薄膜が適当な方法により形成
される。その後、この薄膜付き基体が水洗されて、水溶
性無機塩被膜とその被膜上面の薄膜だけが除去されるこ
とにより、高精細な薄膜パターンが形成される。
The paste of the present invention is printed with high accuracy by a screen printing method on the surface of the substrate in a portion which is not a place for forming a thin film. Then, by drying and baking, a dense water-soluble inorganic salt film composed of a water-soluble inorganic salt and a filler is formed, and then a thin film is formed on the surface of the substrate by an appropriate method. Then, the substrate with a thin film is washed with water to remove only the water-soluble inorganic salt film and the thin film on the upper surface of the film, thereby forming a high-definition thin film pattern.

【0011】本発明における水溶性無機塩としては、水
への溶解度が高く易水溶性で、安価である等の一般的に
望ましい性質の他に、所望のパターンをもって基体上に
薄く、均一に、点在することなく、緻密に覆うことがで
きるものが望ましい。
The water-soluble inorganic salt in the present invention has generally desirable properties such as high solubility in water, high water-solubility, low cost, etc., as well as a thin and uniform pattern on a substrate with a desired pattern. It is desirable that it can be closely covered without being scattered.

【0012】このような物質としては共有結合性が強
く、網目構造を形成するものが好ましく、たとえば、リ
ン酸塩、ホウ酸塩、ケイ酸塩、硫酸塩、硫黄を含む無機
塩、およびこれらの塩の複塩などが挙げられる。特にリ
ン酸塩、ホウ酸塩は、良好な結果が得られるので、好ま
しい。より具体的には、トリポリリン酸ナトリウム、ヘ
キサメタリン酸ナトリウム、四ホウ酸ナトリウム、四ホ
ウ酸カリウムなどが挙げられる。
As such a substance, those having a strong covalent bond and forming a network structure are preferable. For example, phosphates, borates, silicates, sulfates, inorganic salts containing sulfur, and these salts. A double salt of a salt etc. are mentioned. Particularly, phosphates and borates are preferable because good results can be obtained. More specifically, sodium tripolyphosphate, sodium hexametaphosphate, sodium tetraborate, potassium tetraborate and the like can be mentioned.

【0013】水溶性無機塩の含有量はペースト中に3〜
15重量%とされる。15重量%超過では、乾燥、焼成
後均一で緻密な被膜にすることができない。
The content of the water-soluble inorganic salt in the paste is 3 to
It is set to 15% by weight. If it exceeds 15% by weight, a uniform and dense coating cannot be obtained after drying and firing.

【0014】水溶性高分子からなる増粘剤としては、水
溶性で粘性を適正化できる水溶性高分子、たとえばヒド
ロキシエチルセルロース、ヒドロキシプロピルセルロー
ス、カルボキシメチルセルロースなどの多糖類、アルギ
ン酸ナトリウム、アルギン酸アンモニウムなどの有機酸
塩、ポリビニルアルコール、ポリエチレングリコール、
ポリアクリルアミド、ポリアクリル酸ナトリウム等が使
用できる。特にアルギン酸ナトリウム、アルギン酸アン
モニウムで良好な結果が得られる。
Examples of the thickener composed of a water-soluble polymer include water-soluble polymers capable of optimizing viscosity, such as polysaccharides such as hydroxyethyl cellulose, hydroxypropyl cellulose and carboxymethyl cellulose, sodium alginate and ammonium alginate. Organic acid salt, polyvinyl alcohol, polyethylene glycol,
Polyacrylamide, sodium polyacrylate, etc. can be used. Particularly good results are obtained with sodium alginate and ammonium alginate.

【0015】水溶性高分子からなる増粘剤の含有量はペ
ースト中に0. 5〜6重量%とされ、好ましくは1. 5
〜4重量%とされる。
The content of the thickener made of a water-soluble polymer is 0.5 to 6% by weight in the paste, preferably 1.5.
~ 4% by weight.

【0016】水溶性高分子からなる増粘剤の他に、パタ
ーニングを高精細にするには、ぺーストに適度なチクソ
トロピー性を持たせる必要があり、このためにペースト
中にフィラーを含有させる。このフィラーとしては無機
フィラー、有機フィラーが使用できる。
In addition to the thickener made of a water-soluble polymer, it is necessary to impart appropriate thixotropy to the paste in order to achieve fine patterning. For this reason, a paste is included in the paste. An inorganic filler or an organic filler can be used as this filler.

【0017】たとえば熱CVD法により約500℃で薄
膜を形成する場合には、CeO2 、TiO2 、ZrO
2 、Nb23 、カーボンなどの無機フィラーが基体と
焼き付きにくく、好ましい。薄膜を低い温度で形成する
場合には、ポリ塩化ビニル、ポリメチルメタクリレー
ト、ポリスチレン等の有機フィラーを使用できる。
For example, when a thin film is formed at about 500 ° C. by the thermal CVD method, CeO 2 , TiO 2 , ZrO is used.
Inorganic fillers such as 2 , Nb 2 O 3 and carbon are preferable because they hardly stick to the substrate. When forming the thin film at a low temperature, an organic filler such as polyvinyl chloride, polymethylmethacrylate, or polystyrene can be used.

【0018】フィラーの平均粒径は0. 1〜2μmであ
ることが必要であり、好ましくは0. 1〜1. 5μmで
ある。2μm超では、熱処理後緻密な被膜にすることが
できない。
The average particle size of the filler must be 0.1 to 2 μm, preferably 0.1 to 1.5 μm. If it exceeds 2 μm, a dense coating cannot be obtained after heat treatment.

【0019】フィラーの含有量はペースト中に0. 1〜
10重量%とされ、好ましくは0.4〜7重量%とされ
る。10重量%超では、熱処理後被膜が緻密な構造とな
らず遮蔽性が低下したり、薄膜をリフトオフした後、エ
ッジにスパイクとして残ったりする。
The content of the filler is 0.1 to 1 in the paste.
The content is 10% by weight, preferably 0.4 to 7% by weight. If it exceeds 10% by weight, the coating does not have a dense structure after heat treatment and the shielding property is lowered, or after the film is lifted off, it remains as a spike on the edge.

【0020】本発明において用いられる水の含有量はペ
ースト中に50〜95重量%とされ、好ましくは75〜
95重量%とされる。
The content of water used in the present invention is 50 to 95% by weight in the paste, preferably 75 to 95% by weight.
It is set to 95% by weight.

【0021】溶媒が水だけの場合には、スクリーン印刷
すると固形分がスクリーン印刷版に付着するため連続印
刷枚数が限られる。その点を改良するために、ペースト
中にアルコール系有機溶剤を添加する必要がある。
When the solvent is only water, the solid content adheres to the screen printing plate when screen printing, so that the number of continuously printed sheets is limited. In order to improve that point, it is necessary to add an alcoholic organic solvent to the paste.

【0022】このアルコール系有機溶剤としては、エタ
ノール、2−プロパノール、エチレングリコール、プロ
ピレングルコール、グリセリンなどが挙げられる。アル
コール系有機溶剤の含有量はペースト中に1〜20重量
%とされ、好ましくは5〜10重量%とされる。
Examples of the alcohol-based organic solvent include ethanol, 2-propanol, ethylene glycol, propylene glycol and glycerin. The content of the alcoholic organic solvent in the paste is 1 to 20% by weight, preferably 5 to 10% by weight.

【0023】本発明のペーストには、その他にフィラー
の分散剤やペースト印刷時の消泡剤を添加できる。縮合
ナフタレンスルホン酸ナトリウム、ポリカルボン酸アン
モニウムなどの界面活性剤が好適な例として挙げられ
る。
In addition to the filler of the present invention, a dispersant for the filler and a defoaming agent for printing the paste can be added. Suitable examples include surfactants such as condensed sodium naphthalene sulfonate and ammonium polycarboxylate.

【0024】水溶性無機塩が塗布される基体は、特に限
定されず、ガラス、プラスチック、セラミックス、単結
晶体、金属、あるいはこれらの表面に各種コーティング
がされたもの等が挙げられる。
The substrate to which the water-soluble inorganic salt is applied is not particularly limited, and examples thereof include glass, plastics, ceramics, single crystals, metals, and those having various coatings on their surfaces.

【0025】パターニングすべき薄膜の形成方法は、特
に限定されず、蒸着法、スパッタリング法、スプレー
法、ディップ法、CVD法、またはキャスティング法等
が挙げられる。
The method of forming the thin film to be patterned is not particularly limited, and examples thereof include vapor deposition method, sputtering method, spray method, dip method, CVD method, casting method and the like.

【0026】[0026]

【作用】本発明において基体上に塗布されたペースト
は、従来のペーストと異なり、乾燥、焼成後はフィラー
を含んだ厚さ約1〜2μmの緻密な膜となる。したがっ
て、薄膜を形成する際のガスの回り込みがない。また、
被膜は水溶性無機塩であるため、基体を水洗することで
容易に剥離し、従来困難であった1μm以上の薄膜のリ
フトオフも可能となる。また、スパイク現象も起こらな
い。
In the present invention, unlike the conventional paste, the paste applied on the substrate becomes a dense film having a thickness of about 1 to 2 μm containing the filler after drying and firing. Therefore, there is no gas wraparound when forming the thin film. Also,
Since the coating film is a water-soluble inorganic salt, it can be easily peeled off by washing the substrate with water, and lift-off of a thin film having a thickness of 1 μm or more, which has been difficult in the past, is also possible. Also, the spike phenomenon does not occur.

【0027】[0027]

【実施例】【Example】

[実施例1]トリポリリン酸ナトリウム6. 4重量%、
アルギン酸アンモニウム3. 0重量%、平均粒径0. 6
μmの酸化セリウム0.85重量%、エタノール4.2
5重量%、水85.1重量%、ポリカルボン酸アンモニ
ウム0. 4重量%からなるペーストをスクリーン印刷で
所望のパターンをもってガラス基体に印刷した後、12
0℃で10分乾燥し、さらに450℃で20分焼成した
ところ、クラックのない緻密な被膜が形成された。
Example 1 6.4% by weight of sodium tripolyphosphate,
Ammonium alginate 3.0% by weight, average particle size 0.6
μm cerium oxide 0.85% by weight, ethanol 4.2
After printing a paste consisting of 5% by weight, 85.1% by weight of water and 0.4% by weight of ammonium polycarboxylate on a glass substrate with a desired pattern by screen printing, 12
When dried at 0 ° C. for 10 minutes and further baked at 450 ° C. for 20 minutes, a dense coating film without cracks was formed.

【0028】このガラス基体を500℃に加熱し、この
基体面にSiH4 とO2 ガスを吹き付け、SiO2
(膜厚約100nm)を形成し、引き続きガラス基体を
530℃に加熱し、その表面のSiO2 膜上にガス状の
SnCl4 とH2 Oとを吹き付けて、SnO2 膜(膜厚
約150nm)を形成した。この基体を流水下でブラシ
洗浄すると、水溶性被膜上に形成されたSiO2 膜、S
nO2 膜は水溶性被膜とともに流れ落ち、パターニング
されたSiO2 下地膜付きSnO2 導電性薄膜がガラス
基体上に形成できた。水溶性被膜があった部分のガラス
上にはSiO2 膜およびSnO2 膜はなく、無色透明で
あった。また、スパイクは観察されなかった。
This glass substrate is heated to 500 ° C., SiH 4 and O 2 gas are blown onto the substrate surface to form a SiO 2 film (film thickness of about 100 nm), and then the glass substrate is heated to 530 ° C. Gaseous SnCl 4 and H 2 O were sprayed onto the SiO 2 film on the surface to form a SnO 2 film (film thickness of about 150 nm). When this substrate is brush washed under running water, the SiO 2 film, S and S formed on the water-soluble film
The nO 2 film flowed down together with the water-soluble film, and a patterned SnO 2 conductive thin film with a SiO 2 underlayer was formed on the glass substrate. There was no SiO 2 film or SnO 2 film on the glass where the water-soluble coating was present, and it was colorless and transparent. No spike was observed.

【0029】[実施例2]トリポリリン酸ナトリウム
4.3重量%、アルギン酸ナトリウム2. 1重量%、平
均粒径1. 2μmの酸化チタン3.4重量%、2−プロ
パノール4.3重量%、水85.5重量%、ポリカルボ
ン酸アンモニウム0. 43重量%からなるペーストをス
クリーン印刷でガラス基体に印刷した後、120℃で1
0分乾燥し、さらに500℃で10分焼成したところ、
クラックのない緻密な被膜が形成された。
Example 2 4.3% by weight of sodium tripolyphosphate, 2.1% by weight of sodium alginate, 3.4% by weight of titanium oxide having an average particle size of 1.2 μm, 4.3% by weight of 2-propanol and water. After printing a paste consisting of 85.5% by weight and ammonium polycarboxylate 0.43% by weight on a glass substrate by screen printing, the paste was applied at 120 ° C. for 1 hour.
After drying for 0 minutes and baking at 500 ° C for 10 minutes,
A dense film without cracks was formed.

【0030】このガラス基体を500℃に加熱し、この
基体面にSiH4 とO2 ガスを吹き付け、SiO2
(膜厚約100nm)を形成し、引き続きガラス基体を
530℃に加熱し、その表面のSiO2 膜上にガス状の
SnCl4 とH2 Oとを吹き付けて、SnO2 膜(膜厚
約1μm)を形成した。この基体を流水下でブラシ洗浄
すると、水溶性被膜上に形成されたSiO2 膜、SnO
2 膜は水溶性被膜とともに流れ落ち、パターニングされ
たSiO2 下地膜付きSnO2 導電性薄膜がガラス基体
状に形成できた。水溶性被膜があった部分のガラス上に
はSiO2 膜およびSnO2 膜はなく、無色透明であっ
た。また、スパイクは観察されなかった。
This glass substrate was heated to 500 ° C., SiH 4 and O 2 gas were blown onto the substrate surface to form a SiO 2 film (film thickness of about 100 nm), and then the glass substrate was heated to 530 ° C. Gaseous SnCl 4 and H 2 O were sprayed on the SiO 2 film on the surface to form a SnO 2 film (film thickness: about 1 μm). When this substrate was brush-washed under running water, the SiO 2 film, SnO 2 formed on the water-soluble film
The two films flowed down together with the water-soluble film, and a patterned SnO 2 conductive thin film with a SiO 2 underlayer could be formed on the glass substrate. There was no SiO 2 film or SnO 2 film on the glass where the water-soluble coating was present, and it was colorless and transparent. No spike was observed.

【0031】[比較例1]トリポリリン酸ナトリウム
4.5重量%、アルギン酸ナトリウム3.6重量%、水
91重量%、ポリカルボン酸アンモニウム0. 9重量%
からなるペーストをスクリーン印刷で所定のパターンを
もってガラス基体に印刷を試みたが、実施例1と相違し
て、印刷後の膜にはカケ、カスレなどパターンの一部分
が寸断された箇所があった。この基体を120℃で10
分乾燥し、さらに500℃で10分焼成したところ、水
溶性被膜の一部にはクラックがあったが、被膜の他の部
分は緻密な膜が形成されていた。
Comparative Example 1 4.5% by weight of sodium tripolyphosphate, 3.6% by weight of sodium alginate, 91% by weight of water and 0.9% by weight of ammonium polycarboxylate.
An attempt was made to screen-print the paste consisting of the above into a glass substrate with a predetermined pattern by a screen printing. However, unlike Example 1, the film after printing had some portions such as chipping and scraping where the pattern was cut off. This substrate at 10 ° C for 10
After minute drying and further baking at 500 ° C. for 10 minutes, a crack was found in a part of the water-soluble film, but a dense film was formed in the other part of the film.

【0032】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、被膜のクラック部分からSiO2 膜、S
nO2 膜がガラス基体側に回り込んでいることがわかっ
た。一方、均一な水溶性被膜の形成されていた部分のガ
ラス面上にはSiO2 膜、SnO2 の回り込みは観察さ
れなかった。
S was added to this glass substrate in the same manner as in Example 1.
After forming the iO 2 film and the SnO 2 film, brush cleaning under running water revealed that the SiO 2 film and S
It was found that the nO 2 film wraps around the glass substrate side. On the other hand, no wraparound of the SiO 2 film and SnO 2 was observed on the glass surface where the uniform water-soluble coating was formed.

【0033】[比較例2]トリポリリン酸ナトリウム
6.6重量%、アルギン酸アンモニウム4.9重量%、
平均粒径3μmの酸化セリウム1.6重量%、2−プロ
パノール4.1重量%、水82.4重量%、ポリカルボ
ン酸アンモニウム0. 4重量%からなるペーストをスク
リーン印刷で所定のパターンをもってガラス基体に印刷
した後、120℃で10分乾燥し、さらに500℃で1
0分焼成したところ、一部の酸化セリウム粒子のまわり
の被膜にクラックがあった。
Comparative Example 2 Sodium tripolyphosphate 6.6% by weight, ammonium alginate 4.9% by weight,
A paste composed of 1.6% by weight of cerium oxide having an average particle diameter of 3 μm, 4.1% by weight of 2-propanol, 82.4% by weight of water and 0.4% by weight of ammonium polycarboxylate was screen-printed into a glass having a predetermined pattern. After printing on the substrate, dry at 120 ° C for 10 minutes and then at 500 ° C for 1 minute.
When it was baked for 0 minutes, cracks were found in the coating around some cerium oxide particles.

【0034】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、被膜のクラック部分からSiO2 膜、S
nO2 がガラス基体側に回り込んでいることがわかっ
た。また被膜のエッジ部分にはCeO2 粒子が残り、ス
パイクが形成されていた。
S was added to this glass substrate in the same manner as in Example 1.
After forming the iO 2 film and the SnO 2 film, brush cleaning under running water revealed that the SiO 2 film and S
It was found that nO 2 wraps around the glass substrate side. Further, CeO 2 particles remained on the edge portion of the film, and spikes were formed.

【0035】[比較例3]トリポリリン酸ナトリウム1
5.3重量%、アルギン酸アンモニウム7.6重量%、
平均粒径0.6μmの酸化セリウム0.8重量%、水7
6.3重量%からなるペーストをスクリーン印刷で所定
のパターンをもってガラス基体に印刷した後、120℃
で10分乾燥し、さらに500℃で10分焼成したとこ
ろ、緻密な被膜が形成されなかった。
[Comparative Example 3] Sodium tripolyphosphate 1
5.3% by weight, ammonium alginate 7.6% by weight,
0.8% by weight of cerium oxide having an average particle size of 0.6 μm, water 7
After printing a paste consisting of 6.3% by weight on a glass substrate with a predetermined pattern by screen printing, 120 ° C
After drying for 10 minutes and baking at 500 ° C. for 10 minutes, a dense film was not formed.

【0036】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、被膜のクラック部分からSiO2 膜、S
nO2 がガラス基体側に回り込んでいることがわかっ
た。
S was added to this glass substrate in the same manner as in Example 1.
After forming the iO 2 film and the SnO 2 film, brush cleaning under running water revealed that the SiO 2 film and S
It was found that nO 2 wraps around the glass substrate side.

【0037】[0037]

【発明の効果】本発明によれば、水溶性無機塩を高精細
に基体上にスクリーン印刷でき、それを乾燥、焼成する
ことでクラックや欠けのない緻密な水溶性被膜が得られ
る。この被膜は易水溶性であるため、薄膜形成後の被膜
の剥離を水洗で容易に行うことができ、剥離性に優れる
ため、約1μmの薄膜でもパターニング可能となる。ま
た被膜は緻密なためガスの回り込みを防ぎ、剥離後の基
体の表面にはくもりがなく、さらに、スパイク現象も起
こらない。
According to the present invention, a water-soluble inorganic salt can be screen-printed on a substrate with high precision, and a dense water-soluble coating film free from cracks and cracks can be obtained by drying and baking it. Since this coating is easily water-soluble, the coating can be easily peeled off by washing with water after the thin film is formed. Since the coating has excellent releasability, even a thin film of about 1 μm can be patterned. Further, since the film is dense, it prevents gas from flowing around, the surface of the substrate after peeling is not clouded, and the spike phenomenon does not occur.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 種田 直樹 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Naoki Taneda 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa Prefecture Central Research Laboratory, Asahi Glass Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】水溶性無機塩を3〜15重量%、水溶性高
分子からなる増粘剤を0. 5〜6重量%、平均粒径が
0. 1〜2μmのフィラーを0. 1〜10重量%、アル
コール系有機溶剤を1〜20重量%、および水を50〜
95重量%含むことを特徴とする薄膜パターン形成用ペ
ースト。
1. A water-soluble inorganic salt in an amount of 3 to 15% by weight, a water-soluble polymer thickener in an amount of 0.5 to 6% by weight, and a filler having an average particle diameter of 0.1 to 2 μm in an amount of 0.1 to 1. 10% by weight, 1 to 20% by weight of alcohol organic solvent, and 50 to 50% of water
A paste for forming a thin film pattern, which contains 95% by weight.
【請求項2】水溶性無機塩がリン酸塩および/またはホ
ウ酸塩である請求項1の薄膜パターン形成用ペースト。
2. The thin film pattern forming paste according to claim 1, wherein the water-soluble inorganic salt is a phosphate and / or a borate.
【請求項3】フィラーが無機フィラーである請求項1の
薄膜パターン形成用ペースト。
3. The paste for forming a thin film pattern according to claim 1, wherein the filler is an inorganic filler.
JP12930794A 1994-06-10 1994-06-10 Paste for thin film pattern formation Expired - Fee Related JP3279435B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12930794A JP3279435B2 (en) 1994-06-10 1994-06-10 Paste for thin film pattern formation
PCT/JP1994/001938 WO1995034608A1 (en) 1994-06-10 1994-11-17 Substrate coated with water-soluble salt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12930794A JP3279435B2 (en) 1994-06-10 1994-06-10 Paste for thin film pattern formation

Publications (2)

Publication Number Publication Date
JPH07331180A true JPH07331180A (en) 1995-12-19
JP3279435B2 JP3279435B2 (en) 2002-04-30

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ID=15006333

Family Applications (1)

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Country Link
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WO (1) WO1995034608A1 (en)

Cited By (4)

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US6153535A (en) * 1996-10-23 2000-11-28 Asahi Glass Company Ltd. Method for removing a thin film for a window glass
JP2002264461A (en) * 2001-03-09 2002-09-18 Dainippon Ink & Chem Inc Method for forming laminating pattern
JP2012146620A (en) * 2011-01-10 2012-08-02 Samsung Electro-Mechanics Co Ltd Conductive polymer composition and conductive film using the same
JP2013247177A (en) * 2012-05-24 2013-12-09 Goo Chemical Co Ltd Resist agent for lift-off method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6406639B2 (en) 1996-11-26 2002-06-18 Nippon Sheet Glass Co., Ltd. Method of partially forming oxide layer on glass substrate
EP0955276A4 (en) * 1996-11-26 2001-05-09 Nippon Sheet Glass Co Ltd Method for partly forming oxide layer
GB2325562B (en) * 1997-05-23 2001-08-08 Asahi Glass Co Ltd A cathode ray tube glass,a method for producing the cathode ray tube glass,and method for cleaning the cathode ray tube glass
CA2349574A1 (en) * 1998-11-10 2000-05-18 Nippon Sheet Glass Co., Ltd. Glass article, method for handling glass article and handling tool for glass article
TWI353808B (en) * 2008-04-28 2011-12-01 Ind Tech Res Inst Method for fabricating conductive pattern on flexi
CN113717604A (en) * 2020-05-25 2021-11-30 苏州市汉宜化学有限公司 High-lubrication water-soluble nickel plating slip-increasing protective agent

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JPH0648752B2 (en) * 1986-07-31 1994-06-22 富士通株式会社 Method for forming thick film pattern
JP3072324B2 (en) * 1990-03-06 2000-07-31 石原薬品株式会社 Weld spatter adhesion inhibitor
JPH0411981A (en) * 1990-04-27 1992-01-16 Kaken Kogyo Kk Contaminant removing method and agent

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153535A (en) * 1996-10-23 2000-11-28 Asahi Glass Company Ltd. Method for removing a thin film for a window glass
JP2002264461A (en) * 2001-03-09 2002-09-18 Dainippon Ink & Chem Inc Method for forming laminating pattern
JP2012146620A (en) * 2011-01-10 2012-08-02 Samsung Electro-Mechanics Co Ltd Conductive polymer composition and conductive film using the same
JP2013247177A (en) * 2012-05-24 2013-12-09 Goo Chemical Co Ltd Resist agent for lift-off method

Also Published As

Publication number Publication date
WO1995034608A1 (en) 1995-12-21
JP3279435B2 (en) 2002-04-30

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