JPH07328410A - Evacuating device - Google Patents

Evacuating device

Info

Publication number
JPH07328410A
JPH07328410A JP13011794A JP13011794A JPH07328410A JP H07328410 A JPH07328410 A JP H07328410A JP 13011794 A JP13011794 A JP 13011794A JP 13011794 A JP13011794 A JP 13011794A JP H07328410 A JPH07328410 A JP H07328410A
Authority
JP
Japan
Prior art keywords
valve
vacuum
vacuum pump
pressure
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13011794A
Other languages
Japanese (ja)
Inventor
Takashi Nagaoka
隆司 長岡
Seiji Sakagami
誠二 坂上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13011794A priority Critical patent/JPH07328410A/en
Publication of JPH07328410A publication Critical patent/JPH07328410A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To protect a vacuum pump from a gas at atmosphereic pressure by providing a valve to a vacuum pipeline connecting the vacuum pump and a vacuum vessel and opening or closing the valve based on the output of the pressure sensor set on the upstream side of the valve. CONSTITUTION:This evacuating device 3 consisting of a vacuum pump 1 and a vacuum pipeline 2 is connected to the reaction chamber 4 of a semiconductor producing device, for example. A valve 5 is provided at the outlet of the chamber 4, and a pressure sensor 6 and a special valve are successively furnished on the downstream side of the valve 5. The value detected by the sensor 6 is inputted to a controller 8, and, when the value exceeds a set value, the valve 7 is controlled by the controller 8 and throttled. Meanwhile, a loading and unloading chamber 10 is connected to the opposite side of the chamber 4 through a valve 11 and communicated with the atmosphere through the valve 11. Since the flow rate of the gas flowing into the vacuum pump 1 is limited by the special valve 7, a vacuum pump 1 of rigid structure need not be designed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、排気口を大気圧で運転
される真空ポンプ,配管,真空容器から成り、特に、半
導体製造装置に用いられる高真空ポンプのバックポンプ
のように、通常はポンプ吸込口の圧力が低いが、時々大
気を導入するような真空排気装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention comprises a vacuum pump whose exhaust port is operated at atmospheric pressure, piping, and a vacuum container. In particular, like a back pump of a high vacuum pump used in a semiconductor manufacturing apparatus, The present invention relates to a vacuum evacuation device in which the pressure at the pump suction port is low, but air is sometimes introduced.

【0002】[0002]

【従来の技術】半導体製造装置に用いられる真空排気装
置は、真空容器内を真空に排気したり、低圧下でプロセ
スガスを連続的に流して真空容器内で反応させるとき
に、真空容器内圧力を一定に保持する役割を持つ。真空
容器内の圧力があまり低くない場合には、用いられる真
空ポンプは中低真空ポンプ単独であることが多い。一
方、真空容器内を高真空,超高真空にする必要がある場
合には、主ポンプとして高真空ポンプを用いて、その背
圧を維持するためにバックポンプとして中低真空ポンプ
が用いられる。また、最近の半導体製造装置は、装置外
からウェハの出し入れをするためのロード,アンロード
室を備え、反応室は通常大気に曝さないようにしたもの
が増えている。そのような場合は、反応室の圧力は高く
なっても数百Pa程度であり、したがって反応室を排気
する排気装置のバックポンプも、吸込口圧力は数千Pa
程度より高くなることはない。しかし、そのような半導
体製造装置であっても、真空容器内の清掃等で真空容器
内を大気に曝す必要があり、その後は真空容器内を大気
圧から排気しなければならない。そのため、排気装置に
用いられる真空ポンプは、通常はほとんどポンプ吸込口
圧力が大気圧、または大気圧近傍になることがないにも
拘わらず、吸込口圧力が大気圧になっても良いような設
計をせざるを得なかった。
2. Description of the Related Art A vacuum exhaust device used in a semiconductor manufacturing apparatus is designed to evacuate a vacuum container to a vacuum or to allow a process gas to continuously flow under a low pressure to cause a reaction in the vacuum container. Has a role to keep constant. When the pressure in the vacuum container is not too low, the vacuum pump used is often a medium or low vacuum pump alone. On the other hand, when it is necessary to make the inside of the vacuum container a high vacuum or an ultra high vacuum, a high vacuum pump is used as the main pump, and a medium or low vacuum pump is used as the back pump to maintain the back pressure. Further, recent semiconductor manufacturing apparatuses are increasingly equipped with load and unload chambers for loading and unloading wafers from the outside of the apparatus, and the reaction chambers are not usually exposed to the atmosphere. In such a case, the pressure in the reaction chamber is about several hundred Pa even if the pressure rises, and therefore the back pump of the exhaust device that exhausts the reaction chamber also has a suction port pressure of several thousand Pa.
It will never be higher than that. However, even in such a semiconductor manufacturing apparatus, it is necessary to expose the inside of the vacuum container to the atmosphere by cleaning the inside of the vacuum container or the like, and then to exhaust the inside of the vacuum container from atmospheric pressure. Therefore, the vacuum pump used in the exhaust device is designed so that the suction port pressure may be at atmospheric pressure, even though the pump suction port pressure is almost never at or near atmospheric pressure. I had no choice but to do it.

【0003】また、半導体製造プロセスによっては、プ
ロセス中に異物が発生するものがあり、装置の真空容器
内を大気圧状態から急激に排気した場合に、真空容器内
の異物が舞い上がってウェハに付着するなど、その後の
プロセスに悪影響を及ぼすことがある。その際、そのよ
うな装置では、従来は異物の舞い上がりを少なくするた
めに、真空配管の主配管とは別に補助配管を設けて、大
気からの排気の初期段階ではバルブの切り換えにより補
助配管を通して排気するようにしなければならなかっ
た。
Further, depending on the semiconductor manufacturing process, foreign matter may be generated during the process, and when the vacuum vessel of the apparatus is rapidly evacuated from atmospheric pressure, the foreign matter in the vacuum vessel rises and adheres to the wafer. May adversely affect the subsequent process. At that time, in such a device, conventionally, in order to reduce the rise of foreign matter, an auxiliary pipe is provided separately from the main pipe of the vacuum pipe, and at the initial stage of exhausting from the atmosphere, the exhaust gas is exhausted through the auxiliary pipe by switching the valve. Had to do so.

【0004】[0004]

【発明が解決しようとする課題】本発明の目的は、真空
ポンプ,配管,真空容器から成る真空排気系において、
真空ポンプが定常状態で運転されているときに、真空ポ
ンプの上流に接続された内部が大気圧の真空容器から大
気圧の気体が急激にポンプ吸込口に流入した場合に、ポ
ンプを保護することにある。また本発明の他の目的は、
半導体製造装置の真空容器内を大気圧状態から急激に排
気した場合に、真空容器内の異物の舞い上がりを少なく
することにある。
An object of the present invention is to provide a vacuum exhaust system comprising a vacuum pump, piping, and a vacuum container,
When the vacuum pump is operating in a steady state, protect the pump when gas at atmospheric pressure suddenly flows into the pump suction port from a vacuum container with an internal pressure connected to the upstream side of the vacuum pump. It is in. Another object of the present invention is to
This is to reduce the rise of foreign matter in the vacuum container when the inside of the vacuum container of the semiconductor manufacturing apparatus is rapidly evacuated from atmospheric pressure.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明は排気装置を構成する真空ポンプと真空容器
の間の真空配管に、特殊バルブ,特殊バルブの上流に側
に取り付けた圧力センサ、及び圧力センサからの出力に
よってバルブを開閉する信号を出力する制御器を設け、
真空ポンプの上流側の圧力が大気圧、または大気圧近傍
まで上昇したときに特殊バルブを絞り、真空ポンプに流
入する気体の流量を制限するようにした。
In order to achieve the above object, the present invention is directed to a vacuum pipe between a vacuum pump and a vacuum container constituting an exhaust device, a special valve, and a pressure attached upstream of the special valve. A sensor and a controller for outputting a signal for opening and closing the valve by the output from the pressure sensor are provided.
When the pressure on the upstream side of the vacuum pump rises to or near atmospheric pressure, the special valve is throttled to limit the flow rate of gas flowing into the vacuum pump.

【0006】[0006]

【作用】本発明によれば、真空ポンプに流入する気体の
流量を制限することができるので、通常はほとんど吸気
口圧力が大気圧、または大気圧近傍になることのない真
空ポンプについて、必要以上に堅牢な構造設計をする必
要が無くなる。また本発明によれば、半導体製造装置の
真空容器内を大気圧状態から急激に排気した場合に、真
空容器内の異物の舞い上がりを少なくする真空排気装置
を提供することができる。
According to the present invention, since the flow rate of the gas flowing into the vacuum pump can be limited, it is usually unnecessary for a vacuum pump whose intake port pressure is almost at or near atmospheric pressure. It eliminates the need for a robust structural design. Further, according to the present invention, it is possible to provide a vacuum evacuation device that reduces the rise of foreign matter in the vacuum container when the inside of the vacuum container of the semiconductor manufacturing apparatus is rapidly evacuated from the atmospheric pressure state.

【0007】[0007]

【実施例】図1に本発明の真空排気装置の一実施例を示
す。真空ポンプ1,真空配管2から成る真空排気装置3
は、半導体製造装置の反応室4に接続されている。反応
室4は真空容器になっている。反応室4の出口には、バ
ルブ5が取り付けられている。更に、バルブ5のすぐ下
流側には圧力センサ6,真空配管2の真空ポンプ1に近
い側には、特殊バルブ7が取り付けられている。圧力セ
ンサ6の出力信号は制御装置8に送られて、その出力信
号がある設定値を越えると、制御装置8から特殊バルブ
7司令信号が出されて特殊バルブ7を絞るようになって
いる。一方、反応室4の反対側にはバルブ9を介してロ
ード,アンロード室10が接続されており、更にバルブ
11を介して大気に通じている。なお、ロード,アンロ
ード室10には反応室4を排気する排気装置3とは別の
排気装置が設けられているが図示は省略する。以下、こ
の真空排気装置の動作について説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the vacuum exhaust device of the present invention. Vacuum pump 3 consisting of vacuum pump 1 and vacuum piping 2
Is connected to the reaction chamber 4 of the semiconductor manufacturing apparatus. The reaction chamber 4 is a vacuum container. A valve 5 is attached to the outlet of the reaction chamber 4. Further, a special valve 7 is attached to the pressure sensor 6 immediately downstream of the valve 5 and to the side of the vacuum pipe 2 near the vacuum pump 1. The output signal of the pressure sensor 6 is sent to the control device 8, and when the output signal exceeds a certain set value, the control device 8 outputs a command signal for the special valve 7 to throttle the special valve 7. On the other hand, a load / unload chamber 10 is connected to the opposite side of the reaction chamber 4 via a valve 9 and communicates with the atmosphere via a valve 11. The load / unload chamber 10 is provided with an exhaust device different from the exhaust device 3 for exhausting the reaction chamber 4, but the illustration thereof is omitted. The operation of this vacuum exhaust device will be described below.

【0008】枚葉型の半導体製造装置は、成膜プロセス
やエッチングプロセスをウェハ1枚毎に行う。そのため
プロセスを行う真空容器、すなわち、反応室4とは別
に、装置外の大気からウェハの出し入れをするためのロ
ード,アンロード室10を備え、反応室は通常大気に曝
さないようにしたものが増えている。そのような装置に
おいて、成膜プロセスやエッチングプロセスを行う場合
は、反応室4にプロセスガスを供給し、排気装置3で排
気しながら反応室4内の圧力を一定に保持するようにし
ている。このときバルブ9は閉じている。一定のプロセ
スを終了すると、プロセスガスの供給を停止し、排気装
置3で反応室4内の残留ガスを排気する。このとき、更
に窒素等の反応し難いガスを供給してパージすることも
ある。その後、バルブ5を閉じてバルブ9を開き、反応
室4内のウェハをロード,アンロード室10内に移動す
る。そしてバルブ9を閉じてバルブ11を開き、ウェハ
を装置外に出して次に処理するウェハを入れる。この
間、バルブ5は閉じたままなので、真空配管2の内部は
真空であり、反応室4はロード,アンロード室10と同
じ圧力まで上昇するが、数百Pa程度であり、まだ大気
圧よりは十分に低い圧力である。
The single wafer type semiconductor manufacturing apparatus performs a film forming process and an etching process for each wafer. Therefore, in addition to the vacuum chamber for performing the process, that is, the reaction chamber 4, a load and unload chamber 10 for loading and unloading wafers from the atmosphere outside the apparatus is provided, and the reaction chamber is not normally exposed to the atmosphere. is increasing. When a film forming process or an etching process is performed in such an apparatus, a process gas is supplied to the reaction chamber 4 and the pressure in the reaction chamber 4 is kept constant while exhausting with the exhaust device 3. At this time, the valve 9 is closed. When a certain process is finished, the supply of the process gas is stopped and the exhaust device 3 exhausts the residual gas in the reaction chamber 4. At this time, a gas such as nitrogen that is difficult to react may be supplied to purge the gas. Then, the valve 5 is closed and the valve 9 is opened to move the wafer in the reaction chamber 4 into the loading / unloading chamber 10. Then, the valve 9 is closed and the valve 11 is opened, the wafer is taken out of the apparatus and the wafer to be processed next is put therein. During this time, since the valve 5 remains closed, the inside of the vacuum pipe 2 is in vacuum, and the reaction chamber 4 rises to the same pressure as the load / unload chamber 10, but is about several hundred Pa, which is still below atmospheric pressure. It is a sufficiently low pressure.

【0009】以上のように反応室4内でプロセスが行わ
れている間は、真空排気装置3,反応室4ともに大気
圧、もしくは大気圧近傍の圧力になることはない。しか
し反応室4内はプロセスに伴うごみが発生するため、定
期的に清掃する必要があり、そのときは反応室4を大気
に開放しなければならない。また反応室4、あるいはそ
の周辺の装置に故障が発生した場合には、やむを得ず反
応室4を大気に開放せざるを得ない場合もある。このよ
うな場合でも、真空ポンプ1は運転したままにしておく
のが普通である。それはもしも真空ポンプ1を止める
と、半導体製造装置で発生する反応生成物が真空ポンプ
1内で凝縮、あるいは昇華して真空ポンプ1の回転部を
固着してしまい、すぐに再起動することができなくなっ
てしまうことがあるからである。したがって、反応室4
の清掃、もしくは修理が終了した後は、バルブ9を閉じ
て、バルブ5を開き、反応室4内を排気することにな
る。このとき真空ポンプ1には、反応室4内の大気圧の
空気が流入し、反応室4内の圧力がある程度下がるまで
はポンプ吸気口圧力が高い状態で作動しなければならな
い。
As described above, while the process is being performed in the reaction chamber 4, neither the vacuum exhaust device 3 nor the reaction chamber 4 is at atmospheric pressure or at a pressure close to atmospheric pressure. However, since dust inside the reaction chamber 4 is generated during the process, it is necessary to regularly clean the reaction chamber 4, and at that time, the reaction chamber 4 must be opened to the atmosphere. Further, when a failure occurs in the reaction chamber 4 or a device around the reaction chamber 4, it may be unavoidable to open the reaction chamber 4 to the atmosphere. Even in such a case, the vacuum pump 1 is usually left operating. If the vacuum pump 1 is stopped, the reaction product generated in the semiconductor manufacturing apparatus will be condensed or sublimated in the vacuum pump 1 and the rotating part of the vacuum pump 1 will be fixed, so that it can be restarted immediately. This is because it may disappear. Therefore, the reaction chamber 4
After the cleaning or repair of the above is completed, the valve 9 is closed, the valve 5 is opened, and the inside of the reaction chamber 4 is exhausted. At this time, atmospheric pressure air in the reaction chamber 4 flows into the vacuum pump 1 and must be operated at a high pump inlet pressure until the pressure in the reaction chamber 4 drops to some extent.

【0010】本発明では、このように大気圧の気体が真
空ポンプ1に急に流入してきた場合、圧力センサ6がそ
の圧力変化をとらえ、制御装置8は圧力センサ6からの
出力値がある設定値以上になると、特殊バルブ7に司令
信号を送って特殊バルブ7を絞るように調整する。これ
によって真空ポンプ1に流入する気体の流量は減少し、
真空ポンプ1の吸気口圧力は数百Pa以下の低い圧力に
抑えることができる。特殊バルブ7は、バタフライ弁の
ように開度を調整できる形式バルブが考えられる。しか
し、このようなバルブは一般的に短時間で必要な開度に
調整することは難しく、調整にある程度の時間遅れが生
じる。そこで、その時間遅れを少しでも減らす方策とし
て、図2に示すような特殊バルブを用いる。図2に示す
特殊バルブは、弁体12にオリフィス13を設けてあ
り、バルブを閉じてもオリフィス13の穴から一定の気
体が通過できるようになっている。大気圧の気体が真空
ポンプ1に急に流入してきた場合は、制御装置8からの
司令によって特殊バルブ7は開度を調整することなく一
気に閉じるが、完全閉塞状態とはならずにある流量は流
すことができる。この流量は必要に応じて弁体のオリフ
ィス径を大きく、或いは小さく設定することにより調節
することができる。
In the present invention, when the atmospheric pressure gas suddenly flows into the vacuum pump 1 as described above, the pressure sensor 6 detects the pressure change, and the control device 8 sets a certain output value from the pressure sensor 6. When the value exceeds the value, a command signal is sent to the special valve 7 and the special valve 7 is adjusted so as to be throttled. This reduces the flow rate of gas flowing into the vacuum pump 1,
The suction port pressure of the vacuum pump 1 can be suppressed to a low pressure of several hundred Pa or less. The special valve 7 may be a type valve whose opening can be adjusted like a butterfly valve. However, it is generally difficult to adjust the opening of the valve to a required opening in a short time, and a certain time delay occurs in the adjustment. Therefore, as a measure for reducing the time delay as much as possible, a special valve as shown in FIG. 2 is used. In the special valve shown in FIG. 2, an orifice 13 is provided in the valve body 12, and even if the valve is closed, a certain amount of gas can pass through the hole of the orifice 13. When the atmospheric pressure gas suddenly flows into the vacuum pump 1, the special valve 7 is closed at once by the command from the control device 8 without adjusting the opening, but the flow rate at which the valve is not completely closed is Can be flushed. This flow rate can be adjusted by increasing or decreasing the orifice diameter of the valve body as required.

【0011】図3は、本発明の他の実施例の特殊バルブ
を示す図で、バルブ内にストッパ14を設けて、バルブ
を閉じるときに弁体12をストッパ14に当て、バルブ
が完全には閉まらないようにしてある。大気圧の気体が
真空ポンプ1に急に流入してきた場合は、制御装置8か
らの司令によって特殊バルブ7は開度を調整することな
く一気に閉じるが、ストッパ14のために完全閉塞状態
とはならずにある流量は流すことができる。この流量は
必要に応じてストッパ14の高さを高く、或いは低く設
定することにより調節することができる。
FIG. 3 is a view showing a special valve according to another embodiment of the present invention, in which a stopper 14 is provided in the valve, and when the valve is closed, the valve body 12 is brought into contact with the stopper 14 so that the valve is completely closed. I try not to close it. When the atmospheric pressure gas suddenly flows into the vacuum pump 1, the special valve 7 is closed at once by the command from the control device 8 without adjusting the opening, but the stopper 14 does not completely close the valve. Some flow rate can be flowed without. This flow rate can be adjusted by setting the height of the stopper 14 high or low as necessary.

【0012】[0012]

【発明の効果】本発明によれば、真空ポンプに流入する
気体の流量を制限することができるので、通常はほとん
ど吸気口圧力が大気圧、または大気圧近傍になることの
ない真空ポンプについて、必要以上に堅牢な構造設計を
する必要がなくなる。また本発明によれば、半導体製造
装置の真空容器内を大気圧状態から急激に排気した場合
に、真空容器内の異物の舞い上がりを少なくする真空排
気装置を提供することができる。
According to the present invention, since the flow rate of the gas flowing into the vacuum pump can be limited, the vacuum pump which normally has almost no intake port pressure at or near atmospheric pressure is There is no need to make a structural design that is more robust than necessary. Further, according to the present invention, it is possible to provide a vacuum evacuation device that reduces the rise of foreign matter in the vacuum container when the inside of the vacuum container of the semiconductor manufacturing apparatus is rapidly evacuated from the atmospheric pressure state.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す真空排気装置の系統
図。
FIG. 1 is a system diagram of a vacuum exhaust device showing an embodiment of the present invention.

【図2】図1に示す本発明の一実施例に用いるバルブの
斜視図。
FIG. 2 is a perspective view of a valve used in the embodiment of the present invention shown in FIG.

【図3】図1に示す本発明の一実施例に用いる他のバル
ブの斜視図。
FIG. 3 is a perspective view of another valve used in the embodiment of the present invention shown in FIG.

【符号の説明】[Explanation of symbols]

1…真空ポンプ、2…真空配管、3…真空排気装置、6
…圧力センサ、7…特殊バルブ、8…制御装置、12…
弁体、13…オリフィス、14…ストッパ。
1 ... Vacuum pump, 2 ... Vacuum piping, 3 ... Vacuum exhaust device, 6
... pressure sensor, 7 ... special valve, 8 ... control device, 12 ...
Valve body, 13 ... Orifice, 14 ... Stopper.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】排気口圧力が大気圧、または大気圧近傍で
作動する真空ポンプと、前記真空ポンプの上流側に位置
する真空容器と、前記真空ポンプと前記真空容器を接続
する真空配管からなる真空排気系において、前記真空配
管に取り付けたバルブと、前記バルブの上流側に取り付
けた圧力センサと、前記圧力センサからの出力によって
バルブを開閉する信号を出力する制御器から成ることを
特徴とする真空排気装置。
1. A vacuum pump, which operates at or near atmospheric pressure, having an exhaust port pressure, a vacuum container located upstream of the vacuum pump, and a vacuum pipe connecting the vacuum pump and the vacuum container. In the vacuum exhaust system, a valve attached to the vacuum pipe, a pressure sensor attached to the upstream side of the valve, and a controller that outputs a signal for opening and closing the valve according to the output from the pressure sensor. Vacuum exhaust device.
JP13011794A 1994-06-13 1994-06-13 Evacuating device Pending JPH07328410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13011794A JPH07328410A (en) 1994-06-13 1994-06-13 Evacuating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13011794A JPH07328410A (en) 1994-06-13 1994-06-13 Evacuating device

Publications (1)

Publication Number Publication Date
JPH07328410A true JPH07328410A (en) 1995-12-19

Family

ID=15026360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13011794A Pending JPH07328410A (en) 1994-06-13 1994-06-13 Evacuating device

Country Status (1)

Country Link
JP (1) JPH07328410A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448173B1 (en) * 2001-10-12 2004-09-10 주식회사 에스티에스 Sensor detection type angle valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448173B1 (en) * 2001-10-12 2004-09-10 주식회사 에스티에스 Sensor detection type angle valve

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