JPH07326591A - Vertical furnace - Google Patents

Vertical furnace

Info

Publication number
JPH07326591A
JPH07326591A JP11665394A JP11665394A JPH07326591A JP H07326591 A JPH07326591 A JP H07326591A JP 11665394 A JP11665394 A JP 11665394A JP 11665394 A JP11665394 A JP 11665394A JP H07326591 A JPH07326591 A JP H07326591A
Authority
JP
Japan
Prior art keywords
heater
chamber
cooling
wafer
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11665394A
Other languages
Japanese (ja)
Inventor
Eiji Hosaka
英二 保坂
Hideki Kaihatsu
秀樹 開発
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP11665394A priority Critical patent/JPH07326591A/en
Publication of JPH07326591A publication Critical patent/JPH07326591A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To provide a l vertical furnace wherein isothermal quenching is possible by a simple structure of just adding a nozzle for introducing cooling gas, efficiency can be improved by reducing a cooling time and by reducing a process time, difference of thermal hysterisis of a wafer is reduced and yield can be thereby improved without changing conventional constitution. CONSTITUTION:A reaction tube 2 for heating and processing a wafer 4 is inserted into a chamber of a heater 1, an exhaust system 5 for cooling and discharging inside atmosphere is connected to the heater 1 chamber and a nozzle 9 for introducing cooling gas is inserted into the heater 1 chamber.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ウェーハを成膜・酸化
処理など加熱処理する縦型炉に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical furnace for heat-treating wafers such as film formation and oxidation.

【0002】[0002]

【従来の技術】図3は従来の縦型炉の1例の構成を示す
簡略断面図、図4は従来におけるヒータの内部温度分布
を示す説明図である。図3において1はヒータ、1Aは
発熱ゾーン、2はヒータ室内に挿設された反応管、3は
多数枚のウェーハ4を載置したボートで、反応管2内に
搬入され、多数枚のウェーハ4が反応ガス導入による成
膜処理、酸化処理など加熱処理される。5はヒータ1室
上部に設けられた通気穴に連結された排気系で、ヒータ
室内の雰囲気を冷却して排気する。排気系5は、排気炉
に設けられたダンパ6、ラジエータ7及び冷却ブロア8
よりなる。
2. Description of the Related Art FIG. 3 is a schematic sectional view showing the structure of an example of a conventional vertical furnace, and FIG. 4 is an explanatory view showing the internal temperature distribution of a conventional heater. In FIG. 3, 1 is a heater, 1 A is a heat generating zone, 2 is a reaction tube inserted in the heater chamber, 3 is a boat on which a large number of wafers 4 are mounted, and the boat is carried into the reaction tube 2 and a large number of wafers are loaded. 4 is subjected to a heat treatment such as a film forming treatment by introducing a reaction gas and an oxidizing treatment. Reference numeral 5 denotes an exhaust system connected to a ventilation hole provided in the upper part of the heater 1 chamber, which cools the atmosphere in the heater chamber and exhausts it. The exhaust system 5 includes a damper 6, a radiator 7 and a cooling blower 8 provided in the exhaust furnace.
Consists of.

【0003】このような従来の縦型炉は、反応管2内に
ウェーハ4を搬入後、下端の炉口側を密閉してウェーハ
4を加熱処理する。しかる後、ウェーハを搬出するに際
し、炉口側を開けると、炉口側よりヒータ室内へ矢印方
向に冷えたガス(エア)を流入してヒータ室内の雰囲気
を冷却し、冷却に供したガスはヒータ室上部の通気穴よ
りダンパ6,ラジエータ7を通り冷却ブロア8により排
気する。このヒータ室内の雰囲気を冷却することによ
り、反応管2を冷却して内部の処理済ウェーハの温度を
充分に降温してから、反応管2から処理済ウェーハを搬
出するものである。
In such a conventional vertical furnace, after the wafer 4 is loaded into the reaction tube 2, the furnace opening side at the lower end is sealed and the wafer 4 is heat-treated. After that, when the wafer is unloaded, if the furnace opening side is opened, the cooled gas (air) flows from the furnace opening side into the heater chamber in the direction of the arrow to cool the atmosphere inside the heater chamber, and the gas used for cooling is Exhaust is performed by a cooling blower 8 through a damper 6 and a radiator 7 from a ventilation hole in the upper part of the heater chamber. By cooling the atmosphere in the heater chamber to cool the reaction tube 2 and sufficiently lower the temperature of the processed wafer inside, the processed wafer is unloaded from the reaction tube 2.

【0004】[0004]

【発明が解決しようとする課題】上記従来例にあって
は、ウェーハ搬出に際しての炉内冷却時に、冷えたガス
を下端の炉口側Aから引き込むため、ガスがヒータ室上
部の通気穴側Bに到達する頃には図4に示すようにかな
り高温になって温度勾配が生じてしまい、該温度勾配が
炉内の温度差となり、ウェーハの熱履歴が通気穴側と炉
口側で異なるという課題がある。
In the above-mentioned conventional example, since the cooled gas is drawn from the furnace opening side A at the lower end when cooling the inside of the furnace at the time of carrying out the wafer, the gas is blown into the vent hole side B above the heater chamber. As shown in FIG. 4, when the temperature reaches the temperature, a temperature gradient becomes considerably high and a temperature gradient occurs, which causes a temperature difference in the furnace, and the thermal history of the wafer is different between the vent hole side and the furnace mouth side. There are challenges.

【0005】[0005]

【課題を解決するための手段】本発明は、上記課題を解
決するためになされたもので、従来構成を変更すること
なく、冷却ガスを導入するノズルを追加するだけの簡単
な構造で等温急冷ができ、冷却時間を短縮しプロセス時
間を短縮できて効率を向上できると共に、ウェーハの熱
履歴の差が小さくなり、歩留りを向上することができる
縦型炉を提供しようとするものである。即ち、本発明縦
型炉は、ヒータ1室内にウェーハ4を加熱処理する反応
管2を挿設し、ヒータ1室に、内部の雰囲気を冷却して
排気する排気系5を連結すると共にヒータ1室内に冷却
ガスを導入するノズル9を挿入してなることを特徴とす
る。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a simple structure in which a nozzle for introducing a cooling gas is simply added to the isothermal quenching without changing the conventional structure. Therefore, it is an object of the present invention to provide a vertical furnace in which the cooling time can be shortened, the process time can be shortened, the efficiency can be improved, the difference in the thermal history of wafers can be reduced, and the yield can be improved. That is, in the vertical furnace of the present invention, the reaction tube 2 for heat-treating the wafer 4 is inserted in the heater 1 chamber, the exhaust system 5 for cooling and exhausting the internal atmosphere is connected to the heater 1 chamber, and the heater 1 is also connected. It is characterized in that a nozzle 9 for introducing cooling gas is inserted into the room.

【0006】[0006]

【作用】上記のような構成であるから、ノズル9より冷
却ガスをヒータ1室上部内に導入することにより、ヒー
タ室上部の通気穴側Bの温度が低下して温度勾配が少な
くなり、ヒータ室内の温度分布が均一化して反応管2内
部のウェーハ4の熱履歴が炉口側Aと通気穴側Bでほぼ
同一になる。
With the above-described structure, by introducing the cooling gas from the nozzle 9 into the upper part of the heater 1 chamber, the temperature on the vent hole side B in the upper part of the heater chamber is lowered and the temperature gradient is reduced. The temperature distribution inside the chamber becomes uniform, and the thermal history of the wafer 4 inside the reaction tube 2 becomes substantially the same on the furnace port side A and the vent hole side B.

【0007】[0007]

【実施例】図1は本発明縦型炉の1実施例の構成を示す
簡略断面図、図2は本発明におけるヒータの内部温度分
布を示す説明図である。本実施例は、ヒータ1室内に反
応管2を挿設し、この反応管2内に、多数枚のウェーハ
4を載置したボート3を挿入し、ヒータ1室上部に設け
られた通気穴に、内部の雰囲気を冷却して排気する排気
系5を連結すると共にヒータ1室内に冷却ガスを導入す
るノズル9を挿入し、このノズル9に、ガス供給源に接
続された流量調整器10を連結せしめる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a simplified sectional view showing the construction of one embodiment of the vertical furnace of the present invention, and FIG. 2 is an explanatory view showing the internal temperature distribution of the heater in the present invention. In the present embodiment, the reaction tube 2 is inserted into the heater 1 chamber, the boat 3 on which a large number of wafers 4 are placed is inserted into the reaction tube 2, and the vent hole provided in the upper part of the heater 1 chamber is inserted. , The exhaust system 5 for cooling and exhausting the internal atmosphere is connected, and the nozzle 9 for introducing the cooling gas is inserted into the heater 1 chamber, and the nozzle 9 is connected with the flow rate controller 10 connected to the gas supply source. Excuse me.

【0008】上記構成の本実施例において、反応管2内
に多数枚のウェーハ4を載置したボート3を搬入後、下
端の炉口を密閉してウェーハ4を加熱処理する。しかる
後、ウェーハを搬出するに際し炉口側を開けると炉口側
よりヒータ1室内へ矢印方向に冷えたガス(エア)を流
入する一方、ガス供給源よりの冷却ガスが流量調整器1
0により流量を調整されてノズル9よりヒータ1室上部
内に導入することによりヒータ室内の雰囲気を冷却し、
冷却に供したガスは、ヒータ室上部の通気穴より排気系
5のダンパ6,ラジエータ7を通り冷却ブロア8により
排気する。
In the present embodiment having the above-mentioned structure, after the boat 3 having a large number of wafers 4 mounted therein is carried into the reaction tube 2, the furnace opening at the lower end is closed and the wafers 4 are heat-treated. After that, when the furnace opening side is opened when the wafer is unloaded, the cooled gas (air) flows from the furnace opening side into the heater 1 chamber in the direction of the arrow while the cooling gas from the gas supply source flows in the flow controller 1.
The flow rate is adjusted by 0 and introduced into the upper part of the heater 1 chamber from the nozzle 9 to cool the atmosphere in the heater chamber,
The gas used for cooling passes through the ventilation hole in the upper part of the heater chamber, passes through the damper 6 and the radiator 7 of the exhaust system 5, and is exhausted by the cooling blower 8.

【0009】ノズル9による冷却ガスの導入を行わない
場合は、ガス(エア)がヒータ室上部の通気穴側に到達
する頃にはかなり高温になって温度勾配が生じるが、ノ
ズル9による冷却ガスの導入を行った場合は、ヒータ室
上部の通気穴側Bの温度が図2に示すようにノズル9よ
り導入する冷却ガスにより低下して温度勾配が少なくな
り、ヒータ室内の温度分布が均一化して反応管2内部の
ウェーハ4の熱履歴が炉口側Aと通気穴側Bでほぼ同一
になる。なお、ノズル9の本数は1本でも複数本でもよ
く、複数本のノズルを所要角度置きに挿設することによ
りきめ細かな冷却を行うことができる。
When the cooling gas is not introduced through the nozzle 9, the temperature of the gas (air) becomes considerably high by the time when the gas (air) reaches the vent hole side in the upper part of the heater chamber, and a temperature gradient occurs. 2 is introduced, the temperature of the vent hole side B in the upper part of the heater chamber is lowered by the cooling gas introduced from the nozzle 9 as shown in FIG. 2, the temperature gradient is reduced, and the temperature distribution in the heater chamber is made uniform. As a result, the thermal history of the wafer 4 inside the reaction tube 2 becomes substantially the same on the furnace port side A and the vent hole side B. The number of nozzles 9 may be one or plural, and fine cooling can be performed by inserting a plurality of nozzles at a required angle.

【0010】[0010]

【発明の効果】上述の説明より明らかなように本発明に
よれば、従来構成を変更することなく、冷却ガスを導入
するノズルを追加するだけの簡単な構造で等温急冷がで
き、冷却時間を短縮しプロセス時間を短縮できて効率を
向上できると共に、ウェーハの熱履歴の差が小さくな
り、歩留りを向上することができる。
As is apparent from the above description, according to the present invention, isothermal quenching can be performed without changing the conventional structure and with a simple structure in which a nozzle for introducing a cooling gas is added, and the cooling time is reduced. It is possible to shorten the process time, shorten the process time, improve the efficiency, reduce the difference in the thermal history of the wafers, and improve the yield.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明縦型炉の1実施例の構成を示す簡略断面
図である。
FIG. 1 is a simplified cross-sectional view showing the configuration of an example of a vertical furnace of the present invention.

【図2】本発明におけるヒータの内部温度分布を示す説
明図である。
FIG. 2 is an explanatory diagram showing an internal temperature distribution of a heater according to the present invention.

【図3】従来の縦型炉の1例の構成を示す簡略断面図で
ある。
FIG. 3 is a simplified cross-sectional view showing the configuration of an example of a conventional vertical furnace.

【図4】従来におけるヒータの内部温度分布を示す説明
図である。
FIG. 4 is an explanatory diagram showing an internal temperature distribution of a conventional heater.

【符号の説明】[Explanation of symbols]

1 ヒータ 1A 発熱ゾーン 2 反応管 3 ボート 4 ウェーハ 5 排気系 6 ダンパ 7 ラジエータ 8 冷却ブロア 9 ノズル 10 流量調整器 1 Heater 1A Heat Generation Zone 2 Reaction Tube 3 Boat 4 Wafer 5 Exhaust System 6 Damper 7 Radiator 8 Cooling Blower 9 Nozzle 10 Flow Controller

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ヒータ室内にウェーハを加熱処理する反
応管を挿設し、ヒータ室に、内部の雰囲気を冷却して排
気する排気系を連結すると共にヒータ室内に冷却ガスを
導入するノズルを挿入してなることを特徴とする縦型
炉。
1. A reaction tube for heat-treating a wafer is inserted in the heater chamber, an exhaust system for cooling and exhausting the internal atmosphere is connected to the heater chamber, and a nozzle for introducing cooling gas is inserted into the heater chamber. A vertical furnace characterized by
JP11665394A 1994-05-30 1994-05-30 Vertical furnace Pending JPH07326591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11665394A JPH07326591A (en) 1994-05-30 1994-05-30 Vertical furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11665394A JPH07326591A (en) 1994-05-30 1994-05-30 Vertical furnace

Publications (1)

Publication Number Publication Date
JPH07326591A true JPH07326591A (en) 1995-12-12

Family

ID=14692563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11665394A Pending JPH07326591A (en) 1994-05-30 1994-05-30 Vertical furnace

Country Status (1)

Country Link
JP (1) JPH07326591A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102618921A (en) * 2012-04-11 2012-08-01 浙江金瑞泓科技股份有限公司 Double-exhaust flat-plate epitaxial furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102618921A (en) * 2012-04-11 2012-08-01 浙江金瑞泓科技股份有限公司 Double-exhaust flat-plate epitaxial furnace
CN102618921B (en) * 2012-04-11 2015-06-03 浙江金瑞泓科技股份有限公司 Double-exhaust flat-plate epitaxial furnace

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