JPH07326557A - Aligner - Google Patents

Aligner

Info

Publication number
JPH07326557A
JPH07326557A JP6116800A JP11680094A JPH07326557A JP H07326557 A JPH07326557 A JP H07326557A JP 6116800 A JP6116800 A JP 6116800A JP 11680094 A JP11680094 A JP 11680094A JP H07326557 A JPH07326557 A JP H07326557A
Authority
JP
Japan
Prior art keywords
optical system
projection optical
image
mask
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6116800A
Other languages
Japanese (ja)
Other versions
JP3385718B2 (en
Inventor
Masahito Kumazawa
雅人 熊澤
Masaji Tanaka
正司 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP11680094A priority Critical patent/JP3385718B2/en
Priority to KR1019950013641A priority patent/KR950033699A/en
Priority to US08/453,538 priority patent/US5729331A/en
Publication of JPH07326557A publication Critical patent/JPH07326557A/en
Priority to US08/587,346 priority patent/US6157497A/en
Priority to US09/173,530 priority patent/US6351305B1/en
Priority to US09/722,516 priority patent/US6556278B1/en
Priority to US09/722,278 priority patent/US6480262B1/en
Priority to US09/722,515 priority patent/US6509954B1/en
Priority to US10/382,874 priority patent/US6795169B2/en
Application granted granted Critical
Publication of JP3385718B2 publication Critical patent/JP3385718B2/en
Priority to US10/920,294 priority patent/US7023527B2/en
Priority to US11/101,553 priority patent/US7088425B2/en
Priority to US11/471,658 priority patent/US7372543B2/en
Priority to US11/797,605 priority patent/US7372544B2/en
Priority to US12/078,863 priority patent/US7956984B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Abstract

PURPOSE:To perform projection alignment with excellent optical performance without deteriorating throughput even when an exposure area is large. CONSTITUTION:An aligner which aligns the image of a mask 10 on a plate 30 by projection while moving the mask 10 and the plate 30 is permitted to form the unmagnified erected image of the mask on the plate, and is provided with a first projection optical system 35a and a second projection optical system which are the telecentric systems on the both sides. The first and the second projection optical systems are provided with dioptric systems G1 and G2 for positive refraction and flat plane reflecting planes M1 and M1 which reflect beams from the dioptric systems again to the dioptric systems.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、第１の物体と第２の物
体とを移動させつつ露光を行う、いわゆる走査型の露光
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called scanning type exposure apparatus for performing exposure while moving a first object and a second object.

【０００２】[0002]

【従来の技術】近年、ワープロ、パソコン、テレビ等に
用いられる表示素子として、液晶表示パネルが多用され
るようになった。このような液晶表示パネルの製造の際
には、ガラス基板上に透明薄膜電極をフォトリソグラフ
ィの手法で所望の形状にパターンニングすることが行わ
れている。2. Description of the Related Art In recent years, liquid crystal display panels have been widely used as display elements used in word processors, personal computers, televisions and the like. In manufacturing such a liquid crystal display panel, a transparent thin film electrode is patterned on a glass substrate into a desired shape by a photolithography technique.

【０００３】このようなリソグラフィのための装置とし
て、例えばミラープロジエクションタイプのアライナー
が知られている。そして、最近では、液晶表示パネルの
大型化が要望されており、上述の如きアライナーにおい
ても、露光領域の拡大化が望まれている。As an apparatus for such lithography, for example, a mirror projection type aligner is known. Recently, there has been a demand for a larger liquid crystal display panel, and for the aligner as described above, there is a demand for a larger exposure area.

【０００４】[0004]

【発明が解決しようとする課題】上述の如きアライナー
型の投影露光装置においては、小さな露光領域を継ぐこ
とによって、露光領域を拡大させていた。このような場
合、大きな露光領域を得るためには、多数回の露光を行
う必要があるため、スループット（単位時間当たりの露
光できる基板の量）の低下を招いていた。さらに、隣合
う露光領域間の継ぎ精度を高める必要があるため、投影
光学系の倍率誤差やディストーションを０に近づける必
要があると共に、アライメント精度の大幅な向上を図る
必要があり、装置のコスト高を招く問題点がある。In the aligner type projection exposure apparatus as described above, the exposure area is enlarged by continuing the small exposure area. In such a case, in order to obtain a large exposure area, it is necessary to perform a large number of exposures, resulting in a reduction in throughput (the amount of substrates that can be exposed per unit time). Further, since it is necessary to increase the joint accuracy between the adjacent exposure areas, it is necessary to bring the magnification error and distortion of the projection optical system close to 0, and it is necessary to significantly improve the alignment accuracy, which increases the cost of the apparatus. There is a problem that causes.

【０００５】また、露光領域を拡大させるためには、投
影光学系を大型化して、大きな露光領域を一括して露光
を行う手法が考えられる。しかしながら、この場合に
は、投影光学系を構成する大型の光学素子を非常に高精
度に製作する必要があり、製造コストの増大と露光装置
全体の大型化とを招く問題点がある。また、投影光学系
の大型化により、光学的な収差も増大する問題点があ
る。In order to enlarge the exposure area, a method of enlarging the projection optical system so that the large exposure area is collectively exposed can be considered. However, in this case, it is necessary to manufacture a large-sized optical element that constitutes the projection optical system with extremely high accuracy, which causes a problem of increasing manufacturing cost and increasing the size of the entire exposure apparatus. In addition, there is a problem that the optical aberration is increased due to the enlargement of the projection optical system.

【０００６】そこで、本発明は、露光領域が大きな場合
においても、スループットを低下させず良好なる光学性
能のもとで投影露光を行うことのできる露光装置を提供
することを目的とする。Therefore, it is an object of the present invention to provide an exposure apparatus capable of performing projection exposure under good optical performance without lowering throughput even when the exposure area is large.

【０００７】[0007]

【課題を解決するための手段】上述の目的を達成するた
めに、本発明による露光装置は、第１の物体と第２の物
体とを移動させつつ、前記第１の物体の像を前記第２の
物体上へ投影露光するするものであって、第１の物体の
等倍の正立正像を第２の物体上に形成し、かつ両側テレ
セントリックである第１及び第２投影光学系を有する。
そして、第１及び第２投影光学系は、正屈折力の屈折光
学系と、この屈折光学系からの光を再び屈折光学系へ向
けて反射する平面反射面とを有するように構成される。In order to achieve the above object, an exposure apparatus according to the present invention moves an image of the first object while moving an image of the first object and a second object. Projecting and exposing onto a second object, forming an equal-magnification erect image of the first object on the second object, and having first and second projection optical systems which are telecentric on both sides. .
The first and second projection optical systems are configured to have a refracting optical system having a positive refracting power and a plane reflecting surface that reflects light from the refracting optical system toward the refracting optical system again.

【０００８】なお、本発明においては、正立正像とは、
上下左右の横倍率が正となる像を指し、両側テレセント
リックとは、物体側及び像側においてテレセントリック
であることを指す。In the present invention, the erect image is
It refers to an image in which the lateral magnification in the upper, lower, left, and right is positive, and the double-sided telecentric means telecentric on the object side and the image side.

【０００９】[0009]

【作用】上述の構成の如き本発明においては、複数の投
影光学系（第１及び第２投影光学系）を組合せる構成で
あるため、個々の投影光学系の露光領域を大きくするこ
となく、大きな露光領域を得ることができる。これによ
り、投影光学系を小型化することができるため、高精度
な投影光学系の製造が容易となる利点がある。また、投
影光学系を構成する各光学素子が小型であるため、絶対
的な光学的収差の発生量が低減する。従って、良好な光
学性能のもとでの投影露光が実現できる。In the present invention having the above-mentioned structure, since a plurality of projection optical systems (first and second projection optical systems) are combined, it is possible to increase the exposure area of each projection optical system without increasing the exposure area. A large exposure area can be obtained. As a result, the projection optical system can be downsized, which has the advantage of facilitating the manufacture of a highly accurate projection optical system. In addition, since each optical element forming the projection optical system is small, the amount of absolute optical aberration generated is reduced. Therefore, projection exposure with good optical performance can be realized.

【００１０】さらに、本発明においては、大きな露光領
域を一回の露光で得ることができるため、スループット
が高いという利点がある。Further, according to the present invention, since a large exposure area can be obtained by one exposure, there is an advantage that throughput is high.

【００１１】[0011]

【実施例】以下、図面を参照して本発明による実施例を
説明する。図１は、本発明による露光装置の投影光学系
を概略的に示す図である。図１では、所定の回路パター
ンが形成されたマスク１０と、レジストが塗布されたガ
ラス基板であるプレート３０とが搬送される方向（走査
方向）をＸ軸、マスク１０の平面内でＸ軸と直交する方
向をＹ軸、マスク１０の法線方向をＺ軸にとっている。
なお、図１においては、第１投影光学系３５ａのみを図
示している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram schematically showing a projection optical system of an exposure apparatus according to the present invention. In FIG. 1, the direction in which the mask 10 on which a predetermined circuit pattern is formed and the plate 30 which is a glass substrate coated with a resist are conveyed is the X axis, and the X axis is in the plane of the mask 10. The orthogonal direction is the Y axis, and the normal direction of the mask 10 is the Z axis.
Note that, in FIG. 1, only the first projection optical system 35a is shown.

【００１２】図１において、第１投影光学系３５ａは、
マスク１０上の回路パターンの１次像を形成する第１部
分光学系Ｋ1 と、この１次像からの光に基づいてプレー
ト３０上に回路パターンの正立正像（２次像）を形成す
る第２部分光学系Ｋ2 とを有する。第１部分光学系Ｋ1
は、マスク１０の面（ＸＹ平面）に対して４５°で斜設
された反射面Ｐ1a，Ｐ1bを持つ直角プリズムＰ1 と、正
レンズ群Ｌ11、負レンズ群Ｌ12及び正レンズ群Ｌ13を有
し全体として正屈折力の屈折光学系Ｇ1 と、平面反射面
Ｍ1 とを有する。In FIG. 1, the first projection optical system 35a is
A first partial optical system K 1 that forms a primary image of the circuit pattern on the mask 10 and an erect normal image (secondary image) of the circuit pattern on the plate 30 based on the light from the primary image. And a second partial optical system K 2 . First partial optical system K 1
Is a right-angle prism P 1 having reflecting surfaces P 1a and P 1b obliquely arranged at 45 ° with respect to the surface of the mask 10 (XY plane), a positive lens group L 11 , a negative lens group L 12, and a positive lens group. L 13 has a refractive optical system G 1 having a positive refracting power as a whole and a plane reflecting surface M 1 .

【００１３】また、第２部分光学系Ｋ2 は、プレート３
０の面（ＸＹ平面）に対して４５°で斜設された反射面
Ｐ2a，Ｐ2bを持つ直角プリズムＰ2 と、正屈折力のレン
ズ群Ｌ21、負屈折力のレンズ群Ｌ22及び正屈折力のレン
ズ群Ｌ23を有し全体として正屈折力の屈折光学系Ｇ
2 と、平面反射面Ｍ2 とを有する。ここで、第１部分光
学系Ｋ1 により形成される回路パターンの１次像形成位
置には、視野絞りＦＳが設けられる。The second partial optical system K 2 includes a plate 3
A right-angle prism P 2 having reflecting surfaces P 2a and P 2b obliquely arranged at an angle of 45 ° with respect to the 0 plane (XY plane), a lens group L 21 having a positive refractive power, a lens group L 22 having a negative refractive power, and A refractive optical system G having a positive refracting power as a whole and having a lens unit L 23 having a positive refracting power
2 and a plane reflecting surface M 2 . Here, the field stop FS is provided at the primary image forming position of the circuit pattern formed by the first partial optical system K 1 .

【００１４】さて、マスク１０上の回路パターンは、照
明光学系４０により、ほぼ均一の照度で照明されてお
り、回路パターンを介した光は、直角プリズムＰ1 の反
射面Ｐ 1aにより９０°偏向し、正レンズ群Ｌ11、負レン
ズ群Ｌ12及び正レンズ群Ｌ13を順に介して平面反射面Ｍ
1 に達する。ここで、平面反射面Ｍ1 は、正レンズ群Ｌ
11、負レンズ群Ｌ12及び正レンズ群Ｌ13から構成される
屈折光学系Ｇ1 のほぼ後側焦点位置に配置される。すな
わち、平面反射面Ｍ1 は、第１部分光学系Ｋ1 の瞳面に
位置している。なお、屈折光学系Ｇ1 の後側焦点位置と
は、直角プリズムＰ1 側を前側とし、平面反射面Ｍ1 側
を後側とした際の後側焦点の位置である。The circuit pattern on the mask 10 is illuminated.
Illuminated by the bright optical system 40 with a substantially uniform illuminance.
The light passing through the circuit pattern is reflected by the right-angle prism P.1Anti
Surface P 1aDeflection by 90 ° by the positive lens unit L11, Negative Ren
Group L12And the positive lens unit L13Through the order of the plane reflecting surface M
1Reach Here, the plane reflection surface M1Is the positive lens unit L
11, Negative lens group L12And the positive lens unit L13Consists of
Refractive optical system G1It is arranged at a substantially rear focus position of the. sand
Wow, plane reflective surface M1Is the first partial optical system K1On the pupil's face
positioned. The refractive optical system G1And the rear focus position
Is a right-angle prism P1The side is the front side, and the plane reflection surface M1~ side
Is the position of the rear focal point when is the rear side.

【００１５】次に、平面反射面Ｍ1 にて反射された光
は、正レンズ群Ｌ13、負レンズ群Ｌ12及び正レンズ群Ｌ
11を介して直角プリズムＰ1 の反射面Ｐ1bへ向かう。こ
こで、正レンズ群Ｌ11側から入射して平面反射面Ｍ1 へ
向かう光束が受ける屈折力と、平面反射面Ｍ1 側から入
射して、正レンズ群Ｌ11から射出される光束が受ける屈
折力とは、ほぼ同じである。Next, the light reflected by the plane reflecting surface M 1 is the positive lens group L 13 , the negative lens group L 12, and the positive lens group L 12.
It goes toward the reflecting surface P 1b of the rectangular prism P 1 via 11 . Here, the refracting power received by the light flux entering from the positive lens group L 11 side toward the plane reflecting surface M 1 and the light flux entering from the plane reflecting surface M 1 side and exiting from the positive lens group L 11 are received. The refractive power is almost the same.

【００１６】そして、直角プリズムＰ1 の反射面Ｐ1bに
達する光は、この反射面Ｐ1bにてほぼ９０°偏向して、
視野絞りＦＳの位置に回路パターンの１次像を形成す
る。この１次像においては、Ｘ方向における横倍率はほ
ぼ＋１倍であり、かつＹ方向における横倍率がほぼ−１
倍である。１次像からの光は、第２部分光学系Ｋ2 を介
して、プレート３０上に回路パターンの２次像を形成す
る。ここで、この２次像のＸ方向及びＹ方向における横
倍率はほぼ＋１倍である。すなわち、プレート３０上に
形成される２次像は、正立正像である。なお、第２部分
光学系Ｋ2 の有する機能は、第１部分光学系Ｋ1 の機能
と同等であるため、ここでは詳しい説明を省略する。The light reaching the reflecting surface P 1b of the right-angle prism P 1 is deflected by about 90 ° at the reflecting surface P 1b ,
A primary image of the circuit pattern is formed at the position of the field stop FS. In this primary image, the lateral magnification in the X direction is approximately +1 and the lateral magnification in the Y direction is approximately -1.
Double. The light from the primary image forms a secondary image of the circuit pattern on the plate 30 via the second partial optical system K 2 . Here, the lateral magnification of the secondary image in the X and Y directions is approximately +1. That is, the secondary image formed on the plate 30 is an erect image. The function of the second partial optical system K 2 is the same as the function of the first partial optical system K 1 , and therefore detailed description is omitted here.

【００１７】従って、プレート３０上に形成される回路
パターンの像が正立正像であるため、マスク１０とプレ
ート３０とを一体に同一方向に移動させれば、走査露光
を行うことができる。なお、上述の第１部分光学系Ｋ1
においては、屈折光学系Ｇ1 の後側焦点位置に平面反射
面Ｍ1 が配置されているため、マスク１０側及び視野絞
りＦＳ側においてテレセントリックとなる。また、第２
部分光学系Ｋ2 においても、屈折光学系Ｇ2 の後側焦点
位置に平面反射鏡Ｍ2 が配置されているため、視野絞り
ＦＳ側及びプレート３０側においてテレセントリックと
なる。従って、第１投影光学系３５ａは、両側（マスク
１０側及びプレート３０側）テレセントリック光学系で
ある。Therefore, since the image of the circuit pattern formed on the plate 30 is an erect image, scanning exposure can be performed by moving the mask 10 and the plate 30 integrally in the same direction. Incidentally, the above-mentioned first partial optical system K 1
In the above, since the plane reflecting surface M 1 is arranged at the rear focal position of the refractive optical system G 1 , it is telecentric on the mask 10 side and the field stop FS side. Also, the second
Also in the partial optical system K 2 , since the plane reflecting mirror M 2 is arranged at the rear focal position of the refractive optical system G 2 , it is telecentric on the field stop FS side and the plate 30 side. Therefore, the first projection optical system 35a is a telecentric optical system on both sides (mask 10 side and plate 30 side).

【００１８】次に、図１の第１投影光学系３５ａの露光
領域について、図２を参照して説明する。図２(a) は、
マスク１０上のＸＹ平面内における第１投影光学系３５
ａの有効視野領域と視野との関係を示す平面図であり、
図２(b) は、視野絞りＦＳの平面図であり、図２(c)
は、第１投影光学系３５ａの有効露光領域と露光領域と
の関係を示す平面図である。Next, the exposure area of the first projection optical system 35a in FIG. 1 will be described with reference to FIG. Figure 2 (a) shows
First projection optical system 35 in the XY plane on the mask 10
FIG. 6 is a plan view showing a relationship between an effective visual field area of a and a visual field;
FIG. 2B is a plan view of the field stop FS, and FIG.
[Fig. 4] is a plan view showing a relationship between an effective exposure area and an exposure area of the first projection optical system 35a.

【００１９】図２(a) において、第１投影光学系３５ａ
の取り得る最大の視野領域である有効視野領域は、マス
ク１０上において、破線で囲まれる半円状の領域であ
る。ここで、図２(b) に示す如く、視野絞りＦＳの開口
部ＦＳａの形状が台形状である場合には、マスク１０上
における第１投影光学系３５ａの視野領域１０ａは、開
口部ＦＳａの形状と相似形の台形状となる。言うまでも
なく、この視野領域１０ａは、有効視野領域３５ａ内に
含まれるものである。In FIG. 2A, the first projection optical system 35a
The effective visual field area, which is the maximum possible visual field area, is a semicircular area surrounded by broken lines on the mask 10. Here, as shown in FIG. 2B, when the shape of the opening FSa of the field stop FS is trapezoidal, the visual field region 10a of the first projection optical system 35a on the mask 10 has the shape of the opening FSa. It becomes a trapezoid similar to the shape. Needless to say, this visual field area 10a is included in the effective visual field area 35a.

【００２０】また、図２(c) に示す如く、プレート３０
上における第１投影光学系３５ａと取り得る最大の露光
領域である有効露光領域は、破線で囲まれる半円状の領
域となる。ここで、視野絞りＦＳの開口部ＦＳａによ
り、プレート３０上での露光領域３０ａは、開口部ＦＳ
ａと相似形の台形状に規定される。この露光領域３０ａ
も有効露光領域の内に含まれる。このとき、台形状の露
光領域３０ａにおいては、Ｘ方向における台形の高さが
スリット巾となり、Ｙ方向の端部における斜辺の部分
（Ｘ方向の高さが変化している部分）がオーバーラップ
領域（隣合う露光領域とＹ方向において重なる領域）と
なる。Further, as shown in FIG. 2 (c), the plate 30
The effective exposure area, which is the maximum exposure area that can be taken with the first projection optical system 35a, is a semicircular area surrounded by a broken line. Here, due to the opening FSa of the field stop FS, the exposure region 30a on the plate 30 is exposed to the opening FS.
It is defined as a trapezoid similar to a. This exposure area 30a
Is also included in the effective exposure area. At this time, in the trapezoidal exposure region 30a, the height of the trapezoid in the X direction is the slit width, and the oblique side portion (the portion where the height in the X direction changes) at the end portion in the Y direction is the overlap region. (A region overlapping the adjacent exposure region in the Y direction).

【００２１】次に、図３を参照して、本発明による露光
装置の全体的な構成について説明する。図３は、本発明
による露光装置の一例を模式的に示す図である。なお、
図３においては、図１に示す照明光学系４０と、マスク
１０を支持するマスクステージと、プレート３０を支持
するプレートステージとは、図示省略している。図３に
おいて、マスク１０とプレート３０との間には、Ｙ方向
に沿って４本の投影光学系３５ａ〜３５ｄと、３本の投
影光学系３５ｅ〜３５ｇが配列されている。ここで、投
影光学系３５ａ〜３５ｄと、投影光学系３５ｅ〜３５ｇ
とは、Ｘ方向において異なる位置で配列されている。な
お、各投影光学系３５ａ〜３５ｇの構成は、図１で説明
した第１投影光学系３５ａの構成と同一であるため、こ
こでは説明を省略する。Next, the overall structure of the exposure apparatus according to the present invention will be described with reference to FIG. FIG. 3 is a diagram schematically showing an example of the exposure apparatus according to the present invention. In addition,
In FIG. 3, the illumination optical system 40 shown in FIG. 1, the mask stage that supports the mask 10, and the plate stage that supports the plate 30 are not shown. In FIG. 3, between the mask 10 and the plate 30, four projection optical systems 35a to 35d and three projection optical systems 35e to 35g are arranged along the Y direction. Here, the projection optical systems 35a to 35d and the projection optical systems 35e to 35g.
And are arranged at different positions in the X direction. Since the configuration of each projection optical system 35a to 35g is the same as the configuration of the first projection optical system 35a described in FIG. 1, description thereof will be omitted here.

【００２２】ここで、各投影光学系３５ａ〜３５ｇによ
る視野領域１０ａ〜１０ｇは、それぞれ台形状であり、
投影光学系３５ａ〜３５ｄによる視野領域１０ａ〜１０
ｄと、投影光学系３５ｅ〜３５ｇによる視野領域１０ｅ
〜１０ｇとは、それぞれ短辺側が対向している。従っ
て、各投影光学系３５ａ〜３５ｇによりプレート３０上
に形成される露光領域３０ａ〜３０ｇは、各々台形状と
なる。ここで、各露光領域３０ａ〜３０ｇは、走査方向
（Ｘ方向）の長さの和が走査直交方向（Ｙ方向）のどの
位置においても常に一定となっている。具体的には、露
光領域３０ａ〜３０ｇのそれぞれのオーバーラップ領域
がＸ方向において重なるように、各投影光学系を配置し
ている。The visual field regions 10a to 10g formed by the projection optical systems 35a to 35g are trapezoidal,
Field-of-view areas 10a to 10 formed by the projection optical systems 35a to 35d
d and the visual field region 10e formed by the projection optical systems 35e to 35g.
The short sides are opposed to 10 to 10 g, respectively. Therefore, the exposure regions 30a to 30g formed on the plate 30 by the projection optical systems 35a to 35g are trapezoidal. Here, in each of the exposure regions 30a to 30g, the sum of the lengths in the scanning direction (X direction) is always constant at any position in the scanning orthogonal direction (Y direction). Specifically, the respective projection optical systems are arranged so that the respective overlapping areas of the exposure areas 30a to 30g overlap in the X direction.

【００２３】露光領域３０ａ〜３０ｇには、視野領域１
０ａ〜１０ｇの正立正像がそれぞれ形成されるため、マ
スク１０とプレート３０とを走査方向に沿って走査する
ことにより、プレート３０上には、マスク１０の像が順
次形成される。なお、図３では、７本の投影光学系３５
ａ〜３５ｇを用いているが、本発明による露光装置で
は、投影光学系の本数は７本に限られず、２本（第１投
影光学系及び第２投影光学系）以上の投影光学系が設け
られれば良い。In the exposure areas 30a to 30g, the visual field area 1
Since erect images of 0a to 10g are formed, images of the mask 10 are sequentially formed on the plate 30 by scanning the mask 10 and the plate 30 in the scanning direction. In FIG. 3, the seven projection optical systems 35
Although a to 35 g are used, the number of projection optical systems is not limited to seven in the exposure apparatus according to the present invention, and two or more projection optical systems (first projection optical system and second projection optical system) are provided. I wish I could.

【００２４】また、重力の影響によるマスク１０及びプ
レート３０の撓みを低減させるためには、走査直交方向
（Ｙ方向）を鉛直方向とすることが好ましい。なお、走
査方向（Ｘ方向）を鉛直方向とすることも考えられる
が、このときには、重力に逆らって走査を行うことにな
るため、マスクステージ及びプレートステージにかかる
負荷が増大するため好ましくない。Further, in order to reduce the bending of the mask 10 and the plate 30 due to the influence of gravity, it is preferable that the scanning orthogonal direction (Y direction) is the vertical direction. The scanning direction (X direction) may be set to the vertical direction, but at this time, scanning is performed against gravity, which is not preferable because the load on the mask stage and the plate stage increases.

【００２５】図１〜図３に示す実施例においては、投影
光学系として、２組の光学系（第１部分光学系Ｋ1 及び
第２部分光学系Ｋ2 ）を組み合わせる構成としている
が、マスク１０の等倍の正立正像が形成できる光学系で
あれば、２組の光学系の組合せに限られない。以下の図
４を参照して、投影光学系の変形例を説明する。図４
は、投影光学系の変形例の構成を概略的に示す図であ
る。なお、図４においては、第１投影光学系のみを図示
している。In the embodiments shown in FIGS. 1 to 3, the projection optical system has a structure in which two sets of optical systems (first partial optical system K 1 and second partial optical system K 2 ) are combined. The optical system is not limited to the combination of two sets of optical systems as long as it is an optical system capable of forming an erect image of 10 times the normal size. A modified example of the projection optical system will be described with reference to FIG. 4 below. Figure 4
FIG. 9 is a diagram schematically showing a configuration of a modified example of the projection optical system. Note that, in FIG. 4, only the first projection optical system is shown.

【００２６】図４において、第１投影光学系は、マスク
１０面（ＸＹ平面）に対して４５°で斜設された反射面
１１ａ，１１ｂを持つ直角プリズム１１と、全体として
正屈折力を持つ屈折光学系３６と、この屈折光学系３６
の後側焦点位置に配置された反射部材３７とを有する。
ここで、屈折光学系３６は、図１に示す第１投影光学系
の屈折光学系Ｇ1 と同等の機能を有している。また、反
射部材３７は、Ｚ方向に稜線を持つ直角ダハ反射面３７
ａ，３７ｂを有し、この稜線と屈折光学系３６の後側焦
点位置とが一致するように配置されている。In FIG. 4, the first projection optical system has a right-angle prism 11 having reflecting surfaces 11a and 11b obliquely arranged at 45 ° with respect to the mask 10 surface (XY plane), and has a positive refracting power as a whole. Refractive optical system 36 and this refractive optical system 36
And a reflecting member 37 arranged at the rear focal position.
Here, the refraction optical system 36 has the same function as the refraction optical system G 1 of the first projection optical system shown in FIG. Further, the reflecting member 37 is a right-angled roof reflecting surface 37 having a ridgeline in the Z direction.
a and 37b, which are arranged so that the ridge line and the rear focal position of the refracting optical system 36 coincide with each other.

【００２７】さて、図示なき照明光学系により照明され
たマスク１０からの光は、反射面１１ａにより９０°偏
向されて、屈折光学系３６に入射する。屈折光学系３６
を介した光は、反射部材３７の直角ダハ反射面３７ａ，
３７ｂにて２回反射され、再び屈折光学系３６に入射す
る。屈折光学系３６を介した直角ダハ反射面３７ａ，３
７ｂからの光は、直角プリズム１１の反射面１１ｂによ
り９０°偏向された後に、プレート３０上に達する。直
角ダハ反射面３７ａ、３７ｂによって、Ｙ方向における
像の向きが逆転されるため、プレート３０上には、マス
ク１０の等倍の正立正像が形成される。なお、反射部材
３７が屈折光学系３６の後側焦点位置に配置されるた
め、第１投影光学系は、両側テレセントリック光学系と
なる。The light from the mask 10 illuminated by the illumination optical system (not shown) is deflected by 90 ° by the reflecting surface 11a and enters the refracting optical system 36. Refractive optical system 36
The light passing through is reflected by the right-angled roof reflection surface 37a of the reflection member 37,
The light is reflected twice at 37b and again enters the refracting optical system 36. Right angle roof reflecting surfaces 37a, 3 through the refracting optical system 36
The light from 7b reaches the plate 30 after being deflected by 90 ° by the reflecting surface 11b of the rectangular prism 11. Since the image orientation in the Y direction is reversed by the right-angled roof reflection surfaces 37a and 37b, an erect image of the same size as the mask 10 is formed on the plate 30. Since the reflecting member 37 is arranged at the rear focal point of the refracting optical system 36, the first projection optical system is a double-sided telecentric optical system.

【００２８】上記の変形例においては、直角ダハ反射面
３７ａ，３７ｂを屈折光学系３６の後側焦点位置に配置
しているが、このようなダハ反射面を光路を偏向させる
反射面に設けても良い。以下、図５を参照して、説明す
る。図５は、投影光学系の変形例を示す図である。な
お、図５においても、投影光学系は、第１投影光学系の
みを図示している。In the above modification, the right-angle roof reflecting surfaces 37a and 37b are arranged at the rear focal point of the refracting optical system 36, but such roof reflecting surfaces are provided on the reflecting surface for deflecting the optical path. Is also good. This will be described below with reference to FIG. FIG. 5 is a diagram showing a modification of the projection optical system. Note that, in FIG. 5 also, only the first projection optical system is illustrated as the projection optical system.

【００２９】図５において、第１投影光学系は、マスク
１０面（ＸＹ平面）に対して４５°で斜設された反射面
１２と、全体として正屈折力の屈折光学系３６と、この
屈折光学系の後側焦点位置に配置された平面反射鏡３８
と、ダハ反射面を持つ反射部材１３とを有する。なお、
屈折光学系３６は、図４の屈折光学系と同じものである
ため、ここでは説明を省略する。In FIG. 5, the first projection optical system includes a reflecting surface 12 obliquely arranged at 45 ° with respect to the mask 10 surface (XY plane), a refracting optical system 36 having a positive refracting power as a whole, and this refracting power. Planar reflecting mirror 38 arranged at the rear focal position of the optical system
And a reflecting member 13 having a roof reflecting surface. In addition,
The refracting optical system 36 is the same as the refracting optical system of FIG. 4, and therefore its description is omitted here.

【００３０】反射部材１３は、例えば図６に示す如く、
互いに直交する２つの反射面（ダハ反射面）１３ａ，１
３ｂを有する。ここで、２つ反射面１３ａ，１３ｂの稜
線１３ｃは、ＸＹ平面に対して４５°の傾きを持つ。図
５に戻って、マスク１０からの光は、反射面１２により
９０°偏向され、屈折光学系３６を介して平面反射面３
８に達する。平面反射面３８にて反射された光は、再び
屈折光学系３６を介して反射部材１３に達する。反射部
材１３に達した光は、９０°偏向されてプレート３０へ
向けられ、かつＹ方向における左右が反転される。従っ
て、プレート３０上には、マスク１０の等倍の正立正像
が形成される。The reflecting member 13 is, for example, as shown in FIG.
Two reflective surfaces (Dach reflective surfaces) 13a, 1 that are orthogonal to each other
With 3b. Here, the ridgeline 13c of the two reflecting surfaces 13a and 13b has an inclination of 45 ° with respect to the XY plane. Returning to FIG. 5, the light from the mask 10 is deflected by 90 ° by the reflecting surface 12, and passes through the refracting optical system 36 to obtain the plane reflecting surface 3
Reach eight. The light reflected by the flat reflecting surface 38 reaches the reflecting member 13 again via the refracting optical system 36. The light reaching the reflecting member 13 is deflected by 90 ° and directed toward the plate 30, and the left and right in the Y direction are inverted. Therefore, an erect image of the same size as the mask 10 is formed on the plate 30.

【００３１】図５に示す変形例では、屈折光学系３６と
プレート３０との間の光路中にダハ反射面が存在してい
る。マスク１０と屈折光学系との間の光路中にダハ反射
面を設ける構成でも良い。尚、ダハ反射面の誤差による
悪影響を考慮すると、ダハ反射面は、プレート３０に近
い側に設けられることが好ましい。また、図５の変形例
では、反射部材１３が平面表面反射鏡により構成されて
いるが、直角ダハプリズムを用いる構成をとることも可
能である。In the modification shown in FIG. 5, a roof reflection surface exists in the optical path between the refractive optical system 36 and the plate 30. A configuration may be used in which a roof reflecting surface is provided in the optical path between the mask 10 and the refracting optical system. In consideration of the adverse effect of the error of the roof reflecting surface, the roof reflecting surface is preferably provided on the side close to the plate 30. Further, in the modification of FIG. 5, the reflecting member 13 is composed of a flat surface reflecting mirror, but it is also possible to adopt a structure using a right angle roof prism.

【００３２】なお、図４、図５に示す変形例において
は、投影光学系の光路中に視野絞りを配置することがで
きないが、このときには、照明光学系の光路中に視野絞
りを配置すれば良い。また、上述の実施例においては、
露光領域の形状が台形状であるが、露光領域の形状とし
ては、台形状に限られない。例えば図７に示す如く、露
光領域が円弧状であっても良い。図７(a) は、マスク１
０上のＸＹ平面内における第１投影光学系の有効視野領
域と円弧状の視野との関係を示す平面図であり、図７
(b) は、円弧状の開口部を持つ視野絞りの平面図であ
り、図７(c) は、第１投影光学系の有効露光領域と円弧
状の露光領域との関係を示す平面図である。In the modified examples shown in FIGS. 4 and 5, the field stop cannot be arranged in the optical path of the projection optical system, but at this time, if the field stop is arranged in the optical path of the illumination optical system. good. Also, in the above embodiment,
Although the shape of the exposure area is trapezoidal, the shape of the exposure area is not limited to the trapezoidal shape. For example, as shown in FIG. 7, the exposure area may be arcuate. FIG. 7A shows the mask 1
7 is a plan view showing the relationship between the effective visual field area of the first projection optical system and the arcuate visual field in the XY plane on 0. FIG.
FIG. 7B is a plan view of a field stop having an arcuate opening, and FIG. 7C is a plan view showing the relationship between the effective exposure area of the first projection optical system and the arcuate exposure area. is there.

【００３３】図７(a) において、第１投影光学系の有効
視野領域（第１投影光学系の取り得る最大の視野領域）
は、マスク１０上において、破線で囲まれる半円状の領
域である。ここで、図７(b) に示す如く、視野絞りの開
口部の形状が円弧状である場合には、マスク１０上にお
ける第１投影光学系の視野領域は、開口部の形状と相似
形の円弧状となる。なお、この円弧は、曲率中心がＸ方
向で異なる２つの同一曲率半径の部分円の輪郭を持ち、
Ｙ方向の端部において直角三角形状の輪郭を持つもので
ある。また、図７(c) に示す如く、プレート３０上にお
ける第１投影光学系の有効露光領域（第１投影光学系の
取り得る最大の露光領域）は、破線で囲まれる半円状の
領域となる。ここで、視野絞りの円弧状の開口部によ
り、プレート３０上での露光領域は、開口部と相似形の
円弧状に規定される。この円弧状の露光領域は、第１投
影光学系の有効露光領域内となる。このとき、円弧状の
露光領域においては、部分円の輪郭同士の曲率中心のＸ
方向における間隔がスリット巾になり、直角三角形状の
輪郭の部分がオーバーラップ領域（隣合う露光領域とＹ
方向において重なる領域）となる。In FIG. 7A, the effective visual field area of the first projection optical system (the maximum visual field area that the first projection optical system can take)
Is a semicircular region surrounded by a broken line on the mask 10. Here, as shown in FIG. 7B, when the shape of the opening of the field stop is arcuate, the field area of the first projection optical system on the mask 10 is similar to the shape of the opening. It becomes an arc shape. In addition, this arc has the contours of two partial circles having the same radius of curvature whose center of curvature differs in the X direction,
The end portion in the Y direction has a right triangle shape. Further, as shown in FIG. 7C, the effective exposure area of the first projection optical system on the plate 30 (the maximum exposure area that the first projection optical system can take) is a semicircular area surrounded by a broken line. Become. Here, the arcuate opening of the field stop defines the exposure region on the plate 30 in an arcuate shape similar to the opening. This arc-shaped exposure area is within the effective exposure area of the first projection optical system. At this time, in the arc-shaped exposure area, X of the center of curvature between the contours of the partial circles is
The interval in the direction becomes the slit width, and the outline of the right-angled triangular shape overlaps the overlap area (adjacent exposure area and Y
Area that overlaps in the direction).

【００３４】なお、図７に示すように円弧状の露光領域
とする場合には、投影光学系における像高がほぼ一定の
箇所を用いることになる。このときには、投影光学系
は、所定の像高における収差補正がなされていれば良い
ため、光学設計が簡単になる利点もある。また、上述の
実施例においては、屈折光学系の屈折力配置が正・負・
正であるが、屈折光学系の屈折力配置としてはこれに限
られることはいうまでもない。In the case of forming an arc-shaped exposure area as shown in FIG. 7, a location where the image height is almost constant in the projection optical system is used. At this time, the projection optical system only needs to be corrected for aberrations at a predetermined image height, which has an advantage of simplifying optical design. Further, in the above-described embodiment, the refractive power arrangement of the refractive optical system is positive / negative /
Although positive, it goes without saying that the refractive power arrangement of the refractive optical system is not limited to this.

【００３５】このように、上述の実施例によれば、複数
の投影光学系によって、走査方向と直交する方向におい
て幅の広い露光領域を形成できるため、個々の投影光学
系の大型化を図ることなく、露光領域の大画面化に対応
できる。さらに、上記実施例では、投影光学系が小型化
されるため、光学系の大型化に伴う収差の増大を低減で
きる利点がある。また、上記実施例では、露光領域を継
ぐことなく、一回の走査露光で大画面に対する露光がで
きるため、スループットの向上を達成でき、かつ画面の
継ぎ目を無くすことができる利点がある。As described above, according to the above-described embodiment, since a plurality of projection optical systems can form a wide exposure area in the direction orthogonal to the scanning direction, it is possible to increase the size of each projection optical system. It is possible to deal with larger screens in the exposure area. Further, in the above-mentioned embodiment, since the projection optical system is downsized, there is an advantage that it is possible to reduce an increase in aberration due to an increase in size of the optical system. Further, in the above-described embodiment, since a large screen can be exposed by one scanning exposure without connecting the exposure area, there is an advantage that throughput can be improved and the seam of the screen can be eliminated.

【００３６】[0036]

【発明の効果】以上の通り、本発明によれば、露光領域
が大きな場合においても、スループットを低下させず良
好なる光学性能のもとで投影露光を行うことのできる露
光装置が提供できる。As described above, according to the present invention, it is possible to provide an exposure apparatus capable of performing projection exposure with good optical performance without lowering throughput even when the exposure area is large.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による実施例の投影光学系の構成を示す
図である。FIG. 1 is a diagram showing a configuration of a projection optical system of an embodiment according to the present invention.

【図２】投影光学系の露光領域と視野絞りとの関係を示
す平面図である。FIG. 2 is a plan view showing a relationship between an exposure area of a projection optical system and a field stop.

【図３】本発明による露光装置の一例を概略的に示す図
である。FIG. 3 is a diagram schematically showing an example of an exposure apparatus according to the present invention.

【図４】投影光学系の変形例を示す図である。FIG. 4 is a diagram showing a modification of the projection optical system.

【図５】投影光学系の変形例を示す図である。FIG. 5 is a diagram showing a modification of the projection optical system.

【図６】ダハ反射面を持つ反射部材の構成を示す図であ
る。FIG. 6 is a diagram showing a configuration of a reflecting member having a roof reflecting surface.

【図７】視野絞りの変形例を示す平面図である。FIG. 7 is a plan view showing a modified example of the field stop.

【符号の説明】[Explanation of symbols]

Ｋ1 … 第１部分光学系、 Ｋ2 … 第２部分光学系、 Ｐ1 ，Ｐ2 … 直角プリズム、 Ｍ1 ，Ｍ2 … 平面反射鏡、 Ｇ1 ，Ｇ2 … 屈折光学系、 ＦＳ … 視野絞り、 １０ … マスク、 ３０ … プレート、K 1 ... 1st partial optical system, K 2 ... 2nd partial optical system, P 1 , P 2 ... Right angle prism, M 1 , M 2 ... Planar reflecting mirror, G 1 , G 2 ... Refracting optical system, FS ... Field of view Aperture, 10 ... Mask, 30 ... Plate,

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】第１の物体と第２の物体とを移動させつ
つ、前記第１の物体の像を前記第２の物体上へ投影露光
する露光装置において、 前記第１の物体の等倍の正立正像を前記第２の物体上に
形成し、かつ両側テレセントリックである第１及び第２
投影光学系を有し、 前記第１及び第２投影光学系は、正屈折力の屈折光学系
と、該屈折光学系からの光を再び該屈折光学系へ向けて
反射する平面反射面とを有することを特徴とする露光装
置。1. An exposure apparatus for projecting and exposing an image of the first object onto the second object while moving the first object and the second object, the magnification being equal to that of the first object. Forming an erect image of the image on the second object and being telecentric on both sides, first and second
A projection optical system is provided, and the first and second projection optical systems include a refracting optical system having a positive refracting power and a plane reflecting surface that reflects light from the refracting optical system toward the refracting optical system again. An exposure apparatus having. 【請求項２】前記第１及び第２投影光学系は、前記第１
の物体の中間像を形成する第１部分光学系と、該中間像
からの光に基づいて前記第２の物体上に前記第１の物体
の等倍の正立正像を形成する第２部分光学系と、前記中
間像が形成される位置に設けられた視野絞りとを有する
ことを特徴とする請求項１に記載の露光装置。2. The first and second projection optical systems are the first and second projection optical systems.
First partial optical system for forming an intermediate image of the object, and a second partial optical system for forming an equal-magnification erect image of the first object on the second object based on light from the intermediate image. The exposure apparatus according to claim 1, further comprising a system and a field stop provided at a position where the intermediate image is formed. 【請求項３】前記視野絞りは、略台形状の開口部を有
し、該開口部によって規定される露光領域の移動方向に
沿った長さの和は、前記移動方向と直交する方向に於い
て常に等しくなる如く規定されることを特徴とする請求
項２に記載の露光装置。3. The field stop has a substantially trapezoidal opening, and the sum of the lengths of the exposure region defined by the opening along the movement direction is orthogonal to the movement direction. The exposure apparatus according to claim 2, wherein the exposure apparatus is defined to be always equal. 【請求項４】前記第１及び第２部分光学系は、正屈折力
の屈折光学系と、該屈折光学系の後側焦点位置に配置さ
れた平面反射面を有することを特徴とする請求項２に記
載の露光装置。4. The first and second partial optical systems have a refracting optical system having a positive refracting power, and a plane reflecting surface arranged at a rear focal position of the refracting optical system. 2. The exposure apparatus according to item 2. 【請求項５】前記平面反射面は、互いに直交して設けら
れた２つの反射面であることを特徴とする請求項１に記
載の露光装置。5. The exposure apparatus according to claim 1, wherein the flat reflecting surface is two reflecting surfaces provided orthogonal to each other.
JP11680094A 1993-06-30 1994-05-30 Exposure apparatus and method Expired - Fee Related JP3385718B2 (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP11680094A JP3385718B2 (en) 1994-05-30 1994-05-30 Exposure apparatus and method
KR1019950013641A KR950033699A (en) 1994-05-30 1995-05-29 Exposure device
US08/453,538 US5729331A (en) 1993-06-30 1995-05-30 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US08/587,346 US6157497A (en) 1993-06-30 1996-01-16 Exposure apparatus
US09/173,530 US6351305B1 (en) 1993-06-30 1998-10-15 Exposure apparatus and exposure method for transferring pattern onto a substrate
US09/722,516 US6556278B1 (en) 1993-06-30 2000-11-28 Exposure/imaging apparatus and method in which imaging characteristics of a projection optical system are adjusted
US09/722,278 US6480262B1 (en) 1993-06-30 2000-11-28 Illumination optical apparatus for illuminating a mask, method of manufacturing and using same, and field stop used therein
US09/722,515 US6509954B1 (en) 1993-06-30 2000-11-28 Aperture stop having central aperture region defined by a circular ARC and peripheral region with decreased width, and exposure apparatus and method
US10/382,874 US6795169B2 (en) 1993-06-30 2003-03-07 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US10/920,294 US7023527B2 (en) 1993-06-30 2004-08-18 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US11/101,553 US7088425B2 (en) 1993-06-30 2005-04-08 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US11/471,658 US7372543B2 (en) 1993-06-30 2006-06-21 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US11/797,605 US7372544B2 (en) 1993-06-30 2007-05-04 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US12/078,863 US7956984B2 (en) 1993-06-30 2008-04-07 Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11680094A JP3385718B2 (en) 1994-05-30 1994-05-30 Exposure apparatus and method

Publications (2)

Publication Number Publication Date
JPH07326557A true JPH07326557A (en) 1995-12-12
JP3385718B2 JP3385718B2 (en) 2003-03-10

Family

ID=14695983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11680094A Expired - Fee Related JP3385718B2 (en) 1993-06-30 1994-05-30 Exposure apparatus and method

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Country Link
JP (1) JP3385718B2 (en)
KR (1) KR950033699A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723173A2 (en) * 1995-01-18 1996-07-24 Nikon Corporation Exposure apparatus
EP0809814A1 (en) * 1995-02-15 1997-12-03 Ultratech Stepper Inc. Arbitrarily wide lens array with an image field to span the width of a substrate
KR100381856B1 (en) * 2000-10-14 2003-04-26 아이티에스테크놀러지 주식회사 Scan-type optical system for exposer
JP2003207903A (en) * 2002-01-11 2003-07-25 Pentax Corp Projection aligner
JP2003255547A (en) * 2001-12-26 2003-09-10 Pentax Corp Projection aligner
JP2004029234A (en) * 2002-06-24 2004-01-29 Pentax Corp Optical system and apparatus for projection exposure
US6898025B2 (en) 2002-06-04 2005-05-24 Pentax Corporation Projection aligner and optical system therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723173A2 (en) * 1995-01-18 1996-07-24 Nikon Corporation Exposure apparatus
EP0723173A3 (en) * 1995-01-18 1997-10-08 Nippon Kogaku Kk Exposure apparatus
EP0809814A1 (en) * 1995-02-15 1997-12-03 Ultratech Stepper Inc. Arbitrarily wide lens array with an image field to span the width of a substrate
EP0809814A4 (en) * 1995-02-15 1998-05-06 Ultratech Stepper Inc Arbitrarily wide lens array with an image field to span the width of a substrate
KR100381856B1 (en) * 2000-10-14 2003-04-26 아이티에스테크놀러지 주식회사 Scan-type optical system for exposer
JP2003255547A (en) * 2001-12-26 2003-09-10 Pentax Corp Projection aligner
JP2003207903A (en) * 2002-01-11 2003-07-25 Pentax Corp Projection aligner
US6898025B2 (en) 2002-06-04 2005-05-24 Pentax Corporation Projection aligner and optical system therefor
JP2004029234A (en) * 2002-06-24 2004-01-29 Pentax Corp Optical system and apparatus for projection exposure

Also Published As

Publication number Publication date
KR950033699A (en) 1995-12-26
JP3385718B2 (en) 2003-03-10

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