JPH0732244B2 - Photo sensor - Google Patents
Photo sensorInfo
- Publication number
- JPH0732244B2 JPH0732244B2 JP61011981A JP1198186A JPH0732244B2 JP H0732244 B2 JPH0732244 B2 JP H0732244B2 JP 61011981 A JP61011981 A JP 61011981A JP 1198186 A JP1198186 A JP 1198186A JP H0732244 B2 JPH0732244 B2 JP H0732244B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoelectric conversion
- semiconductor layer
- photosensor
- transfer transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 239000010408 film Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、ファクシミリやデジタル複写機等において使
用される画像読取装置のフォトセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photo sensor of an image reading device used in a facsimile, a digital copying machine or the like.
［従来の技術］ 従来ファクシミリ，デジタル複写機や文字読取装置等の
画像情報装置において、光電変換素子としてフォトセン
サが使用されることは一般によく知られている。近年に
おいては、フォトセンサを一次元に配列して長尺ライン
センサを形成し、これを用いて高感度な画像読取を行う
こともなされている。特に高速な画像読取装置を安価に
提供するフォトセンサとして、非晶質シリコンからなる
光電変換部に同じく非晶質シリコンからなる薄膜トラン
ジスタ（以下TFTと略す）を接続した方式のセンサが提
案されている。この方式は、アレイ状に形成された光電
変換部から出力されるパラレルな信号をスイッチング用
TFTを用いてシリアル信号に変換することにより、駆動
用ICのチップ数を低減し、駆動回路の低コスト化をはか
るものである。[Prior Art] It is generally well known that a photo sensor is used as a photoelectric conversion element in an image information device such as a conventional facsimile, digital copying machine, or character reading device. In recent years, photosensors are arranged one-dimensionally to form a long line sensor, which is used to perform highly sensitive image reading. In particular, as a photosensor that provides a high-speed image reading device at low cost, a sensor of a type in which a thin film transistor (hereinafter abbreviated as TFT) also made of amorphous silicon is connected to a photoelectric conversion unit made of amorphous silicon has been proposed. . This method is for switching parallel signals output from the photoelectric conversion units formed in an array.
By converting to serial signals using TFT, the number of drive IC chips can be reduced and the cost of the drive circuit can be reduced.
しかしながら、上記のTFTを結合したフォトセンサにお
いては、光電変換部とTFTとを各々独立に作製するため
に工程数が増え、製造コストの増大、歩留りの低減等の
問題が生じ、安価なフォトセンサを提供するのは困難で
あった。However, in the above-described TFT-coupled photosensor, the number of steps is increased because the photoelectric conversion unit and the TFT are manufactured independently of each other, which causes problems such as an increase in manufacturing cost and a reduction in yield, and an inexpensive photosensor. Was difficult to provide.
［発明が解決しようとする問題点］ 本発明は、以上の如き従来技術に鑑み、TFTを結合した
フォトセンサの工程数を大幅に減少させ、安価なフォト
センサ提供することを目的とする。[Problems to be Solved by the Invention] The present invention has been made in view of the above-described conventional techniques, and an object of the present invention is to significantly reduce the number of steps of a photosensor combined with a TFT and to provide an inexpensive photosensor.
［問題点を解決するための手段］ このような目的を達成するために、本発明のフォトセン
サは透明基板上に光電変換部と該光電変換部に接続され
た転送用トランジスタ部とを有するフォトセンサであっ
て、前記光電変換部は受光部を形成するために前記透明
基板上に順次設けられた不透明な導電層、絶縁層、半導
体層、および電極を、前記転送用トランジスタ部は前記
透明基板上に順次設けられたゲート電極、絶縁層、半導
体層、および該半導体層上にオーミックコンタクト層を
介して設けられた２つの電極を有し、前記光電変換部と
前記転送用トランジスタ部の絶縁層は該光電変換部と該
転送用トランジスタ部で層厚が等しい共通の絶縁層とさ
れ、前記光電変換部と前記転送用トランジスタ部の前記
半導体層は同一で同じ導電型であることを特徴とする。[Means for Solving the Problems] In order to achieve such an object, the photosensor of the present invention is a photosensor having a photoelectric conversion part and a transfer transistor part connected to the photoelectric conversion part on a transparent substrate. In the sensor, the photoelectric conversion unit includes an opaque conductive layer, an insulating layer, a semiconductor layer, and an electrode sequentially provided on the transparent substrate to form a light receiving unit, and the transfer transistor unit is the transparent substrate. An insulating layer of the photoelectric conversion unit and the transfer transistor unit, which has a gate electrode, an insulating layer, a semiconductor layer, and two electrodes provided on the semiconductor layer with an ohmic contact layer provided in this order. Is a common insulating layer having the same layer thickness in the photoelectric conversion part and the transfer transistor part, and the semiconductor layers of the photoelectric conversion part and the transfer transistor part are the same and have the same conductivity type. Is characterized by.
［作用］ 本発明によれば、光電変換部の半導体層とTFT部の半導
体層とが同一で同じ導電型の非晶質シリコン層とされて
いるので、また、導電変換部とTFT部の絶縁層を同じ層
厚としているので、フォトセンサの作製に要する工程が
削減でき、また光電変換部とTFT部とを近接して形成で
きるので、フォトセンサアレイの集積度の向上と小型化
を達成することができる。また、光電変換部に絶縁層を
介して導電層を形成することによって、フォトセンサの
感度を一層向上させることができる。[Operation] According to the present invention, since the semiconductor layer of the photoelectric conversion part and the semiconductor layer of the TFT part are the same amorphous silicon layer of the same conductivity type, the insulation of the conductivity conversion part and the TFT part is also reduced. Since the layers have the same layer thickness, the steps required for manufacturing the photosensor can be reduced, and the photoelectric conversion part and the TFT part can be formed close to each other, so that the degree of integration of the photosensor array can be improved and the size can be reduced. be able to. In addition, the sensitivity of the photosensor can be further improved by forming a conductive layer in the photoelectric conversion portion with an insulating layer interposed therebetween.
［実施例］ 以下に図面を参照して本発明の実施例を説明する。Embodiments Embodiments of the present invention will be described below with reference to the drawings.
参考例 第１図（Ａ），（Ｂ）は本発明の理解のための参考例を
示す図で、同図（Ａ）はフォトセンサアレイの部分平面
図、同図（Ｂ）はそのＸ−Ｙ線に沿う断面図である。図
において、１はガラス基体、２はコンデンサの下層電
極、３はゲート電極、４は絶縁層、６はn+層からなるオ
ーミックコンタクト層、７は光電変換部の光導電層、８
はTFTの半導体層で、光導電層７と半導体層８は同一の
非晶質シリコン層で構成されている。10は共通電極、11
は信号取出し線である。入射光は光導電層７に入射して
電気信号に変換され、さらにTFTによってパラレル信号
からシリアル信号に変換されて出力される。Reference Example FIGS. 1 (A) and 1 (B) are views showing a reference example for understanding the present invention. FIG. 1 (A) is a partial plan view of a photosensor array, and FIG. It is sectional drawing which follows the Y line. In the figure, 1 is a glass substrate, 2 is a lower electrode of a capacitor, 3 is a gate electrode, 4 is an insulating layer, 6 is an ohmic contact layer composed of an n + layer, 7 is a photoconductive layer of a photoelectric conversion part, and 8
Is a semiconductor layer of a TFT, and the photoconductive layer 7 and the semiconductor layer 8 are composed of the same amorphous silicon layer. 10 is a common electrode, 11
Is a signal output line. The incident light enters the photoconductive layer 7 and is converted into an electric signal, and further converted from a parallel signal into a serial signal by the TFT and output.
第１図（Ａ），（Ｂ）に示したフォトセンサアレイの作
成法を第２図（Ａ）ないし（Ｄ）を参照して説明する。A method of forming the photosensor array shown in FIGS. 1A and 1B will be described with reference to FIGS. 2A to 2D.
両図面研磨済のガラス基体１（コーニング社製＃7059）
に中性洗剤もしくは有機アルカリ系洗剤を用いて通常の
洗浄を施した。次に、電子ビーム蒸着法でCrを0.15μ厚
に堆積せしめ、ポジ型フォトレジスト（シプレー社製AZ
-1370）を用いて所望の形状にフォトレジストパターン
を形成した後、硝酸第２セリウムアンモニウムおよび過
塩素酸の混合水溶液を用いて不要なCrを除去し、コンデ
ンサの下層電極２およびゲート電極３を形成した（第２
図（Ａ））。Both drawings polished glass substrate 1 (Corning # 7059)
Was subjected to normal washing with a neutral detergent or an organic alkaline detergent. Next, Cr was deposited to a thickness of 0.15 μm by the electron beam evaporation method, and a positive photoresist (AZ
-1370) is used to form a photoresist pattern in a desired shape, and unnecessary Cr is removed using a mixed aqueous solution of cerium ammonium nitrate and perchloric acid to remove the lower electrode 2 and the gate electrode 3 of the capacitor. Formed (second
(A).
次いで、容量結合型のグロー放電分解装置内にガラス基
体１をセットし、１×10-6Torrの真空中で230℃に維持
した。次いで装置内にH2で10％に希釈したSiH4を5SCCM
の流量で、またNH3を20SCCMの流量で同時に流入させ、1
3.56MHzの高周波電源を用い、RF放電電力15Wで２時間グ
ロー放電し、窒化シリコンからなる絶縁層４を0.3μ厚
に形成した。次にSiH4ガスを10SCCMの流量で流入させ、
放電電力8W、ガス圧0.07Torrで2.5時間グロー放電し、
非晶質シリコンイントリンシック層５を0.50μ厚に形成
した。続いてH2で10％に希釈したSiH4とH2で100ppmに希
釈したPH3とを混合比1:10で混合したガスを原料として
用い、放電電力30Wでオーミックコンタクト層であるn+
層６を0.12μ堆積せしめた（第２図（Ｂ））。Then, the glass substrate 1 was set in a capacitively coupled glow discharge decomposition apparatus and maintained at 230 ° C. in a vacuum of 1 × 10 -6 Torr. Next, 5 SCCM of SiH 4 diluted to 10% with H 2 was placed in the device.
And NH 3 at a flow rate of 20 SCCM at the same time,
Glow discharge was performed for 2 hours with RF discharge power of 15 W using a high frequency power source of 3.56 MHz to form an insulating layer 4 made of silicon nitride in a thickness of 0.3 μm. Next, SiH 4 gas was introduced at a flow rate of 10 SCCM,
Glow discharge for 2.5 hours at a discharge power of 8 W and a gas pressure of 0.07 Torr,
The amorphous silicon intrinsic layer 5 was formed to a thickness of 0.50 μm. Subsequently, SiH 4 diluted with H 2 to 10% and PH 3 diluted with H 2 to 100 ppm at a mixing ratio of 1:10 were used as a raw material, and an ohmic contact layer n + was formed at a discharge power of 30 W.
Layer 6 was deposited by 0.12 μm (FIG. 2 (B)).
次にポジ型フォトレジスト（東京応化製OFPR-1300）を
用いて所望パターンを形成し、プラズマエッチング法で
RF放電電力100W,ガス圧0.30TorrでCF4ガスによるドライ
エッチングを行ってn+層および非晶質シリコンのイント
リンシック層の不要部を除去し、非晶質シリコン光導電
層７および半導体層８を形成した（第２図（Ｃ））。Next, a positive photoresist (OFPR-1300 made by Tokyo Ohka Co., Ltd.) is used to form the desired pattern, and the plasma etching method is used.
The unnecessary portion of the n + layer and the intrinsic layer of amorphous silicon was removed by dry etching with CF 4 gas with RF discharge power of 100 W and gas pressure of 0.30 Torr, and the amorphous silicon photoconductive layer 7 and the semiconductor layer 8 were removed. Was formed (FIG. 2 (C)).
次に電子ビーム蒸着法でAl9を0.5μ厚に堆積せしめて、
導電層を形成した（第２図（Ｄ））。Next, deposit Al9 to a thickness of 0.5μ by electron beam evaporation,
A conductive layer was formed (FIG. 2 (D)).
続いて所望の形状にフォトレジストパターンを形成した
後、リン酸（85容量％水溶液），硝酸（60容量％水溶
液），氷酢酸および水を16:1:2:1の容量比で混合した液
で露出部分の導電層９を除去し、共通電極10,コンデン
サの上層電極および信号取出し線11を形成した（これに
よって、TFTのソース・ドレイン電極がn+層６上に形成
される。）。しかる後に先に述べたプラズマエッチング
法でCF4ガスによるドライエッチングを行って露出部分
のn+層を除去し、所望パターンのn+層を形成した。次い
でフォトレジストを剥離して第１図（Ｂ）に示したフォ
トセンサアレイを作成した。Then, after forming a photoresist pattern in the desired shape, a mixture of phosphoric acid (85% by volume aqueous solution), nitric acid (60% by volume aqueous solution), glacial acetic acid and water at a volume ratio of 16: 1: 2: 1. The conductive layer 9 in the exposed portion was removed by, and the common electrode 10, the upper layer electrode of the capacitor and the signal take-out line 11 were formed (this forms the source / drain electrodes of the TFT on the n + layer 6). Then, dry etching with CF 4 gas was performed by the above-described plasma etching method to remove the n + layer at the exposed portion to form an n + layer having a desired pattern. Then, the photoresist was peeled off to form the photosensor array shown in FIG.
このフォトセンサは、従来光導電層および半導体層を別
々に成膜した場合に比べて工程数が大幅に削減できる。
また従来各々の非晶質シリコンが所望部分以外に成膜さ
れないように、成膜時にマスキングを用いていたが、こ
の参考例では不要になる。さらに光電変換部とTFT部を
近接して形成できるのでフォトセンサのアレイの集積度
を向上させ、基板面積を大幅に縮小することができる。This photosensor can significantly reduce the number of steps as compared with the case where a photoconductive layer and a semiconductor layer are separately formed.
Conventionally, masking was used at the time of film formation so that each amorphous silicon film was not formed on a portion other than a desired portion, but this is not necessary in this reference example. Further, since the photoelectric conversion part and the TFT part can be formed close to each other, the degree of integration of the photosensor array can be improved and the substrate area can be significantly reduced.
実施例 第３図は本発明の実施例におけるフォトセンサアレイの
部分平面図であり、第４図はそのＡ−Ｂ線に沿った断面
図である。図において12は遮光膜、13は光入射膜であ
り、その他の記号は第１図（Ａ），（Ｂ）と同じであ
る。Embodiment FIG. 3 is a partial plan view of a photosensor array in an embodiment of the present invention, and FIG. 4 is a sectional view taken along line AB thereof. In the figure, 12 is a light-shielding film, 13 is a light-incident film, and other symbols are the same as those in FIGS. 1 (A) and 1 (B).
参考例と同様にガラス基体１上にAlとCrの金属の積層膜
で形成された導電層を蒸着し、フォトリソグラフィ工程
によってコンデンサの下層電極2,ゲート電極３および遮
光膜12を形成する。以後は参考例と全く同様の工程によ
って第３図および第４図に示したフォトセンサアレイを
作成できる。Similar to the reference example, a conductive layer formed of a laminated film of a metal of Al and Cr is vapor-deposited on the glass substrate 1, and the lower electrode 2, the gate electrode 3 and the light shielding film 12 of the capacitor are formed by a photolithography process. After that, the photosensor array shown in FIGS. 3 and 4 can be manufactured by the same steps as in the reference example.
この実施例は屈折率分布型ロッドレンズアレイを用いな
い原稿密着形フォトセンサの例であって、第４図に示す
ように、入射光はガラス基体の下側から入射し、フォト
センサの上部に置かれた図示しない原稿面から反射して
光導電層７に入射する。先に述べた遮光膜12は入射光が
下側から光導電層に入射するのを防ぐためのものであ
る。This embodiment is an example of an original contact type photosensor which does not use a gradient index rod lens array. As shown in FIG. 4, incident light is incident from the lower side of the glass substrate and is incident on the upper part of the photosensor. The light is reflected from the placed original surface (not shown) and enters the photoconductive layer 7. The light shielding film 12 described above is for preventing incident light from entering the photoconductive layer from the lower side.
本実施例に示したフォトセンサの構造は、実施例１で説
明した効果に加え、光導電層に入射し、光導電層を通過
した光が遮光膜のAl上で反射するために、フォトセンサ
の感度が向上する効果がある。In addition to the effect described in the first embodiment, the structure of the photosensor according to the present embodiment has the photosensor in which light incident on the photoconductive layer and passing through the photoconductive layer is reflected on Al of the light shielding film. Has the effect of improving the sensitivity of.
［発明の効果］ 本発明によれば、導電変換部の半導体層とTFT部の半導
体層とが同一で同じ導電型の非晶質シリコン層とされて
いるので、また、導電変換部とTFT部の絶縁層を同じ層
厚としているので、フォトセンサの作製に要する工程が
削減でき、また光電変換部とTFT部とを近接して形成で
きるので、フォトセンサアレイの集積度の向上と小型化
を達成することができる。また、光電変換部に絶縁層を
介して導電層を形成することによって、フォトセンサの
感度を一層向上させることができる。[Effects of the Invention] According to the present invention, the semiconductor layer of the conduction conversion portion and the semiconductor layer of the TFT portion are the same and have the same conductivity type amorphous silicon layer. Since the insulating layer of has the same layer thickness, the steps required for manufacturing the photosensor can be reduced, and since the photoelectric conversion part and the TFT part can be formed close to each other, the degree of integration of the photosensor array can be improved and the size can be reduced. Can be achieved. In addition, the sensitivity of the photosensor can be further improved by forming a conductive layer in the photoelectric conversion portion with an insulating layer interposed therebetween.
第１図（Ａ），（Ｂ）は本発明の理解のための参考例を
示し、同図（Ａ）は部分平面図、同図（Ｂ）は第１図
（Ａ）のＸ−Ｙ線に沿った断面図、 第２図（Ａ）ないし（Ｄ）は第１図の参考例を作成する
工程を示す断面図、 第３図は本発明の実施例を示す部分平面図、 第４図は第３図のＡ−Ｂ線に沿った断面図である。 １……ガラス基体、２……コンデンサの下層電極、３…
…ゲート電極、４……絶縁層、５……非晶質シリコンイ
ントリンシック層、６……n+オーミックコンタクト層、
７……非晶質シリコン光導電層、８……非晶質シリコン
半導体層、９……アルミニウム層、10……共通電極、11
……信号取出し線、12……遮光膜、13……光入射膜。1 (A) and 1 (B) show a reference example for understanding the present invention, FIG. 1 (A) is a partial plan view, and FIG. 1 (B) is a XY line of FIG. 1 (A). 2A to 2D are sectional views showing a step of producing the reference example of FIG. 1, FIG. 3 is a partial plan view showing an embodiment of the present invention, and FIG. FIG. 4 is a sectional view taken along the line AB of FIG. 1 ... Glass substrate, 2 ... Lower layer electrode of capacitor, 3 ...
... gate electrode, 4 ... insulating layer, 5 ... amorphous silicon intrinsic layer, 6 ... n + ohmic contact layer,
7 ... Amorphous silicon photoconductive layer, 8 ... Amorphous silicon semiconductor layer, 9 ... Aluminum layer, 10 ... Common electrode, 11
...... Signal take-out line, 12 …… Light-shielding film, 13 …… Light incident film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 寺田 勝則 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 五福 伊八郎 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 中川 克巳 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (56)参考文献 特開 昭60−227467（ＪＰ，Ａ) 特開 昭57−59377（ＪＰ，Ａ) 特開 昭56−138968（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Katsunori Terada 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Ihachiro Gofuku 3-30-2 Shimomaruko, Ota-ku, Tokyo Non-Incorporated (72) Inventor Katsumi Nakagawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP-A-60-227467 (JP, A) JP-A-57-59377 ( JP, A) JP 56-138968 (JP, A)
Claims (5)
接続された転送用トランジスタ部とを有するフォトセン
サであって、前記光電変換部は受光部を形成するために
前記透明基板上に順次設けられた不透明な導電層、絶縁
層、半導体層、および電極を、前記転送用トランジスタ
部は前記透明基板上に順次設けられたゲート電極、絶縁
層、半導体層、および該半導体層上にオーミックコンタ
クト層を介して設けられた２つの電極を有し、前記光電
変換部と前記転送用トランジスタ部の絶縁層は該光電変
換部と該転送用トランジスタ部で層厚が等しい共通の絶
縁層とされ、前記光電変換部と前記転送用トランジスタ
部の前記半導体層は同一で同じ導電型であることを特徴
とするフォトセンサ。1. A photosensor having a photoelectric conversion part and a transfer transistor part connected to the photoelectric conversion part on a transparent substrate, wherein the photoelectric conversion part is formed on the transparent substrate to form a light receiving part. An opaque conductive layer, an insulating layer, a semiconductor layer, and an electrode sequentially provided on the transparent substrate, the transfer transistor portion is provided on the transparent substrate, the gate electrode, the insulating layer, the semiconductor layer, and the semiconductor layer on the semiconductor layer. It has two electrodes provided via an ohmic contact layer, and the insulating layer of the photoelectric conversion part and the transfer transistor part is a common insulating layer having the same layer thickness in the photoelectric conversion part and the transfer transistor part. And the semiconductor layers of the photoelectric conversion unit and the transfer transistor unit are the same and have the same conductivity type.
許請求の範囲第１項に記載のフォトセンサ。2. The photosensor according to claim 1, wherein the semiconductor layer is an amorphous silicon layer.
第１項に記載のフォトセンサ。3. The photosensor according to claim 1, wherein the conductive layer is a light shielding layer.
遮光するに充分な大きさである特許請求の範囲第３項に
記載のフォトセンサ。4. The photosensor according to claim 3, wherein the light shielding layer is large enough to shield the semiconductor layer of the photoelectric conversion unit from light.
厚みは前記２つの電極の間で薄くされている特許請求の
範囲第１項に記載のフォトセンサ。5. The photosensor according to claim 1, wherein the thickness of the semiconductor layer of the transfer transistor is reduced between the two electrodes.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61011981A JPH0732244B2 (en) | 1986-01-24 | 1986-01-24 | Photo sensor |
| DE3751242T DE3751242T2 (en) | 1986-01-24 | 1987-01-22 | Photoelectric converter. |
| EP87300566A EP0232083B1 (en) | 1986-01-24 | 1987-01-22 | Photoelectric conversion device |
| US07/412,586 US4931661A (en) | 1986-01-24 | 1989-09-25 | Photoelectric conversion device having a common semiconductor layer for a portion of the photoelectric conversion element and a portion of the transfer transistor section |
| US07/907,287 US5306648A (en) | 1986-01-24 | 1992-07-01 | Method of making photoelectric conversion device |
| US07/912,651 US5338690A (en) | 1986-01-24 | 1992-07-09 | Photoelectronic conversion device |
| US08/128,108 US5627088A (en) | 1986-01-24 | 1993-09-29 | Method of making a device having a TFT and a capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61011981A JPH0732244B2 (en) | 1986-01-24 | 1986-01-24 | Photo sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62171154A JPS62171154A (en) | 1987-07-28 |
| JPH0732244B2 true JPH0732244B2 (en) | 1995-04-10 |
Family
ID=11792776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61011981A Expired - Lifetime JPH0732244B2 (en) | 1986-01-24 | 1986-01-24 | Photo sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732244B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480072A (en) * | 1987-09-21 | 1989-03-24 | Ricoh Kk | Manufacture of image senser integrating tft |
| JP2831997B2 (en) * | 1987-10-31 | 1998-12-02 | キヤノン株式会社 | Method for manufacturing semiconductor device |
| KR100537376B1 (en) * | 1998-12-16 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | thin film transistor optical sensor and fabricating method the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138968A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Photoelectric converter |
| JPS5759377A (en) * | 1980-09-27 | 1982-04-09 | Sony Corp | Line sensor |
| JPS60227467A (en) * | 1984-04-26 | 1985-11-12 | Nec Corp | Image sensor |
-
1986
- 1986-01-24 JP JP61011981A patent/JPH0732244B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62171154A (en) | 1987-07-28 |
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