JPH07321253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH07321253A
JPH07321253A JP10648994A JP10648994A JPH07321253A JP H07321253 A JPH07321253 A JP H07321253A JP 10648994 A JP10648994 A JP 10648994A JP 10648994 A JP10648994 A JP 10648994A JP H07321253 A JPH07321253 A JP H07321253A
Authority
JP
Japan
Prior art keywords
semiconductor chip
circuit board
solder bumps
sealing material
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10648994A
Other languages
Japanese (ja)
Other versions
JP3348973B2 (en
Inventor
Minoru Mukai
稔 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10648994A priority Critical patent/JP3348973B2/en
Publication of JPH07321253A publication Critical patent/JPH07321253A/en
Application granted granted Critical
Publication of JP3348973B2 publication Critical patent/JP3348973B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PURPOSE:To improve the reliabilities of the mechanical and electrical connections of bumps, by reducing further the thermal stresses of the bumps. CONSTITUTION:On a circuit board 13 whereon a semiconductor chip 12 is mounted by solder bumps 15, an interposing structure 17 made of the material having a nearly equal linear expansion coefficient to the solder bumps 15 whose height is nearly equal to the solder bumps 15 is so provided as to surround the mounting part of the semiconductor chip 12. Concurrently with this, sealing is so performed with a sealing material 18 that the semiconductor chip 12 and the interposing structure 17 are covered therewith. Thereby, the semiconductor chip 12 is fixed on the circuit board 13 by the sealing material 18. In this case, the sealing material 18 does not be in the state wherein it is contacted directly with the solder bumps 15, and the chip 12 is fixed on the circuit board 13 via the interposing structure 17 having the nearly equal linear expansion coefficient to the solder bumps 15. As a result, the thermal stresses which are generated in the solder bumps 15 by repeated variations of temperature and by the difference between the linear expansion coefficients of the solder bump 15 and the sealing material 18 are reduced remarkably.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device.

【0002】[0002]

【従来の技術】周知の通り、半導体装置が実装されてい
る機器の高度化、多機能化などに伴い半導体チップの高
集積化、大規模化が進み、この半導体チップと回路基板
を接続する電気的接続部の数が非常に多数のものになっ
てきている。そして、特に近年において半導体チップを
回路基板に半田バンプを用いて直接実装するフリップチ
ップ(flip−chip)実装が一般化しつつある。
フリップチップ実装は、実装面積が半導体チップ寸法と
ほとんど同じものとすることができるため小形化に適し
ている。
2. Description of the Related Art As is well known, with the sophistication and multi-functionalization of equipment in which semiconductor devices are mounted, semiconductor chips are becoming highly integrated and large-scaled. The number of dynamic connections is becoming very large. In recent years, in particular, flip-chip mounting, in which a semiconductor chip is directly mounted on a circuit board using solder bumps, is becoming popular.
Flip-chip mounting is suitable for miniaturization because the mounting area can be almost the same as the semiconductor chip size.

【0003】以下、フリップチップ実装によって形成さ
れた従来の樹脂封止型半導体装置について図3を参照し
て説明する。図3は縦断面図であり、図3において、樹
脂封止型半導体装置1は、半導体チップ2が回路基板3
の上に実装されて構成される。
A conventional resin-sealed semiconductor device formed by flip-chip mounting will be described below with reference to FIG. FIG. 3 is a vertical cross-sectional view. In FIG. 3, in the resin-sealed semiconductor device 1, the semiconductor chip 2 has a circuit board 3
It is implemented and configured on top of.

【0004】この実装される半導体チップ2は、その電
極パッドに半田バンプ4が設けられていて、この半田バ
ンプ4を回路基板3の対応する電極パッド5に押し付け
るようにして接続される。そして半導体チップ2が接続
された後、エポキシ樹脂などの封止材6で半導体チップ
2全体を覆うようにして樹脂封止が行われる。
Solder bumps 4 are provided on the electrode pads of the semiconductor chip 2 to be mounted, and the solder bumps 4 are pressed against the corresponding electrode pads 5 of the circuit board 3 to be connected. After the semiconductor chip 2 is connected, resin sealing is performed so as to cover the entire semiconductor chip 2 with a sealing material 6 such as epoxy resin.

【0005】このように構成された樹脂封止型半導体装
置1では、半導体チップ2と回路基板3の機械的な接続
が、樹脂封止を行わない場合と比較して、より剛に行わ
れている。
In the resin-encapsulated semiconductor device 1 thus configured, the mechanical connection between the semiconductor chip 2 and the circuit board 3 is made more rigid than in the case where the resin encapsulation is not performed. There is.

【0006】すなわち、フリップチップ実装では、半導
体チップの動作の有無、あるいは環境温度の変動に起因
して半導体装置に温度変動が繰り返し生じ、半導体チッ
プと回路基板の間には両者の線膨張率に起因した相対変
形が生じる。そして、樹脂封止が行われていない場合に
は、半導体チップと回路基板の接続部である半田バンプ
に熱応力が繰り返し生じ、熱疲労破壊する可能性も高く
なり、機械的、電気的な接続の信頼性は著しく低下す
る。こうした接続部信頼性低下に対して実装後に半導体
チップを樹脂などの封止材で封止することで、半導体チ
ップと回路基板の接続を機械的に剛とし、接続の信頼性
を高めるようにしている。
That is, in flip-chip mounting, temperature fluctuations repeatedly occur in the semiconductor device due to the presence or absence of operation of the semiconductor chip or fluctuations in the environmental temperature, and the linear expansion coefficient between the semiconductor chip and the circuit board increases. Due to this, relative deformation occurs. If resin sealing is not performed, thermal stress is repeatedly generated in the solder bumps, which are the connecting portions between the semiconductor chip and the circuit board, and the possibility of thermal fatigue damage increases, resulting in a mechanical and electrical connection. Reliability is significantly reduced. In order to improve the reliability of the connection by sealing the semiconductor chip with a sealing material such as resin after mounting to reduce the reliability of the connection part, the connection between the semiconductor chip and the circuit board is mechanically rigid. There is.

【0007】したがって、半導体装置1の温度が、半導
体チップ2の動作に伴って変動したり、あるいは使用し
ている環境の温度が変化することなどで変動した際、こ
れらの温度変動に起因して半導体チップ2と回路基板3
との間に相対変形が生じようとするが、両者は剛に接続
されているためその間の変形量が低減され、半田バンプ
4に加わる熱応力が低減される。
Therefore, when the temperature of the semiconductor device 1 fluctuates along with the operation of the semiconductor chip 2 or when the temperature of the environment in which it is used fluctuates, these temperature fluctuations cause Semiconductor chip 2 and circuit board 3
Although relative deformation tends to occur between the two, since the two are rigidly connected, the amount of deformation therebetween is reduced, and the thermal stress applied to the solder bump 4 is reduced.

【0008】しかしながら、半田バンプ4は封止材6と
接触し、周囲が囲まれた構造となっているため、繰り返
しの温度変動と、半田バンプ4の材料と封止材6の線膨
張率差に起因して、半田バンプ4には引張・圧縮の熱応
力が発生して半田バンプ4が最終的に破断に至る等、熱
疲労の信頼性の面から望ましいものではなかった。
However, since the solder bumps 4 are in contact with the encapsulating material 6 and have a structure surrounded by the periphery, repeated temperature fluctuations and a difference in linear expansion coefficient between the material of the solder bumps 4 and the encapsulating material 6 are caused. Due to the above, the solder bumps 4 are not desirable in terms of reliability of thermal fatigue, such that tensile / compression thermal stress is generated and the solder bumps 4 eventually break.

【0009】また上述の状況は、半導体チップ2を直接
回路基板3に実装するフリップチップ実装等の場合のみ
ならず、図示しないがプリント基板に半導体チップを搭
載して形成されたICパッケージを、プリント基板に設
けた半田バンプを回路基板の電極パッドに接続して直接
実装し、それを覆うように樹脂などの封止材で封止する
場合についても、全く同様である。
The above-mentioned situation is not limited to the case of flip-chip mounting in which the semiconductor chip 2 is directly mounted on the circuit board 3, but an IC package formed by mounting the semiconductor chip on a printed board (not shown) is printed. The same applies to the case where the solder bumps provided on the board are connected to the electrode pads of the circuit board, directly mounted, and sealed with a sealing material such as a resin so as to cover it.

【0010】[0010]

【発明が解決しようとする課題】上記のように従来は樹
脂封止したものにおいても、半導体チップ等と回路基板
を接続する半田バンプの機械的、電気的な接続の信頼性
は十分に高いものではなかった。このような状況に鑑み
て本発明はなされたもので、その目的とするところは、
温度変動と線膨張率の差に起因して発生するバンプの熱
応力をより低減させ、機械的、電気的な接続の信頼性を
向上させた半導体装置を提供することにある。
As described above, even in the conventional resin-sealed product, the reliability of mechanical and electrical connection of the solder bumps for connecting the semiconductor chip and the circuit board is sufficiently high. Was not. The present invention has been made in view of such a situation, and the purpose thereof is to:
It is an object of the present invention to provide a semiconductor device in which the thermal stress of bumps caused by the difference between temperature fluctuations and the coefficient of linear expansion is further reduced, and the reliability of mechanical and electrical connections is improved.

【0011】[0011]

【課題を解決するための手段】本発明の半導体装置は、
半導体チップを回路基板にバンプを用いて実装し且つ封
止材により封止した半導体装置において、回路基板に
は、半導体チップの実装部位を取り囲むようにバンプと
略同一の線膨脹率を有する材料で形成され該バンプの高
さと略同じ高さとなるように形成された介在構造部材が
設けられていると共に、半導体チップと介在構造部材を
覆うように封止材による封止が行われていることを特徴
とするものであり、また、半導体チップが組み込まれた
ICパッケージを回路基板にバンプを用いて実装し且つ
封止材により封止した半導体装置において、回路基板に
は、ICパッケージの実装部位を取り囲むようにバンプ
と略同一の線膨脹率を有する材料で形成され該バンプの
高さと略同じ高さとなるように形成された介在構造部材
が設けられていると共に、ICパッケージと介在構造部
材を覆うように封止材による封止が行われていることを
特徴とするものであり、さらに、介在構造部材が、バン
プと同一の材料で構成されていることを特徴とするもの
である。
The semiconductor device of the present invention comprises:
In a semiconductor device in which a semiconductor chip is mounted on a circuit board using bumps and sealed with a sealing material, the circuit board is made of a material having a linear expansion coefficient substantially the same as that of the bumps so as to surround a mounting portion of the semiconductor chip. The interposing structure member is formed so as to have a height substantially the same as the height of the bump, and the encapsulating material is used to cover the semiconductor chip and the interposing structure member. In a semiconductor device in which an IC package incorporating a semiconductor chip is mounted on a circuit board using bumps and sealed with a sealing material, the circuit board has a mounting portion of the IC package. An interposing structure member formed of a material having a coefficient of linear expansion substantially the same as that of the bump is provided so as to surround the bump and the height of the bump is substantially the same as that of the bump. In addition, the IC package and the intervening structural member are sealed with a sealing material so as to cover the interposing structural member, and the interposing structural member is made of the same material as the bump. It is characterized by.

【0012】[0012]

【作用】上記のように構成された半導体装置は、半導体
チップあるいは半導体チップを組み込んだICパッケー
ジがバンプによって実装される回路基板上に、実装部位
を取り囲むようにバンプと略同一の線膨脹率の材料でバ
ンプと略同じ高さの介在構造物が設けられると共に、半
導体チップあるいはICパッケージと介在構造物とを覆
うように封止材による封止が行われている。これによ
り、半導体チップあるいは半導体チップを組み込んだI
Cパッケージは、封止材によって回路基板に対して固定
され、半導体チップあるいはICパッケージと回路基板
のバンプによる接続はより剛な機械的なものとなり、半
導体チップの動作に伴って温度変動が生じても回路基板
との間の相対変形量を低減され、バンプに加わる熱応力
が低減される。また、封止材はバンプに直接接触した状
態でなく、さらに封止材はバンプと略同じ線膨張率の介
在構造物を介して回路基板に上に固着されているので、
繰り返し温度変動と、バンプと封止材の線膨張率差によ
ってバンプに生じる熱応力は著しく低減されたものとな
る。
In the semiconductor device constructed as described above, a semiconductor chip or an IC package incorporating the semiconductor chip is mounted on the circuit board by bumps so as to have a linear expansion coefficient substantially the same as that of the bumps so as to surround the mounting portion. An intervening structure having substantially the same height as the bump is provided by a material, and a sealing material is used to seal the semiconductor chip or the IC package and the intervening structure. As a result, a semiconductor chip or an I
The C package is fixed to the circuit board by the encapsulating material, and the connection between the semiconductor chip or the IC package and the bump by the bump becomes more rigid and mechanical, and the temperature fluctuation occurs due to the operation of the semiconductor chip. Also, the amount of relative deformation with the circuit board is reduced, and the thermal stress applied to the bumps is reduced. Further, since the encapsulating material is not in direct contact with the bumps, and the encapsulating material is fixed on the circuit board through an intervening structure having substantially the same linear expansion coefficient as the bumps,
The thermal stress generated in the bump due to the repeated temperature fluctuation and the difference in linear expansion coefficient between the bump and the sealing material is remarkably reduced.

【0013】[0013]

【実施例】以下、本発明の実施例を図面を参照して説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0014】先ず、第1の実施例のフリップチップ実装
によって形成された樹脂封止型半導体装置を図1により
説明する。図1は縦断面図であり、図1において、樹脂
封止型半導体装置11は、半導体チップ12を回路基板
13の上に実装して構成されている。
First, a resin-sealed semiconductor device formed by flip-chip mounting according to the first embodiment will be described with reference to FIG. FIG. 1 is a vertical cross-sectional view, and in FIG. 1, a resin-sealed semiconductor device 11 is configured by mounting a semiconductor chip 12 on a circuit board 13.

【0015】半導体チップ12は、例えば1辺が2mm
〜5mm程度の所定寸法をもって形成された方形状のも
ので、その回路基板13への実装面に設けられた多数の
電極パッド14には、それぞれに直径が約50μm程度
で高さが100μm以下の所定寸法に略々揃えられた半
田バンプ15が、互いに所定の空間距離を設けるように
して立設されている。
The semiconductor chip 12 has a side of 2 mm, for example.
Each of the plurality of electrode pads 14 provided on the mounting surface of the circuit board 13 has a diameter of about 50 μm and a height of 100 μm or less. The solder bumps 15 that are substantially aligned to have a predetermined size are erected so as to have a predetermined space distance from each other.

【0016】また、回路基板13は、その半導体チップ
12の実装部位表面に半導体チップ12の半田バンプ1
5に対応して電極パッド16が設けられており、さらに
半導体チップ12の実装部位には、この実装部位を全周
に亘り取り囲むように介在構造部材17が設けられてい
る。なお、介在構造部材17で取り囲まれた内側の実装
部位に半導体チップ12を実装した際には、介在構造部
材17と半導体チップ12の外周との間に微小間隙aが
できるようになっている。
The circuit board 13 has solder bumps 1 of the semiconductor chip 12 on the surface of the mounting portion of the semiconductor chip 12.
5 is provided with an electrode pad 16, and an interposing structure member 17 is provided on a mounting portion of the semiconductor chip 12 so as to surround the mounting portion over the entire circumference. When the semiconductor chip 12 is mounted on the inner mounting portion surrounded by the intervening structure member 17, a minute gap a is formed between the intervening structure member 17 and the outer periphery of the semiconductor chip 12.

【0017】また、介在構造部材17は、断面形状が方
形の堤状であって、高さが半田バンプ15の高さと略等
しく、幅が半田バンプ15の直径より十分大きな寸法と
なっており、さらに半田バンプ15と同じ材料で形成さ
れ、同じ線膨張率を有するものとなっている。
The intervening structural member 17 has a square bank shape in cross section, a height substantially equal to the height of the solder bump 15, and a width sufficiently larger than the diameter of the solder bump 15. Further, it is made of the same material as the solder bump 15 and has the same linear expansion coefficient.

【0018】そして、回路基板13の上面に実装された
半導体チップ12に対し、半導体チップ12と介在構造
部材17を覆うようにエポキシ樹脂やガラスフィラー入
りのエポキシ樹脂などの封止材18による成形が行わ
れ、樹脂封止が行われている。
Then, the semiconductor chip 12 mounted on the upper surface of the circuit board 13 is molded with a sealing material 18 such as an epoxy resin or an epoxy resin containing glass filler so as to cover the semiconductor chip 12 and the intervening structural member 17. Then, resin sealing is performed.

【0019】このような回路基板13に半導体チップ1
2を実装するに当たっては、先ず半導体チップ12を回
路基板13の実装部位に載置する。その際、半田バンプ
15が対応する電極パッド16上に来るようにする。そ
の後、加熱し、半田バンプ15を電極パッド16に押し
付けることによって半田バンプ15を電極パッド16に
溶着し、接続が行われる。
The semiconductor chip 1 is mounted on such a circuit board 13.
In mounting 2, the semiconductor chip 12 is first placed on the mounting portion of the circuit board 13. At that time, the solder bumps 15 are placed on the corresponding electrode pads 16. After that, the solder bumps 15 are heated and pressed against the electrode pads 16, so that the solder bumps 15 are welded to the electrode pads 16 and connection is performed.

【0020】そして、電極パッド14と電極パッド16
とが半田バンプ15を介して接続された後、封止材18
で半導体チップ12と介在構造部材17の全体を覆うよ
うに成形が行われ、樹脂封止が完了する。
Then, the electrode pad 14 and the electrode pad 16
After the and are connected via the solder bumps 15, the sealing material 18
Then, molding is performed so as to cover the entire semiconductor chip 12 and the interposition structure member 17, and the resin sealing is completed.

【0021】このとき、介在構造部材17で取り囲まれ
ている回路基板13の半導体チップ12の実装部位表面
と、半導体チップ12の下面との間の空隙19には、介
在構造部材17と半導体チップ12の外周との間が微小
間隙aしか開いていないので封止材18は流入せず、ま
た封止材18の流入が有ったとしても流入量は抑制され
たものとなる。このため、半田バンプ15は、その周囲
が封止材18によって埋められてしまうことがなく、中
空状態のままとなっている。
At this time, the intervening structure member 17 and the semiconductor chip 12 are provided in the space 19 between the mounting surface of the semiconductor chip 12 of the circuit board 13 surrounded by the interposing structure member 17 and the lower surface of the semiconductor chip 12. The sealing material 18 does not flow in because there is only a minute gap a between the sealing material 18 and the outer periphery of the sealing material 18. Even if there is an inflow of the sealing material 18, the inflow amount is suppressed. Therefore, the solder bump 15 does not have its periphery filled with the sealing material 18, and remains in a hollow state.

【0022】このように構成されたものでは、樹脂封止
を行っていないものに比較して半導体チップ12と回路
基板13とが封止材18と介在構造部材17を介して固
着され、機械的な接続が剛となっている。それ故、半導
体装置11の温度が、半導体チップ12の動作に伴って
変動したり、あるいは使用している環境の温度が変化す
ることなどで変動した際に、温度変動によって半導体チ
ップ12と回路基板13との間に相対変形が生じても、
両者の反り効果によって相対変形量が低減され、半田バ
ンプ15に加わる熱応力も低減されたものとなってい
る。
In the case of such a structure, the semiconductor chip 12 and the circuit board 13 are fixed to each other through the sealing material 18 and the interposition structural member 17 as compared with the case where the resin sealing is not performed, and the mechanical structure is improved. The connection is rigid. Therefore, when the temperature of the semiconductor device 11 fluctuates due to the operation of the semiconductor chip 12 or when the temperature of the environment in which it is used fluctuates, the temperature fluctuation causes the semiconductor chip 12 and the circuit board to change. Even if relative deformation occurs with 13,
The amount of relative deformation is reduced by the warp effect of both, and the thermal stress applied to the solder bumps 15 is also reduced.

【0023】さらに、半導体チップ12の下面側の空隙
19は中空状態のままで、半田バンプ15が封止材18
と接触した状態になっておらず、また封止材18は半田
バンプ15と同じ材料の介在構造部材17に固着してい
るものであるので、繰り返しの温度変動と半田バンプ1
5の材料と封止材18の線膨張率の差とによって直接半
田バンプ15に生じる熱応力は著しく低減される。
Furthermore, the voids 19 on the lower surface side of the semiconductor chip 12 remain hollow, and the solder bumps 15 are sealed by the sealing material 18.
Since the sealing material 18 is not in contact with the solder bumps 15 and is fixed to the intervening structural member 17 made of the same material as the solder bumps 15, repeated temperature fluctuations and the solder bumps 1
The thermal stress generated directly on the solder bumps 15 due to the difference in the linear expansion coefficient between the material of No. 5 and the sealing material 18 is significantly reduced.

【0024】またさらに、封止材18は線膨張率の異な
る介在構造部材17に固着しているが、介在構造部材1
7が半田バンプ15に比べて十分大きい幅寸法を有して
いるので、繰り返しの温度変動が加わっても破断に至る
等の虞は少なくなっている。
Further, the sealing material 18 is fixed to the intervening structural member 17 having a different linear expansion coefficient.
Since 7 has a width dimension sufficiently larger than that of the solder bumps 15, even if repeated temperature fluctuations are applied, the risk of breakage is reduced.

【0025】次に、第2の実施例の樹脂封止型半導体装
置を図2により説明する。図2は縦断面図であり、図2
において、樹脂封止型半導体装置21は、半導体チップ
22が組み込まれたICパッケージ23を回路基板24
の上に実装して構成されている。
Next, the resin-sealed semiconductor device of the second embodiment will be described with reference to FIG. 2 is a vertical sectional view.
In the resin-encapsulated semiconductor device 21, the IC package 23 in which the semiconductor chip 22 is incorporated is attached to the circuit board 24.
It is implemented and configured on.

【0026】ICパッケージ23は、例えば1辺が2c
m〜5cm程度の所定寸法をもって形成された方形状の
プリント基板25の上表面に、例えば1辺が2mm〜5
mm程度の所定寸法をもって形成された方形状の半導体
チップ22を搭載し、それぞれの対応する図示しない電
極パッドをボンディングワイヤ26で接続するようにし
ている。さらにICパッケージ23は、プリント基板2
5上に搭載された半導体チップ22を覆うようにエポキ
シ樹脂などの封止材27による成形が行われている。
The IC package 23 has, for example, 2c on one side.
On the upper surface of a rectangular printed board 25 formed with a predetermined dimension of about m to 5 cm, for example, one side is 2 mm to 5 mm.
A rectangular semiconductor chip 22 formed with a predetermined dimension of about mm is mounted, and the corresponding electrode pads (not shown) are connected by bonding wires 26. Further, the IC package 23 is the printed circuit board 2
Molding is performed by a sealing material 27 such as an epoxy resin so as to cover the semiconductor chip 22 mounted on the substrate 5.

【0027】そして、プリント基板25の半導体チップ
22の搭載面の裏面である下面には、多数の電極パッド
28が設けられており、それらの電極パッド28には、
直径が約100μm〜200μm程度で高さが500μ
m以下の所定寸法に略々揃えられた半田バンプ29が、
互いに所定の空間距離を設けるようにして立設されてい
る。
A large number of electrode pads 28 are provided on the lower surface, which is the rear surface of the mounting surface of the semiconductor chip 22 of the printed board 25, and these electrode pads 28 are provided with
Diameter is about 100μm-200μm and height is 500μ
Solder bumps 29, which are substantially aligned to a predetermined dimension of m or less,
They are erected so that a predetermined space distance is provided therebetween.

【0028】また、回路基板24は、そのICパッケー
ジ23の実装部位表面にICパッケージ23の半田バン
プ29に対応して電極パッド30が設けられており、さ
らにICパッケージ23の実装部位には、この実装部位
を全周に亘り取り囲むように介在構造部材31が設けら
れている。なお、介在構造部材31で取り囲まれた内側
の実装部位にICパッケージ23を実装した際には、介
在構造部材31とICパッケージ23の外周との間に微
小間隙bができるようになっている。
The circuit board 24 is provided with electrode pads 30 on the surface of the mounting portion of the IC package 23 corresponding to the solder bumps 29 of the IC package 23. An intervening structural member 31 is provided so as to surround the mounting site over the entire circumference. When the IC package 23 is mounted on the inner mounting portion surrounded by the intervening structure member 31, a minute gap b is formed between the interposing structure member 31 and the outer periphery of the IC package 23.

【0029】また、介在構造部材31は、断面形状が方
形の堤状であって、高さが半田バンプ29の高さと略等
しく、幅が半田バンプ29の直径より十分大きな寸法と
なっており、さらに半田バンプ29と同じ材料で形成さ
れ、同じ線膨張率を有するものとなっている。
The interstitial structural member 31 has a square bank shape in cross section, a height substantially equal to the height of the solder bump 29, and a width sufficiently larger than the diameter of the solder bump 29. Further, it is made of the same material as the solder bumps 29 and has the same coefficient of linear expansion.

【0030】そして、回路基板24の上面に実装された
ICパッケージ23に対し、ICパッケージ23と介在
構造部材31を覆うようにエポキシ樹脂やガラスフィラ
ー入りのエポキシ樹脂などの封止材32による成形が行
われ、樹脂封止が完了する。
Then, the IC package 23 mounted on the upper surface of the circuit board 24 is molded with a sealing material 32 such as epoxy resin or epoxy resin containing glass filler so as to cover the IC package 23 and the interposition structural member 31. Then, the resin sealing is completed.

【0031】このような回路基板24に半導体チップ2
2が組み込まれたICパッケージ23を実装するに当た
っては、先ず半導体チップ22をプリント基板25の上
表面に搭載し、さらに半導体チップ22を覆うように封
止材27による成形を行ってICパッケージ23を形成
する。続いて、このように形成されたICパッケージ2
3を回路基板24の実装部位に載置する。その際、半田
バンプ29が対応する電極パッド30上に来るようにす
る。その後、加熱し、半田バンプ29を電極パッド30
に押し付けることによって半田バンプ29を電極パッド
30に溶着し、接続が行われる。
The semiconductor chip 2 is mounted on the circuit board 24.
In mounting the IC package 23 in which 2 is incorporated, first, the semiconductor chip 22 is mounted on the upper surface of the printed board 25, and then the IC chip 23 is molded by the sealing material 27 so as to cover the semiconductor chip 22. Form. Then, the IC package 2 thus formed
3 is placed on the mounting portion of the circuit board 24. At that time, the solder bumps 29 are placed on the corresponding electrode pads 30. After that, the solder bumps 29 are heated and the solder bumps 29 are connected to the electrode pads 30.
The solder bumps 29 are welded to the electrode pads 30 by being pressed against, and connection is made.

【0032】そして、電極パッド28と電極パッド30
とが半田バンプ29を介して接続された後、封止材32
でICパッケージ23と介在構造部材17の全体を覆う
ように成形が行われ、樹脂封止が完了する。
Then, the electrode pad 28 and the electrode pad 30
After being connected to each other via the solder bumps 29, the sealing material 32
Then, molding is performed so as to cover the entire IC package 23 and the interposition structure member 17, and the resin sealing is completed.

【0033】このとき、第1の実施例と同様に、介在構
造部材31で取り囲まれている回路基板24のICパッ
ケージ23の実装部位表面と、ICパッケージ23の下
面との間の空隙33には、介在構造部材31とICパッ
ケージ23の外周との間が微小間隙bしか開いていない
ので封止材32は流入せず、また封止材32の流入が有
ったとしても流入量は抑制されたものとなる。このた
め、半田バンプ29は、その周囲が封止材32によって
埋められてしまうことがなく、中空状態のままとなって
いる。
At this time, as in the first embodiment, in the space 33 between the mounting surface of the IC package 23 of the circuit board 24 surrounded by the interposition structural member 31 and the lower surface of the IC package 23. Since there is only a minute gap b between the intervening structure member 31 and the outer periphery of the IC package 23, the sealing material 32 does not flow in, and even if there is an inflow of the sealing material 32, the inflow amount is suppressed. It becomes a thing. For this reason, the solder bumps 29 remain hollow without being filled with the sealing material 32 around them.

【0034】このため、このように構成された本実施例
においても、第1の実施例と同様に、樹脂封止を行って
いないものに比較してICパッケージ23と回路基板2
4とが封止材32と介在構造部材31を介して固着さ
れ、機械的な接続が剛となっている。それ故、半導体装
置21の温度が、半導体チップ22の動作に伴って変動
したり、あるいは使用している環境の温度が変化するこ
となどで変動した際に、半導体チップ22を組み込んで
いるICパッケージ23と回路基板13との間に温度変
動によって相対変形が生じても、両者の反り効果によっ
て相対変形量が低減され、半田バンプ29に加わる熱応
力も低減されたものとなっている。
Therefore, also in the present embodiment having such a configuration, as in the case of the first embodiment, the IC package 23 and the circuit board 2 are compared with those which are not resin-sealed.
4 are fixed to each other via the sealing material 32 and the interposition structural member 31, and the mechanical connection is rigid. Therefore, when the temperature of the semiconductor device 21 fluctuates due to the operation of the semiconductor chip 22 or when the temperature of the environment in use changes, an IC package incorporating the semiconductor chip 22. Even if relative deformation occurs between the circuit board 23 and the circuit board 13 due to temperature fluctuations, the amount of relative deformation is reduced by the warp effect of both, and the thermal stress applied to the solder bumps 29 is also reduced.

【0035】さらに、ICパッケージ23の下面側の空
隙33は中空状態のままで、半田バンプ29が封止材3
2と接触した状態となっておらず、また封止材32は半
田バンプ29と同じ材料の介在構造部材31に固着して
いるものであるので、繰り返しの温度変動と半田バンプ
29の材料と封止材32の線膨張率の差とによって直接
半田バンプ29に生じる熱応力は著しく低減される。
Further, the voids 33 on the lower surface side of the IC package 23 remain hollow, and the solder bumps 29 are sealed by the sealing material 3.
2 is not in contact with the solder bumps 29, and the sealing material 32 is fixed to the intervening structural member 31 made of the same material as the solder bumps 29. The thermal stress generated directly on the solder bumps 29 due to the difference in the linear expansion coefficient of the stopper 32 is significantly reduced.

【0036】またさらに、封止材32は線膨張率の異な
る介在構造部材31に固着しているが、介在構造部材3
1が半田バンプ29に比べて十分大きい幅寸法を有して
いるので、繰り返しの温度変動が加わっても破断に至る
等の虞は少なくなっている。
Furthermore, although the sealing material 32 is fixed to the intervening structural member 31 having a different linear expansion coefficient, the interposing structural member 3
Since 1 has a width dimension sufficiently larger than that of the solder bumps 29, there is less risk of breaking even if repeated temperature fluctuations are applied.

【0037】なお、上記の各実施例では介在構造部材1
7,31を半田バンプ15,29と同じ材料で形成して
いるが、これに限るものではなく、半田バンプ15,2
9と略同一の線膨脹率を有する材料、例えばエポキシ樹
脂に半田と略同一の線膨脹率が得られるようガラスフィ
ラーを混入させた樹脂材料等で形成してもよい。また半
田バンプ15,29に替えて、例えば半田以外の他のろ
う材や導電性樹脂材料によって形成されたバンプを用い
て構成し、同時にこのバンプと略同一の線膨脹率を有す
る材料を用いて介在構造部材を構成するようにしてもよ
い。
In each of the above embodiments, the interposition structural member 1 is used.
7 and 31 are formed of the same material as the solder bumps 15 and 29, the present invention is not limited to this.
9 may be formed of a material having substantially the same linear expansion coefficient as that of No. 9, for example, a resin material in which epoxy resin is mixed with glass filler so as to obtain substantially the same linear expansion coefficient as that of solder. Further, instead of the solder bumps 15 and 29, for example, a bump formed of a brazing material other than solder or a conductive resin material is used, and at the same time, a material having substantially the same linear expansion coefficient as the bump is used. You may make it comprise an interposition structure member.

【0038】[0038]

【発明の効果】以上の説明から明らかなように本発明
は、半導体チップあるいは半導体チップを組み込んだI
Cパッケージがバンプによって実装される回路基板上
に、実装部位を取り囲むようにバンプと略同一の線膨脹
率の材料でバンプと略同じ高さの介在構造物が設けられ
ると共に、半導体チップあるいはICパッケージと介在
構造物とを覆うように封止材による封止が行われるよう
構成したことにより、バンプの熱応力がより低減され、
機械的、電気的な接続の信頼性が向上する等の効果が得
られる。
As is apparent from the above description, the present invention is a semiconductor chip or an I incorporating a semiconductor chip.
On a circuit board on which the C package is mounted by bumps, an interposing structure that is made of a material having substantially the same linear expansion coefficient as the bumps and has substantially the same height as the bumps is provided so as to surround the mounting portion, and a semiconductor chip or an IC package is also provided. The thermal stress of the bumps is further reduced by the configuration in which the sealing material is used to cover the interposing structure and the intervening structure.
Effects such as improvement in reliability of mechanical and electrical connection can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す縦断面図である。FIG. 1 is a vertical cross-sectional view showing a first embodiment of the present invention.

【図2】本発明の第2の実施例を示す縦断面図である。FIG. 2 is a vertical cross-sectional view showing a second embodiment of the present invention.

【図3】従来例を示す縦断面図である。FIG. 3 is a vertical sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

12…半導体チップ 13…回路基板 15…半田バンプ 17…介在構造部材 18…封止材 12 ... Semiconductor chip 13 ... Circuit board 15 ... Solder bump 17 ... Interposed structural member 18 ... Encapsulating material

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを回路基板にバンプを用い
て実装し且つ封止材により封止した半導体装置におい
て、前記回路基板には、前記半導体チップの実装部位を
取り囲むように前記バンプと略同一の線膨脹率を有する
材料で形成され該バンプの高さと略同じ高さとなるよう
に形成された介在構造部材が設けられていると共に、前
記半導体チップと前記介在構造部材を覆うように前記封
止材による封止が行われていることを特徴とする半導体
装置。
1. A semiconductor device in which a semiconductor chip is mounted on a circuit board using bumps and sealed with a sealing material, and the circuit board is substantially the same as the bumps so as to surround a mounting portion of the semiconductor chip. An intervening structural member formed of a material having a linear expansion coefficient of about 10 mm and having a height substantially the same as the height of the bump is provided, and the sealing is performed so as to cover the semiconductor chip and the interposing structural member. A semiconductor device, which is sealed with a material.
【請求項2】 半導体チップが組み込まれたICパッケ
ージを回路基板にバンプを用いて実装し且つ封止材によ
り封止した半導体装置において、前記回路基板には、前
記ICパッケージの実装部位を取り囲むように前記バン
プと略同一の線膨脹率を有する材料で形成され該バンプ
の高さと略同じ高さとなるように形成された介在構造部
材が設けられていると共に、前記ICパッケージと前記
介在構造部材を覆うように前記封止材による封止が行わ
れていることを特徴とする半導体装置。
2. A semiconductor device in which an IC package incorporating a semiconductor chip is mounted on a circuit board by using bumps and sealed with a sealing material, wherein the circuit board surrounds a mounting portion of the IC package. Is provided with an intervening structural member formed of a material having substantially the same coefficient of linear expansion as the bump and having a height substantially the same as the height of the bump, and the IC package and the interposing structural member are provided. A semiconductor device, wherein the sealing material is sealed so as to cover the semiconductor device.
【請求項3】 前記介在構造部材が、前記バンプと同一
の材料で構成されていることを特徴とする請求項1及び
請求項2のいずれかに記載の半導体装置。
3. The semiconductor device according to claim 1, wherein the intervening structure member is made of the same material as the bump.
JP10648994A 1994-05-20 1994-05-20 Semiconductor device Expired - Fee Related JP3348973B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10648994A JP3348973B2 (en) 1994-05-20 1994-05-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10648994A JP3348973B2 (en) 1994-05-20 1994-05-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH07321253A true JPH07321253A (en) 1995-12-08
JP3348973B2 JP3348973B2 (en) 2002-11-20

Family

ID=14434879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10648994A Expired - Fee Related JP3348973B2 (en) 1994-05-20 1994-05-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JP3348973B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4284287B2 (en) 2005-03-04 2009-06-24 株式会社東芝 Electronic device, circuit board and supported member

Also Published As

Publication number Publication date
JP3348973B2 (en) 2002-11-20

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