JPH07302966A - Wiring-board correction apparatus and wiring-board correction method using this apparatus - Google Patents

Abstract

PURPOSE:To provide a method and an apparatus in which a short circuit be tween interconnections on a board is repaired. CONSTITUTION:The ultraviolet part of a halogen lamp 11 is cut by a filter 13. While a short-circuited part on a board 17 which has been coated with a resist is being observed through an eyepiece 15 and an objective 16, it is irradiated. Then, the filter 13 is removed, a latent image is formed on the resist by means of ulttaviolet rays, the latent image is developed, and a mask is formed. After that, a defect part is etched and removed via the mask.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a repairing device and a repairing method for repairing a short circuit defect such as wiring.

[0002]

2. Description of the Related Art In recent years, in the field of information equipment and home TV receivers, thin and highly visible image display devices have been demanded. Conventionally, as a thin image display device, for example, a liquid crystal display device, an EL display device, a plasma display, or the like has been developed.
Due to problems such as colorized brightness, it cannot be said that the performance required by the market is sufficiently satisfied.

Therefore, as a flat image display device, a fluorescent substance light emitting type image display device which forms an image by emitting fluorescent substance by electron emission is expected. Examples of the electron emitting device include a field emission type (hereinafter abbreviated as FE), a metal / insulating layer / metal type (abbreviated as MIM), and a surface conduction type electron emitting device.

As an example of the FE type, W. P. Dyke &
W. W. Dolan, "field emissio"
n "Advance in Electron Ph
ysics, 8, 89 (1956) and the like are known.

An example of MIM is C.I. A. "Mead,"
The tunnel-emission ampli
fier ", J. Appl. Phys., 32,646.
(1961) and C.I. A. Spindt, "Physi
cal properties of thin-fi
lm field emission cathode
s weth mollybdenum cones ”,
J. Appl. Phys. , 47, 5248 (197)
6) etc. are known.

As an example of the surface conduction electron-emitting device type, M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, (1965) and so on. The surface conduction electron-emitting device (SCE) utilizes a phenomenon in which a thin film having a small area formed on a substrate causes electron emission by causing a current to flow in parallel to the film surface.
As the surface conduction electron-emitting device, one using the SnO ₂ thin film by Elinson et al., One using the Au thin film [G. Dittmer: "Thin Solid Fi
lms ”, 9, 317 (1972)], In ₂ O ₃ / S.
nO ₂ thin film [M. Hartwell and
C. G. Fonstad: "IEEE Trans. E
D Conf. , 519, (1975)], by a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1]
No., p. 22 (1983)] and the like.

In a typical structure of these surface conduction electron-emitting devices, two device electrodes are arranged so as to face each other so as to have a space, and a thin film is formed over the space between the electrodes. Further, an electric field is applied to the thin film as forming to locally destroy, deform or change the property of the thin film so that the thin film has an electrically high resistance state to form an electron emitting portion.
An image display device can be manufactured by combining and drawing such an electron-emitting device and a phosphor.

[0008]

These phosphor-emissive image display devices include electron-emitting devices and electron-emitting devices arranged in a matrix on one of two glass substrates having a size corresponding to the screen size. The image display device constituent elements such as row-direction wirings and column-direction wirings for driving the device are formed as the element substrate, the other substrate is formed with a phosphor to face it as a face plate, and the side walls are combined to form a frit. It is formed by sealing with glass [Japanese Patent Application No. 05-78165].

Here, an image display device using an electron-emitting device will be briefly described. FIG. 4 is a partial equivalent circuit diagram of the image display device. An electron-emitting device 43 is formed by being connected to each intersection of a plurality of column-direction wirings 41 and a plurality of row-direction wirings 42 orthogonal to these column-direction wirings 41.
Although not shown in the drawing, an interlayer insulating film is formed at the intersection of the column-directional wiring 41 and the row-directional wiring 42, and the column-directional wiring 41 and the row-directional wiring 42 are insulated. Electrons can be emitted from the electron-emitting device 43 by appropriately selecting the column-direction wiring 41 and the row-direction wiring 42 and applying an electric field.

Since a relatively large amount of current needs to flow through the electron-emitting device, these wiring materials are
Au, Cu, Ag, or the like that does not easily cause electromigration is used.

The manufacturing method of these flat image display devices is as follows.
Since it is manufactured by almost the same method as the manufacturing method of the liquid crystal display device, there is a problem that the number of electrodes increases and the number of defects generated between wirings per substrate increases as the definition and the area increase. . However, since the manufacturing cost of these element substrates is high, it is desirable to correct defective portions if they are a small number of defects and to make them nondefective, rather than defectively discarding defective substrates.

The types of defects can be roughly classified into defects due to disconnection and defects due to short circuit. Here, there is a possibility that defects due to disconnection can be remedied by supplying drive signals from both ends of each wiring. On the other hand, in the horizontal direction, that is, a short-circuit defect between adjacent wirings formed in the same plane (short-circuit between adjacent wirings) and in the vertical direction, that is, a short-circuit at an intersection between two types of wirings that are stacked via an insulating layer. Defects (interlayer shorts) are displayed as line defects, so the defects need to be corrected.

Conventionally, in the manufacture of liquid crystal display devices, laser light (YAG: wavelength = 1.06) has been used to correct such defective portions.
μm) is used, and is corrected by cutting both ends of the wiring of the inter-layer short-circuit defect portion 53 generated between the row-direction wiring 51 and the column-direction wiring 52 as shown in FIG. Was there.

However, the conventional wiring cutting method using laser light has the following problems. That is, (1) upsizing of the device, operability and versatility. (2) Heat effect and splash (scattering) during processing. (3) Limitation of wiring material.

With respect to (1), there is a problem in that the operation is complicated for improving the functionality and it takes time to determine the position of the defect portion and correct it.

With respect to (2), there are drawbacks such that the heat generated when the substrate is irradiated with the laser adversely affects the device characteristics, and the defective portion blown by the laser is redeposited.

As for (3), wiring materials Al, Cr, and ITO (Indium-T) used in liquid crystal display devices and the like are used.
In-Oxide) is effective, but a wiring material Au used for an image display device using a surface conduction electron-emitting device that requires a relatively large amount of current to flow,
It was difficult to cut Cu, Ag, etc. Further, the conventional method of cutting the wiring and repairing the short-circuit defective portion has a drawback that a line defect occurs when a plurality of defects occur in the same line.

Therefore, the present invention has been made in view of the problems of the above-mentioned conventional example, and the wiring materials are Au, Cu, A.
Even in the case of g or the like, the short-circuit defect portion can be corrected. Further, it is possible to remove and correct only the vicinity of the short-circuit defect portion without disconnecting the wiring, which greatly improves the yield of the image display device, and has almost no limitation on the wiring material. It is an object of the present invention to provide an excellent correction device and correction method.

[0019]

To achieve the above object, the present invention provides an optical lens system for observing a sample, which comprises an objective lens and an eyepiece lens, and an optical path shared through the objective lens and with the optical lens system. In the wiring board correction device comprising an exposure system having a light source for irradiating the sample with
A wiring board correction device is provided, which comprises a diaphragm for adjusting a selective exposure region of an optical path between the light source and the objective lens, and a filter which does not transmit a photosensitive wavelength region of a photosensitive resin. is there.

Further, according to the present invention, a wiring board is coated with a photosensitive resin, and the defective portion of the wiring of the wiring board coated with the photosensitive resin is corrected by the light passing through the filter. Detecting and adjusting the aperture to adjust the selected area to irradiate the defective area with irradiation light, then remove the filter and irradiate the defective area, form a photosensitive resin pattern, and then etch The wiring board is a substrate for an image display device composed of surface conduction electron-emitting devices, and the wiring material is Au, Cu, or Ag.
Including including.

[0021]

Embodiments of the present invention will now be described in detail with reference to the drawings.

Embodiment 1 FIG. 1 is a basic configuration diagram of an optical system of a correction device according to the present invention. Almost the same as a commonly used optical microscope as shown in FIG.
It has the same configuration.

That is, the illumination light generated by the halogen lamp 11 passes through the collector lens 12, is sufficiently collimated, and then passes through the filter 13. The filter here has absorption in the ultraviolet region, and the light wave (visible light) transmitted through this filter does not expose the resist. By detaching this filter, a shutter for ultraviolet rays can be obtained. Further, the light wave that has passed through the filter passes through the field stop as illumination light. The illumination light is then half mirror 1
9, the aperture image of the field stop is formed on the wiring board 17 by the objective lens, and at the same time, the eyepiece 15
Through it, it can be observed as an exposure area by the illumination light together with the image on the wiring board 17.

Therefore, an optical lens system including the objective lens 16, the mirror 5, the prism 6, the eyepiece lens 15, etc., the halogen lamp 11 as the light source, the collector lens 12,
An exposure system including the filter 13, the diaphragm 14, the mirror 5, the objective lens 16 and the like shares an optical path portion including the mirror 5 and the objective lens 16.

Here, the aperture of the field stop can be adjusted to match the defective portion on the wiring board 17, and then the filter 13 can be removed to illuminate only the defective portion with the illumination light. In this way, the size of the aperture image can be adjusted by the field stop 14 and exposed while actually observing the defective portion on the wiring board 17. Four types of objective lenses 16 are attached, and the exposure area can be adjusted by the magnification of the objective lens 16 and the aperture diameter of the field stop 14.

In addition, the XY table 18 on which the wiring board 17 is mounted can mount a board up to 6 inches, and is a stepping motor drive table specification capable of positioning at a pitch of 2.0 μm, and the movable range is 200. × 200
mm.

The light source emits light including a wavelength region necessary for observing the pattern of the wiring board, a short-circuit defect portion, and a wavelength region necessary for forming a predetermined latent image on the photosensitive resin. Therefore, specifically, those that emit visible light or ultraviolet light are preferable. Examples of such a light source include a halogen lamp, a xenon lamp, a halogen-xenon lamp and the like.

The filter does not transmit the wavelength region forming the latent image of the photosensitive resin described later, but transmits the wavelength region necessary for observation. Specifically, the filter for epi-illumination, such as G530 O560, is used. preferable.

The wiring board repairing apparatus of the present invention has both the function of the conventional microscope and the function of exposing the photosensitive resin, and therefore can be constructed by utilizing most of the configuration of the conventional microscope.

The correction device as described above has an advantage that the device can be easily increased in size and is excellent in versatility.

Furthermore, since the optical axes of the observation system and the exposure system are the same,
Accurate exposure can be performed while observing the actual pattern. Further, the exposure area is defined by the objective lens 16 and the field stop 14.
It is possible to selectively expose only the defective portion many times, and the manufacturing yield of the image display device can be remarkably improved.

Next, a case will be described in which a short-circuit defective portion between wirings of a wiring board is repaired using the above-mentioned repairing device.

FIG. 2 shows a step of repairing the short-circuit defective portion 22 by using the above-mentioned repair device when the short-circuit defective portion 22 is generated between the column-direction wiring patterns 25a and 25b of the wiring substrate of the image display device. FIG.

As shown in FIG. 2A, a photoresist pattern is formed on the cleaned substrate 21 made of soda-lime glass by a photolithography method, and then Cr having a thickness of 10 nm and Au of 600 nm are vapor-deposited. After the sequential deposition, the pattern 25 of the wiring in the desired column direction is formed by the lift-off method.
A wiring board 21 having a and b formed thereon was obtained. Then, the short circuit defect between wirings was detected and the short circuit defect part 22 was detected. This detection method was based on the open / short check method.

Then, the photoresist 2 is used as a photosensitive resin.
3 (trade name AZ1370: Hoechst) wiring board 2
1 was coated on the entire upper surface and dried at 90 ° C. At this time, the thickness of the photoresist is about 1.0 μm to 2.0 μm (FIG. 2A).

Subsequently, the correction device 20 described in the first embodiment.
Was used to limit the field of view to the short-circuit defect portion 22, and the size of the aperture image was adjusted by the field stop. By removing the filter, only the short-circuit defect portion 22 was selectively exposed. As a result, the latent image portion 2 is formed on the resist portion above the defect portion 22.
8 was formed. The appropriate exposure time at this time is 3 to 5 seconds (FIG. 2B).

Next, a developing solution (trade name: AZ-MIF312D
Developer: manufactured by Hoechst Co., Ltd.) was used to form an etching mask 24 from which the latent image portion 28 was removed. The etching mask 24 thus formed is
The size of the aperture image of the correction device 20, that is, the short-circuit defect portion 22
Only the photoresist 23 in the vicinity of the upper part is removed, and the photoresist 23 remains as it is in other portions (FIG. 2C).

Then, an Au-based etching solution for the wiring material Au is used to remove the Au in the short-circuited portion 22.
Was further etched, and Cr was sequentially etched with a cerium nitrate secondary ammonium-based etching solution. As a result, the short-circuit portion 22 was removed and the short-circuit defect was corrected (FIG. 2 (d)).

Finally, the etching mask 24 was entirely removed using a stripping solution for the mask 24 (trade name: Microposit Remover 140: manufactured by Shipley).

As a result, the column-direction wiring patterns 25a and 25b in which the short-circuit defect portion was corrected were obtained (FIG. 2).
(E)).

According to the above method, the Au of the image display device using the electron-emitting device which requires a relatively large amount of current to flow.
Wiring can be easily modified using. Further, unlike the conventional method of cutting the wiring and repairing the short-circuit defect portion, the method of the present invention also solves the problem of the line defect that occurs when a plurality of defects occur on the same line. In addition, the correction device and the correction method described in the present embodiment have an advantage that they can be corrected by a simple method without requiring a simple and expensive device or advanced technology.

In addition, since the photolithography technique is used, unlike the conventional correction using a laser beam, the influence of heat on the wiring board during processing and splash (scattering).
Will not be adversely affected. Furthermore, because it is the one that you actually observe with your eyes and correct the observed portion as it is,
The correction accuracy of the defective portion is also improved, and the yield of the image display device can be significantly improved.

Embodiment 2 Another embodiment of the present invention will be described below with reference to the drawings. FIG. 3 shows that a short circuit defect portion 34 is generated by penetrating the interlayer insulating film 33 between both patterns of the matrix wiring including the column direction wiring pattern 32 and the row direction wiring pattern 35 of the wiring board 30 for the image display device. FIG. 13 is a process cross-sectional view showing a repair process of the wiring board 30 when the wiring board 30 is present.

As shown in FIG. 3A, a photoresist pattern is formed on the cleaned substrate 31 made of soda-lime glass by a photolithography method, and further, a vacuum vapor deposition method is used to form a Cr film having a thickness of 10 nm and an Au film having a thickness of 600 nm. Then, the desired column-direction wiring pattern 3 is formed by the lift-off method.
2 was formed on the substrate 31. Subsequently, an interlayer insulating film 33 made of SiO ₂ and having a thickness of 1000 nm was deposited by the RF sputtering method and processed into a desired pattern by the photoetching method. Next, a photoresist pattern is formed on the entire surface by a photolithography method, and further, Ti having a thickness of 5 nm and Au having a thickness of 1000 nm are sequentially deposited by a vacuum evaporation method, and then a desired row-direction wiring pattern 35 is formed by a lift-off method.
To form a matrix wiring substrate 30.

When this wiring board 30 was inspected for a product, a short circuit defect between the column direction wiring and the row direction wiring was detected, and the short circuit defect portion 34 was detected.

Therefore, as shown in FIG. 3B, a photoresist layer 36 (trade name AZ1370: manufactured by Hoechst Co., Ltd.) was applied to the entire upper surface of the wiring board 30 to be formed, and dried at 90 ° C. At this time, the thickness of the photoresist layer 36 was about 1.0 μm to 2.0 μm.

Next, as shown in FIG. 2C, the photoresist layer above the short-circuit defect portion 34 is selectively exposed by using the repairing device 20 described in the embodiment 1 to form the latent image portion 39. did. The exposure time at this time was 3 to 5 seconds.

Subsequently, as shown in FIG. 3D, the latent image portion 39 is developed by using a developing solution (trade name: AZ-MIF312 Developer: manufactured by Hoechst).
An etching mask 38 having an opening 38a was formed above the defective portion 34.

Next, as shown in FIG. 3E, wiring material A
A short-circuit defect portion 34 is formed by using an iodine-based etching solution for u.
Au was etched, and then Ti was sequentially etched with a hydrofluoric acid-based etching solution to remove the short-circuit defect portion 34 by etching to correct the short-circuit defect.

Finally, as shown in FIG. 3 (f), an etching mask 3 is formed by using a stripping solution for the etching mask 38 (trade name: Microposit Remover 140: manufactured by Shipley).
8 was completely removed. As a result, it was possible to form a matrix wiring substrate having no short circuit defect between the row-direction and column-direction wiring patterns 35 and 32.

Further, although not shown, the column direction wiring 32
Then, the surface conduction electron-emitting device was formed by connecting to the row wiring 35.

The column direction wiring pattern 32 and the row direction wiring pattern 35 thus formed with the interlayer insulating film 33 interposed therebetween.
The matrix wiring consisting of is used as a substrate for an image display device using an electron-emitting device which requires a relatively large amount of current to flow. According to the present invention, however, the wiring substrate using Au is easy to modify. And can be done easily.
Further, a short circuit defect generated between layers can be repaired without breaking the wiring. In addition, by correcting the short circuit between the wirings by the repairing device and the repairing method of the present invention, it is possible to form a wiring substrate for an image display device having no defect.

By the way, the present invention is not limited to the above-mentioned embodiments. For example, although soda lime glass was used in the above-mentioned embodiments, other insulating substrates such as # 7059 glass (Corning Co.), quartz, and A semiconductor substrate, a piezoelectric substrate or the like can be used.

Furthermore, in the above embodiment, the column direction wiring material is made of Cr.
Although -Au was used, for example, Cr-Cu, Cr-Ag, T
It may be i-Cu, Ti-Ag, or a combination of other materials. Further, these alloys may be used. Also,
In the above embodiment, two layers of laminated wiring were used, but single layer, three layers,
Or it may be more than that and may be determined according to the specifications. In addition, with respect to the wiring material and the lamination, the same can be said for the row-direction wiring in the above embodiment. Further, in the above embodiment, the silicon oxide film is used as the interlayer insulating film for the wiring in the column direction and the row direction, but other oxide film or a nitride film such as silicon nitride may be used. Further, an insulating film such as SOG or polyimide which can be formed by coating may be used.

As the photosensitive resin, a commercially available positive type resist is generally preferred.

Although wet etching is used to remove the short-circuited portion in the above embodiments, dry etching may be used, and it may be determined according to the type of material, the specifications of the intended element, the etching rate, and the like. Further, in the above embodiment, only the eyepiece lens was observed as the observation optical system of the correction apparatus, but both observations may be performed simultaneously using a color monitor television.

Further, in the above embodiment, the repairing apparatus and the repairing method of the present invention are used for repairing the short circuit defect of the wiring substrate of the image forming apparatus using the surface conduction electron-emitting device, but the invention is not limited to this. Instead, it can be used for repairing other image forming apparatus, for example, a wiring board of a liquid crystal display. In addition, it is needless to say that the present invention can be applied to repairing defects of photomasks, repairing electrode defects of other semiconductor devices and optical semiconductor devices, and repairing wiring defects.

[0058]

As described above, according to the correction device and the correction method of the present invention, (1) an inexpensive device having excellent versatility, requiring no advanced technique, and having a simple process and high reliability. Defects can be fixed. (2) It can be corrected without damaging the element at the time of correction. (3) There is no limitation on the wiring material, and any material that can be etched can be used for defect correction. (4) The accuracy of correcting the defective portion is significantly improved. (5) Since the observation optical system and the correction exposure system are the same, they can be easily corrected.

In addition, when the present invention is applied to an image display device using matrix wiring, it is possible to obtain highly reliable interlayer insulation in the matrix wiring structure, which leads to high yield.
Moreover, a highly reliable image display device can be provided.

[Brief description of drawings]

FIG. 1 is a basic configuration diagram showing an example of a correction device according to the present invention.

FIG. 2 is a wiring correction process diagram showing an embodiment of the present invention.

FIG. 3 is a wiring correction process diagram showing another embodiment of the present invention.

FIG. 4 is a partial equivalent circuit diagram of a wiring board of the image display device.

FIG. 5 is an explanatory plan view showing a conventional correction method.

[Explanation of symbols]

 5 Mirror 6 Prism 11 Halogen Lamp 12 Collector Lens 13 Filter 14 Field Stop 15 Eyepiece 16 Objective Lens 17 Wiring Board 18 XY Table 20 Repair Device 21 Wiring Board 22 Short-Circuit 23 Photoresist 24 Etching Mask 25 Column Direction Wiring Pattern 31 Matrix wiring board 32 Column direction wiring pattern 33 Interlayer insulating film 34 Short circuit defect part 35 Row direction wiring pattern 36 Photoresist layer 38 Etching mask 41 Column direction wiring 42 Row direction wiring 43 Electron emitting element 51 Row direction wiring 52 Column direction wiring 53 Short circuit Defect part 54 Cut part

Claims (3)

[Claims] 1. A wiring board comprising an optical lens system comprising an objective lens and an eyepiece lens for observing a sample, and an exposure system having a light source for irradiating the sample through the objective lens and sharing an optical path with the optical lens system. In the repair device, there is provided a diaphragm for adjusting a selective exposure region of an optical path between the light source and the objective lens, and a filter which does not transmit a photosensitive wavelength region of a photosensitive resin. 2. A wiring board is coated with a photosensitive resin, and the correction device according to claim 1 is used to detect a defective portion of the wiring of the wiring board coated with the photosensitive resin by light passing through a filter. , Adjusting the aperture that adjusts the selected area to irradiate the defective area with irradiation light, then removing the filter and irradiating the defective area, forming a photosensitive resin pattern, and then etching the defective area A method for repairing a wiring board, comprising: 3. The wiring substrate is a substrate for an image display device including a surface conduction electron-emitting device, and the wiring material is A
The correction method according to claim 2, comprising u, Cu, or Ag.