JPH07273430A - Manufacture of electric wiring board - Google Patents

Abstract

PURPOSE:To locally heat an etching solution in the vicinity of a short-circuit part, accelerate etching, and selectively eliminate the short-circuit part defect, by applying a current to the short-circuit part, after etching solution of wiring material is brought into contact with the short-circuit defect part generated at the point of intersection between multilayered wirings formed via an insulating layer and in the gap between adjacent wirings. CONSTITUTION:On a substrate 4 composed of a cleaned blue plate glass, Cu and Au are deposited to have the respective specified thicknesses by a vacuum evaporation method, and then worked into a desired pattern by a photoetching method. Thus a row direction wiring 1 is formed. An interlayer insulating film 5 composed of SiO2 is deposited by an RF sputtering method, and worked into a desired pattern by a photoetching method. By a lift-off method, a Ti film and an Au film having the respective specified thicknesses are formed by a vacuum evaporation method, and an unnecessary film is eliminated. Thus a column direction wiring 2 is formed. A short-circuit part 6 between the wirings is detected, and thereon etching solution 7 is dripped. The short-circuit part 6 is etched and eliminated by applying a current across the wirings having short-circuit defect part 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electric wiring board, and more particularly to a method for manufacturing an electric wiring board used for a flat image display device or the like.

[0002]

2. Description of the Related Art In recent years, in the field of information equipment and home TV receivers, thin and highly visible image display devices have been demanded. Conventionally, as a thin image display device, for example, a liquid crystal display device, an EL display device, a plasma display, or the like has been developed.
There are problems in colorization and brightness, and it cannot be said that the performance required by the market is sufficiently satisfied.

Therefore, as a flat image display device, a fluorescent substance light emitting type image display device which emits a fluorescent substance by emitted electrons to form an image is expected. Examples of the electron-emitting device include field emission type (hereinafter abbreviated as FE), metal / insulating layer / metal type (hereinafter abbreviated as MIM), surface conduction type, and the like.

As an example of the FE type, W. P. Dyke &
W. W. Dolan, "Fielddemissio
n ", Advance in Electron Ph
Those described in ysics, 8, 89 (1956) and the like are known.

An example of MIM is C.I. A. Mead,
"The tunnel-emission ampl
ifer ", J. Appl. Phys., 32, 64.
6 (1961) and C.I. A. Spindt, "Physi
cal properties of thin-fil
m field emission cathodes
with mollybdenum cones ”,
J. Appl. Phys. , 47, 5248 (197)
Those described in 6) and the like are known.

As an example of the surface conduction electron-emitting device type,
M. I. Elinson, Radio Eng. Ele
ctron Pys. , 10, (1965) and the like are known.

The surface conduction electron-emitting device (SCE) utilizes a phenomenon in which a thin film having a small area formed on a substrate causes electron emission by flowing an electric current in parallel with the film surface. As the surface conduction electron-emitting device, one using the SnO ₂ thin film by the above-mentioned Erinson, one using the Au thin film [G. Dittmer: "Thin So
lid Films ", 9, 317 (1972)], I
n ₂ O ₃ / SnO ₂ thin film [M. Hartwe
ll and C.I. G. Fonstad: “IEEE
Trans. ED Conf. "519, (197
5)], a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like have been reported.

A typical method of manufacturing these surface conduction electron-emitting devices is to arrange two device electrodes adjacent to each other, and
A thin film is formed over the distance between two electrodes, and then an electric field is applied to the thin film, called forming, to locally destroy, deform, or alter the thin film, and through the process of making it into an electrically high resistance state, the electron emission part is formed. Is forming. An image display device is manufactured by adding a function of drawing by combining the electron-emitting device thus manufactured and the phosphor. These phosphor-emission-type image display devices specifically use an electron-emitting device in which two glass substrates having a size corresponding to a required screen size are used, and one of them is arranged in a matrix, and each electron-emitting device. A frit glass is used as an element substrate on which image display device components such as row-direction wiring and column-direction wiring for driving the elements are formed, and the other is formed as a face plate by forming a phosphor. It is formed by sealing with.

Since it is necessary to pass a relatively large current through the electron-emitting device, Au, Cu or A which is less likely to cause electromigration in these wiring materials.
g is used.

Since the manufacturing method of these flat panel image display devices and the like is almost the same as the manufacturing method of liquid crystal display devices, the number of electrodes increases and the wiring per substrate increases with the progress of higher definition and larger area. There is a problem that the number of defects increases.

Since these element substrates have a high manufacturing unit price, it is desirable to correct defective parts and correct them to make them defective rather than immediately discarding defective products.
The types of defects can be roughly classified into defects due to disconnection and defects due to short circuit. Here, the defect due to the disconnection may be relieved by supplying the drive signal from both ends of each wiring. On the other hand, in the horizontal direction, that is, a short-circuit defect between adjacent wirings formed in the same plane (short-circuit between adjacent wirings) and in the vertical direction, that is, a short-circuit defect at an intersection between two types of wirings laminated via an insulating layer. Since (interlayer short-circuit) appears on the image as a line defect, it is necessary to correct the defect.

Conventionally, in the manufacture of liquid crystal display devices and the like,
Laser light (YAG: wavelength 1.06 μm) is used to correct such defective portions, and wiring 82b is used as shown in FIG.
Both ends of the wiring at the inter-layer short-circuited portion 86 between the wiring 81b and the wiring 81b are cut (cutting portions 88a, 88b) for correction.

A conventional method of cutting a wiring using a laser beam is Al and C which are wiring materials used in a liquid crystal display device or the like.
It is effective for metal materials such as r and ITO (Indium-Tin-Oxide). However, although an image display device using an electron-emitting device that needs to flow a relatively large amount of current uses Au, Cu, or Ag as a wiring material, it is difficult to cut the wiring using these materials by laser light. . Further, the conventional method of cutting the wiring and correcting the short-circuited portion has a problem that a line defect occurs when a plurality of defects occur on the same line.

[0014]

As a result of various studies for solving the above problems, the present inventor has found that the short-circuit defect portion has a higher resistance than the wiring, so that a current is passed through the wiring in a state of being in contact with the etching solution. And the short-circuit defect part selectively heats up, the etching speed of the short-circuit defect part increases and the short-circuit defect part is selectively etched and removed, whereas the wire hardly heats up, so there is no change in the etching rate. Therefore, it was conceived that only the short-circuit defect portion can be selectively etched and removed, and the present invention was completed, and the purpose thereof is to provide a method for manufacturing an electric wiring board which solves the above problems. To provide.

[0015]

In order to achieve the above object, the present invention is directed to manufacturing an electric wiring board in which electric wiring made of a plurality of patterns insulated from each other by using an electrically conductive material is formed on the board. In the method, an electric wire that shares at least the short-circuit defective portion by contacting at least the short-circuit defective portion of the wiring with an etching solution of the electrically conductive material as a step of correcting the short-circuit defective portion during manufacturing of the electric wiring including the plurality of patterns. It proposes a method for manufacturing an electric wiring board, characterized in that it comprises a step of applying a voltage between them to cause an electric current to flow through the short-circuit defective portion and removing the short-circuit defective portion. To make contact with each other by immersing the substrate in an etching solution so as to make contact with the electric wiring through a plurality of column-direction wirings and insulating layers used in a flat panel image display device. It is a matrix-shaped wiring composed of a plurality of stacked row-direction wirings, the short-circuit defective portion is present between a plurality of adjacent wirings formed in the same plane, and the short-circuit defective portion is insulated. That it exists at the intersection of a plurality of wiring patterns laminated via a layer, that the etching liquid etches the electrically conductive material at room temperature at a rate of 1 nm or less per second, and It includes that the electrically conductive material is gold, copper or silver or a material containing these.

[0016]

According to the method for manufacturing an electric wiring board of the present invention, an etching solution for the wiring material is brought into contact with at least the intersection between the laminated wirings formed via the insulating layer and the short-circuit defect portion generated between the adjacent wirings. After that, the short-circuited portion is energized to locally heat the etching solution in the vicinity of the short-circuited portion to allow the etching to proceed to selectively remove the short-circuited defective portion. In other words, the fact that Joule heat is generated by passing an electric current through the short-circuit defect portion and that the etching grade changes with temperature are utilized, and the short-circuit defect portion is repaired by heating the short-circuit portion and locally etching it. Is to do.

The present invention will be described in detail below with reference to the drawings.

First, a general method for manufacturing an electric wiring board will be described with reference to FIG.

In FIG. 1A, reference numeral 4 denotes a substrate, which is made of an insulator or a semiconductor. Specific examples of these include quartz glass, glass with a reduced content of impurities such as Na, soda-lime glass, and S formed by soaking on soda-lime glass.
Examples thereof include a glass substrate on which iO ₂ is laminated, ceramics such as alumina, and silicon and gallium arsenide.

Next, the column-direction wiring 1, the interlayer insulating layer 5, and the row-direction wiring 2 are formed on the substrate 4.

The row wiring 2 and the column wiring 1 are formed by a vacuum evaporation method, a sputtering method, a plating method, a printing method, or the like. The wiring is made of an electrically conductive material with a desired pattern, and has a film thickness so that almost uniform voltage can be supplied to many elements,
Determine the wiring width, etc. As a material, Au, Cu and Ag are low in resistance and resistant to electromigration.
Is preferred. When the substrate 4 is a semiconductor substrate, an insulating layer is formed on the surface and wiring is formed thereon. An interlayer insulating layer 5 is provided between the plurality of row-direction wirings 2 and the plurality of column-direction wirings 1 to form a matrix wiring.

Here, as the interlayer insulating layer 5, a vapor deposition method,
SiO ₂ or the like formed by a sputtering method, a printing method, or the like is preferable, and is formed in a desired shape on the entire surface or a part of the substrate 4 on which the column-directional wiring 1 is formed to insulate the column-directional wiring 1 and the row-directional wiring 2. There is.

In a normal manufacturing process, an electric wiring board in which each wiring is insulated and a short-circuit defect is not present is manufactured. However, a part of the insulating layer is damaged due to an unavoidable cause such as an accident. However, short-circuit defects may occur between the wirings.

FIG. 1 (a) shows a state in which the short-circuit defect portion has occurred. That is, in FIG. 1A, 6 is a short-circuit defective portion, and this defective portion 6 is an interlayer insulating layer 5 at the intersection of the column-directional wiring 1 and the row-directional wiring 2 when matrix wiring is formed.
This is a short-circuit defect caused by the pinhole 20 caused in the column direction wiring 1 and the row direction wiring 2 are electrically connected.

The manufacturing method of the present invention includes a step of removing such a short-circuit defect portion 6 in the manufacturing method.

First, as shown in FIG. 1A, an etching liquid 7 of a wiring material is dropped on the short-circuit defective portion 6 and the etching liquid 7 is brought into contact with the short-circuit defective portion. A known etching liquid can be used.

The etchant used is a wiring material at room temperature of 1 nm / sec or less, more preferably 0.1 to 1 nm.
It is suitable to process at an etch rate of / sec.

Subsequently, an electric field is applied to the column-direction wiring 1 and the row-direction wiring 2 having the short-circuited portion to generate heat near the short-circuited defective portion, whereby the short-circuited defective portion can be selectively removed by etching. In such a chemical etching, the reaction rate increases about twice as much as the temperature rises by 10 ° C. Therefore, by raising the temperature about 70 ° C. above room temperature, it is about 100 times faster than at room temperature. It can be etched. Therefore, the wiring of the short-circuited portion can be locally removed quickly by etching, so that the short-circuit defect can be corrected. The voltage applied to the short-circuit defect portion 6 cannot be limited because it varies depending on the cross-sectional area of the wiring and the resistance value of the short-circuit defect portion 6, but is generally preferably 1 to 3V. By flowing this current (0.1 to 0.5 A), the temperature of the short-circuit defect portion rises by about 50 to 200 ° C.

Through the above steps, the short-circuit defect portion 6 is etched, and the short circuit between the column-direction wiring 1 and the row-direction wiring 2 is removed as shown in FIG. 1 (b). When the wiring is fine, the above operation can be performed under a microscope.

The method of contacting the etching solution with the short-circuit defect portion 6 is not limited to the above method, and it is also possible to immerse the whole or a part of the wiring board in the etching solution.
In this case, when a voltage is applied to all the row-direction and column-direction wirings, all the short-circuit defects existing on the wiring board can be removed at once. Therefore, in this case, the short circuit can be removed without checking the presence or absence of a defect and where the defect is in advance, and the workability is good.

[0031]

【Example】

 First Embodiment A first embodiment of the present invention will be described with reference to FIG.

First, as shown in FIG. 1A, 10 nm thick Cr and 600 nm thick Au are deposited on the cleaned substrate 4 made of soda-lime glass by a vacuum vapor deposition method, and then a desired photoetching method is performed. It was processed into a pattern to form the column-direction wiring 1. Subsequently, an interlayer insulating film 5 made of SiO ₂ and having a thickness of 1000 nm was deposited by RF sputtering and processed into a desired pattern by photoetching. Subsequently, a lift-off method is used to form Ti having a thickness of 5 nm and a thickness of 500 n.
m of Au was formed by a vacuum vapor deposition method, and an unnecessary film was removed to form the row wiring 2. Then, the short circuit defect between wirings was detected and the short circuit part 6 was detected.

Next, as shown in FIG. 1 (b), 0.01 ml of the etching liquid 7 was dropped on the short circuit portion 6. The etching solution was KI: I ₂ : H ₂ O = 1: 1: 4 (volume ratio). Subsequently, the short-circuited portion was removed by etching by passing a current between the wirings having the short-circuited defective portion 6. At this time, the short-circuit portion 6 was etched in a few seconds, and the etching was completed when the short-circuit portion disappeared. However, although the vicinity of the short-circuited portion was removed by etching, it was a small region with respect to the wiring width, so the wiring did not break.

By correcting the short circuit between the wirings by the above manufacturing method, the wiring board having no defect could be formed. Example 2 In this example, the column-directional wiring 1, the interlayer insulating film 5, and the row-directional wiring 2 were formed in the same manner as in Example 1. Subsequently, the take-out wiring portion was protected with an O-ring and a silicone sealant, and then the substrate was immersed in the etching solution 7. At this time, the etching solution 7 was prevented from coming into contact with the wiring take-out portion. The same etching solution as that used in the example was used.

Then, by applying a voltage to all the wirings, the short-circuit defect portion 6 was removed by etching to correct the short-circuit defect. According to this method, even if the short-circuit defective portion is not inspected, only the heat-generating portion of the short-circuited portion is removed by etching, so that the inspection step can be omitted. Example 3 In this example, the column-directional wiring 1, the interlayer insulating film 5, and the row-directional wiring 2 were formed in the same manner as in Example 1. Then, when a short-circuited portion between the wirings was inspected, a short-circuited portion was detected between adjacent row-direction wirings 2. Therefore, as in Example 1, after the etching liquid 7 was dropped on the short-circuited portion between the wirings, the short-circuited portion was removed by etching by applying a current between the short-circuited wirings to correct the short-circuit defect.

By correcting the short circuit between the adjacent wirings by the above manufacturing method, the electrode wiring having no defect could be formed. Fourth Embodiment Next, a fourth embodiment of the present invention will be described.

Here, the structure of the element substrate of the flat image display device using the surface conduction electron-emitting device and the manufacturing method thereof will be described with reference to FIGS.

FIG. 2 is a partial equivalent circuit diagram of the flat panel image display device.

An electron-emitting device 3 is formed at each intersection of a plurality of column-direction wirings 1 and a plurality of row-direction wirings 2 orthogonal to these column-direction wirings 1. Although not shown in the drawing, an interlayer insulating layer is formed at the intersection of the column-directional wiring 1 and the row-directional wiring 2 to insulate the column-directional wiring 1 and the row-directional wiring 2. . Electrons can be emitted from the electron-emitting device 3 by appropriately selecting the column-direction wiring 1 and the row-direction wiring 2 and applying an electric field.

First, as shown in FIG. 1A, a soda lime glass cleaned in the same manner as in Example 1 was coated with C having a thickness of 10 nm.
The column-direction wiring 1 made of Cu and having a thickness of 600 nm was formed. Subsequently, an interlayer insulating film 5 made of SiO ₂ and having a thickness of 1000 nm was deposited by RF sputtering and processed into a desired pattern by photoetching. Subsequently, a lift-off method is used to form Cr having a thickness of 5 nm and Cu having a thickness of 500 nm.
Was formed by a vacuum evaporation method, and the unnecessary film was removed to form the row wiring 2. Then, the short circuit defect between wirings was detected and the short circuit part 6 was detected.

Next, as shown in FIG. 1B, the etching solution 7 was dropped on the short circuit portion 6. Phosphoric acid in the etching solution:
Nitric acid: acetic acid: water = 16: 1: 80: 1 (volume ratio) was used. Subsequently, the short-circuited portion was removed by etching by passing a current between the wirings having the short-circuited portion 6. At this time, the short-circuit portion 6 was etched in a few seconds, and the etching was completed when the short-circuit portion disappeared. However, although the vicinity of the short-circuited portion was removed by etching, it was a small region with respect to the wiring width, so the wiring did not break.

Further, as shown in FIG. 3, the surface conduction electron-emitting device 3 was formed so as to be connected to the row directional wiring 2 and the column directional wiring 1. Although not shown, the surface conduction electron-emitting device 3 is formed by applying organic palladium between opposing device electrodes and then performing heat treatment to form a fine particle film made of palladium oxide fine particles. A voltage was applied (forming processing) to produce an electron emitting portion.

By the manufacturing method as described above, the short-circuit defect generated between the wirings can be corrected without disconnecting the wirings. Therefore, even if a large number of defects occur on the same line, the planar image display device has no defect. The element substrate can be formed.

[0044]

As described above, according to the method of manufacturing the electrode wiring of the present invention, the short circuit defect portion can be repaired even in the wiring using Au, Cu or Ag. Further, since only the short-circuited portion is removed and repaired without cutting the wiring, even if a short-circuiting defect occurs on the same line, it does not become a line defect. Therefore, when the present method is applied to an image display device or the like, there is an effect that the yield at the time of manufacturing can be greatly improved.

[Brief description of drawings]

FIG. 1 is a process drawing showing an example of a manufacturing method according to the present invention.

FIG. 2 is an equivalent circuit diagram of an image display device using a surface conduction electron-emitting device.

FIG. 3 is a plan view showing an example of an element substrate of an image display device using a surface conduction electron-emitting device.

FIG. 4 is a plan view showing a method of repairing a short-circuit defect portion of a conventional example.

[Explanation of symbols]

 1 column direction wiring 2 row direction wiring 3 electron emission part 4 substrate 5 interlayer insulating layer 6 short circuit part 7 etching solution

Claims (8)

[Claims] 1. A method of manufacturing an electric wiring board, comprising: forming a plurality of patterns of electric wiring insulated from each other on a substrate using an electrically conductive material; As a step of correcting the short-circuit defective portion, at least the short-circuit defective portion of the wiring is brought into contact with the etching solution of the electrically conductive material, and a voltage is applied between the electric wires sharing at least the short-circuit defective portion to flow a current through the short-circuit defective portion. A method of manufacturing an electric wiring board, comprising a step of removing the short-circuit defect portion. 2. The method for manufacturing an electric wiring board according to claim 1, wherein an etching solution is dropped onto the short-circuit defect portion and brought into contact therewith. 3. The method of manufacturing an electric wiring board according to claim 1, wherein the board is immersed in an etching solution and brought into contact with the board. 4. The electric wiring is a matrix wiring composed of a plurality of column-directional wirings used in a flat-panel image display device and a plurality of row-directional wirings laminated via an insulating layer. The method for manufacturing an electric wiring board according to any one of claims. 5. The method of manufacturing an electric wiring board according to claim 1, wherein the short-circuit defective portion is present between a plurality of adjacent wirings formed in the same plane. 6. The method of manufacturing an electric wiring board according to claim 1, wherein the short-circuit defect portion is present at an intersection of a plurality of wiring patterns laminated with an insulating layer interposed therebetween. 7. The method for manufacturing an electric wiring board according to claim 1, wherein the etching solution etches the electrically conductive material at room temperature at a rate of 1 nm or less per second. 8. The method of manufacturing an electric wiring board according to claim 1, wherein the electrically conductive material is gold, copper, silver, or a material containing these.