JPH07302762A - Method of forming semiconductor single crystal layer - Google Patents

Method of forming semiconductor single crystal layer

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Publication number
JPH07302762A
JPH07302762A JP9609794A JP9609794A JPH07302762A JP H07302762 A JPH07302762 A JP H07302762A JP 9609794 A JP9609794 A JP 9609794A JP 9609794 A JP9609794 A JP 9609794A JP H07302762 A JPH07302762 A JP H07302762A
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JP
Japan
Prior art keywords
gas
single crystal
crystal layer
hydrogen gas
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9609794A
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Japanese (ja)
Inventor
Kazuhiro Ueda
和浩 上田
Akihiro Miyauchi
昭浩 宮内
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9609794A priority Critical patent/JPH07302762A/en
Publication of JPH07302762A publication Critical patent/JPH07302762A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the flow rate of a hydrogen gas required for the formation time of a semiconductor single crystal layer for making it serviceable in a clean room by using a mixed gas of hydrogen gas and an inert gas as a carrier gas of a material gas. CONSTITUTION:Within a CVD process, a mixed gas comprising hydrogen gas and inert gasses in impurity concentration not exceeding 0.1ppm such as helium, neon, argon, krypton, xenon, etc., is to be used. Besides, a mixed gas comprising hydrogen gas and nitrogen gas in the impurity concentration not exceeding 0.1ppm is also used. Through these procedures, the cleaning effect on the substrate surface by the reducing reaction of hydrogen gas can be secured even if the flow rate of hydrogen gas is reduced, thereby enabling the excellent quality semiconductor single crystal to be produced as well as due to the possibility of reducing the flow rate of hydrogen gas the device to be fitted in a clean room for application.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は化学反応気相成長法によ
る半導体基板上に半導体単結晶層を形成する技術に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a semiconductor single crystal layer on a semiconductor substrate by chemical reaction vapor deposition.

【０００２】[0002]

【従来の技術】化学反応気相成長（Chemical Vapour De
position以後ＣＶＤと略す）法で、半導体基板上に半導
体単結晶層を形成することは、ＣＶＤエピタキシ成長法
として知られている。しかし、ＣＶＤ法による半導体単
結晶層の形成は、形成する単結晶層によって材料ガス，
成長温度，圧力などの条件がかなり異なる。ここでは半
導体基板にシリコン単結晶を用い、この上にシリコン単
結晶層を形成する場合について説明する。2. Description of the Related Art Chemical reaction vapor deposition
Forming a semiconductor single crystal layer on a semiconductor substrate by a method hereinafter referred to as CVD) is known as a CVD epitaxy method. However, the formation of the semiconductor single crystal layer by the CVD method requires the material gas,
Conditions such as growth temperature and pressure are quite different. Here, a case where a silicon single crystal is used for a semiconductor substrate and a silicon single crystal layer is formed thereover will be described.

【０００３】図２は常圧ＣＶＤ装置の説明図である。シ
リコン単結晶層の形成は、次の手順で行う。FIG. 2 is an illustration of an atmospheric pressure CVD apparatus. The silicon single crystal layer is formed by the following procedure.

【０００４】すなわち、 (1）シリコンウエハ１を、成長室３内のサセプタ２の上
に置き、水素(Ｈ2）雰囲気で赤外ランプ９と高周波コイ
ル１０を用いて、１１００℃程度の成長温度まで加熱す
る。基板温度は鏡７を通して放射温度計８を用いて測定
する。That is, (1) the silicon wafer 1 is placed on the susceptor 2 in the growth chamber 3, and the infrared lamp 9 and the high frequency coil 10 are used in a hydrogen (H 2 ) atmosphere to grow at a growth temperature of about 1100 ° C. Heat up to. The substrate temperature is measured using the radiation thermometer 8 through the mirror 7.

【０００５】(2）単結晶層はモノシラン(ＳｉＨ4）ある
いはジクロルシラン（ＳｉＨ2Ｃｌ2）等のシリコン原料
ガスと、水素ガス(Ｈ2）をマスフローコントローラ６を
用いて、流量を制御しながら成長室３に導入し、シリコ
ン単結晶膜をシリコンウエハ１上に形成する。このよう
な装置の場合、成長速度の制御や、基板温度の均一化の
ため、一分間に２０〜１００リットルの水素ガスを流す
必要がある。(2) The single crystal layer is grown while controlling the flow rate of silicon source gas such as monosilane (SiH 4 ) or dichlorosilane (SiH 2 Cl 2 ) and hydrogen gas (H 2 ) by using the mass flow controller 6. It is introduced into the chamber 3 and a silicon single crystal film is formed on the silicon wafer 1. In the case of such an apparatus, it is necessary to flow 20 to 100 liters of hydrogen gas per minute in order to control the growth rate and make the substrate temperature uniform.

【０００６】(3）単結晶層形成後、シリコンウエハ１の
温度を室温まで下げ、成長室３内部の水素ガスを窒素ガ
ス(Ｎ2）等でパージし、シリコンウエハ１を成長室３か
ら取り出す。(3) After forming the single crystal layer, the temperature of the silicon wafer 1 is lowered to room temperature, the hydrogen gas inside the growth chamber 3 is purged with nitrogen gas (N 2 ) or the like, and the silicon wafer 1 is taken out from the growth chamber 3. .

【０００７】この場合、シリコンウエハ１表面の自然酸
化膜は、形成したシリコン単結晶層の品質劣化の原因の
一つであるが、シリコン単結晶層形成直前に水素ガス雰
囲気で高温に加熱することにより除去できることが知ら
れている。In this case, the natural oxide film on the surface of the silicon wafer 1 is one of the causes of quality deterioration of the formed silicon single crystal layer. However, heating to a high temperature in a hydrogen gas atmosphere immediately before forming the silicon single crystal layer. It is known that it can be removed by.

【０００８】一方、図３は超高真空対応の成長室内を有
する減圧ＣＶＤ装置の説明図である。この装置の特徴
は、ロータリポンプ１２とターボ分子ポンプ１１で減圧
可能な、成長室３（到達真空度１０-8Torr以下）がある
ことである。この装置を用いて、低温でシリコン単結晶
層を形成するには、成長室３にいれるシリコンウエハ
に、事前にフッ酸洗浄等を行い、基板表面の自然酸化膜
を除去したシリコンウエハ１を用い、さらに、原料ガス
や水素ガスに水分や酸素が非常に少ない超高純度ガスを
用い、成長室３内部での酸化を抑制することで、低温で
良質なシリコン単結晶層を形成しようとする方法であ
る。この方法は、成長室３内部でのシリコンウエハ１表
面の酸化をさらに抑制するため、成長雰囲気の水分分圧
を減少させている。これは水素流量を少なくして成長圧
力を下げることで実施されている。しかし、成長圧力が
下がると形成した単結晶層の表面が荒れてしまう。この
原因はまだわかっていない。このため、単結晶層表面が
荒れない成長圧力にするため、現状の水素流量は毎分２
０リットル程度である。なお、この技術の詳細は、「ア
プライドフィジックスレター」第５４巻、第２６８９項
(１９８９年)(Appli. Phys.Lett. ５４（１９８９）２
６８９）などに記載されている。On the other hand, FIG. 3 is an explanatory view of a low pressure CVD apparatus having a growth chamber compatible with ultra-high vacuum. The feature of this apparatus is that there is a growth chamber 3 (achievable vacuum degree of 10 −8 Torr or less) that can be depressurized by the rotary pump 12 and the turbo molecular pump 11. In order to form a silicon single crystal layer at a low temperature by using this apparatus, the silicon wafer in the growth chamber 3 is washed with hydrofluoric acid in advance and the silicon wafer 1 from which the natural oxide film on the substrate surface is removed is used. Further, a method for forming a high-quality silicon single crystal layer at a low temperature by using an ultra-high purity gas containing very little water and oxygen as a source gas and a hydrogen gas and suppressing the oxidation inside the growth chamber 3. Is. This method further suppresses the oxidation of the surface of the silicon wafer 1 inside the growth chamber 3, so that the partial pressure of water in the growth atmosphere is reduced. This is done by reducing the hydrogen flow rate and lowering the growth pressure. However, when the growth pressure decreases, the surface of the formed single crystal layer becomes rough. The cause of this is unknown. Therefore, the current hydrogen flow rate is 2 per minute in order to keep the growth pressure at which the surface of the single crystal layer is not roughened.
It is about 0 liter. For details of this technology, see "Applied Physics Letter," Vol. 54, Item 2689.
(1989) (Appli. Phys. Lett. 54 (1989) 2
689) and the like.

【０００９】別に、キャリアガスとして、水素ガス以外
のガス（例えばＨｅガス）も検討されている。しかし、
水素ガスをキャリアガスとして用いた時ほど良質な単結
晶層が得られていない。水素ガスをキャリアガスとして
用いた場合は、水素ガスや原料ガス中の水分などのため
成長室３の内部での酸化はおこる。しかし、水素ガスの
還元反応によって成長室３の内部で形成された酸化物は
除去されてしまうため、良質な単結晶層が形成できると
考えられている。これに対して、水素ガス以外のガスで
は、原料ガスやキャリアガス中の水分や酸素等の不純物
のため、成長室３の内部でシリコンウエハ１の表面が酸
化する。しかも水素ガスの還元反応がないため、形成さ
れた酸化物が除去されずにそのまま残る。このため良質
な単結晶層が形成されないと考えられている。Separately, a gas other than hydrogen gas (eg, He gas) is also being considered as a carrier gas. But,
A single crystal layer of good quality is not obtained as much as when hydrogen gas is used as a carrier gas. When hydrogen gas is used as the carrier gas, oxidation occurs inside the growth chamber 3 due to the moisture content of the hydrogen gas and the raw material gas. However, it is considered that a high-quality single crystal layer can be formed because the oxide formed inside the growth chamber 3 is removed by the reduction reaction of hydrogen gas. On the other hand, with gases other than hydrogen gas, the surface of the silicon wafer 1 is oxidized inside the growth chamber 3 due to impurities such as water and oxygen in the source gas and carrier gas. Moreover, since there is no reduction reaction of hydrogen gas, the formed oxide remains without being removed. Therefore, it is considered that a good quality single crystal layer is not formed.

【００１０】[0010]

【発明が解決しようとする課題】従来のＣＶＤ法による
半導体単結晶層の形成方法では、一分間に２０〜１００
リットルの水素ガスを流す必要があるため、大量の希釈
用窒素ガスが必要となる。このため、ユーテリティの限
られているクリーンルーム内にはこのような装置を置く
ことができない。装置がクリーンルーム内に設置できな
いため、半導体素子の製造過程の途中で、半導体基板を
クリーンルームから出して、半導体単結晶層を形成しな
ければならない。このため、大気中の微粒子がウエハ表
面に残留し、半導体素子の歩留りを低下させている。According to the conventional method for forming a semiconductor single crystal layer by the CVD method, 20 to 100 per minute is obtained.
Since it is necessary to flow liters of hydrogen gas, a large amount of diluting nitrogen gas is required. Therefore, such a device cannot be installed in a clean room where the utility is limited. Since the apparatus cannot be installed in a clean room, the semiconductor substrate has to be taken out of the clean room to form a semiconductor single crystal layer during the manufacturing process of the semiconductor device. Therefore, fine particles in the atmosphere remain on the surface of the wafer, which lowers the yield of semiconductor elements.

【００１１】また、水素ガスを減らす手段として、ヘリ
ウムガス等をキャリアガスとして用いることも検討され
ている。しかし、この方法で半導体単結晶層を形成する
と、形成された単結晶層の品質が悪くなるという問題が
ある。Further, as a means for reducing the hydrogen gas, the use of helium gas or the like as a carrier gas has been studied. However, when the semiconductor single crystal layer is formed by this method, there is a problem that the quality of the formed single crystal layer deteriorates.

【００１２】さらに、減圧ＣＶＤ装置を用いて水素ガス
流量を減らすと、成長圧力が下がり、形成された単結晶
層表面が荒れるという問題もある。Further, when the hydrogen gas flow rate is reduced by using the low pressure CVD apparatus, there is a problem that the growth pressure is lowered and the surface of the formed single crystal layer is roughened.

【００１３】本発明の目的は、半導体単結晶層形成時に
必要な水素ガスの流量を少なくし、クリーンルーム内で
使用可能でかつ、形成した膜質の劣化が少ない半導体単
結晶層の形成方法を提供することにある。An object of the present invention is to provide a method for forming a semiconductor single crystal layer which reduces the flow rate of hydrogen gas required when forming a semiconductor single crystal layer, can be used in a clean room, and has little deterioration in the quality of the formed film. Especially.

【００１４】[0014]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、半導体基板上に半導体単結晶層を形成す
るＣＶＤ法において、原料ガスのキャリアガスとして、
水素ガスと不純物濃度が０.１ppm以下のヘリウム，ネオ
ン，アルゴン，クリプトン，キセノン等の不活性ガスの
混合ガスを用いることを特徴とする。In order to achieve the above object, the present invention provides a CVD method for forming a semiconductor single crystal layer on a semiconductor substrate, using a carrier gas as a source gas,
It is characterized by using a mixed gas of hydrogen gas and an inert gas such as helium, neon, argon, krypton, or xenon having an impurity concentration of 0.1 ppm or less.

【００１５】また、本発明は、半導体基板上に半導体単
結晶層を形成するＣＶＤ法において、原料ガスのキャリ
アガスとして、水素ガスと不純物濃度が０.１ppm以下の
窒素ガスの混合ガスを用いることを特徴とする。Further, according to the present invention, in the CVD method for forming a semiconductor single crystal layer on a semiconductor substrate, a mixed gas of hydrogen gas and nitrogen gas having an impurity concentration of 0.1 ppm or less is used as a carrier gas of a source gas. Is characterized by.

【００１６】[0016]

【作用】本発明は、原料ガスのキャリアガスとして、水
素ガスと超高純度の不活性ガスや窒素ガスの混合ガスを
用いることにより、水素ガスの還元反応による基板表面
に対するクリーニング効果は、水素ガスの流量を減らし
ても維持され、良質の半導体単結晶層が得ることが可能
となり、かつ、水素流量を減少させることができるた
め、装置をクリーンルーム内に設置，使用することが可
能となる。The present invention uses a mixed gas of hydrogen gas and an ultrahigh-purity inert gas or nitrogen gas as a carrier gas of a raw material gas, so that the reduction effect of the hydrogen gas reduces the cleaning effect on the substrate surface. Is maintained even when the flow rate is reduced, a high-quality semiconductor single crystal layer can be obtained, and the hydrogen flow rate can be reduced, so that the apparatus can be installed and used in a clean room.

【００１７】[0017]

【実施例】以下、本発明の一実施例を説明する。EXAMPLE An example of the present invention will be described below.

【００１８】最初に常圧ＣＶＤ装置を用いて、シリコン
基板にシリコン単結晶層をエピタキシーに形成する場合
の実施例を示す。First, an example in which a silicon single crystal layer is epitaxially formed on a silicon substrate using an atmospheric pressure CVD apparatus will be described.

【００１９】実験は図２に示すような常圧ＣＶＤ装置を
用いた。手順は、以下の通りである。In the experiment, an atmospheric pressure CVD apparatus as shown in FIG. 2 was used. The procedure is as follows.

【００２０】(1）シリコンウエハをＲＣＡ洗浄等の半導
体基板の一般的な洗浄方法を用いて洗浄する。(1) A silicon wafer is cleaned using a general cleaning method for semiconductor substrates such as RCA cleaning.

【００２１】(2）洗浄したシリコンウエハを常圧ＣＶＤ
装置を構成する成長炉内にいれる。(2) Atmospheric pressure CVD of the cleaned silicon wafer
It is placed in the growth furnace that constitutes the device.

【００２２】(3）水素ガスを流しながらシリコンウエハ
を１０００〜１１００℃程度迄加熱し、１０分程度維持
する。(3) While flowing hydrogen gas, the silicon wafer is heated to about 1000 to 1100 ° C. and maintained for about 10 minutes.

【００２３】(4）ジクロルシラン，モノシラン等の原料
ガスを水素ガスに混ぜて送り込む。(4) A raw material gas such as dichlorosilane or monosilane is mixed with hydrogen gas and fed.

【００２４】(5）シリコン単結晶層の膜厚が１μｍにな
るまで維持する。(5) The thickness of the silicon single crystal layer is maintained until it becomes 1 μm.

【００２５】(6）原料ガスを止め、成長炉内を水素ガス
で置換する。(6) The source gas is stopped and the inside of the growth furnace is replaced with hydrogen gas.

【００２６】(7）シリコンウエハを室温まで徐冷する。(7) The silicon wafer is gradually cooled to room temperature.

【００２７】(8）成長炉内を窒素ガスに置換した後、シ
リコンウエハを取り出す。(8) After replacing the inside of the growth furnace with nitrogen gas, the silicon wafer is taken out.

【００２８】このようにして作成したシリコン単結晶層
の品質は積層欠陥密度で評価した。最初に、水素ガス中
の水分と単結晶層の品質との関係を調べた。実験は水分
濃度が０.０１ppmの水素ガスに約１％水分を含んでいる
水素ガスを混合して行った。水分濃度は露点計を用いて
水素ガスの露点を測定し、その温度から求めた。図４は
水素ガス中の水分濃度と積層欠陥密度の関係を示してい
る。これより、積層欠陥が０.１個／cm2以下の品質にす
るには水分濃度を０.１ppm以下にする必要があることが
わかった。The quality of the silicon single crystal layer thus produced was evaluated by the stacking fault density. First, the relationship between the water content in hydrogen gas and the quality of the single crystal layer was investigated. The experiment was conducted by mixing hydrogen gas having a water concentration of 0.01 ppm with hydrogen gas containing about 1% water. The water concentration was determined from the temperature by measuring the dew point of hydrogen gas using a dew point meter. FIG. 4 shows the relationship between the moisture concentration in hydrogen gas and the stacking fault density. From this, stacking faults to 0.1 / cm 2 or less quality was found to be necessary to the water concentration to 0.1ppm or less.

【００２９】次に水素ガスとヘリウムガスの混合ガスの
混合比を変えて実験した。なお、この実験ではガス中の
水分濃度が０.１ppm以下のヘリウムガスを用い、混合ガ
ス中の水分濃度が０.１ppmを越えないようにした。図１
に水素ガスとヘリウムガスの混合比と単結晶層の品質と
の関係を示す。水素ガスとヘリウムガスの混合比が１：
１０になっても単結晶層の品質が下がらないことがわか
った。この結果より、キャリアガスとして用いる水素ガ
スを従来の１０％まで減らすことができた。Next, an experiment was conducted by changing the mixing ratio of the mixed gas of hydrogen gas and helium gas. In this experiment, helium gas whose water concentration in the gas was 0.1 ppm or less was used so that the water concentration in the mixed gas did not exceed 0.1 ppm. Figure 1
Shows the relationship between the mixing ratio of hydrogen gas and helium gas and the quality of the single crystal layer. The mixing ratio of hydrogen gas and helium gas is 1:
It was found that the quality of the single crystal layer did not deteriorate even when the value became 10. From this result, the hydrogen gas used as the carrier gas could be reduced to 10% of the conventional value.

【００３０】同様の実験をヘリウムガス以外にネオンガ
ス，アルゴンガス，クリプトンガス，キセノンガスで実
施したが、前述した結果と同じ効果が得られた。The same experiment was conducted with neon gas, argon gas, krypton gas, and xenon gas in addition to helium gas, but the same effect as the above-mentioned result was obtained.

【００３１】また、洗浄の最後には５％フッ酸洗浄をし
て、シリコン基板上の酸化膜を除去してから、成長炉内
に基板をいれることで、成長温度が１０００℃から８０
０℃の間であれば、前述のガス以外に、窒素ガスでも同
様の効果が得られることを確認した。At the end of the cleaning, a 5% hydrofluoric acid cleaning is carried out to remove the oxide film on the silicon substrate, and then the substrate is put in the growth furnace to increase the growth temperature from 1000 ° C. to 80 ° C.
It was confirmed that a similar effect can be obtained with nitrogen gas other than the above-mentioned gases as long as the temperature is between 0 ° C.

【００３２】次に、減圧ＣＶＤ装置を用いてシリコンウ
エハにシリコン単結晶層をエピタキシーに形成する場合
についての実施例を示す。実験には図３に示すような減
圧ＣＶＤ装置を用いた。手順は、以下の通りである。Next, an example of a case in which a silicon single crystal layer is epitaxially formed on a silicon wafer using a low pressure CVD apparatus will be described. A low pressure CVD apparatus as shown in FIG. 3 was used for the experiment. The procedure is as follows.

【００３３】(1）シリコンウエハをＲＣＡ洗浄等の半導
体シリコンウエハの一般的な洗浄方法を用いて洗浄す
る。(1) The silicon wafer is cleaned by a general cleaning method for semiconductor silicon wafers such as RCA cleaning.

【００３４】(2）５％フッ酸洗浄を実施し、シリコンウ
エハ表面の酸化膜を除去する。(2) 5% hydrofluoric acid cleaning is performed to remove the oxide film on the surface of the silicon wafer.

【００３５】(3）洗浄したシリコンウエハを減圧ＣＶＤ
装置を構成する成長炉内にいれる。(3) Low pressure CVD of the cleaned silicon wafer
It is placed in the growth furnace that constitutes the device.

【００３６】(4）水素ガスを流しながら、真空排気を行
い、所定の成長圧力まで減圧する。(4) Evacuation is performed while flowing hydrogen gas, and the pressure is reduced to a predetermined growth pressure.

【００３７】(5）基板を成長温度迄加熱し、１０分程度
維持する。(5) The substrate is heated to the growth temperature and maintained for about 10 minutes.

【００３８】(6）ジクロルシラン，モノシランなどの原
料ガスを水素ガスに混ぜて送り込む。 (7）シリコン単結晶層の膜厚が０.５μｍ になるまで維
持する。(6) A raw material gas such as dichlorosilane or monosilane is mixed with hydrogen gas and fed. (7) The thickness of the silicon single crystal layer is maintained until it becomes 0.5 μm.

【００３９】(8）原料ガスを止めて、成長炉内を水素ガ
スで置換する。(8) The raw material gas is stopped and the inside of the growth furnace is replaced with hydrogen gas.

【００４０】(9）シリコンウエハを室温まで徐冷する。(9) The silicon wafer is gradually cooled to room temperature.

【００４１】(10)成長炉内を窒素ガスに置換しながら、
常圧にもどした後、シリコンウエハを取り出す。(10) While replacing the inside of the growth furnace with nitrogen gas,
After returning to normal pressure, the silicon wafer is taken out.

【００４２】水素ガスとヘリウムガスの混合ガスの混合
比を変えて実験した。なお、この実験でも、ガス中の水
分濃度が０.１ppm以下のヘリウムガスを用い、混合ガス
中の水分濃度が０.１ppmを越えないようにした。図５に
水素ガスとヘリウムガスの混合比と単結晶層の品質との
関係を示す。水素ガスとヘリウムガスの混合比が１：１
０になっても単結晶層の品質が下がらないことがわかっ
た。この結果より、キャリアガスとして用いる水素ガス
を従来の１０％まで減らすことができた。また、本方法
は水素ガス流量が減少しても、トータルのガス流量は変
化しないため、成長圧力が下がらない。これにより従来
の減圧ＣＶＤを用いた半導体単結晶層形成における、水
素ガス流量を減らすことによる単結晶層の表面が荒れる
現象も解消された。Experiments were conducted by changing the mixing ratio of the mixed gas of hydrogen gas and helium gas. Also in this experiment, the helium gas having a water concentration of 0.1 ppm or less was used so that the water concentration of the mixed gas did not exceed 0.1 ppm. FIG. 5 shows the relationship between the mixing ratio of hydrogen gas and helium gas and the quality of the single crystal layer. Mixing ratio of hydrogen gas and helium gas is 1: 1
It was found that the quality of the single crystal layer did not deteriorate even when it reached 0. From this result, the hydrogen gas used as the carrier gas could be reduced to 10% of the conventional value. Further, in this method, even if the hydrogen gas flow rate is decreased, the total gas flow rate does not change, so the growth pressure does not decrease. As a result, in the conventional semiconductor single crystal layer formation using the low pressure CVD, the phenomenon that the surface of the single crystal layer is roughened by reducing the hydrogen gas flow rate is also eliminated.

【００４３】同様の実験をヘリウムガス以外にネオンガ
ス，アルゴンガス，クリプトンガス，キセノンガス、そ
して窒素ガスで実施した。その結果は、前述した結果と
同じ効果が得られた。また、元素番号が大きなガスを用
いると、ヘリウムガスに比べて水素ガスの濃度が小さく
ても高い品質を維持された。これは、元素番号が大きい
と、ガスの排気速度が大きくなるため、大量の不活性ガ
スを流しても、素早く排気され、成長室内の水素ガス分
圧が大きくなっているためと考えられる。The same experiment was conducted with neon gas, argon gas, krypton gas, xenon gas, and nitrogen gas in addition to helium gas. As a result, the same effect as that described above was obtained. In addition, when a gas having a large element number was used, high quality was maintained even when the concentration of hydrogen gas was lower than that of helium gas. It is considered that this is because, when the element number is large, the gas exhaust rate is high, so that even if a large amount of inert gas is flown, it is quickly exhausted and the hydrogen gas partial pressure in the growth chamber becomes large.

【００４４】さらに、本手法は、シリコンウエハ上に他
の半導体単結晶層を（例えば、GaAs等）を形成する場合
にも、前述と同様の効果が得られた。Further, the present method can obtain the same effect as described above even when another semiconductor single crystal layer (for example, GaAs) is formed on a silicon wafer.

【００４５】また、法手法をシリコン単結晶以外の半導
体単結晶基板に適用しても、前述と同様の効果が得られ
た。Even when the method is applied to a semiconductor single crystal substrate other than a silicon single crystal, the same effect as described above can be obtained.

【００４６】[0046]

【発明の効果】本発明によれば、原料ガスのキャリアガ
スとして、水素ガスと超高純度の不活性ガスや窒素ガス
の混合ガスを用いることにより、水素ガスによる還元反
応によってシリコンウエハ表面のクリーニング効果を維
持しながら、水素ガスの流量を減らすことが可能とな
る。その結果、クリーンルーム内に設置，使用すること
ができるＣＶＤ装置で、良質の半導体単結晶層を得るこ
とが現実可能となる。According to the present invention, by using a mixed gas of hydrogen gas and an ultrahigh-purity inert gas or nitrogen gas as a carrier gas of a raw material gas, a reduction reaction with hydrogen gas cleans the surface of a silicon wafer. It is possible to reduce the flow rate of hydrogen gas while maintaining the effect. As a result, it is practically possible to obtain a good-quality semiconductor single crystal layer with a CVD apparatus that can be installed and used in a clean room.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例による水素ガスとヘリウムガ
スの混合比と半導体単結晶層の品質との関係図。FIG. 1 is a diagram showing the relationship between the mixing ratio of hydrogen gas and helium gas and the quality of a semiconductor single crystal layer according to an embodiment of the present invention.

【図２】常圧ＣＶＤ装置の説明図。FIG. 2 is an explanatory diagram of an atmospheric pressure CVD apparatus.

【図３】減圧ＣＶＤ装置の説明図。FIG. 3 is an explanatory diagram of a low pressure CVD apparatus.

【図４】水素ガス中の水分濃度と半導体単結晶層の品質
との関係図。FIG. 4 is a relationship diagram between the water concentration in hydrogen gas and the quality of a semiconductor single crystal layer.

【図５】本発明の他の実施例による水素ガスとヘリウム
ガスの混合比と半導体単結晶層の品質との関係図。FIG. 5 is a diagram showing the relationship between the mixing ratio of hydrogen gas and helium gas and the quality of a semiconductor single crystal layer according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１…シリコンウエハ、２…サセプタ、３…成長室、４…
石英ノズル、５…回転軸、６…マスフローコントロー
ラ、７…鏡、８…放射温度計、９…赤外ランプ、１０…
高周波コイル。1 ... Silicon wafer, 2 ... Susceptor, 3 ... Growth chamber, 4 ...
Quartz nozzle, 5 ... Rotation axis, 6 ... Mass flow controller, 7 ... Mirror, 8 ... Radiation thermometer, 9 ... Infrared lamp, 10 ...
High frequency coil.

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】半導体基板上に半導体単結晶層を形成する
方法の一つである化学反応気相成長法において、原料ガ
スのキャリアガスとして水素ガスと不活性ガスの混合ガ
スを用いることを特徴とする半導体単結晶層の形成方
法。1. A chemical reaction vapor deposition method, which is one of the methods for forming a semiconductor single crystal layer on a semiconductor substrate, wherein a mixed gas of hydrogen gas and an inert gas is used as a carrier gas of a source gas. And method for forming a semiconductor single crystal layer. 【請求項２】請求項１において、前記不活性ガスはヘリ
ウム，ネオン，アルゴン，クリプトン，キセノンである
半導体単結晶層の形成方法。2. The method for forming a semiconductor single crystal layer according to claim 1, wherein the inert gas is helium, neon, argon, krypton, or xenon. 【請求項３】請求項１において、前記不活性ガスは不純
物濃度が０.１ppm以下である半導体単結晶層の形成方
法。3. The method for forming a semiconductor single crystal layer according to claim 1, wherein the inert gas has an impurity concentration of 0.1 ppm or less. 【請求項４】半導体基板上に半導体単結晶層を形成する
方法の一つである化学反応気相成長法において、原料ガ
スのキャリアガスとして水素ガスと窒素ガスの混合ガス
を用いることを特徴とする半導体単結晶層の形成方法。4. A chemical reaction vapor deposition method, which is one of the methods for forming a semiconductor single crystal layer on a semiconductor substrate, wherein a mixed gas of hydrogen gas and nitrogen gas is used as a carrier gas of a source gas. Method for forming semiconductor single crystal layer. 【請求項５】請求項４において、前記窒素ガスは不純物
濃度が０.１ppm以下である半導体単結晶層の形成方法。5. The method for forming a semiconductor single crystal layer according to claim 4, wherein the nitrogen gas has an impurity concentration of 0.1 ppm or less.
JP9609794A 1994-05-10 1994-05-10 Method of forming semiconductor single crystal layer Pending JPH07302762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9609794A JPH07302762A (en) 1994-05-10 1994-05-10 Method of forming semiconductor single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9609794A JPH07302762A (en) 1994-05-10 1994-05-10 Method of forming semiconductor single crystal layer

Publications (1)

Publication Number Publication Date
JPH07302762A true JPH07302762A (en) 1995-11-14

Family

ID=14155896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9609794A Pending JPH07302762A (en) 1994-05-10 1994-05-10 Method of forming semiconductor single crystal layer

Country Status (1)

Country Link
JP (1) JPH07302762A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068420A (en) * 1999-08-30 2001-03-16 Komatsu Electronic Metals Co Ltd Manufacture of epitaxial silicon wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068420A (en) * 1999-08-30 2001-03-16 Komatsu Electronic Metals Co Ltd Manufacture of epitaxial silicon wafer

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