JPH07297362A - Semiconductor module for electric power - Google Patents

Abstract

PURPOSE: To improve electrical characteristics by equalizing the position of connection conductor for all pairs or each two pairs of semiconductor device, and connecting corresponding connection conductors electrically on the upper side of conductor path. CONSTITUTION: Conductor paths 3, 4 are connected with strip-form connection conductors 8, 9 standing thereon while being arranged in parallel with each other. The connection conductors of a semiconductor device are located equally to each pair of semiconductor devices in the direction of the axis of symmetry 12. More specifically, perfectly identical units, each comprising connection conductors and semiconductor devices corresponding in number to the conduction capacity, are arranged on the bottom 1. Each pair of semiconductor devices 10, 11 are connected in parallel through the connection conductors 8, 9. Each pair of connection conductors 8, 9 are connected each other through a stripe or plane coupling conductor on the upper side of the conductor paths 3, 4. All connection conductors 8 are collected electrically through first coupling conductors and all coupling conductors 9 are collected electrically through second connection conductors.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plurality of semiconductor devices which are arranged on a conductor path and are connected in parallel, facing each other as a pair along an axis parallel to the bottom of a module, and connected to the conductor path. A power semiconductor module having closely adjacent strip-shaped parallel connection conductors.

[0002]

BACKGROUND OF THE INVENTION One such power semiconductor module has already been described, for example, in EP 0427143 and German utility model G9203000. Parallel strip-shaped connecting conductors located next to each other reduce the inductance of the module. The module described in the European patent shows a symmetrical construction with four semiconductor devices.

For large currents of, for example, 1000 A or more, a plurality of semiconductor devices, for example 6 or more, must be connected in parallel with each other. In known modules, when six or more semiconductor devices are connected in parallel with one another, the paths from the semiconductor devices to the connecting conductors have different lengths. This asymmetry within the module limits the available current and voltage range of individual semiconductor devices. This is because the characteristics of the entire module are determined by the semiconductor device having the maximum parasitic inductance.

[0004]

The object of the invention is to improve the electrical properties of a power semiconductor module of the type mentioned at the outset.

[0005]

In order to solve the above-mentioned problems, according to the present invention, at least one pair of semiconductor devices and two at most two semiconductor devices located one behind the other in the axial direction are provided.
One pair being connected to at least two of the closely adjacent connecting conductors, the position of the connecting conductor with respect to the semiconductor device being equal for all pairs of semiconductor devices or for each two pairs of semiconductor devices, Corresponding connecting conductors are also electrically connected to one another above the conductor track.

Other structures of the present invention are set forth in the second and subsequent claims.

[0007]

EXAMPLES The present invention will be described in more detail with reference to the examples shown in FIGS.

The power semiconductor module according to FIG. 1 has a bottom 1 made of metal, on which an insulating layer 2 is arranged. The insulating layer 2 has conductor tracks 3, 4 and 5. On the conductor path, the semiconductor device 10 is mirror-symmetrical with respect to the symmetry axis 12.
And 11 are attached. These semiconductor devices include, for example, a field-effect controlled semiconductor device 6 and a diode 7 connected in antiparallel. The field effect controlled semiconductor device may be, for example, a MOSFET or an IGBT (insulated gate bipolar transistor). One side of the semiconductor device is in direct contact with the conductor track 3 and the other side is in contact with the conductor track 4 via bond wires. The conductor track 5 serves for contact with the control terminal.

The conductor tracks 3, 4 are connected to a connecting conductor 8 or 9 which stands vertically above the conductor track. These connecting conductors are strip-shaped, are arranged parallel to each other, and are arranged closely aligned.

A plurality of semiconductor devices equal to the semiconductor devices 10 and 11 are provided on the same bottom 1 according to the desired energizing ability of the module. In this case, each pair of semiconductor devices, which are mirror-symmetrically opposed to each other, has two connecting conductors 8, 9. The position of the connecting conductors with respect to the semiconductor device is equal for each pair of semiconductor devices in the direction of the axis of symmetry 12. In other words, on the bottom part 1, a completely equal number of units of connecting conductors and semiconductor devices are arranged corresponding to the current carrying capacity. Each pair of semiconductor devices 1
0 and 11 are connected in parallel by connecting conductors 8 and 9. The connecting conductors 8, 9 of each pair are connected to one another by means of a band-shaped or plate-shaped connecting conductor on the upper side of the conductor track. All connecting conductors 8 are electrically bundled together by the first coupling conductors, and all coupling conductors 9 are electrically bundled together by the second coupling conductors.

An electrical equivalent circuit of the arrangement according to FIG. 1 is shown in FIG. Each of the semiconductor devices comprises an IGBT and a freewheeling diode 7 connected in parallel with it.

The embodiment according to FIG. 2 is also constructed on a bottom 1 made of metal. Here, semiconductor devices 27, 28 each having four conductor paths 15, 16, 17, 18 are located facing each other in mirror symmetry with respect to the axis of symmetry 12. A freewheeling diode 21 is arranged on the conductor track 15, and a semiconductor device 20 controlled by field effect and a protection diode 22 connected in antiparallel are arranged on the conductor track 17. The electrical equivalent circuit of the arrangement according to FIG. 2 is shown in FIG. It is terminal +, alternating current,
Is a bridge branch having-
It is composed of a series circuit with the BT 20, and a protection diode 22 is connected to the IGBT 20 in antiparallel. The + terminal corresponds to the conductor path 15, the AC terminal corresponds to the conductor path 16, and the-terminal corresponds to the conductor path 17. The conductor path 18 is an IGBT 20.
It is connected to the gate terminal of.

The conductor tracks 15, 16 and 17 are respectively three connecting conductors 24, 25 and 2 which are arranged perpendicular to the plane of the conductor track, parallel to each other and closely aligned.
It is connected with 6. These connecting conductors connect in parallel one pair of semiconductor devices 27 and 28, respectively, which are mirror-symmetrically opposed to each other.

Another pair of semiconductor devices, which are mirror-symmetrically opposed to each other, are arranged on the bottom portion 1 in accordance with the energizing ability of the module. These other pairs of semiconductor devices are identical to the first pair, as in the embodiment according to FIG. They have three connecting conductors 24, 25, 26 respectively.
To contact. The connecting conductors of each pair of semiconductor devices are again connected to each other on the plane of the conductor track by one connecting conductor. In this case, three coupling conductors are required.

Due to the symmetrical construction of the module according to FIGS. 1 and 2, the semiconductor devices 6, 7, 20, 21, 22 are provided.
To the associated connecting conductor is always equal. This symmetry leads to equal parasitic inductances for each device and thus also improved electrical properties.

In FIG. 5, the semiconductor devices 10 and 11 are positioned so as to face each other in mirror symmetry with respect to the axis of symmetry 12 again.
A power semiconductor module consisting of a pair of is shown.
The same conductor path 3 is mirror-symmetrical to the semiconductor devices 10 and 11.
Another semiconductor device 10 ′, 11 ′ is arranged on top of it, the second axis of symmetry 29 being located in the plane of the conductor track and at a right angle to the first axis of symmetry 12. Pair 10, 1
1 and 10 ', 11' are contacted by a single pair of connecting conductors 8, 9. A plurality of such double pair or quadruple arrangements are then arranged on the bottom 1 depending on the desired current carrying capacity. Each double pair or quad arrangement is contacted by connecting conductor pairs 8,9. The individual connecting conductor pairs 8, 9 of each quadruple group are then again brought into contact by a connecting conductor on the upper side of the conductor track. The conductor tracks required for the control terminals are omitted here for the sake of clarity. An arrangement corresponding to the module according to FIG. 2 is recommended.

The duplicated mirror-symmetrical configuration according to FIG. 5 can also be applied to the device according to FIG. In that case, the paths from each of the semiconductor devices 6 or 20, 21 to the associated connecting conductors are also equal. Thereby, the parasitic inductance is also equal and a good availability of the power semiconductor module is guaranteed.

According to the invention, each of the conductor tracks connected to the control terminal is connected to a connecting conductor and these connecting conductors are connected to one another above the conductor track corresponding to the connecting conductors for the load current. It is further improved by doing so.

FIG. 6 shows a pair of connecting conductors 8 attached to each other.
It is shown how 9 are connected to each other. This connection is made by means of coupling conductors 30, 31 which respectively connect the connection conductors 9 or 8 to one another. Connection conductors 8 and 9
The different heights of are chosen merely to make the drawing easier to see, and in practice it is intended that all connecting conductors have the same height. The coupling conductors 30, 31 may be located inside the case. However, it is purposeful that they are located on the case. This is because a plurality of power semiconductor modules can be connected in parallel with each other in this way.

According to the embodiment according to FIGS. 1, 2 and 5, sufficient symmetry of the current carrying part is obtained. If the symmetry requirements are not very high, on either side of the axes 12, 29,
It is sufficient to arrange semiconductor devices that are identical or different in structure. The axis of symmetry 12 then becomes the axis of the module, here the longitudinal axis parallel to the bottom 1 and running straight through the plane of the connecting conductor. Axis 2 in the embodiment of FIG.
9 is the axis lying parallel to the plane of the connecting conductor and the bottom 1.

[Brief description of drawings]

FIG. 1 is a plan view of a first embodiment.

FIG. 2 is a plan view of the second embodiment.

FIG. 3 is an equivalent circuit of FIG.

FIG. 4 is an equivalent circuit of FIG.

FIG. 5 is a plan view of the third embodiment.

FIG. 6 is a side view of the arrangement according to FIG.

[Explanation of symbols]

 1 Metal Bottom 2 Insulating Layer 3-5 Conductor Path 6 Semiconductor Device 7 Diode 8, 9 Connection Conductor 10, 11 Semiconductor Device 12 Symmetry Axis 15-18 Conductor Path 20 Semiconductor Device 21 Free Wheeling Diode 22 Protective Diode 24- 26 connection conductor 27, 28 semiconductor device

 ─────────────────────────────────────────────────── ─── Continuation of the front page (71) Applicant 390041531 Eupec, Europaitsie, Gezershyaft, Fuyuah, Rice Tungsharpruiter, Mitt, Besilyenktel, Haftung, und, Companie, Elefels Echels Echels Echels Echels Echeles Echels Eucels Eur Essels Euceles Essels BESCHRANKTER HA FTUNG + COMPANY / COMM KOM MADIT GESELLSCHAFT Germany Federal Republic of Warszytine Belekke (No address) (71) Applicant 390039413 Siemens Aktingezel Syaft SIEMENS AKTIENGES L LSCHAFT Federal Republic of Germany Berlin and Miyunchen (no street number) (72) Inventor Gerhard Schiurtze, Federal Republic of Germany 59557 Ripschutt Amsijne Batcha 21 (72) Inventor Karl-Heinz Sommer, Federal Republic of Germany 59581 Warschyutain 2 Goethesutler Se 12 (72) Inventor Reinhold Scheupanke Germany 59909 Bestweit He 6 Ha-Rhyupke-Schyutrase 52 (72) Inventor Georgi Patp Germany 91058 Erlangen Bunsen Schutlerse 16 1/3 (72) Inventor Walter Scheu Pringmann Germany 91325 Adelsdorf Oberer Bacz Haggatse 10 Be (72) Inventor Peter Zwungerger Germany 90453 Nyurnberg 60 Renbahn Schutlerse 45

Claims (7)

[Claims] 1. A plurality of semiconductor devices, which are arranged in parallel on a conductor track and face each other as a pair along an axis parallel to the bottom of a module, and closely adjacent parallel devices connected to the conductor track. In a power semiconductor module having a strip-shaped connecting conductor, semiconductor devices (10, 11; 2) located one behind the other in the direction of the axis (12).
7, 28) and at most two pairs each of which are closely adjacent to each other (8, 9; 24, 25, 2).
6) connected to at least two and the position of the connecting conductor with respect to the semiconductor device is equal for all pairs of semiconductor devices or for each two pairs of semiconductor devices,
A power semiconductor module, characterized in that the corresponding connecting conductors are electrically connected to one another above the conductor track. 2. Two pairs (10, 11; 10 ', 11') connected in parallel, one behind the other in the direction of the axis.
2. The power semiconductor module according to claim 1, characterized in that the connecting conductors (8, 9) are arranged between the two pairs. 3. The semiconductor device is a field effect controlled semiconductor device (6, 20), to which one free wheeling diode (7, 22) is connected in anti-parallel. The power semiconductor module according to claim 1 or 2. 4. The semiconductor device comprises a series circuit consisting of a diode (21) and a field effect controlled semiconductor device (20), the node of the series circuit being a conductor track (15).
Via a third strip-shaped connecting conductor (24) closely adjacent to the other two connecting conductors (25, 26), and the third connecting conductor (24) is a conductor path. 3. The power semiconductor module according to claim 1, wherein the power semiconductor modules are connected to each other on the upper side of the. 5. The power semiconductor module according to claim 1, wherein the semiconductor devices facing each other along the axis (12) are mirror-symmetrical with respect to the axis of the module. 6. The pair of semiconductor devices (10, 10 ′, 11, 11 ′) existing on both sides of the connection conductor are mirror-symmetrical with respect to the plane of the connection conductor. The power semiconductor module described. 7. A semiconductor device is surrounded by a case, and a connecting conductor is provided outside the case.
7. The power semiconductor module according to claim 1, wherein the power semiconductor modules are connected to each other by means of 1).