JPH07297248A - Crystal defect measuring device and method of manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To measure a depth position from a crystal surface of defects with high resolution of 1/2 or less of a wave-length of emitted lights without being influenced by vertical variations of the crystal surface in a device for measuring defects in a crystal by light emission. CONSTITUTION:A linearly polarized laser beam 2 is branched by a half mirror 3-1 and one is modulated by constant frequency by a frequency modulator 4 to be a reference beam and the other is stopped by an objective 8-1 and emitted to a crystal sample 15, and a reflected beam from a crystal surface and scattered light from defects are polarized and separated by a Thomson prism 7 and the reference beam is respectively made to interfere with the reflected beam 9 and the scattered light 10, which are detected by detectors 13-1, 13-2 and the difference in phases of both beams is obtained by a lock-in amplifier 14 to measure a depth position from a surface of defects.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer crystal evaluation apparatus, and more particularly to a crystal defect measuring apparatus for measuring crystal defects such as precipitates and stacking faults in a silicon wafer, and a semiconductor device using the same. The present invention relates to a manufacturing method of.

[0002]

2. Description of the Related Art The degree of integration of an LSI (Large Scale Integrated Circuit) is improved and a MOS (Metal Oxid) constituting the LSI is
(e Semiconductor) A decrease in the yield rate of non-defective products and a decrease in reliability due to transistor defects are becoming major problems. Typical causes of defects in MOS transistors are dielectric breakdown of the gate oxide film and excessive leakage current of the junction. The latter is a problem because it causes a phenomenon of information loss called refresh failure, especially in a DRAM (random write / read type memory device). Most of the defects of these MOS transistors are directly or indirectly caused by crystal defects in the silicon substrate. That is, in the LSI manufacturing process, if any crystal defect exists in the surface region of the silicon substrate that is converted into a silicon oxide film by oxidation, a structural defect is formed in the silicon oxide film, causing dielectric breakdown during the LSI operation. Further, if a crystal defect exists in the depletion layer of the junction, a large amount of leak current is generated. It is considered that this leak current is generated by the Zener effect as a result of local concentration of the electric field in the vicinity of the defect. Thus, if a crystal defect is formed in the surface region of the silicon substrate on which an element is formed, it may cause a defect in the MOS transistor. However, on the other hand, crystal defects existing in a region deeper than the surface region, especially oxygen breakouts, clean the element region on the surface by capturing various contaminating metals mixed in the silicon substrate in various manufacturing processes. Has a function to keep it in good condition. This is usually called gettering, and L
This gettering is an important manufacturing technique because further cleanliness is required in the manufacturing process as the integration degree of SI is improved. As described above, the crystal defect in the silicon substrate is often determined as good or bad depending on the existence position, particularly the depth position in the substrate. Therefore, controlling crystal defects in the depth direction is important for LSI manufacturing,
For that purpose, it is an important technique to measure the crystal defects in the silicon substrate in the depth direction with high resolution. The following publicly known examples of such defect measurement technology are available.

The first known example is to cleave a silicon substrate,
It is a method of irradiating infrared rays that pass through the Si crystal from the cross-sectional direction (direction parallel to the surface of the sample), and detecting scattered light from minute defects in the Si crystal from the surface direction of the sample. This method is called an infrared scattering tomography method, for example,
Journal of Crystal Growth, Vol. 88 (1988), page 332. In this technique, the position of the defect in the depth direction can be detected by scanning the beam in the depth direction. The depth resolution is determined by the diameter of the irradiation beam and is limited to the irradiation light wavelength (about 1 μm). Further, in this measurement, it is necessary to cut the sample, so that it is impossible to return the sample to the manufacturing process after the measurement and complete it as an LSI. A second known example is confocal differential heterodyne microscopy, which is described in Applied Optics, Vol. 29 (1990), page 4244. This method uses two light beams with different frequencies (each frequency is ν1 and ν2).
Is characterized by intersecting at the position of the defect,
Interference fringes whose intensity varies at the beat frequency of ν1-ν2 are formed in the intersecting region. The scattered light intensity from the defect is ν1
Since the frequency fluctuates at −ν2, it is possible to remove the influence of the scattered light other than the crossing region by detecting only this frequency fluctuation component. Further, by making the detection optical system a confocal optical system via a pinhole, the scattered light detection region can be set at one point of the intersection region.
However, since the direction of the interference fringes in this case is perpendicular to the surface, the depth resolution is limited to about the wavelength.

[0004]

However, in any of such crystal defect measuring devices, the depth resolution of defect detection is insufficient, and in particular, the manufacture of miniaturized semiconductor elements as recently performed. In Japan, it is becoming difficult to meet the demand. For example, in the above transistor junction, a depletion layer exists under a diffusion layer of about 0.1 μm over a thickness of about 0.5 μm. Therefore, in order to determine whether a crystal defect in the silicon substrate causes a defect, it is necessary to detect the crystal defect with a resolution of at least 0.5 μm, preferably 0.1 μm or less in the depth direction. Is.

By the way, in order to measure a crystal defect in a semiconductor substrate, it is necessary to use light capable of transmitting a crystal as irradiation light. Therefore, when the crystal is silicon, the light having a wavelength of about 1 μm or more is used. You have to use light.
In order to meet the need for a depth resolution of 0.5 μm or less under the condition of a wavelength of 1 μm or more, a method of causing scattered light from a defect to interfere with irradiation light and measuring the phase of the interference fringes can be considered. However, even in this measurement method, when the sample is scanned, the sample surface fluctuates due to the movement of the sample stage, or the in-plane distribution of the sample thickness causes the sample surface to fluctuate up and down. The disadvantage is that the position cannot be measured accurately.

Since the measurement is carried out using a silicon substrate in the process of manufacture, it is economically desirable to continue manufacturing after the measurement without discarding the silicon substrate and complete it as an LSI. For that purpose, it is necessary to measure the silicon substrate nondestructively and without causing contamination.

The present invention has been made in order to solve the above-mentioned problems, and the depth position from the surface of the defect in the crystal is determined by the wavelength of the irradiation light even with respect to the vertical movement of the surface of the semiconductor wafer which is the subject. A crystal defect measuring device capable of performing measurement with a resolution of ½ or less, and capable of performing non-destructive and contamination-free measurement so that the wafer can be returned to the process after the measurement, and a method of manufacturing a semiconductor device using the same. The purpose is to provide.

[0008]

In order to achieve this object, in the present invention, light is radiated to a crystal which is an object, and a reflected light from the crystal surface and a scattered light from a defect in the crystal are used. Are separated and simultaneously detected, the phase difference between the reflected light and the scattered light is obtained, and the distance from the surface of the defect is measured with a resolution of ½ or less of the wavelength of the irradiation light.

The light used here is a light having a wavelength penetrating into the crystal and is linearly polarized light, which is reflected by the crystal surface having the same polarization component as the irradiation light and perpendicular to the irradiation light. The scattered light from the defect having a different polarization component is separated and detected by the polarization component. Alternatively, the crystal is irradiated with circularly polarized light, the reflected light from the crystal surface is converted into linearly polarized light by a quarter-wave plate, and scattered light from a defect having a polarization component perpendicular to this polarization direction is converted into The reflected light and the polarized component are separated and detected. Also, the irradiation light is divided into two, one of which is irradiated to the crystal, and the other is frequency-modulated by a certain frequency to form a reference light. This reference light is further divided into two and reflected light from the crystal surface is divided. And the scattered light from the defect are caused to interfere with each other to form a beat signal,
The distance from the crystal surface to the defect is determined from the phase difference between the beat signals. Here, it is also possible to use a Zeeman laser as the light source of the irradiation light, irradiate the crystal with one of the two laser lights having different frequencies, and use the other as the reference light. Further, by measuring the intensity of scattered light from a defect, the size of the defect can be measured by calculation from the intensity.

On the other hand, in the process of manufacturing a semiconductor device, a part of an element structure such as a junction of the semiconductor device is formed in a part of a scribe region on a wafer, and the crystal defect measuring device is used to form a crystal defect state. To manage semiconductor device manufacturing. In this case, in particular, crystal defects existing in a region within 1 μm from the semiconductor surface are measured with high resolution in distinction from defects having a depth larger than that.

[0011]

FIG. 2 is a view for explaining the operation of the crystal defect measuring device according to the present invention.

First, FIG. 2 (a-1) is an intensity signal Ir of the reflected light from the surface of the crystal sample 15 when the crystal sample 15 in FIG. 1 is scanned with the irradiation light 2, and FIG. −
1) is the phase signal Φr of the reflected light. Where Ir
Can be regarded as constant if the vertical variation Δ of the sample surface is within the depth of focus of the irradiation light. However, Φr is
High sensitivity changes due to the relationship of 2π (2Δ / wavelength).

Next, FIG. 2 (a-2) is an intensity signal Is of scattered light from a defect in a crystal sample accompanying irradiation light scanning, and FIG. 2 (b-2) is a phase of the scattered light. It is the signal Φs. Here, in addition to the information on the depth position of the scatterer from the sample surface, Φs includes a change amount due to the vertical movement of the sample surface.

Next, FIG. 2 (c) shows Φs accompanying irradiation light scanning.
This is the variation of −Φr, and the influence of the vertical variation of the sample surface is eliminated, and only the information on the depth of the defect from the crystal sample surface is obtained. Since the depth resolution in this case is determined by the resolution of the phase signal Φs-Φr, for example, it is significantly superior to the wavelength which is the resolution when the above-mentioned confocal optical system is used, and the wavelength of 1 It is less than or equal to / 2, and 1/10 of the wavelength is not impossible.

In this case, the reflected light from the surface of the crystal sample and the scattered light from the defect can be separated by polarized light and detected simultaneously. In addition, if the reference light that has been frequency-modulated is interfered with both lights and a beat signal is formed in each, the phase difference between the two lights can be detected as the phase difference between the beat signals.
The measurement becomes more accurate and easier.

Thus, by obtaining the phase difference between the reflected light from the crystal surface and the scattered light from the defect, the depth position of the defect from the crystal surface is not affected by the vertical movement of the crystal surface. The measurement can be performed with a high resolution of ½ or less of the wavelength of the irradiation light. Further, in the actual manufacturing of the semiconductor device, a part of the structure of the semiconductor device is formed in the scribe region of the wafer, and the crystal defect measuring device described above is used to measure the defects, thereby manufacturing the semiconductor device. It is possible to control the crystal defects in the above step without destroying the wafer.

[0017]

【Example】

(Embodiment 1) FIG. 1 is a block diagram of an embodiment of a crystal defect measuring device according to the present invention.

First, the linearly polarized YAG laser light (wavelength 1.06 μm) 2 emitted from the light source 1 is split into two by a half mirror 3-1 and one of them is a beam splitting type Thomson prism 7 and a lens 8-. Squeeze through 1 into crystal sample 15. Here, since the reflected light from the crystal sample 15 has only the same polarization component as the incident light, and the scattered light also has the polarization component perpendicular to the incident light, the incident light is reflected by the Thomson prism 7. Light with the same polarization direction as (mainly reflected light)
9 and light (scattered light) having a polarization direction perpendicular to the incident light 10
And separate. The other light branched by the half mirror 3-1 is used as reference light through the modulator 4 (modulation frequency is 40 MHz). The reference light is further branched by the half mirror 3-2 and interferes with the reflected light 9 and the scattered light 10 to form a beat signal. In this case, the polarization direction is 90
In order to interfere with scattered light 10 having different degrees, the polarization direction is adjusted through the ½ wavelength plate 5-1. The respective interference lights are the fluorescence removal filters 11-1 and 11-2 and the lens 8-.
The light is detected by the photodetectors 12-1 and 12-2 through 2, 8-3 and the pinholes 22-1 and 22-2. Each signal passes through the amplifiers 13-1 and 13-2, and the interference beat signal of 40 MHz on the reflected light side is locked in the amplifier 1
The interference beat signal of 40 MHz on the scattered light side is input to the signal input side of the lock-in amplifier 14, which is used as the reference signal of No. 4 above. The control computer 20 has a lock-in amplifier 14
2 of the scattered light signal intensity from the beam and the phase difference with respect to the reference signal
As one set of data, the crystal sample 15 is taken in while moving in the XYZ directions. The sample 15 is moved by the sample table 21.
The piezo element 16 that moves the Z axis direction and the moving table 17 that moves the X axis direction are controlled by the control computer 20 via the respective drivers 18 and 19. Further, as a method of scanning the irradiation light in the depth direction, there is a method of moving the sample stage 21 in the depth direction by the piezo element 16 as well as a method of moving the objective lens 8-1 in the depth direction. Then, the above measurement is similarly performed with light of a plurality of wavelengths, and the depth position of the defect is obtained from the phase signal at each wavelength. By measuring at these multiple wavelengths,
Uncertainty due to the periodicity of 2nπ included in the phase can be removed.

Thus, the depth position of the crystal defect from the crystal surface can be measured with a high resolution of 1/2 or less of the wavelength of the irradiation light without being affected by the vertical movement of the crystal surface. In the present embodiment, a configuration in which a quarter-wave plate is further installed between the Thomson prism 7 and the objective lens 8-1 to irradiate the crystal defects with circularly polarized irradiation light is also conceivable. In this case, the light 10 becomes the reflected light and the light 9 becomes the scattered light.

(Embodiment 2) FIG. 3 is an apparatus configuration diagram of a second embodiment according to the present invention.

First, the Zeeman laser light (wavelength 1.15 μm) 2 from the laser light source 25 which oscillates with two linearly polarized lights orthogonal to each other at two frequencies is split into two by the half mirror 3-1 and the Glan-Thompson prism 24 is provided. The laser light controlled to one linearly polarized light by -1 is squeezed into the sample 15 through the Thomson prism 7 and the lens 8-1. At this time, in order to correct the change of the linearly polarized light by the lens 8-1, the 1/2 wavelength plate 5-2 is provided between the Thomson prism 7 and the lens 8-1, and the lens pair 2 whose magnification does not change.
Insert 3. Since the reflected light from the sample has only the same polarization component as the incident light and the scattered light has the polarization component perpendicular to the incident light, the Thomson prism 7 causes the light having the same polarization direction as the incident light (mainly the reflected light). 9 and the light 10 (scattered light) having a polarization direction perpendicular to the incident light are separated. On the other hand, the other light split by the half mirror 3-1 passes through the Glan-Thompson prism 24-2 and serves as linearly polarized reference light perpendicular to the incident light. The reference light is further branched by the half mirror 3-2 to interfere with the reflected light 9 and the scattered light 10, respectively.
In this case, in order to interfere with the reflected light 9 having a polarization direction different by 90 degrees, the polarization direction is adjusted through the ½ wavelength plate 5-1. Each of the interference lights has a fluorescence removal filter 11-
1, 11-2, lens 8-2, 8-3 and pinhole 22
-1, 22-2 through photodetectors 12-1, 12-2
Detect with. Each signal is the amplifier 13-
1 and 13-2, an interference beat signal equal to the difference between two frequencies on the reflected light 9 side is used as a reference signal for the lock-in amplifier 14, and an interference beat signal equal to the difference between two frequencies on the scattered light 10 side is used as a lock-in amplifier. Put it on the signal input side of 14. As a method of detecting the phase difference, in addition to the method of using one lock-in amplifier 14 as described above, an output from an oscillator that generates a frequency equal to the difference between two frequencies is used as a reference signal of the two lock-in amplifiers. In addition, a method of measuring the intensity and phase of the reflected light 9 and the scattered light 10 separately by using two lock-in amplifiers and importing them into a computer, and calculating the phase difference by calculating the phase difference of each during data processing is also possible. is there. The control computer 20 has a lock-in amplifier 14
A pair of data of the intensity and phase difference of the scattered light signal from is acquired by moving the sample 15 in the XYZ directions. Sample 1
For the movement of 5, the piezo element 16 for moving the sample table 21 in the Z axis direction and the moving table 17 for moving the sample table 21 in the XY axis directions are controlled by the control computer 20 via the respective drivers 18 and 19. As a scanning method in the depth direction of irradiation light,
In addition to the method of moving the sample table 21 in the depth direction by the piezo element 16, there is also a method of moving the objective lens 8-1 in the depth direction.

As described above, in the second embodiment, the Zeeman laser light that oscillates with polarizations orthogonal to each other at two frequencies is used as the light source of the irradiation light. The same measurement as in the first embodiment can be performed without the need for modulation.

(Embodiment 3) Next, an embodiment of a method of manufacturing a semiconductor device using the crystal defect measuring apparatus according to the present invention will be described with reference to FIGS.

First, as shown in FIG.
1 are usually formed in a matrix on a semiconductor substrate. Areas 102 and 103 between these LSI devices 101
Is an area (called a scribe area) that serves as a cutting margin for cutting into individual LSIs after the LSI is completed.
In these scribe areas, various elements for evaluating LSI characteristics and patterns for alignment in lithography are formed. As shown in FIG. 6, a thick silicon oxide film 111 (referred to as a field oxide film) is formed between these elements for electrical insulation. On the other hand, in the DRAM (random writing / reading type memory device) according to the present embodiment, as shown in FIG.
A structure similar to the junction at M is formed. That is, the diffusion layer 106, the depletion layer 105, the storage electrode 107, the capacitor insulating film 108, the plate electrode 109, and the interlayer insulating film 110. Of these, the material of the storage electrode 107 and the plate electrode 109 is polycrystalline silicon. is there. With such a structure, defects of almost the same kind and the same number (density distribution) as the junctions of the DRAM are formed in the semiconductor substrate in the scribe region. Therefore, in order to manage the defects generated in the series of steps of manufacturing the DRAM, the crystal defects existing in the semiconductor substrate in the scribe region are removed from the first embodiment.
The crystal defect measuring device described in Nos. 1 to 2 is used for the appropriate measurement. At that time, at least a region within a depth of 1 μm from the surface of the silicon substrate 104 (the interface where the silicon substrate and the thin film are in contact when a thin film is formed) has a depth resolution of 0.
Measurement is performed at 1 μm, and based on the result, the density of defects existing within the depth of 0.5 μm is calculated. If the density exceeds the control standard, the cause is determined by a more detailed analysis and necessary. Take appropriate measures. As a result, problems can be extracted before the LSI is completed, and the amount of damage due to defects can be greatly reduced. In addition, the possibility of problems such as delayed delivery is reduced. Note that the measurement described in Examples 1 and 2 is nondestructive and does not contaminate the semiconductor substrate. Therefore, after the crystal defect measurement, the substrate can be returned to the manufacturing process again and completed as an LSI. it can.

Further, the manufacturing method according to this embodiment has the following advantages. That is, even after the DRAM is completed, the occurrence status of the refresh failure can be grasped without using a complicated and expensive device such as an LSI tester. In particular, DRA due to some defect in the manufacturing process
Even when M does not operate normally, it is possible to grasp the occurrence status of refresh failure. In the present example, the wiring layer formed in the steps after the plate electrode is removed in the scribe region, but this is because the metal or its compound forming the wiring layer does not transmit infrared light. This is because it becomes an obstacle when observing a defect in the semiconductor substrate using the crystal defect measuring device. On the other hand, in the case of polycrystalline silicon, even if it is doped at a high concentration in order to obtain conductivity as in this embodiment, infrared light is transmitted if the total thickness thereof is about 1 μm or less. Therefore, it is possible to observe defects in the semiconductor substrate.

Even when the bonding structure is formed in a region other than the scribe region, for example, a region in which an external wiring drawing electrode (bonding pad) is formed, infrared rays are formed until the wiring layer is formed. Defects in a semiconductor substrate can be observed with a crystal defect measuring device using light. Similarly, it is possible to observe defects in the semiconductor substrate by using an element formed for evaluating the bonding characteristics.

It is also effective to measure the crystal defects formed in the silicon substrate in the region where no junction is formed, if necessary, without forming the above-mentioned junction structure. In particular, it is effective to control the gettering ability of contamination by measuring oxygen precipitates inside the silicon substrate and reflecting the results on the pulling conditions of the silicon crystal and the heat treatment conditions in the manufacturing process. As a method of reflecting the heat treatment conditions, when the density of the precipitates is lower than the control standard, there is a method of adding a heat treatment or increasing the temperature of the heat treatment in the subsequent steps or increasing the time. When the density of the precipitate is higher than the control standard, the opposite may be done.

Although the DRAM has been described in this embodiment,
It goes without saying that the present invention is also effective for other memory LSIs such as flash memories, and microprocessors and LSIs for specific purposes. Furthermore, GaAs
The present invention is also effective for semiconductor devices other than silicon, such as ICs and semiconductor lasers.

[0029]

As described above, in the crystal defect measuring device and the method of manufacturing a semiconductor device using the same according to the present invention, the light irradiated to the crystal is reflected from the crystal surface and the defect in the crystal. By separating and detecting the scattered light at the same time, the depth position from the surface of the defect can be detected with high resolution below the wavelength of the irradiation light even if the sample surface fluctuates up and down due to the phase difference between these two lights. It becomes possible to measure with. Then, in the manufacturing process of the semiconductor device, crystal defects existing in the semiconductor substrate can be measured nondestructively by using the above device, and for example, element defects such as DRAM refresh defects can be found early. .

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an embodiment of a crystal defect measuring device according to the present invention.

FIG. 2 is an explanatory diagram for a crystal defect measuring method according to the present invention.

FIG. 3 is a schematic configuration diagram of another embodiment according to the present invention.

FIG. 4 is a plan view of a semiconductor substrate on which a semiconductor device is formed.

FIG. 5 is a cross-sectional view of an element structure for crystal defect measurement formed in a scribe region.

FIG. 6 is a cross-sectional view of a normal scribe region.

[Explanation of symbols]

1, 25 Laser light source 2 Laser light 3-1, 3-2, 3-3, 3-4, 3-5 Half mirror 4 Frequency modulator 5-1, 5-2 1/2 wavelength plate 6-1, 6 -2 Mirror 7 Thomson prism 8-1, 8-2, 8-3 Lens 9 Reflected light 10 Scattered light 11-1, 11-2 Fluorescence removal filter 12-1, 12-2 Photodetector 13-1, 13-2 Amplifier 14 Lock-in amplifier 15 Crystal sample 16 Piezo element 17 Moving stand 18 Piezo element driver 19 Moving stand driver 20 Control computer 21 Sample stand 22-1, 22-2 Pinhole 23 Lens pair without refractive power 24-1, 24-2 Glan-Thompson polarization prism 101 LSI device 102, 103 scribe region 104 silicon substrate 105 depletion layer 106 diffusion layer 107 storage electrode 108 capacitor Pacitor insulating film 109 Plate electrode 110 Interlayer insulating film 111 Field oxide film

Claims (7)

[Claims] 1. A crystal defect measuring device for measuring crystal defects by irradiating a crystal with light and detecting light scattered by defects in the crystal, wherein light reflected from the surface of the crystal and scattering from the defect. The light is separated and detected at the same time, the difference between the phase of the reflected light from the crystal surface and the phase of the scattered light from the defect is obtained, and the distance from the crystal surface to the defect is measured. And a crystal defect measuring device. 2. The light for irradiating the crystal is a linearly polarized light having a wavelength that penetrates into the crystal to be measured, and is a reflected light from the crystal surface having the same polarization component as the irradiated light. The crystal defect measuring device according to claim 1, wherein scattered light from the defect having a polarization component perpendicular to the irradiation light is detected by being separated by the polarization component. 3. The light irradiating the crystal has a wavelength that penetrates into the crystal to be measured and is circularly polarized light, and the reflected light from the crystal surface of the irradiation light is a quarter wavelength plate. The crystal according to claim 1, wherein the scattered light from the defect having a polarization component perpendicular to the polarization direction is detected by being separated into reflected light and polarization component. Defect measuring device. 4. The light for irradiating the crystal is branched into two, one of the branched light is irradiated to the crystal, and the other branched light is frequency-modulated by a certain frequency to form a reference light. The reference light is further divided into two to interfere with the reflected light from the crystal surface and the scattered light from the defect to form a beat signal, and the phase of the beat signal due to the reflected light and the beat signal due to the scattered light are formed. 2. The distance from the crystal surface to the defect is determined from the difference between the phase and the phase.
Alternatively, the crystal defect measuring device according to 2. 5. A Zeeman laser is used as a light source of light for irradiating the crystal, and one of two laser lights having different frequencies is used as light for irradiating the crystal and the other is used as the reference light. The crystal defect measuring device according to claim 3. 6. The size of a defect scatterer is measured by detecting the intensity of scattered light from a defect in the crystal and calculating from the intensity. The crystal defect measuring device according to. 7. A series of steps for manufacturing a semiconductor device, wherein at least a part of an element structure constituting a junction of the semiconductor device is formed in a part of a scribe region between regions where a semiconductor device is formed on a semiconductor wafer. A crystal defect is measured by using the crystal defect measuring device according to any one of claims 1 to 5 in a part of the element structure in the scribe region during a process or in a completed state. And a method for manufacturing a semiconductor device.