JPH06326368A - Crystal evaluating device and method for oxide superconductor, and device and method for forming thin film pattern - Google Patents

Abstract

PURPOSE:To evaluate the crystalization of oxide superconductor by a method wherein the lattice vibration energy in crystal is measured by irradiating the oxide superconductor with light employing the scattering technique utilizing the Raman effect, etc. CONSTITUTION:The laser beams 2 emitted from a laser emitter 1 are focussed by a focussing optical system 3 for irradiating an oxide superconductor specimen 5 with the laser beam 2 and the beams 2 scattered by said specimen 5 and then focussed by a backward scattering device are spectroscopically analyzed by a spectrophotometer 6 to detect the Raman spectrum by a detector 7. At this time, the laser beams 2 are oscillated by said specimen 5 to be scanned on an X-Y stage 4 with the laser emitter 1 fixed thereby making the multiple evaluation, defective detection, etc., of the superconductor 5 quadratically and efficiently feasible. Through these procedures, the data on the oxygen in the super-conductor 5 can be easily collected.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal evaluation apparatus for an oxide superconductor, a crystal evaluation method for an oxide superconductor, a thin film pattern forming apparatus and a thin film pattern forming method.
Specifically, defects (breakage) in patterned superconducting wiring
The present invention can be applied to a crystal evaluation apparatus and a crystal evaluation method for detecting, etc., and in particular, information on oxygen in an oxide superconductor can be easily obtained, and crystal evaluation of an oxide superconductor can be performed widely. Other than that, oxide superconductor crystal evaluation apparatus and oxide superconductor crystal evaluation method capable of improving the detection accuracy of defective portions and performing stable pattern formation, thin film pattern forming apparatus, and The present invention relates to a thin film pattern forming method.

In recent years, in the oxide superconductor technology, it is very difficult to form an oxide superconductor thin film such as wiring on a substrate, and the superconductivity varies depending on the amount of oxygen in the crystal. Its physical properties are easy to change in a wide range from the body to the insulator. In order to accurately measure the change in the physical properties of the oxide superconductor caused by the difference in the amount of oxygen in the crystal, the present invention has an advantage that information on oxygen in the crystal can be easily obtained. The method of light scattering using the effect is adopted. Although it may be possible to use an X-ray diffraction measurement method,
This method has a drawback that it is difficult to obtain information on oxygen in the oxide superconductor crystal that can be measured by the light scattering method based on the Raman effect.

The Raman spectrum obtained by the method of the light scattering method by the Raman effect corresponds to the energy (phonon, magnon, etc.) of elementary excitation in a solid, and a slight distortion of the crystal, oxygen deficiency and Very sensitive to changes in composition. Therefore, the present invention utilizes this characteristic to
The present invention relates to improvements in a crystal evaluation apparatus and a crystal evaluation method for controlling the quality of oxide superconductor crystals including oxide superconductor wiring. Note that the present invention is not limited only to the method of light scattering using the Raman effect, and information on the relationship between the oxide superconductor and the substrate and the surface state thereof can also be obtained by measuring fluorescence and reflectance. Obtainable.

Generally, it is very difficult to synthesize an oxide superconducting thin film, and in the case of a Bi-based superconductor, for example, at least three superconducting phases (Tc = 20,8) are used.
0, 110K), and when these are normally combined, these three phases are mixed. Therefore, thin quality inspection is very important for application. Normally, the pattern of the oxide superconducting film is formed by performing an etching process. However, if the pattern is formed arbitrarily, there are many defects in the pattern even if it is quite good in the thin overall. May occur, or the film other than the pattern may be a good quality superconducting film. In order to eliminate such a problem, according to the present invention, a two-dimensional good and bad mapping of the entire thin film is created before patterning, and the position where the pattern is formed is determined based on the information, which is effective. An oxide superconducting pattern can be formed on the substrate. The goodness and the badness are determined by precisely measuring the Raman spectrum using light scattering and the lattice constant by X-ray diffraction.

In the present invention, specifically, a scattering phenomenon using a laser as light, in particular, measurement of phonon and magnon energy by Raman effect, and change of lattice constant etc. are measured by using X-ray diffraction. By doing so, it is possible to measure the two-dimensional mapping of good and bad, and detect information on which position in the superconducting film should be patterned from the comprehensive good and bad mapping information and patterning information. In addition to the above, in the case of a defect such that the crystal is improved by heating at the defective portion,
Local heating by the laser can improve the crystal.

[0006]

2. Description of the Related Art Conventionally, as a crystal evaluation method for an oxide superconductor, an X-ray diffraction measurement method has been considered. According to this method, the lattice constant of the crystal or the atoms other than oxygen atoms in the crystal It has the advantage that the position can be detected. Conventionally, as a pattern forming method of an oxide superconductor, the surface condition is observed with a microscope, and when the surface condition is clearly defective, patterning is performed so as to avoid the defective portion.

[0007]

However, in the above-described crystal evaluation method for an oxide superconductor by the X-ray diffraction measurement method, information on oxygen, which is particularly important for the oxide superconductor, is obtained from the information on the crystal structure. Since it is difficult to obtain information such as oxygen deficiency and carrier concentration, there is a problem that the crystal evaluation of the oxide superconductor is very difficult due to the information. For example, when an oxide superconductor thin film is used as wiring, partial compositional deviation (superconductor / normal conductor / superconductor) can be detected if the oxygen deficiency amount is known, so that wiring breakage or the like is detected However, if the information about oxygen is not known as described above, these evaluations cannot be performed.

Next, in the above-described conventional oxide superconductor pattern forming method, the defect detection accuracy is 100 μm.
There is a problem that it is difficult to form a stable pattern because it is very poor and it is difficult to perform patterning so as to avoid a defective portion. Therefore, the present invention can easily obtain information about oxygen in an oxide superconductor, can obtain information such as oxygen deficiency and carrier concentration, and can extensively perform crystal evaluation of an oxide superconductor. Oxide superconductor crystal evaluation apparatus and oxide superconductor capable of efficiently performing quality control of an object superconductor, improving the detection accuracy of a defective portion, and performing stable pattern formation. An object of the present invention is to provide a crystal evaluation method, a thin film pattern forming apparatus, and a thin film pattern forming method.

[0009]

In order to achieve the above-mentioned object, a crystal evaluation apparatus for an oxide superconductor according to the present invention (Claim 1) is provided with a crystal evaluation apparatus for evaluating a crystal of an oxide superconductor. The light generating means for generating, the condensing optical means for condensing the light emitted by the light generating means, and the oxide superconductor to which the light condensed by the condensing optical means is irradiated are mounted. It has a mounting means, a spectroscopic means that disperses the scattered light scattered by the oxide superconductor, and a light detection means that detects the light dispersed by the spectroscopic means.

In order to achieve the above object, the crystal evaluation method for an oxide superconductor according to the present invention (claim 2) is a crystal evaluation method for evaluating a crystal for an oxide superconductor. Is condensed and irradiated, and the scattered light scattered by the oxide superconductor is spectrally detected to detect the crystal of the oxide superconductor. In the present invention (claims 3 and 4), a scanning means for scanning the light of the light generating means may be provided, or a scanning means for scanning the mounting means may be provided. In this case, in the former case, light such as a laser beam can be appropriately scanned on a fixed sample, and in the latter case, the light such as a laser beam can be fixed and the sample is scanned by a mounting means such as an XY stage. As a result, the sample can be appropriately scanned with the light as in the above case, so that a large number of samples can be efficiently evaluated in two dimensions and defects can be detected.

In the present invention (Claim 5), the condensing optical means may be configured to have an optical microscope. In this case, light such as a laser beam can be measured with a diameter of 5 μm or less. It is possible to increase the spatial resolution of measurement and perform fine measurement. In the present invention (claim 6),
The crystal evaluation of the oxide superconductor may be performed by measuring a Raman effect utilizing a phonon energy change or a magnon energy change, and in this case, the former phonon energy change in the crystal Composition shift, oxygen deficiency, crystal strain and impurities can be detected, and oxygen deficiency and carrier concentration can be detected by the change of magnon energy of the latter.

In the present invention (claim 7), the crystal evaluation of the oxide superconductor may be carried out by measuring the fluorescence utilizing the peak energy change of the fluorescence. In this case, It is possible to detect the disconnection when the oxide superconductor is used for the wiring by the change in the peak energy of the measured fluorescence. In the present invention (claim 8), the crystal evaluation of the oxide superconductor may be carried out by measuring light reflectance or Rayleigh light. In this case, the light reflectance or Rayleigh light is measured. By measuring, it is possible to detect the change in the surface state (concavities and convexities) of the crystal.

In the present invention (claim 9), the crystal evaluation of the oxide superconductor may be carried out by measuring an infrared reflection spectrum utilizing a phonon energy change. It is possible to detect a composition shift in a crystal, oxygen deficiency, crystal distortion, and impurities due to a change in phonon energy. The present invention (claims
In 10), the crystal evaluation of the oxide superconductor may be configured to be performed by measuring a polarized Raman spectrum using polarized light, and in this case, a change in crystal orientation is detected. can do.

In order to achieve the above object, a thin film pattern forming apparatus according to the present invention (claim 11) is a pattern forming apparatus for forming a thin film pattern, wherein at least one of light and X-ray is applied to the thin film. Means, a spectroscopic means for dispersing scattered light or diffraction rays scattered or diffracted by the thin film, a detection means for detecting light or X-rays dispersed by the spectroscopic means, and the thin film detected by the detection means Patterning means for patterning the thin film on the basis of the crystal information.

In order to achieve the above object, a thin film pattern forming method according to the present invention (claim 12) is a patterning method for forming a thin film pattern, wherein the thin film is irradiated with at least one of light and X-ray, The thin film crystal information is detected by spectrally detecting scattered light or diffraction lines scattered or diffracted by the thin film, and the thin film is patterned based on the detected crystal information of the thin film.

In the present invention (claim 13), the crystal information may be detected by measuring two-dimensional information of the thin film using condensed light or X-rays. In this case, the planar state can be accurately measured with a detection accuracy of 5 μm or less. The present invention (claim 14)
In, in the crystal information, defective portion information may be configured to perform measurement using light scattering or X-ray diffraction phenomenon, and in this case, it is possible to detect a crystal lattice constant or the like, The position of the defective portion in the film can be detected efficiently.

In the present invention (claim 15), storage means for storing good / defective mapping information of the thin film and pattern shape of the thin film, and driving means for two-dimensionally moving the pattern within the thin film area. Then, the drive means moves the pattern two-dimensionally, and the defective portion number counting means for counting the number of defective portions existing in the pattern for each position, and the defective portion number coefficient means are used as coefficients. It may be configured to have a pattern position instructing means for instructing a pattern position where the number of defective points is the smallest based on the number of defective points. In this case, the number of defective points existing in the pattern is counted, and this defective point is counted. Since it is possible to indicate the pattern position where the number of defective portions is the smallest based on the number, it is possible to judge the quality of the pattern.

In the present invention (claim 16), the defective portion may be provided with a laser generating means for locally heating with a laser. In this case, the quality of the crystal can be improved. . In the present invention (claims 11 to 16), the thin film can be preferably applied to a superconductor thin film, and can also be preferably applied to the case of manufacturing a superconducting circuit wiring.

[0019]

The present inventors conducted various experiments while repeating thought and error, and as a result, radiated light to the oxide superconductor by a light scattering method using the Raman effect or the like to determine the lattice vibration energy in the crystal. Focusing on the fact that it is possible to measure the vibration of oxygen by this lattice vibration energy, this method provides information on oxygen such as oxygen defects in oxide superconductor crystals that could not be measured by the conventional X-ray diffraction measurement method. I was able to get it.

Next, the inventors of the present invention conducted various experiments while repeating thought and error, and as a result, irradiate the thin film with at least one of light and X-rays, and scattered light scattered or diffracted by the thin film. Or by spectrally detecting the diffraction line,
The crystal information of the thin film was detected, and the thin film was patterned based on the detected crystal information of the thin film. As a result, defective portions could be detected with high accuracy and stable pattern formation could be performed.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is a block diagram showing the structure of an oxide superconductor crystal evaluation apparatus according to Embodiment 1 of the present invention.
In FIG. 1, 1 is a laser generator that generates a laser beam 2, 3 is a laser beam 2 that is generated by the laser generator 1, and the laser beam 2 can be squeezed to 5 μm or less for measurement. A condensing optical system having an optical microscope or the like capable of performing minute measurement, 4 is an oxide superconducting material such as Nd _2−x Ce _x CuO ₄ irradiated with light condensed by the condensing optical system 3. 2 is an XY stage on which a body sample 5 is placed.
Further, 6 is a spectroscope that disperses the scattered light scattered by the oxide superconductor 5, 7 is a detector that detects the light dispersed by the spectroscope 6, and 8 is the XY stage 4. It is a control device for controlling and controlling the spectroscope 6.

In this embodiment, the laser light 2 emitted from the laser generator 1 is condensed by the condensing optical system 3 and irradiated on the oxide superconductor sample 5. After the scattered light to be scattered is collected by the backscattering arrangement, it is separated by the spectroscope 6 and its Raman spectrum is detected by the detector 7. Here, since the laser light 2 is swung on the oxide superconductor sample 5 by fixing the laser generator 1 and scanning the XY stage 4, the oxide superconductor 5 is moved to 2 times.
A large number of evaluations, defect detections, etc. can be efficiently performed in a dimension. The laser light 2 may be configured to appropriately scan the fixed oxide superconductor 5.

Next, FIG. 2 is a graph showing the carrier concentration dependence of 2-magnon energy in this embodiment. Here, Nd _2−x Ce _x C that constitutes the oxide superconductor sample 5 is used.
The carrier concentration is changed depending on the difference in the amount of Ce substituted for Nd in the uO ₄ crystal. Thus, the Ce concentration x
When the carrier concentration changes such that Ce = 0.00, 0.02, 0.04, the peak of the 2-magnon energy changes as shown by peaks A1, A2, A3. Defects can be detected. In FIG. 2, as the Ce concentration increases, 2
-The peaks (A1, A2, A3) of magnon energy are small, and the carrier concentration is increasing accordingly. Thus, as can be seen from FIG. 2, whether or not the carrier concentration in the crystal has an optimum value can be detected from the spectrum of 2-magnon energy. The change in carrier concentration is caused by the change in composition in the crystal or the change in oxygen deficiency, and the measurement can also be used to inspect the composition in the crystal and the amount of oxygen deficiency.

Next, in the present invention, phonon spectra C1 to C10 and 2-magnon spectra B1 to B11 of various layered copper-containing oxide superconductors shown in FIGS.
As can be seen from the above, the crystal evaluation of the oxide superconductor may be performed by measuring the Raman effect using the phonon energy change or the 2-magnon energy change (similar to FIG. 2 described above). In this case, it is possible to detect the composition shift, oxygen deficiency, and crystal strain impurities in the crystal by the former change of phonon energy, and the oxygen deficiency and carrier concentration can be detected by the latter change of magnon energy. . Further, as can be seen from the dependence of the 2-magnon energy and the phonon energy on the bond distance between the atoms in the crystal shown in FIGS. 5 and 6, a difference in the interatomic distance in the crystal causes a change in energy. Defects related to subtle changes in the crystal structure can be detected by measuring the energy of the.

Next, in the present invention, the crystal evaluation of the oxide superconductor may be carried out by measuring the fluorescence utilizing the change in the peak energy of the fluorescence,
In this case, it is possible to detect the disconnection when the oxide superconductor is used for the wiring by the change in the peak energy of the measured fluorescence. Further, the crystal evaluation of the oxide superconductor may be configured to be performed by measuring laser light,
In this case, a change in the surface state (concavities and convexities) of the crystal can be detected by measuring the laser light.

Next, in the present invention, the crystal evaluation of the oxide superconductor may be carried out by measuring the infrared reflection spectrum utilizing the phonon energy change. In this case, the phonon energy is measured. It is possible to detect compositional deviation in the crystal, oxygen deficiency, crystal distortion, and impurities by the change of. Further, the crystal evaluation of the oxide superconductor may be configured to be performed by measuring a polarized Raman spectrum using polarized light, in which case a change in crystal orientation can be detected. it can. (Embodiment 2) FIG. 7 is a block diagram showing the structure of a crystal evaluation apparatus applied to an oxide superconductor pattern forming apparatus according to Embodiment 2 of the present invention. In FIG. 7, 11 is a laser generator for generating a laser beam 12, 13 is a condenser lens for condensing the laser beam 12 generated by the laser generator 11 via a mirror 14, and 15 is x, The stage is a stage on which an oxide superconductor sample 16 which is moved in the y and θ directions and which is irradiated with the laser beam 12 focused by the focusing lens 13 is placed. Next, 17 is a condenser lens that collects scattered light 18 scattered by the oxide superconductor sample 16, and 19 is a condenser lens 17
Reference numeral 20 denotes a spectroscope such as a triple spectroscope that disperses the scattered light 18 condensed by, and 20 denotes a detector such as an ultra-sensitive CCD that detects the light dispersed by the spectroscope 19.

Next, 21 is an X-ray source for generating X-rays 22, and 23a and 23b are slits for condensing the X-rays generated by the X-ray source 21. Further, 24a to 24c are slits for collecting the diffraction lines 25 diffracted by the oxide superconductor sample 16, and 26 is made of graphite or the like for separating the diffraction lines 25 collected by the slits 24a to 24c. 27 spectroscope
Is a detector for detecting X-rays dispersed by the spectroscope 26,
A control device 28 controls the stage 15, controls the detectors 20 and 27, and controls the spectroscope 19. In addition,
23a and 24b are solar slits.

In this embodiment, the X-ray diffraction measurement and the Raman scattering measurement are simultaneously performed, and the simultaneous mapping measurement of both the light and the X-ray measurement is performed. At this time, the oxide superconductor sample 16 was
It is in contact with the stage 15, which can change x, y, and θ. An Ar laser was used for the laser generator 11, and its wavelength was 514.5 nm. First, the laser light 12 generated by the laser generator 11 is passed through a mirror 14 and a condenser lens 13
The light 12 collected by the condenser lens 13 and condensed by the condenser lens 13 is applied to the oxide superconductor sample 16 on the stage 15, and scattered light 18 is extracted in the pseudo backscattering arrangement. Then scattered light 18
Is condensed by a condenser lens 17 and enters a spectroscope 19 such as a triple spectroscope. Then, the light dispersed by the spectroscope 19 is detected by a photodetector 20 such as an ultra-high sensitivity CCD.

Next, a Cu characteristic X-ray is used for the X-ray source 21,
The CuK ray generated by the X-ray source 21 is applied to the oxide superconductor sample 16 through the slits 23a and 23b, and the diffraction line 25 diffracted by the oxide superconductor sample 16 has three slits.
Enter the spectroscope 26 through 24a to 24c. At this time, the spectroscope 26
Reduces the background while cutting the Kβ ray. Next, the X-rays dispersed by the spectroscope 26 are detected by the detector 27 and counted by the scintillation counter. The two devices for light scattering and the device for X-ray diffraction measurement are controlled by one controller 28 including the movement of the stage 15.

In this example, as a result of measuring the Bi-based superconducting thin film, it was revealed that the difference between the 80K and 110K phases can be easily measured by the difference in the C ^- axis length of the crystals. . At this time, 80K phase (002)
The diffraction peak from the plane was 2θ, 5.4 °, and (002) of 110K phase was 4.8 °. Therefore, in the case of this substance, by rotating the stage about 0.5 degrees,
It was found that it was possible to judge good and bad.

Next, in Raman scattering measurement, Nd-
In the Ce-Cu-O based electronic superconducting thin film, the difference between good and bad was clearly observed. Unlike the Y-based and Bi-based substances, this substance is a carrier-doped substance by solid solution substitution. All oxide superconductors have a characteristic that Tc has a peak with respect to the carrier concentration. It is known that when the carrier concentration is lowered, it is transferred to a semiconductor or an insulator. As a result of Raman scattering measurement, when the carrier concentration decreases, a broad 2-magnon spectrum centered at about 3000 cm ^-1 is observed. Therefore, it was found that by measuring the Raman scattering in this region, it is possible to detect a defect caused by a decrease in carrier concentration. Information about the carrier concentration cannot be obtained by X-ray diffraction measurement.

In this way, the simultaneous mapping measurement of X-ray diffraction and Raman scattering can be performed to comprehensively detect the position of the defective portion in the film. FIG. 2 shows the inspection and pattern position determination method. The pattern position that minimizes the defective portion is determined from the comprehensively determined good / bad mapping data and the pattern shape data. By forming a pattern based on the result,
The superconducting wiring could be manufactured efficiently.

Next, in the present invention, the quality of the thin film
Storage means for storing defective mapping information and the pattern shape of the thin film, driving means for two-dimensionally moving the pattern in the thin film area, and two-dimensionally moving the pattern by the driving means, And a pattern position designating means for designating a pattern position where the number of defective spots is the smallest based on the number of defective spots corrected by the defective spot counting means for counting the number of defective spots existing in the pattern for each position. In this case, the number of defective points existing in the pattern can be counted, and the pattern position where the number of defective points is the smallest can be indicated based on the number of defective points. can do.

In the present invention, the defective portion may be provided with a laser generating means for locally heating with a laser. In this case, the quality of the crystal can be improved.

[0035]

According to the present invention, information on oxygen in an oxide superconductor can be easily obtained, and information on oxygen deficiency, carrier concentration, etc. can be obtained to extensively evaluate an oxide superconductor. Therefore, the quality control of the oxide superconductor can be efficiently performed, and the detection accuracy of the defective portion can be improved, and stable pattern formation can be performed.

[Brief description of drawings]

FIG. 1 is a block diagram showing a configuration of a crystal evaluation apparatus for an oxide superconductor according to a first embodiment of the present invention.

FIG. 2 is a diagram showing the carrier concentration dependence of 2-magnon energy according to Example 1 of the present invention.

FIG. 3 is a diagram showing phonon spectra and 2-magnon spectra of various oxide superconductors applicable to the present invention.

FIG. 4 is a diagram showing phonon spectra and 2-magnon spectra of various oxide superconductors applicable to the present invention.

FIG. 5 is a diagram showing a bond distance dependency of 2-magnon energy applicable to the present invention between atoms in a crystal.

FIG. 6 is a diagram showing bond length dependence of phonon energy applicable to the present invention between atoms in a crystal.

FIG. 7 is a block diagram showing a configuration of a crystal evaluation apparatus applicable to an oxide superconductor pattern forming apparatus according to a second embodiment of the present invention.

FIG. 8 is a diagram showing an inspection method and a pattern position inspection method according to a second embodiment of the present invention.

[Explanation of symbols]

 1,11 Laser generator 2,12 Laser light 3 Condensing optical system 4 XY stage 5,16 Oxide superconductor sample 6,19,26 Spectroscope 7,20,27 Detector 8,28 Controller 13 Condenser lens 14 Mirror 15 Stage 17 Condenser lens 18 Scattered light 21 X-ray source 22 X-ray 23a, 23b, 24a, 24b, 24c Slit 25 Diffraction line

Claims (16)

[Claims] 1. A light generating means (1) for generating light in a crystal evaluation apparatus for evaluating a crystal of an oxide superconductor (5).
A light collecting optical means (3) for collecting the light emitted by the light generating means, and the oxide superconductor (5) irradiated with the light collected by the light collecting optical means (3). A mounting means (4) for mounting a light source, a spectroscopic means (6) for spectroscopically scattering light scattered by the oxide superconductor (5), and a light spectroscopically dispersed by the spectroscopic means (6) An optical superconductor crystal evaluation apparatus, comprising: 2. A crystal evaluation method for evaluating the crystal of an oxide superconductor (5), wherein light is focused on the oxide superconductor (5) and irradiated to the oxide superconductor (5). ) The crystal evaluation method for an oxide superconductor, characterized by performing the crystal evaluation of the oxide superconductor (5) by spectrally detecting the scattered light scattered by. 3. An oxide superconductor crystal evaluation apparatus according to claim 1, further comprising scanning means for scanning the light of said light generating means (1). 4. The crystal evaluation apparatus for an oxide superconductor according to claim 1, further comprising scanning means for scanning the placing means (4). 5. The crystal evaluation device for an oxide superconductor according to claim 1, 3, or 4, wherein said condensing optical means (3) has an optical microscope. 6. The oxide superconductor according to claim 2, wherein the crystal evaluation of the oxide superconductor (5) is performed by measuring a Raman effect utilizing a phonon energy change or a magnon energy change. Conductor crystal evaluation method. 7. The oxide superconductor according to claim 2, wherein the crystal evaluation of the oxide superconductor (5) is performed by measuring fluorescence utilizing a change in peak energy of fluorescence. Crystal evaluation method of body. 8. The oxide superconductor according to claim 2, 6, or 7, wherein the crystal evaluation of the oxide superconductor (5) is performed by measuring light reflectance or Rayleigh scattered light. Crystal evaluation method of body. 9. The oxide according to claim 2, wherein the crystal evaluation of the oxide superconductor (5) is carried out by measuring an infrared reflection spectrum utilizing a phonon energy change. For evaluating crystal of superconductors. 10. The crystal evaluation of the oxide superconductor (5) is performed by measuring a polarized Raman spectrum using polarized light.
A crystal evaluation method for an oxide superconductor according to the description. 11. A pattern forming apparatus for forming a pattern of a thin film, wherein an irradiation means for irradiating the thin film with at least one of light and X-rays, and a scattered light or a diffraction line scattered or diffracted by the thin film is dispersed. And a patterning unit for patterning the thin film based on crystal information of the thin film detected by the detecting unit. Characteristic thin film pattern forming device. 12. A pattern forming method for forming a pattern of a thin film, wherein at least one of light and X-rays is applied to the thin film, and scattered light or diffraction lines scattered or diffracted by the thin film are spectrally detected. The thin film pattern forming method is characterized by detecting the crystal information of the thin film by performing the above, and patterning the thin film based on the detected crystal information of the thin film. 13. The thin film pattern forming method according to claim 12, wherein the crystal information is detected by measuring two-dimensional information of the thin film using condensed light or X-rays. . 14. The thin film pattern forming method according to claim 12, wherein defect information of the crystal information is detected by performing measurement using light scattering or X-ray diffraction phenomenon. . 15. A storage unit for storing good / defective mapping information of the thin film and a pattern shape of the thin film, a driving unit for two-dimensionally moving the pattern within the thin film area, and the pattern by the driving unit. Two-dimensionally,
Defective point number counting means for counting the number of defective points existing in the pattern for each position, and designating a pattern position where the number of defective points is smallest based on the defective point number calculated by the defective point number coefficient means. 12. The thin film pattern forming apparatus according to claim 11, further comprising pattern position indicating means. 16. The thin film pattern forming apparatus according to claim 11, further comprising a laser generating unit that locally heats the defective portion with a laser.