JPH07294949A - Processing method for electrode terminal - Google Patents

Processing method for electrode terminal

Info

Publication number
JPH07294949A
JPH07294949A JP8619794A JP8619794A JPH07294949A JP H07294949 A JPH07294949 A JP H07294949A JP 8619794 A JP8619794 A JP 8619794A JP 8619794 A JP8619794 A JP 8619794A JP H07294949 A JPH07294949 A JP H07294949A
Authority
JP
Japan
Prior art keywords
short
electrode
liquid crystal
edge
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8619794A
Other languages
Japanese (ja)
Other versions
JP2983836B2 (en
Inventor
Yasuaki Miyake
泰明 三宅
Hiroshi Soyama
浩 曽山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MITSUBOSHI DAIYAMONDO KOGYO KK
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
MITSUBOSHI DAIYAMONDO KOGYO KK
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MITSUBOSHI DAIYAMONDO KOGYO KK, Mitsuboshi Diamond Industrial Co Ltd filed Critical MITSUBOSHI DAIYAMONDO KOGYO KK
Priority to JP6086197A priority Critical patent/JP2983836B2/en
Publication of JPH07294949A publication Critical patent/JPH07294949A/en
Application granted granted Critical
Publication of JP2983836B2 publication Critical patent/JP2983836B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the whole of processing stages by removing short-circuit electrodes by laser beam machining to minimize the stage of machining and omitting the washing stage. CONSTITUTION:With respect to a liquid crystal display device D obtained from a large-area liquid crystal panel by division, an edge 25 of a glass plate G2 where a short-circuit electrode 22 is formed is chamfered by grinding. Since a glass end face 24 is accurately broken differently from break of an ear part having a narrow width, grinding of the glass end face 24 and a corner 26 is unnecessary and it is sufficient if only the edge 25 is ground, and dry grinding can be adopted. Thereafter, an area (q) on the outside (the side including the short-circuit electrode 22) of a line 23 traversing the end parts of electrode terminals 21 is irradiated with ArF laser. Thus, only the electrode 22 on the area (q) is removed by the decomposition and peeling action obtained by excimer laser irradiation.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、液晶表示器の各電極端
子を短絡している短絡電極を除去することで電極端子を
形成仕上げする処理方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method for forming and finishing electrode terminals by removing short-circuit electrodes which short-circuit each electrode terminal of a liquid crystal display.

【0002】[0002]

【従来の技術】図1および図2は、大面積の液晶パネル
から個々の単位に分割された液晶表示器Dの平面図およ
び側面図である。この液晶表示器Dは、スペーサを兼ね
るシール剤Vでもって2枚のガラス板G1,G2を所定の
ギャップで貼合わせ、そのギャップ部に液晶Lを封入し
たものである。下面のガラス板G2には個々の液晶素子
を形成するトランジスタ20が形成されており、それら
の各トランジスタ20は、外部接続用として、ガラス板
2の突き出し部(耳)Qに形成された電極端子21にて
引き出されており、そして、各電極端子21は、トラン
ジスタが静電気で絶縁破壊しないよう、短絡電極22で
もって相互に短絡されている。使用時にあたっては、こ
の短絡電極22が形成された耳の箇所を幅Wにわたって
切除すべく、ライン23に沿ってブレイクされるが、そ
の従来の加工方法を図3を用いて説明する。
2. Description of the Related Art FIGS. 1 and 2 are a plan view and a side view of a liquid crystal display D divided into individual units from a large area liquid crystal panel. In this liquid crystal display D, two glass plates G 1 and G 2 are bonded at a predetermined gap with a sealant V that also serves as a spacer, and a liquid crystal L is sealed in the gap. Transistors 20 forming individual liquid crystal elements are formed on the glass plate G 2 on the lower surface, and each of the transistors 20 is formed on the protruding portion (ear) Q of the glass plate G 2 for external connection. The electrode terminals 21 are led out, and the electrode terminals 21 are short-circuited with each other by the short-circuit electrode 22 so that the transistor is not broken down by static electricity. At the time of use, a break is made along the line 23 in order to cut off the portion of the ear where the short-circuit electrode 22 is formed over the width W. The conventional processing method will be described with reference to FIG.

【0003】図3(A)図に示した液晶表示器Dに対し
て、(B)図に示すように、各電極端子21の末端部を横
切るようにしてスクライブライン23が刻まれ、そして
(C)図に示すように、スクライブライン23に沿ってブ
レイクされ、短絡電極22が形成された耳の箇所が切除
される。次に(D)図に示すように、電極端子21が形成
されたガラス板G2の端面24を研磨すると共に、電極
端子21が形成された面のガラス板G2のエッジ25に
対して面取り(糸面取り)と、コーナ26に対してコーナ
ー研磨が行われる。端面24を研磨するのは、耳幅Wが
少ないために、正確にブレイクが行われないことがある
ためである。研磨量が多いと熱的な悪影響が生じるため
湿式研磨機を用いる。
With respect to the liquid crystal display D shown in FIG. 3 (A), as shown in FIG. 3 (B), a scribe line 23 is engraved so as to cross the end of each electrode terminal 21, and
As shown in FIG. 6C, the portion of the ear where the short circuit electrode 22 is formed by cutting along the scribe line 23 is cut off. Next, as shown in FIG. 3D, the end face 24 of the glass plate G 2 on which the electrode terminals 21 are formed is polished, and the edge 25 of the glass plate G 2 on the surface on which the electrode terminals 21 are formed is chamfered. (Chamfering of thread), and corner polishing is performed on the corner 26. The end face 24 is grounded because the edge width W is small, and thus the break may not be performed accurately. A wet polishing machine is used because a large amount of polishing has a bad thermal effect.

【0004】[0004]

【発明が解決しようとする課題】このように、従来の電
極端子処理では、スクライバーにてスクライブラインを
入れ、次にブレイクマシンで耳落としを行い、次いで湿
式研磨機で研磨を行い、この後、この加工で発生した砥
粒、ガラス粉等の粉塵を純水で洗浄し、最後に乾燥仕上
げを行うといった手間のかかる多くの工程を必要とし
た。
As described above, in the conventional electrode terminal treatment, the scribe line is inserted by the scriber, the ear is removed by the break machine, and the polishing is then performed by the wet polisher. Many labor-intensive steps were required, such as cleaning the abrasive particles, glass dust, and other dust generated by this processing with pure water, and finally performing dry finishing.

【0005】本発明は、上述した課題を解決するために
なされたものであり、スクライブやブレイクの機械加工
工程を省き、加工処理を簡略化できる電極端子処理方法
を提供することを目的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to provide an electrode terminal treatment method which can omit the machining process of scribing and breaking and simplify the processing.

【0006】[0006]

【課題を解決するための手段】本第1発明は、大面積の
液晶パネルからの分割により得た液晶表示器の電極端子
処理方法において、電極端子相互を短絡している短絡電
極の箇所のガラス端部を切除することで電極端子を処理
する電極端子の処理方法に替えて、電極端子相互を短絡
している短絡電極が形成された面のガラス端部のエッジ
を乾式研磨機にて糸面取り加工を施した後、短絡電極の
箇所にレーザを照射し、その分解剥離作用により短絡電
極を除去することで電極端子の処理を完了することを特
徴とする。
The first invention is a method of treating electrode terminals of a liquid crystal display obtained by dividing a liquid crystal panel having a large area. The edge of the glass edge of the surface where the short-circuit electrode that short-circuits the electrode terminals is formed is thread chamfered with a dry grinder instead of the method of treating the electrode terminal by cutting off the edge. After the processing, the short-circuit electrode is irradiated with a laser, and the short-circuit electrode is removed by the decomposition and peeling action of the short-circuit electrode to complete the treatment of the electrode terminal.

【0007】本第2発明は、大面積の液晶パネルからの
分割により得た液晶表示器の電極端子処理方法におい
て、電極端子相互を短絡している短絡電極の箇所のガラ
ス端部を切除することで電極端子を処理する電極端子の
処理方法に替えて、電極端子相互を短絡している短絡電
極に対してレーザを照射することで分解剥離作用により
短絡電極を除去すると共に、そのレーザが有する熱エネ
ルギーによって短絡電極が形成された面のガラスの端部
エッジを溶融して糸面取り仕上げを行うことで電極端子
の処理を完了することを特徴とする。
According to the second aspect of the present invention, in a method of treating electrode terminals of a liquid crystal display obtained by dividing a large-area liquid crystal panel, a glass end portion of a short-circuiting electrode which short-circuits the electrode terminals is cut off. In place of the electrode terminal treatment method, the short-circuit electrode that short-circuits the electrode terminals is irradiated with a laser to remove the short-circuit electrode by the decomposition and peeling action, and the heat that the laser has It is characterized in that the processing of the electrode terminals is completed by melting the edge portion of the glass on the surface where the short-circuit electrode is formed by energy and performing the thread chamfering finish.

【0008】[0008]

【作用】本第1発明によれば、短絡電極の箇所に、例え
ば請求項2にあるように、ArFの放電ガスを用い、波
長193nmのエキシマレーザを照射すると、分離剥離
作用によって短絡電極のみが除去されるので、従来の処
理方法で必要とした電極部分のガラスを切除する工程を
省略できる。
According to the first aspect of the present invention, when the short-circuit electrode is irradiated with an excimer laser having a wavelength of 193 nm at the location of the short-circuit electrode, for example, by using ArF discharge gas, only the short-circuit electrode is separated and separated. Since it is removed, the step of cutting off the glass of the electrode portion, which is required in the conventional processing method, can be omitted.

【0009】本第2発明において、例えば請求項4にあ
るように、KrFの放電ガスを用い、波長248nmの
エキシマレーザを照射すれば、分解剥離作用によって短
絡電極が除去されると共に、波長の長い(赤外線よりの)
強力なレーザ照射を行なったことによる熱加工作用によ
って端部エッジが溶融し、糸面取り加工を行ったのと同
じ効果が得られるので機械的なエッジ加工を省ける。
According to the second aspect of the present invention, for example, when a discharge gas of KrF is used and an excimer laser having a wavelength of 248 nm is irradiated, the short-circuit electrode is removed by the decomposition and peeling action, and the wavelength is long. (From infrared)
The edge of the end portion is melted by the heat processing effect of the strong laser irradiation, and the same effect as that of the thread chamfering is obtained, so that mechanical edge processing can be omitted.

【0010】[0010]

【実施例】図4は、本発明の処理方法を実施するのに適
したレーザ加工機(住友重機械工業(株)社製、型番IN
DEX200)の制御ブロック図である。1は本機を総
括的に制御する集中コントローラである。2は、レーザ
発振器であり、放電ガスとして、外部ボンベのコック切
り替えにより、Ar−FまたはKr−Fの組み合わせで選
択的に供給可能となっている。レーザ発振器2よりのレ
ーザビームは、長円の断面を持ち、そのレーザビームか
らスリット形状のレーザビームを得るために設けたの
が、マスクモジュール3であり、レーザ発振器2よりの
レーザ光路に位置する。4は、ミラーであり、マスクモ
ジュール3を通過した横方向のレーザ光をXYテーブル
5上のワーク(液晶表示器)6に向ける。又、ミラー4と
ワーク6との間の光路には、前記のスリット形状のビー
ムを所望の加工ビームのサイズとなるようピント調節す
るイメージレンズが設けられる。8はイメージレンズ7
を上下方向に移動させるためのZ軸移動機構である。9
は、ミラー4上方に設置されたCCTV(カメラ)であ
り、ワーク6の加工状況を捕える。10は、CCTV9
による加工状況並びに各種加工データ等を表示するモニ
ターである。
EXAMPLE FIG. 4 shows a laser processing machine (manufactured by Sumitomo Heavy Industries, Ltd., model number IN) suitable for carrying out the processing method of the present invention.
It is a control block diagram of DEX200). Reference numeral 1 is a centralized controller that controls the machine as a whole. Reference numeral 2 denotes a laser oscillator, which can selectively supply the discharge gas in a combination of Ar-F or Kr-F by switching the cock of the external cylinder. The laser beam from the laser oscillator 2 has an elliptical cross section, and the mask module 3 is provided to obtain a slit-shaped laser beam from the laser beam, which is located in the laser optical path from the laser oscillator 2. . Reference numeral 4 denotes a mirror, which directs the laser light in the horizontal direction that has passed through the mask module 3 toward a work (liquid crystal display) 6 on the XY table 5. An image lens is provided in the optical path between the mirror 4 and the work 6 to adjust the focus of the slit-shaped beam so that the beam has a desired processing beam size. 8 is an image lens 7
Is a Z-axis moving mechanism for vertically moving. 9
Is a CCTV (camera) installed above the mirror 4, and captures the processing status of the work 6. 10 is CCTV 9
It is a monitor that displays the processing status and various processing data by.

【0011】ここで放電ガスとして希ガスのKr,Ar,
Fを用いたレーザ加工機について述べる。一般に産業用
に多用されているCO2レーザは大出力(1KW程度)で
赤外線域の波長を持ち、溶融、気化の熱的加工により金
属加工を行うのに対して、本レーザ加工機は、比較的小
出力(数十W)で紫外線域の波長を持つレーザ(エキシマ
レーザ)の持つ光化学反応(分子結合開烈)による非熱的
な分解剥離作用によって、セラミックやガラスに対して
熱影響の少ない加工を高精度で行う。
Here, as discharge gas, rare gases such as Kr, Ar,
A laser processing machine using F will be described. CO 2 lasers, which are commonly used for industrial purposes, have a large output (about 1 kW) and a wavelength in the infrared region, and perform metal processing by thermal processing such as melting and vaporization, while this laser processing machine A small output (several tens of W) and a laser with a wavelength in the ultraviolet range (excimer laser) have a non-thermal decomposition and peeling action by a photochemical reaction (explosion of molecular bonds), which has little thermal effect on ceramics and glass. Highly accurate processing.

【0012】上記のレーザ加工装置でArFガスを用い
て行う本第1発明の電極端子処理方法を図5を参照して
述べる。大面積の液晶パネルよりの分割により得た(A)
図の液晶表示器Dは、(B)図に示すように、短絡電極2
2が形成されたガラス板G2の端部エッジ25に対して
研磨により面取り加工を行う。この場合、ガラス端面2
4は、幅の狭い耳部に対するブレイクと違って正確にブ
レイクされているため、この端面24およびコーナー2
6の研磨は行わず、エッジ25のみ研磨すれば良いので
乾式研磨により行なえる。
The electrode terminal treatment method according to the first aspect of the present invention, which is performed by using the ArF gas in the above laser processing apparatus, will be described with reference to FIG. Obtained by dividing from a large-area liquid crystal panel (A)
The liquid crystal display D shown in FIG.
The chamfering process is performed on the end edge 25 of the glass plate G 2 on which 2 is formed by polishing. In this case, the glass end face 2
4 is precisely broken unlike the break for the narrow ear, so that the end face 24 and the corner 2
The polishing of 6 is not performed, and only the edge 25 may be polished, so that dry polishing can be performed.

【0013】この後、各電極端子21の端部を横切るラ
イン23より外側(短絡電極22を含む側)の領域qに対
し、ArFレーザ照射を行う。この時の照射データは、 波長:193nm 出力エネルギー:100mJ/パルス 最大パルス繰返し数:200pps ビームサイズ:6mm×12mm であり、このビームサイズを、マスクモジュール3およ
びイメージレンズ7を用いて、ワーク6へのレーザの照
射面積(加工サイズ)を0.5mm×2mmに絞り、この
照射領域を100mm/secの移動速度で、前記領域q
上を走査するよう、XYテーブル5を駆動した。このエ
キシマレーザ照射により得られる分解剥離作用によっ
て、領域q上の電極24のみが(C)図のごとく除去され
た。
After that, ArF laser irradiation is performed on the region q outside the line 23 (the side including the short-circuit electrode 22) that crosses the end of each electrode terminal 21. The irradiation data at this time is: wavelength: 193 nm output energy: 100 mJ / pulse maximum pulse repetition rate: 200 pps beam size: 6 mm x 12 mm. This beam size is applied to the workpiece 6 using the mask module 3 and the image lens 7. The irradiation area (processing size) of the laser is reduced to 0.5 mm × 2 mm, and this irradiation area is moved at a moving speed of 100 mm / sec to the area q
The XY table 5 was driven so as to scan above. Only the electrode 24 on the region q was removed as shown in (C) by the decomposition and peeling action obtained by the excimer laser irradiation.

【0014】尚、図1において、切除して廃棄される耳
幅Wは、ブレイク工程の際にある程度の幅を確保する必
要があったが、図5の今回除去した耳幅W'は、短絡電
極22の形成に必要な最小幅であれば良いのでガラス材
料を節約できる。
It should be noted that, in FIG. 1, the ear width W to be cut off and discarded needs to have a certain width during the breaking step, but the ear width W'removed this time in FIG. 5 is short-circuited. Since the minimum width required for forming the electrode 22 is sufficient, glass material can be saved.

【0015】次にKrFガスを用いて行う本第2発明の
電極端子処理方法を図6を参照して述べる。大面積の液
晶パネルよりの分割により得た(A)図の液晶表示器Dに
対して、各電極端子21の端部を横切るライン23より
外側の領域qに対し、KrFレーザ照射を行う。この時
の照射データは、 波長:248nm 出力エネルギー:250mJ/パルス 最大パルス繰返し数:200pps ビームサイズ:8mm×25mm であり、このビームサイズを、マスクモジュール3およ
びイメージレンズ7を用いて、ワーク6へのレーザの照
射面積(加工サイズ)を2mm×6mmに絞り、この照射
領域を100mm/secの移動速度で、前記領域q上を
走査するよう、XYテーブル5を駆動した。このレーザ
照射によって、(C)図に示すように、領域q上の電極2
4が除去され、又、前回照射のレーザに比べて波長の長
い(赤外線よりの)強力なレーザ照射により得られる熱加
工作用によって領域qの端部エッジ25が溶融し、糸面
取り加工を行ったのと同じ効果が得られ、機械的なエッ
ジ研磨を省略できる。
Next, the method of treating the electrode terminals of the second aspect of the present invention using KrF gas will be described with reference to FIG. In the liquid crystal display D shown in FIG. 7A obtained by dividing a liquid crystal panel having a large area, KrF laser irradiation is performed on a region q outside the line 23 that crosses the end of each electrode terminal 21. The irradiation data at this time is: wavelength: 248 nm output energy: 250 mJ / pulse maximum pulse repetition rate: 200 pps beam size: 8 mm x 25 mm. This beam size is applied to the workpiece 6 using the mask module 3 and the image lens 7. The irradiation area (processing size) of the laser No. 2 was narrowed down to 2 mm × 6 mm, and the XY table 5 was driven so as to scan the irradiation area at a moving speed of 100 mm / sec. As a result of this laser irradiation, as shown in FIG.
No. 4 was removed, and the end edge 25 of the region q was melted by the thermal processing action obtained by the strong laser irradiation having a longer wavelength (than infrared rays) than the laser of the previous irradiation, and the yarn chamfering processing was performed. The same effect can be obtained, and mechanical edge polishing can be omitted.

【0016】[0016]

【発明の効果】以上説明したように、本第1発明では、
機械加工による短絡電極の切除に替えて、レーザ加工に
よって短絡電極を除去したので、機械加工の工程を最小
限に減らすことができ、それ故、洗浄工程も省略できる
ので、全体の処理工程を大幅に低減できる。又、機械加
工の工程が少なくなることにより、当業界で最も忌避さ
れなくてはならない発塵を抑えることができ、作業環境
の維持に著しい効果が得られる。又、第2発明にあるよ
うに、波長の少し長い強力なレーザを照射すれば、分解
剥離作用によって短絡電極が除去されると共に、レーザ
の熱加工作用によって端部エッジが溶融し、糸面取り加
工を行ったのと同じ作用が得られるので、機械加工工程
を完全に省くことができる。
As described above, according to the first invention,
Since the short-circuit electrode is removed by laser machining instead of cutting off the short-circuit electrode by machining, the machining process can be reduced to a minimum and therefore the cleaning process can be omitted. Can be reduced to In addition, since the number of machining processes is reduced, it is possible to suppress dust generation, which is most repelled in the industry, and it is possible to obtain a remarkable effect in maintaining a working environment. Further, as in the second invention, when a powerful laser having a slightly longer wavelength is irradiated, the short-circuit electrode is removed by the decomposition and peeling action, and the end edge is melted by the thermal processing action of the laser, and the thread chamfering process is performed. Since the same effect as that of the above-mentioned is obtained, the machining step can be omitted altogether.

【図面の簡単な説明】[Brief description of drawings]

【図1】 液晶表示器の平面図FIG. 1 is a plan view of a liquid crystal display.

【図2】 液晶表示器の側面図FIG. 2 is a side view of the liquid crystal display.

【図3】 液晶表示器に対する従来の電極処理の流れを
示した図
FIG. 3 is a diagram showing a flow of conventional electrode processing for a liquid crystal display.

【図4】 本発明の電極処理方法を実施するのに適した
レーザ加工機の制御ブロック図
FIG. 4 is a control block diagram of a laser processing machine suitable for carrying out the electrode processing method of the present invention.

【図5】 本第1発明の電極処理方法に基づく処理の流
れを示した図
FIG. 5 is a diagram showing a flow of processing based on the electrode processing method of the first invention.

【図6】 本第2発明の電極処理方法に基づく処理の流
れを示した図
FIG. 6 is a diagram showing a flow of processing based on the electrode processing method of the second invention.

【符号の説明】[Explanation of symbols]

1 集中コントローラ 2 レーザ発振器 3 マスクモジユール 4 ミラー 5 XYテーブル 6 ワーク 7 イメージレンズ 8 Z軸移動機構 9 CCTV 10 モニター 21 電極端子 22 短絡電極 1 Centralized Controller 2 Laser Oscillator 3 Mask Module 4 Mirror 5 XY Table 6 Work 7 Image Lens 8 Z-axis Moving Mechanism 9 CCTV 10 Monitor 21 Electrode Terminal 22 Short-circuit Electrode

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 大面積の液晶パネルからの分割により得
た液晶表示器の電極端子処理方法において、 電極端子相互を短絡している短絡電極の箇所のガラス端
部を切除することで電極端子を処理する電極端子の処理
方法に替えて、 電極端子相互を短絡している短絡電極が形成された面の
ガラス端部のエッジを乾式研磨機にて糸面取り加工を施
した後、短絡電極の箇所にレーザを照射し、その分解剥
離作用により短絡電極を除去することで電極端子の処理
を完了することを特徴とする電極端子処理方法。
1. A method for treating electrode terminals of a liquid crystal display obtained by division from a large-area liquid crystal panel, in which electrode terminals are cut off by cutting off glass ends of short-circuit electrodes where electrode terminals are short-circuited with each other. In place of the method of treating the electrode terminals to be treated, after the edge of the glass edge of the surface where the short-circuit electrodes that short-circuit the electrode terminals are formed, the edge of the glass edge is subjected to thread chamfering with a dry grinder A method for treating an electrode terminal, wherein the treatment of the electrode terminal is completed by irradiating a laser beam on the substrate and removing the short-circuit electrode by the decomposition and peeling action.
【請求項2】 放電ガスとしてArFを用い、波長19
3nmのエキシマレーザを用いて行う請求項1記載の電
極端子処理方法。
2. ArF is used as the discharge gas and has a wavelength of 19
The electrode terminal treatment method according to claim 1, which is performed using an excimer laser of 3 nm.
【請求項3】 大面積の液晶パネルからの分割により得
た液晶表示器の電極端子処理方法において、 電極端子相互を短絡している短絡電極の箇所のガラス端
部を切除することで電極端子を処理する電極端子の処理
方法に替えて、 電極端子相互を短絡している短絡電極に対してレーザを
照射することで分解剥離作用により短絡電極を除去する
と共に、そのレーザが有する熱エネルギーによって短絡
電極が形成された面のガラスの端部エッジを溶融して糸
面取り仕上げを行うことで電極端子の処理を完了するこ
とを特徴とする電極端子処理方法。
3. A method for treating electrode terminals of a liquid crystal display obtained by division from a large-area liquid crystal panel, by cutting off the glass ends of the short-circuit electrodes where the electrode terminals are short-circuited. Instead of the method of treating the electrode terminals to be treated, by irradiating the short-circuit electrodes that short-circuit the electrode terminals with a laser, the short-circuit electrodes are removed by the decomposition and peeling action, and the short-circuit electrodes are removed by the thermal energy of the laser. A method for treating an electrode terminal, characterized in that the treatment of the electrode terminal is completed by melting the edge edge of the glass on the surface where the mark is formed and performing the thread chamfering finish.
【請求項4】 放電ガスとしてKrFを用い、波長24
8nmのエキシマレーザを用いて行う請求項3記載の電
極端子処理方法。
4. KrF is used as a discharge gas and has a wavelength of 24.
The electrode terminal processing method according to claim 3, which is performed using an 8 nm excimer laser.
JP6086197A 1994-04-25 1994-04-25 Electrode terminal treatment method Expired - Fee Related JP2983836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6086197A JP2983836B2 (en) 1994-04-25 1994-04-25 Electrode terminal treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6086197A JP2983836B2 (en) 1994-04-25 1994-04-25 Electrode terminal treatment method

Publications (2)

Publication Number Publication Date
JPH07294949A true JPH07294949A (en) 1995-11-10
JP2983836B2 JP2983836B2 (en) 1999-11-29

Family

ID=13880064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6086197A Expired - Fee Related JP2983836B2 (en) 1994-04-25 1994-04-25 Electrode terminal treatment method

Country Status (1)

Country Link
JP (1) JP2983836B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003295219A (en) * 2002-02-26 2003-10-15 Lg Phillips Lcd Co Ltd Liquid crystal panel, liquid crystal panel inspection device, and method for manufacturing liquid crystal display device using the same
KR100495799B1 (en) * 1997-08-25 2005-09-20 삼성전자주식회사 Method for removing shorting bar of thin film transistor liquid crystal display
KR100580389B1 (en) * 1998-09-24 2006-08-11 삼성전자주식회사 LCD panel manufacturing method
CN1320389C (en) * 2002-03-21 2007-06-06 Lg.菲利浦Lcd株式会社 Grinding miller of LCD panel
JP2008023547A (en) * 2006-07-19 2008-02-07 Takei Electric Industries Co Ltd Method and apparatus for removing thin film

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100495799B1 (en) * 1997-08-25 2005-09-20 삼성전자주식회사 Method for removing shorting bar of thin film transistor liquid crystal display
KR100580389B1 (en) * 1998-09-24 2006-08-11 삼성전자주식회사 LCD panel manufacturing method
JP2003295219A (en) * 2002-02-26 2003-10-15 Lg Phillips Lcd Co Ltd Liquid crystal panel, liquid crystal panel inspection device, and method for manufacturing liquid crystal display device using the same
US7092067B2 (en) 2002-02-26 2006-08-15 Lg. Philips Lcd Co., Ltd. Liquid crystal panel, apparatus for inspecting the same, and method of fabricating liquid crystal display thereof
US7259802B2 (en) 2002-02-26 2007-08-21 Lg.Philips Lcd Co., Ltd. Liquid crystal panel, apparatus for inspecting the same, and method of fabricating liquid crystal display thereof
CN1320389C (en) * 2002-03-21 2007-06-06 Lg.菲利浦Lcd株式会社 Grinding miller of LCD panel
JP2008023547A (en) * 2006-07-19 2008-02-07 Takei Electric Industries Co Ltd Method and apparatus for removing thin film

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