JPH07287046A - Ic characteristic measurement method - Google Patents

Ic characteristic measurement method

Info

Publication number
JPH07287046A
JPH07287046A JP6106032A JP10603294A JPH07287046A JP H07287046 A JPH07287046 A JP H07287046A JP 6106032 A JP6106032 A JP 6106032A JP 10603294 A JP10603294 A JP 10603294A JP H07287046 A JPH07287046 A JP H07287046A
Authority
JP
Japan
Prior art keywords
under test
device under
measurement
pusher
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6106032A
Other languages
Japanese (ja)
Inventor
Takashi Saito
隆 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6106032A priority Critical patent/JPH07287046A/en
Publication of JPH07287046A publication Critical patent/JPH07287046A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a method for measuring IC characteristics which can increase the efficiency for measuring IC characteristics. CONSTITUTION:A device under test is supplied to a plurality of sockets 5 for measuring IC for activating a pusher 7. Then, an insulation continuity check is performed for the device to be measured, thus judging whether the device under test with a poor insulation continuity exists or not. When the device under test which is judged to be in insulation continuity failure exists, the pusher 7 corresponding to the device under test is activated again, thus moving to a functional test for the device under test.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、複数の被測定デバイス
を同時に測定する機能を備えたIC特性測定装置を用い
て、被測定デバイスであるIC(半導体集積回路)の特
性測定を行う方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring characteristics of an IC (semiconductor integrated circuit) which is a device to be measured by using an IC characteristic measuring apparatus having a function of simultaneously measuring a plurality of devices to be measured. It is a thing.

【0002】[0002]

【従来の技術】一般に、一連の組立工程を終えて製品化
されたICに対しては、デバイス評価としての特性測定
が行われる。そして、IC特性測定用の装置としては、
同時に2個以上の被測定デバイスを評価する、いわゆる
同時測定機能(並列測定機能とも呼ばれる)を備えたも
のがある。これは、複数のIC測定用ソケットに対して
プッシャーの作動により被測定デバイスを押し付け、こ
れによってIC測定用ソケットの測定子と被測定デバイ
スの外部リードとをそれぞれ接触させて特性測定を行う
ものである
2. Description of the Related Art Generally, a characteristic measurement for device evaluation is performed on an IC manufactured into a product after a series of assembling steps. And as an apparatus for measuring IC characteristics,
Some have a so-called simultaneous measurement function (also called a parallel measurement function) for simultaneously evaluating two or more devices under measurement. In this method, the device under test is pressed against a plurality of IC measurement sockets by the operation of a pusher, and the contact point of the IC measurement socket and the external lead of the device under test are brought into contact with each other to perform characteristic measurement. is there

【0003】[0003]

【発明が解決しようとする課題】ところで、この種のI
C特性測定装置においては、プッシャーの作動により被
測定デバイスをIC測定用ソケットに押し付けた際に、
IC測定用ソケットに対する被測定デバイスのメカニカ
ルな位置決め精度や両者の接続部分への異物(塵埃等)
付着などに起因して、被測定デバイスが良品であるにも
かかわらず、IC測定用ソケットの測定子と被測定デバ
イスの外部リードとの間に良好な接続状態が得られず、
導通絶縁チェック時に不良と判定(誤認)される場合が
あった。そうした場合、従来のIC特性測定方法では、
不良と判定された被測定デバイスを除いて機能テストを
行ったり、特性測定終了後に、絶縁導通不良と判定され
た被測定デバイスを再度、IC特性測定装置に投入して
対応していた。このため、同時測定での稼働率が低下す
るだけでなく、再測定のための余計な工数がかかってい
た。
By the way, this kind of I
In the C characteristic measuring device, when the device under test is pressed against the IC measuring socket by the operation of the pusher,
Mechanical positioning accuracy of the device under test with respect to the IC measurement socket, and foreign matter (dust etc.) to the connection part of both
Although the device under test is a good product due to adhesion or the like, a good connection state cannot be obtained between the probe of the IC measurement socket and the external lead of the device under test,
In some cases, it was judged as wrong (misidentified) during the continuity insulation check. In such a case, the conventional IC characteristic measuring method is
A function test was performed except for the device under test determined to be defective, or after the characteristic measurement was completed, the device under test determined to be defective in insulation conduction was again put into the IC characteristic measuring apparatus to deal with the problem. For this reason, not only the operating rate for simultaneous measurement is lowered, but also extra man-hours are required for re-measurement.

【0004】本発明は、上記問題を解決するためになさ
れたもので、IC特性測定での効率アップを図ることを
目的とする。
The present invention has been made to solve the above problems, and an object thereof is to improve the efficiency in IC characteristic measurement.

【0005】[0005]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、複数のIC測定用ソケッ
トにプッシャーの作動によって被測定デバイスを押し付
け、IC測定用ソケットの測定子と被測定デバイスの外
部リードとをそれぞれ接触させて特性測定を行うIC特
性測定装置において、複数のIC測定用ソケットにそれ
ぞれ被測定デバイスを供給してプッシャーを作動させた
のち、被測定デバイスに対する絶縁導通チェックを行っ
て絶縁導通不良の被測定デバイスが有るか否かを判定す
る。このとき、絶縁導通不良と判定された被測定デバイ
スが有る場合はその被測定デバイスに対応したプッシャ
ーを再作動させ、その後、被測定デバイスに対する機能
テストに移行するといった測定手順を採っている。
SUMMARY OF THE INVENTION The present invention has been made to achieve the above object, and a device to be measured is pressed against a plurality of IC measuring sockets by the operation of a pusher to provide a probe for the IC measuring sockets. In an IC characteristic measuring device for measuring characteristics by making contact with external leads of a device under test, the device under test is supplied to a plurality of IC measurement sockets and a pusher is operated, and then insulation conduction for the device under test is conducted. A check is performed to determine whether or not there is a device under test with defective insulation continuity. At this time, if there is a device under test that has been determined to have poor insulation continuity, the pusher corresponding to the device under test is restarted, and then a functional test is performed for the device under test.

【0006】[0006]

【作用】本発明のIC特性測定方法においては、絶縁導
通チェック時に不良と判定された被測定デバイスに対応
してプッシャーを再作動させることにより、IC測定用
ソケットに対する被測定デバイスの位置決め精度や接続
部分への異物付着などに起因した接続ミスが解消され
る。
According to the IC characteristic measuring method of the present invention, the positioning accuracy and connection of the device to be measured with respect to the IC measurement socket are adjusted by reactivating the pusher corresponding to the device to be measured which is determined to be defective during the insulation continuity check. Connection mistakes caused by foreign matter adhering to parts are eliminated.

【0007】[0007]

【実施例】以下、本発明の好適な実施例について図面を
参照しながら詳細に説明する。図1は同時測定機能(並
列測定機能)を備えたIC特性測定装置の構成例を示す
概略図である。図1において、1はマガジン、2はディ
ストリビュータ、3はストレージトラック、4はトラン
スファ、5はIC測定用ソケット、6はテストヘッド、
7はプッシャー、8はICテスタである。一つのマガジ
ン1内には、被測定デバイスであるIC(半導体集積回
路)9が規定個数ずつ収納されるようになっており、こ
のマガジン1から一個ずつIC9がディストリビュータ
2によって個々のストレージトラック3に分配される。
また、ストレージトラック3に取り込まれたIC9はト
ランスファ4を介してそれぞれIC測定用ソケット5に
供給され、そこでプッシャー7の作動によりIC測定用
ソケット5に押し付けられる。テストヘッド6は、被測
定デバイスに印加する試料用電源やタイミングジェネレ
ータ出力、パターンジェネレータ出力部、さらにはデバ
イス出力を取り込むための入力部を備えたもので、これ
はICテスタ8に電気的に接続されている。ちなみに、
高温測定時や低温測定時など、IC9に温度変化を与え
る必要がある場合は、IC9をストレージトラック3に
分配し終えた時点で、所定の温度条件が得られるまで待
機することになる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic diagram showing a configuration example of an IC characteristic measuring apparatus having a simultaneous measurement function (parallel measurement function). In FIG. 1, 1 is a magazine, 2 is a distributor, 3 is a storage track, 4 is a transfer, 5 is an IC measuring socket, 6 is a test head,
7 is a pusher and 8 is an IC tester. A specified number of ICs (semiconductor integrated circuits) 9 that are devices to be measured are stored in one magazine 1, and ICs 9 from the magazine 1 are individually stored in each storage track 3 by a distributor 2. To be distributed.
Further, the ICs 9 taken into the storage track 3 are supplied to the IC measuring sockets 5 via the transfer 4, respectively, and are pressed against the IC measuring sockets 5 by the operation of the pusher 7 there. The test head 6 is provided with a sample power source to be applied to the device under test, a timing generator output, a pattern generator output section, and an input section for taking in the device output, which is electrically connected to the IC tester 8. Has been done. By the way,
When it is necessary to change the temperature of the IC 9 during high temperature measurement or low temperature measurement, the IC 9 waits until a predetermined temperature condition is obtained when the IC 9 is distributed to the storage track 3.

【0008】続いて、本発明に係わるIC特性測定方法
について図2のフローチャートを参照しながら説明す
る。先ず、ステップS1では、ディストリビュータ2に
よってストレージトラック3に分配されたIC9が規定
個数(図例の場合は8個)分だけトランスファ4を介し
てIC測定用ソケット5にそれぞれ供給される。次い
で、ステップS2では、全てのプッシャー9を一斉に作
動させて、個々のIC9をIC測定用ソケット5に押し
付ける。これにより、被測定デバイスであるIC9の外
部リード(不図示)がIC測定用ソケット5側の測定子
(不図示)に接続することになる。
Next, the IC characteristic measuring method according to the present invention will be described with reference to the flowchart of FIG. First, in step S1, a prescribed number (8 in the case of the example) of the ICs 9 distributed by the distributor 2 to the storage tracks 3 are supplied to the IC measurement sockets 5 via the transfer 4. Next, in step S2, all the pushers 9 are actuated simultaneously to press the individual ICs 9 against the IC measurement sockets 5. As a result, the external lead (not shown) of the IC 9 which is the device to be measured is connected to the probe (not shown) on the IC measuring socket 5 side.

【0009】続いて、ステップS3では、IC測定用ソ
ケット5に装着されたIC9に対して絶縁導通(オープ
ン・ショート)チェックを行い、さらにステップS4で
は、絶縁導通チェックを行った結果において絶縁導通不
良のIC9が有るか否かを判定する。ここで、絶縁導通
チェックを行ったIC9が全て良品と判定された場合は
そのままステップS5に進み、一個でも絶縁導通不良と
判定されたIC9が有る場合はステップS6に移行す
る。
Subsequently, in step S3, an insulation conduction (open / short) check is performed on the IC 9 mounted in the IC measurement socket 5, and in step S4, insulation conduction failure is found as a result of the insulation conduction check. It is determined whether or not there is IC9. Here, if all the ICs 9 that have been subjected to the insulation continuity check are determined to be non-defective, the process proceeds directly to step S5, and if there is even one IC9 that is determined to be defective in insulation continuity, the process proceeds to step S6.

【0010】ステップS6では、例えば装置制御系のカ
ウンタで計数される不良判定回数(ステップS4で不良
IC有りと判定した回数)Aを1インクリメント(+
1)する。同時測定開始時には不良判定回数Aが0(ゼ
ロ)に設定されているため、このステップS6では不良
判定回数Aが1となる。次に、ステップS7では、不良
判定回数Aが規定回数Bに達したか否かを判定する。こ
こで、「規定回数B」とは、予めオペレータによって設
定される回数値であり、この回数値は、同時測定可能な
IC個数や機能テストの所要時間、さらにはメカニカル
なIC9の位置決め精度や接続部分への異物付着に伴う
接続ミスの発生頻度等を考慮して適宜設定される。本実
施例では、規定回数Bが2回に設定されている場合につ
いて述べる。
In step S6, the number A of failure determinations (the number of times it is determined that there is a defective IC in step S4) A counted by, for example, a counter of the device control system is incremented by 1 (+).
1) Do. Since the number of failure determinations A is set to 0 (zero) at the start of simultaneous measurement, the number of failure determinations A becomes 1 in this step S6. Next, in step S7, it is determined whether the defect determination number A has reached the specified number B. Here, the “specified number of times B” is a number of times set in advance by the operator, and this number of times is the number of ICs that can be simultaneously measured, the time required for the functional test, and the positioning accuracy and connection of the mechanical IC 9. It is set as appropriate in consideration of the frequency of occurrence of connection errors due to the adhesion of foreign matter to the portion. In this embodiment, the case where the prescribed number B is set to 2 will be described.

【0011】ステップS7においては、不良検出回数A
(=1)が規定回数B(=2)に達していないためステ
ップS8に進み、そこで不良ICの位置情報をホールド
する。すなわち、ステップS8では、上記ステップS4
で絶縁導通不良と判定されたIC9がいずれのIC測定
用ソケット5に装着されているかを例えば装置制御系の
メモリに位置情報として記憶する。
In step S7, the number of defects detected A
Since (= 1) has not reached the specified number B (= 2), the process proceeds to step S8, where the position information of the defective IC is held. That is, in step S8, the above step S4
Which IC measurement socket 5 the IC 9 determined to have poor insulation continuity is attached to is stored as position information in, for example, a memory of the device control system.

【0012】続いて、ステップS9では、先にホールド
した位置情報に基づいて、絶縁導通不良と判定されたI
C9に対応するプッシャー7を再作動させる。これによ
り、絶縁導通不良と判定されたIC9は一旦、プッシャ
ー7による押圧状態から解放されたのち、再びプッシャ
ー7によってIC測定用ソケット5に押し付けられる。
本発明者の実験結果によると、もともと良品であるにも
かかわらず、IC測定用ソケット5に対するメカニカル
な位置決め精度や接続部分への異物付着によって絶縁導
通不良と判定されたIC9の場合、プッシャー7の再作
動によって、そのほとんどがIC測定用ソケット5に良
好にコンタクトされることが証明されている。
Succeedingly, in a step S9, it is determined that the insulation conduction is defective based on the previously held position information.
Reactivate the pusher 7 corresponding to C9. As a result, the IC 9 which has been determined to have poor insulation continuity is once released from the pressed state by the pusher 7 and then pressed again to the IC measurement socket 5 by the pusher 7.
According to the results of experiments conducted by the present inventor, although the IC 9 was originally a good product, the IC 9 was determined to have poor insulation conduction due to mechanical positioning accuracy with respect to the IC measurement socket 5 and foreign matter adhered to the connection portion. It has been proved that most of them are brought into good contact with the IC measuring socket 5 by the re-operation.

【0013】その後、ステップS9からステップS3に
戻り、上記同様の動作が繰り返される。そして、これに
続くステップS4では、はじめに絶縁導通不良と判定さ
れたIC9が、その後のプッシャー7の再作動によって
IC測定用ソケット5に良好に接続された場合は不良I
C無しと判定され、そのままステップS5に進む。
Then, the process returns from step S9 to step S3, and the same operation as described above is repeated. Then, in step S4 subsequent to this, if the IC 9 initially determined to be defective in insulation conduction is properly connected to the IC measurement socket 5 by the subsequent re-operation of the pusher 7, there is a defect I.
It is determined that there is no C, and the process directly proceeds to step S5.

【0014】これに対して、もともと不良品であるため
に絶縁導通不良と判定されたIC9の場合は、プッシャ
ー7を再作動させても何ら効果がないため、ステップS
4では再び不良IC有りと判定され、ステップS6に移
行する。その後、ステップS6では不良判定回数Aが1
インクリメントされ、この時点で不良判定回数Aは2と
なる。したがって、次のステップS7では、不良判定回
数A(=2)が規定回数B(=2)に達したと判定して
ステップS10に移行し、そこで不良判定回数Aをゼロ
リセット(A→0)したのち、ステップS5に進む。
On the other hand, in the case of the IC 9 which is originally determined to be defective due to defective insulation and conduction, there is no effect even if the pusher 7 is re-activated, so that the step S
In 4, it is again determined that there is a defective IC, and the process proceeds to step S6. Then, in step S6, the number of failure determinations A is 1
It is incremented, and the defect determination number A becomes 2 at this point. Therefore, in the next step S7, it is determined that the number of failure determinations A (= 2) has reached the specified number of times B (= 2), the process proceeds to step S10, and the number of failure determinations A is reset to zero (A → 0). After that, the process proceeds to step S5.

【0015】ステップS5では、被測定デバイスである
IC9に対して種々の機能テストを行い、最後のステッ
プS6ではIC特性測定の結果に基づいて良品・不良品
の分類を行う。以降は、ストレージトラック3からIC
測定用ソケット5に規定個数のIC9が順次供給され、
上記同様の手順にしたがってIC9の特性測定が行われ
る。
In step S5, various functional tests are performed on the IC9 which is the device under test, and in the final step S6, non-defective products and defective products are classified based on the results of the IC characteristic measurement. After that, from storage track 3 to IC
A specified number of ICs 9 are sequentially supplied to the measurement socket 5,
The characteristics of the IC 9 are measured according to the same procedure as above.

【0016】なお、上記実施例においては、ステップS
7での規定回数Bを2回に設定してプッシャー7の再作
動を1回だけ行うようにしたが、その理由としては、プ
ッシャー7の再作動によってIC測定用ソケット5とI
C9との接触ミスが解消される確率がきわめて高いため
である。しかしながら、本発明は上記回数に限定される
ものではなく、先にも述べたように同時測定可能なIC
個数や機能テストの所要時間、さらにはメカニカルな被
測定デバイスの位置決め精度や接続部分への異物付着に
伴う接続ミスの発生頻度等を考慮して、プッシャー7の
再作動回数を2回以上に設定してもよい。ちなみに、プ
ッシャー7の再作動回数を2回以上に設定した場合で
も、プッシャー7の作動時間がステップS5における機
能テストの所要時間に比較して微々たるものであること
を考慮すれば、特にIC特性測定での効率アップを阻害
するものではない。
In the above embodiment, step S
The specified number B of 7 is set to 2 times and the pusher 7 is re-operated only once. The reason is that the re-operation of the pusher 7 causes the IC measurement sockets 5 and I
This is because there is an extremely high probability that a contact error with C9 will be resolved. However, the present invention is not limited to the above-mentioned number of times, and as described above, the IC capable of simultaneous measurement is used.
Set the number of re-operations of the pusher 7 to 2 or more in consideration of the number of pieces, the time required for the function test, the positioning accuracy of the mechanical device under test, and the frequency of connection errors due to foreign matter adhering to the connection part. You may. Incidentally, even when the number of re-operations of the pusher 7 is set to 2 or more, considering that the operation time of the pusher 7 is minute compared with the time required for the functional test in step S5, the IC characteristics are particularly small. It does not hinder the efficiency improvement in measurement.

【0017】[0017]

【発明の効果】以上、説明したように本発明のIC特性
測定方法によれば、被測定デバイスに対する絶縁導通チ
ェックを行って絶縁導通不良の被測定デバイスが有るか
否かを判定し、絶縁導通不良と判定された被測定デバイ
スが有る場合はその被測定デバイスに対応したプッシャ
ーを再作動させることにより、IC測定用ソケットに対
する被測定デバイスの位置決め精度や接続部分への異物
付着等に起因した接続ミスが解消され、被測定デバイス
が良品であるにもかかわらず、IC測定用ソケットの測
定子と被測定デバイスの外部リードとの間に良好な接続
状態が得られなかった被測定デバイスについてはそのほ
どんどが良品と判定されるようになる。その結果、上記
接続ミスに伴う機能テスト時の稼働率低下を防止できる
とともに、IC測定用ソケットに対する被測定デバイス
の接続ミスが激減し、その分だけ再測定のための余計な
手間を省くことができるため、IC特性測定での効率ア
ップが図られる。
As described above, according to the IC characteristic measuring method of the present invention, the insulation continuity check is performed on the device under test to determine whether there is a device under test with defective insulation continuity, and the insulation continuity is determined. If there is a device under test that has been determined to be defective, restart the pusher corresponding to that device to connect the device due to the positioning accuracy of the device under test with respect to the IC measurement socket and the adhesion of foreign matter to the connection part. For the device under test in which the error was eliminated and the device under test was a good product, a good connection was not obtained between the probe of the IC measurement socket and the external lead of the device under test. Most of the items will be judged as non-defective. As a result, it is possible to prevent a decrease in the operation rate at the time of a functional test due to the connection mistake, and to drastically reduce the connection mistake of the device under test to the IC measurement socket, thereby saving extra labor for remeasurement. Therefore, the efficiency in IC characteristic measurement can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】IC特性測定装置の構成例を示す概略図であ
る。
FIG. 1 is a schematic diagram showing a configuration example of an IC characteristic measuring device.

【図2】本発明に係わるIC特性測定方法の一実施例を
示すフローチャートである。
FIG. 2 is a flowchart showing an embodiment of an IC characteristic measuring method according to the present invention.

【符号の説明】[Explanation of symbols]

5 IC測定用ソケット 7 プッシャー 9 IC 5 IC measurement socket 7 Pusher 9 IC

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 複数のIC測定用ソケットにプッシャー
の作動によって被測定デバイスを押し付け、前記IC測
定用ソケットの測定子と前記被測定デバイスの外部リー
ドとをそれぞれ接触させて特性測定を行うIC特性測定
装置において、 先ず、前記複数のIC測定用ソケットにそれぞれ被測定
デバイスを供給して前記プッシャーを作動させ、 次いで、被測定デバイスに対する絶縁導通チェックを行
って絶縁導通不良の被測定デバイスが有るか否かを判定
し、 前記絶縁導通不良と判定された被測定デバイスが有る場
合はその被測定デバイスに対応したプッシャーを再作動
させ、 続いて、被測定デバイスに対する機能テストに移行する
ことを特徴とするIC特性測定方法。
1. An IC characteristic in which a device under test is pressed against a plurality of IC measuring sockets by the operation of a pusher, and a probe of the IC measuring socket and an external lead of the device under test are brought into contact with each other to perform a characteristic measurement. In the measuring apparatus, first, each device to be measured is supplied to each of the plurality of IC measurement sockets to activate the pusher, and then the insulation continuity check is performed on the device to be measured to see if there is a device to be measured with insulation conduction failure. It is determined whether or not there is a device under test determined to be defective insulation conduction, the pusher corresponding to the device under test is re-activated, and subsequently, a functional test for the device under test is performed. IC characteristic measuring method.
JP6106032A 1994-04-20 1994-04-20 Ic characteristic measurement method Pending JPH07287046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6106032A JPH07287046A (en) 1994-04-20 1994-04-20 Ic characteristic measurement method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6106032A JPH07287046A (en) 1994-04-20 1994-04-20 Ic characteristic measurement method

Publications (1)

Publication Number Publication Date
JPH07287046A true JPH07287046A (en) 1995-10-31

Family

ID=14423303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6106032A Pending JPH07287046A (en) 1994-04-20 1994-04-20 Ic characteristic measurement method

Country Status (1)

Country Link
JP (1) JPH07287046A (en)

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