JPH07283155A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor manufacturing device where a zone temperature is surely controlled by a method wherein heat insulating pieces are provided between a reaction tube and a heater so as to partition a space between them into zones. CONSTITUTION:Heat insulating material is provided between a reaction tube 1 and a heater 11. The heat insulating material is composed of heat insulating pieces 13a which extend vertical to the center axis of the reaction tube 1 making a turn around the tube 1 and heat insulating pieces 13b which extend in parallel with the center axis of the reaction tube 1, and the heat insulating pieces 13a and the heat insulating pieces 13b are combined into a grid. The heat insulating pieces 13a are provided at positions corresponding to the zone boundaries. A space between the reaction tube 1 and the heater 11 are partitioned into sub-spaces by the heat insulating pieces 13a and 13b, gas on the surface of the heater 11 is restrained from making convection or heat is restrained from making advection through the sub-spaces. Therefore, each zone can be surely, thermally controlled. By this setup, a substrate can be controlled in temperature distribution by heating.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a single-wafer type diffusion / CVD apparatus for processing substrates such as glass and wafer one by one.

[0002]

2. Description of the Related Art A conventional semiconductor manufacturing apparatus will be described with reference to FIGS.

A plurality of substrate support pins 2 are provided at the center of a reaction tube 1 having a flat space, and gas ducts 3 and 4 are provided at both ends of the reaction tube 1. The reaction tube 1
A heater 11 including a heating element and a heat insulating material is provided around the heater so as to heat the inside of the reaction tube. The gas ducts 3 and 4 are provided with gas introduction pipes 5 and 6, and exhaust pipes 7 and 8 are connected. The gas duct 3 is provided with a substrate loading / unloading port 9, and the substrate loading / unloading port 9 is opened and closed by a gate valve 10.

To process the substrate 12, the gate valve 10 is opened, the substrate 12 is inserted into the reaction tube 1 through the substrate loading / unloading port 9 by a substrate carrier (not shown), and the substrate 12 is mounted on the substrate support pin 2. To do. The inside of the reaction tube 1 is exhausted through the exhaust pipes 7 and 8, and the reaction gas is introduced through the gas introduction pipes 5 and 6, and the substrate 12 is heated by the heater 11. The reaction gas is decomposed and reaction products are deposited on the surface of the substrate to form a thin film. The gas after the reaction is discharged from the exhaust pipes 7 and 8.

The processed substrate 12 is conveyed from the substrate loading / unloading port 9 and the gate valve 10.

[0006]

In the processing of the substrate 12, the heater 11 is divided into zones a, b and c, and temperature control is performed for each zone.

However, the gas existing on the surface of the heater 11 convects and an ascending air current is generated from the lower heater, so that the convection of the gas, particularly the heat transfer between the heaters due to the ascending air current occurs. Furthermore, when there is a temperature difference between the zones, heat transfer occurs due to gas entrainment between the zones. For this reason, it is difficult to control the zone temperature accurately, and even when the same temperature control is performed, the temperature of the upper heater becomes higher than that of the lower heater, which makes the temperature control difficult.

In view of the above situation, the present invention aims to provide a semiconductor manufacturing apparatus capable of reliably performing zone temperature control.

[0009]

SUMMARY OF THE INVENTION The present invention is a semiconductor manufacturing apparatus in which a heater is provided around a reaction tube, and a substrate loaded in the reaction tube is heat-treated, and a plurality of heaters are provided between the reaction tube and the heater. Or a heat insulating material that partitions the inside of the heater into a plurality of zones, or a heat insulating material that partitions the inside of the heater and between the reaction tube and the heater into a plurality of zones. It is characterized by that.

[0010]

[Function] Since it is divided into a plurality of zones by the heat insulating material, convection and heat transfer between the divided zones are suppressed,
The temperature control of the substrate to be processed becomes easy.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

In FIGS. 1 and 2, the same components as those shown in FIGS. 3 and 4 are designated by the same reference numerals, and the description thereof will be omitted.

A heat insulating material 13 is provided between the reaction tube 1 and the heater 11.
To provide. The heat insulating material 13 includes a heat insulating piece 13a which extends in a direction perpendicular to the axis of the reaction tube 1 and which goes around the reaction tube 1, and the reaction tube 1
A heat insulating piece 13b extending parallel to the axis of the heat insulating piece 13a, and the heat insulating piece 13a and the heat insulating piece 13b are combined in a grid pattern. Further, at least the heat insulating piece 13a is provided in the heater 11
It is provided at a position corresponding to the zone boundary of.

The space between the reaction tube 1 and the heater 11 is divided into a plurality of small spaces by the heat insulating material 13 to prevent gas convection on the surface of the heater 11 or to transfer heat between the sections. Is suppressed. Therefore, heat control for each zone can be reliably performed.

A heat insulating material may be provided at the zone boundary inside the heater 11, and the heater 11 itself may be divided into zones by the heat insulating material. Further, the heat insulating material 13 may divide the space between the reaction tube 1 and the heater 11 and further the heater 11 itself into a plurality of zones.

[0016]

As described above, according to the present invention, the temperature distribution of the zone-controlled heater can be reflected in the reaction tube, and the temperature control of the heater, that is, the heating temperature distribution of the substrate can be controlled.

[Brief description of drawings]

FIG. 1 is a side sectional view showing an embodiment of the present invention.

FIG. 2 is a plan sectional view showing an embodiment of the present invention.

FIG. 3 is a side sectional view showing a conventional example.

FIG. 4 is a plan sectional view showing a conventional example of the same.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction tube 11 Heater 12 Substrate 13 Heat insulating material 13a Heat insulating piece 13b Heat insulating piece

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/324 D

Claims (3)

[Claims] 1. In a semiconductor manufacturing apparatus in which a heater is provided around a reaction tube and a substrate loaded in the reaction tube is subjected to heat treatment, a heat insulating material which is divided into a plurality of zones between the reaction tube and the heater is provided. A semiconductor manufacturing device characterized by being provided. 2. In a semiconductor manufacturing apparatus for providing a heater around a reaction tube and heat-treating a substrate loaded in the reaction tube, a heat insulating material for partitioning the inside of the heater into a plurality of zones is provided. Semiconductor manufacturing equipment. 3. In a semiconductor manufacturing apparatus in which a heater is provided around a reaction tube and a substrate loaded in the reaction tube is heat-treated, the inside of the heater and the space between the reaction tube and the heater are divided into a plurality of zones. A semiconductor manufacturing apparatus having a heat insulating material.