JPH07283131A - Illuminator, scanning aligner and device manufacturing method employing them - Google Patents

Abstract

PURPOSE:To uniformize the exposure of a photosensitive substrate surface and transfer an excellent pattern image over the entire range of the sensitive substrate surface by a method wherein the illumination position related to the scanning direction of light pulse to be applied next is changed in response to the intensity of light pulse applied previously. CONSTITUTION:The scanning speed of a reticle 10 and a semiconductor substrate 12 are kept constant. Further, pulse intervals of exposure light from a light source are kept constant and the amount of exposure of each pulse is monitored. When the amount of exposure of pulse is larger than a desired amount of exposure, at the time of the next pulse application, the position of an illumination region is displaced in the opposite direction to a scanning movement direction of the reticle 10 from a position at the time of pulse applied previously. Thus, the exposure time period is relatively reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an illuminating device, a scanning type exposure apparatus and a device manufacturing method using them, and particularly to I.
It is suitable for use in a lithography process for manufacturing semiconductor devices such as C and LSI, imaging devices such as CCDs, display devices such as liquid crystal panels, and devices such as magnetic heads.

[0002]

2. Description of the Related Art In recent years, high integration of semiconductor devices such as ICs and LSIs has been increasing more and more, and accompanying this, the progress of fine processing technology for semiconductor wafers has been remarkable. As a projection exposure apparatus that forms the center of this fine processing technology, a unit-size projection exposure apparatus (mirror projection aligner) that exposes while scanning a mask and a photosensitive substrate to a unit-magnification mirror optical system having an arc-shaped exposure area, There is a reduction projection exposure device (stepper) which forms a pattern image of a mask on a photosensitive substrate by a refraction optical system and exposes the photosensitive substrate by a step-and-repeat method.

Recently, there has been proposed a step-and-scan type scanning projection exposure apparatus capable of obtaining a high resolution and enlarging the screen size.

FIG. 15 is a schematic view showing an example of this scanning type projection exposure apparatus. In FIG. 15, 201 is a light source such as a mercury lamp that radiates ultraviolet rays, and is arranged near the first focus of the elliptical mirror 202. The light flux from the light emitting portion of the light source 201 is condensed at the second focus 203 by the elliptical mirror 202. The light focused on the second focal point 203 is focused on the light incident surface of the optical integrator 206 such as a fly-eye lens through the condenser lens 204 and the mirror 205. The fly-eye lens is composed of a collection of a plurality of minute lenses, and a plurality of secondary light sources are formed in the vicinity of the light exit surface thereof.

Reference numeral 207 denotes a condenser lens, which illuminates the masking blade 209 with Koehler illumination by a light beam from a secondary light source. 212 is a reticle. The masking blade 209 and the reticle 212 are the imaging lens 210.
And the mirror 211, and the reticle 212 is arranged at a conjugate position by the opening shape of the masking blade 209.
Defines the shape and dimensions of the illuminated area at.

The illumination area of the reticle 212 is generally in the form of a rectangular slit whose scanning direction is shorter than the direction orthogonal to the scanning direction. A projection optical system 213 reduces and projects the circuit pattern drawn on the reticle 212 onto a semiconductor substrate (wafer) 214.
A control system 216 includes the reticle 212 and the semiconductor substrate 2
14 is accurately moved at a constant speed at the same ratio as the magnification of the projection optical system 213 by a driving device (not shown).

A light amount detector 215 indirectly monitors the exposure amount on the semiconductor substrate 214 by monitoring a part of the luminous flux divided by the half mirror 208. Reference numeral 218 denotes a control system, which is the semiconductor substrate 21.
Light quantity calculator 2 so that the exposure amount in 4 is always kept constant
The electric power input to the mercury lamp of the light source 201 is controlled according to the exposure amount value from 17. By keeping the exposure amount constant while always keeping the scanning speed of the reticle 212 and the semiconductor substrate 214 constant, the exposure amount unevenness on the semiconductor substrate is suppressed to the minimum.

[0008]

However, in the scanning projection exposure apparatus, a pulse light source that emits pulsed light such as an excimer laser that emits high-power laser light with a short wavelength is used as a light source for improving throughput or resolution. In the case of using, the amount of light varies for each pulsed light, so that non-negligible exposure amount unevenness occurs on the semiconductor substrate.

According to the present invention, when a plurality of pulsed light from a pulsed light source are exposed while scanning the mask and the photosensitive substrate, the exposure amount on the surface of the photosensitive substrate is made uniform and the entire surface of the photosensitive substrate is covered. An object of the present invention is to provide an illuminating device, a scanning type exposure device, and a device manufacturing method using them, which can transfer a good pattern image.

[0010]

[Means for solving the problem]

(1-1) The illuminating device of the present invention relates to the scanning direction of the pulsed light to be irradiated next, in the illuminating device that sequentially irradiates the surface to be scanned with a large number of pulsed lights according to the intensity of the pulsed light that has been previously irradiated. It is characterized by having an irradiation position changing means for changing the irradiation position.

In particular, (1-1-1) an optical integrator for forming a plurality of secondary light sources by the pulsed light, and an optical system for making light from the plurality of secondary light sources incident on the mask and superimposing them. To have.

(1-1-2) The irradiation position changing means compares the output value of the light intensity detecting means for detecting the intensity of the previously irradiated pulsed light with the reference value,
Control means for controlling the irradiation position of the pulsed light to be irradiated next according to the difference between the output value of the light intensity detection means and the reference value.

(1-1-3) When the output value of the light intensity detecting means is larger than a reference value, the control means displaces the irradiation position of the pulsed light from the reference position in a direction opposite to the scanning direction. When the output value of the light intensity detecting means is smaller than the reference value, the irradiation position of the pulsed light is displaced from the reference position in the scanning direction.

(1-2) The scanning type exposure apparatus of the present invention is a scanning type exposure apparatus which exposes the substrate through the pattern of the mask by scanning the mask and the substrate with respect to the pulsed light that is successively irradiated. The apparatus is characterized in that it has an irradiation position changing means for changing the irradiation position of the next pulsed light in the scanning direction according to the intensity of the pulsed light.

In particular, (1-2-1) the cross-sectional intensity distribution of the pulsed light in the scanning direction is such that the intensity changes relatively smoothly at both ends.

(1-2-2) The cross-sectional intensity distribution of the pulsed light in the scanning direction has an isosceles trapezoidal shape.

(1-2-3) A plurality of light-shielding members that form an opening that defines the cross-sectional shape of the pulsed light is provided, and a side of the plurality of light-shielding members that extends in a direction orthogonal to the scanning direction. A light-shielding member that defines the position is provided at a position deviated from the position conjugate with the mask.

(1-2-4) The light shielding member provided at a position deviated from the position conjugate with the mask is movable in the optical axis direction.

(1-2-5) A projection optical system for forming an image of the pattern of the mask on the substrate is provided.

(1-2-6) An excimer laser for supplying the pulsed light is included.

(1-2-7) An optical integrator for forming a plurality of secondary light sources by the pulsed light, and an optical system for making light from the plurality of secondary light sources incident on the mask and superimposing them on each other. thing.

(1-2-8) The irradiation position changing means is
The light intensity detecting means for detecting the intensity of the pulsed light previously irradiated, and the output value of the light intensity detecting means is compared with a reference value, and the output value of the light intensity detecting means is changed according to the difference between the reference value and the output value. And a control unit that controls the irradiation position of the pulsed light that irradiates.

(1-2-9) When the output value of the light intensity detecting means is larger than the reference value, the control means sets the irradiation position of the pulsed light in a direction opposite to the scanning direction from the reference position. When the output value of the light intensity detecting means is smaller than the reference value, the irradiation position of the pulsed light is displaced from the reference position in the scanning direction.

(1-2-10) The control means comprises a rotating mirror for changing the reflection direction of the pulsed light so that the irradiation position of the pulsed light is changed.

(1-2-11) The control means comprises a rotating parallel plane plate for changing the refraction direction of the pulsed light so that the irradiation position of the pulsed light is changed.

(1-2-12) The control means comprises an A / O element for changing the diffraction direction of the pulsed light so that the irradiation position of the pulsed light is changed. And so on.

(1-3) The device manufacturing method of the present invention is characterized by including the step of transferring the device pattern of the mask onto the work piece.

[0028]

Embodiment 1 FIG. 1 is a schematic view of the essential portions of Embodiment 1 of the present invention. The figure shows a scanning projection exposure apparatus used when manufacturing semiconductor devices such as ICs and LSIs, liquid crystal devices, imaging devices such as CCDs, and devices such as magnetic heads.

In FIG. 1, a light beam from a light source 1 which emits pulsed light such as an excimer laser is a beam shaping optical system 2.
The light incident surface 3a of the optical integrator 3 that is shaped into a desired beam shape by the
Be oriented to. The optical integrator 3 is configured by arranging a plurality of minute lenses two-dimensionally at a predetermined pitch, and forms a plurality of secondary light sources near the light emitting surface 3b. 4 is a condenser lens. The condenser lens 4 is a masking blade 6 having a plurality of movable blades (light-shielding members) formed by light beams from the respective secondary light sources formed in the vicinity of the light emitting surface 3b of the optical integrator 3.
The Koehler lighting. The masking blade 6 forms a slit-shaped opening at the opposite edges of the four movable blades.

A collimator lens 7 collects the light flux that has passed through the masking blade 6. Reference numeral 8 is a mirror, and 9 is a relay lens, which collects the light flux reflected by the mirror 8 and irradiates the surface of the reticle (mask) 10 with light, and forms a slit-shaped illumination area on it. A projection optical system 11 projects a pattern on the surface of the reticle 10 on a wafer 12 as a semiconductor substrate in a reduced scale.

In this embodiment, the masking blade 6
The reticle 10 and the reticle 10 are substantially conjugate with each other by an optical system including a collimator lens 7, a mirror 8 and a relay lens 9. In addition, the exit surface 3b of the optical integrator 3
The vicinity (secondary light source surface) and the reflecting surface of the mirror 8 are substantially conjugate with each other by the optical system including the condenser lens 4 and the collimator lens 7, and the reflecting surface of the mirror 8 and the projection optical system 11
The pupil plane 16 is formed in a substantially conjugate relationship by the optical system including the relay lens 9 and the front lens group of the optical system 11.

In this embodiment, each element 2, 3, 4, 6,
7 and 9 form an element of the illumination system.

Reference numeral 101 denotes a movement control system, which is the reticle 10.
The semiconductor substrate 12 is moved in the direction of the arrow by a driving device (not shown) at the same ratio as the magnification of the projection optical system 11 and at a constant speed. Reference numeral 15 is a light amount detector, which is a light amount detector 1
5 detects a part of the light flux of the pulsed light from the condenser lens 4 split by the half mirror 5 and monitors the light intensity of the pulsed light from the light source 1, thereby indirectly from the light source 1 to the semiconductor substrate 12. The exposure amount of each pulsed light is monitored.

Reference numeral 102 denotes a light quantity calculation unit, which is a light quantity detector 1
The amount of light emitted from the light source 1 is obtained from the signal corresponding to the amount of pulsed light from the light source 5. 103 is a control system.
The control system 103 calculates the position (movement amount) of the illumination area on the reticle (mask) at the time of the next pulse emission based on the calculated light amount from the light amount calculation unit 102, and controls the position (movement amount) by the mirror angle. It is transmitted to the unit 14, the mirror angle movement amount is calculated there, and the mirror drive unit 13 rotates the mirror 8 in the plane of incidence of the pulsed light. Mirror 8
Vibrates at about 500 Hz. The position of the mirror 8 corresponds to the vicinity of the pupil position of the illumination system.

In this embodiment, the emission direction of the light beam from the pupil plane of the illumination system is changed by changing the angle of the mirror 8. That is, the mirror 8 is driven so that the illumination area moves in parallel in the scanning direction on the reticle 10 (mask).
The above-mentioned elements 15, 102, 103, 14, and 13 constitute one element of the control means.

FIG. 2 shows a state in which the reticle 10 moves in the direction shown by an arrow Sa perpendicular to the illumination light beam 104 during exposure in this embodiment. In the same figure, the reticle 10 moves in the direction of the arrow Sa in FIG. 2, whereby the slit-shaped illumination area 105 scans the reticle 10 for exposure.

FIG. 3 is a schematic view of the reticle 10 of FIG. 2 seen from the illumination direction (directly above). A point a on the reticle 10 moves across the illumination area 105 as the reticle 10 moves (a → a ₁ → a ₂ ) The situation is shown. Point a exposure of the point a is started when the came to the position of the point a _1, the exposure of the point a is completed when the point a has come to the position of the point a _2.

FIGS. 4 to 7 show a state in which the integrated exposure amount increases as the reticle 10 moves at a certain point (here, point a) on the reticle 10. Here, E ₀ is the target value of the integrated exposure amount. T ₁ is when the point a comes to the position of the point a ₁ (when entering the illumination range = exposure start), and T ₂ is when the point a comes to the position of the point a ₂ (when leaving the illumination range = exposure end) ) Is represented.

When a continuous light source such as a mercury lamp is used as the exposure light source, the exposure amount increases continuously from the start of exposure to the end of exposure as shown in FIG. Therefore, if the scanning speed, the energy irradiation amount per unit time, and the irradiation slit width are determined in advance and exposure is performed while keeping them constant, exposure unevenness does not occur and the exposure amount can be accurately controlled.

Even when pulsed light is used as the exposure light as in the present invention, if the irradiation energy per pulse is always constant, exposure unevenness occurs as in the continuous emission light source as shown in FIG. Therefore, it is possible to accurately control the exposure amount.

However, although a pulsed light source such as an excimer laser can keep the oscillation frequency constant, it is difficult to make the energy of each pulsed light accurately constant. Therefore, if exposure is performed under the conditions (energy setting, irradiation slit width setting, reticle scan speed setting, oscillation frequency setting) calculated from the average energy (irradiation light amount) per pulse, due to variations and deviations in the energy of each pulsed light, For example, as shown in FIG. 6, accurate control of the exposure amount becomes difficult. In the case of scanning type exposure equipment,
This causes unevenness of the exposure amount on the semiconductor substrate.

FIG. 7 is an explanatory view showing a method of controlling the exposure amount of the present invention.

In this embodiment, the exposure amount of each pulsed light is monitored while the scanning speed of the reticle 10 and the semiconductor substrate 12 is kept constant and the pulse interval of the light emission from the light source is kept constant. When the exposure amount of a certain pulsed light is larger than the desired exposure amount, the position of the illumination area is displaced in the next pulse emission from the position in the previous pulse emission in the direction opposite to the scanning movement direction of the reticle 10. As a result, the exposure time for the point a is relatively reduced.

On the contrary, when the exposure amount of a certain pulse light is smaller than the desired exposure amount, the position of the illumination area is displaced in the scanning movement direction of the reticle 10 from the position of the previous pulse emission in the next pulse emission. Thus, the exposure time for the point a is relatively increased.

Now, let the exposure amount of the i-th pulse emission in FIG. 7 be Δei, and let the target exposure amount per pulse be Δe.
Then, the exposure amount error δei of the i-th light emission is δei = Δei−Δe (1)

Therefore, in order to absorb the exposure amount error δei in the i + 1th light emission, the position of the i + 1th illumination region with respect to the position of the ith illumination region is Δxi + 1 = δei / Δe · Δxi. It is sufficient to move only (2) (here, a positive sign in the formula (2) advances the illumination area in the moving direction of the reticle stage, and a negative sign delays the illumination area in the opposite direction to the moving direction of the reticle stage. Indicates). That is, the positional relationship of the illumination area at the point a on the reticle 10 during each pulse emission is unequal intervals Δx1, Δx2, ... As shown in FIG.

If the focal length of the relay lens 9 is f and the angle change amount of the mirror 8 is Δθi + 1, then f · Tan (2 · Δθi + 1) = Δxi + 1 (3) From the expressions (2) and (3), the angle change amount of the mirror 8 is Δθi + 1 = 1/2 · Tan ⁻¹ (Δx · δei / (Δe · f)) (4).

Therefore, i obtained by the light quantity calculation unit 102
The mirror angle change amount (Δθi + 1) is calculated from the exposure amount error δei of the second pulse by using the equation (4), and the mirror angle drive unit 13 moves the mirror 8 by Δθi + 1. As a result, a desired illumination area is moved on the reticle 10, and the exposure amount is controlled as described above.

In the present embodiment, by performing this control for each pulsed light, as shown in FIG. 7, variations in the amount of light for each pulsed light are made, as compared with the case where the movement control of the illumination area shown in FIG. 6 is not performed. Therefore, uneven exposure is reduced.

On the other hand, the mirror angle drive unit 13 shown in FIG.
When moving this illumination area for each pulse by,
High-speed control as high as the oscillation frequency of the pulse light source 1 (about 500 Hz) is required.

In the present embodiment, control is performed using, for example, a galvanometer mirror or the like.

Further, in the present invention, the method of controlling the exposure amount by controlling the position of the illumination area at the time of the current pulse emission for the error of the previous pulse emission amount can move the reticle 10 and the semiconductor substrate 12 at a constant speed. Moreover, since the pulse light source can emit light at equal intervals, the movement control and movement performance of the reticle 10 and the semiconductor substrate 12 can be made easy and high performance, and the oscillation control and oscillation performance of the pulse light source can be facilitated. It can be made high performance.

When the number of pulsed light used for exposure is large (for example, several hundreds of pulses or more), it is not necessary to pay particular attention to the illuminance distribution (light intensity distribution) of the pulsed light on the reticle 10 in the scanning direction of the reticle 10. Absent. For example, the light intensity distribution may be a completely uniform distribution as shown in FIG. However, when the number of pulsed lights used for exposure is small, in order to eliminate the digital error due to the number of pulses, illumination is performed with the light intensity distribution in the boundary region between the irradiation part and the non-irradiation part gently changed as shown in FIG. Is preferable, which enables accurate control of the exposure amount.

For example, as shown in FIG. 10A, if the light intensity distribution of the pulsed light in the scanning direction is trapezoidal, the timing of pulse oscillation of the pulsed lights P1, P2, ... Even if the position is slightly deviated, it is possible to reduce variations in the exposure amount in the scanning direction as shown in FIG. Note that FIG. 10 shows a case where exposure is sequentially performed with one pulse light for simplicity.

The boundary area (Δx in FIG. 8) between the irradiated portion and the non-irradiated portion of the illuminance distribution in the scanning direction on the reticle 10 is Δx = M × (reticle average moving distance per pulse), (M is a natural number ), And a symmetrical trapezoid as shown in FIG. 8 is desirable, but a shape close to this is acceptable.

For example, after a uniform illuminance distribution is created on the reticle surface in FIG. 1, at least one movable blade (an edge orthogonal to the scanning direction is defined as an edge perpendicular to the scanning direction) among a plurality of movable blades constituting the masking blade 6 in FIG. It is also possible to move the blade (having a blade) in the optical axis direction to slightly defocus the image of the edge of the movable blade on the reticle 10 so that the reticle 10 blurs the illumination area corresponding to the variable slit. According to this, the light intensity distribution can be smoothly changed only in the illumination area in the scanning direction.

In this embodiment, the masking blade 6
Is composed of two pairs of movable blades whose edges are orthogonal,
The images of the edges of the two blades in the direction that determines the width of the illumination area in the scanning direction can be defocused so that the amount of Δx can be set freely.

FIG. 11 is a schematic view of the essential portions of Embodiment 2 of the present invention. In this embodiment, the mirror 8 is fixed as compared with the first embodiment in FIG. 1, and instead, an AO element 1001 is provided between the mirror 8 and the relay lens 9, and the AO element 1001 is driven by the control unit 1002. The difference is that the position of the irradiation region on the surface of the reticle 10 (the position of the center in the scanning direction) is changed by changing the emission angle of the incident light beam, and the other configurations are the same.

In the present embodiment, the AO element 1001 is drive-controlled at, for example, about 500 Hz to adjust the position of the illumination area in the scanning direction.

FIG. 12 is a schematic view of the essential portions of Embodiment 3 of the present invention. In this embodiment, the mirror 8 is fixed as compared with the first embodiment in FIG. 1, and instead, a plane parallel plate 1101 is provided between the reticle 10 and the relay lens 9, and the plane parallel plate 110 is provided.
1 is tilted by the drive unit 1102, the incident light flux is translated and emitted, and the position of the illumination area on the surface of the reticle 10 is changed, and other configurations are the same. is there.

Next, an embodiment of a device manufacturing method using the above-mentioned projection exposure apparatus will be described.

FIG. 13 is a flow chart for manufacturing a semiconductor device (semiconductor chip such as IC or LSI, or liquid crystal panel, CCD or the like).

Step 1 (circuit design) in this embodiment
Then, the circuit of the semiconductor device is designed. Step two
In (mask manufacturing), a mask having the designed circuit pattern is manufactured.

On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip by using the wafer manufactured in step 4, an assembly process (dicing, bonding), a packaging process (chip encapsulation). Etc. are included.

In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 14 is a detailed flowchart of the wafer process in step 4 above. First, in step 11 (oxidation), the surface of the wafer is oxidized. Step 12 (C
In VD), an insulating film is formed on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the above-described exposure apparatus.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist are scraped off. In step 19 (resist peeling), the resist that has become unnecessary due to etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, a highly integrated device can be easily manufactured.

[0071]

According to the present invention, by setting each element as described above, when a plurality of pulsed light from a pulsed light source are exposed while scanning the mask and the photosensitive substrate, the photosensitive substrate surface is exposed. It is possible to achieve an illuminating device, a scanning exposure device, and a device manufacturing method using the same, which can make a uniform exposure amount to the photosensitive substrate surface and can transfer a good pattern image over the entire area of the photosensitive substrate surface.

[Brief description of drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing an illumination area and a reticle.

FIG. 3 is an explanatory diagram showing a state in which points on the reticle move in the illumination area.

FIG. 4 is an explanatory diagram showing a state in which the exposure amount is accumulated in a normal device.

FIG. 5 is an explanatory diagram showing a state in which the exposure amount by pulsed light having a constant light amount is accumulated.

FIG. 6 is an explanatory diagram showing a state in which the exposure amount is accurately integrated.

7 is an explanatory diagram showing a state in which the exposure amount is accumulated in the apparatus of FIG.

FIG. 8 is an explanatory diagram showing a light intensity distribution in a scanning direction of an illumination area of pulsed light.

FIG. 9 is an explanatory diagram showing an illuminance distribution in the scanning direction of an illumination area of pulsed light.

FIG. 10 is an explanatory diagram showing variations in the exposure amount of the illumination area in the scanning direction.

FIG. 11 is a schematic view of the essential portions of Embodiment 2 of the present invention.

FIG. 12 is a schematic view of the essential portions of Embodiment 3 of the present invention.

FIG. 13 is a flowchart of a device manufacturing method of the present invention.

FIG. 14 is a flowchart of a device manufacturing method of the present invention.

FIG. 15 is a schematic view of a main part of a conventional scanning type exposure apparatus.

[Explanation of Codes] 1 pulse light source 2 beam shaping optical system 3,206 optical integrator 4,204 condenser lens 5,208 half mirror 6,209 masking blade 7,207 collimator lens 8,211 mirror 9 relay lens 10 reticle (mask ) 11,213 Projection lens 12,214 Semiconductor substrate (wafer) 13 Mirror angle drive unit 14 Mirror angle control unit 15,215 Exposure amount detector 16 Projection lens pupil 101 Stage drive control unit 102,217 Exposure amount calculator 103 Control System 104 Illumination Luminous Flux 105 Illumination Area 201 Light Source 202 Elliptical Mirror 205 Mirror 210 Imaging Lens 212 Reticle 216 Stage Movement Control System 218 Light Source Control Unit 1001 AO Element 1002 AO Element Exit Angle Control Unit 1101 Row flat plate 1102 parallel plate angle drive unit 1103 parallel plate angle control unit

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location G03F 7/20 521

Claims (18)

[Claims] 1. An illumination device for sequentially irradiating a surface to be scanned with a large number of pulsed lights, wherein the irradiation position is changed in accordance with the intensity of the pulsed light emitted first, and the irradiation position in the scanning direction of the pulsed light emitted next is changed. An illuminating device comprising means. 2. A scanning type exposure apparatus that exposes the substrate through a pattern of the mask by scanning the mask and the substrate with respect to the pulsed light that is sequentially emitted, and A scanning type exposure apparatus having an irradiation position changing means for changing an irradiation position of a pulsed light to be irradiated next in accordance with a scanning direction. 3. The scanning exposure apparatus according to claim 2, wherein the cross-sectional intensity distribution of the pulsed light in the scanning direction is a distribution in which the intensity changes relatively smoothly at both ends. 4. The scanning exposure apparatus according to claim 3, wherein the cross-sectional intensity distribution of the pulsed light in the scanning direction is an isosceles trapezoidal shape. 5. A light-shielding member that includes a plurality of light-shielding members that form an opening that defines the cross-sectional shape of the pulsed light, and that defines a side of the opening that extends in a direction orthogonal to the scanning direction. The scanning exposure apparatus according to claim 3, wherein the scanning exposure apparatus is provided at a position deviated from a position conjugate with the mask. 6. The scanning type exposure apparatus according to claim 5, wherein the light shielding member provided at a position deviated from a position conjugate with the mask is movable in the optical axis direction. 7. The scanning exposure apparatus according to claim 2, further comprising a projection optical system that forms an image of the pattern of the mask on the substrate. 8. The scanning exposure apparatus according to claim 2, further comprising an excimer laser that supplies the pulsed light. 9. An optical integrator that forms a plurality of secondary light sources by the pulsed light, and an optical system that makes light from the plurality of secondary light sources incident on the mask and superimposes them. The scanning exposure apparatus according to claim 2. 10. The irradiation position changing means compares the output value of the light intensity detecting means for detecting the intensity of the pulsed light previously emitted with a reference value with the light intensity detecting means. 10. The scanning type exposure apparatus according to claim 2, further comprising control means for controlling the irradiation position of the pulsed light to be irradiated next according to the difference between the output value and the reference value. 11. The control means, when the output value of the light intensity detection means is larger than a reference value, displaces the irradiation position of the pulsed light from the reference position in a direction opposite to the scanning direction, 11. The scanning exposure apparatus according to claim 10, wherein the irradiation position of the pulsed light is displaced from the reference position in the scanning direction when the output value of the intensity detecting means is smaller than the reference value. 12. The scanning exposure apparatus according to claim 11, wherein the control means includes a rotating mirror that changes a reflection direction of the pulsed light so that an irradiation position of the pulsed light is changed. 13. The scanning exposure apparatus according to claim 11, wherein the control means includes a rotating parallel flat plate that changes a refraction direction of the pulsed light so that an irradiation position of the pulsed light is changed. 14. The control means changes the diffraction direction of the pulsed light so that the irradiation position of the pulsed light changes.
The scanning exposure apparatus according to claim 11, further comprising an / O element. 15. A device manufacturing method comprising a step of transferring a device pattern of a mask onto a work piece by using the scanning type exposure apparatus according to claim 2. 16. An optical integrator that forms a plurality of secondary light sources by the pulsed light, and an optical system that makes light from the plurality of secondary light sources incident on the mask and superimposes them. The lighting device according to claim 1. 17. The irradiation position changing means compares the output value of the light intensity detecting means for detecting the intensity of the pulsed light previously emitted with the reference value with the output value of the light intensity detecting means. The illumination device according to claim 1, further comprising a control unit that controls an irradiation position of pulsed light to be emitted next according to a difference between the output value and the reference value. 18. The light intensity control means displaces the irradiation position of the pulsed light in a direction opposite to the scanning direction from the reference position when the output value of the light intensity detection device is larger than a reference value. 19. The illumination device according to claim 18, wherein the irradiation position of the pulsed light is displaced from the reference position in the scanning direction when the output value of the detection means is smaller than the reference value.