JPH07280653A - Infrared detector - Google Patents

Infrared detector

Info

Publication number
JPH07280653A
JPH07280653A JP9814794A JP9814794A JPH07280653A JP H07280653 A JPH07280653 A JP H07280653A JP 9814794 A JP9814794 A JP 9814794A JP 9814794 A JP9814794 A JP 9814794A JP H07280653 A JPH07280653 A JP H07280653A
Authority
JP
Japan
Prior art keywords
optical filter
case
bonding material
conductive
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9814794A
Other languages
Japanese (ja)
Inventor
Kenichi Goto
賢一 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daishinku Corp
Original Assignee
Daishinku Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daishinku Corp filed Critical Daishinku Corp
Priority to JP9814794A priority Critical patent/JPH07280653A/en
Publication of JPH07280653A publication Critical patent/JPH07280653A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a more reliable infrared detector with a higher manufacturing efficiency while enhancing the electromagnetic shielding effect of the case. CONSTITUTION:The infrared detector comprises an infrared detector element 9, a metallic case 2 therefor having a window 21 passing the infrared rays, and an optical filter 4 transmitting the infrared rays. The optical filter 4 comprises a semiconductor substrate coated, on the opposite major surfaces thereof, with an optical filter film transmitting an infrared ray of desired wavelength. The optical filter film is at least partially stripped from a part where the optical filter 4 is joined to the case thus exposing the semiconductor substrate at the thin part. The thin part of the optical filter 4 is then coated with a conductive bonding material and bonded electrically to the case 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、非接触温度検知および
人体検知等に利用される特に焦電素子を用いた赤外線検
知器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector, particularly a pyroelectric element, which is used for non-contact temperature detection and human body detection.

【0002】[0002]

【従来技術】従来の焦電型赤外線検出器の構造を図面と
ともに説明する。図9、図10に示すように、複数のリ
ード端子31,32はベース1の透孔にガラスを介して
気密かつ絶縁して封着されている。そして、前記ベース
1の上部にはプリント配線された絶縁基板5が設置さ
れ、その表裏面にはFET6、抵抗7等の回路部品並び
に金属柱等からなる支持体8A,8Bが搭載されてい
る。そして、受光電極10A,10B、裏面電極12
A,12B、前記受光電極10A,10Bの連結電極1
1が形成された焦電性を有するセラミック基板である焦
電素子9はその焦電素子の両端部で前記支持体上に導電
性接合材で固着される。以上の構成要素を封止する金属
性のキャップ2はその上部に窓21が設けられ、赤外線
を透過する光学フィルタ4が設置される。この光学フィ
ルタ4は、例えばシリコン等などからなる半導体基板4
1の両主面に所望の波長の赤外線を透過する光学フィル
タ膜42が形成されたものである。そして回路基板上の
他の電子部品から発せられる電磁ノイズはこれら光学フ
ィルタ4でも吸収されるため、これら電磁ノイズ対策と
して前記光学フィルタ4の切断面で半導体基板41の露
出部分41aと、あるいは光学フィルタ4の光学フィル
タ膜42のうちキャップ2との接合部分を削って半導体
基板41を露出させた部分41b,41cと、前記キャ
ップ2とを導電性接合材13により電気的接続を施した
後、その上部に接合材14により機械的接合を施して前
記キャップ2の窓21に取り付ける。そして前記キャッ
プ2をベース1にかぶせて気密封止する。
2. Description of the Related Art The structure of a conventional pyroelectric infrared detector will be described with reference to the drawings. As shown in FIGS. 9 and 10, the plurality of lead terminals 31 and 32 are hermetically and insulatively sealed to the through holes of the base 1 via glass. A printed wiring insulating substrate 5 is installed on the base 1, and circuit components such as the FET 6 and the resistor 7 and supports 8A and 8B made of metal columns are mounted on the front and back surfaces of the insulating substrate 5. Then, the light receiving electrodes 10A and 10B, the back surface electrode 12
A, 12B, connecting electrode 1 of the light receiving electrodes 10A, 10B
The pyroelectric element 9, which is a ceramic substrate having pyroelectricity in which 1 is formed, is fixed to the support body by a conductive bonding material at both ends of the pyroelectric element. The metallic cap 2 for sealing the above-described components has a window 21 on its upper part and an optical filter 4 for transmitting infrared rays. The optical filter 4 is, for example, a semiconductor substrate 4 made of silicon or the like.
An optical filter film 42 that transmits infrared rays having a desired wavelength is formed on both main surfaces of No. 1. Electromagnetic noise generated from other electronic components on the circuit board is also absorbed by these optical filters 4. Therefore, as a countermeasure against these electromagnetic noises, the exposed portion 41a of the semiconductor substrate 41 or the optical filter 4 at the cut surface of the optical filter 4 is prevented. After electrically connecting the cap 2 to the portions 41b and 41c of the optical filter film 42 of No. 4 where the semiconductor substrate 41 is exposed by shaving the portion to be joined to the cap 2 with the conductive joining material 13, The upper part is mechanically bonded by the bonding material 14 and attached to the window 21 of the cap 2. Then, the cap 2 is placed on the base 1 to hermetically seal it.

【0003】[0003]

【発明が解決しようとする課題】しかし、導電性接合材
による前記光学フィルタ4の切断面で半導体基板41の
露出部分41aとキャップ2との導通では、接合材と導
電性接合材との塗布状態により露出部分41aとの導電
性にばらつきを生じやすく、完全な導通を確保できない
ことがあった。また、導電性接合材による光学フィルタ
4の光学フィルタ膜42のうちキャップ2との接合部分
を削って半導体基板41を露出させた部分41bおよび
41cの導通では、図10に示すように、光学フィルタ
膜42の削り方にばらつきを生じやすく、完全な導通を
確保できないことがあった。これらの理由により電磁ノ
イズを完全にアースしきれずに素子で検知してしまい誤
動作の原因となっていた。そのため電磁ノイズのシール
ド構造としては信頼性に問題があった。また、工程の簡
素化をはかるために、まず導電性接合材を塗布して硬化
する前に接合材を塗布し、一度に硬化させる手法がある
が、性質の比較的近い接合材と導電性接合材とを用いた
場合、お互いの接合材が分散してしまい、導電性接合材
の導電性が低下し、光学フィルタとキャップとの導通が
十分に確保できなくなることがあった。そのため前述略
同様に、電磁ノイズを完全にアースしきれずに素子で検
知してしまい誤動作の原因となっていた。そのため電磁
ノイズのシールド構造としては信頼性に問題があった。
However, in the conduction between the exposed portion 41a of the semiconductor substrate 41 and the cap 2 on the cut surface of the optical filter 4 formed by the conductive bonding material, the coating state of the bonding material and the conductive bonding material is used. Due to this, the conductivity with the exposed portion 41a is likely to vary, and perfect conduction may not be ensured. In addition, in the conduction of the portions 41b and 41c of the optical filter film 42 of the optical filter 4 made of a conductive bonding material, in which the bonding portion with the cap 2 is shaved to expose the semiconductor substrate 41, as shown in FIG. In some cases, the method of shaving the film 42 was liable to vary, and perfect conduction could not be ensured. For these reasons, electromagnetic noise cannot be completely grounded and is detected by the element, causing malfunction. Therefore, there is a problem in reliability as a shield structure for electromagnetic noise. In order to simplify the process, there is a method of applying the conductive bonding material first and then hardening the conductive bonding material before hardening. When the material and the material are used, the respective bonding materials may be dispersed, the conductivity of the conductive bonding material may be reduced, and it may not be possible to sufficiently secure conduction between the optical filter and the cap. Therefore, similarly to the above-described case, the electromagnetic noise cannot be completely grounded and is detected by the element, which causes a malfunction. Therefore, there is a problem in reliability as a shield structure for electromagnetic noise.

【0004】本発明は、ケースの電磁シールド効果が向
上したより信頼性の高い、しかも製造効率の高い赤外線
検出器を提供することを目的とする。
An object of the present invention is to provide a more reliable infrared detector having an improved electromagnetic shielding effect of the case and having high manufacturing efficiency.

【0005】[0005]

【課題を解決するための手段】そのため、本発明の赤外
線検出器は、赤外線を検出する素子があり、前記素子を
収納する金属性のケースには赤外線を通過する窓を設
け、この窓に赤外線を透過する光学フィルタを設置して
なる赤外線検出器において、前記光学フィルタは半導体
基板からなりその少なくとも両主面は所望の波長の赤外
線を透過する光学フィルタ膜が施されており、前記光学
フィルタのケース接合部分は少なくとも一部分の光学フ
ィルタ膜を削り、前記半導体基板が露出するように薄肉
形状に形成するとともに前記光学フィルタの薄肉部分に
おいて導電性接合材を塗布し、前記ケースとの電気的接
合を施した。
Therefore, the infrared detector of the present invention has an element for detecting infrared rays, and a metallic case for accommodating the element is provided with a window through which infrared rays pass, and the infrared ray is provided in this window. In an infrared detector provided with an optical filter that transmits light, the optical filter is made of a semiconductor substrate and at least both main surfaces thereof are provided with an optical filter film that transmits infrared light of a desired wavelength. At least a part of the case bonding portion is shaved off to form the thin film shape so that the semiconductor substrate is exposed, and a conductive bonding material is applied to the thin portion of the optical filter to electrically bond the case. gave.

【0006】また、赤外線を検出する素子があり、前記
素子を収納する金属性のケースには赤外線を通過する窓
を設け、この窓に赤外線を透過する光学フィルタを設置
してなる赤外線検出器において、前記光学フィルタは半
導体基板からなりその少なくとも両主面は所望の波長の
赤外線を透過する光学フィルタ膜が施されており、前記
光学フィルタのケース接合部分は少なくとも一部分の光
学フィルタ膜を削り、前記半導体基板が露出するように
溝を形成するとともに前記光学フィルタの溝において導
電性接合材を塗布し、前記ケースとの電気的接合を施し
た。
In addition, in an infrared detector having an element for detecting infrared rays, a metal case for accommodating the element is provided with a window for passing infrared rays, and an optical filter for transmitting infrared rays is installed in the window. The optical filter is composed of a semiconductor substrate, at least both main surfaces of which are provided with an optical filter film that transmits infrared rays having a desired wavelength, and a case joint portion of the optical filter is formed by cutting at least a part of the optical filter film, A groove was formed so that the semiconductor substrate was exposed, and a conductive bonding material was applied to the groove of the optical filter to electrically bond it to the case.

【0007】また、前記光学フィルタの薄肉部分と接合
するケースの接合部分は、前記光学フィルタの薄肉部分
もしくは溝と、はめあう厚肉部分を形成した。
Further, the joining portion of the case joined to the thin portion of the optical filter is formed with a thick portion that fits in the thin portion or groove of the optical filter.

【0008】[0008]

【作用】光学フィルタのケース接合部分は少なくとも一
部分の光学フィルタ膜(絶縁性)を削り、半導体基板
(導電性)が露出するように薄肉形状に形成するととも
に、前記光学フィルタの薄肉部分において導電性接合材
を塗布したことにより、前記光学フィルタの薄肉部分に
導電性接合材のみが溜まり光学フィルタのケース接合側
主面に半導体基板との導通部が形成される。そしてこの
導通部により、ケースと前記ケースに接合された光学フ
ィルタとが確実に電気的に接合される。そのため、ケー
スの電磁シールド効果が向上する。
The case joint portion of the optical filter is formed in a thin shape so as to expose at least a part of the optical filter film (insulating property) so as to expose the semiconductor substrate (conductivity), and the conductive part is formed in the thin portion of the optical filter. By applying the bonding material, only the conductive bonding material is accumulated in the thin portion of the optical filter, and the conductive portion with the semiconductor substrate is formed on the case bonding side main surface of the optical filter. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case. Therefore, the electromagnetic shield effect of the case is improved.

【0009】また、光学フィルタのケース接合部分は少
なくとも一部分の光学フィルタ膜(絶縁性)を削り、半
導体基板(導電性)が露出するように溝を形成するとと
もに、前記光学フィルタの溝において導電性接合材を塗
布したことにより、前記光学フィルタの溝に導電性接合
材のみが溜まり光学フィルタのケース接合側主面に半導
体基板との導通部が形成される。そしてこの導通部によ
り、ケースと前記ケースに接合された光学フィルタとが
確実に電気的に接合される。そのため、ケースの電磁シ
ールド効果が向上する。また、前記導通部の周囲は光学
フィルタ自体により保護されているため、導通部に溜ま
った導電性接合材は外部影響(接合材や空気中の水分
等)を受けない。
In addition, at least a part of the optical filter film (insulating property) is shaved in the case joining portion of the optical filter to form a groove so that the semiconductor substrate (conductive property) is exposed, and in the groove of the optical filter, the conductive property is provided. By applying the bonding material, only the conductive bonding material is accumulated in the groove of the optical filter, and the conductive portion with the semiconductor substrate is formed on the case bonding side main surface of the optical filter. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case. Therefore, the electromagnetic shield effect of the case is improved. Further, since the periphery of the conductive portion is protected by the optical filter itself, the conductive bonding material accumulated in the conductive portion is not affected by external influences (bonding material, moisture in air, etc.).

【0010】また、光学フィルタの薄肉部分と接合する
ケースの接合部分は、光学フィルタの薄肉部分もしくは
溝と、はめあう厚肉部分を形成したことにより、前記ケ
ースに光学フィルタを取り付ける際にずれがなく位置精
度が向上するとともに、接合強度が向上する。そして、
ケースの厚肉部分(導電性)が光学フィルタの半導体基
板と接触し、前記光学フィルタの薄肉部分もしくは溝と
ケースの厚肉部分との間に導電性接合材が溜まり光学フ
ィルタのケース接合側主面に半導体基板との導通部が形
成される。そしてこの導通部により、ケースと前記ケー
スに接合された光学フィルタとが確実に電気的に接合さ
れる。そのため、ケースの電磁シールド効果がより一層
向上する。また、前記導通部の周囲は光学フィルタ自体
により保護されているため、導通部に溜まった導電性接
合材は外部影響(接合材や空気中の水分等)を受けな
い。
Further, since the thin-walled portion of the optical filter is joined to the thin-walled portion of the case, the thin-walled portion or groove of the optical filter is fitted to the thick-walled portion so that when the optical filter is attached to the case, there is a deviation. The positional accuracy is improved and the bonding strength is improved. And
The thick-walled portion (conductive) of the case contacts the semiconductor substrate of the optical filter, and the conductive bonding material accumulates between the thin-walled portion or groove of the optical filter and the thick-walled portion of the case. A conductive portion with the semiconductor substrate is formed on the surface. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case. Therefore, the electromagnetic shield effect of the case is further improved. Further, since the periphery of the conductive portion is protected by the optical filter itself, the conductive bonding material accumulated in the conductive portion is not affected by external influences (bonding material, moisture in air, etc.).

【0011】[0011]

【実施例】次に、本発明の第1の実施例について、図面
を参照にして説明する。図1は本発明の第1の実施例を
示す斜視図正面図、図2は図1のキャップを拡大した正
面図を示す。なお従来と同様の部分については同番号を
付した。焦電素子9はチタン酸鉛系の焦電性を有するセ
ラミックからなり、板厚方向に分極処理されていて、か
つ矩形形状に切断加工されている。この焦電素子9は一
般的に二素子型と呼ばれるもので次のような電極構成で
ある。つまり、表面には、所定の間隔に蒸着等の手段に
より、受光用の金属膜電極(CrあるいはNi−Cr
等)10A,10Bが設けられており、裏面においては
金属膜電極(Ag等)12A,12Bが設けられてい
る。なお、受光用の電極10A,10Bは連結電極(C
rあるいはNi−Cr等)11で共通接続されている。
そして、ベース1は金属からなり、上部にプリント配線
された絶縁基板5を設置し、その表裏面に外部回路を構
成するFET6、抵抗等の電子部品7並びに支持体81
A,81Bを搭載し、この支持体81A,81Bの上部
には導電性接合材によって焦電素子9が搭載されてい
る。また、ベース1は電気的に独立して設けられた複数
のリード端子31,32を有し、ベース1の透孔にガラ
スを介して気密かつ絶縁して封着されている。これらの
構成要素を封止する金属性のキャップ2はその上部に窓
21が設けられ、赤外線を透過する光学フィルタ4が設
置される。この光学フィルタ4は、例えばシリコン、ゲ
ルマニウム等などからなる半導体基板41の両主面に特
定波長領域の赤外線のみを透過させる光学フィルタ膜4
2が形成されたものである。これは前記焦電素子9は感
度に波長依存性がないため、所望の波長領域をあらかじ
め選択しておく必要があるためである。そして回路基板
上の他の電子部品から発せられる電磁ノイズはこれら光
学フィルタ4でも吸収されるため、これら電磁ノイズ対
策を施す必要がある。つまり、前記光学フィルタ4のキ
ャップ接合部分4aに薄肉部としての溝41d,41e
を設け、前記キャップ接合部分4aに導電接合材13
(エポキシ樹脂に銀、銅、金等のフィラー(粉)を混ぜ
たもの)を塗布した後、導電性接合材13が硬化する前
に、その上部に接合材14(例えばエポキシ樹脂)を塗
布し、一度に前記2種類の接合材を硬化させて接合を施
した。このため、前記光学フィルタ4の溝41d,41
eに導電性接合材13のみが溜まり半導体基板41との
導通部13aが形成されて、キャップ2と前記キャップ
に接合された光学フィルタ4とが確実に電気的に接合さ
れる。そして前記キャップ2をベース1にかぶせて気密
封止する。
Next, a first embodiment of the present invention will be described with reference to the drawings. 1 is a perspective front view showing a first embodiment of the present invention, and FIG. 2 is an enlarged front view of the cap shown in FIG. It should be noted that the same numbers are assigned to the same parts as the conventional ones. The pyroelectric element 9 is made of lead titanate-based pyroelectric ceramic, is polarized in the plate thickness direction, and is cut into a rectangular shape. The pyroelectric element 9 is generally called a two-element type and has the following electrode structure. That is, a metal film electrode (Cr or Ni-Cr) for light reception is formed on the surface by means such as vapor deposition at predetermined intervals.
Etc.) 10A, 10B are provided, and metal film electrodes (Ag etc.) 12A, 12B are provided on the back surface. The electrodes 10A and 10B for receiving light are connected electrodes (C
r or Ni-Cr or the like) 11.
The base 1 is made of metal, and an insulating substrate 5 having a printed wiring is installed on the top of the base 1, and FETs 6 constituting an external circuit, electronic components 7 such as resistors, and a support 81 are provided on the front and back surfaces thereof.
A and 81B are mounted, and the pyroelectric element 9 is mounted on the upper portions of the supports 81A and 81B by a conductive bonding material. In addition, the base 1 has a plurality of lead terminals 31 and 32 that are electrically independent of each other, and is hermetically and electrically insulated and sealed in the through hole of the base 1 via glass. The metallic cap 2 for sealing these components is provided with the window 21 on its upper part, and the optical filter 4 for transmitting infrared rays is installed. This optical filter 4 is an optical filter film 4 that transmits only infrared rays in a specific wavelength range to both main surfaces of a semiconductor substrate 41 made of, for example, silicon, germanium or the like.
2 is formed. This is because the sensitivity of the pyroelectric element 9 does not depend on wavelength, and it is necessary to select a desired wavelength region in advance. Electromagnetic noise generated from other electronic components on the circuit board is also absorbed by these optical filters 4, so it is necessary to take measures against these electromagnetic noises. That is, the grooves 41d and 41e as thin portions are formed in the cap joint portion 4a of the optical filter 4.
And a conductive bonding material 13 is provided on the cap bonding portion 4a.
After applying the epoxy resin mixed with a filler (powder) such as silver, copper, or gold, the bonding material 14 (for example, epoxy resin) is applied on top of the conductive bonding material 13 before the conductive bonding material 13 is cured. Then, the two types of bonding materials were cured at once to bond them. Therefore, the grooves 41d, 41 of the optical filter 4 are
Only the conductive bonding material 13 is accumulated in e to form the conductive portion 13a with the semiconductor substrate 41, so that the cap 2 and the optical filter 4 bonded to the cap are reliably electrically bonded. Then, the cap 2 is placed on the base 1 to hermetically seal it.

【0012】次に、本発明の第2の実施例について、図
面を参照にして説明する。図3は本発明の第2の実施例
を示す斜視図正面図、図4は図3のキャップを拡大した
正面図を示す。なお第1の実施例と同様の部分について
は同番号を付した。焦電素子9はチタン酸鉛系の焦電性
を有するセラミックからなり、板厚方向に分極処理され
ていて、かつ矩形形状に切断加工されている。この焦電
素子9は一般的に二素子型と呼ばれるもので次のような
電極構成である。つまり、表面には、所定の間隔に蒸着
等の手段により、受光用の金属膜電極(CrあるいはN
i−Cr等)10A,10Bが設けられており、裏面に
おいては金属膜電極(Ag等)12A,12Bが設けら
れている。なお、受光用の電極10A,10Bは連結電
極(CrあるいはNi−Cr等)11で共通接続されて
いる。そして、ベース1は金属からなり、上部にプリン
ト配線された絶縁基板5を設置し、その表裏面に外部回
路を構成するFET6、抵抗等の電子部品7並びに支持
体81A,81Bを搭載し、この支持体81A,81B
の上部には導電性接合材によって焦電素子9が搭載され
ている。また、ベース1は電気的に独立して設けられた
複数のリード端子31,32を有し、ベース1の透孔に
ガラスを介して気密かつ絶縁して封着されている。これ
らの構成要素を封止する金属性キャップ2はその上部に
窓21と光学フィルタ係止部22,23が設けられ、赤
外線を透過する光学フィルタ4が設置される。この光学
フィルタ4は、例えばシリコン、ゲルマニウム等などか
らなる半導体基板41の両主面に特定波長領域の赤外線
のみを透過させる光学フィルタ膜42( 等からなる)
が形成されたものである。これは前記焦電素子9は感度
に波長依存性がないため、所望の波長領域をあらかじめ
選択しておく必要があるためである。そして回路基板上
の他の電子部品から発せられる電磁ノイズはこれら光学
フィルタ4でも吸収されるため、これら電磁ノイズ対策
を施す必要がある。つまり、前記光学フィルタ4のキャ
ップ接合部分4bに薄肉部としての溝41f,41gを
設け、前記キャップ接合部分4bに導電接合材13(ポ
リイミドに銀、銅、金等のフィラー(粉)を混ぜたも
の)を塗布した後、キャップ2の光学フィルタ係止部2
2,23に光学フィルタ4の溝41f,41gを係止さ
て取り付ける。そして、導電性接合材13が硬化する前
に、その上部に接合材14(ポリイミド)を塗布し、一
度に前記2種類の接合材を硬化させて接合を施した。こ
のため、前記光学フィルタ4の溝41f,41gにキャ
ップ2の光学フィルタ係止部22,23を介して導電性
接合材13のみが溜まり半導体基板との導通部13bが
形成されて、キャップ2と前記キャップに接合された光
学フィルタ4とが確実に電気的に接合される。そして前
記キャップ2をベース1にかぶせて気密封止する。
Next, a second embodiment of the present invention will be described with reference to the drawings. 3 is a front view of a perspective view showing a second embodiment of the present invention, and FIG. 4 is an enlarged front view of the cap of FIG. The same parts as those in the first embodiment are designated by the same reference numerals. The pyroelectric element 9 is made of lead titanate-based pyroelectric ceramic, is polarized in the plate thickness direction, and is cut into a rectangular shape. The pyroelectric element 9 is generally called a two-element type and has the following electrode structure. That is, on the surface, a metal film electrode (Cr or N) for light reception is formed at a predetermined interval by means such as vapor deposition.
i-Cr, etc.) 10A, 10B, and metal film electrodes (Ag, etc.) 12A, 12B are provided on the back surface. The light-receiving electrodes 10A and 10B are commonly connected by a connecting electrode (Cr or Ni—Cr) 11. Then, the base 1 is made of metal, and the insulating substrate 5 having printed wiring is installed on the upper part, and the FET 6 and the electronic components 7 such as resistors and the supports 81A and 81B forming an external circuit are mounted on the front and back surfaces thereof. Supports 81A, 81B
A pyroelectric element 9 is mounted on the upper part of the by a conductive bonding material. In addition, the base 1 has a plurality of lead terminals 31 and 32 that are electrically independent of each other, and is hermetically and electrically insulated and sealed in the through hole of the base 1 via glass. The metallic cap 2 for sealing these components is provided with the window 21 and the optical filter locking portions 22 and 23 on the upper part thereof, and the optical filter 4 which transmits infrared rays is installed. The optical filter 4 is composed of (for example) an optical filter film 42 that transmits only infrared rays in a specific wavelength range to both main surfaces of a semiconductor substrate 41 made of, for example, silicon, germanium or the like.
Are formed. This is because the sensitivity of the pyroelectric element 9 does not depend on wavelength, and it is necessary to select a desired wavelength region in advance. Electromagnetic noise generated from other electronic components on the circuit board is also absorbed by these optical filters 4, so it is necessary to take measures against these electromagnetic noises. That is, the grooves 41f and 41g as thin portions are provided in the cap joint portion 4b of the optical filter 4, and the conductive joint material 13 (polyimide is mixed with filler (powder) such as silver, copper, or gold) in the cap joint portion 4b. Object) and then the optical filter locking portion 2 of the cap 2
The grooves 41f and 41g of the optical filter 4 are locked and attached to 2 and 23. Then, before the conductive bonding material 13 was hardened, the bonding material 14 (polyimide) was applied to the upper part of the conductive bonding material 13, and the two kinds of bonding materials were hardened at once to bond them. Therefore, only the conductive bonding material 13 is accumulated in the grooves 41f and 41g of the optical filter 4 through the optical filter locking portions 22 and 23 of the cap 2 to form the conductive portion 13b with the semiconductor substrate, and the cap 2 The optical filter 4 bonded to the cap is securely electrically bonded. Then, the cap 2 is placed on the base 1 to hermetically seal it.

【0013】尚、第1の実施例および第2の実施例で説
明した光学フィルタの薄肉部として溝41d,41eお
よび溝41f,41gを例示した。これらの溝の平面図
としては図5、図6等が考えられる。しかし、光学フィ
ルタの薄肉部として溝に限られるわけではなく、図7に
示すように凹部411a,411b,411c,411
dを設けた構成であっても良い。また、凹部の数は図示
したものに限らず、電磁ノイズ対策として半導体基板と
の導通部が形成されて、ケースと光学フィルタとが確実
に電気的に接合できる程度(少なくとも1つ以上)であ
ればよい。そして図8に示すように溝と凹部を設けた構
成であっても良い。
The grooves 41d and 41e and the grooves 41f and 41g are illustrated as the thin portions of the optical filters described in the first and second embodiments. 5 and 6 can be considered as plan views of these grooves. However, the thin portion of the optical filter is not limited to the groove, and as shown in FIG. 7, the recessed portions 411a, 411b, 411c, 411 are formed.
A configuration in which d is provided may be used. The number of recesses is not limited to the number shown in the figure, and may be such that a conductive part with the semiconductor substrate is formed as a countermeasure against electromagnetic noise and the case and the optical filter can be reliably electrically joined (at least one or more). Good. Further, as shown in FIG. 8, a configuration in which a groove and a recess are provided may be used.

【0014】[0014]

【発明の効果】本発明の請求項1により、前記光学フィ
ルタの薄肉部分に導電性接合材のみが溜まり光学フィル
タのケース接合側主面に半導体基板との導通部が形成さ
れる。このため前記導通部においては、接合材と導電性
接合材の塗布ばらつきを生じない。また、工程の簡素化
をはかるために、まず導電性接合材を塗布して硬化する
前に接合材を塗布して硬化させる手法があるが、性質の
比較的近い接合材と導電性接合材とを用いた場合、前記
導通部においては、お互いの接合材が分散することがな
い。そしてこの導通部により、ケースと前記ケースに接
合された光学フィルタとが確実に電気的に接合される。
また、これらの接合材はお互いに熱膨張係数が近いた
め、お互いの接合材の界面に対して温度変化時に応力が
かかりにくくなる。そのため、ケースの電磁シールド効
果が向上したより信頼性の高い、しかも環境の影響が及
びにくく製造効率の高い赤外線検出器を提供できる。
According to the first aspect of the present invention, only the conductive bonding material is accumulated in the thin portion of the optical filter, and the conductive portion with the semiconductor substrate is formed on the case bonding side main surface of the optical filter. Therefore, in the conductive portion, there is no variation in application of the bonding material and the conductive bonding material. In order to simplify the process, there is a method of applying and hardening the bonding material before applying and hardening the conductive bonding material. In the case of using, the joining materials do not disperse in the conducting portion. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case.
Moreover, since the thermal expansion coefficients of these bonding materials are close to each other, stress is less likely to be applied to the interface between the bonding materials when the temperature changes. Therefore, it is possible to provide a highly reliable infrared detector in which the electromagnetic shielding effect of the case is improved and which is less affected by the environment and has high manufacturing efficiency.

【0015】本発明の請求項2により、前記光学フィル
タの溝に導電性接合材のみが溜まり光学フィルタのケー
ス接合側主面に半導体基板との導通部が形成される。こ
のため前記導通部においては、接合材と導電性接合材の
塗布ばらつきを生じない。また、工程の簡素化をはかる
ために、まず導電性接合材を塗布して硬化する前に接合
材を塗布して硬化させる手法があるが、性質の比較的近
い接合材と導電性接合材とを用いた場合、前記導通部に
おいては、お互いの接合材が分散することがない。そし
てこの導通部により、ケースと前記ケースに接合された
光学フィルタとが確実に電気的に接合される。また、こ
れらの接合材はお互いに熱膨張係数が近いため、お互い
の接合材の界面に対して温度変化時に応力がかかりにく
くなる。そのため、ケースの電磁シールド効果が向上し
たより信頼性の高い、しかも環境の影響が及びにくく製
造効率の高い赤外線検出器を提供できる。
According to the second aspect of the present invention, only the conductive bonding material is accumulated in the groove of the optical filter, and the conductive portion with the semiconductor substrate is formed on the case bonding side main surface of the optical filter. Therefore, in the conductive portion, there is no variation in application of the bonding material and the conductive bonding material. In order to simplify the process, there is a method of applying and hardening the bonding material before applying and hardening the conductive bonding material. In the case of using, the joining materials do not disperse in the conducting portion. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case. Moreover, since the thermal expansion coefficients of these bonding materials are close to each other, stress is less likely to be applied to the interface between the bonding materials when the temperature changes. Therefore, it is possible to provide a highly reliable infrared detector in which the electromagnetic shielding effect of the case is improved and which is less affected by the environment and has high manufacturing efficiency.

【0016】本発明の請求項3により、前記ケースに光
学フィルタを取り付ける際にずれがなく位置精度が向上
するとともに、接合強度が向上する。そして、前記光学
フィルタの薄肉部分もしくは溝にケースの厚肉部分を介
して導電性接合材のみが溜まり光学フィルタのケース接
合側主面に半導体基板との導通部が形成される。このた
め前記導通部においては、接合材と導電性接合材の塗布
ばらつきを生じない。また、工程の簡素化をはかるため
に、まず導電性接合材を塗布して硬化する前に接合材を
塗布して硬化させる手法があるが、性質の比較的近い接
合材と導電性接合材とを用いても、前記導通部において
は、お互いの接合材が分散することがない。そしてこの
導通部により、ケースと前記ケースに接合された光学フ
ィルタとが確実に電気的に接合される。また、これらの
接合材はお互いに熱膨張係数が近いため、お互いの接合
材の界面に対して温度変化時に応力がかかりにくくな
る。そのため、ケースの電磁シールド効果がより一層向
上したより一層信頼性の高い、しかも環境の影響が及び
にくく製造効率のより一層高い赤外線検出器を提供でき
る。
According to the third aspect of the present invention, when the optical filter is attached to the case, there is no deviation, the positional accuracy is improved, and the bonding strength is improved. Then, only the conductive bonding material is accumulated in the thin portion or groove of the optical filter through the thick portion of the case, and a conductive portion with the semiconductor substrate is formed on the case bonding side main surface of the optical filter. Therefore, in the conductive portion, there is no variation in application of the bonding material and the conductive bonding material. In order to simplify the process, there is a method of applying and hardening the bonding material before applying and hardening the conductive bonding material. Even if the above is used, the bonding materials do not disperse in the conductive portion. Then, the conductive portion surely electrically bonds the case and the optical filter bonded to the case. Moreover, since the thermal expansion coefficients of these bonding materials are close to each other, stress is less likely to be applied to the interface between the bonding materials when the temperature changes. Therefore, it is possible to provide an infrared detector in which the electromagnetic shielding effect of the case is further improved, which is more reliable, is less affected by the environment, and has higher manufacturing efficiency.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す透視正面図であ
る。
FIG. 1 is a perspective front view showing a first embodiment of the present invention.

【図2】図1のキャップを拡大した正面図である。2 is an enlarged front view of the cap of FIG. 1. FIG.

【図3】本発明の第2の実施例を示す透視正面図であ
る。
FIG. 3 is a perspective front view showing a second embodiment of the present invention.

【図4】図3のキャップを拡大した正面図である。FIG. 4 is an enlarged front view of the cap shown in FIG.

【図5】光学フィルタの第1の平面図である。FIG. 5 is a first plan view of the optical filter.

【図6】光学フィルタの第2の平面図である。FIG. 6 is a second plan view of the optical filter.

【図7】光学フィルタの第3の平面図である。FIG. 7 is a third plan view of the optical filter.

【図8】光学フィルタの第4の平面図である。FIG. 8 is a fourth plan view of the optical filter.

【図9】従来の実施例を示す透視正面図である。FIG. 9 is a perspective front view showing a conventional example.

【図10】図9のキャップを拡大した正面図である。FIG. 10 is an enlarged front view of the cap of FIG.

【符号の説明】[Explanation of symbols]

1・・・ベース 2・・・キャップ 31,32・・・リード端子 4・・・光学フィルタ 5・・・絶縁基板 6・・・FET 7・・・抵抗 81A,81B・・・支持体 9・・・焦電素子 10A,10B・・・受光電極 11・・・連結電極 12A,12B・・・裏面電極 13・・・導電性接合材 14・・・接合材 1 ... Base 2 ... Cap 31, 32 ... Lead terminal 4 ... Optical filter 5 ... Insulating substrate 6 ... FET 7 ... Resistor 81A, 81B ... Support 9 ... ..Pyroelectric elements 10A, 10B ... Light receiving electrodes 11 ... Connection electrodes 12A, 12B ... Back surface electrodes 13 ... Conductive bonding material 14 ... Bonding materials

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 赤外線を検出する素子があり、前記素子
を収納する金属性ケースには赤外線を通過する窓を設
け、この窓に赤外線を透過する光学フィルタを設置して
なる赤外線検出器において、前記光学フィルタは半導体
基板からなりその少なくとも両主面は所望の波長の赤外
線を透過する光学フィルタ膜が施されており、前記光学
フィルタのケース接合部分は少なくとも一部分の光学フ
ィルタ膜を削り、前記半導体基板が露出するように薄肉
形状に形成するとともに前記光学フィルタの薄肉部分に
おいて導電性接合材を塗布し、前記ケースとの電気的接
合を施したことを特徴とする赤外線検出器。
1. An infrared detector comprising an element for detecting infrared rays, wherein a metallic case accommodating the element is provided with a window for transmitting infrared rays, and an optical filter for transmitting infrared rays is installed in the window. The optical filter is made of a semiconductor substrate, at least both main surfaces of which are provided with an optical filter film that transmits infrared rays having a desired wavelength, and a case joint portion of the optical filter is formed by cutting at least a part of the optical filter film. An infrared detector characterized in that the substrate is formed in a thin shape so as to be exposed, and a conductive bonding material is applied to a thin portion of the optical filter to electrically bond with the case.
【請求項2】 前記半導体基板が露出する薄肉形状とし
て、溝を設け、かつ、前記溝にて導電性接合材を塗布
し、前記ケースとの電気的接合を施したことを特徴とす
る赤外線検出器。
2. An infrared detecting device, characterized in that a groove is formed as a thin-walled shape to expose the semiconductor substrate, and a conductive bonding material is applied in the groove to electrically bond with the case. vessel.
【請求項3】 前記光学フィルタの薄肉部分と接合する
ケースの接合部分は、前記光学フィルタの薄肉部分と、
はめあう厚肉部分を形成したことを特徴とする特許請求
項1および2記載の赤外線検出器。
3. The joint portion of the case joined to the thin portion of the optical filter is a thin portion of the optical filter,
The infrared detector according to claim 1 or 2, characterized in that a thick portion is formed to be fitted therein.
JP9814794A 1994-04-11 1994-04-11 Infrared detector Pending JPH07280653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9814794A JPH07280653A (en) 1994-04-11 1994-04-11 Infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9814794A JPH07280653A (en) 1994-04-11 1994-04-11 Infrared detector

Publications (1)

Publication Number Publication Date
JPH07280653A true JPH07280653A (en) 1995-10-27

Family

ID=14212082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9814794A Pending JPH07280653A (en) 1994-04-11 1994-04-11 Infrared detector

Country Status (1)

Country Link
JP (1) JPH07280653A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010175341A (en) * 2009-01-28 2010-08-12 Panasonic Electric Works Co Ltd Package of infrared sensor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010175341A (en) * 2009-01-28 2010-08-12 Panasonic Electric Works Co Ltd Package of infrared sensor element

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