JPH0727993A - Optical system with uniformalized light beam - Google Patents
Optical system with uniformalized light beamInfo
- Publication number
- JPH0727993A JPH0727993A JP5167711A JP16771193A JPH0727993A JP H0727993 A JPH0727993 A JP H0727993A JP 5167711 A JP5167711 A JP 5167711A JP 16771193 A JP16771193 A JP 16771193A JP H0727993 A JPH0727993 A JP H0727993A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- optical
- light beam
- optical waveguide
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光ビーム均一化光学系に
関し、方形断面を有する光導波路に光ビームを通すこと
により、光強度の均一化を図る光ビーム均一化光学系に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light beam homogenizing optical system, and more particularly to a light beam homogenizing optical system for homogenizing light intensity by passing a light beam through an optical waveguide having a rectangular cross section.
【０００２】[0002]
【従来の技術】ところで、レーザビームを用いて材料表
面に処理を施すとき、レーザビームの光強度は正規分布
となっているのが一般的である。このため、ビーム中央
部と周辺部では光強度に差があり、レーザビームの中央
部と周辺部とによる処理に差が生じる。2. Description of the Related Art When a material surface is processed with a laser beam, the light intensity of the laser beam generally has a normal distribution. Therefore, there is a difference in light intensity between the central portion and the peripheral portion of the beam, and a difference occurs in processing between the central portion and the peripheral portion of the laser beam.
【０００３】そこで従来、これを解消するのに、図２に
示すような正方形断面を持ち入射する光ビームを多重に
繰り返し反射させて光強度の均一化を行ういわゆるカラ
コイドスコープと呼ばれる光導波路ａを用い、これに球
面レンズｂにより集光されたレーザビームｃを入射さ
せ、光導波路ａから出射したレーザビームｃを球面レン
ズｄにより照射面ｅに結像させるようにしている。Therefore, in order to solve this problem, conventionally, an optical waveguide a called a so-called caracoid scope for uniformizing the light intensity by repeatedly reflecting an incident light beam having a square cross section as shown in FIG. 2 is provided. The laser beam c focused by the spherical lens b is incident on this, and the laser beam c emitted from the optical waveguide a is imaged on the irradiation surface e by the spherical lens d.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記従来のよ
うな正方形断面を持つ光導波路ａと、入射側および出射
側の各球面レンズｂ、ｄとの組み合わせ構造によると、
照射面ｅにレーザビームｃを照射するときの照射スポッ
トの形状が、光導波路ａの横断面形状に相似な正方形に
限定されてしまい、処理不要な部分にまでレーザビーム
が及んでしまうことがある。However, according to the conventional combination structure of the optical waveguide a having a square cross section and the spherical lenses b and d on the entrance side and the exit side as described above,
The shape of the irradiation spot when irradiating the irradiation surface e with the laser beam c is limited to a square similar to the cross-sectional shape of the optical waveguide a, and the laser beam may reach a portion where no processing is required. .
【０００５】また、従来の光導波路ａの場合、球面レン
ズｂにより集光したレーザビームｃが入射されるので、
球面レンズｂの焦点部においてレーザビームｃが一点に
集光される。これにより、焦点部でエネルギ密度が極端
に高くなり、高ピークパワーのレーザビームｃなどに用
いると、エネルギ密度が１５．６２Ｊ／ｃｍ2 （パルス
幅１０ｎｓ）に達する付近から、空気の電離破壊が起こ
り、エネルギ損失が生じてしまうと云ったことや、光導
波路ａに耐エネルギ性の高い石英を用いたとしても、こ
れが焦点部での高いエネルギ密度のために損傷すると云
ったことが起こり、耐エネルギ性の観点からの問題もあ
る。Further, in the case of the conventional optical waveguide a, since the laser beam c focused by the spherical lens b is incident,
The laser beam c is focused on one point at the focal point of the spherical lens b. As a result, the energy density becomes extremely high at the focal point, and when it is used for a laser beam c having a high peak power, the ionization breakdown of air starts from the vicinity where the energy density reaches 15.62 J / cm 2 (pulse width 10ns). That is, energy loss occurs, and even if quartz having high energy resistance is used for the optical waveguide a, it is said that this is damaged due to the high energy density at the focal portion, There is also a problem from the viewpoint of energy.
【０００６】そこで本発明は、このような従来の問題を
解決することを課題として、光ビームの方形形状をなす
照射スポットの縦横比を変えることができ、しかも焦点
部でのエネルギ密度の低減を図って高ピークパワーのパ
ルスレーザビームにも用いることができる、光ビーム平
均化光学系を提供することを目的とするものである。Therefore, the present invention has an object to solve such a conventional problem, and it is possible to change the aspect ratio of an irradiation spot having a rectangular shape of a light beam, and further, to reduce the energy density at a focal portion. It is an object of the present invention to provide a light beam averaging optical system that can be used for a pulse laser beam having a high peak power.
【０００７】[0007]
【課題を解決するための手段】本発明の光ビーム平均化
光学系は、上記のような目的を達成するために、光ビー
ムを入射側のシリンドリカルレンズにより一方向に集光
させて、この集光された光ビームの集光寸法に対応する
断面寸法となる方形断面を持った光導波路に入射させ、
この光導波路から出射される光ビームを出射側のシリン
ドリカルレンズにより前記と同じ一方向に集光させて照
射面に結像させる光学系を、前後２段に配置し、後段の
光学系は前段の光学系に対し光軸まわりに９０度回転さ
せた配置としたことを特徴とするものである。In order to achieve the above-mentioned object, a light beam averaging optical system of the present invention collects a light beam in one direction by a cylindrical lens on the incident side, and collects the light beam. The light is made incident on an optical waveguide having a rectangular cross section having a cross-sectional size corresponding to the condensed size of the light beam.
An optical system for converging the light beam emitted from this optical waveguide in the same one direction as the above by the emitting side cylindrical lens and forming an image on the irradiation surface is arranged in two stages before and after, and the optical system in the latter stage is arranged in the former stage. It is characterized in that the optical system is arranged so as to be rotated 90 degrees around the optical axis.
【０００８】この場合、前段、後段の各光学系におい
て、入射側のシリンドリカルレンズによる光ビームの焦
点位置が光導波路の手前位置にあるように設定するのが
好適である。In this case, it is preferable that in each of the front and rear optical systems, the focal position of the light beam by the incident side cylindrical lens is set to be in front of the optical waveguide.
【０００９】[0009]
【作用】本発明の光ビーム平均化光学系の上記構成で
は、前段の光学系の、入射側のシリンドリカルレンズお
よび光導波路によって、光ビームを一方向に集光させた
後平均化を行い、次いでこの光ビームを、出射側のシリ
ンドリカルレンズにより前記一方向に再度集光させて照
射面に対し結像するようにし、また、後段の各光学系
の、入射側のシリンドリカルレンズおよび光導波路によ
って、前段の光学系から出射される光ビームを、前段の
光学系とは光軸まわりに９０度回転した向きの一方向に
集光させた後平均化を行い、次いでこの光ビームを、出
射側のシリンドリカルレンズにより入射側のシリンドリ
カルレンズと同一の方向に再度集光させて照射面に対し
結像させるので、光ビームは互いに直角な２つの方向に
集光した方形な照射スポットをなして照射面に照射さ
れ、前段の光学系と後段の光学系との結像倍率を変える
ことにより、照射スポットの方形形状の縦横比を自在に
変更することができる。In the above-described configuration of the light beam averaging optical system of the present invention, the light beams are converged in one direction by the incident side cylindrical lens and the optical waveguide of the preceding optical system, and then the averaging is performed, and then the averaging is performed. This light beam is focused again in the one direction by the emission side cylindrical lens to form an image on the irradiation surface, and the front side optical system is provided by the incidence side cylindrical lens and optical waveguide of each optical system in the latter stage. The optical beam emitted from the optical system is focused in one direction, which is rotated by 90 degrees around the optical axis from the optical system in the previous stage, and then averaged. The lens refocuses the light in the same direction as the cylindrical lens on the incident side and forms an image on the irradiation surface, so the light beam is focused in two directions at right angles to each other. Tsu is irradiated bets on the irradiation surface forms a, by changing the imaging magnification with preceding optical system and the subsequent optical system, can be freely changed the aspect ratio of the rectangular shape of the irradiation spot.
【００１０】また光ビームを前段光学系および後段光学
系の、入射側および出射側の各シリンドリカルレンズに
より互いに直角な一方向にのみ集光して前記方形な照射
スポットをなすようにするものであり、従来の球面レン
ズのように一点に集光することはなく集光によるエネル
ギの高密度化を低減することができる。Further, the light beam is condensed only in one direction perpendicular to each other by each of the incident side and exit side cylindrical lenses of the front optical system and the rear optical system to form the rectangular irradiation spot. Unlike the conventional spherical lens, it is possible to reduce energy densification due to light condensing without condensing at one point.
【００１１】さらに、前段及び後段の各光学系が有する
光導波路は、それぞれに入射される光ビームの集光寸法
に対応する断面寸法となる方形断面を持っていることに
より、光導波路の光ビームに沿ったより直近の反射面に
て活発かつ万遍なく反射させるので、光強度の平均化を
効率よく十分に達成することができる。Further, the optical waveguides of the optical systems of the front stage and the rear stage have a rectangular cross section having a sectional size corresponding to the converging size of the light beam incident on each of the optical systems. Since the light is reflected on the nearest reflecting surface along the line vigorously and evenly, the averaging of the light intensity can be efficiently and sufficiently achieved.
【００１２】また、前段、後段の各光学系において、入
射側のシリンドリカルレンズによる光ビームの焦点位置
が光導波路の手前位置にあるように設定してあると、入
射側のシリンドリカルレンズの焦点位置に光ビームが集
光することにより集中するエネルギ密度が光導波路に働
かず、光導波路に影響するエネルギ密度を低減すること
ができる。Further, in each of the front and rear optical systems, if the focal position of the light beam by the incident side cylindrical lens is set to be in front of the optical waveguide, the focal position of the incident side cylindrical lens is set. When the light beam is condensed, the concentrated energy density does not work on the optical waveguide, and the energy density affecting the optical waveguide can be reduced.
【００１３】[0013]
【実施例】以下本発明が適用された一実施例としての光
ビーム平均化装置について、図１に基づき説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A light beam averaging device as an embodiment to which the present invention is applied will be described below with reference to FIG.
【００１４】本実施例の装置は図１に示すように、シリ
ンドリカルレンズ４、５と、これらの間に位置する光導
波路２とで前段の光学系Ａをなし、シリンドリカルレン
ズ６、７と、これらの間に位置する光導波路３とが後段
の光学系Ｂをなしている。In the apparatus of this embodiment, as shown in FIG. 1, the cylindrical lenses 4 and 5 and the optical waveguide 2 located between them form a pre-stage optical system A. The optical waveguide 3 located between the two forms an optical system B in the subsequent stage.
【００１５】光導波路２、３は石英製であり、これらの
前にある各光学系Ａ、Ｂでの入射側の各シリンドリカル
レンズ４、６を経て、図１に示す互いに直角なＸＹ２方
向の内の一方向に集光されるレーザビーム１の集光寸法
に対応した断面寸法となる方形断面を持っている。The optical waveguides 2 and 3 are made of quartz, and pass through the incident side cylindrical lenses 4 and 6 in the optical systems A and B in front of them, respectively, and then in the XY2 directions orthogonal to each other shown in FIG. It has a rectangular cross section having a cross-sectional size corresponding to the focused size of the laser beam 1 focused in one direction.
【００１６】特に、前段の光学系Ａのシリンドリカルレ
ンズ４からは、前記一方向、本実施例では水平なＸ方向
の集光によってＹ方向に向く線状に集光されたレーザビ
ーム１が出射され、光導波路２はこれに対応する長方形
断面を持っている。In particular, from the cylindrical lens 4 of the optical system A in the preceding stage, the laser beam 1 which is linearly focused in the one direction, that is, the horizontal X direction in this embodiment, is emitted in the Y direction. The optical waveguide 2 has a rectangular cross section corresponding to this.
【００１７】また、後段の光学系Ｂは前段の光学系Ａに
対し光軸まわりに９０度回転された配置とされ、垂直な
Ｙ方向にレーザビーム１を集光させるようになってい
る。The optical system B in the latter stage is arranged so as to be rotated by 90 degrees around the optical axis with respect to the optical system A in the former stage, so that the laser beam 1 is focused in the vertical Y direction.
【００１８】次に、動作について説明する。レーザビー
ム１は例えばＥ／Ｏ Ｑスイッチパルスレーザからパル
ス幅１０ｎｓにて出射され、これが前段光学系Ａの入射
側のシリンドリカルレンズ４を経て図のＸ方向に集光さ
れ、つまりＹ方向に向く線状となるように集光され、光
導波路２に入射される。Next, the operation will be described. The laser beam 1 is emitted from, for example, an E / O Q switch pulse laser with a pulse width of 10 ns, passes through a cylindrical lens 4 on the incident side of the pre-stage optical system A, and is condensed in the X direction in the figure, that is, a line directed in the Y direction. The light is condensed so as to have a shape and is incident on the optical waveguide 2.
【００１９】このとき、光導波路２をなす石英が損傷を
受けないように、シリンドリカルレンズ４の焦点位置が
光導波路２の手前となるように設定してあり、シリンド
リカルレンズ４の焦点位置へのレーザービーム１の集光
位置が光導波路２の手前にずれるので、光導波路２の入
射端でのレーザエネルギ密度を実験により求めた石英の
しきい値である４．３Ｊ／ｃｍ2 （パルス幅１０ｎｓ）
以下となるようにしている。At this time, the focal point of the cylindrical lens 4 is set in front of the optical waveguide 2 so that the quartz forming the optical waveguide 2 is not damaged, and the laser beam to the focal point of the cylindrical lens 4 is set. Since the focus position of the beam 1 is shifted to the front of the optical waveguide 2, the laser energy density at the incident end of the optical waveguide 2 is 4.3 J / cm 2 (pulse width 10 ns) which is the threshold value of quartz obtained by experiment.
The following is set.
【００２０】光導波路２に入射されるレーザビーム１
は、これの集光寸法に対応した断面寸法となる方形断面
を持った光導波路２の中で、光導波路の光ビームに沿っ
たより直近の反射面にて活発かつ万遍なく多重反射させ
るので、光強度のＸ方向での平均化を効率よく十分に達
成することができる。なお、光導波路２の断面寸法はレ
ーザビーム１の少なくとも集光方向寸法に対応したもの
であれば、平均化機能を十分に満足することができる。Laser beam 1 incident on the optical waveguide 2
In the optical waveguide 2 having a rectangular cross-section having a cross-sectional size corresponding to the light-condensing size, is actively and uniformly multi-reflected on the nearest reflecting surface along the light beam of the optical waveguide. The averaging of the light intensity in the X direction can be efficiently and sufficiently achieved. If the cross-sectional dimension of the optical waveguide 2 corresponds to at least the dimension of the laser beam 1 in the focusing direction, the averaging function can be sufficiently satisfied.
【００２１】光導波路２から出たレーザビーム１は、前
段光学系Ａの出射側のシリンドリカルレンズ５によっ
て、後段の光学系Ｂを介してレーザ照射面８の面上に結
像させるようにする。このとき、前段の光学系Ａの場合
同様に、後段の光学系Ｂのシリンドリカルレンズ６の焦
点位置が、光導波路３の手前位置となるようにしてある
ので、後段の光学系Ｂにおいても、光導波路３の入射端
でのレーザエネルギ密度を低減することができる。The laser beam 1 emitted from the optical waveguide 2 is made to form an image on the surface of the laser irradiation surface 8 via the optical system B in the rear stage by the cylindrical lens 5 on the emission side of the front optical system A. At this time, as in the case of the optical system A in the former stage, the focal position of the cylindrical lens 6 in the optical system B in the latter stage is set to be the position before the optical waveguide 3, so that in the latter optical system B, The laser energy density at the incident end of the waveguide 3 can be reduced.
【００２２】もっとも上記のような構成上、前段および
後段の各光学系Ａ、Ｂのいずれの光学要素にもレーザビ
ームの集光位置がないので、前記各光導波路２、３はも
とより、これらよりも耐エネルギ密度の低いシリンドリ
カルレンズ４〜７にも、エネルギ密度が集中するような
ことを回避している。However, because of the above structure, there is no focusing position of the laser beam in any of the optical elements of the optical systems A and B in the front stage and the rear stage. Moreover, the energy density is prevented from being concentrated on the cylindrical lenses 4 to 7 having a low energy resistance density.
【００２３】後段の光学系Ｂにおいてもレーザビーム１
は、入射側のシリンドリカルレンズ６により図のＹ方向
に集光された後、このときのレーザビーム１の集光寸
法、特に集光方向寸法と対応した断面寸法となる方形断
面を持った光導波路３により、前記前段の光学系Ａの場
合と同様に、Ｙ方向の光強度の均一化を効率よく十分に
達成され、この後シリンドリカルレンズ７によりレーザ
照射面８上に結像される。Also in the optical system B in the latter stage, the laser beam 1
Is an optical waveguide having a rectangular cross section, which is focused by the cylindrical lens 6 on the incident side in the Y direction of the figure and then has a focusing dimension of the laser beam 1 at this time, in particular, a sectional dimension corresponding to the dimension in the focusing direction. As in the case of the optical system A of the preceding stage, the uniformization of the light intensity in the Y direction can be efficiently and sufficiently achieved by the method 3, and thereafter, the image is formed on the laser irradiation surface 8 by the cylindrical lens 7.
【００２４】以上のようにレーザビーム１は、前段の光
学系Ａと後段の光学系Ｂとにより、互いに直角なＸＹ２
方向に集光した方形な照射スポット１ａをなして照射面
に照射されることになる。As described above, the laser beam 1 is XY2 perpendicular to each other by the optical system A at the front stage and the optical system B at the rear stage.
The irradiation surface is irradiated with a rectangular irradiation spot 1a condensed in the direction.
【００２５】このとき、シリンドリカルレンズ５、７の
焦点距離を変え、かつ光導波路２、３とシリンドリカル
レンズ５、７の位置関係を変化させることにより、レー
ザ照射面８上での方形な照射スポット１ａのＸ方向およ
びＹ方向での結像倍率を個別に変化させることができ、
レーザビーム１による照射スポットの縦横比を自在に変
更することができる。At this time, by changing the focal lengths of the cylindrical lenses 5 and 7 and changing the positional relationship between the optical waveguides 2 and 3 and the cylindrical lenses 5 and 7, a rectangular irradiation spot 1a on the laser irradiation surface 8 is obtained. The imaging magnification in the X and Y directions of can be changed individually,
The aspect ratio of the irradiation spot by the laser beam 1 can be freely changed.
【００２６】また前段および後段の各光学系Ａ、Ｂは、
それぞれの入力側および出力側の各シリンドリカルレン
ズ４，５、６，７によってレーザビーム１を互いに直角
なＸ方向およびＹ方向のうちの一方向にのみ個別に集光
して前記方形な照射スポット１ａをなすように集光させ
るものであり、従来の球面レンズのように一点に集光す
ることはなく集光によるエネルギの高密度化を低減する
ことができ、高ピークパワーのレーザに適用しても空気
の電離破壊によるエネルギ損失を防止することができ
る。The front and rear optical systems A and B are
The rectangular irradiation spot 1a is formed by individually condensing the laser beam 1 only in one of the X direction and the Y direction which are orthogonal to each other by each of the input side and output side cylindrical lenses 4, 5, 6, 7. Since it does not focus on a single point like a conventional spherical lens, it can reduce the energy density increase due to focusing, and can be applied to lasers with high peak power. Can prevent energy loss due to ionization breakdown of air.
【００２７】[0027]
【発明の効果】本発明の光ビーム均一化装置によれば、
光ビームは前後段の２つの光学系によって互いに直角な
２つの方向に個別に集光した方形な照射スポットをなし
て照射面に照射され、前段の光学系と後段の光学系との
結像倍率を変えることにより、照射スポットの方形形状
の縦横比を自在に変更できるので、処理に必要な領域に
のみ光ビームを照射して、適正にしかも無駄なく処理す
ることができる。According to the light beam homogenizing apparatus of the present invention,
The light beam forms a rectangular irradiation spot that is individually focused in two directions orthogonal to each other by the two optical systems in the front and rear stages, and is irradiated onto the irradiation surface, and the imaging magnification of the front stage optical system and the rear stage optical system is increased. Since the aspect ratio of the rectangular shape of the irradiation spot can be freely changed by changing, the light beam can be irradiated only to the area necessary for the processing, and the processing can be performed properly and without waste.
【００２８】また光ビームを前段および後段にて互いに
直角な一方向にのみ個別に集光して前記方形な照射スポ
ットをなすようにし、従来の球面レンズのように一点に
集光するようなことなく集光によるエネルギの高密度化
を低減するので、空気の電離破壊によるエネルギの損失
の問題なしに高ピークパワーのレーザ等にも適用するこ
とができる。In addition, the light beams are individually focused only in one direction perpendicular to each other in the front stage and the rear stage so as to form the rectangular irradiation spot, and are focused at one point like a conventional spherical lens. Since the density of energy is reduced by condensing light, it can be applied to a laser with high peak power without the problem of energy loss due to ionization breakdown of air.
【００２９】さらに、前段及び後段の各光学系の光導波
路が、それぞれに入射される光ビームに対応した方形断
面により、光ビームに沿ったより直近の反射面にて活発
かつ万遍なく反射させて、光強度の平均化を十分に達成
させられるので、平均化効率が高く光ビームによる処理
の高精度化が図れる。Further, the optical waveguides of the front and rear optical systems have a rectangular cross-section corresponding to the light beam incident on each of them, so that the light is reflected uniformly and uniformly on the reflection surface closer to the light beam. Since the averaging of the light intensity can be sufficiently achieved, the averaging efficiency is high and the accuracy of the processing by the light beam can be improved.
【００３０】そして、前段および後段の光学系におい
て、入射側のシリンドリカルレンズの焦点位置が光導波
路の手前位置となるように設定してあるので、シリンド
リカルレンズの焦点位置に光ビームが集光されて集中す
るエネルギ密度が光導波路に働かず、この光導波路に影
響するエネルギ密度を低減することができ、光学系の安
全が図れる。In the front and rear optical systems, since the focal position of the incident side cylindrical lens is set to the front position of the optical waveguide, the light beam is condensed at the focal position of the cylindrical lens. The concentrated energy density does not act on the optical waveguide, and the energy density affecting this optical waveguide can be reduced, and the safety of the optical system can be achieved.
【図１】本発明が適用された一実施例としての光ビーム
均一化装置を示す概略斜視図である。FIG. 1 is a schematic perspective view showing a light beam homogenizing apparatus as one embodiment to which the present invention is applied.
【図２】従来の光ビーム均一化装置を示す概略斜視図で
ある。FIG. 2 is a schematic perspective view showing a conventional light beam homogenizing device.
Ａ 前段の光学系 Ｂ 後段の光学系 １ 光ビーム ２、３ 光導波路 ４〜７ シリンドリカルレンズ ８ 照射面 A Front-stage optical system B Back-stage optical system 1 Light beam 2, 3 Optical waveguide 4-7 Cylindrical lens 8 Irradiation surface
Claims (2)
ズにより一方向に集光させて、この集光された光ビーム
の集光寸法に対応する断面寸法の方形断面を持った光導
波路に入射させ、この光導波路から出射される光ビーム
を出射側のシリンドリカルレンズにより前記と同じ一方
向に集光させて照射面に結像させる光学系を、前後２段
に配置し、後段の光学系は前段の光学系に対し光軸まわ
りに９０度回転させた配置としたことを特徴とする光ビ
ーム均一化光学系。1. A light beam is condensed by a cylindrical lens on the incident side in one direction and is incident on an optical waveguide having a rectangular cross section having a cross-sectional dimension corresponding to the condensed dimension of the condensed light beam, An optical system for converging the light beam emitted from this optical waveguide in the same one direction as the above by the emitting side cylindrical lens and forming an image on the irradiation surface is arranged in two stages before and after, and the optical system in the latter stage is arranged in the former stage. An optical system for uniformizing a light beam, wherein the optical system is arranged so as to be rotated by 90 degrees around the optical axis with respect to the optical system.
のシリンドリカルレンズによる光の焦点位置が光導波路
の手前位置にあるように設定した請求項１に記載の光ビ
ーム均一化光学系。2. The light beam homogenizing optical system according to claim 1, wherein in each of the front and rear optical systems, the focal position of the light by the incident side cylindrical lens is set to the front position of the optical waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5167711A JPH0727993A (en) | 1993-07-07 | 1993-07-07 | Optical system with uniformalized light beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5167711A JPH0727993A (en) | 1993-07-07 | 1993-07-07 | Optical system with uniformalized light beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0727993A true JPH0727993A (en) | 1995-01-31 |
Family
ID=15854794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5167711A Pending JPH0727993A (en) | 1993-07-07 | 1993-07-07 | Optical system with uniformalized light beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727993A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19520187C1 (en) * | 1995-06-01 | 1996-09-12 | Microlas Lasersystem Gmbh | Optical system for excimer laser |
| DE19619481C1 (en) * | 1996-05-14 | 1997-11-27 | Aesculap Meditec Gmbh | Method and device for removing material with a laser beam |
| JP2004134785A (en) * | 2002-09-19 | 2004-04-30 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiator and method for manufacturing semiconductor device |
| JP2005072565A (en) * | 2003-08-04 | 2005-03-17 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiation unit, and method for manufacturing semiconductor device |
| JP2005129889A (en) * | 2003-04-24 | 2005-05-19 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiator, and method of manufacturing semiconductor device |
| US7128737B1 (en) | 1997-10-22 | 2006-10-31 | Carl Zeiss Meditec Ag | Object figuring device |
| JP2007007683A (en) * | 2005-06-29 | 2007-01-18 | Sumitomo Heavy Ind Ltd | Beam superposition device, and laser machining method |
| JP2007185687A (en) * | 2006-01-13 | 2007-07-26 | National Institute Of Advanced Industrial & Technology | Laser beam machining apparatus |
| KR101037119B1 (en) * | 2003-04-24 | 2011-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US8105435B2 (en) | 2002-09-19 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device |
-
1993
- 1993-07-07 JP JP5167711A patent/JPH0727993A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19520187C1 (en) * | 1995-06-01 | 1996-09-12 | Microlas Lasersystem Gmbh | Optical system for excimer laser |
| US5721416A (en) * | 1995-06-01 | 1998-02-24 | Microlas Lasersystem Gmbh | Optics for forming a sharp illuminating line of a laser beam |
| DE19619481C1 (en) * | 1996-05-14 | 1997-11-27 | Aesculap Meditec Gmbh | Method and device for removing material with a laser beam |
| US7545515B2 (en) | 1997-10-22 | 2009-06-09 | Carl Zeiss Meditec Ag | Object shaping device |
| US7128737B1 (en) | 1997-10-22 | 2006-10-31 | Carl Zeiss Meditec Ag | Object figuring device |
| US7859684B2 (en) | 1997-10-22 | 2010-12-28 | Carl Zeiss Meditec Ag | Object figuring device |
| JP2004134785A (en) * | 2002-09-19 | 2004-04-30 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiator and method for manufacturing semiconductor device |
| US8105435B2 (en) | 2002-09-19 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device |
| JP2005129889A (en) * | 2003-04-24 | 2005-05-19 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiator, and method of manufacturing semiconductor device |
| US8457463B2 (en) | 2003-04-24 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US7953310B2 (en) | 2003-04-24 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| JP4619035B2 (en) * | 2003-04-24 | 2011-01-26 | 株式会社半導体エネルギー研究所 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| KR101037119B1 (en) * | 2003-04-24 | 2011-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| JP2005072565A (en) * | 2003-08-04 | 2005-03-17 | Semiconductor Energy Lab Co Ltd | Beam homogenizer, laser irradiation unit, and method for manufacturing semiconductor device |
| JP2007007683A (en) * | 2005-06-29 | 2007-01-18 | Sumitomo Heavy Ind Ltd | Beam superposition device, and laser machining method |
| JP2007185687A (en) * | 2006-01-13 | 2007-07-26 | National Institute Of Advanced Industrial & Technology | Laser beam machining apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08327942A (en) | Optical apparatus for generation of sharp irradiated radiation from laser beam | |
| JPH0764003A (en) | Scanning optical system | |
| US5601733A (en) | Full field mask illumination enhancement methods and apparatus | |
| JPH0727993A (en) | Optical system with uniformalized light beam | |
| US20070139791A1 (en) | Illumination system optimized for throughput and manufacturability | |
| KR100659438B1 (en) | Apparatus and method for laser processing | |
| KR20020033059A (en) | Illumination system with reduced heat load | |
| US5828496A (en) | Illumination optical system | |
| Kahlert et al. | Excimer laser illumination and imaging optics for controlled microstructure generation | |
| JP2006084932A (en) | Optical fiber transmission apparatus for high power laser beam | |
| JP3406946B2 (en) | Illumination optical system, optical apparatus using the same, and device manufacturing method using the optical apparatus | |
| JPH07221000A (en) | Laser exposure lithography apparatus | |
| KR100582813B1 (en) | Quadrupole device for projection lithography by means of charged particles | |
| JP2002023099A (en) | Laser beam machining device and laser beam machining method | |
| JP3057110B2 (en) | Laser processing mask irradiation equipment | |
| US7810938B2 (en) | Laser configuration | |
| JP2001075043A (en) | Precise variable type long beam optical system | |
| JP3285957B2 (en) | Optical device | |
| JP4927051B2 (en) | Semiconductor laser light output device and solid-state laser rod excitation module | |
| JP4818958B2 (en) | Beam irradiation apparatus and beam irradiation method | |
| RU2778397C1 (en) | Device for manufacturing a groove and method for manufacturing a groove | |
| JPH10197709A (en) | Binary optics and laser working device using the same | |
| JP2687791B2 (en) | Light processing equipment | |
| JP3883077B2 (en) | Solid-state laser device and method of entering laser light into fiber | |
| JP2004195516A (en) | Laser beam machining apparatus and laser beam machining method |