JPH0727869B2 - Plasma deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a plasma deposition apparatus, including electronic materials such as electrically conductive materials, electromagnetic shielding materials, and LSI materials, as well as multi-layered substances and molecular films having new functions. It can be effectively used for manufacturing chemical and optical materials.

[Problems to be Solved by Prior Art and Invention]

There are various methods for producing a material to be used in fields such as electronic materials by depositing thin film substances on various substrates. In addition to wet (liquid phase) methods such as plating, PVD method ( Physical (vapor deposition) methods, thermal spraying of metals and ceramics, and dry (vapor) methods such as CVD (chemical vapor deposition) are used.

The PVD method is a method of evaporating a metal material or the like by various methods to form a thin film on a substrate, and a vacuum deposition method, a sputtering method, an ion plating method, etc. are known, and a thermal spraying method is a metal or a ceramic. It is used for coating a relatively thick and high-speed coating using a thermal spray gun while melting a heat resistant material such as.

On the other hand, the CVD method is a method in which vaporized gaseous substances are decomposed by heat or external energy such as electromagnetic waves to change the chemical structure and deposit on various substrates. Photo-CVD method to accelerate chemical reaction by using, or M using organometallic compound
OCVD (Metal Organic CVD) method has been developed and applied to thin film formation of metals and carbon, epitaxial growth of silicon, gallium and arsenic compounds in fields such as IC and LSI, or LED (light emitting diode) EL (electronic fluorescence) Has been done. In particular, plasma CVD technology has been developed as a method for producing amorphous silicon films used in solar cells and the like, and it is possible to create thin films of diamond and graphite materials by applying the technology to organic compounds. The frequency is increasing.

However, in such a plasma CVD apparatus (plasma vapor deposition apparatus) used for the plasma CVD method, the raw material (reactant) is a gas such as methane at room temperature,
Alternatively, it is limited to substances that easily vaporize, such as benzene, and substances that are difficult to gasify cannot be used.

Therefore, the raw materials that can be used are limited, and there is a drawback that they lack versatility.

The present invention solves the above-mentioned conventional drawbacks, and can use a substance from a substance that is gaseous at room temperature to a substance that is difficult to gasify as a raw material, and as a result, provides a plasma deposition apparatus that can deposit these substances on a substrate. That is the purpose.

[Means and Actions for Solving Problems]

That is, the present invention is a plasma having a thermal decomposition part, a plasma generation part and a substrate vapor deposition part, and connecting the thermal decomposition part and the plasma generation part through a connecting part consisting of a control valve and an orifice. A vapor deposition apparatus is provided.

Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view showing one embodiment of the plasma vapor deposition device of the present invention.

Reference numeral 1 in the figure denotes a pyrolysis unit, which does not require a special structure and can be of the same structure as a normal pyrolysis furnace such as an electric furnace. Further, the usual pyrolysis furnace itself may be used as the pyrolysis section. Here, as the thermal decomposition section 1, a temperature control range of room temperature to 1,000 ° C., a pressure that can be performed under normal pressure or reduced pressure, and a structure that can create an inert atmosphere, for example, an infrared heating type electric furnace is preferable.

Next, in the figure, reference numeral 2 is a plasma generation unit, which constitutes a plasma deposition unit together with a substrate deposition unit 3 described later. The plasma vapor deposition unit may have the same structure as a conventionally known plasma vapor deposition apparatus, or may be a known plasma vapor deposition apparatus itself.

Conventionally known plasma vapor deposition apparatuses (plasma CVD apparatuses) include a direct current plasma CVD apparatus, a high frequency plasma CVD apparatus, a microwave plasma CVD apparatus and the like. In the present invention, any of these plasma CVD apparatuses has the same structure. May be. It should be noted that FIG. 1 shows a plasma vapor deposition unit having the same structure as a conventional high-frequency plasma CVD apparatus. That is, in FIG. 1, the plasma generator 2
Has a generator, and the high frequency (RF, 13.56MHz) generated from this generator ionizes the gas to generate plasma. When the plasma generator 2 has the same structure as the DC plasma CVD apparatus, the plasma generator 2 is composed of a cathode and an anode. A DC electric field is applied to the plasma generator 2 to ionize gas by glow discharge to generate plasma. Further, in the case of having the same structure as the microwave plasma CVD apparatus, the plasma generating unit 2 is composed of a microwave oscillator, and the microwave (2.45 GHz) from this oscillator ionizes the gas to generate plasma.

Next, the substrate vapor deposition unit 3 has a substrate for depositing the plasma generated by the plasma generation unit 2. The substrate vapor deposition unit 3 has a structure capable of vapor depositing various substrates, such as silicon wafers, and it is preferable that the temperature can be controlled within the range of room temperature to 1000 ° C. by an internal heating means such as a heater. A heat carrier for heat can also be used. In the figure, reference numeral 4 is a heater.

The plasma generation unit 2 and the substrate deposition unit 3 are vacuum pumps 5.
It is kept at a vacuum of 1 Torr or less, preferably 10 ^-3 Torr or less.

The plasma deposition apparatus of the present invention has the thermal decomposition section 1, the plasma generation section 2 and the substrate deposition section 3 as described above.
In the present invention, it is sufficient that the thermal decomposition section 1 and the plasma vapor deposition section including the plasma generation section 2 and the substrate vapor deposition section 3 are connected so that they can be connected and disconnected. However, as shown in FIG. They are connected via a connecting portion 6 composed of a valve and an orifice.

Here, the control valve (control valve) is not particularly limited as long as it can connect and disconnect the thermal decomposition section 1 and the plasma deposition section, but it is preferable to use a solenoid valve that operates quickly.

Further, the orifice may be any one that can control the flow rate of the pyrolysis gas from the pyrolysis unit 1 to the plasma deposition unit. The orifice diameter may be selected so as to maintain an appropriate flow rate by the pressure difference between the thermal decomposition section 1 and the plasma vapor deposition section.

In this connection, specifically, the thermal decomposition gas outlet pipe 7 provided at the outlet of the thermal decomposition unit 1 is connected to the thermal decomposition gas introduction pipe 8 provided at the inlet of the plasma deposition unit via the connection unit 6. It can be done by doing. Further, various raw materials can be used by separately providing an ordinary raw material gas introduction pipe (not shown) in addition to the pyrolysis gas introduction pipe 8.

In the plasma deposition apparatus of the present invention as described above, various polymer compounds and low molecular compounds are thermally decomposed in the thermal decomposition unit 1. Next, the pyrolysis gas is supplied from the pyrolysis gas outlet pipe 7 to the plasma vapor deposition unit via the connecting portion 6 consisting of the control valve and the orifice and by the pyrolysis gas introduction pipe 8 to the plasma vapor deposition unit under vacuum. It is introduced into the plasma generator 2. Plasma (normal high-frequency plasma) is applied to the pyrolysis gas in the plasma generation unit 2, and the substrate vapor deposition unit 3 is subjected to CVD.
Form a film.

The control valve intermittently introduces the pyrolysis gas into the plasma generator 2, and the flow rate is controlled by the orifice. Normally, the pyrolysis unit 1 side is operated under normal pressure or slightly pressurized, and the plasma generation unit 2 side is operated under a high vacuum.

The pyrolysis gas introduced into the plasma generating unit 2 forms a CVD film under the operating conditions of a normal plasma CVD apparatus. The high frequency plasma applied here is generally 13.5
6MHz is used.

〔The invention's effect〕

According to the plasma deposition apparatus of the present invention, a CVD film can be formed using a substance that is difficult to gasify as a raw material.

That is, in the plasma vapor deposition apparatus of the present invention, since the thermal decomposition part is provided in front of the plasma generation part, high temperature decomposition substances such as various heat resistant polymers are thermally decomposed in the thermal decomposition part. Is easily introduced into the plasma deposition part consisting of the plasma generation part and the substrate deposition part.
A film can be formed.

Further, by separately providing a raw material gas introduction pipe, a CVD film can be formed by using a raw material used in a conventional plasma deposition apparatus as a raw material.

Therefore, the plasma vapor deposition apparatus of the present invention can be effectively used for manufacturing various electronic materials and the like.

[Brief description of drawings]

FIG. 1 is a schematic view showing one embodiment of the plasma vapor deposition device of the present invention. 1 ... Thermal decomposition part, 2 ... Plasma generation part, 3 ... Substrate deposition part, 4 ... Heater, 5 ... Vacuum pump, 6 ... Connection part, 7 ...
Pyrolysis gas outlet pipe, 8 ... Pyrolysis gas introduction pipe

Claims (1)

[Claims] 1. A plasma having a thermal decomposition part, a plasma generation part, and a substrate vapor deposition part, and connecting the thermal decomposition part and the plasma generation part through a connection part composed of a control valve and an orifice. Vapor deposition equipment.