JPH0727733A - Capacitance type humidity sensor - Google Patents

Capacitance type humidity sensor

Info

Publication number
JPH0727733A
JPH0727733A JP19417893A JP19417893A JPH0727733A JP H0727733 A JPH0727733 A JP H0727733A JP 19417893 A JP19417893 A JP 19417893A JP 19417893 A JP19417893 A JP 19417893A JP H0727733 A JPH0727733 A JP H0727733A
Authority
JP
Japan
Prior art keywords
humidity
humidity sensor
thin film
sensitive film
aromatic polyamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19417893A
Other languages
Japanese (ja)
Inventor
Naohiro Fujisawa
直広 藤澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nok Corp
Original Assignee
Nok Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nok Corp filed Critical Nok Corp
Priority to JP19417893A priority Critical patent/JPH0727733A/en
Publication of JPH0727733A publication Critical patent/JPH0727733A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To obtain a humidity sensor which shows superior safety in an environment of a high temperature and high humidities by using an aromatic polyamide thin film as a polymer humidity-sensitive film. CONSTITUTION:After Mo, Au films are continuously formed on an insulated substrate 31 having a terminal part 32 by sputtering, a resist pattern is formed by photolithography. Then, the resist pattern is etched to form a lower electrode 34. A humidity-sensitive film 35 is formed on the electrode 34 by vapor deposition by using aromatic polyamide over the metal-masked substrate 31. An upper electrode 36 of a specific thickness is further formed out of Au on the humidity- sensitive film 35 by vapor deposition. The change of the capacitance to the relative humidity of the humidity sensor holds a favorable correlation. Moreover, the relative humidity deviation is 4%RH in 1000 hours in an environment of such high temperature and high humidity as 60 deg.C and 90%RH.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、静電容量式湿度センサ
に関する。更に詳しくは、絶縁性基板上に下部電極、高
分子感湿膜および上部電極を順次形成させた静電容量式
湿度センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitance type humidity sensor. More specifically, it relates to a capacitance type humidity sensor in which a lower electrode, a polymer moisture sensitive film and an upper electrode are sequentially formed on an insulating substrate.

【0002】[0002]

【従来の技術】絶縁性基板上に下部電極、高分子感湿膜
および上部電極を順次形成させた静電容量式湿度センサ
において、高分子感湿膜としてポリイミド薄膜を用いた
ものが、先に本出願人によって提案されている(特開平4
-19553号公報)。
2. Description of the Related Art In a capacitance type humidity sensor in which a lower electrode, a polymer moisture sensitive film and an upper electrode are sequentially formed on an insulating substrate, one using a polyimide thin film as the polymer moisture sensitive film is first known. Proposed by the applicant (Japanese Patent Laid-Open No.
-19553 publication).

【0003】この湿度センサにおいては、感湿膜をポリ
イミド樹脂で形成させることにより、薄膜化(数μm以
下)に伴う速い応答性、膜厚の調節による応答性の調節
を可能とするなど、所期の目的は達成し得たものの、例
えば60℃-90%RH、1000時間といった高温高湿環境条件下
での安定性の点では、なお一層の改善が求められた。
In this humidity sensor, the moisture-sensitive film is formed of a polyimide resin, which enables quick response due to thinning (less than several μm) and adjustment of film thickness. Although the objective of the period was achieved, further improvement was required in terms of stability under high temperature and high humidity environmental conditions such as 60 ° C-90% RH and 1000 hours.

【0004】[0004]

【発明が解決しようとする課題】本発明の目的は、例え
ば60℃-90%RH、1000時間といった高温高湿環境条件下で
の安定性にすぐれた静電容量式湿度センサを提供するこ
とにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a capacitance type humidity sensor having excellent stability under high temperature and high humidity environmental conditions such as 60 ° C.-90% RH and 1000 hours. is there.

【0005】[0005]

【課題を解決するための手段】かかる本発明の目的は、
絶縁性基板上に下部電極、高分子感湿膜および上部電極
を順次形成させた湿度センサにおいて、高分子感湿膜と
して芳香族ポリアミド薄膜を用いることによって達成さ
れ、更に好ましくは下部電極-芳香族ポリアミド薄膜間
に配向されたポリイミド薄膜が形成される。
The object of the present invention is as follows.
In a humidity sensor in which a lower electrode, a polymer moisture sensitive film and an upper electrode are sequentially formed on an insulating substrate, this is achieved by using an aromatic polyamide thin film as the polymer moisture sensitive film, more preferably the lower electrode-aromatic An oriented polyimide thin film is formed between the polyamide thin films.

【0006】静電容量式湿度センサは、絶縁性基板上に
形成させた導電性電極の表面を高分子薄膜で被覆し、こ
の高分子感湿膜の上に透湿性上部電極を形成させ、これ
と導電性電極よりなる下部電極とで高分子感湿膜を挟ん
だ構造をとっている。そして、容量検出型湿度センサの
働きは、湿度によって感湿膜中の含水量が変化するのに
伴う誘電率の変化量が静電容量の変化量として検出され
るという原理に基いている。
In a capacitance type humidity sensor, the surface of a conductive electrode formed on an insulating substrate is covered with a polymer thin film, and a moisture permeable upper electrode is formed on the polymer moisture sensitive film. And a lower electrode composed of a conductive electrode sandwiching a polymer moisture sensitive film. The function of the capacitance-type humidity sensor is based on the principle that the change amount of the dielectric constant due to the change of the water content in the moisture sensitive film due to the humidity is detected as the change amount of the electrostatic capacitance.

【0007】静電容量式湿度センサとしては、従来主と
して次の2種類のものが一般に採用されており、本発明
においても同様である。 (1)図2の(a)〜(c)に示されるように、絶縁性基板21上
にスパッタリング法または蒸着法およびフォトリソグラ
フ法を適用して端子部22,22´を有する一対の対向形状
下部電極23,23´を形成させた後、感湿膜24および蒸着
膜よりなる上部電極25を順次重ねて形成させたもの (2)図3の(a)〜(c)に示されるように、絶縁性基板31上
に端子部32を有し、電極部33を大きく設けた下部電極34
を形成させた後、電極部上に感湿膜35を重ねて形成さ
せ、更に下部電極と対称的な形状を有する上部電極36
(あるいはくし形形状の上部電極)をその電極部37が感湿
膜上に位置し、端子部38が下部電極の端子部と対称位置
になるように形成させたもの
Conventionally, the following two types of capacitance type humidity sensors have generally been generally adopted, and the same applies to the present invention. (1) As shown in FIGS. 2 (a) to 2 (c), a pair of opposed shapes having terminal portions 22 and 22 'on an insulating substrate 21 by applying a sputtering method or a vapor deposition method and a photolithography method. After the lower electrodes 23, 23 'are formed, the moisture-sensitive film 24 and the upper electrode 25 made of a vapor deposition film are successively formed in layers (2) As shown in (a) to (c) of FIG. A lower electrode 34 having a terminal portion 32 on an insulating substrate 31 and a large electrode portion 33
After forming the above, a moisture sensitive film 35 is formed on the electrode portion, and the upper electrode 36 having a shape symmetrical with the lower electrode is formed.
(Or a comb-shaped upper electrode) formed so that its electrode portion 37 is located on the moisture sensitive film and the terminal portion 38 is symmetrical to the terminal portion of the lower electrode.

【0008】絶縁性基板としては、ガラス、アルミナ、
石英、表面が絶縁処理されたシリコンウェハなどが用い
られ、前記の如き構成を有する上部電極および下部電極
の電極材料としては、Au、Pt、Alなどの薄膜化し得る導
体が用いられ、薄膜化は蒸着法、スパッタリング法など
によって行われる。また、それのパターニングは、フォ
トリソグラフィーによるレジストパターンの形成および
エッチングにより行われる。
As the insulating substrate, glass, alumina,
Quartz, a silicon wafer whose surface has been subjected to an insulation treatment, or the like is used.As the electrode material of the upper electrode and the lower electrode having the above-described structure, a conductor that can be thinned such as Au, Pt, or Al is used. It is performed by a vapor deposition method, a sputtering method, or the like. The patterning is performed by forming a resist pattern by photolithography and etching.

【0009】芳香族ポリアミド感湿膜は、デュポン社製
品ケブラー49、帝人製品テクノーラ等の芳香族ポリアミ
ド樹脂を、下部電極を形成させた絶縁性基板上にメタル
マスクによる必要なマスキングを施した後、蒸着させる
方法などによって、約1〜数μmの膜厚で形成される。
The aromatic polyamide moisture-sensitive film is obtained by subjecting an aromatic polyamide resin such as Kevlar 49 manufactured by DuPont or Technora manufactured by Teijin Co., Ltd. to an insulating substrate on which a lower electrode is formed, after performing a necessary masking with a metal mask. It is formed with a film thickness of about 1 to several μm by a method such as vapor deposition.

【0010】このような芳香族ポリアミド感湿膜は、下
部電極上に直接形成させることもできるが、その間に配
向処理されたポリイミド薄膜を介在させることが好まし
い。配向処理されるポリイミド薄膜の形成は、ポリイミ
ド樹脂のコーティング剤(これは市販品をそのまま使用
し得る)を用い、これをスピンコート後プリベークし、
ポジ型フォトレジストをスピンコート、プリベーク、露
光、現像後レジストを除去し、熱処理することにより行
われる。
Although such an aromatic polyamide moisture sensitive film can be formed directly on the lower electrode, it is preferable to interpose an oriented polyimide thin film therebetween. The polyimide thin film to be oriented is formed by using a polyimide resin coating agent (which may be a commercially available product as it is), pre-baking it after spin coating,
The positive photoresist is spin-coated, pre-baked, exposed, and developed, and then the resist is removed and heat treatment is performed.

【0011】ポリイミド薄膜の配向処理は、ガーゼ、フ
ェルト等を用いて一定方向に擦するラビング操作を数回
乃至10数回程度ポリイミド薄膜に適用することにより行
われる。このようにして配向されたポリイミド薄膜上
に、蒸着法などによって芳香族ポリアミド薄膜を形成さ
せると、この芳香族ポリアミド薄膜も自然に配向された
状態となる。
The orientation treatment of the polyimide thin film is carried out by applying a rubbing operation of rubbing in a certain direction with gauze, felt or the like to the polyimide thin film several times to ten times. When an aromatic polyamide thin film is formed on the oriented polyimide thin film by a vapor deposition method or the like, the aromatic polyamide thin film is naturally oriented.

【0012】[0012]

【発明の効果】静電容量式湿度センサの高分子感湿膜と
して、芳香族ポリアミド薄膜を用いることにより、高温
高湿環境条件下での安定性が改善される。このような改
善効果は、下部電極-芳香族ポリアミド薄膜間に配向さ
れたポリイミド薄膜を介在させ、それによって芳香族ポ
リアミド薄膜を配向させることにより一段と高められ
る。
By using an aromatic polyamide thin film as the polymer moisture sensitive film of the capacitance type humidity sensor, the stability under high temperature and high humidity environmental conditions is improved. Such an improving effect is further enhanced by interposing a oriented polyimide thin film between the lower electrode and the aromatic polyamide thin film, and thereby orienting the aromatic polyamide thin film.

【0013】[0013]

【実施例】次に、実施例について本発明を説明する。EXAMPLES The present invention will now be described with reference to examples.

【0014】実施例1 ガラス基板上に、スパッタリング法によりMoを500Å、A
uを2000Åの膜厚で連続成膜した後、フォトリソグラフ
ィーによりレジストのパターンを形成させ、その後エッ
チングして図3(a)に示される形状の下部電極を形成さ
せた。その電極上に、芳香族ポリアミド(デュポン社製
品ケブラー49)を用い、メタルマスキングした基板上
に、蒸着法により膜厚2.2μmの感湿膜を形成させた。更
に、この感湿膜上に、蒸着法により膜厚100Åの上部電
極をAuで形成させた。
Example 1 On a glass substrate, 500 Å Mo and
After continuously forming u with a film thickness of 2000Å, a resist pattern was formed by photolithography, and then etching was performed to form a lower electrode having a shape shown in FIG. On the electrode, a moisture-sensitive film having a thickness of 2.2 μm was formed by vapor deposition on a metal-masked substrate using aromatic polyamide (Kevlar 49 manufactured by DuPont). Further, an upper electrode having a film thickness of 100 Å was formed of Au on the moisture sensitive film by a vapor deposition method.

【0015】実施例2 実施例1と同様にしてガラス基板上に下部電極を形成さ
せ、この電極上にポリイミドコーティング剤(デュポン
社製品パイラリンSP P1-2570-Dを10秒間スピンコート
し、100℃、3分間-140℃、3分間のプリベークを行っ
た。更に、ポジ型のフォトレジスト(東京応化製品OFPR-
800)をスピンコートし、85℃、30分間のプリベーク、露
光、現像およびレジスト除去を行った後、200℃の空気
中で30分間および350℃の窒素ガス雰囲気中で30分間の
熱処理をして、図3(b)に示される形状のポリイミド薄
膜(膜厚0.5μm)を形成させた。
Example 2 A lower electrode was formed on a glass substrate in the same manner as in Example 1, and a polyimide coating agent (Pyrarin SP P1-2570-D manufactured by DuPont Co., Ltd.) was spin-coated on this electrode for 10 seconds, and the temperature was raised to 100 ° C. Prebaking was performed for 3 minutes at -140 ° C for 3 minutes, and positive photoresist (Tokyo Ohka Products OFPR-
800) by spin coating, pre-baking at 85 ° C for 30 minutes, exposure, development and resist removal, followed by heat treatment at 200 ° C in air for 30 minutes and 350 ° C in nitrogen gas atmosphere for 30 minutes. A polyimide thin film (film thickness 0.5 μm) having the shape shown in FIG. 3B was formed.

【0016】このポリイミド薄膜を、ガーゼを用いて一
定方向に擦するラビング操作を10回適用した後、メタル
マスクによるマスキングを行い、芳香族ポリアミド(ケ
ブラー49)を蒸着させて、ポリイミド薄膜と同様形状の
芳香族ポリアミド薄膜(膜厚1.7μm)を形成させた。
The rubbing operation of rubbing the polyimide thin film in a certain direction with gauze was applied 10 times, masking was performed with a metal mask, and aromatic polyamide (Kevlar 49) was vapor-deposited to have the same shape as the polyimide thin film. The aromatic polyamide thin film (thickness: 1.7 μm) was formed.

【0017】更に、Auを蒸着させ、膜厚100Åの上部電
極を、図3(c)に示される形状に形成させた。
Further, Au was vapor-deposited to form an upper electrode having a film thickness of 100 Å in the shape shown in FIG. 3 (c).

【0018】上記各実施例で得られた静電容量式湿度セ
ンサについて、次の条件下で相対湿度に対する静電容量
の変化を測定すると、図1のグラフに示されるような結
果が得られ、そこに良好な相関関係が確認された。 恒湿槽:神栄製分流式精密湿度発生器 測定器:YHP製LCRメータ 条 件:30℃、1V、1KHz印加
With respect to the capacitance type humidity sensor obtained in each of the above examples, when the change in capacitance with respect to relative humidity was measured under the following conditions, the results shown in the graph of FIG. 1 were obtained, A good correlation was confirmed there. Constant humidity chamber: Divergent precision humidity generator made by Shinei Measuring instrument: LCR meter made by YHP Condition: 30 ° C, 1V, 1KHz applied

【0019】また、これらの静電容量式湿度センサにつ
いて、60℃-90%RH、1000時間という高温高湿環境下での
安定性を相対湿度のずれ(容量のドリフト量を相対湿度
換算したときのずれ;ドリフト量が小さい程安定性が良
い)として測定すると、実施例1では4%RH、また実施例
2では3%RH以内の変化量であった。
With respect to these capacitance type humidity sensors, the stability in the high temperature and high humidity environment of 60 ° C.-90% RH and 1000 hours was measured as relative humidity deviation (when the capacitance drift amount is converted to relative humidity). Deviation; the smaller the drift amount, the better the stability), and the change amount was 4% RH in Example 1 and within 3% RH in Example 2.

【0020】これに対して、実施例2において2.5μmの
ポリイミド薄膜を形成させた後、配向処理および芳香族
ポリアミド薄膜の形成を行わずに、ポリイミド薄膜を感
湿膜に用いた静電容量式湿度センサでは、その相対湿度
のずれは5%RHであった。
On the other hand, in Example 2, after forming the polyimide thin film of 2.5 μm, the polyimide thin film was used as the moisture sensitive film without the alignment treatment and the formation of the aromatic polyamide thin film. The humidity sensor had a relative humidity deviation of 5% RH.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例1〜2における静電容量式湿度センサの
相対湿度と静電容量との関係を示すグラフである。
FIG. 1 is a graph showing the relationship between the relative humidity and the capacitance of a capacitance type humidity sensor in Examples 1 and 2.

【図2】従来の静電容量式湿度センサの製造順次を示す
斜視図である。
FIG. 2 is a perspective view showing a manufacturing sequence of a conventional capacitance type humidity sensor.

【図3】従来の他の静電容量式湿度センサの製造順次を
示す斜視図である。
FIG. 3 is a perspective view showing a manufacturing sequence of another conventional capacitance type humidity sensor.

【符号の説明】[Explanation of symbols]

21,31 絶縁性基板 23,34 下部電極 24,35 芳香族ポリアミド薄膜(およびポリイミド
薄膜) 25,36 上部電極
21, 31 Insulating substrate 23, 34 Lower electrode 24, 35 Aromatic polyamide thin film (and polyimide thin film) 25, 36 Upper electrode

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 絶縁性基板上に下部電極、高分子感湿膜
および上部電極を順次形成させた湿度センサにおいて、
高分子感湿膜として芳香族ポリアミド薄膜が用いられた
静電容量式湿度センサ。
1. A humidity sensor in which a lower electrode, a polymer moisture sensitive film and an upper electrode are sequentially formed on an insulating substrate,
A capacitance type humidity sensor that uses an aromatic polyamide thin film as a polymer moisture sensitive film.
【請求項2】 下部電極-芳香族ポリアミド薄膜間に、
配向処理されたポリイミド薄膜を形成させた請求項1記
載の静電容量式湿度センサ。
2. Between the lower electrode and the aromatic polyamide thin film,
The capacitance type humidity sensor according to claim 1, wherein a polyimide thin film subjected to orientation treatment is formed.
JP19417893A 1993-07-09 1993-07-09 Capacitance type humidity sensor Pending JPH0727733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19417893A JPH0727733A (en) 1993-07-09 1993-07-09 Capacitance type humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19417893A JPH0727733A (en) 1993-07-09 1993-07-09 Capacitance type humidity sensor

Publications (1)

Publication Number Publication Date
JPH0727733A true JPH0727733A (en) 1995-01-31

Family

ID=16320234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19417893A Pending JPH0727733A (en) 1993-07-09 1993-07-09 Capacitance type humidity sensor

Country Status (1)

Country Link
JP (1) JPH0727733A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069225A1 (en) * 2000-03-16 2001-09-20 Mitsui Chemicals, Inc. Capacitance type humidity sensor
JP2002243689A (en) * 2001-02-15 2002-08-28 Denso Corp Capacity-type humidity sensor and method for manufacturing the same
FR2972261A1 (en) * 2011-03-03 2012-09-07 Commissariat Energie Atomique HUMIDITY SENSOR COMPRISING AS A ABSORBENT MOISTURE LAYER A POLYMERIC LAYER COMPRISING A MIXTURE OF POLYAMIDES

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069225A1 (en) * 2000-03-16 2001-09-20 Mitsui Chemicals, Inc. Capacitance type humidity sensor
JP2002243689A (en) * 2001-02-15 2002-08-28 Denso Corp Capacity-type humidity sensor and method for manufacturing the same
FR2972261A1 (en) * 2011-03-03 2012-09-07 Commissariat Energie Atomique HUMIDITY SENSOR COMPRISING AS A ABSORBENT MOISTURE LAYER A POLYMERIC LAYER COMPRISING A MIXTURE OF POLYAMIDES
WO2012117104A1 (en) * 2011-03-03 2012-09-07 Commissariat à l'énergie atomique et aux énergies alternatives Moisture sensor including, as a moisture-absorbing layer, a polymer layer including a mixture of polyamides
US9134281B2 (en) 2011-03-03 2015-09-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Moisture sensor including, as a moisture-absorbing layer, a polymer layer including a mixture of polyamides

Similar Documents

Publication Publication Date Title
KR101093612B1 (en) The capacitance type humidity sensor and fabrication method thereof
KR100488432B1 (en) Capacitance type humidity sensor with passivation layer
JPS62145150A (en) Gas-sensor device
US5471723A (en) Methods of manufacturing thin-film absolute pressure sensors
Lee et al. Nano-grass polyimide-based humidity sensors
KR100965835B1 (en) Fabricating method for capacitor type polymer sensor for measuring humidity and the same
EP0783686A1 (en) Method and device for gas sensing
GB2145282A (en) Humidity sensor
JPH0727733A (en) Capacitance type humidity sensor
KR20150061683A (en) Electrode structure for capacitive biosensor having interdigitated electrode, method for manufacturing the electrode structure, and capacitive biosensor having the electrode structure
JP3084735B2 (en) Capacitive humidity sensor
JPH10267720A (en) Sensor with thin film element
JPS61181104A (en) Platinum temperature measuring resistor
JPH10232213A (en) Manufacture of humidity sensor
JPH05312754A (en) Humidity sensor
JPH04318450A (en) Electrostatic capacitance-type humidity sensor
JPH06148122A (en) Humidity detecting element
JPH0618465A (en) Complex sensor
JPH0210146A (en) Humidity sensing element and its operating circuit
JP2004177405A (en) Humidity detecting device of electrical capacitance type and method of manufacturing the same
JPH01121745A (en) Thin film moisture sensitive element
JP3241190B2 (en) Capacitive humidity sensor
JPH07128278A (en) Ion detecting device
JPS6395347A (en) Moisture sensor
JPH04110762A (en) Electrostatic capacity type humidity sensor