JPH07273369A - Optical semiconductor device - Google Patents

Abstract

PURPOSE:To make a device by a simple structure at low cost and to increase the light take-out efficiency of the device. CONSTITUTION:An optical semiconductor device 10 has a semiconductor substrate 11, a composition inclined layer 12, a first clad layer 13, an active layer 14, and a second clad layer 15. A hollow electrode 17 is formed on the second clad layer 15 and a disc-like electrode 16 is formed on the semiconductor substrate 11 which is on one side of the optical semiconductor device opposite to the one where the hollow electrode 17 is formed. Light is taken out from the surface of the semiconductor substrate 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device which has a high luminous efficiency and is capable of efficiently extracting light to the outside, which is used for a display of numbers and letters, a visible light lamp, a light emitting diode for optical communication and the like. is there.

[0002]

2. Description of the Related Art Recently, an LED having a structure shown in FIG. 5 is used as an optical semiconductor device. FIG. 5 is a sectional view of the LED. The LED 1 has an LED chip 3 formed on the semiconductor substrate 2, an electrode 4 formed on the surface of the LED chip 3, and an electrode 5 formed on the lower surface of the semiconductor substrate 2. The LED chip 3 has an active layer 3a in the middle in the vertical direction, and forms a so-called double hetero (DH) structure.

Next, the operation of this conventional configuration will be described. According to the LED 1 configured as described above, by applying a voltage between the electrode 4 formed on the surface of the LED chip 3 and the electrode 5 provided on the lower surface of the semiconductor substrate 2, for example, as shown in FIG. A current flows from the electrode 4 to the electrode 5 as indicated by the arrow. Then, electrons or holes that are carriers are injected through the pn junction by this current, and are recombined in the active layer 3a of the LED chip 3 to emit light. The light from the active layer 3a is emitted from the LED
The light is emitted from the upper surface of 1, that is, the surface of the LED chip 3 to the outside.

In this case, the current flowing from the electrode 4 to the electrode 5 flows so that the resistance value of the path is minimized, that is, the shortest distance is taken. By the way, the electrode 4 is
It is located near the center of the surface of the LED chip 3. Therefore, the carriers injected into the active layer 3a are concentrated immediately below the electrode 4 in the active layer 3a. Therefore, the light emission of the active layer 3a is indicated by the symbol A in FIG. 5, and the light emission intensity is maximum in the region corresponding to the electrode 4 and deviates from the electrode 4 as shown in the graph of FIG. And it drops sharply. Figure 6 shows this electrode and LED
It is a figure which shows the relationship with the light emission intensity of.

Further, light is emitted from the surface of the LED chip 3, but the electrode 4 formed on the surface of the LED chip 3 blocks the light. Therefore, as for the light emission characteristic of the LED 1, since the light emission intensity to the outside becomes zero in the region of the electrode 4 where the light emission intensity is maximum, only the shaded portion in FIG. 6 is taken out to the outside. . Therefore, there is a problem that the efficiency of extracting light to the outside is extremely low.

In order to solve such a problem, for example, an LE having a structure as shown in FIG. 7 and having improved light extraction efficiency.
D is known. FIG. 7 is a cross-sectional view of an LED having a current blocking layer, and the LED 6 has a structure different from that of the LED 1 in FIG. 5 in that a current blocking layer 3b is provided above the active layer 3a in the LED chip 3. Has become. Island-shaped high resistance regions 3c are formed corresponding to the electrodes 4 in the current blocking layer 3b.

According to this structure, when a voltage is applied to the electrode 4, the current circumvents the high resistance region 3c of the current blocking layer 3b and circulates to the periphery, and the central portion of the active layer 3a that does not contribute to the emission of light to the outside. Does not flow to. Therefore, the light emitting portion of the active layer 3a is indicated by the symbol B in FIG.
The luminous efficiency with respect to the injection current is improved.

[0008]

However, in the LED 6 having such a structure, when the current blocking layer 3b is formed, the current blocking layer 3b is formed in order to define the high resistance region 3c corresponding to the electrode 4. In doing so, an etching step for selectively removing a portion other than the high resistance region 3c is required. Therefore, in the crystal growth process of the LED chip 3 on the semiconductor substrate 2, the crystal growth is interrupted midway to form the current blocking layer 3b, and then the crystal growth is performed again. Therefore, there is a problem in that the use efficiency of the crystal growth apparatus in the crystal growth step is reduced and an additional etching step is required, resulting in an increase in the number of steps and an increase in manufacturing cost.

In order to solve such a problem, the first object of the present invention is to provide an optical semiconductor device capable of enhancing the efficiency of extracting light to the outside. A second object is to provide an optical semiconductor device in which injected carriers can be efficiently recombined. A third object of the present invention is to provide an optical semiconductor device capable of relaxing the lattice mismatch of the double heterojunction structure and improving the light emission efficiency. A fourth object is to provide an optical semiconductor device having an ideal electrode pattern that does not block the emitted light.

[0010]

In order to achieve these objects, an optical semiconductor device according to claim 1 corresponding to the first object comprises a semiconductor substrate transparent to an emission wavelength and a semiconductor substrate on the semiconductor substrate. An optical semiconductor device having a first cladding layer, an active layer, and a second cladding layer, which are sequentially stacked,
It has a perforated electrode formed on the surface of the second cladding layer and an electrode formed on the semiconductor substrate corresponding to the perforated electrode, and the semiconductor substrate having the electrode is used as a current diffusion layer and a light extraction surface. .

An optical semiconductor device according to a second aspect of the present invention, which has a second object, has a larger energy gap than the active layer sandwiched between the first cladding layer and the second cladding layer.

An optical semiconductor device according to claim 3 corresponding to the third object is an optical semiconductor device having a first clad layer, an active layer and a second clad layer on a semiconductor substrate. The compositional gradient layer is provided between the first cladding layer and the first cladding layer.

According to a fourth aspect of the optical semiconductor device of the present invention, the perforated electrode formed on the surface of the optical semiconductor device and the electrode formed on the lower surface of the semiconductor substrate have centers of symmetry. It is configured to be formed.

[0014]

In the optical semiconductor device according to claim 1 having such a structure, when a voltage is applied to the perforated electrode, a current flows from the perforated electrode to the electrode formed on the lower surface of the semiconductor substrate, and the hole of the optical semiconductor device is formed. Carriers are injected into the portion close to the open electrode. The partially injected carriers are recombined in the active layer to emit light, and the light is emitted to the outside. Since there is no electrode on a part of the semiconductor substrate surface in the light emitting direction, the light can be effectively taken out without being blocked.

In the optical semiconductor device according to the second aspect, when carriers are injected, they recombine in the active layer and emit light, but the light emitted in the active layer is not absorbed by the cladding layer. Therefore, the luminous efficiency of the injected carriers is remarkably improved, and the light can be efficiently emitted to the outside.

In the optical semiconductor device according to the third aspect, the composition gradient layer is formed between the semiconductor substrate and the cladding layer, so that the lattice mismatch due to the double heterojunction in which the active layer is sandwiched between the cladding layers is caused. Can be relaxed. Therefore, since the crystal defects on the heterojunction surface are reduced, the confinement effect of light at the same time as the confinement of injected carriers is improved, the recombination efficiency of carriers is increased, and the light emission efficiency can be remarkably improved.

In the optical semiconductor device according to the fourth aspect, the perforated electrode corresponding to the light emitting portion and the electrode formed on the lower surface of the semiconductor substrate that blocks light are formed in a shape that does not mutually block light emission. You can Therefore, an ideal electrode that does not block light can be formed, and light can be efficiently extracted to the outside.

In the optical semiconductor device according to the first to fourth aspects, the crystal growth process when forming the optical semiconductor device can be continuously performed without interruption in the middle, and the etching process and the like are unnecessary. Become. Therefore, the optical semiconductor device can be easily manufactured at low cost without increasing the number of steps.

[0019]

Embodiments of the optical semiconductor device of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a sectional view showing the configuration of the first embodiment of this optical semiconductor device. FIG. 2 is a schematic diagram of an energy structure showing the energy gap Eg. FIG. 3 is a perspective view of this embodiment. In FIG. 1, an optical semiconductor device 10 includes a semiconductor substrate 11, a composition gradient layer 12, a first cladding layer 13, an active layer 14, and a second layer.
The second clad layer 15 is provided with a perforated electrode 17, and the disc-shaped electrode 16 is provided on the semiconductor substrate 11 on the opposite side of the optical semiconductor device corresponding to the perforated electrode 17. Is formed.

The optical semiconductor device 10 is, for example, a MOCV.
It is manufactured by the D method, LPE method, VPE method, MBE method, or the like. In this embodiment, GaP is used as the semiconductor substrate 11. The semiconductor substrate 11 is selected to be transparent to the emission wavelength.
s, GaAsP, GaAlAs, GaInP, InAl
A III-V group compound semiconductor such as P, GaN, or SiC is often used. Further, a II-VI group compound semiconductor substrate such as ZnS or ZnSe can also be used.

The optical semiconductor device 10 of this embodiment is an example.
For example, by MOCVD method, epitaxy is sequentially performed as follows.
Shall grow. First of all, of the n type with a thickness of 300 μm
On the GaP semiconductor substrate 11, n-type GaP to n
Type of In_0.3(Ga_0.3Al_0.7)_0.7Set to P in stages
The compositionally graded layer 12 having different composition is formed to have a thickness of about 10 μm.
N-type In on the composition gradient layer 12 of_0.3(Ga_0.3A
l_0.7)_0.7The first clad layer 13 of P is epitaxially grown to about 10 μm.
Tx growth, then i-type In_0.3 Ga
_0.7The P active layer 14 is epitaxially grown to about 1 μm.
Let And p-type In_0.3(Ga_0.3Al_0.7)
_0.7The second clad layer 15 of P is epitaxially formed by about 10 μm.
Grow.

At this time, in order to grow n-type and p-type epitaxial layers and form a pn junction, doping is simultaneously performed. Further, the composition ratio of the InGaAl mixed crystal is determined by the value of the energy gap and the conditions for lattice matching. Furthermore, good crystal growth conditions and lattice matching conditions also depend on the process parameters of crystal growth such as temperature, pressure, raw material gas flow rate and raw material gas partial pressure, and these parameters must be determined optimally. is there. In this embodiment, the ternary mixed crystal is used, but in the case of a quaternary mixed crystal of InGaAsP using InP for the semiconductor substrate, crystal growth is possible by controlling the energy gap and the lattice matching condition independently. The crystal growth method is the same for the n-type and p-type conductivity types of this embodiment that are reversed.

As described above, crystal growth is performed while satisfying the lattice matching condition. However, when the compositionally graded layer 12 is formed, the lattice mismatch between the first cladding layer 13, the active layer 14, and the second cladding layer 15 is relaxed. You can In the energy gap Eg of this embodiment, the active layer 14 has the other clad layers 13, 1
It is designed to be minimum than 5. That is, as shown in FIG. 2, the active layer has a double heterojunction structure in which the active layer is sandwiched between the first cladding layer and the second cladding layer having a larger energy gap.

Since the semiconductor substrate is held and epitaxially grown on the surface, there is no epitaxial growth layer on the bottom surface of the semiconductor substrate. The semiconductor substrate is turned upside down with the epitaxial growth layer on the lower side, the semiconductor substrate surface is used as the light extraction surface, and the circular ohmic electrode 16 is formed in the center.
An ohmic perforated electrode 17 is formed on the surface of the second cladding layer 15 of the epitaxially grown layer, which is the back surface, facing the electrode. These electrodes are formed by vapor deposition, paste, etc., and an Au alloy is used. Change to Au alloy A
1 or Cu alloy may be used. Alternatively, a semiconductor having good electric conductivity may be used as an electrode in the final step of crystal growth.

Next, the operation of this embodiment will be described. With reference to FIGS. 1 and 3, when a current is injected from the perforated electrode 17 into the optical semiconductor device 10, carriers are injected into the active layer through the first cladding layer, and light is emitted by recombination of the carriers. Regarding the injection current, the semiconductor substrate 1
1 is as thick as 300 μm and the resistivity is relatively small, this substrate serves as a current spreading layer. Also, the perforated electrode 1
Since there is no electrode portion of the electrode 16 at a position facing 7 the current flows as indicated by the arrow in FIG. Therefore, the active layer 1 located below the electrode 16 of the semiconductor substrate 11 for extracting light.
The emission from 4 can be made extremely low. In addition, the carriers recombine in the active layer 14 to emit light, but the light is emitted in the direction 1
Since 8 does not have an electrode portion that blocks light, the efficiency of extracting light to the outside can be significantly improved.

Furthermore, since the current is injected from the electrode 17 on the surface of the second cladding layer 15 which is as thin as 10 μm, the carriers due to this current effectively flow into the active layer 14, and therefore the recombination efficiency of the carriers with respect to the injection current. Is improved, and as a result, the luminous efficiency is significantly improved. Further, since the light emitting region can be formed near the perforated electrode 17, the light emitting region corresponding to the pattern of the perforated electrode 17 can be provided. A of FIG. 1 shows a light emitting region of the active layer 14 which emits light by this injection current.

When the injection current flows, referring to the energy structure of FIG. 2, the carriers supplied from the second cladding layer 15 side cannot exceed the potential of the composition gradient layer 12 and the well type of the active layer 14 is formed. Carriers that are effectively confined in the potential and are supplied from the semiconductor substrate 11 side are effectively recombined between the energy bands of the well-type potential of the active layer 14 and emit light at a wavelength corresponding to the energy difference between the bands. . Light of this wavelength is emitted by the active layer 14
The energy gap of the first and second cladding layers 13,
Since it is designed to be extremely small as compared with 15, it is not absorbed by the first and second cladding layers 13 and 15. Therefore, the coupling efficiency of the injected carriers can be increased, the emission center can be localized, and the light can be efficiently emitted to the outside.

Further, since the compositionally graded layer 12 can alleviate the lattice mismatch between the first cladding layer 13, the active layer 14, and the second cladding layer 15, crystal defects that may serve as an emission center at their junction surface are eliminated. Can be reduced. In this double heterojunction structure, the confinement of injected carriers and the confinement of light at the same time are improved. Therefore, it is possible to improve the light emission efficiency with respect to the injected current and to effectively emit the desired monochromatic light.

Next, a second embodiment will be described. FIG. 4 is a perspective view of an optical semiconductor device 20 of the second embodiment in which an electrode pattern having a center of symmetry is formed. The structure is the same as that of the first embodiment except for the electrode pattern. As shown in FIG. 4, in this optical semiconductor device 20, the electrode pattern of the perforated electrode 21 having a predetermined shape and the electrode 22 having a corresponding shape has a symmetrical center. It can be formed to have a center of symmetry with respect to the semiconductor device, and the light can be extracted in a uniform direction.

In addition, the perforated electrode 21 for injecting a current and the light emitting region of the active layer 14 sandwich the second clad layer 15 between them.
Since it is close to μm, the pattern of the light emitting region in the active layer 14 can be determined by the electrode pattern of the perforated electrode 21. Therefore, it becomes possible to take out a predetermined pattern of light to the outside.

[0031]

As can be understood from the above description, in the optical semiconductor device according to claim 1, when a voltage is applied to the perforated electrode, a current flows from the perforated electrode to the electrode formed on the lower surface of the semiconductor substrate. Carriers are injected into a portion of the optical semiconductor device near the perforated electrode, and the partially injected carriers are recombined in the active layer to emit light, which is emitted to the outside. Since there is no electrode on a part of the surface of the semiconductor substrate in the emitting direction, there is an effect that the light can be effectively extracted to the outside without blocking the light.

In the optical semiconductor device according to the second aspect, when carriers are injected, they are recombined in the active layer and emit light, but the light emitted in the active layer is not absorbed by the cladding layer, so that the emission efficiency of the injected carriers is remarkably high. The effect is that the light can be efficiently emitted to the outside.

In the optical semiconductor device according to the third aspect, since the lattice mismatch of the double heterojunction is alleviated by forming the compositionally graded layer, crystal defects at the heterojunction surface can be reduced, so that the carrier recombination efficiency is improved. It has an effect that the luminous efficiency can be remarkably improved.

In the optical semiconductor device according to the fourth aspect, the perforated electrode corresponding to the light emitting portion and the electrode formed on the lower surface of the semiconductor substrate that blocks light are formed in a shape that does not mutually block the emission of light. Therefore, it is possible to form an ideal electrode that does not block light, and it is possible to efficiently extract light to the outside.

Further, in the optical semiconductor device according to the first to fourth aspects, the crystal growth process for forming the optical semiconductor device can be continuously performed without interruption in the middle thereof, and the etching process and the like are not necessary. Therefore, it becomes possible to easily manufacture an optical semiconductor device at low cost without increasing the cost.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a first embodiment of an optical semiconductor device of the present invention.

2 is a schematic diagram of an energy structure showing an energy gap of the optical semiconductor device of FIG.

FIG. 3 is a perspective view of the optical semiconductor device of FIG.

FIG. 4 is a perspective view of an optical semiconductor device according to a second embodiment in which an electrode pattern having a center of symmetry is formed.

FIG. 5 is a cross-sectional view of a conventional LED.

6 is a diagram showing the relationship between the electrodes of FIG. 5 and the emission intensity of LEDs.

FIG. 7 is a cross-sectional view showing another example of a conventional LED.

[Explanation of symbols]

 10 Optical Semiconductor Device 11 Semiconductor Substrate 12 Composition Gradient Layer 13 First Cladding Layer 14 Active Layer 15 Second Cladding Layer 16 Electrode 17 Perforated Electrode 18 Light Emitting Direction 20 Optical Semiconductor Device 21 Perforated Electrode 22 Electrode

Claims (4)

[Claims] 1. A semiconductor substrate transparent to an emission wavelength,
An optical semiconductor device having a first clad layer, an active layer, and a second clad layer, which are sequentially stacked on this semiconductor substrate, and which corresponds to a perforated electrode formed on the surface of the second clad layer and the perforated electrode. And an electrode formed on the semiconductor substrate, and the semiconductor substrate having the electrode is used as a current diffusion layer and a light extraction surface. 2. The optical semiconductor device according to claim 1, wherein the first cladding layer and the second cladding layer have a larger energy gap than the active layer sandwiched therebetween. 3. An optical semiconductor device having a first clad layer, an active layer and a second clad layer on a semiconductor substrate, the composition gradient layer being provided between the semiconductor substrate and the first clad layer. The optical semiconductor device according to claim 1, which is characterized in that. 4. The perforated electrode formed on the surface of the optical semiconductor device and the electrode formed on the lower surface of the semiconductor substrate are formed so as to have a center of symmetry. Optical semiconductor device.