JPH07263230A - Miniature transformer - Google Patents

Miniature transformer

Info

Publication number
JPH07263230A
JPH07263230A JP7783394A JP7783394A JPH07263230A JP H07263230 A JPH07263230 A JP H07263230A JP 7783394 A JP7783394 A JP 7783394A JP 7783394 A JP7783394 A JP 7783394A JP H07263230 A JPH07263230 A JP H07263230A
Authority
JP
Japan
Prior art keywords
spiral
spiral electrode
transformer
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7783394A
Other languages
Japanese (ja)
Inventor
Takeshi Ikeda
毅 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7783394A priority Critical patent/JPH07263230A/en
Publication of JPH07263230A publication Critical patent/JPH07263230A/en
Pending legal-status Critical Current

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  • Coils Or Transformers For Communication (AREA)

Abstract

PURPOSE:To provide a miniature transformer which can be built in as a part of an integrated circuit. CONSTITUTION:A first line of spiral electrode 3 is formed on the surface of an insulating board 1 and an insulating thin film 4 is formed on the spiral electrode 3. A second line of spiral electrode 5 is then formed between the adjacent electrodes of the first line of spiral electrode 3 on the insulating thin film 4 and the insulating board 1 while being superposed partially on the first line of spiral electrode 3. Two lines of spiral electrodes 3, 5 serve as primary and secondary coils, respectively. A magnetic core may be disposed in the center of the spiral electrodes 3, 5 or a magnetic material may be employed for the insulating board 1 in order to magnetically couple the primary and secondary coils tightly.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、変成器に関し、特
に、薄膜製法の技術によって超小型に形成し得るもの
で、集積回路の一部として組み込むことが可能であっ
て、高周波信号の伝達に適した小型変成器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transformer, and more particularly to a transformer which can be formed in a very small size by a thin film manufacturing technique and can be incorporated as a part of an integrated circuit for transmitting a high frequency signal. A suitable small transformer.

【0002】[0002]

【従来の技術】変成器は、直流的に絶縁して電力の伝達
や、信号の伝達などの各種の分野において利用されてい
る。
2. Description of the Related Art Transformers are used in various fields such as electric power transmission and signal transmission after being insulated from a direct current.

【0003】[0003]

【発明が解決しようとする課題】近年、各種の電子回路
が集積化されて小型化されているが、変成器は小型に作
ることが困難であったので、変成器を集積回路に含ませ
ることなく、外付け部品として取り付けていた。そこ
で、この発明は、集積回路の一部として組み込むことが
可能な小型変成器を得ることを目的として考えられたも
のである。
In recent years, various electronic circuits have been integrated and miniaturized. However, it is difficult to make the transformer small, so that the transformer should be included in the integrated circuit. Instead, it was installed as an external component. Therefore, the present invention was conceived for the purpose of obtaining a small-sized transformer that can be incorporated as a part of an integrated circuit.

【0004】[0004]

【課題を解決するための手段】絶縁基板の表面に第1条
のスパイラル状電極を形成し、このスパイラル状電極上
および絶縁基板上に絶縁薄膜を形成し、この絶縁薄膜上
に、第1条のスパイラル状電極の隣接する電極間に配置
され、少なくともその一部分が第1条のスパイラル状電
極と重なるように第2条のスパイラル状電極を形成し、
2条のスパイラル状電極をそれぞれ1次コイルおよび2
次コイルとする。
A first spiral electrode is formed on a surface of an insulating substrate, an insulating thin film is formed on the spiral electrode and the insulating substrate, and the first thin film is formed on the insulating thin film. The spiral electrode of the second section is formed so as to be disposed between the adjacent electrodes of the spiral electrode of, and at least a part of the spiral electrode overlaps with the spiral electrode of the first section,
The two spiral electrodes are connected to the primary coil and the secondary coil, respectively.
Next coil.

【0005】スパイラル状電極の中央部に磁芯を配置し
り、絶縁基板として磁性材料を用いて1次コイルと2次
コイルの磁気的な結合を密にする。
A magnetic core is arranged at the center of the spiral electrode, and a magnetic material is used as an insulating substrate to close the magnetic coupling between the primary coil and the secondary coil.

【0006】[0006]

【実施例】この発明の変成器の実施例を製造工程順に説
明すると、図1の組立図に示すように、(1) まず、シリ
コン・ウエハ、ガラス、セラミックなどの絶縁基板を用
意する。特に、絶縁基板には、バルク抵抗が大きい高純
度のシリコン・ウエハ1が適している。
EXAMPLE An example of the transformer of the present invention will be described in the order of manufacturing steps. As shown in the assembly diagram of FIG. 1, (1) first, an insulating substrate such as a silicon wafer, glass, or ceramic is prepared. In particular, a high-purity silicon wafer 1 having a large bulk resistance is suitable for the insulating substrate.

【0007】(2) このシリコン・ウエハ1の表面に化学
気相法(CVD)によって第1のシリコン酸化膜(Si
2膜)2を形成したのち、(3) この第1のシリコン酸
化膜2の上に、次の化学気相法の工程に耐え得る金属、
例えば、金、タングステン、モリブデン、タンタル、ニ
オブなどの第1の金属膜を蒸着し、(4) 金属膜上に、フ
ォトレジストの1条のスパイラル状のパターンを形成
し、(5) このフォトレジストをマスクにして、第1条の
スパイラル状電極3を形成したのち、フォトレジストを
洗い落とす。この第1条のスパイラル状電極3は、外側
および内側に端子部31、32を有している。
(2) A first silicon oxide film (Si) is formed on the surface of the silicon wafer 1 by chemical vapor deposition (CVD).
(3) After forming the O 2 film) 2, (3) a metal capable of withstanding the following chemical vapor deposition process on the first silicon oxide film 2,
For example, a first metal film of gold, tungsten, molybdenum, tantalum, niobium, or the like is deposited, (4) a single spiral pattern of photoresist is formed on the metal film, and (5) this photoresist is formed. Is used as a mask to form the first spiral electrode 3 and then the photoresist is washed off. The first spiral electrode 3 has terminal portions 31 and 32 on the outer side and the inner side.

【0008】(6) 第1条のスパイラル状電極3および露
出している第1のシリコン酸化膜2の上に表面に化学気
相法によって第2のシリコン酸化膜(SiO2膜)4を形
成したのち、(7) 第1条のスパイラル状電極3の外側お
よび内側の端子部31、32に当たる部分の第2のシリコン
酸化膜4をフォトエッチング法により除去して露出させ
て開口部41、42を形成し、(8) その上に第2の金属膜を
蒸着し、(9) この金属膜上において、既に形成されてい
る第1条のスパイラル状電極3の隣接する電極間の上
に、フォトレジストの1条のスパイラル状のパターンを
形成し、(10) このフォトレジストをマスクにして、第
1条のスパイラル状電極3の隣接する電極間に配置され
た第2条のスパイラル状電極5を形成したのち、フォト
レジストを洗い落とす。この第2条のスパイラル状電極
5は、外側におよび内側に端子部51、52を有している。
(6) A second silicon oxide film (SiO 2 film) 4 is formed on the surface of the first spiral electrode 3 and the exposed first silicon oxide film 2 by the chemical vapor deposition method. After that, (7) the second silicon oxide film 4 in the portions corresponding to the outer and inner terminal portions 31, 32 of the first spiral electrode 3 is removed by photoetching to expose the openings 41, 42. Is formed, and (8) a second metal film is vapor-deposited thereon, and (9) on the metal film, between the adjacent electrodes of the first-row spiral electrode 3 already formed, A single spiral pattern of photoresist is formed, and (10) a second spiral electrode 5 arranged between adjacent electrodes of the first spiral electrode 3 using this photoresist as a mask. After forming, the photoresist is washed off. The second spiral electrode 5 has terminal portions 51 and 52 on the outer side and the inner side.

【0009】このような一連の工程を経て、絶縁基板と
なるシリコン・ウエハ1上に形成された第1条および第
2条のスパイラル状電極3、5は、それぞれ1次コイル
および2次コイルとなって、変成器を構成する。
Through the series of steps described above, the first and second spiral electrodes 3 and 5 formed on the silicon wafer 1 serving as an insulating substrate respectively serve as a primary coil and a secondary coil. And form a transformer.

【0010】この変成器は、図2の断面図より明らかな
ように、第1条のスパイラル状電極3の隣接する電極間
に第2のスパイラル状電極5が配置されており、両スパ
イラル状電極3、5の磁気的な結合を密にすることがで
きる。
In this transformer, as is clear from the cross-sectional view of FIG. 2, the second spiral electrode 5 is arranged between the adjacent electrodes of the first spiral electrode 3, and both spiral electrodes are arranged. The magnetic coupling of 3, 5 can be made tight.

【0011】このように構成した小型変成器は、空芯で
あっても高周波信号を高効率で歪なく伝達することがで
きる。
The small-sized transformer having such a structure can transmit a high-frequency signal with high efficiency and without distortion even with an air core.

【0012】(他の実施例)以上の実施例においては、
2条のスパイラル状電極を1次コイルおよび2次コイル
としているが、隣接する電極間に3条以上のスパイラル
状電極を設けて、複数の多次コイルを有する変成器を構
成することができる。
(Other Embodiments) In the above embodiments,
Although the two spiral-shaped electrodes are the primary coil and the secondary coil, three or more spiral-shaped electrodes may be provided between adjacent electrodes to form a transformer having a plurality of multi-coil.

【0013】また、複数条のスパイラル状電極およびシ
リコン酸化膜を交互に多層化して形成し、シリコン酸化
膜のスルーホールを介して接続することにより、ターン
数の多い変成器を作ることができる。
Further, by forming a plurality of spiral electrodes and silicon oxide films alternately in multiple layers and connecting them through through holes of the silicon oxide film, it is possible to manufacture a transformer having a large number of turns.

【0014】巻回した複数条のスパイラル状電極の中央
部にフェライトなどの磁性材料を配置したり、変成器を
形成する絶縁基板として、シリコン・ウエハの代わりに
フェライトなどの磁性材料を使用すること、形成した変
成器の表面に磁性材料の薄膜を形成することなどによ
り、2つのスパイラル状電極の磁気的な結合を一層密に
することができる。
Disposing a magnetic material such as ferrite in the central portion of a spirally wound spiral electrode, or using a magnetic material such as ferrite instead of a silicon wafer as an insulating substrate for forming a transformer. By forming a thin film of a magnetic material on the surface of the formed transformer, the magnetic coupling between the two spiral electrodes can be made more dense.

【0015】[0015]

【発明の効果】以上の実施例に基づく説明から明らかな
ように、この発明の小型変成器によると、高周波信号の
伝達に適し、薄膜製法の技術によって集積回路と類似の
技術によって製造することができ、また、集積回路の一
部として組み込むことが可能な小型変成器を得ることが
できる。
As is clear from the description based on the above embodiments, the small transformer of the present invention is suitable for transmitting high frequency signals and can be manufactured by a technique similar to an integrated circuit by a thin film manufacturing technique. It is also possible to obtain a small transformer that can be incorporated as part of an integrated circuit.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の小型変成器の一実施例を示す組立
図、
FIG. 1 is an assembly diagram showing an embodiment of a small transformer of the present invention,

【図2】この発明の小型変成器の一実施例の断面図であ
る。
FIG. 2 is a sectional view of an embodiment of the small transformer of the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁基板 2、4 シリコン酸化膜 3、5 スパイラル状電極 31、32、51、52 端子部 1 Insulating substrate 2, 4 Silicon oxide film 3, 5 Spiral electrode 31, 32, 51, 52 Terminal part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板の表面に第1条のスパイラル状
電極を形成し、該スパイラル状電極上および上記絶縁基
板上に絶縁薄膜を形成し、該絶縁薄膜上に、上記第1条
のスパイラル状電極の隣接する電極間に配置され、少な
くともその一部分が上記第1条のスパイラル状電極と重
なるように第2条のスパイラル状電極を形成したことを
特徴とする小型変成器。
1. A first-row spiral electrode is formed on a surface of an insulating substrate, an insulating thin film is formed on the spiral electrode and the insulating substrate, and the first-spiral spiral is formed on the insulating thin film. A small-sized transformer, wherein the second spiral electrode is formed so as to be disposed between the adjacent electrodes of the linear electrode, and at least a part of the spiral electrode overlaps the first spiral electrode.
【請求項2】 スパイラル状電極の中央部に磁芯を配置
したことを特徴とする請求項1に記載の小型変成器。
2. The small transformer according to claim 1, wherein a magnetic core is arranged at the center of the spiral electrode.
【請求項3】 絶縁基板として磁性材料を用いたことを
特徴とする請求項1に記載の小型変成器。
3. The miniature transformer according to claim 1, wherein a magnetic material is used as the insulating substrate.
JP7783394A 1994-03-25 1994-03-25 Miniature transformer Pending JPH07263230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7783394A JPH07263230A (en) 1994-03-25 1994-03-25 Miniature transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7783394A JPH07263230A (en) 1994-03-25 1994-03-25 Miniature transformer

Publications (1)

Publication Number Publication Date
JPH07263230A true JPH07263230A (en) 1995-10-13

Family

ID=13645050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7783394A Pending JPH07263230A (en) 1994-03-25 1994-03-25 Miniature transformer

Country Status (1)

Country Link
JP (1) JPH07263230A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19627819B4 (en) * 1996-07-10 2005-12-01 Weiner, René Spool for a flat coil
EP1841049A1 (en) * 2006-03-28 2007-10-03 Infineon Technologies SensoNor AS Electromagnetic micro-generator
JP2008166476A (en) * 2006-12-28 2008-07-17 Fuji Electric Device Technology Co Ltd Thin film transformer and its manufacturing method
JP2014154869A (en) * 2013-02-14 2014-08-25 Murata Mfg Co Ltd Transformer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19627819B4 (en) * 1996-07-10 2005-12-01 Weiner, René Spool for a flat coil
EP1841049A1 (en) * 2006-03-28 2007-10-03 Infineon Technologies SensoNor AS Electromagnetic micro-generator
JP2007267590A (en) * 2006-03-28 2007-10-11 Infineon Technologies Sensonor As Electromagnetic micro generator
JP2008166476A (en) * 2006-12-28 2008-07-17 Fuji Electric Device Technology Co Ltd Thin film transformer and its manufacturing method
JP2014154869A (en) * 2013-02-14 2014-08-25 Murata Mfg Co Ltd Transformer
US9431163B2 (en) 2013-02-14 2016-08-30 Murata Manufacturing Co., Ltd. Transformer

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