JPH07230913A - Small-sized transformer - Google Patents

Small-sized transformer

Info

Publication number
JPH07230913A
JPH07230913A JP4177494A JP4177494A JPH07230913A JP H07230913 A JPH07230913 A JP H07230913A JP 4177494 A JP4177494 A JP 4177494A JP 4177494 A JP4177494 A JP 4177494A JP H07230913 A JPH07230913 A JP H07230913A
Authority
JP
Japan
Prior art keywords
spiral
spiral electrodes
transformer
electrodes
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4177494A
Other languages
Japanese (ja)
Inventor
Minoru Ikeda
稔 池田
Takeshi Ikeda
毅 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
N S SEIKO KK
Original Assignee
N S SEIKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by N S SEIKO KK filed Critical N S SEIKO KK
Priority to JP4177494A priority Critical patent/JPH07230913A/en
Publication of JPH07230913A publication Critical patent/JPH07230913A/en
Pending legal-status Critical Current

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Landscapes

  • Coils Or Transformers For Communication (AREA)

Abstract

PURPOSE:To obtain a small-sized transformer capable of being assembled in an integrated circuit as a part. CONSTITUTION:Two lines of spiral electrodes 32 and 35 for a first layer are formed in parallel on the surface of an insulating board 1, and on them an insulating thin film 4 having through holes 41 and 42 are formed. On this insulating thin film 4, two lines of spiral electrodes 52 and 55 for a second layer are formed in parallel. Then the spiral electrodes 32, 35, 52 and 55 for the first and second layers are connected by the use of through holes 41 and 42, and the respective sets of the two spiral electrodes are used as the primary and secondary coils of a transformer respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、変成器に関し、特
に、薄膜製法技術によって超小型に形成し得るもので、
集積回路の一部として組み込むことが可能であって、高
周波信号の伝達に適した小型変成器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transformer, and more particularly to a transformer which can be formed in a very small size by a thin film manufacturing technique
The present invention relates to a small transformer which can be incorporated as a part of an integrated circuit and is suitable for transmitting high frequency signals.

【0002】[0002]

【従来の技術】変成器は、直流的に絶縁して電力の伝達
や、信号の伝達などの各種の分野において利用されてい
る。
2. Description of the Related Art Transformers are used in various fields such as electric power transmission and signal transmission after being insulated from a direct current.

【0003】[0003]

【発明が解決しようとする課題】近年、各種の電子回路
が集積化されて小型化されているが、変成器は小型に作
ることが困難であったので、変成器を集積回路に含ませ
ることなく、外付け部品として取り付けていた。そこ
で、この発明は、集積回路の一部として組み込むことが
可能な小型変成器を得ることを目的として考えられたも
のである。
In recent years, various electronic circuits have been integrated and miniaturized. However, it is difficult to make the transformer small, so that the transformer should be included in the integrated circuit. Instead, it was installed as an external component. Therefore, the present invention was conceived for the purpose of obtaining a small-sized transformer that can be incorporated as a part of an integrated circuit.

【0004】[0004]

【課題を解決するための手段】絶縁基板の表面に1層目
の並行した2条のスパイラル状電極を形成し、その上に
スルーホールを有する絶縁薄膜を形成し、この絶縁薄膜
上に2層目の並行した2条のスパイラル状電極を形成
し、1層目および2層目のスパイラル状電極を上記スル
ーホールを介して接続して連続させ、2条のスパイラル
状電極をそれぞれ1次コイルおよび2次コイルとする。
[Means for Solving the Problems] First parallel two-row spiral electrodes are formed on the surface of an insulating substrate, an insulating thin film having through holes is formed thereon, and two layers are formed on the insulating thin film. The two parallel spiral-shaped electrodes of the eye are formed, and the spiral electrodes of the first and second layers are connected to each other through the through holes to make them continuous, and the two spiral-shaped electrodes are connected to the primary coil and the spiral coil, respectively. Use as a secondary coil.

【0005】スパイラル状電極の中央部に磁芯を配置し
たり、絶縁基板としてフェライトなどの磁性材料を用い
て、1次コイルと2次コイルの磁気的な結合を密にす
る。
A magnetic core is arranged at the center of the spiral electrode, and a magnetic material such as ferrite is used as an insulating substrate to make the magnetic coupling between the primary coil and the secondary coil dense.

【0006】[0006]

【実施例】この発明の変成器の実施例を製造工程順に説
明すると、図1の組立図に示すように、(1) まず、シリ
コン・ウエハ、ガラス、セラミックなどの絶縁基板を用
意する。特に、絶縁基板には、バルク抵抗が大きい高純
度のシリコン・ウエハ1が適している。
EXAMPLE An example of the transformer of the present invention will be described in the order of manufacturing steps. As shown in the assembly diagram of FIG. 1, (1) first, an insulating substrate such as a silicon wafer, glass, or ceramic is prepared. In particular, a high-purity silicon wafer 1 having a large bulk resistance is suitable for the insulating substrate.

【0007】(2) このシリコン・ウエハ1の表面に化学
気相法(CVD)によって第1のシリコン酸化膜(Si
2膜)2を形成したのち、(3) この第1のシリコン酸
化膜2の上に、次の化学気相法の工程に耐え得る金属、
例えば、金、タングステン、モリブデン、タンタル、ニ
オブなどの第1の金属膜を蒸着し、(4) 金属膜上に、フ
ォトレジストの並行した2条のスパイラル状のパターン
を形成し、(5) このフォトレジストをマスクにして、1
層目の2条のスパイラル状電極32、35を形成したのち、
フォトレジストを洗い落とす。この2条のスパイラル状
電極32、35は、外側に端子部31、34を有し、内側は終端
33、36している。
(2) A first silicon oxide film (Si) is formed on the surface of the silicon wafer 1 by chemical vapor deposition (CVD).
(3) After forming the O 2 film) 2, (3) a metal capable of withstanding the following chemical vapor deposition process on the first silicon oxide film 2,
For example, a first metal film of gold, tungsten, molybdenum, tantalum, niobium, or the like is vapor-deposited, and (4) two parallel spiral patterns of photoresist are formed on the metal film. (5) This 1 using the photoresist as a mask
After forming the second row spiral electrodes 32, 35,
Rinse the photoresist. These two strips of spiral electrodes 32, 35 have terminal portions 31, 34 on the outside and terminate on the inside.
I have 33, 36.

【0008】(6) 1層目のスパイラル状電極32、35およ
び露出している第1のシリコン酸化膜2の上に表面に化
学気相法によって第2のシリコン酸化膜(SiO2膜)4
を形成したのち、(7) 1層目の2条のスパイラル状電極
32、35の外側の端子部31、34と内側の終端部33、36に当
たる部分の第2のシリコン酸化膜4をフォトエッチング
法により除去して露出させてスルーホール41、42および
開口部43を形成し、(8) その上に第2の金属膜を蒸着
し、(9) 金属膜上に、フォトレジストの並行した2条の
スパイラル状のパターンを形成し、(10) このフォトレ
ジストをマスクにして、2層目の2条のスパイラル状電
極52、55を形成したのち、フォトレジストを洗い落と
す。この2条のスパイラル状電極52、55は、外側に端子
部51、54を有し、内側は終端53、56は、第2のシリコン
酸化膜4に設けたスルーホル41、42を介して1層目の2
条のスパイラル状電極32、35と接続されて連続させ、2
条のスパイラル状電極をそれぞれ1次コイルおよび2次
コイルとする。
(6) The second silicon oxide film (SiO 2 film) 4 is formed on the surface of the spiral-shaped electrodes 32, 35 of the first layer and the exposed first silicon oxide film 2 by the chemical vapor deposition method.
After forming (7) 1st layer 2 rows spiral electrode
The second silicon oxide film 4 at the portions corresponding to the outer terminal portions 31, 34 of the portions 32, 35 and the inner end portions 33, 36 is removed by photoetching and exposed to expose the through holes 41, 42 and the opening portions 43. Forming, (8) depositing a second metal film on it, (9) forming two parallel spiral patterns of photoresist on the metal film, (10) masking this photoresist Then, after forming the second layer of two spiral electrodes 52 and 55, the photoresist is washed off. The two strip-shaped spiral electrodes 52, 55 have terminal portions 51, 54 on the outer side, and the inner ends 53, 56 have one layer through the through holes 41, 42 provided on the second silicon oxide film 4. Eye 2
Connected with the spiral electrodes 32 and 35 of the strip to make them continuous, 2
The spiral electrodes of the strip are the primary coil and the secondary coil, respectively.

【0009】このような一連の工程を経て、絶縁基板と
なるシリコン・ウエハ1上に2条のコイル32、35および
52、55よりなる変成器を形成することができる。この変
成器は、図2の断面図より明らかなように、第1のスパ
イラル状電極32、52に隣接するスパイラル状電極は、必
ず第2のスパイラル状電極35、55となり、両スパイラル
状電極の磁気的な結合を密にすることができる。
Through such a series of steps, two coils 32, 35 and two coils are formed on the silicon wafer 1 serving as an insulating substrate.
A transformer consisting of 52, 55 can be formed. In this transformer, as is clear from the cross-sectional view of FIG. 2, the spiral electrodes adjacent to the first spiral electrodes 32, 52 are always the second spiral electrodes 35, 55, and both spiral electrodes are The magnetic coupling can be tight.

【0010】このように構成した小型変成器は、空芯で
あっても高周波信号を高効率で歪なく伝達することがで
きる。
The small-sized transformer having such a structure can transmit a high-frequency signal with high efficiency and without distortion even with an air core.

【0011】(他の実施例)以上の実施例においては、
2条のスパイラル状電極を1次コイルおよび2次コイル
としているが、3条以上のスパイラル状電極を設けて、
複数の多次コイルを有する変成器を構成することができ
る。
(Other Embodiments) In the above embodiments,
The two spiral electrodes are used as the primary coil and the secondary coil, but with three or more spiral electrodes,
A transformer having a plurality of multi-order coils can be constructed.

【0012】また、複数条のスパイラル状電極およびシ
リコン酸化膜を交互に多層化して形成し、シリコン酸化
膜のスルーホールを介して接続することにより、ターン
数の多い変成器を作ることができる。
Further, by forming a plurality of spiral electrodes and silicon oxide films alternately in multiple layers and connecting them through through holes of the silicon oxide film, it is possible to manufacture a transformer having a large number of turns.

【0013】巻回した複数条のスパイラル状電極の中央
部にフェライトなどの磁性材料を配置したり、変成器を
形成する絶縁基板として、シリコン・ウエハの代わりに
フェライトなどの磁性材料を使用すること、形成した変
成器の表面に磁性材料の薄膜を形成することなどによ
り、2つのスパイラル状電極の磁気的な結合を一層密に
することができる。
Disposing a magnetic material such as ferrite in the central portion of a plurality of spirally wound spiral electrodes, or using a magnetic material such as ferrite instead of a silicon wafer as an insulating substrate for forming a transformer. By forming a thin film of a magnetic material on the surface of the formed transformer, the magnetic coupling between the two spiral electrodes can be made more dense.

【0014】[0014]

【発明の効果】以上の実施例に基づく説明から明らかな
ように、この発明の小型変成器によると、高周波信号の
伝達に適し、薄膜製法の技術によって集積回路と類似の
技術によって製造することができ、また、集積回路の一
部として組み込むことが可能な小型変成器を得ることが
できる。
As is clear from the description based on the above embodiments, the small transformer of the present invention is suitable for transmitting high frequency signals and can be manufactured by a technique similar to an integrated circuit by a thin film manufacturing technique. It is also possible to obtain a small transformer that can be incorporated as part of an integrated circuit.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の小型変成器の一実施例を示す組立
図、
FIG. 1 is an assembly diagram showing an embodiment of a small transformer of the present invention,

【図2】この発明の小型変成器の一実施例の断面図であ
る。
FIG. 2 is a sectional view of an embodiment of the small transformer of the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁基板 2、4 シリコン酸化膜 31、34、51、54 端子部 32、35 52、55 2条のスパイラル状電極 41、42 スルーホール 1 Insulating substrate 2, 4 Silicon oxide film 31, 34, 51, 54 Terminals 32, 35 52, 55 2 spiral electrode 41, 42 Through hole

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板の表面に1層目の並行した複数
条のスパイラル状電極を形成し、その上にスルーホール
を有する絶縁薄膜を形成し、該絶縁薄膜上に2層目の並
行した複数条のスパイラル状電極を形成し、1層目およ
び2層目のスパイラル状電極を上記スルーホールを介し
て接続して連続させたことを特徴とする小型変成器。
1. A plurality of parallel spiral electrodes of a first layer are formed on a surface of an insulating substrate, an insulating thin film having through holes is formed on the spiral electrode, and a second layer of the spiral electrodes is arranged in parallel on the insulating thin film. A small transformer characterized in that a plurality of spiral electrodes are formed, and the spiral electrodes of the first layer and the second layer are connected to each other through the through holes to be continuous.
【請求項2】 スパイラル状電極の中央部に磁芯を配置
したことを特徴とする請求項1に記載の小型変成器。
2. The small transformer according to claim 1, wherein a magnetic core is arranged at the center of the spiral electrode.
【請求項3】 絶縁基板として磁性材料を用いたことを
特徴とする請求項1に記載の小型変成器。
3. The miniature transformer according to claim 1, wherein a magnetic material is used as the insulating substrate.
JP4177494A 1994-02-17 1994-02-17 Small-sized transformer Pending JPH07230913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4177494A JPH07230913A (en) 1994-02-17 1994-02-17 Small-sized transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4177494A JPH07230913A (en) 1994-02-17 1994-02-17 Small-sized transformer

Publications (1)

Publication Number Publication Date
JPH07230913A true JPH07230913A (en) 1995-08-29

Family

ID=12617732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4177494A Pending JPH07230913A (en) 1994-02-17 1994-02-17 Small-sized transformer

Country Status (1)

Country Link
JP (1) JPH07230913A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114932A (en) * 1997-12-12 2000-09-05 Telefonaktiebolaget Lm Ericsson Inductive component and inductive component assembly
JP2002541658A (en) * 1999-04-01 2002-12-03 ミッドコム インコーポレーテッド Multilayer type transformer and its manufacturing method
JP2008053613A (en) * 2006-08-28 2008-03-06 Fujitsu Ltd Inductor element, and integrated electronic parts
JP2021529043A (en) * 2018-06-29 2021-10-28 モナーク・バイオサイエンシズ・インコーポレイテッド Spiral-based thin film mesh system and related methods
WO2023142744A1 (en) * 2022-01-27 2023-08-03 无锡华润上华科技有限公司 Isolation transformer and manufacturing method therefor, and semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114932A (en) * 1997-12-12 2000-09-05 Telefonaktiebolaget Lm Ericsson Inductive component and inductive component assembly
JP2002541658A (en) * 1999-04-01 2002-12-03 ミッドコム インコーポレーテッド Multilayer type transformer and its manufacturing method
JP2008053613A (en) * 2006-08-28 2008-03-06 Fujitsu Ltd Inductor element, and integrated electronic parts
JP2021529043A (en) * 2018-06-29 2021-10-28 モナーク・バイオサイエンシズ・インコーポレイテッド Spiral-based thin film mesh system and related methods
WO2023142744A1 (en) * 2022-01-27 2023-08-03 无锡华润上华科技有限公司 Isolation transformer and manufacturing method therefor, and semiconductor device

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