JPH07254631A - Electronic circuit device and manufacture thereof - Google Patents

Electronic circuit device and manufacture thereof

Info

Publication number
JPH07254631A
JPH07254631A JP6043408A JP4340894A JPH07254631A JP H07254631 A JPH07254631 A JP H07254631A JP 6043408 A JP6043408 A JP 6043408A JP 4340894 A JP4340894 A JP 4340894A JP H07254631 A JPH07254631 A JP H07254631A
Authority
JP
Japan
Prior art keywords
protrusion
protruding
contact
electronic circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6043408A
Other languages
Japanese (ja)
Inventor
Tomoaki Sakata
智昭 坂田
Takamichi Suzuki
高道 鈴木
Tomohiko Murase
友彦 村瀬
Hitoshi Odajima
均 小田島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6043408A priority Critical patent/JPH07254631A/en
Publication of JPH07254631A publication Critical patent/JPH07254631A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/118Post-treatment of the bump connector
    • H01L2224/1183Reworking, e.g. shaping
    • H01L2224/1184Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7565Means for transporting the components to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To realize complete fusion bonding of an electronic circuit device onto a substrate by providing a protrusion having a melting point higher than that of a protruding contact facing a terminal electrode on a substrate and setting the height of the protrusion lower than that of the protruding contact. CONSTITUTION:Protrusions 3 are provided in same direction as protruding contacts 2 on the same surface of a substrate 6 as the protruding contacts 2 facing terminal electrodes 7 are provided. The protrusion 3 has melting point higher than that of the protruding contact 2 and the height of the protrusion 3 is set equal to or lower than the height for allowing positive electrical connection of all protruding contacts with the terminal electrodes 7 at the time of fusion thereof but higher than the height which causes mutual contact and short circuit of fused protruding contacts 2. This method realizes fusion bonding of an electronic circuit device, e.g. an LSI 1, having a plurality of protruding contacts 2 onto the substrate 6 without causing insufficient contact or short circuit.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子回路装置およびそ
の製造方法に係り、装置基板上の端子電極群との電気的
接続のために複数の突出接点部を有する電子回路装置の
構造およびその製造方法に関するもので、特に、安価に
製造および接合が可能であって、接続不良や接点ショー
トのない電子回路装置およびその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic circuit device and a manufacturing method thereof, and a structure of an electronic circuit device having a plurality of projecting contact portions for electrical connection with a terminal electrode group on a device substrate, and a structure thereof. The present invention relates to a manufacturing method, and more particularly, to an electronic circuit device that can be manufactured and joined at low cost and has no connection failure or contact short circuit, and a manufacturing method thereof.

【0002】[0002]

【従来の技術】近年、入出力端子の多いLSIでは、L
SIの電極にはんだ等によって半球上の突出接点(バン
プ)を形成し、これを基板上の端子電極に溶融接合して
電気的接続をおこなう構造が採用されるようになってい
る。この突出接点を溶融させる代表的方法については、
例えば、特願平3−216953号の明細書中に記載さ
れているような連続リフロー法が知られている。
2. Description of the Related Art In recent years, LSIs with many input / output terminals have been
A structure is adopted in which protruding contacts (bumps) on a hemisphere are formed on the SI electrodes by soldering or the like, and the protruding contacts (bumps) are melt-bonded to the terminal electrodes on the substrate for electrical connection. For a typical method of melting this protruding contact,
For example, a continuous reflow method as described in the specification of Japanese Patent Application No. 3-216953 is known.

【0003】図7は、従来技術に係る電子回路装置を基
板に接合する方法である連続リフロー法を示す工程フロ
ー図である。以下、この連続リフロー法を、図7の順を
追って説明しよう。
FIG. 7 is a process flow chart showing a continuous reflow method which is a method of bonding an electronic circuit device according to a conventional technique to a substrate. The continuous reflow method will be described below in the order of FIG.

【0004】最初に、基板6の端子電極7とそれに対応
するLSI1の突出接点2の位置を合わせる(図7
(a))。次に、基板6上にLSI1を搭載する(図7
(b))。
First, the terminal electrodes 7 of the substrate 6 and the corresponding protruding contacts 2 of the LSI 1 are aligned with each other (see FIG. 7).
(A)). Next, the LSI 1 is mounted on the substrate 6 (see FIG. 7).
(B)).

【0005】次に、前工程で基板6上にLSI1を搭載
されたものを、ベルトコンベア19によって搬送して、
加熱炉20に搬入する(図7(c))。最後に、基板6
にLSI1や面付け電子部品17を搭載したものを加熱
して、面付け電子部品17のはんだや突出接点2を溶融
させる(図7(d))。
Next, the substrate 1 on which the LSI 1 is mounted in the previous step is conveyed by the belt conveyor 19 and
It is carried into the heating furnace 20 (FIG. 7C). Finally, the substrate 6
The LSI 1 and the surface-mounted electronic component 17 mounted thereon are heated to melt the solder and the protruding contact 2 of the surface-mounted electronic component 17 (FIG. 7D).

【0006】突出接点2が溶融すると、突出接点2の先
端部分が基板6の端子電極7上にぬれ広がって、LSI
1の自重により突出接点2がつぶれてたいこ状になり、
その高さが低くなるいわゆるLSI1の沈み込みが生じ
る。この沈み込み量は、最終的にはLSI1の自重と溶
融した突出接点(群)が有する粘性力とのバランスで決
定される。
When the protruding contact 2 is melted, the tip portion of the protruding contact 2 wets and spreads on the terminal electrode 7 of the substrate 6, and LSI
The protruding contact 2 is crushed by the weight of 1
The so-called sinking of the LSI 1 occurs, which lowers the height. The amount of subsidence is finally determined by the balance between the own weight of the LSI 1 and the viscous force of the melted protruding contact (group).

【0007】[0007]

【発明が解決しようとする課題】以下、上記従来技術で
電子回路装置と基板とを接合する場合の問題点を、図8
ないし図11を用いて説明しよう。
Problems to be solved when the electronic circuit device and the substrate are joined by the above-mentioned conventional technique will be described below with reference to FIG.
Or let's explain with reference to FIG.

【0008】図8は、基板6に反りがあったときに、基
板6と突出接点2との接点不良が生じることを説明する
ための電子回路装置の側面図である。図9は、図8のよ
うに基板6に反りがあったときに、重り8を載せて修正
していることを示す電子回路装置の側面図である。図1
0は、図9のように重り8を載せたときに接点ショート
が生じている電子回路装置の側面図である。図11は、
放熱フィン4を有する電子回路装置の側面図である。
FIG. 8 is a side view of the electronic circuit device for explaining that a contact failure between the substrate 6 and the protruding contact 2 occurs when the substrate 6 is warped. FIG. 9 is a side view of the electronic circuit device showing that the weight 8 is placed and corrected when the substrate 6 is warped as shown in FIG. Figure 1
0 is a side view of the electronic circuit device in which a contact short circuit occurs when the weight 8 is placed as shown in FIG. FIG. 11 shows
It is a side view of an electronic circuit device which has a radiation fin 4.

【0009】上記従来技術は、突出接点2を加熱して基
板6と溶融接合する技術に関するものである。ところ
が、もし基板6に反りがあった場合には図8のように接
続が不充分な部分が生じることがあるという問題点があ
った。
The above-mentioned prior art relates to a technique for heating the protruding contact 2 to melt-bond it to the substrate 6. However, if the substrate 6 is warped, there is a problem in that a connection may be insufficient as shown in FIG.

【0010】そのため、図9のように基板6の反り、溶
融前の突出接点2の高さばらつき等の寸法誤差を勘案し
て適当な重量の重り8を載せてリフローすることがあ
る。
Therefore, as shown in FIG. 9, there is a case where a weight 8 having an appropriate weight is placed and reflowed in consideration of a warp of the substrate 6 and a dimensional error such as a height variation of the protruding contact 2 before melting.

【0011】しかしながら、重り8が軽すぎると上述の
接続不良は解消されず、重すぎると図10のように突出
接点2がつぶれすぎて隣接のものと接触し、いわゆる接
点ショートになるため、重り8にはバランスのよい重量
を持つものを用いることが必要である。また、はんだ
は、融点付近でその粘度が温度に対して急激に変化する
ため、リフロー時の温度調整にも細心の用心が必要であ
る。しかもその上に、重り8の重量とリフロー温度が互
いに関連があるため、両者の条件を最適にするための条
件を求めるのは困難で、多大の時間を費やすことが多い
という問題点があった。
However, if the weight 8 is too light, the above-mentioned connection failure cannot be eliminated, and if it is too heavy, the protruding contact 2 is crushed too much and comes into contact with an adjacent one as shown in FIG. For 8, it is necessary to use one having a well-balanced weight. In addition, since the viscosity of solder rapidly changes with temperature near the melting point, it is necessary to be very careful in adjusting the temperature during reflow. Moreover, since the weight of the weight 8 and the reflow temperature are related to each other, it is difficult to find a condition for optimizing the conditions of both, and it takes a lot of time. .

【0012】さらに、図11のように放熱フィン4を付
けてパッケージしたLSIでは、その自重が溶融した突
出接点の粘性力よりも大きい場合があり、このときは前
述のようなコンベア付き加熱炉でリフローすることがで
きず、LSIを把持してその自重をキャンセルさせた状
態で加熱するなどの方法を採った専用のリフロー装置が
必要となり、その専用のリフロー装置が製造ラインのコ
スト増しの原因となるという問題点があった。一般に基
板上にはLSI以外の部品も多数搭載されるため、コン
ベア付き加熱炉で全ての部品を同時にリフローすること
が最も経済的な基板製造方法だからである。
Further, in the LSI packaged with the radiation fins 4 as shown in FIG. 11, its own weight may be larger than the viscous force of the melted protruding contact. At this time, in the heating furnace with a conveyor as described above. A reflow device that cannot be reflowed and requires a method such as heating the LSI while gripping the LSI and canceling its own weight is required, and the dedicated reflow device causes a cost increase in the manufacturing line. There was a problem that In general, since many components other than LSI are mounted on the substrate, it is the most economical substrate manufacturing method to reflow all components at the same time in a heating furnace with a conveyor.

【0013】本発明は、上記従来技術の問題点を解決す
るためになされたもの、その目的は、複数の突出接点を
有するLSIのような電子回路装置を、接続不良あるい
は接点シュートが無く、基板上に溶融接合することがで
き、しかも、安価に製造および接合が可能な電子回路装
置およびその製造方法を提供することにある。
The present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to provide an electronic circuit device such as an LSI having a plurality of protruding contacts without causing a connection failure or a contact chute. An object of the present invention is to provide an electronic circuit device which can be melt-bonded onto the upper surface and can be manufactured and bonded at low cost, and a manufacturing method thereof.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
に、本発明の電子回路装置の構成は、基板上の端子電極
に対向する一つ以上の突出接点を備え、この突出接点を
溶融させて、前記基板の端子電極との間で、溶融接合に
より電気的接続をおこなうことのできる電子回路装置に
おいて、前記突出接点が備えられた面と同じ面に、前記
突出接点と同方向の向きを有する突起を有し、その突起
の融点は、前記突出接点の融点より高く、その突起の高
さは、前記突出接点が溶融する際に、この電子回路装置
が備えるすべての突出接点が、前記端子電極との間で各
々確実に電気的に接続されうる高さと等しいか、より低
く、しかも、前記突出接点が溶融する際に、これ以上低
いと溶融した突出接点が互いに接触して接点ショートと
なる部分が生ずる高さより高いようにしたものである。
In order to achieve the above object, the structure of an electronic circuit device of the present invention comprises one or more protruding contacts facing a terminal electrode on a substrate, and melting the protruding contacts. Then, in an electronic circuit device that can be electrically connected to the terminal electrode of the substrate by fusion bonding, in the same surface as the surface provided with the protruding contact, the direction of the same direction as the protruding contact. The protrusion has a melting point higher than that of the protruding contact, and the height of the protrusion is such that when the protruding contact melts, all the protruding contacts included in the electronic circuit device have the terminals. The height is equal to or lower than the height at which they can be electrically connected to the electrodes, respectively, and when the protruding contacts are melted, if the height is lower than this, the melted protruding contacts come into contact with each other to cause a contact short circuit. Part arises In which it was to be higher than of.

【0015】より詳しくは、上記の電子回路装置におい
て、前記突起を前記突出接点部よりも高融点であるろう
材により形成するようにしたものである。
More specifically, in the above electronic circuit device, the protrusion is formed of a brazing material having a melting point higher than that of the protruding contact portion.

【0016】また詳しくは、上記の電子回路装置におい
て、前記突起を前記突出接点部よりも高融点であるセラ
ミック材により形成するようにしたものである。
More specifically, in the above electronic circuit device, the protrusion is formed of a ceramic material having a melting point higher than that of the protruding contact portion.

【0017】さらに、上記目的を達成するために、本発
明の電子回路装置の製造方法の構成は、上記の電子回路
装置において、前記突出接点または前記突起をはんだボ
ールを溶融して成形するようにしたものである。
Further, in order to achieve the above object, the structure of the method for manufacturing an electronic circuit device of the present invention is such that in the above electronic circuit device, the protruding contact or the protrusion is formed by melting a solder ball. It was done.

【0018】また、本発明の電子回路装置の製造方法の
別の構成は、ワイヤボンダを用いて、はんだワイヤを電
子回路装置の所定に供給して加圧接合し、しかるのち
に、その加圧接合されたはんだワイヤを溶融して、前記
突出接点または前記突起を成形するようにしたものであ
る。
Another structure of the method for manufacturing an electronic circuit device according to the present invention is to use a wire bonder to supply a solder wire to the electronic circuit device in a predetermined manner and press-bond the solder wire. The solder wire thus formed is melted to form the protruding contact or the protrusion.

【0019】[0019]

【作用】本発明によれば、溶融に際し突出接点が突起の
高さ以下にはつぶれないため、突出接点を溶融した際
に、リフロー時の重りの重量を溶融した突出接点が有す
る表面張力に打ち勝つだけの大きさにするだけでよく、
リフロー温度条件も緩かにできる。このため、リフロー
条件出しに要する工数を低減でき、かつ重りの製作費用
も低減でき、リフロー用加熱炉も安価なもので済む。ま
た、放熱フィン付きLSIのようなものもベルトコンベ
ア付き加熱炉でリフローでき、専用のリフロー装置を必
要としないため、突出接点付き電子回路装置の基板への
接続を経済的におこなうことができる。
According to the present invention, since the protruding contact does not collapse below the height of the protrusion during melting, when the protruding contact is melted, the weight of the reflow weight is overcome by the surface tension of the melted protruding contact. Just make it big,
The reflow temperature condition can be made gentle. Therefore, the man-hours required for determining the reflow condition can be reduced, the manufacturing cost of the weight can be reduced, and the reflow heating furnace can be inexpensive. Also, an LSI such as a radiator fin can be reflowed in a heating furnace with a belt conveyor, and a dedicated reflow device is not required, so that an electronic circuit device with protruding contacts can be economically connected to a substrate.

【0020】そして、突出接点よりも高融点の突起を設
けることにより、突出接点が溶融しても突起の高さより
低くはつぶれないため、未接続不良あるいは接点ショー
ト不良のない接合が容易に得られる。
By providing a protrusion having a melting point higher than that of the protruding contact, even if the protruding contact is melted, the protrusion is not crushed below the height of the protrusion, so that a connection without a defective connection or a defective contact short can be easily obtained. .

【0021】また、上記突起を突出接点と同様のろう材
で形成することにより、突起を突出接点と同様のプロセ
スで形成できるため、突起を有する突出接点形電子回路
装置を安価に作ることができる。
Further, since the protrusion can be formed in the same process as that of the protruding contact by forming the protrusion with the same brazing material as that of the protruding contact, the protruding contact type electronic circuit device having the protrusion can be manufactured at low cost. .

【0022】[0022]

【実施例】以下、本発明に係る一実施例を、図1ないし
図6を用いて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described below with reference to FIGS.

【0023】〔電子回路装置の構造とその溶融接合〕以
下、図1ないし図4を用いて、本発明の一実施例に係る
電子回路装置の構造とそれを溶融接合する場合について
説明しよう。
[Structure of Electronic Circuit Device and Its Melt Bonding] The structure of an electronic circuit device according to an embodiment of the present invention and the case of melting and bonding it will be described below with reference to FIGS. 1 to 4.

【0024】図1は、本発明の一実施例に係る電子回路
装置の側面図である。図2は、図1(a)の構造の電子
回路装置を基板上に溶融接合するときの工程フロー図で
ある。図3は、本発明の一実施例に係る電子回路装置を
基板上に溶融接合するときの接合部の拡大側面図であ
る。図4は、図1(b)の構造の電子回路装置を基板上
に溶融接合するときの工程フロー図である。
FIG. 1 is a side view of an electronic circuit device according to an embodiment of the present invention. FIG. 2 is a process flow diagram when the electronic circuit device having the structure of FIG. 1A is melt-bonded onto a substrate. FIG. 3 is an enlarged side view of a joint portion when an electronic circuit device according to an embodiment of the present invention is fusion-bonded onto a substrate. FIG. 4 is a process flow diagram when the electronic circuit device having the structure of FIG. 1B is melt-bonded onto a substrate.

【0025】図1(a)に示された電子回路装置のLS
I1には、基板の端子電極7との電気的接続のために、
その基板への接続面に複数の突出接点2が形成されてい
る。そして、この同一面に突出接点2よりも高さが低い
かあるいは同じ高さの突起3が設けられている。しか
も、この突起3は突出接点2よりも融点の高い材質で形
成されている。
The LS of the electronic circuit device shown in FIG.
I1 is connected to the terminal electrode 7 of the substrate for electrical connection,
A plurality of protruding contacts 2 are formed on the connection surface to the substrate. A protrusion 3 having a height lower than or equal to that of the protruding contact 2 is provided on the same surface. Moreover, the protrusion 3 is made of a material having a higher melting point than the protruding contact 2.

【0026】また、図1(b)は、本発明の一実施例に
係る電子回路装置の今一つの構造であって、LSI1の
上面(基板接続面と反対側の面)に放熱フィン4が接合
部5を介して接合されている場合の構造例を示したもの
である。
FIG. 1B shows another structure of the electronic circuit device according to the embodiment of the present invention, in which the radiation fins 4 are bonded to the upper surface of the LSI 1 (the surface opposite to the substrate connection surface). It shows a structural example in the case of being joined via the portion 5.

【0027】さて、図1(a)に示された電子回路装置
を基板上に溶融接合する工程を、図2の順を追って説明
しよう。
Now, a process of fusion-bonding the electronic circuit device shown in FIG. 1A onto a substrate will be described in order of FIG.

【0028】最初に、LSI1の突出接点2と基板6の
端子電極7の位置合わせをおこなう(図2(a))。次
に、LSI1を基板6の上に搭載する(図2(b))。
First, the protruding contact 2 of the LSI 1 and the terminal electrode 7 of the substrate 6 are aligned (FIG. 2A). Next, the LSI 1 is mounted on the substrate 6 (FIG. 2B).

【0029】次に、加重をかけるため重り8をLSI1
の上面に置く(図2(c))。最後に、突出接点2を溶
融させ、端子電極に接着させるために、この装置を加熱
する(図2(d))。
Next, in order to apply a weight, the weight 8 is attached to the LSI 1
(Fig. 2 (c)). Finally, the device is heated in order to melt the protruding contacts 2 and bond them to the terminal electrodes (FIG. 2 (d)).

【0030】この図2(d)の加熱工程においては、そ
の加熱温度は突出接点2の融点以上であり、かつ、突起
3の融点より低く設定する。このようにすれば、突出接
点2は端子電極7へのぬれ広がって、LSI1と重り8
の重量によりつぶれるが、突起3はつぶれずにLSI1
と重り8の荷重を受け止める。したがって、このLSI
1の沈み込み量は突起3により規定されることになる。
In the heating step of FIG. 2D, the heating temperature is set to be higher than the melting point of the protruding contact 2 and lower than the melting point of the protrusion 3. By doing so, the protruding contact 2 spreads wet to the terminal electrode 7, and the LSI 1 and the weight 8
Although it is crushed by the weight of the
And receives the load of weight 8. Therefore, this LSI
The amount of depression of 1 is defined by the protrusion 3.

【0031】ここで、図3を用いて、突出接点と突起の
高さの望ましい関係について説明しよう。突起3の高さ
をhとする。
Now, with reference to FIG. 3, a desirable relationship between the protruding contact and the height of the protrusion will be described. The height of the protrusion 3 is h.

【0032】突出接点2が端子電極7と確実に電気的に
接続されるためには、この突起3があまり高くなっては
ならない。したがって、図3(a)に示すように、突出
接点が溶融してつぶれた際、すべての突出接点2が端子
電極7と確実に電気的に接続されうる高さをh1とする
と、h1とhの関係は、以下の式(1)でなければなら
ない。
In order to ensure that the protruding contact 2 is electrically connected to the terminal electrode 7, the protrusion 3 must not be too high. Therefore, as shown in FIG. 3A, if the height at which all the protruding contacts 2 can be reliably electrically connected to the terminal electrodes 7 when the protruding contacts are melted and crushed is h 1 , h 1 The relationship between h and h must be the following expression (1).

【0033】[0033]

【数1】h1≧h …(1) 一方、この突起3があまり短いと、今度は隣接した突出
接点2において、溶融した突出接点2の接合材料が互い
にくっついて接点ショートの原因となる。したがって、
図3(b)に示すように、突出接点2を溶融した際に、
これ以上低いと溶融した突出接点2の接合材料が互いに
接触して接点ショートとなる限界の高さをh2とする
と、h2とhの関係は、以下の式(2)でなければなら
ない。
## EQU00001 ## h 1 ≧ h (1) On the other hand, if the projection 3 is too short, the fused bonding materials of the protruding contacts 2 stick to each other at the adjacent protruding contacts 2 and cause a contact short circuit. Therefore,
As shown in FIG. 3B, when the protruding contact 2 is melted,
When the limit of height bonding material protruding contacts 2 and molten more low becomes contact short in contact with each other and h 2, the relationship of h 2 and h must be the following equation (2).

【0034】[0034]

【数2】h>h2 …(2) 結局、上記の両者をあわせて、突出接点と突起の高さの
望ましい関係は、以下の式(3)でなければならないこ
とがわかる。
[Number 2] h> h 2 ... (2) After all, together both the desired relationship between the height of the protruding contact protrusion, it can be seen that must be in the following equation (3).

【0035】[0035]

【数3】h1≧h>h2 …(3) 次に、上記の工程と対比して、図1(b)の構造の電子
回路装置を溶融接合する場合について説明する。すなわ
ち、放熱フィン4を上面に接合したLSI1を基板6に
溶融接合する工程である。
## EQU00003 ## h 1 ≧ h> h 2 (3) Next, a case where the electronic circuit device having the structure of FIG. 1B is fusion-bonded will be described in comparison with the above process. That is, this is a step of fusion-bonding the LSI 1 having the radiation fins 4 bonded to the upper surface to the substrate 6.

【0036】以下、図3の順を追って説明しよう。最初
に、LSI1の突出接点2と基板6の端子電極7の位置
合わせをおこなう(図4(a))。次に、LSI1を基
板6の上に搭載する(図4(b))。
The following is a description of the order of FIG. First, the protruding contact 2 of the LSI 1 and the terminal electrode 7 of the substrate 6 are aligned (FIG. 4A). Next, the LSI 1 is mounted on the substrate 6 (FIG. 4B).

【0037】最後に、突出接点2を溶融させ、端子電極
に接着させるために、この装置を加熱する(図4
(c))。
Finally, the device is heated in order to melt the protruding contacts 2 and bond them to the terminal electrodes (FIG. 4).
(C)).

【0038】ここで、前記図2で示した工程と比べる
と、重り8を載せる工程はないが、これは、放熱フィン
4が図2における重り8と同じ役割をして、図4(c)
において溶融した突出接点2が有する表面張力に打ち勝
って、突起3により規定される所定の高さまで突出接点
をつぶすように作用するからである。
Here, as compared with the step shown in FIG. 2, there is no step for placing the weight 8, but this is because the radiation fin 4 has the same role as the weight 8 in FIG.
This is because the surface tension of the melted protruding contact 2 is overcome and the protruding contact is crushed to a predetermined height defined by the protrusion 3.

【0039】上記実施例において説明したように、本発
明によれば、突起3によりリフロー時のLSI1の沈み
込み量(即ち突出接点2のつぶれ量)を所定の値にする
ことができるため、電子回路の基板への接合が、未接続
不良やショート不良を発生させることなく、しかも、高
信頼度でかつ容易に実現できる。また突起3を突出接点
2と同様のはんだ材料にて形成するため、突起3を安価
に形成することができる。
As described in the above embodiments, according to the present invention, the protrusion 3 can set the sinking amount of the LSI 1 at the time of reflow (that is, the crushing amount of the protruding contact 2) to a predetermined value. Bonding of the circuit to the substrate can be easily realized with high reliability without causing disconnection defects and short circuit defects. Further, since the protrusion 3 is formed of the same solder material as that of the protruding contact 2, the protrusion 3 can be formed at low cost.

【0040】〔電子回路装置の製造方法〕以下、図5お
よび図6を用いて、本発明の一実施例に係る電子回路装
置を製造する方法について説明しよう。図5は、本実施
例に係る電子回路装置において、LSI1に突出接点2
および突起3を形成する製造工程フロー図である。
[Method for Manufacturing Electronic Circuit Device] A method for manufacturing an electronic circuit device according to an embodiment of the present invention will be described below with reference to FIGS. 5 and 6. FIG. 5 is a schematic circuit diagram of the electronic circuit device according to the present embodiment.
FIG. 7 is a manufacturing process flow chart for forming a protrusion 3 and a protrusion 3.

【0041】LSI1は図1ないし図3とは逆に接合面
を上向きにして置かれている。LSI1には突出接点2
を形成するための基台としての突出接点用電極9と突起
3を形成するための基台としての突起用メタライズ10
が設けられている。突起用メタライズ10とLSI1の
内部回路との電気的接続はおこなわない。
Contrary to FIGS. 1 to 3, the LSI 1 is placed with the bonding surface facing upward. LSI1 has protruding contact 2
Electrode 9 for a protruding contact serving as a base for forming a protrusion and metallization 10 for a protrusion serving as a base for forming the protrusion 3.
Is provided. The projection metallization 10 and the internal circuit of the LSI 1 are not electrically connected.

【0042】以下、図5の順を追って説明しよう。最初
に、突出接点用はんだボール11を突出接点用電極9に
上に搭載する(図5(a))。次に、突起用はんだボー
ル12を突起用メタライズ10の上に搭載する(図5
(b))。最後に、加熱リフローする(図5(c))。
Hereinafter, description will be made in order of FIG. First, the protruding contact solder balls 11 are mounted on the protruding contact electrodes 9 (FIG. 5A). Next, the solder balls 12 for protrusions are mounted on the metallization 10 for protrusions (see FIG. 5).
(B)). Finally, heating reflow is performed (FIG. 5C).

【0043】前述したように突起用はんだボール12は
突出接点用はんだボール11よりも融点の高い材質でな
ければならない。したがって、そのようにすれば、加熱
工程(図5(c))における加熱温度を突起用はんだボ
ール12の融点よりも高い温度にすれば、両者とも溶融
し、半球状の突出接点2および突起3が形成されること
になる。
As described above, the solder balls 12 for protrusions must be made of a material having a higher melting point than the solder balls 11 for protruding contacts. Therefore, by doing so, if the heating temperature in the heating step (FIG. 5C) is set to a temperature higher than the melting point of the solder balls 12 for protrusions, both are melted and the hemispherical protruding contacts 2 and the protrusions 3 are melted. Will be formed.

【0044】図6は、本実施例に係る電子回路装置にお
いて、LSI1に突出接点2および突起3を形成する他
の製造工程フロー図である。
FIG. 6 is a flowchart of another manufacturing process for forming the protruding contact 2 and the protrusion 3 on the LSI 1 in the electronic circuit device according to this embodiment.

【0045】以下、図6の順を追って説明しよう。最初
に、突出接点用ワイヤボンダ13の先端に突き出した突
出接点用はんだワイヤ14の端部を加熱して球体化する
(加熱装置は図示せず)(図6(a))。次に、突出接
点用電極9の上に加圧接合した後、上方に引っ張って突
出接点用はんだワイヤ14を引きちぎる(図6
(b))。
Hereinafter, the order of FIG. 6 will be described. First, the end of the protruding contact solder wire 14 protruding from the tip of the protruding contact wire bonder 13 is heated to be spherical (a heating device is not shown) (FIG. 6A). Next, after pressure bonding is performed on the protruding contact electrode 9, the protruding contact solder wire 14 is pulled off by pulling upward (FIG. 6).
(B)).

【0046】次に、これを全ての突出接点用電極9につ
いて逐次おこなう(図6(c))。次に、突起用ワイヤ
ボンダ15および突起用はんだワイヤを用いて全ての突
起用メタライズ10に対し、同様の加圧接合をおこなう
(図6(d))。最後に、加熱リフローする(図6
(e))。
Next, this is sequentially performed for all the protruding contact electrodes 9 (FIG. 6C). Next, the same pressure bonding is performed on all the metallizations 10 for protrusions using the protrusion wire bonder 15 and the solder wires for protrusions (FIG. 6D). Finally, heat reflow (Fig. 6)
(E)).

【0047】前述の製造方法の所でも記したのと同様、
突起用はんだワイヤ16は突出接点用はんだワイヤ14
よりも融点の高い材質であり、加熱工程(図6(e))
における加熱温度を突起用はんだワイヤ16の融点より
も高い温度にすれば、両者とも溶融し、半球状の突出接
点2および突起3が形成される。
As described in the above-mentioned manufacturing method,
The solder wire 16 for the protrusion is the solder wire 14 for the protruding contact.
Is a material with a higher melting point than that of the heating process (Fig. 6 (e))
If the heating temperature in is higher than the melting point of the solder wire 16 for protrusion, both are melted and the hemispherical protruding contact 2 and the protrusion 3 are formed.

【0048】なお、上記実施例では突起3を突出接点2
と同様の製造工程にて形成する例を示したが、これらを
製造する場合においては、突起3と突出接点2の製造方
法が混在(例えば、突出接点2をはんだボールで形成し
突起3をはんだワイヤボンディング形成するまたはその
逆)してもよい。また、両者の形成は上記以外のはんだ
メッキ、はんだ蒸着などの製造方法によっても可能であ
る。
In the above embodiment, the projection 3 is formed on the protruding contact 2
Although an example of forming by the same manufacturing process as the above is shown, in the case of manufacturing these, the manufacturing method of the protrusion 3 and the protruding contact 2 are mixed (for example, the protruding contact 2 is formed by a solder ball and the protrusion 3 is formed by soldering). Wire bonding may be formed or vice versa). Further, both can be formed by a manufacturing method other than the above, such as solder plating and solder vapor deposition.

【0049】また、突起3は突出接点2よりも高融点で
あれば良く、上記実施例のようにはんだ等のろう材で形
成するだけでなく、セラミック等の材質の柱状体をLS
I1に接合するあるいはLSIの製造プロセスの中で突
起部を形成するなどの方法によって形成してもよい。
Further, the protrusion 3 need only have a higher melting point than that of the protruding contact 2, and not only is it formed of a brazing material such as solder as in the above-described embodiment, but also a columnar body made of a material such as ceramic is LS.
It may be formed by a method such as bonding to I1 or forming a protrusion in the LSI manufacturing process.

【0050】[0050]

【発明の効果】本発明によれば、複数の突出接点を有す
るLSIのような電子回路装置を、接続不良あるいは接
点シュートが無く、基板上に溶融接合することができ、
しかも、安価に製造および接合が可能な電子回路装置お
よびその製造方法を提供することができる。
According to the present invention, an electronic circuit device such as an LSI having a plurality of protruding contacts can be melt-bonded onto a substrate without any connection failure or contact chute.
Moreover, it is possible to provide an electronic circuit device that can be manufactured and bonded at low cost, and a manufacturing method thereof.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る電子回路装置の側面図
である。
FIG. 1 is a side view of an electronic circuit device according to an embodiment of the present invention.

【図2】図1(a)の構造の電子回路装置を基板上に溶
融接合するときの工程フロー図である。
FIG. 2 is a process flow diagram when the electronic circuit device having the structure of FIG. 1A is melt-bonded onto a substrate.

【図3】本発明の一実施例に係る電子回路装置を基板上
に溶融接合するときの接合部の拡大側面図である。
FIG. 3 is an enlarged side view of a joint portion when an electronic circuit device according to an embodiment of the present invention is fusion-bonded onto a substrate.

【図4】図1(b)の構造の電子回路装置を基板上に溶
融接合するときの工程フロー図である。
FIG. 4 is a process flow diagram when the electronic circuit device having the structure of FIG. 1B is melt-bonded onto a substrate.

【図5】本実施例に係る電子回路装置において、LSI
1に突出接点2および突起3を形成する製造工程フロー
図である。
FIG. 5 shows an LSI in the electronic circuit device according to the present embodiment.
FIG. 3 is a manufacturing process flow chart of forming the protruding contact 2 and the protrusion 3 on the first structure.

【図6】本実施例に係る電子回路装置において、LSI
1に突出接点2および突起3を形成する他の製造工程フ
ロー図である。
FIG. 6 shows an electronic circuit device according to the present embodiment in which an LSI
FIG. 7 is a flow chart of another manufacturing process for forming the protruding contact 2 and the protrusion 3 on the first substrate.

【図7】従来技術に係る電子回路装置を基板に接合する
方法である連続リフロー法を示す工程フロー図である。
FIG. 7 is a process flow chart showing a continuous reflow method which is a method of bonding an electronic circuit device according to a conventional technique to a substrate.

【図8】基板6に反りがあったときに、基板6と突出接
点2との接点不良が生じることを説明するための電子回
路装置の側面図である。
FIG. 8 is a side view of the electronic circuit device for explaining that contact failure between the substrate 6 and the protruding contact 2 occurs when the substrate 6 is warped.

【図9】図8のように基板6に反りがあったときに、重
り8を載せて修正していることを示す電子回路装置の側
面図である。
9 is a side view of the electronic circuit device showing that the weight 8 is mounted and corrected when the substrate 6 is warped as shown in FIG.

【図10】図9のように重り8を載せたときに接点ショ
ートが生じている電子回路装置の側面図である。
FIG. 10 is a side view of the electronic circuit device in which a contact short circuit occurs when the weight 8 is placed as in FIG.

【図11】放熱フィン4を有する電子回路装置の側面図
である。
FIG. 11 is a side view of an electronic circuit device having a radiation fin 4.

【符号の説明】[Explanation of symbols]

1…LSI 2…突出接点 3…突起 4…放熱フィン 5…接合部 6…基板 7…端子電極 8…重り 9…突出接点用電極 10…突起用メタライズ 11…突出接点用はんだボール 12…突起用はんだボール 13…突出接点用ワイヤボンダ 14…突出接点用はんだワイヤ 15…突起用ワイヤボンダ 16…突起用はんだワイヤ 17…面付け電子部品 18…はんだペースト 19…ベルトコンベア 20…加熱炉 DESCRIPTION OF SYMBOLS 1 ... LSI 2 ... Protruding contact 3 ... Protrusion 4 ... Radiating fin 5 ... Joining part 6 ... Substrate 7 ... Terminal electrode 8 ... Weight 9 ... Protrusion contact electrode 10 ... Protrusion metallization 11 ... Protrusion contact solder ball 12 ... Protrusion Solder ball 13 ... Wire bonder for protruding contact 14 ... Solder wire for protruding contact 15 ... Wire bonder for protrusion 16 ... Solder wire for protrusion 17 ... Imposition electronic component 18 ... Solder paste 19 ... Belt conveyor 20 ... Heating furnace

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小田島 均 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hitoshi Odajima 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 基板上の端子電極に対向する一つ以上の
突出接点を備え、 この突出接点を溶融させて、前記基板の端子電極との間
で、溶融接合により電気的接続をおこなうことのできる
電子回路装置において、 前記突出接点が備えられた面と同じ面に、前記突出接点
と同方向の向きを有する突起を有し、 その突起の融点は、前記突出接点の融点より高く、 その突起の高さは、前記突出接点が溶融する際に、この
電子回路装置が備えるすべての突出接点が、前記端子電
極との間で各々確実に電気的に接続されうる高さと等し
いか、より低く、しかも、前記突出接点が溶融する際
に、これ以上低いと溶融した突出接点が互いに接触して
接点ショートとなる部分が生ずる高さより高いことを特
徴とする電子回路装置。
1. A method comprising: one or more projecting contacts facing a terminal electrode on a substrate; melting the projecting contact to form an electrical connection with the terminal electrode of the substrate by fusion bonding. In the electronic circuit device that can be provided, a protrusion having a direction in the same direction as that of the protruding contact is provided on the same surface as the surface provided with the protruding contact, and the melting point of the protrusion is higher than the melting point of the protruding contact. The height of is equal to or lower than the height at which all the protruding contacts of the electronic circuit device can be surely electrically connected to the terminal electrodes when the protruding contacts are melted, Moreover, when the protruding contact is melted, the height is higher than the height at which a portion where the protruding contact melts to contact with each other to cause a contact short circuit if the protrusion contact is lower than the height.
【請求項2】 前記突起を前記突出接点部よりも高融点
であるろう材により形成することを特徴とする請求項1
記載の電子回路装置。
2. The protrusion is formed of a brazing material having a melting point higher than that of the protruding contact portion.
Electronic circuit device described.
【請求項3】 前記突起を前記突出接点部よりも高融点
であるセラミック材により形成することを特徴とする請
求項1記載の電子回路装置。
3. The electronic circuit device according to claim 1, wherein the protrusion is made of a ceramic material having a melting point higher than that of the protruding contact portion.
【請求項4】 前記突出接点または前記突起をはんだボ
ールを溶融して成形することを特徴とする請求項1およ
び請求項2記載のいずれかの電子回路装置の製造方法。
4. The method for manufacturing an electronic circuit device according to claim 1, wherein the protruding contact or the protrusion is formed by melting a solder ball.
【請求項5】 ワイヤボンダを用いて、はんだワイヤを
電子回路装置の所定に供給して加圧接合し、しかるのち
に、その加圧接合されたはんだワイヤを溶融して、前記
突出接点または前記突起を成形することを特徴とする請
求項1および請求項2記載のいずれかの電子回路装置の
製造方法。
5. A wire bonder is used to supply a solder wire to an electronic circuit device in a predetermined manner for pressure bonding, and then the pressure-bonded solder wire is melted to form the protruding contact or the protrusion. 3. The method for manufacturing an electronic circuit device according to claim 1, wherein the method is molded.
JP6043408A 1994-03-15 1994-03-15 Electronic circuit device and manufacture thereof Pending JPH07254631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6043408A JPH07254631A (en) 1994-03-15 1994-03-15 Electronic circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6043408A JPH07254631A (en) 1994-03-15 1994-03-15 Electronic circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH07254631A true JPH07254631A (en) 1995-10-03

Family

ID=12662927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6043408A Pending JPH07254631A (en) 1994-03-15 1994-03-15 Electronic circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH07254631A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477011A (en) * 1988-04-18 1989-03-23 Minolta Camera Kk Automatic focusing interchangeable lens camera
JPH08298264A (en) * 1995-04-27 1996-11-12 Hitachi Ltd Electronic circuit device
JPH09283562A (en) * 1996-04-18 1997-10-31 Nec Corp Integrated circuit device and method of connecting it to substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477011A (en) * 1988-04-18 1989-03-23 Minolta Camera Kk Automatic focusing interchangeable lens camera
JPH08298264A (en) * 1995-04-27 1996-11-12 Hitachi Ltd Electronic circuit device
JPH09283562A (en) * 1996-04-18 1997-10-31 Nec Corp Integrated circuit device and method of connecting it to substrate

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