JPH07254579A - Polisher - Google Patents
PolisherInfo
- Publication number
- JPH07254579A JPH07254579A JP4416094A JP4416094A JPH07254579A JP H07254579 A JPH07254579 A JP H07254579A JP 4416094 A JP4416094 A JP 4416094A JP 4416094 A JP4416094 A JP 4416094A JP H07254579 A JPH07254579 A JP H07254579A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive
- temperature
- polishing agent
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造技術の一つ
である研磨技術に関し、特に導体膜を研磨するための装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing technique which is one of semiconductor manufacturing techniques, and more particularly to an apparatus for polishing a conductor film.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおけるＣＭＰの被
研磨体の材料としては、ＳｉＯ2 、Ａｌ、Ｃｕ、Ｗ等が
挙げられるが、いずれの材料を研磨する場合でも研磨温
度は最も重要な条件となる。すなわち、ＣＭＰの際の温
度が変化すると、研磨速度や研磨特性は大きく変わる。
従来の研磨装置では、研磨温度の変動に起因する研磨速
度や研磨特性の変動を抑制するために、研磨温度を調節
する手段が用いられている。例えば、研磨剤を貯蔵する
容器に冷却水循環装置を設置し、容器の温度を一定に保
持して温度変動による研磨特性の変動を防止したり、研
磨定盤に冷却水循環装置を設置し、研磨定盤を冷却して
研磨定盤の反りを防止し、研磨定盤の平坦度を保つよう
にしている。このような手段を備えた研磨装置として
は、例えばMecapol E2000 （ PRESI社（フランス）製、
商品名）がある。この研磨装置は、研磨定盤の下面に冷
却水を噴射して冷却する手段を備えている。2. Description of the Related Art As materials for a CMP object to be polished in a semiconductor manufacturing process, SiO 2 , Al, Cu, W and the like can be mentioned, and the polishing temperature is the most important condition in polishing any material. . That is, when the temperature during CMP changes, the polishing rate and polishing characteristics change greatly.
In the conventional polishing apparatus, a means for adjusting the polishing temperature is used in order to suppress variations in the polishing rate and polishing characteristics due to variations in the polishing temperature. For example, a cooling water circulation device is installed in a container that stores abrasives, and the temperature of the container is kept constant to prevent fluctuations in polishing characteristics due to temperature fluctuations. The platen is cooled to prevent the polishing platen from warping and maintain the flatness of the polishing platen. As a polishing apparatus provided with such means, for example, Mecapol E2000 (manufactured by PRESI (France),
There is a product name). This polishing apparatus is equipped with a means for cooling by spraying cooling water on the lower surface of the polishing platen.
【０００３】本発明者らは、Ａｌ、Ｃｕ、Ａｇ等の軟質
金属の埋め込み配線を形成する目的でＣＭＰを行う場
合、研磨剤スラリーを０℃〜１０℃程度の低温で供給す
ると、研磨剤スラリーを２０〜３０℃の室温で供給する
よりも、金属のディッシングが抑制されるという結果を
得た。The present inventors have found that when performing CMP for the purpose of forming a buried wiring of a soft metal such as Al, Cu, Ag, etc., when the polishing slurry is supplied at a low temperature of about 0 ° C. to 10 ° C. Was obtained at a room temperature of 20 to 30 ° C., which resulted in suppression of metal dishing.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、研磨粒
子を分散させてなる研磨剤を収容するタンク内で低温に
保つと、研磨粒子が凝集、沈降し易くなるという問題が
ある。研磨粒子が凝集、沈降した状態、すなわち不均一
な状態の研磨剤を用いて研磨を行うと、被研磨体の表面
に傷が発生したり、研磨速度や研磨特性が変動する。従
来の研磨装置では、研磨剤中の研磨粒子の凝集、沈降を
防止するために、タンクに撹拌手段を備えているが、研
磨剤を低温にした場合においては、撹拌だけでは研磨粒
子の凝集、沈降を充分に防止することができず、被研磨
体表面の傷の発生、研磨速度や研磨特性の変動を回避す
ることができない。However, if the temperature is kept low in a tank containing an abrasive containing dispersed abrasive particles, the abrasive particles tend to aggregate and settle. When polishing is performed using an abrasive in a state where the abrasive particles are aggregated and settled, that is, in a non-uniform state, scratches are generated on the surface of the object to be polished, and the polishing rate and polishing characteristics are changed. In the conventional polishing apparatus, the tank is equipped with a stirring means in order to prevent the agglomeration and settling of the abrasive particles in the abrasive, but when the temperature of the abrasive is low, the agglomeration of the abrasive particles only by agitation, It is not possible to sufficiently prevent sedimentation, and it is impossible to avoid generation of scratches on the surface of the object to be polished and fluctuations in the polishing rate and polishing characteristics.
【０００５】本発明はかかる点に鑑みてなされたもので
あり、実用上問題がない程度に配線表面に生じる傷（粗
れ）およびディッシングの発生を抑制して研磨すること
ができる研磨装置を提供することを目的とする。The present invention has been made in view of the above points, and provides a polishing apparatus capable of polishing while suppressing the generation of scratches (roughness) and dishing on the wiring surface to the extent that there is no practical problem. The purpose is to do.
【０００６】[0006]
【課題を解決するための手段】本発明は、研磨剤を貯蔵
する研磨剤貯蔵容器と、被研磨体を研磨するための研磨
定盤と、前記研磨剤貯蔵容器から前記研磨定盤上へ前記
研磨剤を供給する研磨剤供給管と、前記被研磨体の被研
磨面を前記研磨定盤に対面させるように前記被研磨体を
保持する被研磨体保持具と、前記研磨剤供給管に取り付
けられており、前記研磨剤の温度を調節する研磨剤温度
調節手段とを具備することを特徴とする研磨装置を提供
する。According to the present invention, there is provided an abrasive storage container for storing an abrasive, a polishing platen for polishing an object to be polished, and the polishing plate from the abrasive storage container to the polishing plate. A polishing agent supply pipe for supplying a polishing agent, an object-to-be-polished holder for holding the object to be polished so that the surface to be polished of the object to be polished faces the polishing platen, and the polishing agent supply pipe is attached. And a polishing agent temperature control means for controlling the temperature of the polishing agent.
【０００７】本発明の研磨装置において、研磨剤温度調
節手段は、研磨剤の温度を研磨剤貯蔵容器内の研磨剤の
温度よりも低く調節する手段であることが好ましい。こ
こで、研磨剤としては、シリカ、酸化アルミニウム、酸
化セリウム、酸化ジルコニウム、炭素粒子等の研磨粒子
を任意の溶液に分散させてなるものを用いることができ
る。被研磨体としては、Ａｌ、Ａｌ合金、Ｃｕ、Ｃｕ合
金、Ａｇ、Ａｇ合金からなる膜等を挙げることができ
る。In the polishing apparatus of the present invention, the polishing agent temperature adjusting means is preferably a means for controlling the temperature of the polishing agent to be lower than the temperature of the polishing agent in the polishing agent storage container. Here, as the polishing agent, those obtained by dispersing polishing particles such as silica, aluminum oxide, cerium oxide, zirconium oxide, and carbon particles in an arbitrary solution can be used. Examples of the object to be polished include a film made of Al, Al alloy, Cu, Cu alloy, Ag, and Ag alloy.
【０００８】被研磨体保持具としては、真空チャックに
より被研磨体を保持する構造、または把持爪により被研
磨体を把持する構造等を有するものを用いることができ
る。本発明において、研磨剤供給管温度調節手段は、研
磨剤供給管内を通流する研磨剤の温度を供給時に低温に
することができるものであればよい。このようなものと
して、研磨剤供給管が任意の温度の冷却液中を通る機構
等を挙げることができる。また、研磨剤温度調節手段
は、研磨剤や被研磨体の種類に応じて制御手段により適
宜温度調節を行うことができるようにすることが好まし
い。As the object-to-be-polished holder, one having a structure for holding the object to be polished by a vacuum chuck or a structure for holding the object to be polished by a gripping claw can be used. In the present invention, the polishing agent supply pipe temperature adjusting means may be any one that can lower the temperature of the polishing agent flowing in the polishing agent supply pipe at the time of supply. As such a thing, the mechanism etc. which an abrasive | polishing agent supply pipe passes through the cooling liquid of arbitrary temperature can be mentioned. Further, it is preferable that the polishing agent temperature adjusting means allows the controlling means to appropriately adjust the temperature according to the types of the polishing agent and the object to be polished.
【０００９】[0009]
【作用】本発明は、研磨剤供給管に取り付けられ、研磨
剤の温度を調節する研磨剤温度調節手段を具備すること
を特徴としている。この研磨剤温度調節手段により、研
磨剤を供給する直前に研磨剤を低温にすることができ
る。したがって、研磨剤中の研磨粒子が凝集・沈降せ
ず、低温状態の研磨剤を安定して供給することができ
る。その結果、傷（粗れ）およびディッシングの発生を
抑制してＡｌ、Ｃｕ、Ａｇ等の軟質金属の研磨を行うこ
とができる。The present invention is characterized in that it comprises an abrasive temperature adjusting means for adjusting the temperature of the abrasive, which is attached to the abrasive supply pipe. The polishing agent temperature adjusting means can lower the temperature of the polishing agent immediately before supplying the polishing agent. Therefore, the polishing particles in the polishing agent do not aggregate and settle, and the polishing agent in a low temperature state can be stably supplied. As a result, it is possible to suppress the generation of scratches (roughness) and dishing and polish soft metals such as Al, Cu, and Ag.
【００１０】[0010]
【実施例】以下、本発明の実施例を図面を参照して具体
的に説明する。 （実施例１）図１は本発明に係る研磨装置の一例を示す
概略図である。図中１１は試料ホルダーを示す。この試
料ホルダー１１は図示しない駆動機構に接続されてお
り、この駆動機構により上下方向に移動可能であり、ま
た回転可能になっている。試料ホルダー１１には、真空
チャックにより被研磨体１２が保持されている。試料ホ
ルダー１１の下方には、研磨プレート１４が配置されて
おり、研磨プレート１４の上面には、ポリッシングパッ
ド１３が貼付されている。研磨プレート１４およびポリ
ッシングパッド１３により研磨定盤が構成されている。
この研磨定盤は図示しない駆動機構により回転可能にな
っている。Embodiments of the present invention will be specifically described below with reference to the drawings. (Embodiment 1) FIG. 1 is a schematic view showing an example of a polishing apparatus according to the present invention. In the figure, 11 indicates a sample holder. The sample holder 11 is connected to a drive mechanism (not shown), and is vertically movable and rotatable by the drive mechanism. The sample holder 11 holds the workpiece 12 by a vacuum chuck. A polishing plate 14 is arranged below the sample holder 11, and a polishing pad 13 is attached to the upper surface of the polishing plate 14. The polishing plate 14 and the polishing pad 13 form a polishing platen.
This polishing platen is rotatable by a drive mechanism (not shown).
【００１１】研磨プレート１４内には、配管１５が配設
されており、配管１５は定盤温度調節装置１６に接続さ
れている。この配管１５には水等の媒体が循環される。
定盤温度調節装置１６は、内部に図示しない冷凍機およ
びヒータを備えており、配管１５内を循環する媒体の温
度を調節するようになっている。これにより、研磨定盤
の温度が調節される。A pipe 15 is arranged in the polishing plate 14, and the pipe 15 is connected to a platen temperature adjusting device 16. A medium such as water is circulated in the pipe 15.
The platen temperature adjusting device 16 is provided with a refrigerator and a heater (not shown) inside, and adjusts the temperature of the medium circulating in the pipe 15. Thereby, the temperature of the polishing platen is adjusted.
【００１２】研磨定盤よりも上方には、研磨剤を収容す
る５０リットルの研磨剤貯蔵タンク１７が設置されてい
る。研磨剤貯蔵タンク１７内には、研磨剤を撹拌するた
めのプロペラ１８が取り付けられている。研磨剤貯蔵タ
ンク１７の側部には、研磨剤供給管１９が取り付けられ
ており、研磨剤供給管１９には、研磨剤温度調節装置２
２が取り付けられている。この研磨剤温度調節装置２２
には、図示しない冷凍機が備えられている。研磨剤２１
が研磨剤供給管１９を通過することにより、研磨剤２１
はポリッシングパッド１３上に供給される前に温度調節
される。研磨剤貯蔵タンク１７には、配管２３が巻回さ
れており、配管２３はタンク温度調節装置２４に接続さ
れている。この配管２３には水等の媒体が循環される。
タンク温度調節装置２４は、内部に図示しない冷凍機お
よびヒータを備えており、配管２３内を循環する媒体の
温度を調節するようになっている。これにより、研磨剤
貯蔵タンク１７の温度が調節される。なお、研磨剤温度
調節装置２２およびタンク温度調節装置２４は別々に制
御してもよく、一括して両者を制御してもよい。このよ
うにして本発明に係る研磨装置が構成されている。Above the polishing platen, a 50-liter polishing agent storage tank 17 for storing the polishing agent is installed. In the abrasive storage tank 17, a propeller 18 for agitating the abrasive is attached. A polishing agent supply pipe 19 is attached to a side portion of the polishing agent storage tank 17, and the polishing agent temperature adjusting device 2 is attached to the polishing agent supply pipe 19.
2 is attached. This polishing agent temperature control device 22
Is equipped with a refrigerator (not shown). Abrasive 21
As the abrasive passes through the abrasive supply pipe 19, the abrasive 21
Is temperature controlled before being applied to the polishing pad 13. A pipe 23 is wound around the abrasive storage tank 17, and the pipe 23 is connected to a tank temperature adjusting device 24. A medium such as water is circulated in the pipe 23.
The tank temperature adjusting device 24 is provided with a refrigerator and a heater (not shown) inside and adjusts the temperature of the medium circulating in the pipe 23. As a result, the temperature of the abrasive storage tank 17 is adjusted. The polishing agent temperature control device 22 and the tank temperature control device 24 may be controlled separately or may be controlled collectively. Thus, the polishing apparatus according to the present invention is constructed.
【００１３】上記構成を有する研磨装置において、実際
に被研磨体を研磨する場合、駆動機構により試料ホルダ
ー１１および研磨定盤を回転させ、試料ホルダー１１を
下方に降下させて、被研磨体１２をポリッシングパッド
１３に一定の荷重で押し付ける。この状態で研磨剤供給
管１９の吐出部２０から研磨剤２１をポリッシングパッ
ド１３上に供給することにより研磨が行われる。In the polishing apparatus having the above structure, when the object to be polished is actually polished, the sample holder 11 and the polishing platen are rotated by the drive mechanism to lower the sample holder 11 to lower the object to be polished 12. It is pressed against the polishing pad 13 with a constant load. In this state, polishing is performed by supplying the polishing agent 21 onto the polishing pad 13 from the discharge portion 20 of the polishing agent supply pipe 19.
【００１４】次に、この研磨装置を用いて半導体基板上
にＡｌの埋め込み配線を形成する方法について説明す
る。まず、シリコン基板上にＳｉＯ2 膜３０を形成す
る。次いで、このＳｉＯ2 膜３０上に直流マグネトロン
スパッタリング法により全面に厚さ５０nmの炭素膜３１
を形成した後、通常のフォトリソグラフィー工程を経て
配線用の溝（幅１μｍ、３μｍ、５μｍ、および１０μ
ｍ）を形成する。その後、直流マグネトロンスパッタリ
ング法により全面にＡｌ膜３２を形成する。このとき、
Ａｌ膜３２の膜厚は４５０nmとし、溝段差以上の高さに
なるようにした。このようにして、図２に示すような被
研磨体１２を作製した。Next, a method of forming an Al-embedded wiring on a semiconductor substrate using this polishing apparatus will be described. First, the SiO 2 film 30 is formed on the silicon substrate. Then, a carbon film 31 having a thickness of 50 nm is formed on the entire surface of the SiO 2 film 30 by a DC magnetron sputtering method.
After the formation of the trenches, the trenches for wiring (width 1 μm, 3 μm, 5 μm, and 10 μm are subjected to a normal photolithography process.
m) is formed. Then, the Al film 32 is formed on the entire surface by the DC magnetron sputtering method. At this time,
The film thickness of the Al film 32 was 450 nm so that the height was equal to or higher than the groove step. In this way, the object to be polished 12 as shown in FIG. 2 was produced.
【００１５】この被研磨体１２を試料ホルダー１１に設
置し、被研磨体１２にＣＭＰを行った。ポリッシングパ
ッド１３には、不織布上に発泡ポリウレタン層を貼付し
てなる総厚さ１．５mm、ショア硬度６６〜８８のものを
使用した。このポリッシングパッドの選定理由は、研磨
圧力３０〜６００gf／cm2 で、純水だけを用いてＡｌ、
Ｃｕ等の軟質金属のＣＭＰを行ったところ、硬度、研磨
圧力によらず、研磨表面には、深さ１００nm以上の傷は
発生しなかったことである。また、研磨剤２１には、平
均粒径３５nmのシリカ粒子を純水に１．０重量％分散さ
せたものを使用した。研磨条件は以下に示すように設定
した。なお、研磨定盤温度は、定盤温度調節装置１６に
より一定に維持した。The object to be polished 12 was placed on the sample holder 11, and the object to be polished 12 was subjected to CMP. The polishing pad 13 used had a total thickness of 1.5 mm and a Shore hardness of 66 to 88 formed by sticking a foamed polyurethane layer on a non-woven fabric. The reason for selecting this polishing pad is that the polishing pressure is 30 to 600 gf / cm 2 and only pure water is used for Al,
When CMP was performed on a soft metal such as Cu, scratches having a depth of 100 nm or more did not occur on the polished surface regardless of hardness and polishing pressure. As the abrasive 21, silica particles having an average particle diameter of 35 nm dispersed in pure water at 1.0% by weight were used. The polishing conditions were set as shown below. The polishing platen temperature was kept constant by the platen temperature controller 16.
【００１６】研磨圧力 ：３００gf／cm2 研磨定盤温度：２５℃（室温） 研磨プレート：１００ rpm 回転数 試料ホルダー：１００ rpm 回転数 上記研磨条件の下で、供給する研磨剤の温度を以下の条
件（１）、（２）のように変化させた。 ・条件（１） ２５℃（室温）の状態で研磨剤２１を研磨剤貯蔵タンク
１７に投入し、研磨剤貯蔵タンク１７をタンク温度調節
装置２４により２５℃に調節する。このとき、研磨剤貯
蔵タンク１７内の研磨剤２１をプロペラ１８により撹拌
する。研磨剤２１を研磨剤供給管１９を介してポリッシ
ングパッド１３上に供給する際に、研磨剤温度調節装置
２２により研磨剤２１の温度を１〜８０℃まで変化させ
る。 ・条件（２） ２５℃（室温）の状態で研磨剤２１を研磨剤貯蔵タンク
１７に投入し、研磨剤貯蔵タンク１７内の研磨剤２１を
プロペラ１８により撹拌しながら、研磨剤貯蔵タンク１
７をタンク温度調節装置２４により１〜８０℃まで変化
させる。研磨剤貯蔵タンク１７内の研磨剤２１の温度が
安定したところで、研磨剤２１を研磨剤供給管１９を介
してポリッシングパッド１３上に供給する。このとき、
研磨剤温度調節装置２２は取り外す。Polishing pressure: 300 gf / cm 2 Polishing plate temperature: 25 ° C. (room temperature) Polishing plate: 100 rpm rotation speed Sample holder: 100 rpm rotation speed Under the above polishing conditions, the temperature of the polishing agent to be supplied is as follows. The conditions (1) and (2) were changed. Condition (1) The abrasive 21 is put into the abrasive storage tank 17 at 25 ° C. (room temperature), and the tank storage device 17 adjusts the temperature of the abrasive storage tank 17 to 25 ° C. At this time, the abrasive 21 in the abrasive storage tank 17 is agitated by the propeller 18. When the polishing agent 21 is supplied onto the polishing pad 13 via the polishing agent supply pipe 19, the temperature of the polishing agent 21 is changed to 1 to 80 ° C. by the polishing agent temperature adjusting device 22. Condition (2) The abrasive 21 is put into the abrasive storage tank 17 at 25 ° C. (room temperature), and the abrasive 21 in the abrasive storage tank 17 is stirred by the propeller 18 while the abrasive storage tank 1 is being used.
7 is changed to 1 to 80 ° C. by the tank temperature controller 24. When the temperature of the polishing agent 21 in the polishing agent storage tank 17 is stabilized, the polishing agent 21 is supplied onto the polishing pad 13 via the polishing agent supply pipe 19. At this time,
The abrasive temperature control device 22 is removed.
【００１７】これら条件（１）および（２）で図２に示
す被研磨体を研磨したときのＡｌ配線のディッシング量
と研磨剤温度との関係を示すグラフおよびＡｌ表面の最
大表面粗さＲmax と研磨剤温度との関係を示すグラフを
それぞれ図３および図４に示す。なお、ポリッシングパ
ッド１３に供給される研磨剤の温度を直接測定すること
は難しいので、ポリッシングパッド１３表面の温度（研
磨面温度）を測定し、その温度を研磨剤温度とした。A graph showing the relationship between the dishing amount of Al wiring and the polishing agent temperature when the object to be polished shown in FIG. 2 was polished under these conditions (1) and (2), and the maximum surface roughness Rmax of the Al surface. Graphs showing the relationship with the abrasive temperature are shown in FIGS. 3 and 4, respectively. Since it is difficult to directly measure the temperature of the polishing agent supplied to the polishing pad 13, the temperature of the surface of the polishing pad 13 (polishing surface temperature) was measured and the temperature was set as the polishing agent temperature.
【００１８】図３から明らかなように、条件（１）、す
なわち研磨剤供給管１９により温度調節を行う場合で
も、条件（２）、すなわち研磨剤貯蔵タンク１７により
温度調節を行う場合でも、ディッシング量はほとんど同
じ値を示した。具体的には、研磨剤の温度が低いほど、
ディッシング量は小さくなる傾向がある。したがって、
研磨剤の温度を低くすることにより、被研磨体のディッ
シングを小さくすることができる。また、図４から明ら
かなように、研磨剤温度が低い場合には、研磨剤供給管
１９により温度調節を行う方が研磨後のＡｌ表面の最大
表面粗さＲmax は小さい。As is apparent from FIG. 3, dishing is performed regardless of the condition (1), that is, the temperature is adjusted by the abrasive supply pipe 19, and the condition (2), that is, the temperature is adjusted by the abrasive storage tank 17. The amount showed almost the same value. Specifically, the lower the temperature of the polishing agent,
The amount of dishing tends to be small. Therefore,
By lowering the temperature of the polishing agent, dishing of the object to be polished can be reduced. Further, as is clear from FIG. 4, when the polishing agent temperature is low, the maximum surface roughness Rmax of the Al surface after polishing is smaller when the temperature is controlled by the polishing agent supply pipe 19.
【００１９】一般に、研磨剤のように微粒子である研磨
粒子が溶液中に分散しているものの場合においては、粒
子が充分に小さければ、ブラウン運動や、表面に蓄えら
れた電荷に起因する粒子同士の反発等により分散が保た
れる。しかしながら、粒子が大きかったり、あるいは温
度が低くブラウン運動のためのエネルギーが充分でない
ときは、粒子は凝集、沈降する。このことを考慮する
と、研磨剤貯蔵タンク１７を冷却した場合には、撹拌を
行っていてもブラウン運動のためのエネルギーが不充分
となり、研磨粒子が凝集、沈降するため、研磨後のＡｌ
表面の最大表面粗さＲmax が大きくなる。一方、研磨剤
供給管１９を冷却した場合には、研磨剤２１は研磨剤貯
蔵タンク１７内では分散状態が保たれる。さらに、ポリ
ッシングパッド１３上に供給される直前で冷却されるの
で、研磨粒子の凝集、沈降が起ることがない。このた
め、研磨後のＡｌ表面の最大表面粗さＲmax が小さい。Generally, in the case where abrasive particles which are fine particles, such as an abrasive, are dispersed in a solution, if the particles are sufficiently small, the particles due to Brownian motion or charges accumulated on the surface can be separated from each other. Dispersion is maintained by the repulsion of. However, when the particles are large or the temperature is low and the energy for Brownian motion is not sufficient, the particles aggregate and settle. Considering this, when the polishing agent storage tank 17 is cooled, the energy for Brownian motion becomes insufficient even if stirring is performed, and the polishing particles aggregate and settle, so that the Al after polishing is polished.
The maximum surface roughness Rmax of the surface becomes large. On the other hand, when the polishing agent supply pipe 19 is cooled, the polishing agent 21 is kept dispersed in the polishing agent storage tank 17. Further, since the particles are cooled immediately before being supplied onto the polishing pad 13, the polishing particles do not aggregate or settle. Therefore, the maximum surface roughness Rmax of the Al surface after polishing is small.
【００２０】このことを確認するために次の実験を行っ
た。まず、２５℃（室温）の状態で研磨剤２１を研磨剤
貯蔵タンク１７に投入し、プロペラ１８により研磨剤２
１を撹拌する。また、研磨剤温度調節装置２２の設定温
度を５℃にする。この状態で研磨剤２１を研磨剤供給管
１９を介してポリッシングパッド１３に供給したとこ
ろ、吐出部２０での研磨剤温度は常に５±０．５℃であ
った。このときに、吐出部２０から吐出された研磨剤２
１を調べたところ、凝集、沈降はまったく起っていなか
った。次に、２５℃（室温）の状態で研磨剤２１を研磨
剤貯蔵タンク１７に投入し、プロペラ１８により研磨剤
２１を撹拌する。また、タンク温度調節装置２４の設定
温度を５℃にする。この状態で研磨剤２１を研磨剤供給
管１９を介してポリッシングパッド１３に供給したとこ
ろ、同様に吐出部２０での研磨剤温度は常に５±０．５
℃であった。しかしながら、吐出部２０から吐出された
研磨剤２１を調べたところ、１リットル当り、１ccのシ
リカのゲル状沈殿物が含まれていた。The following experiment was conducted to confirm this. First, the abrasive 21 is put into the abrasive storage tank 17 at 25 ° C. (room temperature), and the abrasive 2 is removed by the propeller 18.
Stir 1. Further, the set temperature of the polishing agent temperature control device 22 is set to 5 ° C. When the polishing agent 21 was supplied to the polishing pad 13 through the polishing agent supply pipe 19 in this state, the polishing agent temperature at the discharge portion 20 was always 5 ± 0.5 ° C. At this time, the polishing agent 2 discharged from the discharging unit 20
When No. 1 was examined, neither aggregation nor sedimentation occurred at all. Next, the abrasive 21 is put into the abrasive storage tank 17 at 25 ° C. (room temperature), and the abrasive 21 is stirred by the propeller 18. Further, the set temperature of the tank temperature adjusting device 24 is set to 5 ° C. When the polishing agent 21 was supplied to the polishing pad 13 through the polishing agent supply pipe 19 in this state, the polishing agent temperature in the discharge section 20 was always 5 ± 0.5.
It was ℃. However, when the abrasive 21 discharged from the discharge part 20 was examined, 1 liter of silica gel precipitate was contained per liter.
【００２１】上記の実験から、研磨剤貯蔵タンク１７内
で研磨剤２１を低温にすると、プロペラ１８による撹拌
だけでは、研磨粒子の凝集、沈降を完全に抑制できない
ことが分った。すなわち、研磨剤２１を低温に保持する
時間が長いほど、研磨粒子の凝集、沈降が起る。凝集し
た大きな粒径の研磨粒子は被研磨体表面への傷発生の原
因となる。したがって、低温で、しかも分散状態が安定
な研磨剤を供給するには、研磨剤貯蔵タンク１７内では
研磨剤２１を研磨粒子の凝集、沈降が起らない温度に保
ち、研磨剤供給管１９において、望ましくは研磨定盤に
供給する直前に冷却することが最も好ましい。なお、研
磨定盤に供給する直前に研磨剤２１を冷却するという意
味では、研磨剤２１を研磨粒子の凝集、沈降が起らない
温度に保ち、冷却した研磨定盤上に供給する方法も考え
られるが、研磨時には常に研磨剤が流れていることおよ
び研磨定盤上のポリッシングパッドの熱伝導率が低いこ
とを考慮すると、この方法は実用的でないと思われる。From the above experiments, it was found that when the temperature of the polishing agent 21 in the polishing agent storage tank 17 was lowered, the agglomeration and sedimentation of the polishing particles could not be completely suppressed only by stirring with the propeller 18. That is, as the time for which the abrasive 21 is kept at a low temperature is longer, the abrasive particles aggregate and settle. Aggregated abrasive particles having a large particle diameter cause scratches on the surface of the object to be polished. Therefore, in order to supply the polishing agent at a low temperature and in a stable dispersed state, the polishing agent 21 is kept in the polishing agent storage tank 17 at a temperature at which agglomeration and sedimentation of the polishing particles do not occur, and the polishing agent supply pipe 19 is used. It is most preferable to cool immediately before supplying to the polishing platen. Incidentally, in the sense that the polishing agent 21 is cooled immediately before being supplied to the polishing platen, a method of keeping the polishing agent 21 at a temperature at which agglomeration and settling of polishing particles does not occur and then supplying it to the cooled polishing platen is also considered. However, considering that the polishing agent is always flowing during polishing and the thermal conductivity of the polishing pad on the polishing platen is low, this method is not practical.
【００２２】本実施例では、被研磨体としてＡｌ膜を用
いているが、Ａｌには少量の不純物が含まれていてもよ
い。例えば、Ｓｉ１．０重量％やＣｕ１．０重量％を含
むＡｌ合金からなる膜を被研磨体として使用しても上記
効果を発揮する。また、本実施例では、Ａｌ用の研磨剤
として、平均粒径３５nmのシリカ粒子を純水に１．０重
量％分散させたものを用いているが、他の研磨剤を用い
ても上記効果を発揮する。さらに、研磨剤供給管に設置
された研磨剤温度調節装置によって、研磨剤２１をポリ
ッシングパッド１３上に供給する前に冷却することがで
きれば、図１に示すような研磨定盤温度調節装置やタン
ク温度調節装置を用いなくても上記効果を発揮する。 （実施例２）図５は図１に示す研磨装置を用いてＣＭＰ
を行う被研磨体の他の例を示す断面図である。シリコン
基板上にＳｉＯ2 膜３０を形成する。次いで、このＳｉ
Ｏ2膜３０上に通常のフォトリソグラフィー工程を経て
配線用の溝（幅１μｍ、３μｍ、５μｍ、および１０μ
ｍ）を形成する。この上に直流マグネトロンスパッタリ
ング法により全面に厚さ５０nmの窒化チタン膜３３を形
成する。その後、直流マグネトロンスパッタリング法に
より全面にＣｕ膜３４を形成する。このとき、Ｃｕ膜３
４の膜厚は４５０nmとし、溝段差以上の高さになるよう
にした。このようにして被研磨体１２を作製した。In this embodiment, the Al film is used as the object to be polished, but Al may contain a small amount of impurities. For example, even if a film made of an Al alloy containing 1.0% by weight of Si and 1.0% by weight of Cu is used as the object to be polished, the above effect is exhibited. Further, in the present embodiment, as the abrasive for Al, silica particles having an average particle diameter of 35 nm dispersed in pure water at 1.0% by weight are used. Exert. Further, if the polishing agent temperature control device installed in the polishing agent supply pipe can cool the polishing agent 21 before supplying it to the polishing pad 13, the polishing platen temperature control device and the tank as shown in FIG. The above effect is exhibited without using a temperature control device. (Embodiment 2) FIG. 5 shows CMP using the polishing apparatus shown in FIG.
It is sectional drawing which shows the other example of the to-be-polished object which performs. The SiO 2 film 30 is formed on the silicon substrate. Then this Si
Wiring grooves (width 1 μm, 3 μm, 5 μm, and 10 μm) are formed on the O 2 film 30 through a normal photolithography process.
m) is formed. A titanium nitride film 33 having a thickness of 50 nm is formed on the entire surface by DC magnetron sputtering. Then, the Cu film 34 is formed on the entire surface by the DC magnetron sputtering method. At this time, the Cu film 3
The film thickness of No. 4 was 450 nm so that the height was higher than the groove step. In this way, the object to be polished 12 was produced.
【００２３】この被研磨体１２を試料ホルダー１１に設
置し、被研磨体１２にＣＭＰを行った。ポリッシングパ
ッド１３には、不織布上に発泡ポリウレタン層を貼付し
てなる総厚さ１．５mm、ショア硬度６６〜８８のものを
使用した。また、研磨剤２１には、平均粒径３５nmのシ
リカ粒子を純水に１０重量％分散させたものを使用し
た。研磨条件は以下に示すように設定した。なお、研磨
定盤温度は、定盤温度調節装置１６により一定に維持し
た。The object to be polished 12 was placed on the sample holder 11, and the object to be polished 12 was subjected to CMP. The polishing pad 13 used had a total thickness of 1.5 mm and a Shore hardness of 66 to 88 formed by sticking a foamed polyurethane layer on a non-woven fabric. Further, as the polishing agent 21, silica particles having an average particle diameter of 35 nm dispersed in pure water in an amount of 10% by weight were used. The polishing conditions were set as shown below. The polishing platen temperature was kept constant by the platen temperature controller 16.
【００２４】研磨圧力 ：３００gf／cm2 研磨定盤温度：２５℃（室温） 研磨プレート：１００ rpm 回転数 試料ホルダー：１００ rpm 回転数 上記研磨条件の下で、供給する研磨剤の温度を実施例１
の条件（１）、（２）のように変化させた。このときの
Ｃｕ配線のディッシング量と研磨剤温度との関係を示す
グラフおよびＣｕ表面の最大表面粗さＲmax と研磨剤温
度との関係を示すグラフをそれぞれ図６および図７に示
す。Polishing pressure: 300 gf / cm 2 Polishing plate temperature: 25 ° C. (room temperature) Polishing plate: 100 rpm rotation speed Sample holder: 100 rpm rotation speed Under the above polishing conditions, the temperature of the polishing agent supplied was determined as an example. 1
The conditions (1) and (2) were changed. A graph showing the relationship between the dishing amount of the Cu wiring and the polishing agent temperature and a graph showing the relationship between the maximum surface roughness Rmax of the Cu surface and the polishing agent temperature at this time are shown in FIGS. 6 and 7, respectively.
【００２５】図６から明らかなように、条件（１）の場
合でも、条件（２）の場合でも、ディッシング量はほと
んど同じ値を示した。具体的には、研磨剤の温度が低い
ほど、ディッシング量は小さくなる傾向がある。したが
って、研磨剤の温度を低くすることにより、被研磨体の
ディッシングを小さくすることができる。また、図７か
ら明らかなように、研磨剤温度が低い場合には、研磨剤
供給管１９により温度調節を行う方が研磨後のＣｕ表面
の最大表面粗さＲmax は小さい。As is clear from FIG. 6, the dishing amount showed almost the same value under both the condition (1) and the condition (2). Specifically, the lower the temperature of the polishing agent, the smaller the dishing amount tends to be. Therefore, the dishing of the object to be polished can be reduced by lowering the temperature of the polishing agent. Further, as is clear from FIG. 7, when the polishing agent temperature is low, the maximum surface roughness Rmax of the Cu surface after polishing is smaller when the temperature is controlled by the polishing agent supply pipe 19.
【００２６】本実施例では、被研磨体としてＣｕ膜を用
いているが、Ｃｕには少量の不純物が含まれていても上
記効果を発揮する。また、本実施例では、Ｃｕ用の研磨
剤として、平均粒径３５nmのシリカ粒子を純水に１０重
量％分散させたものを用いているが、他の研磨剤を用い
ても上記効果を発揮する。In the present embodiment, the Cu film is used as the object to be polished, but the above effects are exhibited even if Cu contains a small amount of impurities. Further, in this embodiment, as the polishing agent for Cu, silica particles having an average particle size of 35 nm dispersed in pure water in an amount of 10% by weight are used. However, the above effect can be obtained by using other polishing agents. To do.
【００２７】実施例１および実施例２において、ポリッ
シングパッドには不織布上に発泡ポリウレタン層を貼付
してなるものを用いているが、硬度が同程度であれば、
例えば、ポリエステル、ポリエーテル等の不織布や、そ
れらの不織布に樹脂含浸処理を施したポリッシングパッ
ド、あるいは２種類以上の異なるパッドを張り合せてな
るポリッシングパッド等を用いても上記効果を発揮す
る。 （実施例３）図８は本発明に係る研磨装置の他の例を示
す概略図である。なお、図１に示す装置と同一部分につ
いては図１と同一の符号を付して説明は省略する。研磨
剤温度調節装置２２と研磨剤貯蔵タンク１７の間の研磨
剤供給管１９には、送液ポンプ４１が取り付けられてい
る。また、研磨剤温度調節装置２２と吐出部２０との間
の研磨剤供給管１９には、研磨剤２１を研磨剤貯蔵タン
ク１７に帰還させるための配管４０が取り付けられてい
る。研磨処理と次の研磨処理との間の研磨を行わない時
間が長い場合において、研磨剤温度調節装置２２の設定
温度が低いと、研磨剤供給管１９の研磨剤温度調節装置
２２部分に留まっている研磨剤２１が凝集、沈降してし
まう恐れがある。したがって、研磨剤２１をポリッシン
グパッド１３に供給するか、研磨剤貯蔵タンク１７に帰
還させるかを切り替えるバルブＶ1 およびＶ2 は、研磨
剤温度調節装置２２よりも下流側に設置することが好ま
しい。In Examples 1 and 2, as the polishing pad, a non-woven fabric on which a polyurethane foam layer is attached is used.
For example, the above effects can be obtained by using a non-woven fabric such as polyester or polyether, a polishing pad obtained by impregnating these non-woven fabrics with a resin, or a polishing pad obtained by laminating two or more different types of pads. (Embodiment 3) FIG. 8 is a schematic view showing another example of the polishing apparatus according to the present invention. The same parts as those in the apparatus shown in FIG. 1 are designated by the same reference numerals as those in FIG. 1 and their explanations are omitted. A liquid feed pump 41 is attached to the polishing agent supply pipe 19 between the polishing agent temperature control device 22 and the polishing agent storage tank 17. Further, a pipe 40 for returning the polishing agent 21 to the polishing agent storage tank 17 is attached to the polishing agent supply pipe 19 between the polishing agent temperature control device 22 and the discharge unit 20. When the polishing temperature between the polishing processing and the next polishing processing is not long and the set temperature of the polishing agent temperature control device 22 is low, the polishing agent supply pipe 19 stays in the polishing agent temperature control device 22 portion. There is a possibility that the abrasive 21 present may aggregate and settle. Therefore, the valves V 1 and V 2 that switch between supplying the polishing agent 21 to the polishing pad 13 and returning it to the polishing agent storage tank 17 are preferably installed downstream of the polishing agent temperature adjusting device 22.
【００２８】上記構成を有する研磨装置において、実際
に被研磨体を研磨する場合、駆動機構により試料ホルダ
ー１１および研磨定盤を回転させ、試料ホルダー１１を
下方に降下させて、被研磨体１２をポリッシングパッド
１３に一定の荷重で押し付ける。この状態で研磨剤供給
管１９の吐出部２０から研磨剤２１をポリッシングパッ
ド１３上に供給することにより研磨が行われる。また、
研磨を行わない場合においては、研磨剤２１の不均質化
や送液速度の変動による研磨特性の変動を回避するため
に、送液ポンプ４１を作動させておき、バルブＶ1 およ
びＶ2 を操作して研磨剤２１を再び研磨剤貯蔵タンク１
７に帰還させる。In the polishing apparatus having the above-mentioned structure, when the object to be polished is actually polished, the sample holder 11 and the polishing platen are rotated by the drive mechanism to lower the sample holder 11 to lower the object to be polished 12. It is pressed against the polishing pad 13 with a constant load. In this state, polishing is performed by supplying the polishing agent 21 onto the polishing pad 13 from the discharge portion 20 of the polishing agent supply pipe 19. Also,
When polishing is not performed, the liquid feed pump 41 is operated and the valves V 1 and V 2 are operated in order to avoid variations in polishing characteristics due to non-uniformity of the polishing agent 21 and variations in liquid feed rate. Then, the polishing agent 21 is added again to the polishing agent storage tank 1
Return to 7.
【００２９】この研磨装置を用いて半導体基板上にＡｌ
の埋め込み配線を形成するために図２に示す被研磨体に
ＣＭＰを行ったところ、実施例１と同様な結果が得られ
た。本実施例では、ポリッシングパッドには不織布上に
発泡ポリウレタン層を貼付してなるものを用いている
が、硬度が同程度であれば、例えば、ポリエステル、ポ
リエーテル等の不織布や、それらの不織布に樹脂含浸処
理を施したポリッシングパッド、あるいは２種類以上の
異なるパッドを張り合せてなるポリッシングパッド等を
用いても上記効果を発揮する。Using this polishing apparatus, Al on a semiconductor substrate
When the object to be polished shown in FIG. 2 was subjected to CMP in order to form the embedded wiring, the same results as in Example 1 were obtained. In this embodiment, the polishing pad is formed by laminating a foamed polyurethane layer on a non-woven fabric, but if the hardness is about the same, for example, non-woven fabrics such as polyester and polyether, or those non-woven fabrics are used. The above effect can be obtained by using a polishing pad impregnated with a resin, or a polishing pad obtained by laminating two or more kinds of different pads.
【００３０】実施例１〜３では、Ａｌ、Ｃｕを被研磨体
として研磨を行う場合について説明しているが、Ａｌ等
と同様な軟質金属であるＡｇを被研磨体として研磨を行
う場合でも本発明は有効である。また、本発明は、幅の
異なる溝が表面に混在して形成されている基体に対して
も有効である。また、本発明は、半導体基板上の絶縁膜
表面に、配線材料を埋め込むための溝が形成されたもの
や、透明（絶縁）基板上に、光（可視光、紫外光、Ｘ線
等）の吸収体材料を埋め込むための溝が形成されたもの
（例えばＣｒやＷからなる位相マスク、Ｘ線マスク）に
対しても適用することができる。その他、本発明の要旨
を逸脱しない範囲で種々変形して実施できる。Although Examples 1 to 3 describe the case of performing polishing with Al and Cu as the object to be polished, even when performing the polishing with Ag, which is a soft metal similar to Al etc., as the object to be polished. The invention is effective. The present invention is also effective for a substrate having grooves having different widths mixedly formed on the surface. Further, the present invention provides a semiconductor substrate on which a groove for embedding a wiring material is formed on the surface of the insulating film, or a transparent (insulating) substrate on which light (visible light, ultraviolet light, X-rays, etc.) The present invention can also be applied to a mask having a groove for burying an absorber material (for example, a phase mask made of Cr or W, an X-ray mask). In addition, various modifications may be made without departing from the scope of the present invention.
【００３１】[0031]
【発明の効果】以上説明した如く本発明の研磨装置は、
研磨剤供給管に取り付けられ、研磨剤の温度を調節する
研磨剤温度調節手段を備えており、研磨剤を供給直前に
低温にすることができるので、実用上問題がない程度に
配線表面に生じる傷（粗れ）およびディッシングの発生
を抑制して研磨することができる。As described above, the polishing apparatus of the present invention is
It is attached to the polishing agent supply pipe and equipped with a polishing agent temperature adjusting means for adjusting the temperature of the polishing agent. Since the polishing agent can be cooled to a low temperature immediately before it is supplied, it occurs on the wiring surface to the extent that there is no practical problem. Polishing can be performed while suppressing generation of scratches (roughness) and dishing.
【図１】本発明に係る研磨装置の一例を示す概略図。FIG. 1 is a schematic view showing an example of a polishing apparatus according to the present invention.
【図２】本発明の研磨装置を用いて研磨される被研磨体
の一例を示す断面図。FIG. 2 is a sectional view showing an example of an object to be polished that is polished by using the polishing apparatus of the present invention.
【図３】ディッシング量と研磨面温度との関係を示すグ
ラフ。FIG. 3 is a graph showing the relationship between the dishing amount and the polishing surface temperature.
【図４】最大表面粗さと研磨面温度との関係を示すグラ
フ。FIG. 4 is a graph showing the relationship between maximum surface roughness and polishing surface temperature.
【図５】本発明の研磨装置を用いて研磨される被研磨体
の他の例を示す断面図。FIG. 5 is a sectional view showing another example of an object to be polished that is polished by using the polishing apparatus of the present invention.
【図６】ディッシング量と研磨面温度との関係を示すグ
ラフ。FIG. 6 is a graph showing the relationship between the dishing amount and the polishing surface temperature.
【図７】最大表面粗さと研磨面温度との関係を示すグラ
フ。FIG. 7 is a graph showing the relationship between maximum surface roughness and polishing surface temperature.
【図８】本発明に係る研磨装置の他の例を示す概略図。FIG. 8 is a schematic view showing another example of the polishing apparatus according to the present invention.
【符号の説明】 １１…試料ホルダー、１２…被研磨体、１３…ポリッシ
ングパッド、１４…研磨プレート、１５，２３，４０…
配管、１６…定盤温度調節装置、１７…研磨剤貯蔵タン
ク、１８…プロペラ、１９…研磨剤供給管、２０…吐出
部、２１…研磨剤、２２…研磨剤温度調節装置、２４…
タンク温度調節装置、３０…ＳｉＯ2 膜、３１…炭素
膜、３２…Ａｌ膜、３３…窒化チタン膜、３４…Ｃｕ
膜、４１…送液ポンプ。[Explanation of reference numerals] 11 ... Sample holder, 12 ... Object to be polished, 13 ... Polishing pad, 14 ... Polishing plate, 15, 23, 40 ...
Piping, 16 ... Plate temperature control device, 17 ... Abrasive storage tank, 18 ... Propeller, 19 ... Abrasive supply pipe, 20 ... Discharge part, 21 ... Abrasive, 22 ... Abrasive temperature control device, 24 ...
Tank temperature control device, 30 ... SiO 2 film, 31 ... Carbon film, 32 ... Al film, 33 ... Titanium nitride film, 34 ... Cu
Membrane, 41 ... Liquid delivery pump.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡野 晴雄 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝研究開発センター内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Haruo Okano 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Incorporated Toshiba Research and Development Center
Claims (2)
供給する研磨剤供給管と、 前記被研磨体の被研磨面を前記研磨定盤に対面させるよ
うに前記被研磨体を保持する被研磨体保持具と、 前記研磨剤供給管に取り付けられており、前記研磨剤の
温度を調節する研磨剤温度調節手段と、を具備すること
を特徴とする研磨装置。1. A polishing agent storage container for storing a polishing agent, a polishing platen for polishing an object to be polished, and a polishing agent supply for supplying the polishing agent from the polishing agent storage container onto the polishing platen. A pipe, an object-to-be-polished holder that holds the object to be polished so that the surface to be polished of the object to be polished faces the polishing platen, and the abrasive agent supply pipe is attached to the object to be polished. And a polishing agent temperature adjusting means for adjusting the temperature.
の温度を前記研磨剤貯蔵容器内の研磨剤の温度よりも低
く調節する手段である請求項１記載の研磨装置。2. The polishing apparatus according to claim 1, wherein the polishing agent temperature adjusting means is a means for adjusting the temperature of the polishing agent to be lower than the temperature of the polishing agent in the polishing agent storage container.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4416094A JP3260542B2 (en) | 1994-03-15 | 1994-03-15 | Polishing equipment |
| KR1019940006222A KR0166404B1 (en) | 1993-03-26 | 1994-03-26 | Polishing method and polishing apparatus |
| DE19944410787 DE4410787A1 (en) | 1993-03-26 | 1994-03-28 | Polishing method and polishing device |
| US08/300,127 US5607718A (en) | 1993-03-26 | 1994-09-02 | Polishing method and polishing apparatus |
| US08/743,044 US5775980A (en) | 1993-03-26 | 1996-11-04 | Polishing method and polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4416094A JP3260542B2 (en) | 1994-03-15 | 1994-03-15 | Polishing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07254579A true JPH07254579A (en) | 1995-10-03 |
| JP3260542B2 JP3260542B2 (en) | 2002-02-25 |
Family
ID=12683861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4416094A Expired - Fee Related JP3260542B2 (en) | 1993-03-26 | 1994-03-15 | Polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3260542B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999011432A1 (en) * | 1997-08-29 | 1999-03-11 | Infineon Technologies Ag | Device and method for heating a liquid or semiliquid polishing agent, and device for polishing wafers |
| JP2000031100A (en) * | 1998-06-23 | 2000-01-28 | Samsung Electron Co Ltd | Slurry supply system for semiconductor cmp process |
| US6319099B1 (en) | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| JP2002305166A (en) * | 2001-04-05 | 2002-10-18 | Rodel Nitta Co | Method for preparing polishing slurry |
| JP2006516067A (en) * | 2002-11-13 | 2006-06-15 | デュポン エアー プロダクツ ナノマテリアルズ エルエルシー | Abrasive composition and polishing method therefor |
| JP2007222988A (en) * | 2006-02-23 | 2007-09-06 | Ntn Corp | Lapping method and lapping apparatus |
| JP2007222987A (en) * | 2006-02-23 | 2007-09-06 | Ntn Corp | Lapping method and lapping apparatus |
| JP2012056081A (en) * | 2011-12-20 | 2012-03-22 | Ntn Corp | Lapping method and device |
| JP2013258212A (en) * | 2012-06-11 | 2013-12-26 | Toshiba Corp | Semiconductor device manufacturing method |
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1994
- 1994-03-15 JP JP4416094A patent/JP3260542B2/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999011432A1 (en) * | 1997-08-29 | 1999-03-11 | Infineon Technologies Ag | Device and method for heating a liquid or semiliquid polishing agent, and device for polishing wafers |
| JP2000031100A (en) * | 1998-06-23 | 2000-01-28 | Samsung Electron Co Ltd | Slurry supply system for semiconductor cmp process |
| US7166018B2 (en) | 1998-11-24 | 2007-01-23 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US7249995B2 (en) | 1998-11-24 | 2007-07-31 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US6585560B2 (en) | 1998-11-24 | 2003-07-01 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US6790127B2 (en) | 1998-11-24 | 2004-09-14 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US7052377B2 (en) | 1998-11-24 | 2006-05-30 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US7331844B2 (en) | 1998-11-24 | 2008-02-19 | Matsushita Electric Industrial Co., Ltd. | Polishing method |
| US6319099B1 (en) | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| JP2002305166A (en) * | 2001-04-05 | 2002-10-18 | Rodel Nitta Co | Method for preparing polishing slurry |
| JP4695771B2 (en) * | 2001-04-05 | 2011-06-08 | ニッタ・ハース株式会社 | Manufacturing method of polishing slurry |
| JP2006516067A (en) * | 2002-11-13 | 2006-06-15 | デュポン エアー プロダクツ ナノマテリアルズ エルエルシー | Abrasive composition and polishing method therefor |
| JP4860152B2 (en) * | 2002-11-13 | 2012-01-25 | デュポン エアー プロダクツ ナノマテリアルズ エルエルシー | Abrasive composition and polishing method therefor |
| US9676966B2 (en) | 2002-11-13 | 2017-06-13 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition and process |
| JP2007222988A (en) * | 2006-02-23 | 2007-09-06 | Ntn Corp | Lapping method and lapping apparatus |
| JP2007222987A (en) * | 2006-02-23 | 2007-09-06 | Ntn Corp | Lapping method and lapping apparatus |
| JP2012056081A (en) * | 2011-12-20 | 2012-03-22 | Ntn Corp | Lapping method and device |
| JP2013258212A (en) * | 2012-06-11 | 2013-12-26 | Toshiba Corp | Semiconductor device manufacturing method |
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