JPH07254540A - Electron beam exposure device - Google Patents

Abstract

PURPOSE:To smoothly and stably perform the electrical connection and release of a chip controller inside a lens-barrel by moving a blanking aperture array chip between the installation position in which a pad pushes against the needle tip of a probe tip and the position in which the pad is taken out to the outside of a lens-barrel. CONSTITUTION:A number of probes 82 which are supported by a probe supporting ring 81 on a base 80 composed of a ring-like multilayer base board and radially disposed in a conical surface-like array, are provided. The needle part 82a at the tip of each probe 82 is correspondingly disposed in the pad 134 of a blanking aperture array chip 48. The blanking aperture array chip 48 is formed so as to be moved by a stage device between an installation position in which the pad 134 pushes against the needle part 82a of the probe 82 and the position in which the pad 134 parts from the needle part 82a. Thereby, the electrical connection and release of the blanking aperture array chip 48 can be smoothly and stably performed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blanking aperture array type electron beam exposure apparatus. Among the electron beam exposure apparatuses, the blanking aperture array type apparatus does not maintain the blanking aperture array chip because the blanking aperture array chip is electrically connected to the external control circuit at many points. The structure is difficult, and this improvement is desired.

[0002]

2. Description of the Related Art FIG. 18 shows a blanking aperture array chip (hereinafter referred to as BAA chip) 11 of a conventional blanking aperture array type electron beam exposure apparatus 10.

Reference numeral 12 is a lens barrel, 13 is an electron gun, and 14 is a wafer. The inside of the lens barrel 12 is vacuum.

A printed circuit board 15 has a large number of holes 15a into which socket pins are inserted and a wiring pattern 15b, and is mounted inside the lens barrel 12.

The printed circuit board 15 has a large number of electric wires 1.
6, electrically connected to the beam on / off signal generator 1 outside the lens barrel 12 via the hermetic seal 17.

The BAA chip 11 is adhered to the package 19 by the adhesive layer 20, and the BAA electrode 21 is provided.
Are electrically connected to the package 19 by wires 22 attached by wire bonding.

The package 19 is inserted and attached to the socket 23.

The socket 23 is inserted and attached to the printed circuit board 15.

[0009]

[PROBLEMS TO BE SOLVED BY THE INVENTION]
It may be necessary to replace the tip 11.

Here, the number of pins is considerably large, the package 19 is strongly connected to the socket 23, the socket 23 is strongly connected to the printed circuit board 15, and the package 19 or the socket 23 is connected. It is almost impossible to remove or reattach the lens barrel 10 inside.

Therefore, in order to replace the BAA chip 11, the inside of the lens barrel 12 is opened to atmospheric pressure, the printed circuit board 15 is removed, and the BAA chip 11 is allowed to be the length of the electric wire 16 together with the package 19 and the socket 23. In the range, pull it out of the lens barrel 12 and work outside the lens barrel 12 to BAA
I was exchanging chips.

Also, the BAA chip is replaced, and the lens barrel 1 is again used.
After the lens barrel 12 is housed in the lens barrel 2, the inside of the lens barrel 12 is evacuated again. In order to evacuate the inside of the lens barrel 12, it is necessary to perform evacuation for a long time.

Therefore, the work of replacing the BAA chip is very troublesome and troublesome.

Therefore, the conventional BAA type electron beam exposure apparatus has a problem that maintainability is not good.

Therefore, an object of the present invention is to provide an electron beam exposure apparatus which solves the above problems.

[0016]

According to a first aspect of the invention, a blanking aperture array chip having a plurality of pixels and electrodes is electrically connected to a control device outside the lens barrel. In the electron beam exposure apparatus used by being mounted inside, the blanking aperture array chip has a structure in which pads are arranged along the circumference, and is electrically connected to the control device inside the lens barrel. Also, it is possible to take out the probe means in which a large number of a large number of probes are radially arranged, the blanking aperture array chip, the mounting position where the pad abuts against the needle tip of the tip of the probe, and the outside of the lens barrel. It is configured to have a moving means for moving it to and from the position.

The invention of claim 2 further comprises a blanking aperture array mounting detection means provided with two probes, wherein the blanking aperture array corresponds to a corner portion and a needle portion of the two probes. It is configured to have a mounting confirmation pad pattern having two pad portions arranged in a positional relationship and a connecting portion connecting the two pad portions.

According to a third aspect of the present invention, a substrate, an opening of an arbitrary shape formed in the substrate, an electrode formed in the substrate so as to face a part of the opening, and an electrical connection between the electrode and the electrode. And a plurality of pads arranged along the periphery of the substrate.

According to a fourth aspect of the present invention, a substrate, an opening of an arbitrary shape formed in the substrate, an electrode formed in the substrate so as to face a part of the opening, and an electrical connection between the electrode and the electrode. An electron beam device using a blanking aperture array chip composed of a large number of pads arranged along the periphery of the substrate, which is connected to Of the probe are arranged radially, control means electrically connected to the probe and provided outside the lens barrel, and provided inside the lens barrel, the blanking aperture array. A moving means for moving the chip between a mounting position where the pad is pressed against the needle tip of the tip of the probe and a position where the tip can be taken out of the lens barrel; and the blanking aperture array chip described above. Was passed through the mind shape aperture electron beam is obtained by a configuration having a means for stepwise deflection.

According to a fifth aspect of the invention, the blanking aperture chip, which corresponds to the mounted blanking aperture array chip, deflects the electron beam that has passed through the arbitrarily shaped opening of the blanking aperture chip in a direction in which the shield is surely shielded. The configuration further includes means.

[0021]

According to the structure of the present invention, the blanking aperture array chip is electrically connected to and disconnected from the controller by pressing the pad against the needle tip of the probe. It works as possible by moving the needle away from the needle tip.

The two pad portions and the connecting portion of the second aspect act so as to electrically connect the two probes of the attachment detecting means when the chip is attached at a predetermined position. According to the third aspect of the present invention, the structure having the arbitrarily shaped opening and having the electrode facing the opening acts to deflect the electron beam passing through a portion of the opening facing the electrode. Therefore, a plurality of types of patterns are created based on one opening, and the patterns are switched so as to be performed in the order of nsec.

According to the structure of the present invention in which the chip having the arbitrarily shaped opening is mounted and used, the shape of the exposure pattern can be switched in a short time.

The structure including the blanking means according to the fourth aspect is used to deflect the electron beam in a direction in which it does not easily leak.

[0025]

【Example】

[First Embodiment] FIG. 1 shows a blanking aperture array type electron beam exposure apparatus 30 according to an embodiment of the first invention.

The electron beam exposure apparatus 30 includes a lens barrel 31 and
Subchamber 32 protruding laterally from lens barrel 31
And a control device 33 outside the lens barrel 31.

Inside the lens barrel 31, the electron gun 3 is provided on the top side.
4. A wafer stage 35 is provided on the bottom side.

Inside the lens barrel 31, the focusing lenses 36 to 41, the main deflector 42, and the sub deflector 4 are further provided.
3, blanking electrode device 44, round aperture 4
5, a probe device 46, a BAA stage device 47, and a blanking aperture array chip 48 are provided.

The control device 33 includes a CPU 50, a memory 51 in which exposure information is stored, a beam on / off signal generator 52 for generating a beam on / off signal, a scanning signal generator 53, and a block. Ranking control signal generator 54
Have.

In relation to the subchamber 32, rod lock valves 60, 61 and a vacuum pump 62 are provided. Here, a general operation of the electron beam exposure apparatus 30 having the above configuration will be described. The wafer 70 coated with the resist 21 is set on the stage 36.

An electron beam 71 emitted from the electron gun 34
Illuminates the BAA chip 48, passes through it, and is two-dimensionally shaped into a bundle of off-beams 72 and on-beams 73.

The off beam 72 is a beam when an off signal is applied to the electrodes of the BAA chip 48,
It bends and is blocked by the round aperture 45, and does not reach the wafer 70.

The on-beam 73 is a beam when the on-electrode is applied to the electrode of the BAA chip 48,
Go straight and go through the opening of the round aperture 45,
It is focused by lenses 39, 40, 41 and deflected by deflectors 43, 42 to illuminate and scan wafer 70.

As a result, a predetermined pattern is exposed on the resist film on the wafer 70.

Next, the essential part of the present invention will be described.

[Structure enabling replacement of BAA chip] B
The structure that makes the AA chip replaceable is the probe device 46.
And a BAA chip stage device 47.

(1) Probe device 46 (see FIGS. 2 and 3) As shown in FIGS. 2 and 3, the probe device 46 includes a base 80 made of a substantially ring-shaped multilayer substrate, and a ring-shaped base 80 on the base 80. It has a resin-made probe support ring 81 and a large number of probes 82 supported by the probe support ring 81 and arranged in a conical surface and arranged radially.

The bases of the probes 82 are fixed to the pads 83 on the base 80 by soldering. Each probe 82
Has a needle portion 82a at the tip.

The needle portion 82a at the tip of the probe 82 is B
They are arranged in an arrangement corresponding to the arrangement of pads on the AA chip.

Each pad 83 is connected to a pad 85 on the outer peripheral side of the base 80 via a wiring pattern 84 inside the base 80. An electric wire 86 is drawn out from the pad 85.

In the probe device 46, the cylindrical wall portions 87 and 88 formed so as to extend inward from the lens barrel 31 cause the portion 89 near the outer periphery of the base plate 80 to interpose vacuum seal members 90 and 91. It is sandwiched and vacuum sealed.

The electric wire 8 drawn out of the lens barrel 31
6 is connected to the signal generator 52.

Further, the probe device 46 has a pair of probes 92 and 93 for confirming that the BAA chip is properly mounted. The probes 92 and 93 are
The needle portions 92a and 93a at the tips are arranged so as to face the corner portions of the BAA chip 48.

As shown in FIG. 1, the probes 92 and 93 are electrically connected to the BAA chip attachment detection circuit 94.

The probe device 46 is provided inside the lens barrel 31 to enable electrical connection and disconnection of the BAA chip 48 to the beam on / off signal generator 52.

(2) BAA chip stage device 47
(See FIGS. 4 to 7) As shown in FIGS. 4 to 7, the BAA chip stage device 47 includes a base 100 fixed to the lens barrel 31, and a square frame 101 on the base 100. And frame 10
Two guide rods 1 extending in the X direction
02a, 102b and guide rods 102a, 102b
X stage 1 which is supported by and is movable in X ₁ and X ₂ directions
03 and the X stage 103 between the positions P ₁ and P ₂ in the X ₁ and X ₂ directions.
, The bearing member 105 incorporated in four places of the X stage 103, and the bearing member 105 are inserted, and Z ₁ , Z
A rectangular plate-shaped Z stage having four shafts 106 that are displaceable in _two directions and a shallow concave holder support 107 that is fixed to the lower end of the shaft 104 and has a holder fitted and supported on the lower surface. 108, the spring 109 for urging the shaft 104 in the Z ₁ direction, and the Z stage 108 are moved up and down between a downwardly moved position Q ₁ shown in FIG. 5 and a slightly moved up position Q ₂ shown in FIG. And a Z stage elevating mechanism 110.

As shown in FIG. 4, the X stage moving mechanism 104 is supported by the rack 111 on the X stage 103 and the frame 110, and rotates the pinion 112 meshed with the rack 111 and the pinion 112. And a motor (not shown). Z stage lifting mechanism 110
Is a rotary shaft 11 that is horizontally mounted above the X stage 103.
3a and 113b, eccentric cams 114a to 114d that are formed on a part of the rotating shafts 113a and 113b and face the tops of the four shafts 106, respectively, and the shaft 113.
a, 113b for rotating the motor (not shown).

Reference numeral 115 denotes a BAA chip holder, which has a rectangular plate shape and a shallow concave BAA chip support portion 11.
5a and also has a locking portion 115b on one end side.

The holder 115 can be inserted into and removed from the holder support 107 in the X ₁ and X ₂ directions.

The stage device 47 having the above structure is provided to move the BAA chip holder 115 between the position S _{1 at} the center of the lens barrel 31 and the position S ₂ near the subchamber 32.

(3) Insertion / Extraction Jig In FIG. 4, reference numeral 120 is an insertion / extraction jig, which has a shape having a locking arm 122 at the tip of the rod 121.

This jig 120 is provided by the operator for pulling the holder 115 carried to the position P ₂ into the chamber 32 and for mounting the holder 115 of the chamber 32 on the Z stage 108. There is.

(4) Subchamber Subchamber 32 and rod lock doors 60, 6 in FIG.
No. 1 is provided in order to put the BAA chip holder 115 into and out of the lens barrel 31 without exposing the inside of the lens barrel 31 to the atmosphere.

(5) BAA Chip As shown in FIG. 8, the BAA chip 48 has a large number of 0.1 μm square pixels (rectangular openings) 131 on a rectangular substrate 130 made of silicon. The active electrode 132 and the ground electrode 133 are included.

A large number of pads 134 are arranged along each side 130a to 130d of the substrate 130.

The electrodes 132 and 133 and the pad 134 are connected via a wiring pattern 136.

The pad 134 has a first row 135 _-1 , a second row 135 _-1 .
Row 135 _-2 , a third row 135 _-3 , and a fourth row 135 _-4, and the pads forming the adjacent rows are offset, forming a two-stage staggered arrangement. .

Each pad 134 has a rectangular shape having a dimension a of 0.2 mm along the side of the substrate 130 and a dimension b of 0.3 mm in the direction toward the center of the substrate 130. b> a
The reason is that the needle tip moves in the direction of the dimension b when the probe device 46 is connected.

The four corners 130e-13 of the substrate 130
Out of 0h, three corners 130e, 130f, 130
BAA chip mounting confirmation pad 137 _-1 ,
137 _-2 and 137 _-3 are formed.

Each pad pattern 137 _-1 (137 _-2 , 1
37 _-3 ) is two pad portions 138, 1 of 0.2 mm square
39 and a connecting portion 140 that connects the two pad portions 138 and 139.

The remaining corner 130h is the gripped portion 141, and no pad is formed.

(6) Replacement of BAA Chip As shown in FIGS. 2 and 3, the BAA chip 48 has the pad 134 in contact with the needle portion 82a of the probe 82.

The BAA chip 48 is replaced by the following procedure and operation.

The elevating mechanism 110 of the stage device 47 is operated.

As a result, the Z stage 108 moves up about 2 mm from Q ₁ to Q ₂ (see FIG. 5).

The BAA chip 48 moves upward together with the Z stage 180, and each pad 134 has a needle tip 82 of the probe 82.
leave a.

As a result, the mechanical contact of the BAA chip 48 with the probe device 46 is released, and the electrical connection with the signal generator 52 is released.

Subsequently, the X of the stage device 47 is also used.
The stage moving mechanism 104 is operated.

As a result, the X stage 103 is moved to the position P ₁
To the position P _{2 in the} X ₁ direction.

The holder 115 is moved integrally with the X stage 103 and reaches the vicinity of the load lock door 60.

The BAA chip 48 reaches the position S ₁ (see FIG. 5) where the lens barrel 31 can be taken out.

Subchamber 6 in a vacuum state
The rod lock door 60 of No. 2 is opened, the insertion / extraction jig 120 is projected from the sub-chamber 32, and rotated to lock the locking arm portion 122 to the locking portion 115b of the holder 115.
In the X ₁ direction.

As a result, the holder 115 is pulled out from the Z stage 108 and pulled out from the inside of the lens barrel 31, and as shown by the chain double-dashed line in FIG.
Housed inside.

The rod lock door 60 is closed, the rod lock door 61 is opened, and the holder 115 is attached to the sub chamber 3
Take out from 2. As a result, the BAA chip 48 is taken out from the electron beam exposure device 30. The BAA chip 48 grips the gripped portion 139,
Can be carried without damaging the pads, etc.

The holder 115 to which another BAA chip 48 A is attached is put in the sub chamber 32, the rod lock door 61 is closed, and the pump 62 is operated to bring the sub chamber 32 into a vacuum state.

The rod lock door 60 is opened, and the jig 12
By operating 0, the holder 115 is sent out into the lens barrel 31, inserted into the holder supporting portion 107, and attached to the Z stage 108.

The jig 120 is pulled into the sub chamber 32, and the rod lock door 60 is closed.

Next, the X stage moving mechanism 104 of the stage device 47 is operated.

As a result, the X stage 103 is moved to the position P.
It is moved from _two to X ₂ direction until P _1. The holder 15 is
It is moved integrally with the X stage 103.

Finally, the lifting mechanism 110 is operated.

As a result, the Z stage 108 moves to the position Q.
_It moves downward from _{2 in the} X ₂ direction by about 2 mm and reaches Q ₁ .

The holder 115 moves integrally with the Z stage 108.

The BAA chip 48A moves downward integrally with the holder 115, reaches a predetermined mounting position S ₂ (see FIG. 5), and the needles of the probe 82 corresponding to the pads 134 in a two-step zigzag arrangement in four rows. The pad 134 and the probe 82 are pressed against the portion 82a to be electrically connected.

As a result, the electrodes of all the pixels 131 of the BAA chip 48A are electrically connected to the beam on / off signal generator 52.

When the BAA chip 48A is properly mounted in the predetermined position, the three corners 130e to 130g are formed.
3, the pad portion 138 contacts the needle portion 92a of the probe 92, the pad portion 139 contacts the needle portion 93a of the probe 93, and the probes 92, 93
Electrical connection is established via the connecting portion 140.

BAA chip mounting detection circuit 94 in FIG.
Detects when the probes 92 and 93 are electrically connected to each other at all three positions.

Therefore, when the circuit 94 performs the detection operation, B
The AA chip 48A is correctly mounted without any displacement in the position and the rotating direction, and the replacement of the BAA chip is completed.

When the circuit 94 does not perform the detecting operation, for example, it is displayed that the BAA chip is not properly mounted, and the BAA chip mounting operation is performed again.

[Embodiment of the Second Invention] FIG. 9 shows an arbitrarily shaped aperture blanking aperture array (BAA) chip 150 according to the first embodiment of the second invention.

In the figure, parts corresponding to those shown in FIG. 8 are designated by the same reference numerals, and their description will be omitted.

The chip 150 corresponds to the pixel 131 in FIG.
Instead, it has an opening 151 having a substantially C-shaped pattern.

When the ON signal is applied, the electrodes 152 and 153 have electrodes 152 and 15 in the opening 151.
The electron beam passing through the portion facing 3 also passes through without being deflected, and when an OFF signal is applied, the electron beam passing through the portion facing electrodes 152 and 153 is deflected so as to be blocked by the round aperture. Therefore, according to this chip 150, the electrodes 152, 153
As shown in FIGS. 10A to 10D, four exposure patterns 155 _-1 , 155 _-2 , 155 _-3 , 155 _-4 are selectively formed on the resist layer of the wafer depending on the state of the signal. Can be formed into Therefore, the arbitrary opening BAA chip 15 of FIG.
0 has the following features as compared with the block exposure chip.

Since it is possible to obtain a plurality of patterns from one arbitrary opening, it is possible to expose a pattern of several times as many types as the number of formed arbitrary openings 151.

The time required to switch the signals to the electrodes 152 and 153 is several nsec, which is considerably longer than the several msec required to deflect the electron beam and select another aperture as in the case of block exposure. short. Therefore, the throughput of the work for forming the pattern on the wafer is high.

Compared to the BAA chip, a thinner pattern can be formed more accurately and efficiently than this.

FIG. 11 shows an arbitrarily shaped aperture blanking aperture (BAA) chip 160 according to a second embodiment of the second invention.

The opening 161 has a zigzag shape, and has power sources 162 and 163 facing the opening 161 at both ends.

Here, the electrodes 151, 152, 162, 1
Consider the direction in which the electron beam is deflected by the beam on / off signal to 63.

In the chip 150 of FIG. 9 and the BAA chip 160 of FIG. 11, the shapes of the patterns exposed on the wafer are different, and in addition, the electrodes 152, 153, 162, 163.
The direction in which the electron beam is deflected depends on the beam on / off signal applied to the electron beam.

As shown in FIG. 12, in the BAA chip 150 of FIG. 9, the electron beam is deflected in the direction of arrow 171.

As described above, the direction of deflection of the electron beam is generally different for each BAA chip.

The BAA chip is generally prepared separately for each pattern formed on one resist layer of the wafer. After the pattern is formed on the entire surface of the resist layer of the wafer, the BAA chip is prepared. Is taken out of the lens barrel and is replaced with another BAA chip corresponding to the pattern to be formed on the next resist layer while etching or the like.

Further, it is also possible to divide the area into the same chip and have the arbitrary opening 151 (161) and the pixel group together.

[Embodiment of the Third Invention] The third invention relates to an electron beam exposure apparatus using the arbitrarily shaped aperture type BA chip according to the second invention.

FIG. 13 shows an electron beam exposure apparatus 180 according to an embodiment of the present invention.

This electron beam exposure apparatus 180 has the same configuration as the electron beam exposure apparatus 30 of FIG. 1 except for a part, and in FIG. 13, the same reference numerals are given to the portions corresponding to the components shown in FIG. The description is omitted.

Since the deflection direction of the electron beam by the beam on / off signal is different for each BAA chip, the blanking electrode device 181 has the structure shown in FIG.

The blanking electrode device 181 has the first and second electrodes 182 and 183 arranged in a substantially orthogonal positional relationship.
And a third electrode 184 facing them.

The first and second electrodes 182 and 183 are electrically connected to the blanking control signal generating circuit 54.

The third electrode 184 is grounded.

According to the blanking voltage device 181 having the above structure, the direction in which the electron beam is deflected can be freely changed depending on how the voltage is applied to the first and second electrodes 182 and 183.

In FIG. 13, reference numeral 185 denotes an input device for designating the direction in which the blanking electrode device 181 deflects the electron beam.

Next, the electron beam exposure apparatus 18 having the above structure
The operation of 0 will be described.

For example, first, the BAA chip 150 shown in FIG.
An example will be described in which the first layer is exposed by using, and then the second layer is exposed by using the BAA chip 160 of FIG. 11.

The BAA chip 150 of FIG. 9 is mounted as shown in FIG.

The input device 185 is operated to input that the deflection direction is the direction shown by the arrow 170 in FIG.

From the scanning signal generator 53, as shown in FIG.
The stepwise signal a shown in (A) is output to the sub deflector 43.

A blanking signal b shown in FIG. 16B is output from the blanking control signal generating circuit 54 and applied to the electrodes 182 and 183 in FIG. 14, and the electron beam is indicated by an arrow 180 in FIG. It is deflected in the same direction as the arrow 170 as shown. As a result, the electron beam is swung in a direction further away from the central hole 45a of the round aperture 45, and the leakage of the electron beam is effectively prevented.

From the beam on / off signal generator 52,
A beam on / off signal is output, an on signal c shown in FIG.
The ON signal d shown in FIG.

As a result, the exposure is performed in the same manner as the block exposure in the order of →→→→, and the pattern 190 shown in FIG. 17A is formed. In the figure, the broken line is the connecting portion.

When the exposure of the entire first layer of the wafer is completed, the wafer is taken out and sent to the development processing step, and B
Remove the AA chip 150 to remove the BA chip 17 in FIG.
Wear 0. The replacement of the BA chip is performed in the same manner as in the case of the device shown in FIG.

The input device 185 is operated to input that the deflection direction has been changed to the direction indicated by the arrow 171 in FIG.

The scanning signal generator 53, the blanking control signal generating circuit 54, and the beam on / off signal generator 52 are operated in substantially the same manner as described above.

The electron beam is applied to the blanking electrode device 18
12, the beam is swung in the same direction as the arrow 171 as indicated by the arrow 187 in FIG. 12, and the leakage of the electron beam is effectively prevented.

As a result, the resist layer shown in FIG.
A pattern 191 is formed as shown in FIG.

The above operation is repeated.

[0127]

As described above, according to the first aspect of the present invention, it is only necessary to push the pad against the needle tip or separate the pad from the needle tip, so that the electrical connection with the controller of the chip is made. And the release can be performed smoothly and stably inside the lens barrel. Therefore, the blanking aperture array chip can be replaced by further providing a moving means.

As a result, it is possible to realize an electron beam exposure apparatus which is superior in maintainability and operability to the conventional one.

According to the second aspect of the invention, by confirming that the two probes are electrically connected, the chip is normally mounted at a predetermined position in the lens barrel which cannot be seen from the outside. You can confirm that.

According to the invention of claim 3, since a plurality of types of patterns can be exposed from one opening, a pattern having a shape several times larger than that of a conventional clock exposure chip can be formed. Can be created. Moreover, in the conventional block exposure chip, the pattern is switched by deflecting the electron beam for several msec, whereas the pattern is switched only by changing the method of applying the signal to the electrode. , Msec, which is considerably shorter than msec, and the throughput of the work for forming a pattern can be improved.

According to the invention of claim 4, the wafer can be exposed in a shorter time than the conventional block exposure method, and a more precise pattern is exposed as compared with the BAA exposure method of the pixel group. It is possible to realize an exposure apparatus that can do this.

According to the fifth aspect of the present invention, the electron beam that has passed through the arbitrary aperture can be reliably shielded regardless of the type of the mounted chip, and the leakage of the electron beam can be reliably prevented.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of a blanking aperture array type electron beam exposure apparatus according to an embodiment of the first invention.

FIG. 2 is a diagram showing a probe device in FIG.

3 is an enlarged perspective view showing one blanking of the probe device in FIG. 2. FIG.

FIG. 4 is a plan view of a BAA chip stage device.

5 is a front view of the BAA chip stage device of FIG. 4. FIG.

6 is an enlarged vertical cross-sectional view of the BAA chip stage device taken along line VI-VI in FIG.

FIG. 7 is a bottom view of the BAA chip stage device of FIG. 4;

FIG. 8 is a plan view of a BAA chip.

FIG. 9 is a view showing a BAA chip having an arbitrarily shaped opening according to the first embodiment of the second invention.

10 is a diagram showing a pattern shape obtained from one arbitrary shape opening of the chip of FIG. 9;

FIG. 11 is a diagram showing an arbitrarily shaped apertured BAA chip according to a second embodiment of the second invention.

FIG. 12 is a diagram illustrating the deflection direction of an electron beam due to a beam on / off signal.

FIG. 13 is an overall configuration diagram of a blanking aperture array type electron beam exposure apparatus according to an embodiment of the third invention.

FIG. 14 is a diagram showing a blanking electrode device in FIG.

FIG. 15 is a diagram showing an electrical connection state of the BAA chip to the probe device in FIG. 13.

16 is a diagram for explaining the operation of the apparatus of FIG.

FIG. 17 is a diagram showing an exposed pattern.

FIG. 18 is a diagram showing a part of a blanking aperture array chip of a conventional blanking aperture array type electron beam exposure apparatus.

[Explanation of symbols]

30 Blanking Aperture Array Type Electron Beam Exposure Device 31 Lens Tube 32 Sub Chamber 33 Control Device 34 Electron Gun 35 Wafer Stage 36 to 41 Focusing Lens 42 Main Deflector 43 Sub Deflector 44 Blanking Electrode Device 45 Round Aperture 46 Probe Device 47 BAA chip stage device 48 BAA chip 50 CPU 51 Memory 52 Beam on / off signal generator 53 Scanning signal generator 54 Blanking control signal generator 55 Input device 60, 61 Rod lock door 62 Vacuum pump 70 Wafer 71 Electron beam 72 Off-beam 73 On-beam 80 Substrate 81 Probe support ring 82 Probe 82a Needle part 83 Pad 84 Wiring pattern 86 Electric wire 87,88 Wall part 89 part 90,91 Vacuum Member 92, 93 probe 92a, 92b needle portion 94 BAA chip attachment detection circuit 100 base 101 frame 102a, 102b guide rod 103 X stage 104 X stage moving mechanism 105 bearing member 106 shaft 107 holder support 108 Z stage 109 spring 110 Lifting mechanism 111 Rack 112 Pinion 113a, 113b Rotating shaft 114 BAA chip holder 115a BAA chip support 115b Locking part 120 Insertion / extraction jig 121 Rod 122 Locking part 130 Substrate 130a-130d sides 130e-130h Corner 131 Pixel 132 Active Electrode 133 Ground electrode 134 Pad 135 _-1 First row 135 _-2 Second row 135 _-3 Third row 135 _-4 Fourth row 136 Wiring pattern 137 _{-1 to} 137 _-3 BAA Chip mounting confirmation pad pattern 140 Connection part 141 Gripping part 150,160 BAA chip 151 Substantially C-shaped opening 152,153,162,163 Electrode 155 _{-1 to} 155 _-4 Exposure pattern 161 Zigzag opening 170,171 Deflection Directional arrow 180 Electron beam exposure device 181 Blanking electrode device 182 First electrode 183 Second electrode 184 Third electrode 185 Input device 190, 191 pattern

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Shigeru Maruyama 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor, Hiroshi Yasuda 1015, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited

Claims (5)

[Claims] 1. An electron beam exposure apparatus in which a blanking aperture array chip having a plurality of pixels and electrodes is mounted inside a lens barrel while being electrically connected to a controller outside the lens barrel. In the above, the blanking aperture array chip has a configuration in which pads (34) are arranged along the circumference, and a large number of probes (82) electrically connected to the control device are provided inside the lens barrel. A plurality of radially arranged probe means (46)
And between the mounting position (S ₁ ) at which the pad presses the needle tip at the tip of the probe and the position (S ₁ ) at which the blanking aperture array chip can be taken out of the lens barrel. An electron beam exposure apparatus characterized in that it has a moving means (47) for moving. 2. A blanking aperture array attachment detecting means (92, 93, 94) provided with two probes, wherein the blanking aperture array is provided at a corner portion.
A mounting confirmation pad pattern (137 _-1 having two pad portions (138, 1399) arranged in a positional relationship corresponding to the needle portions of the two probes and a connecting portion (140) connecting these two pad portions. To 137 _-3 ), the electron beam exposure apparatus according to claim 1, wherein 3. A substrate (130) and openings (151, 16) of arbitrary shape formed in the substrate.
1), electrodes (152, 153, 162, 163) formed on the substrate so as to face a part of the opening, and electrically connected to the electrodes, and along the periphery of the substrate. A blanking aperture array chip, characterized by comprising a number of pads (134) arranged side by side. 4. A substrate (130) and openings (151, 16) of arbitrary shape formed in the substrate.
1), electrodes (152, 162) formed on the substrate so as to face a portion of the opening, and a large number of electrodes (152, 162) electrically connected to the electrodes and arranged along the periphery of the substrate. An electron beam device using a blanking aperture array chip (150, 160) including a pad (134), comprising a lens barrel (31) and a large number of probes (82) provided inside the lens barrel. The probe means (46) radially arranged, the control means (33) electrically connected to the probe and provided outside the lens barrel, and the control means (33) provided inside the lens barrel. A moving means for moving the ranking aperture array chip between a mounting position (S ₂ ) at which the pad contacts the tip of the probe tip and a position (S ₁ ) at which the pad can be taken out of the lens barrel. (47) and the above An electron beam exposure apparatus comprising: a means (43, 53) for stepwise deflecting an electron beam that has passed through the arbitrary-shaped aperture of the ranking aperture array chip. 5. A blanking means (44) for deflecting an electron beam, which has passed through the arbitrarily shaped opening of the blanking aperture array chip, in a direction in which shielding is surely performed, corresponding to the mounted blanking aperture array chip. 5. The electron beam exposure apparatus according to claim 4, further comprising: